CN102903605B - Semiconductor processing device and control method - Google Patents
Semiconductor processing device and control method Download PDFInfo
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- CN102903605B CN102903605B CN201110215819.6A CN201110215819A CN102903605B CN 102903605 B CN102903605 B CN 102903605B CN 201110215819 A CN201110215819 A CN 201110215819A CN 102903605 B CN102903605 B CN 102903605B
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Abstract
The invention discloses a semiconductor processing device. The semiconductor processing device comprises a microcavity part used for containing and processing a semiconductor wafer. The microcavity part comprises an upper cavity part with an upper cavity inner wall and a lower cavity part with a lower cavity inner wall. The upper cavity part and the lower cavity part can move between an opening position for loading or removing the semiconductor wafer and a closing position for tightly containing the semiconductor wafer. The semiconductor processing device further comprises a drive device. The drive device comprises a plurality of drivers. Each driver corresponds to a subarea of the upper cavity inner wall or lower cavity inner wall. The drivers drive a gap between the corresponding area of the upper cavity inner wall or lower cavity inner wall and the semiconductor wafer to change so that flow pattern of processing fluid in the gap is controlled.
Description
[technical field]
The present invention relates to the field of surface treatment of semiconductor crystal wafer or similar work piece, particularly one is used for chemical treatment semiconductor wafer surface, and the device of clean, etching and other process.
[background technology]
Wafer is the carrier producing used in integrated circuits.In actual production, need the wafer prepared to have surface that is smooth, ultra-clean, and two kinds can be divided into for the preparation of the existing method of ultra-clean wafer surface: the wet treatment process of such as submergence and spraying technique, and such as based on the dry process process of chemical gaseous phase and plasma technology.Wherein wet treatment process is that prior art adopts method comparatively widely, and wet treatment process generally includes and adopts suitable chemical solution submergence semiconductor crystal wafer or spray the succession of steps compositions such as semiconductor crystal wafer.
Comprise a kind of wet treatment process that adopts in prior art and the semiconductor processing device of ultra-clean process is carried out to wafer.Being formed with one in this semiconductor processing device can close receipt process the micro chamber of semiconductor crystal wafer, this micro chamber can be in open mode for loading and removing semiconductor crystal wafer, also the process of closed condition for semiconductor crystal wafer can be in, wherein chemicals and other fluid described micro chamber can be introduced in processing procedure.Described open mode and closed condition drive upper and lower two chamber inner walls relative movement vertically forming described micro chamber to realize by two drive units comprised in this device respectively.
Find in actual use, need in some cases to make to flow according to predetermined way in the space of chemicals between described micro chamber and processed semiconductor crystal wafer, such as make described chemicals flow to surrounding from the center of chamber inner wall.The mode of prior art adopts the described chemicals of control enter the entry position of described micro chamber and control the exit position that described chemicals enters described micro chamber, and carrier when simultaneously adopting the gas flowing into micro chamber to flow as described chemicals makes described chemicals flow according to predetermined way in described space.Invention proposes providing the another kind of current method of chemicals in micro chamber that control to meet the demand of user completely.
[summary of the invention]
One object of the present invention is to provide a kind of semiconductor processing device, can control the flowing of chemicals in described micro chamber in described semiconductor processing device by the localized voids width changed between micro chamber and semiconductor crystal wafer.
Another object of the present invention is to the control method that a kind of semiconductor processing device is provided, the flowing of chemicals in described micro chamber can be controlled by the localized voids width changed between micro chamber and semiconductor crystal wafer by described control method.
According to object of the present invention, the invention provides a kind of semiconductor processing device, described semiconductor processing device comprises one for holding and process the micro chamber portion of semiconductor crystal wafer, described micro chamber portion comprises the portion of upper chamber with upper chamber's inwall and the lower chambers portion with lower chambers inwall, portion of described upper chamber and lower chambers portion can one for load or remove semiconductor crystal wafer the off-position of open position and for tight holding semiconductor wafer between move
When off-position, semiconductor crystal wafer is installed in the cavity of described upper chamber inwall and the formation of lower chambers inwall, and and be formed for processing the space that fluid flows between described cavity inner wall, at least one enters described cavity entrance and at least one outlet for cavity described in process fluid expulsion for process fluid is also comprised in described micro chamber portion
Also comprise a drive unit, described drive unit comprises several drivers, each driver corresponds to the subregion of described upper chamber inwall or lower chambers inwall, and the space between the corresponding region of upper chamber's inwall or lower chambers inwall described in described driver drives and semiconductor crystal wafer changes.
Further, portion of described upper chamber or lower chambers portion also comprise skim elastic base plate, a surface of described thin layer elastic base plate forms described upper chamber inwall or described lower chambers inwall, and another side and several drivers described of described thin layer elastic base plate fit.
Further, described driver is fluid driver, the different regional areas of the another side of described thin layer elastic base plate are fitted with several fluid drivers described respectively and are contacted, when one of them fluid driver expands, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and the actuating force pointing to described cavity inside to the corresponding region of described thin layer elastic base plate and its laminating, make cavity inner wall corresponding to this regional area form projection; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and the actuating force pointing to described cavity outside to the corresponding region of described thin layer elastic base plate and its laminating, the cavity inner wall making this regional area corresponding forms depression.
Further, the size of described actuating force expand to described fluid driver or the degree of shrinking relevant, the direction of described actuating force is in swelling state to described fluid driver or contraction state is relevant.
Further, portion of described upper chamber or lower chambers portion also comprise box body portion that is fixing or the described thin layer elastic base plate that is connected, in described thin layer elastic base plate and described box body portion, several drivers described are held in clamping, and described box body portion provides stable support force in each driver described.
Further, the preset width in described space is between 0.01mm and 10mm.
Further, described semiconductor processing device also comprises process fluid supply apparatus and process fluid collection device,
Described process fluid supply apparatus, is connected to the entrance entering described cavity for process fluid, for providing process fluid, and
Described process fluid collection device, is connected to the outlet for cavity described in process fluid expulsion, for collecting the process fluid after process semiconductor crystal wafer,
Wherein, described process fluid comprises chemicals and gas.
Further, the edge in portion of described upper chamber and lower chambers portion comprises corresponding hole, post position, portion of described upper chamber and described lower chambers portion can along run through hole, described post position column guiding under one for load or remove semiconductor crystal wafer the off-position of open position and for tight holding semiconductor wafer between move.
Further, one in portion of described upper chamber and described lower chambers portion is fixed in the precalculated position of described column and cannot moves along described column,
When portion of described upper chamber is fixed, the below in described lower chambers portion also comprises lower part driving device, described lower part driving device comprises lower lamina tecti and cover plate of going to the bottom, described lower lamina tecti and cover plate of going to the bottom comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of described cover plate of going to the bottom upwards is extended with downside wall, the baseplate part of described lower lamina tecti, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described lower lamina tecti and cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up by the lower chambers portion of described lower lamina tecti carrying along the guiding of described column or move down;
When described lower chambers portion is fixed, the top in portion of described upper chamber also comprises upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate is upwards extended with downside wall, the baseplate part of described upper top cover plate, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part one side down of described upper bottom plate is connected with portion of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the portion of upper chamber that is connected with described upper bottom plate plate moves up along described column or moves down.
The present invention provides a kind of control method of semiconductor processing device simultaneously, and described control method comprises: drive described two chamber portions in an open position; Loading semiconductor crystal wafer is positioned on described lower chambers inwall; Drive described two chamber portions in the closed position; Inject process fluid from described entrance, make described process fluid along described interstitial flow, and derive described process fluid from described outlet; At different time, there is deformation in the corresponding region controlling upper chamber's inwall or lower chambers inwall described in some or multiple driver drives according to predetermined policy, the gap length for the flowing of process fluid making this regional area corresponding changes, and then described process fluid is flowed according to predetermined pattern.
Compared with prior art, semiconductor processing device in the present invention adopts the mode arranging multiple driver in portion of upper chamber and lower chambers portion, there is provided the actuating force of multiple spot to the upper chamber's inwall or the lower chambers inwall that surround into described micro chamber at different time and diverse location, space between the regional area of described upper chamber inwall or lower chambers inwall and processed semiconductor crystal wafer is changed, and then the guide functions such as extruding and adhesive are produced to the flowing of the chemicals of described micro chamber inside.Briefly, the semiconductor processing device in the present invention adopts the space of dynamic change to control the flowing of the chemicals being positioned at described micro chamber inside.
[accompanying drawing explanation]
In conjunction with reference accompanying drawing and ensuing detailed description, the present invention will be easier to understand, the structure member that wherein same Reference numeral is corresponding same, wherein:
Fig. 1 is the micro chamber portion schematic perspective view in one embodiment in the present invention;
Fig. 2 is portion of the upper chamber schematic perspective view in one embodiment in the present invention;
Fig. 3 is the semiconductor processing device assembling schematic diagram in one embodiment in the present invention;
Fig. 4 is the semiconductor processing device explosive decomposition figure in one embodiment in the present invention;
Fig. 5 is the upper mounted plate schematic perspective view in one embodiment in the present invention;
Fig. 6 is portion of the upper chamber schematic perspective view in one embodiment in the present invention;
Fig. 7 is the column drive unit explosive decomposition figure in one embodiment in the present invention; With
Fig. 8 is the control method method flow diagram in one embodiment of the semiconductor processing device in the present invention.
[embodiment]
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
The present invention for convenience of description, first describes the micro chamber of one of the core component as described semiconductor processing device.Described micro chamber is used for holding and process semiconductor crystal wafer.
Please refer to Fig. 1, it illustrates the schematic perspective view of micro chamber portion in an embodiment 100 in the present invention.Described micro chamber portion 100 comprises portion of upper chamber 120 and lower chambers portion 140, upper chamber's inwall and upper periphery part is formed in portion of described upper chamber 120, form chamber inner wall 142 and lower peripheral portion 144 in described lower chambers portion 140, described upper chamber inwall, upper periphery part, lower peripheral portion 144 and lower chambers inwall 142 surround into one for holding and process the cavity of semiconductor crystal wafer.Portion of described upper chamber 120 and described lower chambers portion 140 can by changing under the effect of the mechanical structures such as such as column, slide rail or flip-up style structure or guiding between an off-position and an open position.When in open position, portion of described upper chamber 120 and described lower chambers portion 140 disconnected from each other so that load and remove that will be processed or processed semiconductor crystal wafer in described cavity; When in closed position, portion of described upper chamber 120 and described lower chambers portion 140 correspondence fit tightly, and described upper chamber inwall, upper periphery part, lower peripheral portion 144 and lower chambers inwall 142 surround into described cavity.When semiconductor crystal wafer is loaded in described cavity, and when described cavity is in the closed position, chemical reagent and other fluids can be introduced described cavity to analyze the semiconductor crystal wafer in it, to clean, to etch and other process, and in processing procedure and after being disposed, the described chemical reagent after process and other fluid are drawn described cavity.
Specifically, processed semiconductor crystal wafer is housed inside in the cavity of described upper chamber inwall, upper periphery part, lower peripheral portion 144 and lower chambers inwall 142 formation.The space of expection also should be there is between described semiconductor crystal wafer and described upper and lower cavity chamber interior walls, the preset width in described space is usually between 0.01mm and 10mm, should be understood that, the width in described space can be changed by the tightness degree of upper and lower chamber portion laminating, and along with the change in these spaces, the different flow pattern of the process fluid for micro chamber can be realized.Described micro chamber can also comprise at least one supplied gas and enter the outlet that the entrance of described micro chamber and at least one supplied gas discharge described micro chamber, the gas being entered described micro chamber by described entrance as carrier during described process fluid flowing, also can control the flow pattern of described process fluid between described space to a certain extent.But as one of Focal point and difficult point of the present invention, the inside in portion of described upper chamber 120 and described lower chambers portion 140 can also comprise several drivers, several drivers described provide actuating force in described upper chamber inwall or described lower chambers inwall at different time and diverse location, make the corresponding region of described upper chamber inwall or lower chambers inwall that deformation occur, also namely make this regional area change for the gap length of process fluid flowing, and then described process fluid is flowed according to predetermined pattern.
For this reason, incorporated by reference to reference to figure 2, it illustrates the schematic perspective view of portion of upper chamber 120 in an embodiment 200 in the present invention.Portion of described upper chamber 200 comprises upper chamber's inner wall part 220 and upper cartridge body portion 240, and is held on multiple the fluid drivers 260 between described upper chamber inner wall part 220 and described upper cartridge body portion 240.
Described upper chamber inner wall part 220 comprises a rounded thin layer elastic base plate, and the one side 222 of described thin layer elastic base plate forms described upper chamber inwall, and the edge of described thin layer elastic base plate has also extended to form upper periphery part 224, is also illustrated rim; The another side of described thin layer elastic base plate has extended to form cylindrical upper side wall 226, and the inward flange of described upper side wall 226 is formed with the first screw thread (not shown).
Described upper cartridge body portion 240 comprises rectangular or square shaped baseplate part 242, the one side of described baseplate part 242 extends to form the round flange 244 corresponding to upper side wall 226, and the outward flange of described round flange 244 is formed with the second screw thread (not shown) of coupling first screw thread.By described first screw thread and the second screw thread, described upper chamber inner wall part 220 can be rotated is installed in described upper cartridge body portion 240, is also formed with the cavity holding described multiple fluid driver 260 between described upper chamber inner wall part 220 and described upper cartridge body portion 240 simultaneously.
Described multiple fluid driver 260 comprises first fluid driver, second fluid driver, the 3rd fluid driver, the 4th fluid driver, the 5th fluid driver, the 6th fluid driver and the 7th fluid driver (not shown).Wherein, first fluid driver is positioned at middle position, remains six fluid drivers and is uniformly distributed around described first fluid driver.Each fluid driver in described multiple fluid driver 260 is held between described thin layer elastic base plate and described upper cartridge body portion 240 surface relative to described thin layer elastic base plate.In one embodiment, each fluid driver can be the cylindrical airbag of formed objects, and the upper and lower surface of described cylindrical airbag is by the surface of glue and described thin layer elastic base plate and described upper cartridge body portion 240 surface adhesive relative to described thin layer elastic base plate.Described upper cartridge body portion 240 can adopt thicker alloy material to make, to provide stable support force in each fluid driver described.Described upper chamber inner wall part 220 can adopt high temperature resistant and corrosion resistant plastic material to make, and the thin layer elastic base plate forming upper chamber's inwall is thinner and have elasticity.Predictably, when certain fluid driver expands, can provide perpendicular to described upper chamber inwall and the corresponding region that contacts with its laminating to described thin layer elastic base plate of the actuating force pointing to described micro chamber inside, make described thin layer elastic base plate form projection towards this regional area of micro chamber; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall and the actuating force pointing to described micro chamber outside to the corresponding region of described thin layer elastic base plate and its laminating, make described thin layer elastic base plate form depression towards this regional area of micro chamber.Be correlated with in the fit position that contacts of active position and described fluid driver and the described thin layer elastic base plate of obvious described actuating force, the size of described actuating force expand to described fluid driver or the degree of shrinking relevant, the direction of described actuating force is in swelling state to described fluid driver or contraction state is relevant.
Because fluid can disperse when encountering projection, can converge when encountering depression.If now described micro chamber inside is utilizing chemicals to process described semiconductor crystal wafer, then because space between described upper chamber inwall and described semiconductor crystal wafer is in variable condition, the flowing being positioned at the chemicals of described micro chamber inside also will change.Such as, described first fluid driver expands and remains on certain position, the central authorities of described thin layer elastic base plate can be made to form projection, also the space between upper chamber's inwall that namely this regional area is corresponding and described semiconductor crystal wafer diminishes, then the chemicals being positioned at micro chamber inside will flow from middle position to position, edge; For another example, described first fluid driver expands and remains on certain position, the central authorities of described thin layer elastic base plate can be made to form projection, then described second fluid driver, the 3rd fluid driver, the 4th fluid driver, the 5th fluid driver, the 6th fluid driver and the 7th fluid driver expand successively and shrink, then the chemicals being positioned at micro chamber inside described in will stream dynamic along the edge ring of described micro chamber.That is, when each fluid driver is according to predetermined strategy, there is provided actuating force in described upper chamber inwall at different time and diverse location, after space between described upper chamber inwall and semiconductor crystal wafer is changed, the effect of the type of flow of the chemicals controlling described micro chamber inside can be reached.
Accordingly, lower chambers portion 140 also can have the identical or similar structure in portion of upper chamber 200 as shown in Figure 2.
In sum, described semiconductor processing device can by the expansion of described fluid driver and contraction is provided in different time and diverse location provides actuating force in described upper chamber inwall or described lower chambers inwall.Described fluid driver can be airbag or hydraulic unit driver.In order to obtain good control effects, the quantity of described fluid driver can suitably adopt more multiple, and the distribution of described fluid driver should relative to described upper and lower chamber inner wall as far as possible evenly.And how described fluid driver clamps and be contained in other words in portion of described upper chamber 120 and described lower chambers portion 140, also can adopt other special formed mechanical structure, and only should not be confined to the mode described in Fig. 2 shown in embodiment.Certainly, in order to introduce process fluid, described micro chamber portion 100 also should include at least one enters described micro chamber entrance and at least one outlet for micro chamber described in process fluid expulsion for process fluid.And process fluid supply apparatus and process fluid collection device (not specifically illustrating) accordingly, described process fluid supply apparatus can be connected to and supply to process the entrance that fluid enters described micro chamber, for providing process fluid; Described process fluid collection device is connected to the outlet for micro chamber described in process fluid expulsion, for collecting the waste liquid after process fluid treatment semiconductor crystal wafer.In certain embodiments, described process fluid not only comprises the liquid such as chemicals, also comprises the gas as the carrier during liquid flows such as chemicals.
Because described semiconductor processing device not only comprises micro chamber, the corresponding mechanical structure of ordering about portion of described upper chamber and lower chambers portion and converting between a closed position and a open position also should be comprised.So all many-sides in order to describe described semiconductor processing device, please continue to refer to Fig. 3 and Fig. 4, which respectively show the assembling schematic diagram of described semiconductor processing device in an embodiment 300 and explosive decomposition figure.Described semiconductor processing device 300 comprises the portion of upper chamber 320 and lower chambers portion 340 that form micro chamber, the edge in portion of described upper chamber 320 and lower chambers portion 340 comprises corresponding hole, post position 360, portion of described upper chamber 320 can along run through hole, described post position 360 column 380 guiding under one for load and/or remove this semiconductor crystal wafer open position and one for closely hold this semiconductor crystal wafer off-position between move.The two ends of described column 380 can be formed with screw thread.
Wherein, described lower chambers portion 340, for installing and fixing described column 380, includes the screw of corresponding described screw thread in the hole, post position 360 in described lower chambers portion 340, described column 380 can be rotated and be installed in described lower chambers portion 340.Recognize, described lower chambers portion 340 is cannot the movement along the guiding of described column 380 simultaneously.And the top in portion of described upper chamber 320 also comprises upper mounted plate 322, the structure of fixed plate 322 can reference diagram 5, the first cylindrical parietal 504 that first substrate portion 502 rectangular described in fixed plate 322 and the face center downward from described first substrate portion 502 extend downwards.The hole, four post positions 506 that can hold column is formed in the corner in described first substrate portion 502.The internal diameter in hole, described post position 506 is greater than the external diameter of described column 380, and fixed plate 322 can be fixed on top or the middle and upper part of described column 380 by the nut 388 by the described column 380 of coupling.
The structure in portion of described upper chamber 320 is similar to portion of upper chamber shown in Fig. 2 substantially, but outward appearance is slightly different, please refer to shown in Fig. 6.Portion of described upper chamber 320 not only comprises rectangular upper cartridge body portion 602, described upper cartridge body portion 602 comprises multipoint pressure generation device (not shown), and portion of described upper chamber 320 also comprises the second cylindrical parietal 604 extended upward from the face center upward in described upper cartridge body portion 602 simultaneously.Described second cylindrical parietal 604 corresponds to the first cylindrical parietal 504 in fixed plate, but the external diameter of described second cylindrical parietal 604 is slightly less than the internal diameter of described first cylindrical parietal 504, when after described second cylindrical parietal 604 accommodation with described first cylindrical parietal 504, described first substrate portion 502, first cylindrical parietal 504, second cylindrical parietal 604 and upper cartridge body portion 602 are around becoming the cavity that is held airbag 323, and described airbag 323 is also fastenedly connected with the surface in described first substrate portion 502 and upper cartridge body portion 602.
Be different from the fluid driver in described multipoint pressure generation device, the expansion of described airbag 323 and contraction provide portion of described upper chamber 320 along the described guiding of column 380 actuating force of movement, when described airbag 323 expands, because fixed plate 322 cannot slide along described column 380, so portion of described upper chamber 320 will be driven by described airbag 323 and move down along described column 380, until portion of described upper chamber 320 and described lower chambers portion 340 fit tightly and in the closed position.When described airbag 323 shrinks, because fixed plate 322 cannot slide along described column 380, so portion of described upper chamber 320 will be driven by described airbag 323 and move up along described column 380, until portion of described upper chamber 320 is disconnected from each other and in an open position with described lower chambers portion 340.
Those skilled in the art can expect, how the portion of upper chamber in described semiconductor processing device and lower chambers portion change between described off-position and described open position will be changeable.For example, portion of described upper chamber and described lower chambers portion can adopt the flip-up style structure of similar electric baking pan and so on; Portion of described upper chamber and described lower chambers portion can adopt the Pop-up structure of similar CD-ROM drive opening-closing structure.Only adopt the column of vertical direction as guiding for the semiconductor processing device shown in embodiment 300, portion of described upper chamber and described lower chambers portion slide up and down along the guiding of described column just can multiple different mode, such as portion of described upper chamber is fixed in a certain position of described column, and described lower chambers portion driven device drives and moves up and down under the guiding of described column; Or portion of described upper chamber and described lower chambers portion respectively driven device drive and relatively under the guiding of described column to move up and down.
Obviously, be easy to associate, an a certain position be fixed on described column in portion of described upper chamber or described lower chambers portion is easy to realize, not only can adopts the nut fixed form in embodiment 300, can also fixture or clamping close device etc. be adopted.And drive portion of described upper chamber or described lower chambers portion to move down along the guiding of described column to be equally also easy to realize.Airbag type of drive for example in embodiment 300, can be made as a kind of column drive unit.
Please refer to Fig. 7, it illustrates the explosive decomposition figure of described column drive unit in an embodiment 700.Described column drive unit 700 comprises lamina tecti 720 and bottom plate 740, described lamina tecti 720 and bottom plate 740 comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part 722 of described lamina tecti 720 is extended with side wall 724 downwards, the baseplate part 742 of described bottom plate 740 is upwards extended with downside wall 744, the baseplate part 722 of described lamina tecti 720, side wall 724, fluid driver 760 is comprised in the cavity that the baseplate part 722 of downside wall 744 and described bottom plate 740 surrounds, described fluid driver 760 is closely fixedly connected with the baseplate part of described lamina tecti 720 with described bottom plate 740.When in described lamina tecti 720 and described bottom plate 740 is fixed in the precalculated position of described column, by expansion and the contraction of described fluid driver 760, another and coupled assembly in described lamina tecti 720 and described bottom plate 740 can be driven to move along described column.
In other words, when described column drive unit 700 is arranged at below described lower chambers portion, described column drive unit can be referred to as lower part driving device, described lower part driving device comprises lower lamina tecti and cover plate of going to the bottom, described lower lamina tecti and cover plate of going to the bottom comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of described cover plate of going to the bottom upwards is extended with downside wall, the baseplate part of described lower lamina tecti, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described lower lamina tecti and cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up by the lower chambers portion of described lower lamina tecti carrying along the guiding of described column or move down.
In like manner, when described column drive unit 700 is arranged at above portion of described upper chamber, described column drive unit can be referred to as upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate is upwards extended with downside wall, the baseplate part of described upper top cover plate, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part one side down of described upper bottom plate is connected with portion of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the portion of upper chamber that is connected with described upper bottom plate moves up along described column or moves down.
Invention also provides a kind of control method of semiconductor processing device, please refer to Fig. 8, it illustrates the method flow diagram of control method in an embodiment 800 of the semiconductor processing device in the present invention.The control method 800 of described semiconductor processing device comprises:
Step 801, drives described two chamber portions in an open position;
For semiconductor processing device shown in Fig. 3, described airbag 323 can be made to shrink, portion of described upper chamber 320 will be driven by described airbag 323 and move up along described column 380, until portion of described upper chamber 320 is disconnected from each other and in an open position with described lower chambers portion 340.
Step 802, loads semiconductor crystal wafer and is positioned on described lower chambers inwall;
Manual type or manipulator is utilized to be positioned over by semiconductor crystal wafer on described lower chambers inwall.
Step 803, drives described two chamber portions in the closed position;
Make described airbag 323 expand, portion of described upper chamber 320 will be driven by described airbag 323 and move down along described column 380, until portion of described upper chamber 320 and described lower chambers portion 340 fit tightly mutually and in the closed position.
Step 804, injects process fluid from described entrance, makes described process fluid along described interstitial flow, and derive described process fluid from described outlet;
Process fluid herein typically refers to chemicals, such as described semiconductor processing device is used for the wet chemical etch of film copper, described process fluid can comprise the mixture of hydrogen peroxide, nitric acid and hydrofluoric acid, and described process fluid can also comprise the inert gas as chemicals flowing carrier.Described entrance and exit can be more than one, and be arranged at any diverse location in described micro chamber portion.
Step 805, at different time, there is deformation in the corresponding region controlling upper chamber's inwall or lower chambers inwall described in some or multiple driver drives according to predetermined policy, the gap length for the flowing of process fluid making this regional area corresponding changes, and then described process fluid is flowed according to predetermined pattern.
Can flow according to the flow pattern of the expectation of user in order to described chemicals can be made, each fluid driver can be made according to predetermined strategy, there is provided actuating force in described chamber inner wall at different time and diverse location, space between described chamber inner wall and semiconductor crystal wafer is changed, to reach the effect of the flow pattern of the chemicals controlling described micro chamber inside.
Above-mentioned explanation fully discloses the specific embodiment of the present invention.It is pointed out that the scope be familiar with person skilled in art and any change that the specific embodiment of the present invention is done all do not departed to claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to described embodiment.
Claims (9)
1. a semiconductor processing device, is characterized in that, it comprises:
Comprise one for holding and process the micro chamber portion of semiconductor crystal wafer, described micro chamber portion comprises the portion of upper chamber with upper chamber's inwall and the lower chambers portion with lower chambers inwall, portion of described upper chamber and lower chambers portion can one for load or remove semiconductor crystal wafer the off-position of open position and for tight holding semiconductor wafer between move
When off-position, semiconductor crystal wafer is installed in the cavity of described upper chamber inwall and the formation of lower chambers inwall, and and be formed for processing the space that fluid flows between described cavity inner wall, at least one enters described cavity entrance and at least one outlet for cavity described in process fluid expulsion for process fluid is also comprised in described micro chamber portion
Also comprise a drive unit, described drive unit comprises several drivers, each driver corresponds to the subregion of described upper chamber inwall or lower chambers inwall, space between the corresponding region of upper chamber's inwall or lower chambers inwall described in described driver drives and semiconductor crystal wafer changes
Portion of described upper chamber or lower chambers portion also comprise skim elastic base plate, and a surface of described thin layer elastic base plate forms described upper chamber inwall or described lower chambers inwall, and another side and several drivers described of described thin layer elastic base plate fit.
2. semiconductor processing device according to claim 1, it is characterized in that, described driver is fluid driver, fit with several fluid drivers described respectively and contact in the different corresponding regions of the another side of described thin layer elastic base plate, when one of them fluid driver expands, can provide contact in described upper chamber inwall or described lower chambers inwall and the actuating force pointing to described cavity inside to the corresponding region of described thin layer elastic base plate and its laminating, make this corresponding region form projection; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and the actuating force pointing to described cavity outside to the corresponding region of described thin layer elastic base plate and its laminating, make this corresponding region form depression.
3. semiconductor processing device according to claim 2, it is characterized in that, the size of described actuating force expand to described fluid driver or the degree of shrinking relevant, the direction of described actuating force is in swelling state to described fluid driver or contraction state is relevant.
4. semiconductor processing device according to claim 1, it is characterized in that, portion of described upper chamber or lower chambers portion also comprise box body portion that is fixing or the described thin layer elastic base plate that is connected, in described thin layer elastic base plate and described box body portion, several drivers described are held in clamping, and described box body portion provides stable support force in each driver described.
5., according to the arbitrary described semiconductor processing device of Claims 1-4, it is characterized in that, the preset width in described space is between 0.01mm and 10mm.
6. semiconductor processing device according to claim 5, is characterized in that, described semiconductor processing device also comprises process fluid supply apparatus and process fluid collection device,
Described process fluid supply apparatus, is connected to the entrance entering described cavity for process fluid, for providing process fluid, and
Described process fluid collection device, is connected to the outlet for cavity described in process fluid expulsion, for collecting the process fluid after process semiconductor crystal wafer,
Wherein, described process fluid comprises chemicals and gas.
7. semiconductor processing device according to claim 6, it is characterized in that, the edge in portion of described upper chamber and lower chambers portion comprises corresponding hole, post position, portion of described upper chamber and described lower chambers portion can along run through hole, described post position column guiding under one for load or remove semiconductor crystal wafer the off-position of open position and for tight holding semiconductor wafer between move.
8. semiconductor processing device according to claim 7, is characterized in that, one in portion of described upper chamber and described lower chambers portion is fixed in the precalculated position of described column and cannot moves along described column,
When portion of described upper chamber is fixed, the below in described lower chambers portion also comprises lower part driving device, described lower part driving device comprises lower lamina tecti and cover plate of going to the bottom, described lower lamina tecti and cover plate of going to the bottom comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of described cover plate of going to the bottom upwards is extended with downside wall, the baseplate part of described lower lamina tecti, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described lower lamina tecti and cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up by the lower chambers portion of described lower lamina tecti carrying along the guiding of described column or move down;
When described lower chambers portion is fixed, the top in portion of described upper chamber also comprises upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise the baseplate part of correspondingly-shaped respectively, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate is upwards extended with downside wall, the baseplate part of described upper top cover plate, side wall, fluid driver is comprised in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and described cover plate of going to the bottom is fixedly linked,
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part one side down of described upper bottom plate is connected with portion of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the portion of upper chamber that is connected with described upper bottom plate plate moves up along described column or moves down.
9. a control method for semiconductor processing device, be applicable to semiconductor processing device according to claim 1, it is characterized in that, it comprises:
Drive described two chamber portions in an open position;
Loading semiconductor crystal wafer is positioned on described lower chambers inwall;
Drive described two chamber portions in the closed position;
Inject process fluid from described entrance, make described process fluid along described interstitial flow, and derive described process fluid from described outlet;
At different time, there is deformation in the corresponding region controlling upper chamber's inwall or lower chambers inwall described in some or multiple driver drives according to predetermined policy, the gap length for the flowing of process fluid making this corresponding region corresponding changes, and then described process fluid is flowed according to predetermined pattern.
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| CN201110215819.6A CN102903605B (en) | 2011-07-29 | 2011-07-29 | Semiconductor processing device and control method |
| PCT/CN2011/085065 WO2013016941A1 (en) | 2011-07-29 | 2011-12-30 | Adjustable semiconductor processing device and control method thereof |
| US14/363,286 US10283389B2 (en) | 2011-07-29 | 2011-12-30 | Adjustable semiconductor processing device and control method thereof |
| TW101121716A TWI469201B (en) | 2011-07-29 | 2012-06-18 | Adjustable semiconductor processing device and operating method thereof |
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| CN201110215819.6A CN102903605B (en) | 2011-07-29 | 2011-07-29 | Semiconductor processing device and control method |
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| CN102903605B true CN102903605B (en) | 2015-03-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1121057C (en) * | 1996-06-05 | 2003-09-10 | 兰姆研究公司 | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
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| US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
| JP2007502550A (en) * | 2003-06-13 | 2007-02-08 | ソフィア ウェン， | Method and apparatus for thin layer chemical processing of semiconductor wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1121057C (en) * | 1996-06-05 | 2003-09-10 | 兰姆研究公司 | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
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