CN102856366A - 一种增强型器件 - Google Patents
一种增强型器件 Download PDFInfo
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- CN102856366A CN102856366A CN2012103221702A CN201210322170A CN102856366A CN 102856366 A CN102856366 A CN 102856366A CN 2012103221702 A CN2012103221702 A CN 2012103221702A CN 201210322170 A CN201210322170 A CN 201210322170A CN 102856366 A CN102856366 A CN 102856366A
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- nitride
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- 150000004767 nitrides Chemical class 0.000 claims abstract description 106
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 18
- 229910002601 GaN Inorganic materials 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 34
- 230000004888 barrier function Effects 0.000 claims description 31
- 238000010276 construction Methods 0.000 claims description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 29
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 15
- 229910017083 AlN Inorganic materials 0.000 claims description 14
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910017109 AlON Inorganic materials 0.000 claims description 4
- 229910004140 HfO Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 12
- 230000010287 polarization Effects 0.000 abstract description 7
- 230000002269 spontaneous effect Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000012010 growth Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical group 0.000 description 1
- -1 fluorine ion Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN2012103221702A CN102856366A (zh) | 2012-09-04 | 2012-09-04 | 一种增强型器件 |
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CN2012103221702A CN102856366A (zh) | 2012-09-04 | 2012-09-04 | 一种增强型器件 |
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CN2012103221702A Pending CN102856366A (zh) | 2012-09-04 | 2012-09-04 | 一种增强型器件 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103618003A (zh) * | 2013-11-18 | 2014-03-05 | 石以瑄 | 具有改良栅极的高电子迁移率晶体管 |
CN104377240A (zh) * | 2013-08-15 | 2015-02-25 | 瑞萨电子株式会社 | 半导体器件和制造半导体器件的方法 |
CN104992973A (zh) * | 2015-05-21 | 2015-10-21 | 西南交通大学 | 一种围栅异质结器件 |
CN105140280A (zh) * | 2015-07-27 | 2015-12-09 | 西南交通大学 | 一种具有常关沟道的高压多异质结器件 |
CN105405877A (zh) * | 2014-09-05 | 2016-03-16 | 英飞凌科技奥地利有限公司 | 具有埋置场板的高电子迁移率晶体管 |
CN105448960A (zh) * | 2014-09-18 | 2016-03-30 | 英飞凌科技奥地利有限公司 | 非平坦常关型化合物半导体器件 |
WO2023279524A1 (zh) * | 2021-07-09 | 2023-01-12 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制作方法 |
CN116314282A (zh) * | 2023-05-25 | 2023-06-23 | 北京大学 | 一种增强型氮化镓基电子器件及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110041550A (ko) * | 2008-07-31 | 2011-04-21 | 크리, 인코포레이티드 | 노멀리-오프형 반도체 디바이스 및 그 제조 방법 |
CN102130160A (zh) * | 2011-01-06 | 2011-07-20 | 西安电子科技大学 | 槽形沟道AlGaN/GaN增强型HEMT器件及制作方法 |
CN102332469A (zh) * | 2011-09-22 | 2012-01-25 | 中山大学 | 纵向导通的GaN常关型MISFET器件及其制作方法 |
CN102386223A (zh) * | 2011-11-01 | 2012-03-21 | 中山大学 | GaN高阈值电压增强型MOSHFET器件及制备方法 |
-
2012
- 2012-09-04 CN CN2012103221702A patent/CN102856366A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110041550A (ko) * | 2008-07-31 | 2011-04-21 | 크리, 인코포레이티드 | 노멀리-오프형 반도체 디바이스 및 그 제조 방법 |
CN102130160A (zh) * | 2011-01-06 | 2011-07-20 | 西安电子科技大学 | 槽形沟道AlGaN/GaN增强型HEMT器件及制作方法 |
CN102332469A (zh) * | 2011-09-22 | 2012-01-25 | 中山大学 | 纵向导通的GaN常关型MISFET器件及其制作方法 |
CN102386223A (zh) * | 2011-11-01 | 2012-03-21 | 中山大学 | GaN高阈值电压增强型MOSHFET器件及制备方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377240B (zh) * | 2013-08-15 | 2019-11-22 | 瑞萨电子株式会社 | 半导体器件和制造半导体器件的方法 |
CN104377240A (zh) * | 2013-08-15 | 2015-02-25 | 瑞萨电子株式会社 | 半导体器件和制造半导体器件的方法 |
CN103618003B (zh) * | 2013-11-18 | 2017-04-12 | 石以瑄 | 具有改良栅极的高电子迁移率晶体管 |
CN103618003A (zh) * | 2013-11-18 | 2014-03-05 | 石以瑄 | 具有改良栅极的高电子迁移率晶体管 |
CN105405877A (zh) * | 2014-09-05 | 2016-03-16 | 英飞凌科技奥地利有限公司 | 具有埋置场板的高电子迁移率晶体管 |
US11114554B2 (en) | 2014-09-05 | 2021-09-07 | Infineon Technologies Austria Ag | High-electron-mobility transistor having a buried field plate |
CN105448960A (zh) * | 2014-09-18 | 2016-03-30 | 英飞凌科技奥地利有限公司 | 非平坦常关型化合物半导体器件 |
US10090406B2 (en) | 2014-09-18 | 2018-10-02 | Infineon Technologies Austria Ag | Non-planar normally off compound semiconductor device |
CN104992973A (zh) * | 2015-05-21 | 2015-10-21 | 西南交通大学 | 一种围栅异质结器件 |
CN105140280A (zh) * | 2015-07-27 | 2015-12-09 | 西南交通大学 | 一种具有常关沟道的高压多异质结器件 |
CN105140280B (zh) * | 2015-07-27 | 2017-12-01 | 西南交通大学 | 一种具有常关沟道的高压多异质结器件 |
WO2023279524A1 (zh) * | 2021-07-09 | 2023-01-12 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制作方法 |
CN116314282A (zh) * | 2023-05-25 | 2023-06-23 | 北京大学 | 一种增强型氮化镓基电子器件及其制备方法 |
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