CN1028191C - Silicon chip directive bonding method - Google Patents
Silicon chip directive bonding method Download PDFInfo
- Publication number
- CN1028191C CN1028191C CN 92107813 CN92107813A CN1028191C CN 1028191 C CN1028191 C CN 1028191C CN 92107813 CN92107813 CN 92107813 CN 92107813 A CN92107813 A CN 92107813A CN 1028191 C CN1028191 C CN 1028191C
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- bonding
- silicon chip
- silicon chips
- temperature
- silicon
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- Pressure Welding/Diffusion-Bonding (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a directly bonding method for silicon chips, which is suitable for direct chemical bonding among silicon chips. Mirror polished silicon chips are boiled in the mixed liquid of H2SO4 and H2O2 and then are rinsed in dilute HF solution. After washed clean by deionized water and dripped dry at room temperature, the silicon chips can be matched together. The matched silicon chips are quickly put into a high temperature furnace to be carried out with heat treatment. Then temperature is slowly reduced, and the direct bonding of the silicon chips can be realized. The present invention has the advantages of simple process and equipment, high matching speed, short bonding period, large bonding area, etc., can be used for the bonding of various materials and is convenient to popularization and application in large scale production.
Description
The invention belongs to the directly bonding semiconductor technical field.
Silicon direct bonding (SDB) technology is the microelectronics at first developed by IBM Corporation and Toshiba and the important new technology of field of power electronics.It is with two oxidations or unoxidized silicon chip, realize direct chemical bonding and form integral body, between two silicon chips without any bonding agent.At present, silicon chip directive bonding method both domestic and external need carry out special surface combination key enhancement process to oxidation or unoxidized silicon chip usually, and it is complicated that bonding technology has been brought.Chinese patent CN87108314 provides a kind of process of directly bonding semiconductor, at first will carry out surface combination key enhancement process through good oxidation of mirror finish or two silicon chips of not oxidation, using plasma activates silicon chip surface, silicon chip is immersed in acidity, alkalescence or the molecule-type surfactant solution, make silicon chip surface hydrophilic; Then silicon chip is cleaned, oven dry, again silicon chip pack into Face to face clamp in the anchor clamps after, under 200~500 ℃ of temperature, cured 30~60 minutes; At last the silicon chip of preliminary bonding is removed anchor clamps, constant temperature is 30~60 minutes under 1000~1200 ℃ of high temperature, realizes diffusion interlinked.This bonding technology complexity, not only need a large amount of chemicals of spend and time etc., and in preliminary bonding process, can make generation cavity between two silicon chips, and these spaces are difficult to eliminate in the high temperature bonding, and therefore being difficult to obtain large tracts of land does not have empty bonding silicon chip.
The present invention is directed to the deficiencies in the prior art, the silicon chip directive bonding method that provides a kind of technology simple, easy to operate is provided its purpose, and it can realize that large tracts of land do not have the bonding silicon chip in cavity.
The present invention will directly clean drying through bright finished silicon chip, again two cleaned silicon chips are realized that at room temperature minute surface closely contacts, two silicon chips are coincided together, drop in the high temperature furnace fast then and heat-treat, slow again cooling can realize Direct Bonding of Silicon Wafers after constant temperature was handled.The temperature of high-temperature heat treatment can be 980-1050 ℃, and constant temperature time is 30~90 minutes.
The present invention compared with prior art has the following advantages:
1. technology is extremely simple.Silicon chip surface does not need to carry out special activation processing in cleaning process, not only saves time. and laborsaving, and can save a large amount of chemicals.The silicon chip that cleans after drying only needs at room temperature to overlap in advance, and does not need the pre-bonding under 200-500 ℃, does not more need anchor clamps.
2. coincidence speed is fast.Do not have the silicon chip of pit and particle for the surface, clean dry after, only need two silicon chips can be coincided together a few times in second, and do not have the cavity.For Si-Si bonding, because the surface is hydrophobic shape, the silicon chip behind the bonding can obtain good Ohmic contact.
3. the bonding cycle is short.Overlap good silicon chip and can drop into fast in the stove about 1000 ℃ and heat-treat, and the cavity can not occur.
4. bonding area is big.Silicon chip behind the bonding except the edge of 2~5mm, can be realized the bonding of whole area, and its intensity can reach the intensity of body silicon.
5. the bonding that can be used for multiple material.Not only can be used for N
+/ N, P
+/ N
-, N
+N
-/ N
-, N
-P
+/ N
+Deng Si-Si bonding, and can be used for the preparation of SOI material, can also be used to have the wafer bonding of patterned surface.
6. equipment is simple, and is with low cost, can apply in a large amount of production.
The present invention can adopt following embodiment to realize:
At first check the silicon chip surface after the mirror finish, the surface is not had the silicon chip of pit or particle at H
2SO
4With H
2O
2Mixed liquor in boil (or soak), the mixed liquor ratio can be H
2SO
4: H
2O
2=(1~5): 1, time is 5~10 minutes (also can adopt other conventional cleaning method), rinse the back well with deionized water and in the HF solution of (0.5-10) %, float 10 seconds~10 minutes (for unoxidized silicon chip, its surface is hydrophobic shape), rinse well with deionized water, and can aim at the crystal orientation coincidence after at room temperature drying.Overlap good silicon chip and drop into fast in 1000 ℃ of stoves, constant temperature 40~60 minutes, slowly cooling can realize that silicon chip is bonded to one securely then.In order to improve the quality of bonding silicon chip, can be in the high-temperature process by protective gas such as nitrogen.
Claims (3)
1, a kind of silicon chip directive bonding method that is used for realizing between the silicon chip direct chemical bonding, it is characterized in that and directly to clean drying through bright finished silicon chip, realize at room temperature that again minute surface closely contacts, two silicon chips are coincided together, drop in the high temperature furnace fast then and heat-treat, slow again cooling can realize Direct Bonding of Silicon Wafers after constant temperature was handled.
2, silicon chip directive bonding method according to claim 1, the temperature that it is characterized in that high-temperature heat treatment is 980~1050 ℃, constant temperature time is 30~90 minutes.
3, silicon chip directive bonding method according to claim 1 and 2 is characterized in that silicon chip directly cleans employing H
2SO
4: H
2O
2=(1~5): boiled in 1 the mixed liquor 5~10 minutes, and rinsed the back well with deionized water and in the HF solution of (0.5~10) %, floated 10 seconds~10 minutes, rinse with deionized water again and at room temperature dry.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92107813 CN1028191C (en) | 1992-11-10 | 1992-11-10 | Silicon chip directive bonding method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92107813 CN1028191C (en) | 1992-11-10 | 1992-11-10 | Silicon chip directive bonding method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1086926A CN1086926A (en) | 1994-05-18 |
CN1028191C true CN1028191C (en) | 1995-04-12 |
Family
ID=4943078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 92107813 Expired - Fee Related CN1028191C (en) | 1992-11-10 | 1992-11-10 | Silicon chip directive bonding method |
Country Status (1)
Country | Link |
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CN (1) | CN1028191C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013026277A1 (en) * | 2011-08-19 | 2013-02-28 | 上海新傲科技股份有限公司 | Preparation method of multilayer semiconductor substrate |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1037386C (en) * | 1995-12-12 | 1998-02-11 | 吉林大学 | Thin silicon chip material on diamond film and its prepn. |
JP3141801B2 (en) * | 1996-12-13 | 2001-03-07 | 日本電気株式会社 | SOI substrate |
CN100356507C (en) * | 2004-07-09 | 2007-12-19 | 中国科学院上海微系统与信息技术研究所 | Direct bonding method for indium phosphide and gallium arsenide materials |
CN102963865B (en) * | 2012-09-15 | 2015-07-29 | 华东光电集成器件研究所 | A kind of processing method of Si-Si bonding surface contamination |
CN103794467A (en) * | 2014-02-21 | 2014-05-14 | 上海超硅半导体有限公司 | Recycle method for thin silicon wafers |
CN105197880B (en) * | 2014-06-24 | 2018-03-20 | 中芯国际集成电路制造(上海)有限公司 | A kind of bonding method with cavity chip |
CN105632902B (en) * | 2015-12-30 | 2018-03-06 | 哈尔滨工业大学 | A kind of method that the controllable wafer bonding of high/low temperature is carried out using semiconductor chilling plate |
CN108878270A (en) * | 2017-11-09 | 2018-11-23 | 上海长园维安微电子有限公司 | A kind of high power density TVS device and its manufacturing method |
-
1992
- 1992-11-10 CN CN 92107813 patent/CN1028191C/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013026277A1 (en) * | 2011-08-19 | 2013-02-28 | 上海新傲科技股份有限公司 | Preparation method of multilayer semiconductor substrate |
Also Published As
Publication number | Publication date |
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CN1086926A (en) | 1994-05-18 |
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