CN102963865B - A kind of processing method of Si-Si bonding surface contamination - Google Patents
A kind of processing method of Si-Si bonding surface contamination Download PDFInfo
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- CN102963865B CN102963865B CN201210340681.7A CN201210340681A CN102963865B CN 102963865 B CN102963865 B CN 102963865B CN 201210340681 A CN201210340681 A CN 201210340681A CN 102963865 B CN102963865 B CN 102963865B
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Abstract
The present invention relates to a kind of processing method of Si-Si bonding surface contamination, comprise the following steps: a, a making silicon spacer adapted with silicon chip shape to be bonded, silicon spacer surface deposition one deck silicon nitride film; B, the one side of silicon spacer deposited silicon nitride aimed at silicon chip to be bonded be adjacent to, be positioned in bonding fixture fixing; C, silicon spacer and silicon chip to be bonded are carried out pre-bonding, after pre-bonding, take silicon spacer off, d, the silicon chip after pre-bonding is carried out sintering bonding.Tool of the present invention has the following advantages: (1) the present invention does not need chemistry and physical means to remove, and can improve the integrality of MEMS movable structure; (2) the present invention is simple and practical, and using method is easy to operation, is suitable for extensive use in production and processing.
Description
Technical field
The invention belongs to micro-electronic mechanical skill field, relate to a kind of method processing Si-Si direct bonding silicon chip surface and stain.
Background technology
Si V groove technology is a kind of typical MEMS bonding techniques, it is through surface clean and activation process by the silicon chip of two panels CMP polishing, at room temperature directly fit, through the pre-bonding of low temperature, then increase a kind of bonding techniques of bond strength through the high temperature anneal.This bonding techniques does not need adhesive, the resistivity of two bonding pads and conduction type can unrestricted choice, and owing to being the bonding of same material, residual stress is there is not after bonding, this bonded seal is fabulous simultaneously, do conventional vacuum encapsulation not need additionally to add getter, therefore, this bonding techniques has attracted the extensive concern of people with the superiority of its uniqueness.
The problem that in production process, Si-Si direct bonding technique exists silicon chip surface solid particle, ion stains.The method that more existing process silicon chip surfaces stain, needs chemistry and physical means to remove, but there is movable structure in MEMS, can destroy the movable structure of device by these methods, be not suitable for MEMS processing.
Summary of the invention
The object of the invention is in order to the problem that there is silicon chip surface solid particle when solving present Si-Si direct bonding, ion stains, the processing method of a kind of Si-Si bonding surface contamination provided.
There is provided a kind of pad that may be used for Si-Si direct bonding, this pad makes SiN film by surface, and be processed into given shape, be applicable to Si-Si direct bonding technique, after bonding, silicon chip surface is good.
For achieving the above object, the technical solution used in the present invention is as follows:
A processing method for Si-Si bonding surface contamination, is characterized in that comprising the following steps:
A, a making silicon spacer adapted with silicon chip shape to be bonded, silicon spacer surface deposition one deck silicon nitride SiN film;
B, the one side of silicon spacer deposited silicon nitride aimed at silicon chip to be bonded be adjacent to, be positioned in bonding fixture fixing;
C, silicon spacer and silicon chip to be bonded are carried out pre-bonding, after pre-bonding, take silicon spacer off,
D, the silicon chip after pre-bonding is carried out sintering bonding.
On the basis of technique scheme, by following further technical scheme;
Lithography process is carried out to the silicon nitride layer that silicon spacer deposits, makes silicon spacer surface form the silicon nitride salient point of array.
In the present invention, silicon spacer adopts monocrystalline silicon to be that main material is processed, and then deposited silicon nitride SiN film, photolithography thin film figure, dry etching obtains the silicon nitride raised points that SiN film obtains array.Can reduce the contact area of pad silicon nitride layer and bonding pad like this, reduce Van der Waals for, middle SiN film can avoid pad and bonding pad to melt silicon bonding.
The processing of silicon spacer shape is according to bonding grip size and shape, needing the areal calculation of excision out, utilizes scribing machine to cut into formation.Such work in-process is easy to operation and uses, and bonding pad enterprising line unit conjunction processing during use, the pad made being placed on alignment according to shape is just passable.The making of surface SiN film can effectively prevent from staiing and bonding time pad can take off easily, the processing of gasket shape is used for adaptive bonding fixture, is conveniently used for processing.
Compared with the method that the present invention and existing solution silicon chip surface stain, tool has the following advantages:
(1) the present invention adopts and uses the method for pad to avoid silicon chip surface to stain, and does not need chemistry and physical means to remove, can improve the integrality of MEMS movable structure, be more applicable for MEMS processing.
(2) the present invention is simple and practical, and Making programme, the processing method of pad are simple, and using method is easy to operation, is suitable for extensive use in production and processing.
Accompanying drawing explanation
Fig. 1 is the structure sectional view schematic diagram of silicon spacer of the present invention;
Fig. 2 is the using method schematic diagram of silicon spacer of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, the processing method of a kind of Si-Si bonding surface contamination provided by the invention is described further.
One, silicon spacer structure and making:
As shown in Figure 1, the silicon spacer in the present invention comprises: make silicon nitride 1 film on monocrystalline silicon piece 2 surface, the manufacture craft of silicon nitride film is known technology, mainly contains following step:
The conventional cleaning treatment of (a) silicon chip;
B () PECVD deposits one deck 1500 silicon nitride film;
(c) LC100A photoresist litho pattern;
D () dry etching silicon nitride, forms the silicon nitride salient point 2 of array at monocrystalline silicon piece 2.
Two, with scribing machine, silicon spacer is cut, silicon spacer and silicon chip shape to be bonded are adapted;
Three, the using method of silicon spacer:
As shown in Figure 2, during use, silicon spacer 2 is placed on bonding pad with silicon nitride film one side, carries out bonding technology.
To aim at silicon chip 3 to be bonded by the one side of silicon spacer deposited silicon nitride and be adjacent to, be positioned in bonding fixture fixing;
Silicon spacer 2 and silicon chip to be bonded 3 are carried out pre-bonding, and pre-bonding process is as follows:
Silicon chip million sound cleaning treatment,
Plasma surface activation process,
Bonding aligning equipment overlay alignment, the one side of silicon spacer 2 deposited silicon nitride is aimed at silicon chip 3 to be bonded and is adjacent to,
Pre-bonding (temperature 400, pressure 4000mbar, 20 minutes time),
Take off silicon spacer, the silicon chip 3 after pre-bonding carried out sintering bonding (temperature 1100),
Silicon pad, 2 directly take off, and do not need special tool(s),
Silicon after pre-bonding, 3 surface quality are good, and microscopic examination is not stain.After high temperature sintering bonding, silicon chip surface is not abnormal.
Claims (2)
1. a processing method for Si-Si bonding surface contamination, is characterized in that comprising the following steps:
A, a making silicon spacer adapted with silicon chip shape to be bonded, silicon spacer surface deposition one deck silicon nitride film;
B, the one side of silicon spacer deposited silicon nitride aimed at silicon chip to be bonded be adjacent to, be positioned in bonding fixture fixing;
C, silicon spacer and silicon chip to be bonded are carried out pre-bonding, after pre-bonding, take silicon spacer off;
D, the silicon chip after pre-bonding is carried out sintering bonding.
2. the processing method of a kind of Si-Si bonding surface contamination according to claims 1, is characterized in that: carry out lithography process to the silicon nitride layer that silicon spacer deposits, and makes silicon spacer surface form the silicon nitride salient point of array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210340681.7A CN102963865B (en) | 2012-09-15 | 2012-09-15 | A kind of processing method of Si-Si bonding surface contamination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210340681.7A CN102963865B (en) | 2012-09-15 | 2012-09-15 | A kind of processing method of Si-Si bonding surface contamination |
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| Publication Number | Publication Date |
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| CN102963865A CN102963865A (en) | 2013-03-13 |
| CN102963865B true CN102963865B (en) | 2015-07-29 |
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| CN201210340681.7A Active CN102963865B (en) | 2012-09-15 | 2012-09-15 | A kind of processing method of Si-Si bonding surface contamination |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110642221B (en) * | 2019-09-18 | 2022-08-05 | 西安交通大学 | Piezoelectric MEMS structure hydrophilic silicon-silicon direct bonding process |
| CN113551672A (en) * | 2021-07-09 | 2021-10-26 | 赛莱克斯微系统科技（北京）有限公司 | Micro-electro-mechanical system, micro-electro-mechanical system (MEMS) inertial sensor and manufacturing method thereof |
Citations (3)
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|---|---|---|---|---|
| CN1033907A (en) * | 1987-12-29 | 1989-07-12 | 东南大学 | The process of directly bonding semiconductor |
| CN1086926A (en) * | 1992-11-10 | 1994-05-18 | 东南大学 | Silicon chip directive bonding method |
| CN101736629A (en) * | 2009-12-04 | 2010-06-16 | 中国海诚工程科技股份有限公司 | Hot-pressing tympan paper and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100571848B1 (en) * | 2005-01-05 | 2006-04-17 | 삼성전자주식회사 | Silicon direct bonding method |
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- 2012-09-15 CN CN201210340681.7A patent/CN102963865B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1033907A (en) * | 1987-12-29 | 1989-07-12 | 东南大学 | The process of directly bonding semiconductor |
| CN1086926A (en) * | 1992-11-10 | 1994-05-18 | 东南大学 | Silicon chip directive bonding method |
| CN101736629A (en) * | 2009-12-04 | 2010-06-16 | 中国海诚工程科技股份有限公司 | Hot-pressing tympan paper and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "Si-Si直接键合的研究及其应用";何国荣等;《半导体光电》;20030630;第24卷(第3期);pp149-153，正文第2部分 * |
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