CN102832146A - IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation - Google Patents
IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation Download PDFInfo
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- CN102832146A CN102832146A CN2012103271326A CN201210327132A CN102832146A CN 102832146 A CN102832146 A CN 102832146A CN 2012103271326 A CN2012103271326 A CN 2012103271326A CN 201210327132 A CN201210327132 A CN 201210327132A CN 102832146 A CN102832146 A CN 102832146A
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- chip
- igbt module
- upper substrate
- igbt
- welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
The invention discloses an IGBT (insulated gate bipolar translator) module packaging process and an IGBT module with bidirectional heat radiation, belonging to the technical field of semiconductor device manufacturing. The process comprises the following steps: step 1.1, implanting a metal ball (2) on a chip (4); step 1.2, covering bad chips and cutting the chip; step 1.3, welding a lower substrate (6) with crystalline grains in a vacuum mode; step 1.4, welding an upper substrate (3) with the chip; step 1.5 welding the upper substrate with an upper heat radiation fin (1); and step 1.6, welding pole piece terminals, molding a shell and printing words on the shell, injecting silica gel, testing and packaging. The process has the advantages that by adopting the chip metal implanted ball technique, the damage to the chip is reduced as no metal line is used, and with the adoption of the IGBT module manufactured by using the advanced process, the heat radiation of a product is increased by additionally arranging the heat radiation fin externally, and the module efficiency and the pass percent are increased, etc.
Description
Technical field
The IGBT module of a kind of IGBT module package technology and bidirectional cooling belongs to the semiconductor device processing technology field, is specifically related to a kind of novel NOW PAK IGBT (insulated gate bipolar transistor) module and packaging technology.
Background technology
As shown in Figure 9; Tradition insulated gate bipolar transistor IGBT module package all adopts the mode of breaking metal wire 7 to carry out the parallel connection of chip, series connection to reach the purpose that improves blocks current voltage; The method very easily causes damage (chip area is bigger, and it is many to beat number of lines, has out-of-flatness promptly can damage chip slightly like chips welding) for the high-power IGBT chip; And chip top can't connect fin, and radiating effect is poor.Yin Wendu raises and causes product failure easily in use.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency of prior art, need not traditional routing mode prevent the damage that chip is caused; The product good heat dissipation effect of producing, the IGBT module package technology that can promote chip efficient and yield and IGBT module.
The technical solution adopted for the present invention to solve the technical problems is: this a kind of IGBT module package technology is characterized in that: comprise the steps:
Step 1.1: implanted metal ball on chip;
Step 1.2: bad chip covers and diced chip;
Step 1.3: infrabasal plate and crystal grain vacuum welding;
Step 1.4: fin on after having welded circuit board above the upper substrate, welding again;
Step 1.5: the welding of pole piece terminal, outer casing forming and lettering, silica gel inject, test, packing.
Adopt aforesaid right to require the IGBT module of the bidirectional cooling of 1 described technology making, it is characterized in that: implanted metal ball on chip, metal ball directly are connected chip with the upper substrate that has circuit, heat abstractor is set above upper substrate.
Heat abstractor comprises the last fin of upper substrate and its top.
Upper substrate and infrabasal plate are ceramic copper-clad plate.So middle pottery is that insulating barrier can add fin outward.
Last fin is a fin-shaped.Improve the heat-sinking capability of product.Improve module useful life.
The material of metal ball uses a kind of in gold, tin or the silver, single diameter 12-15mil of metal ball.
Compared with prior art; The beneficial effect of the IGBT module of a kind of IGBT module package technology of the present invention and bidirectional cooling is: the present invention cancels and uses the mode break metal wire that chip is carried out parallel connection, series connection; Adopting chip to plant the playing skill art directly uses the upper substrate that has circuit to realize the parallel connection and the series connection of chip; Adopt ceramic copper-clad plate because of upper substrate simultaneously; Fin be can add outward so the pottery at the centre or the back side is an insulating barrier, heat-sinking capability and useful life that radiating effect improves the IGBT module increased.Avoid producing metal wire causes damage to chip the problem of beating as shown in Figure 9.
1, adopt the chip metal to plant the playing skill art; Need not break metal wire and reduce the damage of routing chip, need not traditional routing mode and plant ball with metal and directly chip is connected lifting chip efficient 15% with the upper substrate that has circuit; Chip efficient reaches more than 95%, and IGBT module yield can improve 10%.
2, can add outward on the upper substrate of IGBT of the present invention that fin improves the heat-sinking capability of product, infrabasal plate can add water-cooled power converter, effectively reaches heat-sinking capability, and heat-sinking capability improves more than 20%.
3, the material of metal ball uses gold, tin, silver, plants single diameter 12mil of ball between the 15mil.
4, the present invention also is applicable to the encapsulation flow process of other power model.
Overcome prior art, very easily caused damage (chip area is bigger, and it is many to beat number of lines, has out-of-flatness promptly can damage chip slightly like chips welding) for the high-power IGBT chip, and chip top can't connect fin, radiating effect is poor.The Yin Wendu rising causes shortcomings such as product failure easily in use.
Description of drawings
Fig. 1 is the process chart of IGBT module of the present invention;
Fig. 2 is the structural representation of IGBT module of the present invention;
Fig. 3 is the local enlarged diagram of the I of Fig. 2;
Fig. 4 is a not implanted metal spherical structure sketch map of chip;
Fig. 5 is a chip implanted metal spherical structure sketch map;
Fig. 6 is chip and infrabasal plate 6 Welding Structure sketch mapes;
Fig. 7 is chip and upper substrate 3 Welding Structure sketch mapes;
Fig. 8 is fin 1 structural representation in upper substrate 3 external weldings;
Fig. 9 is prior art routing figure.
Wherein: 1, go up fin 2, metal ball 3, upper substrate 4, chip 5, following heating panel 6, infrabasal plate 7, metal wire.
Embodiment
Fig. 1-3,5-8 are the most preferred embodiments of IGBT module package technology of the present invention and IGBT module, and 1～8 couple of the present invention further specifies below in conjunction with accompanying drawing.
With reference to accompanying drawing 1-8:
IGBT module of the present invention is by last fin 1, metal ball 2, upper substrate 3, chip 4, heating panel 5 and infrabasal plate 6 are formed down; Implanted metal ball 2 on chip 4; Metal ball 2 directly is connected chip 4 with the upper substrate that has circuit 3, above metal ball 2, heat abstractor is set.Heat abstractor comprises the last fin 1 of upper substrate 3 and its top.Upper substrate 3 is ceramic copper-clad plate with infrabasal plate 6.Last fin 1 is a fin-shaped.
With reference to accompanying drawing 4 and Fig. 5:
Fig. 4 is the not chip of implanted metal ball 2 of prior art.
Fig. 5 is the chip of implanted metal ball 2.Metal ball 2 materials use gold, tin, silver, plant single diameter 12mil of ball between the 15mil.As shown in Figure 5 metal ball in a row 2 is implanted on the chip 4 uniformly at intervals, planted full entire chip 4.Realization is connected chip 4 with the direct of the upper substrate that has circuit 3.
This IGBT module package technology comprises the steps:
Step 1.1: implanted metal ball 2 on chip 4;
Step 1.2: bad chip covers and diced chip;
Step 1.3: infrabasal plate 6 and crystal grain vacuum welding;
Step 1.4: fin 1 on after having welded circuit board above the upper substrate 3, welding again;
Step 1.5: the welding of pole piece terminal, outer casing forming and lettering, silica gel inject, test, packing.
The operation principle and the course of work are following:
The present invention is in the making of IGBT module, at first to chip 4 implanted metal balls 2, with heating panel 5, infrabasal plate 6 use vacuum brazing stove welded together with the chip 4 of implanted metal ball 2 down; Metal wire 7 is used in cancellation; Metal ball 2 directly is connected chip 4 with the upper substrate that has circuit 3, the damage of having avoided routing that chip 4 is caused, and add the radiating effect of fin 1 enforcement module outside can be on upper substrate 3; And then the welding upper terminal covers shell injection silica gel; Test back packing is promptly accomplished the flow process of whole NOW PAK IGBT module package, and the IGBT module yield that uses present technique to make can improve 10%, and heat-sinking capability improves 20%.
The present invention mainly solves and breaks metal wire in the IGBT module package chip is caused damage, and the problem of poor radiation.The present invention changes the wire that connects chip 4 into have line construction upper substrate 3 structures, has eliminated the damage that routing causes chip 4.And keep the operation principle and the electrical functionality of former IGBT module, because upper substrate 3 adopts the three-decker ceramic copper-clad plate of copper-pottery-copper,, increase radiating effect and improve module useful life so middle pottery is that insulating barrier can add fin 1 outward.Upper substrate can also adopt the ceramic copper-clad plate of copper-ceramic double-layer structure according to design demand, has the insulation of single face conductive back side.Still can add fin 1 outward, realize increasing radiating effect and improve the module purpose in useful life.
The above only is preferred embodiment of the present invention, is not to be the restriction of the present invention being made other form, and any professional and technical personnel of being familiar with possibly utilize the technology contents of above-mentioned announcement to change or be modified as the equivalent embodiment of equivalent variations.But everyly do not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and remodeling that above embodiment did, still belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (6)
1. an IGBT module package technology is characterized in that: comprise the steps:
Step 1.1: go up implanted metal ball (2) at chip (4);
Step 1.2: bad chip covers and diced chip;
Step 1.3: infrabasal plate (6) and crystal grain vacuum welding;
Step 1.4: fin (1) is gone up in welding again after circuit board has been welded in upper substrate (3) top;
Step 1.5: the welding of pole piece terminal, outer casing forming and lettering, silica gel inject, test, packing.
2. IGBT module that adopts the bidirectional cooling that the described technology of claim 1 makes; It is characterized in that: go up implanted metal ball (2) at chip (4); Metal ball (2) directly is connected chip with the upper substrate that has circuit (3), in upper substrate (3) top heat abstractor is set.
3. the IGBT module of bidirectional cooling according to claim 2 is characterized in that: heat abstractor comprises the last fin (1) of upper substrate (3) and its top.
4. the IGBT module of bidirectional cooling according to claim 3, it is characterized in that: upper substrate (3) and infrabasal plate (6) are ceramic copper-clad plate.
5. the IGBT module of bidirectional cooling according to claim 3 is characterized in that: go up fin (1) and be fin-shaped.
6. the IGBT module of bidirectional cooling according to claim 2 is characterized in that: the material of metal ball (2) uses a kind of in gold, tin or the silver, single diameter 12-15mil of metal ball (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103271326A CN102832146A (en) | 2012-09-06 | 2012-09-06 | IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103271326A CN102832146A (en) | 2012-09-06 | 2012-09-06 | IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation |
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| CN102832146A true CN102832146A (en) | 2012-12-19 |
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| CN2012103271326A Pending CN102832146A (en) | 2012-09-06 | 2012-09-06 | IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979333A (en) * | 2019-05-17 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2591772Y (en) * | 2002-12-26 | 2003-12-10 | 威盛电子股份有限公司 | Chip package structure |
| US6724078B1 (en) * | 2000-08-31 | 2004-04-20 | Intel Corporation | Electronic assembly comprising solderable thermal interface |
| US20040080041A1 (en) * | 2002-10-21 | 2004-04-29 | Nec Electronics Corporation | Semiconductor device with improved heatsink structure |
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- 2012-09-06 CN CN2012103271326A patent/CN102832146A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6724078B1 (en) * | 2000-08-31 | 2004-04-20 | Intel Corporation | Electronic assembly comprising solderable thermal interface |
| US20040080041A1 (en) * | 2002-10-21 | 2004-04-29 | Nec Electronics Corporation | Semiconductor device with improved heatsink structure |
| CN2591772Y (en) * | 2002-12-26 | 2003-12-10 | 威盛电子股份有限公司 | Chip package structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979333A (en) * | 2019-05-17 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
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Application publication date: 20121219 |