CN102898004A - 金属和石墨模具以及制造坩埚的方法 - Google Patents
金属和石墨模具以及制造坩埚的方法 Download PDFInfo
- Publication number
- CN102898004A CN102898004A CN2012103239532A CN201210323953A CN102898004A CN 102898004 A CN102898004 A CN 102898004A CN 2012103239532 A CN2012103239532 A CN 2012103239532A CN 201210323953 A CN201210323953 A CN 201210323953A CN 102898004 A CN102898004 A CN 102898004A
- Authority
- CN
- China
- Prior art keywords
- hole
- liner
- tank
- graphite
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/189,897 US9216923B2 (en) | 2011-07-25 | 2011-07-25 | Metal and graphite mold and method of making a crucible |
US13/189897 | 2011-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102898004A true CN102898004A (zh) | 2013-01-30 |
CN102898004B CN102898004B (zh) | 2017-03-01 |
Family
ID=46679125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210323953.2A Active CN102898004B (zh) | 2011-07-25 | 2012-07-24 | 金属和石墨模具以及制造坩埚的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9216923B2 (zh) |
EP (1) | EP2551246B1 (zh) |
JP (1) | JP6077234B2 (zh) |
KR (1) | KR101832876B1 (zh) |
CN (1) | CN102898004B (zh) |
TW (1) | TWI519493B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104402204A (zh) * | 2014-11-24 | 2015-03-11 | 许昌天戈硅业科技有限公司 | 一种石英坩埚成型模具 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3015574B1 (en) * | 2013-06-29 | 2018-03-21 | Sumco Corporation | Silicon single crystal pulling method |
DE102022207253A1 (de) * | 2022-07-15 | 2024-01-18 | Sms Group Gmbh | Verfahren zum Beheizen, Trocknen und/oder Sintern eines metallurgischen Gefäßes und Anordnung hierzu |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020166341A1 (en) * | 1994-11-15 | 2002-11-14 | Shelley Robert D. | Technique for quartz crucible fabrication having reduced bubble content in the wall |
TW200712018A (en) * | 2005-09-08 | 2007-04-01 | Heraeus Shin Etsu America Inc | Silica glass crucible with bubble-free and reduced bubble growth wall |
CN201722278U (zh) * | 2010-05-19 | 2011-01-26 | 杭州大和热磁电子有限公司 | 新型加工石英坩埚的金属模具 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4632686A (en) * | 1986-02-24 | 1986-12-30 | Gte Products Corporation | Method of manufacturing quartz glass crucibles with low bubble content |
US4963178A (en) * | 1986-03-31 | 1990-10-16 | Gte Products Corporation | Apparatus for making quartz glass crucibles |
JP4285788B2 (ja) * | 1996-03-14 | 2009-06-24 | 信越石英株式会社 | 単結晶引き上げ用大口径石英るつぼの製造方法 |
US6136094A (en) * | 1996-06-27 | 2000-10-24 | Toyo Tanso Co., Ltd. | Crucible for crystal pulling and method of manufacturing same |
JP3807785B2 (ja) * | 1996-07-09 | 2006-08-09 | 東洋炭素株式会社 | 石英ルツボ製造用中空型 |
JP3789235B2 (ja) * | 1998-09-03 | 2006-06-21 | 東芝セラミックス株式会社 | 石英ガラスルツボ製造装置 |
JP2002003228A (ja) * | 2000-06-19 | 2002-01-09 | Toshiba Ceramics Co Ltd | 石英ガラスルツボ製造装置 |
US20050120945A1 (en) * | 2003-12-03 | 2005-06-09 | General Electric Company | Quartz crucibles having reduced bubble content and method of making thereof |
US7556764B2 (en) * | 2005-11-09 | 2009-07-07 | Heraeus Shin-Etsu America, Inc. | Silica vessel with nozzle and method of making |
JP4994647B2 (ja) * | 2005-11-30 | 2012-08-08 | ジャパンスーパークォーツ株式会社 | 結晶化し易い石英ガラス部材とその用途 |
US7993556B2 (en) * | 2007-08-08 | 2011-08-09 | Heraeus Shin-Etsu America, Inc. | Method for making a silica glass crucible |
JP4918473B2 (ja) * | 2007-12-14 | 2012-04-18 | ジャパンスーパークォーツ株式会社 | 高強度を有する大径シリコン単結晶インゴット引上げ用高純度石英ガラスルツボ |
JP5441106B2 (ja) * | 2008-06-28 | 2014-03-12 | 株式会社Sumco | 水冷モールド |
US8272234B2 (en) * | 2008-12-19 | 2012-09-25 | Heraeus Shin-Etsu America, Inc. | Silica crucible with pure and bubble free inner crucible layer and method of making the same |
US8420191B2 (en) * | 2009-04-28 | 2013-04-16 | Shin-Etsu Quartz Products Co., Ltd. | Silica container and method for producing the same |
-
2011
- 2011-07-25 US US13/189,897 patent/US9216923B2/en active Active
-
2012
- 2012-06-18 TW TW101121766A patent/TWI519493B/zh active
- 2012-07-19 JP JP2012160187A patent/JP6077234B2/ja active Active
- 2012-07-19 KR KR1020120078617A patent/KR101832876B1/ko active IP Right Grant
- 2012-07-24 CN CN201210323953.2A patent/CN102898004B/zh active Active
- 2012-07-25 EP EP12177797.3A patent/EP2551246B1/en not_active Not-in-force
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020166341A1 (en) * | 1994-11-15 | 2002-11-14 | Shelley Robert D. | Technique for quartz crucible fabrication having reduced bubble content in the wall |
TW200712018A (en) * | 2005-09-08 | 2007-04-01 | Heraeus Shin Etsu America Inc | Silica glass crucible with bubble-free and reduced bubble growth wall |
CN201722278U (zh) * | 2010-05-19 | 2011-01-26 | 杭州大和热磁电子有限公司 | 新型加工石英坩埚的金属模具 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104402204A (zh) * | 2014-11-24 | 2015-03-11 | 许昌天戈硅业科技有限公司 | 一种石英坩埚成型模具 |
Also Published As
Publication number | Publication date |
---|---|
EP2551246B1 (en) | 2019-03-13 |
JP6077234B2 (ja) | 2017-02-08 |
JP2013023432A (ja) | 2013-02-04 |
US20130025319A1 (en) | 2013-01-31 |
TWI519493B (zh) | 2016-02-01 |
KR101832876B1 (ko) | 2018-02-27 |
EP2551246A3 (en) | 2017-05-03 |
EP2551246A2 (en) | 2013-01-30 |
CN102898004B (zh) | 2017-03-01 |
TW201307219A (zh) | 2013-02-16 |
KR20130012555A (ko) | 2013-02-04 |
US9216923B2 (en) | 2015-12-22 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHINETSU QUARTZ PROD Free format text: FORMER OWNER: HERAEUS SHIN ETSU AMERICA INC. Effective date: 20150729 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150729 Address after: Hanau Applicant after: Heraeus Quarzglas GmbH & Co. KG Applicant after: Shinetsu Quartz Prod Address before: Hanau Applicant before: Heraeus Quarzglas GmbH & Co. KG Applicant before: Heraeus Shin Etsu America Inc. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220523 Address after: Tokyo, Japan Patentee after: SHIN-ETSU QUARTZ PRODUCTS CO.,LTD. Address before: Hanau Patentee before: HERAEUS QUARZGLAS GmbH & Co.KG Patentee before: SHIN-ETSU QUARTZ PRODUCTS CO.,LTD. |
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TR01 | Transfer of patent right |