CN102903605A - Semiconductor processing device and control method - Google Patents
Semiconductor processing device and control method Download PDFInfo
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- CN102903605A CN102903605A CN2011102158196A CN201110215819A CN102903605A CN 102903605 A CN102903605 A CN 102903605A CN 2011102158196 A CN2011102158196 A CN 2011102158196A CN 201110215819 A CN201110215819 A CN 201110215819A CN 102903605 A CN102903605 A CN 102903605A
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Abstract
The invention discloses a semiconductor processing device. The semiconductor processing device comprises a microcavity part used for containing and processing a semiconductor wafer. The microcavity part comprises an upper cavity part with an upper cavity inner wall and a lower cavity part with a lower cavity inner wall. The upper cavity part and the lower cavity part can move between an opening position for loading or removing the semiconductor wafer and a closing position for tightly containing the semiconductor wafer. The semiconductor processing device further comprises a drive device. The drive device comprises a plurality of drivers. Each driver corresponds to a subarea of the upper cavity inner wall or lower cavity inner wall. The drivers drive a gap between the corresponding area of the upper cavity inner wall or lower cavity inner wall and the semiconductor wafer to change so that flow pattern of processing fluid in the gap is controlled.
Description
[technical field]
The present invention relates to the field of surface treatment of semiconductor crystal wafer or similar workpiece, particularly a kind of for the chemical treatment semiconductor wafer surface, and the device of cleaning, etching and other processing.
[background technology]
Wafer is the carrier of producing used in integrated circuits.The wafer that needs to prepare in actual production has surface smooth, super cleaning, and can be divided into two kinds for the preparation of the existing method of super clean wafer surface: such as the wet treatment process of submergence and spraying technique, and such as the dry process process based on chemical gaseous phase and plasma technology.Wherein wet treatment process is that prior art adopts comparatively widely method, and the wet treatment process generally includes a succession of steps such as adopting suitable chemical solution submergence semiconductor crystal wafer or injection semiconductor crystal wafer and forms.
Comprise a kind of semiconductor processing device that adopts the wet treatment process wafer to be surpassed clean in the prior art.Be formed with a micro chamber that can closely receive and process semiconductor crystal wafer in this semiconductor processing device, this micro chamber can be in open mode for loading and removing semiconductor crystal wafer, also can be in closed condition to be used for the processing of semiconductor crystal wafer, wherein chemicals and other fluid can be introduced described micro chamber in the processing procedure.Described open mode and closed condition drive respectively upper and lower two chamber inner walls the relatively moving vertically that consists of described micro chamber by two drive units that comprise in this device and realize.
Find in actual use, need in some situation to make in the space of chemicals between described micro chamber and processed semiconductor crystal wafer and flow according to predetermined way, such as described chemicals is flowed around the mind-set from chamber inner wall.The mode of prior art is that the entry position and the described chemicals of control that adopt the described chemicals of control to enter described micro chamber enter the exit position of described micro chamber, and a carrier when adopting simultaneously the gas that flows into micro chamber to flow as described chemicals comes so that described chemicals flows according to predetermined way in described space.The present invention's design provides the current method of another kind of control chemicals in micro chamber to satisfy user's demand fully.
[summary of the invention]
One object of the present invention is to provide a kind of semiconductor processing device, can control chemicals flowing in described micro chamber by the localized voids width that changes between micro chamber and the semiconductor crystal wafer in the described semiconductor processing device.
Another object of the present invention is to provide a kind of control method of semiconductor processing device, can control chemicals flowing in described micro chamber by the localized voids width that changes between micro chamber and the semiconductor crystal wafer by described control method.
According to purpose of the present invention, the invention provides a kind of semiconductor processing device, described semiconductor processing device comprises one for the micro chamber section that holds and process semiconductor crystal wafer, described micro chamber section comprises the section of upper chamber with upper chamber's inwall and has the lower chambers section of lower chambers inwall, section of described upper chamber and lower chambers section can be used for loading or removing the open position and of semiconductor crystal wafer for mobile between the off-position of tight holding semiconductor wafer one
When off-position, semiconductor crystal wafer is installed in the cavity of described upper chamber inwall and the formation of lower chambers inwall, and and be formed with between the described cavity inner wall for the space of processing Fluid Flow in A, fluid enters entrance of described cavity and at least one is for the outlet of processing the described cavity of fluid expulsion for processing also to comprise at least one in the described micro chamber section
Also comprise a drive unit, described drive unit comprises several drivers, each driver is corresponding to the subregion of described upper chamber inwall or lower chambers inwall, and the corresponding region of described driver drives described upper chamber inwall or lower chambers inwall and the space between semiconductor crystal wafer change.
Further, section of described upper chamber or lower chambers section also comprise the skim elastic base plate, a surface of described thin layer elastic base plate forms described upper chamber inwall or described lower chambers inwall, and the another side of described thin layer elastic base plate and described several drivers fit.
Further, described driver is fluid driver, the different regional areas of the another side of described thin layer elastic base plate are fitted with described several fluid drivers respectively and are contacted, when one of them fluid driver expands, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and point to the actuating force of described cavity inside to the corresponding region of described thin layer elastic base plate and its applying, so that cavity inner wall corresponding to this regional area forms projection; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and point to the actuating force of described cavity outside to the corresponding region of described thin layer elastic base plate and its applying, so that cavity inner wall corresponding to this regional area forms depression.
Further, the size of described actuating force is relevant with the degree of described fluid driver expansion or contraction, and the direction of described actuating force is in swelling state with described fluid driver or contraction state is relevant.
Further, section of described upper chamber or lower chambers section also comprise box body section fixing or the described thin layer elastic base plate that links to each other, described several drivers are held in clamping in described thin layer elastic base plate and the described box body section, and described box body section provides stable support force in described each driver.
Further, the preset width in described space is between 0.01mm and 10mm.
Further, described semiconductor processing device also comprises to be processed fluid supply apparatus and processes fluid collection device,
Described processing fluid supply apparatus is connected in the entrance that enters described cavity for the processing fluid, is used for providing the processing fluid, and
Described processing fluid collection device is connected in for the outlet of processing the described cavity of fluid expulsion, for the processing fluid behind the collection and treatment semiconductor crystal wafer,
Wherein, described processing fluid comprises chemicals and gas.
Further, the edge of section of described upper chamber and lower chambers section comprises corresponding hole, post position, and section of described upper chamber and described lower chambers section can be along being used between the off-position of tight holding semiconductor wafer mobile at an open position and that is used for loading or remove semiconductor crystal wafer under the guiding of the column that runs through hole, described post position.
Further, in section of described upper chamber and the described lower chambers section one is fixed in the precalculated position of described column and can't moves along described column,
When section of described upper chamber is fixed, the below of described lower chambers section also comprises lower part driving device, described lower part driving device comprises lower lamina tecti and the cover plate of going to the bottom, described lower lamina tecti and the cover plate of going to the bottom comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of the described cover plate of going to the bottom has extended upward downside wall, the baseplate part of described lower lamina tecti, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and the described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described lower lamina tecti and the cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of the described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up along the guiding of described column by the lower chambers section of described lower lamina tecti carrying or move down;
When described lower chambers section is fixed, the top of section of described upper chamber also comprises upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate has extended upward downside wall, the baseplate part of described upper top cover plate, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part of described upper bottom plate one side down links to each other with section of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the section of upper chamber that links to each other with described upper bottom plate plate and move up or move down along described column.
The present invention provides a kind of control method of semiconductor processing device simultaneously, and described control method comprises: drive described two chamber sections and be shown in an open position; Loading semiconductor crystal wafer is positioned on the described lower chambers inwall; It is in the closed position to drive described two chamber sections; Inject the processing fluid from described entrance, so that described processing fluid is mobile along described space, and derive described processing fluid from described outlet; At different time, deformation occurs in the corresponding region according to the predetermined policy some or a plurality of driver drives described upper chamber inwalls of control or lower chambers inwall, change so that the gap length of Fluid Flow in A is processed in confession corresponding to this regional area, and then so that described processing fluid is mobile according to predetermined pattern.
Compared with prior art, semiconductor processing device employing among the present invention arranges the mode of a plurality of drivers in section of upper chamber and lower chambers section, provide the actuating force of multiple spot to the upper chamber's inwall that surrounds into described micro chamber or lower chambers inwall at different time and diverse location, so that the space between the regional area of described upper chamber inwall or lower chambers inwall and the processed semiconductor crystal wafer changes, and then to guide functions such as the mobile generation extruding of the chemicals of described micro chamber inside and adhesives.Simply, flowing of the chemicals that is positioned at described micro chamber inside controlled in the space of adopting capable of dynamic to change of the semiconductor processing device among the present invention.
[description of drawings]
In conjunction with reaching with reference to the accompanying drawings ensuing detailed description, the present invention will be more readily understood, structure member corresponding to same Reference numeral wherein, wherein:
Fig. 1 is the micro chamber section schematic perspective view in one embodiment among the present invention;
Fig. 2 is section of the upper chamber schematic perspective view in one embodiment among the present invention;
Fig. 3 is the semiconductor processing device assembling schematic diagram in one embodiment among the present invention;
Fig. 4 is the semiconductor processing device explosive decomposition figure in one embodiment among the present invention;
Fig. 5 is the upper mounted plate schematic perspective view in one embodiment among the present invention;
Fig. 6 is section of the upper chamber schematic perspective view in one embodiment among the present invention;
Fig. 7 is the column drive unit explosive decomposition figure in one embodiment among the present invention; With
Fig. 8 is the control method method flow diagram in one embodiment of the semiconductor processing device among the present invention.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
For convenience of description the present invention at first describes the micro chamber of one of core component as described semiconductor processing device.Described micro chamber is used for holding and processing semiconductor crystal wafer.
Please refer to Fig. 1, it shows the schematic perspective view of micro chamber section in an embodiment 100 among the present invention.Described micro chamber section 100 comprises section of upper chamber 120 and lower chambers section 140, form upper chamber's inwall and upper periphery part in the section of described upper chamber 120, form chamber inner wall 142 and following peripheral part 144 in the described lower chambers section 140, described upper chamber inwall, upper periphery part, following peripheral part 144 and lower chambers inwall 142 surround into a cavity that is used for holding and processing semiconductor crystal wafer.Section of described upper chamber 120 and described lower chambers section 140 can be by mechanical structures such as column, slide rail or flip-up style structure effect or guiding is lower changes between an off-position and an open position.When being shown in an open position, section of described upper chamber 120 and described lower chambers section 140 are disconnected from each other so that load and remove will be processed or processed semiconductor crystal wafer in described cavity; When in the closed position, section of described upper chamber 120 and described lower chambers section 140 correspondences fit tightly, and described upper chamber inwall, upper periphery part, following peripheral part 144 and lower chambers inwall 142 surround into described cavity.In semiconductor crystal wafer is loaded into described cavity, and when described cavity is in the closed position, chemical reagent and other fluids can be introduced described cavity with the semiconductor crystal wafer in it is analyzed, cleaning, etching and other processing, and in processing procedure and after being disposed, described chemical reagent and other fluid after processing are drawn described cavity.
Specifically, processed semiconductor crystal wafer is housed inside in the cavity of described upper chamber inwall, upper periphery part, following peripheral part 144 and 142 formation of lower chambers inwall.The space that also should have expection between described semiconductor crystal wafer and the described upper and lower cavity chamber interior walls, the preset width in described space is usually between 0.01mm and 10mm, should be understood that, can change the width in described space by the tightness degree of up and down chamber section applying, and along with the change in these spaces, can realize the different flow pattern for the processing fluid of micro chamber.Described micro chamber can also comprise that at least one supplied gas enters the entrance of described micro chamber and the outlet that at least one supplied gas is discharged described micro chamber, carrier when the gas that enters described micro chamber by described entrance can be used as described processing Fluid Flow in A also can be controlled the flow pattern of described processing fluid between described space to a certain extent.But as one of Focal point and difficult point of the present invention, the inside of section of described upper chamber 120 and described lower chambers section 140 can also comprise several drivers, described several drivers provide actuating force in described upper chamber inwall or described lower chambers inwall at different time and diverse location, so that deformation occurs in the corresponding region of described upper chamber inwall or lower chambers inwall, also be so that this regional area changes for the gap length of processing Fluid Flow in A, and then so that described processing fluid is mobile according to predetermined pattern.
For this reason, please in conjunction with reference to figure 2, it shows the schematic perspective view of section of upper chamber 120 in an embodiment 200 among the present invention.Section of described upper chamber 200 comprises upper chamber's inner wall part 220 and upper cartridge body section 240, and is held on a plurality of the fluid drivers 260 between described upper chamber inner wall part 220 and the described upper cartridge body section 240.
Described upper chamber inner wall part 220 comprises a rounded thin layer elastic base plate, and the one side of described thin layer elastic base plate 222 forms described upper chamber inwall, and the edge of described thin layer elastic base plate also extended to form upper periphery part 224, also namely illustrates flange; The another side of described thin layer elastic base plate has extended to form cylindrical upper side wall 226, and the inward flange of described upper side wall 226 is formed with the first screw thread (not shown).
Described upper cartridge body section 240 comprises rectangular or square shaped baseplate part 242, the one side of described baseplate part 242 extends to form the round flange 244 corresponding to upper side wall 226, and the outward flange of described round flange 244 is formed with the second screw thread (not shown) of coupling the first screw thread.By described the first screw thread and the second screw thread, described upper chamber inner wall part 220 rotation can be installed in the described upper cartridge body section 240, between described upper chamber inner wall part 220 and described upper cartridge body section 240, also be formed with the cavity that holds described a plurality of fluid driver 260 simultaneously.
Described a plurality of fluid driver 260 comprises first fluid driver, second fluid driver, the 3rd fluid driver, the 4th fluid driver, the 5th fluid driver, the 6th fluid driver and the 7th fluid driver (not shown).Wherein, the first fluid driver is positioned at the middle position, remains six fluid drivers and evenly distributes around described first fluid driver.Each fluid driver in described a plurality of fluid driver 260 is held between described thin layer elastic base plate and described upper cartridge body section 240 surface with respect to described thin layer elastic base plate.In one embodiment, each fluid driver can be the cylindrical airbag of formed objects, surface and described upper cartridge body section 240 surperficial bonding with respect to described thin layer elastic base plate of the upper and lower surface of described cylindrical airbag by glue and described thin layer elastic base plate.Described upper cartridge body section 240 can adopt thicker alloy material to make, to provide stable support force in described each fluid driver.Described upper chamber inner wall part 220 can adopt high temperature resistant and corrosion resistant plastic material to make, and it is thinner and have elasticity to form the thin layer elastic base plate of upper chamber's inwall.Predictably, when certain fluid driver expands, can provide perpendicular to described upper chamber inwall and point to the corresponding region that the actuating force of described micro chamber inside contacts with its applying to described thin layer elastic base plate, so that described thin layer elastic base plate forms projection towards this regional area of micro chamber; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall and point to the actuating force of described micro chamber outside to the corresponding region of described thin layer elastic base plate and its applying, so that described thin layer elastic base plate forms depression towards this regional area of micro chamber.Obvious described driving place of application of force is relevant with the contacted position of described thin layer elastic base plate with described fluid driver, the size of described actuating force is relevant with the degree of described fluid driver expansion or contraction, and the direction of described actuating force is in swelling state with described fluid driver or contraction state is relevant.
Because can disperse when fluid is run into projection, can converge when running into depression.If this moment, described micro chamber inside utilized chemicals that described semiconductor crystal wafer is processed, then owing to space between described upper chamber inwall and the described semiconductor crystal wafer is in variable condition, the flowing of chemicals that is positioned at described micro chamber inside also will change.Such as, described first fluid driver expands and remains on certain position, can make the central authorities of described thin layer elastic base plate form projection, upper chamber's inwall that also namely this regional area is corresponding and the space between the described semiconductor crystal wafer diminish, and the chemicals that then is positioned at micro chamber inside will flow to the position, edge from middle position; For another example, described first fluid driver expands and remains on certain position, can make the central authorities of described thin layer elastic base plate form projection, then described second fluid driver, the 3rd fluid driver, the 4th fluid driver, the 5th fluid driver, the 6th fluid driver and the 7th fluid driver expand successively and shrink, and then the described chemicals that is positioned at micro chamber inside will stream moving along the edge ring of described micro chamber.That is to say, when each fluid driver according to predetermined strategy, provide actuating force in described upper chamber inwall at different time and diverse location, so that after the space between described upper chamber inwall and the semiconductor crystal wafer changes, can reach the effect of the type of flow of the chemicals of the described micro chamber of control inside.
Accordingly, lower chambers section 140 also can have section of upper chamber 200 identical or similar structures as shown in Figure 2.
In sum, the expansion that described semiconductor processing device can be by described fluid driver and shrink and be provided at different time and diverse location provides actuating force in described upper chamber inwall or described lower chambers inwall.Described fluid driver can be airbag or hydraulic unit driver.In order to obtain to control preferably effect, the quantity of described fluid driver can suitably adopt more a plurality of, and the distribution of described fluid driver should be with respect to described upper and lower chamber inner wall as far as possible evenly.And described fluid driver how clamping be contained in other words in section of described upper chamber 120 and the described lower chambers section 140, also can adopt other special formed mechanical structure, and should only not be confined to the mode shown in the described embodiment of Fig. 2.Certainly, in order to introduce the processing fluid, described micro chamber section 100 also should include at least one, and fluid enters entrance of described micro chamber and at least one is for the outlet of processing the described micro chamber of fluid expulsion for processing.And process accordingly fluid supply apparatus and process fluid collection device (not specifically illustrating), described processing fluid supply apparatus can be connected in for processing fluid and enter the entrance of described micro chamber, is used for providing the processing fluid; Described processing fluid collection device is connected in for the outlet of processing the described micro chamber of fluid expulsion, for the waste liquid behind the collection and treatment fluid treatment semiconductor crystal wafer.In certain embodiments, described processing fluid not only comprises the liquid such as chemicals, the gas of the carrier when also comprising as liquid flows such as chemicals.
Because described semiconductor processing device not only comprises micro chamber, also should comprise and order about section of described upper chamber and lower chambers section in the corresponding mechanical structure of off-position and open position Transforms.So in order to describe all many-sides of described semiconductor processing device, please continue with reference to figure 3 and Fig. 4, it shows respectively assembling schematic diagram and the explosive decomposition figure of described semiconductor processing device in an embodiment 300.Described semiconductor processing device 300 comprises section of upper chamber 320 and the lower chambers section 340 that forms micro chamber, the edge of section of described upper chamber 320 and lower chambers section 340 comprises corresponding hole, post position 360, and section of described upper chamber 320 can be along being used for closely holding between the off-position of this semiconductor crystal wafer mobile at an open position and that is used for loading and/or remove this semiconductor crystal wafer under the guiding of the column 380 that runs through hole, described post position 360.The two ends of described column 380 can be formed with screw thread.
Wherein, described lower chambers section 340 is used for installing and fixing described column 380, includes the screw of corresponding described screw thread in the hole, post position 360 in the described lower chambers section 340, described column 380 rotations can be installed in the described lower chambers section 340.Recognize that simultaneously described lower chambers section 340 is can't be along the guiding of described column 380 and mobile.And the top of section of described upper chamber 320 also comprises upper mounted plate 322, the structure of fixed plate 322 can be with reference to figure 5, the described rectangular first substrate section 502 of fixed plate 322 and from downward first cylindrical parietal 504 that stretches out of the surperficial mediad towards the below of described first substrate section 502.In the hole, four post positions 506 that the tetragonal Cheng Youke of described first substrate section 502 holds column.The internal diameter in hole, described post position 506 can be fixed in fixed plate 322 top or the middle and upper part of described column 380 greater than the external diameter of described column 380 by the nut 388 of the described column 380 of coupling.
The structure of section of described upper chamber 320 is similar to section of upper chamber shown in Figure 2 substantially, but outward appearance is slightly different, please refer to shown in Figure 6.Section of described upper chamber 320 not only comprises rectangular upper cartridge body section 602, comprise multiple spot Pressure generator (not shown) in the described upper cartridge body section 602, section of described upper chamber 320 also comprises from extended second cylindrical parietal 604 on the surperficial mediad of top of described upper cartridge body section 602 simultaneously.Described the second cylindrical parietal 604 is corresponding to the first cylindrical parietal 504 in the fixed plate, but the external diameter of described the second cylindrical parietal 604 is slightly less than the internal diameter of described the first cylindrical parietal 504, when described the second cylindrical parietal 604 hold with described the first cylindrical parietal 504 after, described first substrate section 502, the first cylindrical parietal 504, the second cylindrical parietal 604 and upper cartridge body section 602 be around becoming a cavity that holds airbag 323, and described airbag 323 also is fastenedly connected with the surface of described first substrate section 502 and upper cartridge body section 602.
Be different from the fluid driver in the described multiple spot Pressure generator, the expansion of described airbag 323 and contraction provide section of described upper chamber 320 along the guiding of described column 380 and mobile actuating force, when described airbag 323 expands, because fixed plate 322 can't slide along described column 380, so section of described upper chamber 320 will be driven and move down along described column 380 by described airbag 323, in the closed position until section of described upper chamber 320 fits tightly with described lower chambers section 340.When described airbag 323 shrinks, because fixed plate 322 can't slide along described column 380, so section of described upper chamber 320 will be driven by described airbag 323 and move up along described column 380, be shown in an open position until section of described upper chamber 320 and described lower chambers section 340 are disconnected from each other.
Those skilled in the art can expect how the section of upper chamber in the described semiconductor processing device and lower chambers section change will be changeable between described off-position and described open position.For example, section of described upper chamber and described lower chambers section can adopt the flip-up style structure of similar electric baking pan and so on; Section of described upper chamber and described lower chambers section can adopt the Pop-up structure of similar CD-ROM drive opening-closing structure.The column that only adopts vertical direction take the semiconductor processing device shown in the embodiment 300 as guiding as example, section of described upper chamber and described lower chambers section slide up and down along the guiding of described column just can multiple different mode, be fixed in a certain position of described column such as section of described upper chamber, and described lower chambers section driven device drives and moves up and down under the guiding of described column; Perhaps section of described upper chamber and described lower chambers section respectively driven device drive and under the guiding of described column relative moving up and down.
Obviously, be easy to associate, an a certain position of being fixed on the described column in section of described upper chamber or the described lower chambers section is easy to realize, not only can adopts the nut fixed form among the embodiment 300, can also adopt anchor clamps or clamping close device etc.Move down along the guiding of described column and equally also be easy to realize and drive section of described upper chamber or described lower chambers section.For example the airbag type of drive among the embodiment 300 can be made as a kind of column drive unit.
Please refer to Fig. 7, it shows the explosive decomposition figure of described column drive unit in an embodiment 700.Described column drive unit 700 comprises lamina tecti 720 and bottom plate 740, described lamina tecti 720 and bottom plate 740 comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part 722 of described lamina tecti 720 is extended with side wall 724 downwards, the baseplate part 742 of described bottom plate 740 has extended upward downside wall 744, the baseplate part 722 of described lamina tecti 720, side wall 724, comprise a fluid driver 760 in the cavity that the baseplate part 722 of downside wall 744 and described bottom plate 740 surrounds, described fluid driver 760 closely is fixedly connected with the baseplate part of described lamina tecti 720 and described bottom plate 740.When being fixed in the precalculated position of described column for one in described lamina tecti 720 and the described bottom plate 740, by expansion and the contraction of described fluid driver 760, another and the coupled assembly that can drive in described lamina tecti 720 and the described bottom plate 740 move along described column.
In other words, described column drive unit 700 is arranged at described lower chambers subordinate Fang Shi, described column drive unit can be referred to as lower part driving device, described lower part driving device comprises lower lamina tecti and the cover plate of going to the bottom, described lower lamina tecti and the cover plate of going to the bottom comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of the described cover plate of going to the bottom has extended upward downside wall, the baseplate part of described lower lamina tecti, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and the described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described lower lamina tecti and the cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of the described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up along the guiding of described column by the lower chambers section of described lower lamina tecti carrying or move down.
In like manner, when described column drive unit 700 is arranged at section of described upper chamber top, described column drive unit can be referred to as upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate has extended upward downside wall, the baseplate part of described upper top cover plate, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part of described upper bottom plate one side down links to each other with section of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the section of upper chamber that links to each other with described upper bottom plate and move up or move down along described column.
The present invention provides a kind of control method of semiconductor processing device simultaneously, please refer to Fig. 8, and it shows the method flow diagram of control method in an embodiment 800 of the semiconductor processing device among the present invention.The control method 800 of described semiconductor processing device comprises:
Step 801 drives described two chamber sections and is shown in an open position;
Take semiconductor processing device shown in Figure 3 as example, can make described airbag 323 shrink, section of described upper chamber 320 will be driven by described airbag 323 and move up along described column 380, is shown in an open position until section of described upper chamber 320 and described lower chambers section 340 are disconnected from each other.
Step 802 is loaded semiconductor crystal wafer and is positioned on the described lower chambers inwall;
Utilize manual type or manipulator that semiconductor crystal wafer is positioned on the described lower chambers inwall.
Step 803, it is in the closed position to drive described two chamber sections;
Make described airbag 323 expand, section of described upper chamber 320 will be driven and move down along described column 380 by described airbag 323, and will be in the closed position until section of described upper chamber 320 fits tightly mutually with described lower chambers section 340.
Step 804 is injected the processing fluid from described entrance, so that described processing fluid is mobile along described space, and derives described processing fluid from described outlet;
Processing fluid herein typically refers to chemicals, the wet chemical etch that is used for film copper such as described semiconductor processing device, described processing fluid can comprise the mixture of hydrogen peroxide, nitric acid and hydrofluoric acid, and described processing fluid can also comprise the inert gas as the chemicals flowing carrier.Described entrance and exit can be more than one, and be arranged at any diverse location of described micro chamber section.
Step 805, at different time, deformation occurs in the corresponding region according to the predetermined policy some or a plurality of driver drives described upper chamber inwalls of control or lower chambers inwall, change so that the gap length of Fluid Flow in A is processed in confession corresponding to this regional area, and then so that described processing fluid is mobile according to predetermined pattern.
For can so that described chemicals can flow according to the flow pattern of user's expectation, can make each fluid driver according to predetermined strategy, provide actuating force in described chamber inner wall at different time and diverse location, so that the space between described chamber inner wall and the semiconductor crystal wafer changes, with the effect of the flow pattern of the chemicals that reaches the described micro chamber of control inside.
Above-mentioned explanation has fully disclosed the specific embodiment of the present invention.It is pointed out that and be familiar with the scope that any change that the person skilled in art does the specific embodiment of the present invention does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to described embodiment.
Claims (10)
1. semiconductor processing device is characterized in that it comprises:
Comprise one for the micro chamber section that holds and process semiconductor crystal wafer, described micro chamber section comprises the section of upper chamber with upper chamber's inwall and has the lower chambers section of lower chambers inwall, section of described upper chamber and lower chambers section can be used for loading or removing the open position and of semiconductor crystal wafer for mobile between the off-position of tight holding semiconductor wafer one
When off-position, semiconductor crystal wafer is installed in the cavity of described upper chamber inwall and the formation of lower chambers inwall, and and be formed with between the described cavity inner wall for the space of processing Fluid Flow in A, fluid enters entrance of described cavity and at least one is for the outlet of processing the described cavity of fluid expulsion for processing also to comprise at least one in the described micro chamber section
Also comprise a drive unit, described drive unit comprises several drivers, each driver is corresponding to the subregion of described upper chamber inwall or lower chambers inwall, and the corresponding region of described driver drives described upper chamber inwall or lower chambers inwall and the space between semiconductor crystal wafer change.
2. semiconductor processing device according to claim 1, it is characterized in that, section of described upper chamber or lower chambers section also comprise the skim elastic base plate, a surface of described thin layer elastic base plate forms described upper chamber inwall or described lower chambers inwall, and the another side of described thin layer elastic base plate and described several drivers fit.
3. semiconductor processing device according to claim 2, it is characterized in that, described driver is fluid driver, the different regional areas of the another side of described thin layer elastic base plate are fitted with described several fluid drivers respectively and are contacted, when one of them fluid driver expands, can provide to contact in described upper chamber inwall or described lower chambers inwall and point to the actuating force of described cavity inside to the corresponding region of described thin layer elastic base plate and its applying, so that cavity inner wall corresponding to this regional area forms projection; And when certain fluid driver shrinks, can provide perpendicular to described upper chamber inwall or described lower chambers inwall and point to the actuating force of described cavity outside to the corresponding region of described thin layer elastic base plate and its applying, so that cavity inner wall corresponding to this regional area forms depression.
4. semiconductor processing device according to claim 3, it is characterized in that, the size of described actuating force is relevant with the degree of described fluid driver expansion or contraction, and the direction of described actuating force is in swelling state with described fluid driver or contraction state is relevant.
5. semiconductor processing device according to claim 2, it is characterized in that, section of described upper chamber or lower chambers section also comprise box body section fixing or the described thin layer elastic base plate that links to each other, described several drivers are held in clamping in described thin layer elastic base plate and the described box body section, and described box body section provides stable support force in described each driver.
6. according to claim 1 to 5 arbitrary described semiconductor processing devices, it is characterized in that the preset width in described space is between 0.01mm and 10mm.
7. semiconductor processing device according to claim 6 is characterized in that, described semiconductor processing device also comprises to be processed fluid supply apparatus and process fluid collection device,
Described processing fluid supply apparatus is connected in the entrance that enters described cavity for the processing fluid, is used for providing the processing fluid, and
Described processing fluid collection device is connected in for the outlet of processing the described cavity of fluid expulsion, for the processing fluid behind the collection and treatment semiconductor crystal wafer,
Wherein, described processing fluid comprises chemicals and gas.
8. semiconductor processing device according to claim 7, it is characterized in that, the edge of section of described upper chamber and lower chambers section comprises corresponding hole, post position, and section of described upper chamber and described lower chambers section can be along being used between the off-position of tight holding semiconductor wafer mobile at an open position and that is used for loading or remove semiconductor crystal wafer under the guiding of the column that runs through hole, described post position.
9. semiconductor processing device according to claim 7 is characterized in that, in section of described upper chamber and the described lower chambers section one is fixed in the precalculated position of described column and can't moves along described column,
When section of described upper chamber is fixed, the below of described lower chambers section also comprises lower part driving device, described lower part driving device comprises lower lamina tecti and the cover plate of going to the bottom, described lower lamina tecti and the cover plate of going to the bottom comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described lower lamina tecti is extended with side wall downwards, the baseplate part of the described cover plate of going to the bottom has extended upward downside wall, the baseplate part of described lower lamina tecti, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and the described cover plate of going to the bottom surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described lower lamina tecti and the cover plate of going to the bottom is formed with corresponding hole, post position, the baseplate part of the described cover plate of going to the bottom and the precalculated position of described column are fixed, by expansion and the contraction of described fluid driver, drive described lower lamina tecti and moved up along the guiding of described column by the lower chambers section of described lower lamina tecti carrying or move down;
When described lower chambers section is fixed, the top of section of described upper chamber also comprises upper drive mechanism, described upper drive mechanism comprises upper top cover plate and upper bottom plate, described upper top cover plate and upper bottom plate comprise respectively the baseplate part of correspondingly-shaped, and the baseplate part of described upper top cover plate is extended with side wall downwards, the baseplate part of described upper bottom plate has extended upward downside wall, the baseplate part of described upper top cover plate, side wall, comprise a fluid driver in the cavity that the baseplate part of downside wall and described upper bottom plate surrounds, the baseplate part of described fluid driver and described lower lamina tecti and the described cover plate of going to the bottom is fixedly linked
The baseplate part edge of described upper top cover plate and upper bottom plate is formed with corresponding hole, post position, the baseplate part of described upper top cover plate and the precalculated position of described column are fixed, the baseplate part of described upper bottom plate one side down links to each other with section of described upper chamber, by expansion and the contraction of described fluid driver, drive described upper bottom plate and the section of upper chamber that links to each other with described upper bottom plate plate and move up or move down along described column.
10. the control method of a semiconductor processing device is applicable to semiconductor processing device claimed in claim 1, it is characterized in that it comprises:
Driving described two chamber sections is shown in an open position;
Loading semiconductor crystal wafer is positioned on the described lower chambers inwall;
It is in the closed position to drive described two chamber sections;
Inject the processing fluid from described entrance, so that described processing fluid is mobile along described space, and derive described processing fluid from described outlet;
At different time, deformation occurs in the corresponding region according to the predetermined policy some or a plurality of driver drives described upper chamber inwalls of control or lower chambers inwall, change so that the gap length of Fluid Flow in A is processed in confession corresponding to this regional area, and then so that described processing fluid is mobile according to predetermined pattern.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110215819.6A CN102903605B (en) | 2011-07-29 | 2011-07-29 | Semiconductor processing device and control method |
| US14/363,286 US10283389B2 (en) | 2011-07-29 | 2011-12-30 | Adjustable semiconductor processing device and control method thereof |
| PCT/CN2011/085065 WO2013016941A1 (en) | 2011-07-29 | 2011-12-30 | Adjustable semiconductor processing device and control method thereof |
| TW101121716A TWI469201B (en) | 2011-07-29 | 2012-06-18 | Adjustable semiconductor processing device and operating method thereof |
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| CN201110215819.6A CN102903605B (en) | 2011-07-29 | 2011-07-29 | Semiconductor processing device and control method |
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| CN102903605B CN102903605B (en) | 2015-03-18 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108426978A (en) * | 2017-02-14 | 2018-08-21 | 无锡华瑛微电子技术有限公司 | Wafer local processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997014178A1 (en) * | 1995-10-13 | 1997-04-17 | Ziying Wen | Method and apparatus for chemical processing semiconductor wafers |
| CN1121057C (en) * | 1996-06-05 | 2003-09-10 | 兰姆研究公司 | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US20040253747A1 (en) * | 2003-06-13 | 2004-12-16 | Sophia Wen | Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers |
-
2011
- 2011-07-29 CN CN201110215819.6A patent/CN102903605B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997014178A1 (en) * | 1995-10-13 | 1997-04-17 | Ziying Wen | Method and apparatus for chemical processing semiconductor wafers |
| CN1121057C (en) * | 1996-06-05 | 2003-09-10 | 兰姆研究公司 | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US20040253747A1 (en) * | 2003-06-13 | 2004-12-16 | Sophia Wen | Method and apparatus for dynamic thin-layer chemical processing of semiconductor wafers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108426978A (en) * | 2017-02-14 | 2018-08-21 | 无锡华瑛微电子技术有限公司 | Wafer local processing method |
| CN108426978B (en) * | 2017-02-14 | 2021-01-01 | 无锡华瑛微电子技术有限公司 | Local processing method for wafer |
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