CN104637446B - Image element circuit and its driving method and a kind of display device - Google Patents

Image element circuit and its driving method and a kind of display device Download PDF

Info

Publication number
CN104637446B
CN104637446B CN201510059758.7A CN201510059758A CN104637446B CN 104637446 B CN104637446 B CN 104637446B CN 201510059758 A CN201510059758 A CN 201510059758A CN 104637446 B CN104637446 B CN 104637446B
Authority
CN
China
Prior art keywords
transistor
pole
coupled
signal
scan line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510059758.7A
Other languages
Chinese (zh)
Other versions
CN104637446A (en
Inventor
林兴武
张盛东
孟雪
冷传利
王翠翠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Peking University Shenzhen Graduate School
Original Assignee
Peking University Shenzhen Graduate School
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Peking University Shenzhen Graduate School filed Critical Peking University Shenzhen Graduate School
Priority to CN201510059758.7A priority Critical patent/CN104637446B/en
Publication of CN104637446A publication Critical patent/CN104637446A/en
Application granted granted Critical
Publication of CN104637446B publication Critical patent/CN104637446B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)

Abstract

A kind of image element circuit and its driving method are provided, in initial phase, third transistor conducting initializes each electrode potential of second transistor;In programming phases, the threshold voltage and data-signal of second transistor are stored in storage capacitance, and the threshold voltage can characterize the threshold voltage of driving transistor;In glow phase, driving transistor produces driving current according to the pressure differential at storage capacitance two ends, and drives light-emitting component to light.Because second transistor is as being positioned proximate in image element circuit residing for driving transistor and grid voltage, source voltage is consistent lighting, second transistor be capable of mirror image driving transistor it is initial when threshold voltage and its use rear threshold voltage shift situation, and the threshold voltage is stored by storage capacitance in programming phases, so as to the threshold voltage of glow phase compensation for drive transistor is uneven or the problem of threshold voltage shift.Additionally provide a kind of display device.

Description

Image element circuit and its driving method and a kind of display device
Technical field
The application is related to display device field, and in particular to a kind of image element circuit and its driving method and a kind of display dress Put.
Background technology
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display is because with high brightness, height It is the advantages of luminous efficiency, wide viewing angle and low-power consumption, widely studied by people in recent years, and be applied to rapidly a new generation display work as In.The type of drive that OLED is shown can be passive waked-up (Passive Matrix OLED, PMOLED) and active matrix Two kinds of driving (Active Matrix OLED, AMOLED).Passive waked-up is although with low cost, but there is cross-talk Phenomenon can not realize high-resolution display, and passive waked-up electric current is big, reduces OLED service life.Compared to it Under, driven with active matrix mode sets the different transistor of number as current source on each pixel, it is to avoid cross-talk, Required driving current is smaller, and power consumption is relatively low, makes OLED life-span and increases, it is possible to achieve high-resolution display, meanwhile, active square The need for battle array driving is easier to meet large area and high grade grey level is shown.
Traditional AMOLED image element circuit be simple two TFT (Thin Film Transistor, TFT) structure, as shown in figure 1, this circuit is although simple in construction, but is unable to compensation for drive transistor T1 and OLED threshold value electricity Pressure drift causes the threshold voltage inhomogeneities of panel TFT devices everywhere because TFT devices are made of polycrystalline material.Work as drive When drift or inconsistent value on panel everywhere occur for dynamic transistor T1 threshold voltages, OLED threshold voltages, driving current IDS Will change, and pixel different on panel because the different drift situations of bias voltage it is also different, so will result in face The inhomogeneities that plate is shown.
Therefore, at present, in order to solve the V of TFT devicesTHThe problem of uneven or drift is brought, no matter AMOLED image element circuit adopts the technology that polysilicon (poly-Si) technology, non-crystalline silicon (a-Si) technology or oxide half Conductor technology, it is required for providing V when constituting image element circuitTHCompensation mechanism.What is proposed at present compensates in pixel Method be broadly divided into two kinds of current mode and voltage-type.The compensation precision of current mode image element circuit is higher, but needs one Long setup time, in the case of particularly there is very big parasitic capacitance on low current and data wire.This point Seriously limit application of the current mode image element circuit in large area, high resolution display.Voltage-type image element circuit is compensated Precision does not have the height of current mode image element circuit, and circuit structure or/and drive signal are typically relative complex, but actuating speed is fast. How preferably to sense uneven and property or the drift of driving transistor T1 threshold voltages and it is compensated, to reduce threshold value Display caused by voltage is uneven as urgent problem to be solved.
The content of the invention
The application provides a kind of image element circuit and its driving method and a kind of display device, with the threshold of compensation for drive transistor The inhomogeneities or threshold voltage shift of threshold voltage.
According to the application's in a first aspect, a kind of image element circuit is provided in a kind of embodiment, for being arranged in by first party To arrangement be used for provide scanning signal scan line and by second direction arrange be used for provide data-signal data wire it Between, including:Driving transistor, light-emitting component, storage capacitance, second transistor, third transistor, the 4th transistor, the 5th crystalline substance Body pipe and the 6th transistor, wherein,
The control pole of driving transistor is coupled to the control pole of second transistor, and the second pole of driving transistor is coupled to hair Second end of optical element;First pole of driving transistor is used to be coupled to the first level terminal, and the first end of light-emitting component is used for coupling It is bonded to second electrical level end;The first end of storage capacitance is coupled to the control pole of driving transistor, the second end coupling of storage capacitance To the first pole of driving transistor;First pole of second transistor is coupled to the second pole of third transistor, second transistor Second pole is coupled to the first pole of the 6th transistor;First pole of third transistor is coupled to the second pole of driving transistor, the The control pole of three transistors is used to be coupled to scan line;The control pole of 4th transistor is used to be coupled to scan line, the 4th crystal First pole of pipe is used to be coupled to data wire, and the second pole of the 4th transistor is coupled to the first pole of the 6th transistor;5th is brilliant First pole of body pipe is coupled to the first pole of second transistor, and the second pole of the 5th transistor is coupled to the control of second transistor Pole, the control pole of the 5th transistor is used to be coupled to scan line;The control pole of 6th transistor is used to be coupled to scan line, the 6th Second pole of transistor is coupled to the first pole of driving transistor.
According to second aspect, a kind of display device is provided in a kind of embodiment, including:
Image element circuit matrix, the image element circuit matrix includes the above-mentioned image element circuit for being arranged in n row m column matrix, the n It is the integer more than 0 with m;Gate driving circuit, for producing scanning pulse signal, and each row by being formed in the first direction Scan line provides scan control signal to image element circuit;Data drive circuit, the data voltage of half-tone information is represented for producing Signal, and provide data-signal to image element circuit by each data wire for being formed in a second direction;Controller, for being driven to grid Dynamic circuit and data drive circuit provide control sequential.
According to the third aspect, a kind of pixel circuit drive method, each driving of image element circuit are provided in a kind of embodiment Cycle includes initial phase, programming phases and glow phase, and driving method includes:
In initial phase, third transistor and the 5th transistor turns initialize each electrode potential of second transistor; Programming phases, the 4th transistor turns, the 4th transistor transmission data-signal;Second transistor is according to its threshold voltage and data The current potential of signal adjusts it and controls electrode potential and be stored in storage capacitance, second transistor control electrode potential include data-signal and The threshold voltage information of second transistor, the threshold voltage of second transistor can characterize the threshold voltage of driving transistor; Glow phase, driving transistor produces driving current according to the pressure differential at storage capacitance two ends, and drives light-emitting component to light.
According to the image element circuit of above-described embodiment, because the control pole of second transistor is coupled to the control of driving transistor Being positioned proximate in pole, the two residing image element circuit, second transistor is capable of the threshold voltage of mirror image driving transistor, and due to The two each suffered stress situation in end is identical, so second transistor is capable of the drift situation of mirror image drive threshold voltage.Storage electricity Appearance can store the threshold voltage, so as to the threshold voltage of compensation for drive transistor, can then alleviate because of driving crystal The problem of pipe threshold voltage is uneven or threshold voltage shift and the display device that causes show uneven.
Brief description of the drawings
Fig. 1 is image element circuit structure schematic diagram in the prior art;
Fig. 2 is a kind of image element circuit structure figure disclosed in the embodiment of the present application one;
Fig. 3 is a kind of working timing figure of the image element circuit of the embodiment of the present application one;
Fig. 4 is a kind of image element circuit structure figure disclosed in the embodiment of the present application two;
Fig. 5 is a kind of working timing figure of the image element circuit of the embodiment of the present application two;
Fig. 6 is a kind of image element circuit structure figure disclosed in the embodiment of the present application three;
Fig. 7 is a kind of working timing figure of the image element circuit of the embodiment of the present application three;
Fig. 8 is a kind of display device structure block diagram for providing in a kind of embodiment.
Embodiment
The present invention is described in further detail below by embodiment combination accompanying drawing.
Some terms are illustrated first:Transistor in the application can be the transistor of any structure, such as double Bipolar transistor (BJT) or field-effect transistor (FET).When transistor is bipolar transistor, its control pole refers to double The base stage of bipolar transistor, first extremely can be the colelctor electrode or emitter stage of bipolar transistor, and corresponding second extremely can be The emitter stage or colelctor electrode of bipolar transistor, in actual application, " emitter stage " and " colelctor electrode " can be with basis signal Flow to and exchange;When transistor is field-effect transistor, its control pole refers to the grid of field-effect transistor, and the first pole can be with Drain electrode or source electrode for field-effect transistor, corresponding second extremely can be source electrode or the drain electrode of field-effect transistor, in reality In application process, " source electrode " and " drain electrode " can be so that basis signal is flowed to and is exchanged.Transistor in display is usually a kind of field Effect transistor:Thin film transistor (TFT) (TFT).The application is done specifically so that transistor is field-effect transistor as an example below Bright, transistor can also be bipolar transistor in other embodiments.
Light-emitting component is Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED), in other realities Apply in example or other light-emitting components.The first end of light-emitting component can be negative electrode or anode, and correspondingly, then light member Second end of part is male or female.It should be understood by those skilled in the art that:Electric current should flow to negative electrode from the anode of light-emitting component, Therefore, the flow direction based on electric current, it may be determined that the anode and negative electrode of light-emitting component.
It is overlapping to refer to that two paths of signals, in the same time all in significant level state, therefore, is not overlapped as two at least in a certain phase At the time of road signal is not co-located on significant level state.
Significant level can be high level or low level, in the present embodiment, in situation about not being specifically noted Under, significant level is high level.
First level terminal and second electrical level end are the both ends of power provided that worked by image element circuit.In a kind of embodiment In, the first level terminal can be high level end VDD, second electrical level end is low level end VSSOr ground wire, in other embodiments, Can adaptively it replace.It should be noted that:For image element circuit, the first level terminal (such as high level end VDD) and Second electrical level end (such as low level end VSS) not the application image element circuit a part, in order that those skilled in the art are more preferable Ground understands the technical scheme of the application, and is specifically incorporated the first level terminal and second electrical level end is described by.
It should be noted that for convenience, being more clearly understood that the application's also for those skilled in the art are made First node A, Section Point B and the 3rd node C is introduced in technical scheme, present specification to carry out circuit structure relevant portion Mark, it is impossible to regard as the terminal additionally introduced in circuit.
Embodiment one:
Fig. 2 is refer to, is a kind of image element circuit structure figure disclosed in the present embodiment, the image element circuit is used to being arranged in by the The scan line for being used to provide scanning signal of one direction arrangement and the data for being used to provide data-signal arranged by second direction Between line, in the present embodiment, the first level terminal is low level end VSSOr ground wire, second electrical level end is high level end VDD, the picture Plain circuit includes:Driving transistor T1, light-emitting component OLED, storage capacitance Cs, second transistor T2, third transistor T3, Four transistor T4, the 5th transistor T5 and the 6th transistor T6, wherein,
Driving transistor T1 control pole is coupled to second transistor T2 control pole, as shown in Fig. 2 switching node is the One node A;Driving transistor T1 the second pole is coupled to light-emitting component OLED the second end;Light-emitting component OLED first end is used In coupled to high level end VDD, driving transistor T1 the first pole is used to be coupled to low level end VSS.In the present embodiment, send out Optical element OLED first end is anode, and the second end is negative electrode.
Storage capacitance Cs first end is coupled to driving transistor T1 control pole, and storage capacitance Cs the second end is coupled to Driving transistor T1 the first pole.
Second transistor T2 the first pole is coupled to third transistor T3 the second pole, as shown in Fig. 2 switching node is the Three node C;Second transistor T2 the second pole is coupled to the 6th transistor T6 the first pole, as shown in Fig. 2 switching node is the Two node B.
Third transistor T3 the first pole is coupled to driving transistor T1 the second pole, and third transistor T3 control pole is used In coupled to scan line.
4th transistor T4 control pole is used to be coupled to scan line, and the 4th transistor T4 the first pole is used for coupled to number According to line, the 4th transistor T4 the second pole is coupled to the 6th transistor T6 the first pole.
5th transistor T5 the first pole is coupled to second transistor T2 the first pole, the 5th transistor T5 the second pole coupling Second transistor T2 control pole is bonded to, the 5th transistor T5 control pole is used to be coupled to scan line.
6th transistor T6 control pole is used to be coupled to scan line, and the 6th transistor T6 the second pole is brilliant coupled to driving Body pipe T1 the first pole.
In the present embodiment, each transistor is preferably N-channel thin film transistor (TFT), and the significant level of each transistor turns is height Level.
In a particular embodiment, data wire is used to provide data-signal VDATA.Scan line is swept including the first scan line, second Retouch line, three scan line and the 4th scan line.First scan line, the second scan line, three scan line and the 4th scan line difference Transmit the first signal Pre, LED control signal EM, scanning signal Scan and initializing signal Ini.It refer to Fig. 2, the 5th crystal Pipe T5 control pole is used to be coupled to the first scan line, for inputting the first signal Pre;6th transistor T6 control pole is used for Coupled to the second scan line, for inputting LED control signal EM;4th transistor T4 control pole is used to sweep coupled to the 3rd Line is retouched, for inputting scanning signal Scan;Third transistor T3 control pole is used to be coupled to the 4th scan line, for inputting just Beginningization signal Ini.The signal inversion that the signal and the second scan line that first scan line is transmitted are transmitted, i.e. the first signal Pre It is anti-phase with LED control signal EM;The signal inversion that the signal and the 4th scan line that three scan line is transmitted are transmitted, that is, sweep Retouch signal Scan and initializing signal Ini is anti-phase.
In the present embodiment, three scan line transmits the arrival time lag of the significant level of signal in the first scan line institute Transmit the arrival time of the significant level of signal, i.e. initializing signal Ini significant level, scanning signal Scan significant level Arrived successively with LED control signal EM significant level.
The image element circuit driving process of the present embodiment is divided into initial phase, programming phases and glow phase, as shown in Figure 3 For the signal sequence of the present embodiment, the driving process of the present embodiment is specifically described with reference to Fig. 2 and Fig. 3.It is effectively electric in the present embodiment Put down as high level.
In initial phase:High level end VDDHigh level V is providedH, the first signal Pre and initializing signal Ini are high electricity Flat, scanning signal Scan and LED control signal EM are low level.Now, third transistor T3 and the 5th transistor T5 is in and led Logical state, the 4th transistor T4 and the 6th transistor T6 are in cut-off state.5th transistor T5 of conducting is by second transistor T2 connects into diode, connects first node A and the 3rd node C, the first node A and the 3rd node C of connection are by leading Logical third transistor T3 is by high level end VDDCharge to VH-VOLED, wherein, VOLEDFor light-emitting component OLED two ends pressure drops.Complete The initialization of each node potential, that is, complete second transistor T2 control pole, the first pole and the second pole current potential it is initial Change.
In programming phases:First signal Pre continues to high level, and LED control signal EM continues to low level, swept Retouch signal Scan and be changed into high level, initializing signal Ini is changed into low level.Now, third transistor T3 and the 6th transistor T6 In cut-off state, the 4th transistor T4 and the 5th transistor T5 are in the conduction state.Second transistor T2 passes through the 5th crystal Pipe T5 connects into diode;Data-signal VDATASection Point B is written to by the 4th transistor T4 of conducting so that the Two node B voltage is changed into VDATA, at the same time, the second transistor T2 of diode type of attachment is still in the conduction state, its The current potential of second transistor T2 control poles (grid) is adjusted according to the threshold voltage of itself and Section Point B current potential (i.e. First node A current potential), in the present embodiment, second transistor T2 control poles (grid) are adjusted by being discharged to data wire First node A current potential, i.e., discharged from the second transistor T2 and the 4th transistor T4 of conducting, first node A current potential Slowly reduce, until the current potential of the node is reduced to VDATA+VTH2When, second transistor T2 can enter cut-off state, now, the One node A current potential maintains VDATA+VTH2, wherein VTH2For second transistor T2 threshold voltage.After programming phases terminate, the Two-transistor T2 threshold voltage information and data-signal VDATAIt is stored in electric capacity CSIn.It should be noted that in programming rank At the end of section, the 3rd node C current potential is roughly the same with first node A current potential.
In glow phase:First signal Pre and scanning signal Scan are changed into low level, initializing signal Ini and luminous control Signal EM processed is changed into high level.Now, the 4th transistor T4 and the 5th transistor T5 are placed in cut-off state, third transistor T3 Conducting state is placed in the 6th transistor T6, Section Point B is coupled to low level end V by the 6th transistor T6 of conductingSS, Driving transistor T1 the first pole and Section Point B current potential are set to zero, and the electric current for flowing through light-emitting component OLED is:
Wherein, IDSTo flow through light-emitting component OLED electric current, VGS_T1For between driving transistor T1 control poles and the first pole Potential difference, VTH1And VTH2Driving transistor T1 and second transistor T2 threshold voltage, μ are represented respectivelyn、Cox, W, L be respectively Driving transistor T1 effective mobility, unit area gate capacitance, channel width and channel length.Due to driving transistor T1 and Second transistor T2 closes on the position in image element circuit, also, the voltage difference between grid and source electrode is one when luminous Sample, it is preferable that additionally use identical technique, it is therefore contemplated that both threshold voltages are equal, i.e. VTH2=VTH1, Then, formula (1-1) can abbreviation be:
Formula (1-2) shows, flows through light-emitting component OLED electric current and driving transistor T1 threshold voltage VTHIt is unrelated, because Light-emitting component OLED is positioned over driving transistor T1 the second pole (for example draining) and high level end VDDBetween, so flowing through luminous Element OLED electric current and light-emitting component OLED threshold voltage are also unrelated, so as to compensation well because threshold voltage drift Move the display inhomogeneities caused.
The image element circuit of the present embodiment extracts threshold voltage using mirror image pipe (second transistor T2), on the one hand passes through design Image element circuit structure makes mirror image pipe be under identical bias condition, so as to more accurately realize the equivalent replacement of threshold voltage;Separately On the one hand there is multiple transistor, influence driving on the luminous branch road for avoiding driving transistor T1 and light-emitting component OLED compositions Ability;Another further aspect, light-emitting component OLED is positioned over close to high level end VDD, required data voltage is smaller.
In addition, storage capacitance C in image element circuit in the present embodimentSOne end be connected to driving transistor T1 control Pole, the other end may be coupled to low level end VSS, can be connected to high level end VDD, light-emitting component OLED can be positioned over drive The drain terminal of dynamic transistor, can also be positioned over source, and driving process is also identical with the driving process of the present embodiment, no longer goes to live in the household of one's in-laws on getting married herein State.
Embodiment two:
Unlike the embodiments above, in image element circuit disclosed in the present embodiment, each transistor is P-channel thin film transistor (TFT), The significant level of each transistor turns is low level.Fig. 4 is refer to, is a kind of image element circuit structure figure disclosed in the present embodiment.
Driving transistor T1 control pole is coupled to second transistor T2 control pole, and switching node is first node A;Drive Dynamic transistor T1 the second pole is coupled to light-emitting component OLED the second end;Light-emitting component OLED first end is used for coupled to low Level terminal VSS, driving transistor T1 the first pole is used to be coupled to high level end VDD.In the present embodiment, light-emitting component OLED First end be negative electrode, the second end be anode.
Storage capacitance Cs first end is coupled to driving transistor T1 control pole, and storage capacitance Cs the second end is coupled to Driving transistor T1 the first pole.
Second transistor T2 the first pole is coupled to third transistor T3 the second pole, and switching node is the 3rd node C;The Two-transistor T2 the second pole is coupled to the 6th transistor T6 the first pole, and switching node is Section Point B.
Third transistor T3 the first pole is coupled to driving transistor T1 the second pole, and third transistor T3 control pole is used In coupled to scan line.
4th transistor T4 control pole is used to be coupled to scan line, and the 4th transistor T4 the first pole is used for coupled to number According to line, the 4th transistor T4 the second pole is coupled to the 6th transistor T6 the first pole.
5th transistor T5 the first pole is coupled to second transistor T2 the first pole, the 5th transistor T5 the second pole coupling Second transistor T2 control pole is bonded to, the 5th transistor T5 control pole is used to be coupled to scan line.
6th transistor T6 control pole is used to be coupled to scan line, and the 6th transistor T6 the second pole is brilliant coupled to driving Body pipe T1 the first pole.
In the present embodiment, the first level terminal is high level end VDD, second electrical level end is low level end VSS.Image element circuit Driving process is divided into initial phase, programming phases and glow phase, refer to Fig. 5, is the signal sequence of the present embodiment, with reference to Fig. 4 and Fig. 5 specifically describe the driving process of the present embodiment.In the present embodiment, significant level is low level.
In initial phase:First signal Pre and initializing signal Ini is low level, scanning signal Scan and luminous control Signal EM processed is high level.Now, third transistor T3 and the 5th transistor T5 are in the conduction state, the 4th transistor T4 and Six transistor T6 are in cut-off state.Second transistor T2 is connected into diode by the 5th transistor T5 of conducting, is connected First node A and the 3rd node C, the first node A and the 3rd node C of connection are discharged to by the third transistor T3 of conducting VOLED, wherein, VOLEDFor light-emitting component OLED two ends pressure drops.The initialization of each node potential is completed, that is, completes second transistor The initialization of the current potential of T2 control pole, the first pole and the second pole.
In programming phases:First signal Pre continues to low level, and LED control signal EM continues to high level, swept Retouch signal Scan and be changed into low level, initializing signal Ini is changed into high level.Now, third transistor T3 and the 6th transistor T6 In cut-off state, the 4th transistor T4 and the 5th transistor T5 are in the conduction state.Second transistor T2 passes through the 5th crystal Pipe T5 connects into diode;Data-signal VDATASection Point B is written to by the 4th transistor T4 of conducting so that the Two node B voltage is changed into VDATA, at the same time, the second transistor T2 of diode type of attachment is still in the conduction state, its The current potential (i.e. first node A current potential) of second transistor T2 control poles (grid) is adjusted according to Section Point B current potential, In the present embodiment, the data-signal that second transistor T2 control poles (grid) are provided by the threshold voltage and data wire of itself VDATACharge with adjusting first node A current potential, first node A current potential is slowly raised, until the current potential of the node is increased to VDATA+VTH2When, second transistor T2 can enter cut-off state, and now, first node A current potential maintains VDATA+VTH2, wherein VTH2For second transistor T2 threshold voltage.After programming phases terminate, second transistor T2 threshold voltage information sum it is believed that Number VDATAIt is stored in electric capacity CSIn.It should be noted that at the end of programming phases, the 3rd node C current potential and first segment Point A current potential is roughly the same.
In glow phase:First signal Pre and scanning signal Scan are changed into high level, initializing signal Ini and luminous control Signal EM processed is changed into low level.Now, the 4th transistor T4 and the 5th transistor T5 are placed in cut-off state, third transistor T3 Conducting state is placed in the 6th transistor T6, Section Point B is coupled to high level end V by the 6th transistor T6 of conductingDD, Driving transistor T1 the first pole and Section Point B current potential are set to high level VH, the electric current for flowing through light-emitting component OLED is:
Wherein, IDSTo flow through light-emitting component OLED electric current, VGS_T1For between driving transistor T1 control poles and the first pole Potential difference, VTH1And VTH2Driving transistor T1 and second transistor T2 threshold voltage, μ are represented respectivelyn、Cox, W, L be respectively Driving transistor T1 effective mobility, unit area gate capacitance, channel width and channel length.Due to driving transistor T1 and Second transistor T2 closes on the position in image element circuit, also, the voltage difference between grid and source electrode is one when luminous Sample, it is preferable that additionally use identical technique, it is therefore contemplated that both threshold voltages are equal, i.e. VTH2=VTH1, Then, formula (2-1) can abbreviation be:
Formula (2-2) shows, flows through light-emitting component OLED electric current and driving transistor T1 threshold voltage VTHIt is unrelated, because Light-emitting component OLED is positioned over driving transistor T1 the second pole and low level end VSSBetween, so flowing through light-emitting component OLED's Electric current and light-emitting component OLED threshold voltage are also unrelated, so as to compensation well because of showing that threshold voltage shift is caused Show inhomogeneities.
Embodiment three:
Fig. 6 is refer to, is a kind of image element circuit structure figure disclosed in the present embodiment, is with the difference of embodiment two, In the present embodiment image element circuit, driving transistor T1 and second transistor T2 are P-channel thin film transistor (TFT), third transistor T3, 4th transistor T4, the 5th transistor T5 and the 6th transistor T6 are N-channel thin film transistor (TFT).Driving transistor T1 and second The significant level of transistor T2 conductings is low level;Third transistor T3, the 4th transistor T4, the 5th transistor T5 and the 6th are brilliant The significant level of body pipe T6 conductings is high level.
Driving transistor T1 control pole is coupled to second transistor T2 control pole, and switching node is first node A;Drive Dynamic transistor T1 the second pole is coupled to light-emitting component OLED the second end;Light-emitting component OLED first end is paramount for coupling Level terminal VDD, driving transistor T1 the first pole is used to be coupled to low level end VSS.In the present embodiment, light-emitting component OLED First end be anode, the second end be negative electrode.
Storage capacitance Cs first end is coupled to driving transistor T1 control pole, and storage capacitance Cs the second end is coupled to Driving transistor T1 the first pole.
Second transistor T2 the first pole is coupled to third transistor T3 the second pole, and switching node is the 3rd node C;The Two-transistor T2 the second pole is coupled to the 6th transistor T6 the first pole, and switching node is Section Point B.
Third transistor T3 the first pole is coupled to driving transistor T1 the second pole, and third transistor T3 control pole is used In coupled to scan line.
4th transistor T4 control pole is used to be coupled to scan line, and the 4th transistor T4 the first pole is used for coupled to number According to line, the 4th transistor T4 the second pole is coupled to the 6th transistor T6 the first pole.
5th transistor T5 the first pole is coupled to second transistor T2 the first pole, the 5th transistor T5 the second pole coupling Second transistor T2 control pole is bonded to, the 5th transistor T5 control pole is used to be coupled to scan line.
6th transistor T6 control pole is used to be coupled to scan line, and the 6th transistor T6 the second pole is brilliant coupled to driving Body pipe T1 the first pole.
In the present embodiment, second electrical level end is high level end VDD, the first level terminal is low level end VSS
Image element circuit driving process is divided into initial phase, programming phases and glow phase, refer to Fig. 7, is this implementation The signal sequence of example, the driving process and embodiment two of the image element circuit is similar, is a difference in that third transistor T3, the 4th crystalline substance The significant level that body pipe T4, the 5th transistor T5 and the 6th transistor T6 are turned on is high level.
In initial phase:First signal Pre and initializing signal Ini is high level, scanning signal Scan and luminous control Signal EM processed is low level.Now, third transistor T3 and the 5th transistor T5 are in the conduction state, the 4th transistor T4 and Six transistor T6 are in cut-off state.Second transistor T2 is connected into diode by the 5th transistor T5 of conducting, is connected First node A and the 3rd node C, the first node A and the 3rd node C of connection are discharged to by the third transistor T3 of conducting VOLED, wherein, VOLEDFor light-emitting component OLED two ends pressure drops.The initialization of each node potential is completed, that is, completes second transistor The initialization of the current potential of T2 control pole, the first pole and the second pole.
In programming phases:First signal Pre continues to high level, and LED control signal EM continues to low level, swept Retouch signal Scan and be changed into high level, initializing signal Ini is changed into low level.Now, third transistor T3 and the 6th transistor T6 In cut-off state, the 4th transistor T4 and the 5th transistor T5 are in the conduction state.Second transistor T2 passes through the 5th crystal Pipe T5 connects into diode;Data-signal VDATASection Point B is written to by the 4th transistor T4 of conducting so that the Two node B voltage is changed into VDATA, at the same time, the second transistor T2 of diode type of attachment is still in the conduction state, its The current potential (i.e. first node A current potential) of second transistor T2 control poles (grid) is adjusted according to Section Point B current potential, In the present embodiment, the data-signal that second transistor T2 control poles (grid) are provided by the threshold voltage and data wire of itself VDATACharge with adjusting first node A current potential, first node A current potential is slowly raised, until the current potential of the node is increased to VDATA+VTH2When, second transistor T2 can enter cut-off state, and now, first node A current potential maintains VDATA+VTH2, wherein VTH2For second transistor T2 threshold voltage.After programming phases terminate, second transistor T2 threshold voltage information sum it is believed that Number VDATAIt is stored in electric capacity CSIn.It should be noted that at the end of programming phases, the 3rd node C current potential and first segment Point A current potential is roughly the same.
In glow phase:First signal Pre and scanning signal Scan are changed into low level, initializing signal Ini and luminous control Signal EM processed is changed into high level.Now, the 4th transistor T4 and the 5th transistor T5 are placed in cut-off state, third transistor T3 Conducting state is placed in the 6th transistor T6, Section Point B is coupled to high level end V by the 6th transistor T6 of conductingDD, Driving transistor T1 the first pole and Section Point B current potential are set to high level VH, the electric current for flowing through light-emitting component OLED is:
Wherein, IDSTo flow through light-emitting component OLED electric current, VGS_T1For between driving transistor T1 control poles and the first pole Potential difference, VTH1And VTH2Driving transistor T1 and second transistor T2 threshold voltage, μ are represented respectivelyn、Cox, W, L be respectively Driving transistor T1 effective mobility, unit area gate capacitance, channel width and channel length.Due to driving transistor T1 and Second transistor T2 closes on the position in image element circuit, also, the voltage difference between grid and source electrode is one when luminous Sample, it is preferable that additionally use identical technique, it is therefore contemplated that both threshold voltages are equal, i.e. VTH2=VTH1, Then, formula (3-1) can abbreviation be:
Formula (3-2) shows, flows through light-emitting component OLED electric current and driving transistor T1 threshold voltage VTHIt is unrelated, because Light-emitting component OLED is positioned over driving transistor T1 the second pole and low level end VSSBetween, so flowing through light-emitting component OLED's Electric current and light-emitting component OLED threshold voltage are also unrelated, so as to compensation well because of showing that threshold voltage shift is caused Show inhomogeneities.
Example IV:
The present embodiment also discloses a kind of display device, refer to Fig. 8, is the also disclosed display device structure of the present embodiment Schematic diagram, the display device includes:
Display panel 100, display panel 100 includes being arranged in the image element circuit that above-described embodiment of n row m column matrix is provided Pixel [1] [1] ... Pixel [n] [m], wherein, n and m are the integer more than 0, and Pixel [n] [m] characterizes the picture of line n m row Plain circuit;The multi-strip scanning line Gate [1] ... Gate [n] for the first direction (such as horizontal) being connected with each pixel, wherein, Gate [n] represents the corresponding scan line of line n image element circuit, for providing scan control letter to offer to one's own profession image element circuit Number, such as scanning signal Scan, LED control signal EM, initializing signal Ini and the first signal Pre;With second direction (for example A plurality of data lines Data [1] ... Data [m] longitudinally), wherein, Data [m] represents the corresponding data of m row image element circuits Line, the data-signal V for providing each image element circuitDATA.Display panel can be liquid crystal display panel, organic light emitting display face Plate, electronic paper display panel etc., and corresponding display device can be liquid crystal display, OLED, Electronic Paper show Show device etc..
Gate driving circuit 200, for producing scanning pulse signal, and each horizontal scanning line by being formed in the first direction Gate [1] ... Gate [n] provide scan control signal to image element circuit.Gate driving circuit 200 can be by welding with showing Show that panel 100 is connected or is integrated in display panel 100.
Data drive circuit 300, it is right with it in display panel 100 that the signal output part of data drive circuit 300 is coupled to On the data wire Data [1] ... Data [m] answered, the data voltage signal V that data drive circuit 300 is producedDATAPass through data Line Data [1] ... Data [m] are transferred in corresponding pixel cell to realize gradation of image.Data drive circuit 300 can be with It is connected or is integrated in display panel 100 with display panel 100 by welding.
Controller 400, controller 400 is used to provide control sequential to gate driving circuit and data drive circuit.
It should be noted that in some embodiments, the first signal Pre and LED control signal EM and scanning signal Scan and initializing signal Ini are respectively two groups of inversion signals, therefore, it can the same signal output by gate driving circuit End provides the two paths of signals in one group, another road signal in the group is carried out anti-phase.
It should be noted that in a particular embodiment, although need to maintain and initial in glow phase initializing signal Ini Change stage same level (such as high level), programming phases beginning with the end of, saltus step occurs for initializing signal Ini, But, at glow phase initial stage, initializing signal Ini level (high or low) on the luminous influence of image element circuit less, also, The initialization time of image element circuit is very short, and initializing signal Ini has similar waveform with LED control signal EM level. Therefore, in some embodiments, initializing signal Ini and LED control signal EM can also (such as grid drives by same signal source The signal output part of dynamic circuit) provide, now need to increase delay link, for example, by the signal output part of gate driving circuit The signal of output is used to provide LED control signal EM, and increases the output signal appropriate delay link simultaneously, and will prolong The signal lagged is used to provide initializing signal Ini.
It should be noted that in some embodiments, initializing signal Ini is ahead of scanning signal Scan, and the two-way The significant level of signal is not overlapped, therefore, and the initializing signal Ini of one's own profession image element circuit believes with the scanning of lastrow image element circuit Number Scan is provided by same signal source, so as to save signal wire.
Above content is to combine specific embodiment further description made for the present invention, it is impossible to assert this hair Bright specific implementation is confined to these explanations.For general technical staff of the technical field of the invention, do not taking off On the premise of from present inventive concept, some simple deduction or replace can also be made.

Claims (8)

1. a kind of image element circuit, the scan line of scanning signal is provided and by second by being used for of arranging of first direction for being arranged in Between the data wire for providing data-signal of direction arrangement, it is characterised in that the image element circuit includes:Drive crystal Pipe, light-emitting component, storage capacitance, second transistor, third transistor, the 4th transistor, the 5th transistor and the 6th transistor;
The control pole of driving transistor is coupled to the control pole of second transistor, and the second pole of driving transistor is coupled to luminous member Second end of part;
First pole of driving transistor is used to be coupled to the first level terminal, and the first end of light-emitting component is used to be coupled to second electrical level End;
The first end of storage capacitance is coupled to the control pole of driving transistor, and the second end of storage capacitance is coupled to driving transistor The first pole;
First pole of second transistor is coupled to the second pole of third transistor, and the second pole of second transistor is brilliant coupled to the 6th First pole of body pipe;
First pole of third transistor is coupled to the second pole of driving transistor, and the control pole of third transistor, which is used to be coupled to, sweeps Retouch line;
The control pole of 4th transistor is used to be coupled to scan line, and the first pole of the 4th transistor is used to be coupled to data wire, the Second pole of four transistors is coupled to the first pole of the 6th transistor;
First pole of the 5th transistor is coupled to the first pole of second transistor, and the second pole of the 5th transistor is brilliant coupled to second The control pole of body pipe, the control pole of the 5th transistor is used to be coupled to scan line;
The control pole of 6th transistor is used to being coupled to scan line, the second pole of the 6th transistor coupled to driving transistor the One pole;
The scan line includes the first scan line, the second scan line, three scan line and the 4th scan line;
The control pole of 5th transistor is used to be coupled to the first scan line;
The control pole of 6th transistor is used to be coupled to the second scan line;
The control pole of 4th transistor is used to be coupled to three scan line;
The control pole of third transistor is used to be coupled to the 4th scan line.
2. image element circuit as claimed in claim 1, it is characterised in that
The signal inversion that the signal and the second scan line that first scan line is transmitted are transmitted;
The signal inversion that the signal and the 4th scan line that three scan line is transmitted are transmitted;
The arrival time lag that three scan line transmits the significant level of signal transmits the effective of signal in the first scan line The arrival time of level.
3. image element circuit as claimed in claim 1, it is characterised in that
In initial phase, the 4th transistor and the 6th transistor are respectively by each scanning line traffic control in cut-off state;3rd is brilliant Body pipe and the 5th transistor respond the significant level conducting that respective scan line is provided respectively, initialize the control of second transistor The current potential of pole, the first pole and the second pole;
In programming phases, the 4th transistor and the 5th transistor respond the significant level conducting that respective scan line is provided respectively, the Three transistors and the 6th transistor are respectively by each scanning line traffic control in cut-off state;Current potential of the second transistor based on data wire The current potential of its control pole is adjusted, and the current potential of second transistor control pole is stored in storage capacitance, second transistor control pole Current potential can characterize the data-signal that the threshold voltage and data wire of driving transistor are transmitted;
In glow phase, the 4th transistor and the 5th transistor are respectively by each scanning line traffic control in cut-off state;3rd crystal Pipe and the 6th transistor respond the significant level conducting of its scan line offer, and driving transistor is according to the pressure difference at storage capacitance two ends Driving produces driving current, and drives light-emitting component to light.
4. the image element circuit as described in claim 1-3 any one, it is characterised in that each transistor is thin film transistor (TFT).
5. image element circuit as claimed in claim 4, it is characterised in that the light-emitting component is organic illuminating element.
6. image element circuit as claimed in claim 5, it is characterised in that
Driving transistor, second transistor, third transistor, the 4th transistor, the 5th transistor and the 6th transistor are N-channel Thin film transistor (TFT), the significant level of each transistor turns is high level;First level terminal is low level end or ground wire, second electrical level Hold as high level end;The first end of light-emitting component is anode, and the second end of light-emitting component is negative electrode;Or,
Driving transistor, second transistor, third transistor, the 4th transistor, the 5th transistor and the 6th transistor are P-channel Thin film transistor (TFT), the significant level of each transistor turns is low level;First level terminal is high level end, and second electrical level end is low Level terminal or ground wire;The first end of light-emitting component is negative electrode, and the second end of light-emitting component is anode;Or,
Driving transistor and second transistor are P-channel thin film transistor (TFT), and the significant level of conducting is low level;3rd crystal Pipe, the 4th transistor, the 5th transistor and the 6th transistor are N-channel thin film transistor (TFT), and the significant level of conducting is high level; First level terminal is high level end, and second electrical level end is low level end or ground wire;The first end of light-emitting component is negative electrode, and light member Second end of part is anode.
7. a kind of display device, it is characterised in that including:
Image element circuit matrix, the image element circuit matrix include be arranged in n row m column matrix such as claim 1-5 any one Described image element circuit, the n and m are the integer more than 0;
Gate driving circuit, for producing scanning pulse signal, and by each horizontal scanning line for being formed in the first direction to pixel Circuit provides scan control signal;
Data drive circuit, the data voltage signal of half-tone information is represented for producing, and each by what is formed in a second direction Data wire provides data-signal to image element circuit;
Controller, for providing control sequential to gate driving circuit and data drive circuit.
8. a kind of be used for the pixel circuit drive method of the image element circuit as any one of claim 1 to 6, its feature exists In each drive cycle of the image element circuit includes initial phase, programming phases and glow phase, the driving method bag Include:
In the initial phase, third transistor and the 5th transistor turns initialize each electrode potential of second transistor;
In the programming phases, the 4th transistor turns, the 4th transistor transmission data-signal;Second transistor is according to its threshold value The current potential of voltage and data-signal adjusts it and controls electrode potential and be stored in storage capacitance, and second transistor control electrode potential includes The threshold voltage information of data-signal and second transistor, the threshold voltage of second transistor can characterize the threshold of driving transistor Threshold voltage;
In the glow phase, driving transistor produces driving current according to the pressure differential at storage capacitance two ends, and drives hair Optical element lights.
CN201510059758.7A 2015-02-03 2015-02-03 Image element circuit and its driving method and a kind of display device Active CN104637446B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510059758.7A CN104637446B (en) 2015-02-03 2015-02-03 Image element circuit and its driving method and a kind of display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510059758.7A CN104637446B (en) 2015-02-03 2015-02-03 Image element circuit and its driving method and a kind of display device

Publications (2)

Publication Number Publication Date
CN104637446A CN104637446A (en) 2015-05-20
CN104637446B true CN104637446B (en) 2017-10-24

Family

ID=53216124

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510059758.7A Active CN104637446B (en) 2015-02-03 2015-02-03 Image element circuit and its driving method and a kind of display device

Country Status (1)

Country Link
CN (1) CN104637446B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106297667B (en) 2016-09-26 2017-11-07 京东方科技集团股份有限公司 Image element circuit and its driving method, array base palte and display device
CN107886897B (en) * 2017-11-29 2020-06-19 武汉天马微电子有限公司 Pixel circuit and display device
CN108806607B (en) * 2018-04-26 2020-04-28 北京大学深圳研究生院 Pixel device and display apparatus
CN109767724A (en) 2019-03-11 2019-05-17 合肥京东方显示技术有限公司 Pixel circuit, display panel, display device and image element driving method
CN110926508B (en) * 2019-11-28 2021-11-19 北京大学深圳研究生院 Active driving type photoelectric sensor, front end circuit and driving method
CN111028767B (en) * 2019-12-06 2021-03-16 深圳市华星光电半导体显示技术有限公司 Pixel circuit and driving method
CN110930944B (en) * 2019-12-13 2021-04-13 云谷(固安)科技有限公司 Display panel driving method and display device
CN115244609A (en) * 2020-11-30 2022-10-25 京东方科技集团股份有限公司 Pixel circuit, driving method thereof and display device
CN112837654A (en) * 2021-03-22 2021-05-25 上海天马有机发光显示技术有限公司 Pixel circuit, driving method thereof, display panel and display device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100370286B1 (en) * 2000-12-29 2003-01-29 삼성에스디아이 주식회사 circuit of electroluminescent display pixel for voltage driving
JP2004191752A (en) * 2002-12-12 2004-07-08 Seiko Epson Corp Electrooptical device, driving method for electrooptical device, and electronic equipment
KR100497247B1 (en) * 2003-04-01 2005-06-23 삼성에스디아이 주식회사 Light emitting display device and display panel and driving method thereof
KR100560468B1 (en) * 2003-09-16 2006-03-13 삼성에스디아이 주식회사 Image display and display panel thereof
TWI272570B (en) * 2005-12-08 2007-02-01 Chi Mei El Corp Organic light emitting display and pixel with voltage compensation technique thereof
CN102270425B (en) * 2010-06-01 2013-07-03 北京大学深圳研究生院 Pixel circuit and display device
CN102280085B (en) * 2010-06-10 2013-09-11 元太科技工业股份有限公司 Pixel drive circuit and method and light-emitting display device
CN102290027B (en) * 2010-06-21 2013-10-30 北京大学深圳研究生院 Pixel circuit and display device
CN102915703B (en) * 2012-10-30 2014-12-17 京东方科技集团股份有限公司 Pixel driving circuit and driving method thereof

Also Published As

Publication number Publication date
CN104637446A (en) 2015-05-20

Similar Documents

Publication Publication Date Title
CN104637446B (en) Image element circuit and its driving method and a kind of display device
CN104715723B (en) Display device and its image element circuit and driving method
CN104867442B (en) A kind of image element circuit and display device
CN104575378B (en) Image element circuit, display device and display drive method
CN104821150B (en) Image element circuit and its driving method and display device
CN104715724B (en) Pixel circuit, drive method thereof and display device
CN103440840B (en) A kind of display device and image element circuit thereof
CN107170408B (en) Pixel circuit, driving method, organic electroluminescent display panel and display device
CN105096819B (en) A kind of display device and its image element circuit
CN103700342B (en) OLED pixel circuit and driving method, display device
CN104465715B (en) Image element circuit, driving method, display panel and display device
CN105096817B (en) Image element circuit and its driving method and a kind of display device
CN104850270B (en) Driving method, drive circuit, touch module, panel and the device of touch module
CN104867441B (en) A kind of image element circuit, display device and display drive method
CN108597450A (en) Pixel circuit and its driving method, display panel
CN107170407A (en) Pixel unit circuit, image element circuit, driving method and display device
CN109087610A (en) AMOLED pixel-driving circuit, driving method and display panel
CN109523956A (en) Pixel circuit and its driving method, display device
CN109215582A (en) Display panel, the driving method of pixel circuit and display device
CN103400548B (en) Pixel-driving circuit and driving method, display device
CN109599062A (en) Pixel circuit and its driving method, display device
CN105096818B (en) Display device and its image element circuit, driving method
CN109979394A (en) Pixel circuit and its driving method, array substrate and display device
CN105185321B (en) AMOLED driving circuits, display panel and display
CN110010072A (en) Pixel circuit and its driving method, display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant