CN102906026B - 光信息记录媒体以及电荷蓄积型存储器 - Google Patents

光信息记录媒体以及电荷蓄积型存储器 Download PDF

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CN102906026B
CN102906026B CN201180025163.XA CN201180025163A CN102906026B CN 102906026 B CN102906026 B CN 102906026B CN 201180025163 A CN201180025163 A CN 201180025163A CN 102906026 B CN102906026 B CN 102906026B
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aforementioned
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titanium
silica
coated
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CN102906026A (zh
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大越慎一
所裕子
箱江史吉
角渕由英
桥本和仁
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University of Tokyo NUC
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    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
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    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/36—Compounds of titanium
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
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    • H10N50/00—Galvanomagnetic devices
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C01P2002/00—Crystal-structural characteristics
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    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
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    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties

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  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • Inorganic Chemistry (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN201180025163.XA 2010-05-21 2011-04-15 光信息记录媒体以及电荷蓄积型存储器 Expired - Fee Related CN102906026B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010117342A JP5733736B2 (ja) 2010-05-21 2010-05-21 酸化チタン粒子の製造方法
JP2010-117342 2010-05-21
PCT/JP2011/059344 WO2011145416A1 (ja) 2010-05-21 2011-04-15 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ

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CN102906026B true CN102906026B (zh) 2014-09-10

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US (1) US9079782B2 (https=)
EP (1) EP2573048B1 (https=)
JP (1) JP5733736B2 (https=)
KR (1) KR101834583B1 (https=)
CN (1) CN102906026B (https=)
WO (1) WO2011145416A1 (https=)

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Publication number Priority date Publication date Assignee Title
US20160237331A1 (en) * 2013-10-04 2016-08-18 The University Of Tokyo Heat storage/dissipation material and heat storage/dissipation system
CN105062149B (zh) * 2015-07-20 2017-08-08 苏州宇希新材料科技有限公司 一种纳米二氧化钛的改性方法
CN105800683B (zh) * 2016-02-24 2017-06-13 北京交通大学 一种一维阵列式TiOx纳米材料的制备方法
JP6861393B2 (ja) * 2016-10-25 2021-04-21 パナソニックＩｐマネジメント株式会社 圧力センサ
JP6604370B2 (ja) * 2017-11-02 2019-11-13 堺化学工業株式会社 水酸化チタンの製造方法
JP7207399B2 (ja) * 2018-03-30 2023-01-18 ソニーグループ株式会社 磁性粉末の製造方法および磁気記録媒体の製造方法
CN110071122B (zh) * 2019-04-18 2021-01-15 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示面板
CN111040473B (zh) * 2019-11-26 2021-02-23 广东盈骅新材料科技有限公司 亚氧化钛黑色颜料及其制备方法
US12272476B2 (en) * 2020-10-26 2025-04-08 Tdk Corporation Photodetection element and receiver
CN115517535B (zh) * 2022-09-30 2025-11-07 武汉苏泊尔炊具有限公司 用于锅具的导磁材料、其制备方法和包括导磁材料的锅具
CN116375079B (zh) * 2023-04-07 2025-05-27 上海大学 一种无还原剂快速制备β-Ti3O5的方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
WO2008067156A2 (en) * 2006-11-15 2008-06-05 Reading Alloys, Inc. Production of high-purity titanium monoxide and capacitor production therefrom
CN101333003A (zh) * 2008-08-01 2008-12-31 上海特旺光电材料有限公司 五氧化三钛镀膜材料的制备方法

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JPH04224113A (ja) * 1990-12-26 1992-08-13 Osaka Titanium Co Ltd 蒸着用酸化チタンの製造方法
JP3509838B2 (ja) * 1996-12-16 2004-03-22 戸田工業株式会社 鉄を主成分とする金属磁性粒子粉末を使用している磁気記録媒体の非磁性下地層用酸化チタン粒子粉末、該酸化チタン粒子粉末を用いた非磁性下地層を有する磁気記録媒体の基体並びに該基体を用いた磁気記録媒体
JP2003238156A (ja) * 2002-02-21 2003-08-27 Toho Titanium Co Ltd チタン酸リチウムの製造方法およびリチウムイオン電池ならびにその電極
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JP5301211B2 (ja) * 2008-07-23 2013-09-25 東邦チタニウム株式会社 亜酸化チタンの製造方法
JP5549939B2 (ja) 2008-12-04 2014-07-16 国立大学法人 東京大学 酸化チタン粒子、その製造方法、磁気メモリ及び電荷蓄積型メモリ
JP5736664B2 (ja) * 2010-04-30 2015-06-17 国立大学法人 東京大学 酸化チタン粒子、その製造方法、磁気メモリ、光情報記録媒体及び電荷蓄積型メモリ

Patent Citations (2)

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WO2008067156A2 (en) * 2006-11-15 2008-06-05 Reading Alloys, Inc. Production of high-purity titanium monoxide and capacitor production therefrom
CN101333003A (zh) * 2008-08-01 2008-12-31 上海特旺光电材料有限公司 五氧化三钛镀膜材料的制备方法

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JP5733736B2 (ja) 2015-06-10
JP2011241136A (ja) 2011-12-01
EP2573048B1 (en) 2019-03-27
EP2573048A1 (en) 2013-03-27
KR20130109978A (ko) 2013-10-08
EP2573048A4 (en) 2016-03-02
US9079782B2 (en) 2015-07-14
CN102906026A (zh) 2013-01-30
WO2011145416A1 (ja) 2011-11-24
KR101834583B1 (ko) 2018-03-05
US20130105723A1 (en) 2013-05-02

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