CN102832146A - IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation - Google Patents

IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation Download PDF

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CN102832146A
CN102832146A CN 201210327132 CN201210327132A CN102832146A CN 102832146 A CN102832146 A CN 102832146A CN 201210327132 CN201210327132 CN 201210327132 CN 201210327132 A CN201210327132 A CN 201210327132A CN 102832146 A CN102832146 A CN 102832146A
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chip
step
igbt
module
substrate
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CN 201210327132
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Chinese (zh)
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吕新立
关仕汉
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淄博美林电子有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]

Abstract

The invention discloses an IGBT (insulated gate bipolar translator) module packaging process and an IGBT module with bidirectional heat radiation, belonging to the technical field of semiconductor device manufacturing. The process comprises the following steps: step 1.1, implanting a metal ball (2) on a chip (4); step 1.2, covering bad chips and cutting the chip; step 1.3, welding a lower substrate (6) with crystalline grains in a vacuum mode; step 1.4, welding an upper substrate (3) with the chip; step 1.5 welding the upper substrate with an upper heat radiation fin (1); and step 1.6, welding pole piece terminals, molding a shell and printing words on the shell, injecting silica gel, testing and packaging. The process has the advantages that by adopting the chip metal implanted ball technique, the damage to the chip is reduced as no metal line is used, and with the adoption of the IGBT module manufactured by using the advanced process, the heat radiation of a product is increased by additionally arranging the heat radiation fin externally, and the module efficiency and the pass percent are increased, etc.

Description

一种IGBT模块封装工艺及双向散热的IGBT模块 IGBT module package and one kind of bi-directional cooling process IGBT module

技术领域 FIELD

[0001] 一种IGBT模块封装工艺及双向散热的IGBT模块,属于半导体器件制造技术领域,具体涉及一种新型NOW PAK IGBT (绝缘栅双极性晶体管)模块及封装工艺。 [0001] A bi-directional IGBT module packaging technology and heat dissipation IGBT module, belongs to the technical field of manufacturing a semiconductor device, particularly relates to a novel NOW PAK IGBT (Insulated Gate Bipolar Transistor) modules and packaging process. 背景技术 Background technique

[0002] 如图9所示,传统绝缘栅双极性晶体管IGBT模块封装均采用打金属线7的方式进行芯片的并联、串联以达到提闻I旲块电流电压的目的,此方法对于大功率IGBT芯片极易造成损伤(芯片面积较大,打线条数多,如芯片焊接稍有不平整即会损伤芯片),且芯片上部无法接散热片,散热效果差。 [0002] As shown in FIG. 9, a conventional insulated gate bipolar transistor (IGBT) module package are hit by way of the metal wire 7 chips in parallel, in series to achieve the object mentioned smell I Dae block current and voltage, this method for high-power IGBT chips can easily cause damage (large chip area, the number of lines of a multi-play, such as die bonding is slightly uneven i.e. can damage the chip), the chip can not be connected and the upper fin, the heat dissipation effect poor. 在使用时容易因温度升高造成产品失效。 When using vulnerable to temperature rise caused by product failure.

发明内容 SUMMARY

[0003] 本发明要解决的技术问题是:克服现有技术的不足,不用传统打线方式防止对芯片造成的损伤;制作出的产品散热效果好、能够提升芯片效率和良率的IGBT模块封装工艺及IGBT模块。 [0003] The present invention is to solve the technical problem: to overcome the deficiencies of the prior art, without using a conventional manner to prevent damage to the wire caused by the chip; to produce a good cooling effect of the product, it is possible to enhance the efficiency and yield of a chip packaging process IGBT module and IGBT module.

[0004] 本发明解决其技术问题所采用的技术方案是:该一种IGBT模块封装工艺,其特征在于:包括如下步骤: [0004] aspect of the present invention to solve the technical problem is that: the one IGBT module packaging process, characterized by: comprising the steps of:

[0005] 步骤I. I :在芯片上植入金属球; [0005] Step I. I: implanting metal ball on the chip;

[0006] 步骤I. 2 :不良芯片覆盖及切割芯片; [0006] Step I. 2: poor chip and chip cut cover;

[0007] 步骤I. 3 :下基板与晶粒真空焊接; [0007] Step I. 3: vacuum brazing lower substrate grains;

[0008] 步骤I. 4 :在上基板上方焊接好电路板后再焊接上散热片; [0008] Step I. 4: soldered on a substrate circuit board and soldered well above the heat sink;

[0009] 步骤I. 5 :极片端子焊接,外壳成型及印字、硅胶注入、测试,包装。 [0009] Step I. 5: terminal welding pole piece, shell molding and printing, silica gel injection, testing, packaging.

[0010] 采用上述权利要求I所述的工艺制作的双向散热的IGBT模块,其特征在于:在芯片上植入金属球,金属球直接将芯片与带有线路的上基板连接,在上基板上方设置散热装置。 [0010] With the above production process as claimed in claim I heat the bidirectional IGBT module, wherein: the chip implanted metal balls, metal balls directly connecting the chip to the substrate with a line, over the upper substrate heat dissipating means.

[0011] 散热装置包括上基板和其上方的上散热片。 [0011] The heat dissipation device comprises a heat sink substrate and above it.

[0012] 上基板和下基板均为陶瓷覆铜板。 [0012] The upper and lower substrates are DCB. 中间的陶瓷为绝缘层所以可以外加上散热片。 Ceramic intermediate insulating layer can be combined with an outer heat sink.

[0013] 上散热片为翅片状。 [0013] as a fin-shaped heat sinks. 提闻广品的散热能力。 Wen mentioned cooling capacity wide product. 提闻|旲块使用寿命。 Mention smell | Dae block of life.

[0014] 金属球的材料使用金、锡或银中的一种,金属球单颗直径12_15mil。 [0014] Materials used metal balls of gold, silver, tin, or a metallic ball diameter single 12_15mil.

[0015] 与现有技术相比,本发明的一种IGBT模块封装工艺及双向散热的IGBT模块的有益效果是:本发明取消使用打金属线的方式对芯片进行并联、串联,采用芯片植球技术直接使用带有线路的上基板实现芯片的并联及串联,同时因上基板采用陶瓷覆铜板,中间或背面的陶瓷为绝缘层所以可以外加上散热片,增加散热效果提高IGBT模块的散热能力和使用寿命。 [0015] Compared with the prior art, the beneficial effects of one kind of bi-directional IGBT module packaging technology and heat dissipation of the IGBT module according to the present invention: The present invention eliminates the use of metal wire playing manner chip in parallel, series, using chip bumping technique directly on the substrate and connected in parallel with the series circuit of the chip to achieve the same time because DCB ceramic substrate, or the back surface of the intermediate insulating layer can be coupled with the outer heat sink, the ability to increase the cooling effect of improving the heat dissipation of the IGBT module and life. 避免产生如图9所示打金属线对芯片造成损伤的问题。 Avoid problems hit the metal wire 9 to damage the chip.

[0016] I、采用芯片金属植球技术,不用打金属线减少打线对芯片的损伤,不用传统打线方式而用金属植球直接将芯片与带有线路的上基板连接,提升芯片效率15%,芯片效率达到95%以上,IGBT模块良率可以提高10%。 [0016] I, using a metal chip bumping technology, do not hit the metal wire lines to reduce the damage of the chip, not a conventional manner with a metal wire bumping directly connecting the chip to the substrate with a line, to enhance the efficiency of the chip 15 %, chip efficiency is more than 95%, IGBT module yield can be increased by 10%. [0017] 2、本发明的IGBT的上基板上可外加上散热片提闻广品的散热能力,下基板可外加水冷式散热装置,有效达到散热能力,散热能力提高20%以上。 [0017] 2, may be coupled with the outer upper substrate of the present invention, IGBT fins provide cooling capacity smell wide product, the substrate may be applied to the water-cooled heat sink, to achieve effective cooling capacity, the cooling capacity increased by 20%.

[0018] 3、金属球的材料使用金、锡、银,植球单颗直径12mil到15mil之间。 [0018] 3, a metal material of gold balls, tin, silver, bumping between single diameter 12mil 15mil.

[0019] 4、本发明亦适用于其它功率模块的封装流程。 [0019] 4, the present invention is also applicable to other power module packaging process.

[0020] 克服了现有技术,对于大功率IGBT芯片极易造成损伤(芯片面积较大,打线条数多,如芯片焊接稍有不平整即会损伤芯片),且芯片上部无法接散热片,散热效果差。 [0020] overcomes the prior art, for high-power IGBT chips can easily cause damage (large chip area, the number of lines of a multi-play, such as die bonding is slightly uneven i.e. can damage the chip), the chip can not be connected and the upper heat sink, poor heat dissipation. 在使用时容易因温度升高造成产品失效等缺点。 When using vulnerable to temperature rise caused by product failure and other shortcomings.

附图说明 BRIEF DESCRIPTION

[0021] 图I是本发明IGBT模块的工艺流程图; [0021] Figure I is a process flow diagram illustrating an IGBT module according to the present invention;

[0022] 图2是本发明IGBT模块的结构示意图; [0023] 图3是图2的I局部放大示意图; [0022] FIG. 2 is a schematic view of the IGBT module according to the present invention; [0023] FIG. 3 is a partially enlarged view of I 2;

[0024] 图4是芯片未植入金属球结构不意图; [0024] FIG. 4 is a metal ball non-implanted chip structure is not intended;

[0025] 图5是芯片植入金属球结构示意图; [0025] FIG. 5 is a schematic structural chip implanted metal ball;

[0026] 图6是芯片与下基板6焊接结构不意图; [0026] FIG. 6 is a welded structure of the chip 6 and the lower substrate are not intended;

[0027] 图7是芯片与上基板3焊接结构示意图; [0027] FIG. 7 is a schematic view of the welding die 3 and the upper substrate;

[0028] 图8是上基板3外焊接上散热片I结构示意图; [0028] FIG. 8 is a schematic view of welding on the substrate 3 on the outer fin structure I;

[0029] 图9是现有技术打线图。 [0029] FIG. 9 is a prior art wire FIG.

[0030] 其中:1、上散热片2、金属球3、上基板4、芯片5、下散热板6、下基板7、金属线。 [0030] wherein: 1, the heat sink 2, the metal balls 3, 4 on the substrate, the chip 5, the heat radiating plate 6, the substrate 7, the metal wire. 具体实施方式 detailed description

[0031] 图1-3、5_8是本发明IGBT模块封装工艺及IGBT模块的最佳实施例,下面结合附图I〜8对本发明做进一步说明。 [0031] FIG 1-3,5_8 is a preferred embodiment of the IGBT module and IGBT module packaging process of the present invention, in conjunction with the accompanying drawings I~8 further illustrate the present invention.

[0032] 参照附图1-8 : [0032] Referring to the drawings 1-8:

[0033] 本发明的IGBT模块由上散热片I、金属球2、上基板3、芯片4、下散热板5和下基板6组成,在芯片4上植入金属球2,金属球2直接将芯片4与带有线路的上基板3连接,在金属球2上方设置散热装置。 [0033] IGBT module of the present invention consists of a heat sink I, a metal ball 2, on the substrate 3, the chip 4, the radiator plate 5 and the lower substrate 6 composed implanted metal ball on the chip 42, directly to the metal ball 2 chip 43 is connected with a line on a substrate, a heat sink disposed over the metal ball 2. 散热装置包括上基板3和其上方的上散热片I。 The heat dissipation device comprises a heat sink 3 and the upper substrate thereabove I. 上基板3和下基板6均为陶瓷覆铜板。 3 the upper substrate and the lower substrate 6 are DCB. 上散热片I为翅片状。 I is a fin-shaped heat sink.

[0034] 参照附图4和图5: [0034] Referring to figures 4 and 5:

[0035] 图4是现有技术未植入金属球2的芯片。 [0035] FIG 4 is a prior art non-implanted metal ball chip 2.

[0036] 图5是植入金属球2的芯片。 [0036] FIG. 5 is a metal ball chip 2 is implanted. 金属球2材料使用金、锡、银,植球单颗直径12mil到15mil之间。 Metallic materials ball 2 gold, tin, silver, bumping between single diameter 12mil 15mil. 如图5所示将成排的金属球2间隔均布植入芯片4上,植满整个芯片4。 2 shown in the rows of spacer 5 metal balls uniform implantable chip 4, over the entire chip 4 explants. 实现将芯片4与带有线路的上基板3的直接连接。 4 to achieve the direct connection to the chips on the substrate with the line 3.

[0037] 该IGBT模块封装工艺,包括如下步骤: [0037] The IGBT module packaging process, comprising the steps of:

[0038] 步骤I. I :在芯片4上植入金属球2 ; [0038] Step I. I: 2 implanted metal ball on the chip 4;

[0039] 步骤I. 2 :不良芯片覆盖及切割芯片; [0039] Step I. 2: poor chip and chip cut cover;

[0040] 步骤I. 3 :下基板6与晶粒真空焊接; [0040] Step I. 3: the lower substrate 6 and the vacuum welding die;

[0041] 步骤I. 4 :在上基板3上方焊接好电路板后再焊接上散热片I ; [0041] Step I. 4: 3 on the substrate soldered circuit board and soldered well above the heat sink I;

[0042] 步骤I. 5 :极片端子焊接,外壳成型及印字、硅胶注入、测试,包装。 [0042] Step I. 5: terminal welding pole piece, shell molding and printing, silica gel injection, testing, packaging. [0043] 工作原理与工作过程如下: [0043] works and works as follows:

[0044] 本发明在IGBT模块的制作中,首先对芯片4植入金属球2,将下散热板5、下基板6与植入金属球2的芯片4使用真空焊接炉焊接到一起,取消使用金属线7,金属球2直接将芯片4与带有线路的上基板3连接,避免了打线对芯片4造成的损伤,并可以在上基板3上外加上散热片I增强模块的散热效果,然后再焊接上端子盖上外壳注入硅胶,测试后包装即完成整个NOW PAK IGBT模块封装的流程,使用本技术制作的IGBT模块良率可以提高10%,散热能力提高20%。 [0044] In the production of the IGBT module according to the present invention, first the implant 4 metal ball chip 2, the lower radiator plate 5, the lower substrate 6 and the implant 4 metal ball chip using vacuum soldering furnace 2 welded together, eliminate the use of 7 a metal wire, a metal ball 2 is directly connected to the chip 43 on the substrate with the line, to avoid damage to the wire caused by the chip 4 and can add an outer fins improve the heat transfer module I on the upper substrate 3, then welding a terminal housing cover silicone injection, i.e., after the test to complete the packaging NOW PAK IGBT module encapsulation process, using techniques fabricated IGBT module yield can be increased by 10%, the cooling capacity increased by 20%.

[0045] 本发明主要解决IGBT模块封装中打金属线对芯片造成损伤,及散热性差的问题。 [0045] The present invention to solve the IGBT module package hit the metal wire damage, and heat dissipation problem of poor chip. 本发明把连接芯片4的金属丝改为带有线路结构的上基板3结构,消除了打线对芯片4造成的损伤。 The chip of the present invention is connected to the wire 4 in the structure 3 on the substrate with a line structure, eliminating the damage to the wire caused by the chip 4. 而保持原IGBT模块的工作原理及电性功能,因为上基板3采用铜-陶瓷-铜的三层结构陶瓷覆铜板,中间的陶瓷为绝缘层所以可以外加上散热片1,增加散热效果提高模块使用寿命。 While maintaining the original principle of the IGBT module and the electrical function, since the upper substrate 3 made of copper - copper DCB layer structure, the intermediate insulating ceramic outer layer can be coupled with a fin to increase the cooling effect of improving Module - Ceramic life. 上基板还可以根据设计需要,采用铜-陶瓷两层结构的陶瓷覆铜板,具有单面导电背面绝缘。 The substrate may also be depending on design requirements, the use of copper - DCB ceramic two-layer structure, having a single-sided conductive back surface insulating. 仍然可以外加上散热片1,实现增加散热效果提高模块使用寿命的目的。 Outer fins can still add 1, to achieve the purpose of improving heat dissipation effect increases the life of the module.

[0046] 以上所述,仅是本发明的较佳实施例而已,并非是对本发明作其它形式的限制,任何熟悉本专业的技术人员可能利用上述揭示的技术内容加以变更或改型为等同变化的等效实施例。 [0046] The above are only preferred embodiments of the present invention only, not other forms of the present invention will be limited, and any skilled skilled in the art using the disclosed techniques may be changed or modified to content equivalent variations equally effective embodiments. 但是凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与改型,仍属于本发明技术方案的保护范围。 However, all without departing from the technical contents of the present invention, any simple modification based on the technical essence of the present invention is made to the above embodiment embodiment, the equivalent changes and modifications still fall within the scope of the technical solutions of the present invention.

Claims (6)

  1. 1. 一种IGBT模块封装工艺,其特征在于:包括如下步骤: 步骤I. I :在芯片(4)上植入金属球(2); 步骤I. 2 :不良芯片覆盖及切割芯片; 步骤I. 3 :下基板(6)与晶粒真空焊接; 步骤I. 4 :在上基板(3)上方焊接好电路板后再焊接上散热片(I); 步骤I. 5 :极片端子焊接,外壳成型及印字、硅胶注入、测试,包装。 An IGBT module packaging process, characterized by: comprising the following steps: I. Step I: chip implanted in the metal ball (4) (2); I. Step 2: poor coverage and cutting die chips; Step I 3: a lower substrate (6) and the vacuum welding die; step I. 4: in (3) above the weld good board and soldered on the circuit board on the heat sink (the I); step I. 5: electrode terminal welding sheet, and printing shell molding, injection silica gel, testing, packaging.
  2. 2. 一种采用权利要求I所述的工艺制作的双向散热的IGBT模块,其特征在于:在芯片(4)上植入金属球(2),金属球(2)直接将芯片与带有线路的上基板(3)连接,在上基板(3)上方设置散热装置。 Production process using I according to claim 2. A heat bidirectional IGBT module, characterized in that: the implant a metal ball (2) on the chip (4), metal balls (2) directly with the chip line the upper substrate (3) is connected over the upper substrate (3) is provided a heat sink.
  3. 3.根据权利要求2所述的双向散热的IGBT模块,其特征在于:散热装置包括上基板(3)和其上方的上散热片(I)。 3. The bi-directional heat dissipating module according to claim 2 IGBT, characterized in that: the heat dissipating means comprises a heat sink (I) on a substrate (3) and above it.
  4. 4.根据权利要求3所述的双向散热的IGBT模块,其特征在于:上基板(3)和下基板(6)均为陶瓷覆铜板。 Cooling bidirectional IGBT module according to claim 3, wherein: the substrate (3) and a lower substrate (6) are DCB.
  5. 5.根据权利要求3所述的双向散热的IGBT模块,其特征在于:上散热片(I)为翅片状。 The bi-directional heat dissipation module according to claim 3 IGBT, wherein: the heat sink (I) is fin-shaped.
  6. 6.根据权利要求2所述的双向散热的IGBT模块,其特征在于:金属球(2)的材料使用金、锡或银中的一种,金属球(2)单颗直径12-15mil。 The bi-directional cooling the IGBT module according to claim 2, wherein: a metal ball (2) material of gold, silver, tin, or a metallic ball (2) diameter single 12-15mil.
CN 201210327132 2012-09-06 2012-09-06 IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation CN102832146A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2591772Y (en) * 2002-12-26 2003-12-10 威盛电子股份有限公司 Chip package structure
US6724078B1 (en) * 2000-08-31 2004-04-20 Intel Corporation Electronic assembly comprising solderable thermal interface
US20040080041A1 (en) * 2002-10-21 2004-04-29 Nec Electronics Corporation Semiconductor device with improved heatsink structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724078B1 (en) * 2000-08-31 2004-04-20 Intel Corporation Electronic assembly comprising solderable thermal interface
US20040080041A1 (en) * 2002-10-21 2004-04-29 Nec Electronics Corporation Semiconductor device with improved heatsink structure
CN2591772Y (en) * 2002-12-26 2003-12-10 威盛电子股份有限公司 Chip package structure

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