CN104637824A - Temporary bonding and dissociation technology method for silicon wafer - Google Patents
Temporary bonding and dissociation technology method for silicon wafer Download PDFInfo
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- CN104637824A CN104637824A CN201310552590.4A CN201310552590A CN104637824A CN 104637824 A CN104637824 A CN 104637824A CN 201310552590 A CN201310552590 A CN 201310552590A CN 104637824 A CN104637824 A CN 104637824A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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Abstract
The invention discloses a temporary bonding and dissociation technology method for a silicon wafer. The method comprises the following steps: (1) a first carrier is provided; (2) a second carrier is provided, and the first surface of the second carrier is coated with a first adhesive, and/or the bonding surface of the first carrier is coated with the first adhesive, and baking is carried out; (3) temporary bonding is carried out on the first carrier and the second carrier; (4) dissociation is carried out on the first carrier and the second carrier, and the first adhesive is cleaned to be removed; (5) the second surface of the second carrier is coated with a second adhesive, and/or the bonding surface of a silicon wafer is coated with a second adhesive, and baking is carried out; (6) temporary bonding is carried out on the second carrier and the silicon wafer; (7) the non-bonding surface of the silicon wafer is thinned, and the needed technology is carried out on the non-bonding surface; and (8) dissociation is carried out on the second carrier and the thinned silicon wafer, and the second adhesive is cleaned to be removed. The technology method solves the warping problem of the carriers and the silicon wafer in the traditional temporary bonding and dissociation technology can be solved.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process, the interim bonding relating to a kind of silicon chip conciliates separating process method, particularly relate to a kind of improve bonding after the interim bonding of slide glass and silicon warp degree conciliate separating process method.
Background technology
Along with semiconductor chip is to various components and parts integrated level and the more and more higher requirement of function, traditional two-dimensional integrated circuit has been difficult to meet its demand, therefore a kind of new technology, three dimensional integrated circuits (3DIC) arises at the historic moment, and its cardinal principle is exactly by improving the integrated level of chip or various electronic devices and components by the mode of silicon chip and silicon chip (Wafer to Wafer) or chip and the upper and lower stacked in multi-layers of silicon chip (Chip to Wafer).In 3DIC technique, need to carry out thinning to silicon chip, one is to reduce package thickness, and two is by thinning through hole (Via) metal closures exposed for chaining down two silicon chips.
In addition, the study hotspot of recent year semi-conductor discrete device, igbt (IGBT), the collector electrode of this transistorlike is formed at the back side of silicon chip, therefore in order to meet the requirement of IGBT product to junction depth and puncture voltage, also need to carry out thinning to silicon chip back side.
Different according to the requirement of 3DIC or IGBT product, thickness after required wafer thinning is different (10-200 micron) also, minimum even only have 10 microns, for silicon chip thin as a piece of paper like this, due to the reduction of its mechanical strength and the increase of angularity/flexibility, common semiconductor equipment has almost been difficult to support and transmission action, and fragment rate is very high.In order to solve support and the transmission problem of this thin silicon wafer, interim bonding/the method for dissociating is one of process of usually adopting of industry, its cardinal principle is exactly silicon chip ephemeral key is combined in the similar slide glass (glass of a diameter, sapphire or silicon materials) on, utilize this slide glass to realize the support to thin silicon wafer and transmission, thin silicon wafer can be prevented to be out of shape simultaneously, again slide glass is dissociated from thin silicon wafer after completing related process, its technological process as shown in Figure 1, comprise the steps: that (1) bonding face at silicon chip is or/and the bonding face coating adhesive of slide glass, and it is toasted, (2) described silicon chip and slide glass are carried out interim bonding, (3) by thinning for described silicon chip back side grinding, (4) silicon chip back side technique is carried out, (5) silicon chip after thinning dissociated from slide glass and clean.In the method for usual this interim bonding/dissociate, according to the difference of dissociating method in step (5), interim bonding conciliates separating process can be divided into following three kinds: chemical solvent dissociates method (Chemical Release), dissociate method (Laser/UV Light Release) and heat resolve of laser or UV-irradiation dissociates method (Thermal Decomposition Release), no matter be which kind of method above, in the interim bonding process of above-mentioned steps (2), all need to use the method for heating to make slide glass and silicon chip carry out bonding, this will produce a problem: when slide glass adopts glass material, because the CTE (Coefficient of Thermal Expansion: thermal coefficient of expansion) of simple glass is 7.1x10
-16/ DEG C, and the CTE of silicon is 2.5x10
-16/ DEG C, both differences are larger, in the process adding thermal bonding, the degrees of expansion of the glass slide caused due to heating is greater than the degrees of expansion of silicon chip, therefore warpage situation as shown in Figure 2 will be produced, namely glass slide 200X and silicon chip 300 are all bent upwards, also namely a warpage towards the nonbonding face of silicon chip 300 is produced, this angularity can (angularity namely in Fig. 2 a) represents by the difference in height of the centre position of glass slide 200X and peripheral position, time serious, angularity a can reach 1 millimeter.This warpage will cause two problems: one is that subsequent process equipment cannot glass slide 200X after normal sorption and this bonding of transmission and silicon chip 300, thus causes falling the problem of sheet, fragmentation; Two is focusing accuracy and alignment precisions of this Warping Effect subsequent optical carving technology.
Summary of the invention
The interim bonding that the technical problem to be solved in the present invention is to provide a kind of silicon chip conciliates separating process method, to solve the warpage issues that traditional interim bonding conciliates slide glass in separating process after bonding and silicon chip.
For solving the problems of the technologies described above, the interim bonding that the invention provides a kind of silicon chip conciliates separating process method, it is characterized in that, comprises step as follows:
(1) one first slide glass is provided;
(2) one second slide glass is provided, and is coated with the first binding agent at the first surface of the second slide glass, and/or be coated with the first binding agent at the bonding face of the first slide glass, and to its baking;
(3) the first slide glass and the second slide glass are carried out interim bonding, form the second slide glass of warpage;
(4) the first slide glass and the second slide glass are dissociated, cleaning removal first binding agent;
(5) be coated with the second binding agent at the second surface of the second slide glass of warpage, and/or be coated with the second binding agent at the bonding face of a silicon chip, and to its baking;
(6) the second slide glass of warpage and silicon chip are carried out interim bonding, the second slide glass of warpage recovers formation state;
(7) by thinning for the nonbonding face of silicon chip, and required technique is carried out in nonbonding face;
(8) by the second slide glass and thinning after silicon chip dissociate, cleaning removal second binding agent
In step (1), the material of described first slide glass is silicon, and the thermal coefficient of expansion of described first slide glass is less than the thermal coefficient of expansion of the second slide glass described in step (2), alternatively, as dissociating of step (4) uses chemical solvent to dissociate method, then in step (1), at described first slide glass, be pre-formed loose structure, this loose structure is uniformly distributed on described first slide glass.
In step (2), the material of described second slide glass is glass, and the thermal coefficient of expansion of described second slide glass is greater than the thermal coefficient of expansion of the first slide glass described in step (1) and the silicon chip described in step (5); The first described adhesive is that laser irradiates breakdown type adhesive or dissolution with solvents type adhesive.
In step (3), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the first slide glass and the second slide glass need be heated to 150-350 DEG C, and the pressure of 100-5000 newton is applied in the side, nonbonding face of the first slide glass and/or the second slide glass, bonding time is 1-20 minute, preferably, described vacuum degree is 0.01 milli handkerchief, heating-up temperature is 250 DEG C, is 1000 newton at the side applied pressure of the second slide glass, and bonding time is 5 minutes.
In step (4), described dissociating adopts laser to irradiate method of dissociating or chemical solvent to dissociate method.Described cleaning method adopts chemical solvent slot type ablution, chemical solvent cleaning showers method, oxygen plasma ashing or tape paste method.
In step (5), described second binding agent is that laser irradiates breakdown type adhesive or heat resolve type adhesive, thickness after described second binding agent baking is 5-100 micron, and wants the shoulder height that can cover the figure on wafer bonding face completely after described second binding agent baking.
In step (6), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the second slide glass of warpage and silicon chip need be added to 150-350 DEG C, and the pressure of 100-5000 newton is applied at the second slide glass of warpage and/or the side, nonbonding face of silicon chip, bonding time is 1-20 minute, preferably, described vacuum degree 0.01 milli handkerchief, heating-up temperature 250 DEG C is 1000 newton at silicon chip side applied pressure, and bonding time is 5 minutes.
In step (7), described thining method comprises three steps: corase grind, fine grinding and polishing, describedly carries out required technique in nonbonding face and comprises etching, photoetching, ion implantation, removes photoresist or one or more industry conventional process in the technique such as cleaning.
In step (8), described dissociating adopts laser to irradiate method of dissociating or heat resolve to dissociate method, and described cleaning method adopts chemical solvent slot type ablution, chemical solvent cleaning showers method, oxygen plasma ashing or tape paste method.
Compared to the prior art, the present invention has following beneficial effect: the present invention is before the second slide glass and the interim bonding of silicon chip, the second slide glass is first allowed to experience another interim bonding/dissociation process, the second slide glass is made to produce warpage by the high temperature in interim bonding process, therefore in the second slide glass and the interim bonding of silicon chip 300 (being also the interim bonding of second time) process, equally because high temperature can make the second slide glass produce warpage, but the warp direction produced in the interim bonding process of two steps is contrary, therefore two kinds of warpages can be cancelled out each other, obtain the second smooth slide glass, solve the warpage issues in tradition interim bonding reconciliation separating process, thus the subsequent process equipment that warpage can be avoided to cause cannot normal sorption and transmission this bonding after glass slide and silicon chip fall sheet, the problem of fragmentation, improve focusing accuracy and the alignment precision of subsequent optical carving technology.
Accompanying drawing explanation
Fig. 1 is that traditional interim bonding conciliates separating process flow chart;
Fig. 2 is the warpage schematic diagram that traditional interim bonding conciliates slide glass and silicon chip in separating process;
Fig. 3 is that interim bonding of the present invention conciliates separating process flow chart;
Fig. 4 (A)-Fig. 4 (H) is that interim bonding of the present invention conciliates separating process schematic flow sheet; Wherein, Fig. 4 (A) is the one first slide glass schematic top plan view in the inventive method; Fig. 4 (B) is the schematic diagram after the step (2) of the inventive method completes; Fig. 4 (C) is the schematic diagram after the step (3) of the inventive method completes; Fig. 4 (D) is the schematic diagram after the step (4) of the inventive method completes; Fig. 4 (E) is the schematic diagram after the step (5) of the inventive method completes; Fig. 4 (F) is the schematic diagram after the step (6) of the inventive method completes; Fig. 4 (G) is the schematic diagram after the step (7) of the inventive method completes; Fig. 4 (H) is the schematic diagram after the step (8) of the inventive method completes.
In figure, description of reference numerals is as follows:
100-first slide glass, loose structure in 101-first slide glass, 200-second slide glass, the second slide glass of 200a-warpage, the first surface of 201-second slide glass, the second surface of 202-second slide glass, 200X-glass slide, 300-silicon chip, silicon chip after 300a-is thinning, figure on the bonding face of 301-silicon chip, 401-first adhesive, 402-second adhesive; The interim bonding of a-tradition conciliates the angularity in separating process.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation.
The interim bonding of a kind of silicon chip of the present invention conciliates separating process, its technological process as shown in Figure 3, it is characterized in that solving the warpage issues of slide glass in traditional handicraft after bonding and silicon chip, comprise the concrete steps as shown in Fig. 4 (A)-Fig. 4 (H), be described in detail as follows:
(1) step one, provides one first slide glass 100; The material of described first slide glass 100 is silicon, and the thermal coefficient of expansion of described first slide glass 100 is less than the thermal coefficient of expansion of the second slide glass 200 described in subsequent step (2).The method if the use chemical solvent that dissociates of subsequent step (4) dissociates, then need on described first slide glass 100, be pre-formed loose structure 101 (as Fig. 4 (A)), the aperture that this loose structure 101 is 0.5-10 millimeter by several diameters forms, and is uniformly distributed on the first slide glass 100.
(2) step 2, as shown in Fig. 4 (B), provides one second slide glass 200, and is coated with the first binding agent 401 at the first surface 201 of the second slide glass, and/or be coated with the first binding agent 401 at the bonding face of the first slide glass 100, and to its baking, the material of described second slide glass 200 is glass, the thermal coefficient of expansion of described second slide glass 200 is greater than the thermal coefficient of expansion of the first slide glass 100 described in above-mentioned steps (1) and the silicon chip 300 described in subsequent step (5), the first described adhesive 401 is that laser irradiates breakdown type adhesive, also namely after irradiating through laser, can reduce because there occurs chemical breakdown or lose its viscosity, as the LTHC of 3M company, or the first described adhesive 401 also can be dissolution with solvents type adhesive, also namely after by specific organic solvent dissolution, can reduce because there occurs chemical breakdown or lose its viscosity, as A0006 and A4001 of TOK company, described coating can adopt spin coating mode (Spin Coating) or spray mode (Spray Coating), and preferably, the present embodiment adopts spin coating mode.
(3) step 3, as shown in Fig. 4 (C), carries out interim bonding by the first slide glass 100 and the second slide glass 200; This interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the first slide glass 100 and the second slide glass 200 to 150-350 DEG C need be heated, and the pressure of 100-5000 newton is applied in the side, nonbonding face of the first slide glass 100 and/or the second slide glass 200, bonding time is 1-20 minute, preferably, the above-mentioned bonding conditions of the present embodiment is respectively: vacuum degree 0.01 milli handkerchief, heating-up temperature 250 DEG C, be 1000 newton at the second slide glass 200 side applied pressure, bonding time is 5 minutes.Thermal coefficient of expansion due to the first slide glass 100 is less than the thermal coefficient of expansion of the second slide glass 200, therefore after the interim bonding steps of high temperature, the warpage upwards as shown in Fig. 4 (C) can be there is in the first slide glass 100 and the second slide glass 200, also namely its warp direction is the nonbonding face towards the first slide glass 100, thus forms the second slide glass 200a of warpage.
(4) step 4, as shown in Fig. 4 (D), dissociates the second slide glass 200a of the first slide glass 100 and warpage, cleaning removal first binding agent 401; Described dissociating adopts laser to irradiate method of dissociating, also namely laser or UV-irradiation is imposed at the second surface 202 of the second slide glass, second slide glass 200a of this laser or UV light permeability warpage and arrive the first adhesive 401 of the first surface 201 of the second slide glass, this first adhesive 401 loses viscosity because of chemical breakdown under laser or UV-irradiation, thus the second slide glass 200a of the first slide glass 100 from warpage can be dissociated out; Or described dissociating adopts chemical solvent to dissociate method, also namely utilize chemical solvent (as terpenes organic solvent) to the dissolubility of the first adhesive 401, this chemical solvent is made to enter into the first surface 201 of the second slide glass by the loose structure 101 in the first slide glass, thus the first adhesive 401 dissolved on the first surface 201 of removal second slide glass, and then the second slide glass 200a of the first slide glass 100 and warpage is dissociated.It can thus be appreciated that, no matter adopt laser to irradiate method of dissociating or adopt chemical solvent to dissociate method, in this dissociation process, second slide glass 200a of the first slide glass 100 and warpage does not experience any pyroprocess, therefore after mutually dissociating, second slide glass 200a of the first slide glass 100 and warpage can keep the warpage situation described in step 3, and also namely the second slide glass 200a of warpage is bending towards first surface 201 direction of the second slide glass.Clean to remove the first binding agent 401 to the second slide glass 200a of warpage and the first slide glass 100 respectively after dissociating, described cleaning method can adopt chemical solvent slot type ablution, chemical solvent cleaning showers method, oxygen plasma ashing or tape paste method.
(5) step 5, as shown in Fig. 4 (E), the second slide glass 200a of upset warpage, is coated with the second binding agent 402 at the second surface 202 (also claiming bonding face) of the second slide glass, and/or be coated with the second binding agent 402 at the bonding face of a silicon chip 300, and to its baking, described second binding agent 402 is heat resolve type adhesive, also namely after heating, can reduce because there occurs chemical breakdown or lose its viscosity, as the HT10.10 of Brewer Science company, or described second binding agent 402 also can be that laser irradiates breakdown type adhesive, also namely after irradiating through laser, can reduce because there occurs chemical breakdown or lose its viscosity, as the LTHC of 3M company, described coating can adopt spin coating mode (Spin Coating) or spray mode (Spray Coating), preferably, the present embodiment adopts spin coating mode, in order to ensure the bonding effect of the best, the shoulder height of the figure 301 that can cover completely on the bonding face of silicon chip 300 wanted after baking by the second described adhesive 402, therefore, thickness after second adhesive 402 toasts depends primarily on the shoulder height of the figure 301 on bonding face, be generally 5-100 micron, preferably, in the present embodiment, the thickness of the second adhesive 402 is 25 microns.
(6) step 6, as shown in Fig. 4 (F), carries out interim bonding by the second slide glass 200a of warpage and silicon chip 300; This bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the second slide glass 200 and the silicon chip 300 to 150-350 DEG C of warpage need be added, and the pressure of 100-5000 newton is applied at the second slide glass 200a of warpage and/or the side, nonbonding face of silicon chip 300, bonding time is 1-20 minute, preferably, the above-mentioned bonding conditions of the present embodiment is respectively: vacuum degree 0.01 milli handkerchief, heating-up temperature 250 DEG C, in silicon chip 300 side, applied pressure is 1000 newton, and bonding time is 5 minutes.Thermal coefficient of expansion due to the second slide glass 200a of warpage is greater than the thermal coefficient of expansion of silicon chip 300, therefore in the interim bonding process of experience high temperature, second slide glass 200a of warpage can towards silicon chip 300 curving, that is to say that the second surface 202 towards the second slide glass bends, and the second slide glass 200a of warpage was towards bending (in the Fig. 4 (F) shown in dotted line) of the first surface 201 of the second slide glass originally, first surface 201 and second surface 202 are two relative surfaces, therefore after experiencing above-mentioned pyroprocess, two kinds of described warpages can be cancelled out each other, also namely the second slide glass 200a of warpage will return to initial formation state, thus the warpage issues solved in traditional handicraft after bonding.
(7) step 7, as shown in Fig. 4 (G), by thinning for the nonbonding face of silicon chip 300, and carries out required technique in nonbonding face; Thining method generally comprises three steps: corase grind, fine grinding and polishing, corase grind and fine grinding are generally completed by mechanical lapping mode with the diamond dust break bar of different meshes, the methods such as polishing step then useful chemical mechanical lapping (CMP), dry etching or wet etching have been come, the thickness of the silicon chip 300a after thinning depends on product demand, be generally 10-400 micron, describedly carry out required technique in nonbonding face and comprise etching, photoetching, ion implantation, remove photoresist or one or more industry conventional process in the technique such as cleaning.
(8) step 8, as shown in Fig. 4 (H), by the second slide glass 200 and thinning after silicon chip 300a dissociate, cleaning removal second binding agent 402; Described dissociating refers to that laser irradiates method of dissociating, also namely laser or UV-irradiation is imposed at the first surface 201 of the second slide glass, this laser or UV light permeability second slide glass 200 and arrive the second adhesive 402 of the second surface 202 of the second slide glass, this second adhesive 402 loses viscosity because of chemical breakdown under laser or UV-irradiation, thus the silicon chip 300a after thinning can be dissociated out from the second slide glass 200; Or described dissociating refers to that heat resolve dissociates method, also be heated to 250-450 DEG C (this temperature is than the bonding temperature height at least 50 DEG C in step 6) by the bonding body after step 7 completes, second adhesive 402 issues biochemical decomposition at this temperature conditions and reduces or lose its viscosity, thus the silicon chip 300a after thinning can be dissociated out from the second slide glass 200.After dissociating respectively to the second slide glass 200 and thinning after silicon chip 300a clean to remove the second binding agent 402, described cleaning method can adopt chemical solvent slot type ablution, chemical solvent cleaning showers method, oxygen plasma ashing or tape paste method.
As can be seen here, in the methods of the invention, before the second slide glass 200 and the interim bonding of silicon chip 300, the second slide glass 200 is first allowed to experience another interim bonding/dissociation process, the second slide glass 200 is made to produce warpage by the high temperature in interim bonding process, therefore in the second slide glass 200 and the interim bonding of silicon chip 300 (being also the interim bonding of second time) process, equally because high temperature can make the second slide glass 200 produce warpage, but the warp direction produced in the interim bonding process of two steps is contrary, therefore two kinds of warpages can be cancelled out each other, obtain the second smooth slide glass 200, solve the warpage issues in tradition interim bonding reconciliation separating process.
Claims (16)
1. the interim bonding of silicon chip conciliates a separating process method, it is characterized in that, comprises step as follows:
(1) one first slide glass is provided;
(2) one second slide glass is provided, and is coated with the first binding agent at the first surface of the second slide glass, and/or be coated with the first binding agent at the bonding face of the first slide glass, and to its baking;
(3) the first slide glass and the second slide glass are carried out interim bonding, form the second slide glass of warpage;
(4) the first slide glass and the second slide glass are dissociated, cleaning removal first binding agent;
(5) be coated with the second binding agent at the second surface of the second slide glass of warpage, and/or be coated with the second binding agent at the bonding face of a silicon chip, and to its baking;
(6) the second slide glass of warpage and silicon chip are carried out interim bonding, the second slide glass of warpage recovers formation state;
(7) by thinning for the nonbonding face of silicon chip, and required technique is carried out in nonbonding face;
(8) by the second slide glass and thinning after silicon chip dissociate, cleaning removal second binding agent.
2. method according to claim 1, is characterized in that, in step (1), the material of described first slide glass is silicon, and the thermal coefficient of expansion of described first slide glass is less than the thermal coefficient of expansion of the second slide glass described in step (2).
3. method according to claim 1 and 2, is characterized in that, as dissociating of step (4) uses chemical solvent to dissociate method, then in step (1), at described first slide glass, be pre-formed loose structure, this loose structure is uniformly distributed on described first slide glass.
4. method according to claim 1, it is characterized in that, in step (2), the material of described second slide glass is glass, and the thermal coefficient of expansion of described second slide glass is greater than the thermal coefficient of expansion of the first slide glass described in step (1) and the silicon chip described in step (5).
5. method according to claim 1, is characterized in that, in step (2), the first described adhesive is that laser irradiates breakdown type adhesive or dissolution with solvents type adhesive.
6. method according to claim 1, it is characterized in that, in step (3), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the first slide glass and the second slide glass need be heated to 150-350 DEG C, and the pressure of 100-5000 newton is applied in the side, nonbonding face of the first slide glass and/or the second slide glass, bonding time is 1-20 minute.
7. method according to claim 6, is characterized in that, in step (3), described vacuum degree is 0.01 milli handkerchief, and heating-up temperature is 250 DEG C, is 1000 newton at the side applied pressure of the second slide glass, and bonding time is 5 minutes.
8. method according to claim 1, is characterized in that, in step (4), described dissociating adopts laser to irradiate method of dissociating or chemical solvent to dissociate method.
9. method according to claim 1, is characterized in that, in step (5), described second binding agent is that laser irradiates breakdown type adhesive or heat resolve type adhesive.
10. the method according to claim 1 or 9, it is characterized in that, in step (5), the thickness after described second binding agent baking is 5-100 micron, and wants the shoulder height that can cover the figure on wafer bonding face completely after described second binding agent baking.
11. methods according to claim 1, it is characterized in that, in step (6), described interim bonding process is complete in the airtight cavity of 0.001-0.1 milli handkerchief in a vacuum degree, and the second slide glass of warpage and silicon chip need be added to 150-350 DEG C, and the pressure of 100-5000 newton is applied at the second slide glass of warpage and/or the side, nonbonding face of silicon chip, bonding time is 1-20 minute.
12. methods according to claim 12, is characterized in that, in step (6), described vacuum degree 0.01 milli handkerchief, heating-up temperature 250 DEG C is 1000 newton at silicon chip side applied pressure, and bonding time is 5 minutes.
13. methods according to claim 1, is characterized in that, in step (7), described thining method comprises three steps: corase grind, fine grinding and polishing.
14. methods according to claim 1, is characterized in that, in step (7), describedly carry out required technique in nonbonding face and comprise etching, photoetching, ion implantation, remove photoresist or one or more industry conventional process in the technique such as cleaning.
15. methods according to claim 1, is characterized in that, in step (8), described dissociating adopts laser to irradiate method of dissociating or heat resolve to dissociate method.
16. methods according to claim 1, is characterized in that, in step (4) and step (8), described cleaning method adopts chemical solvent slot type ablution, chemical solvent cleaning showers method, oxygen plasma ashing or tape paste method.
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| CN201310552590.4A CN104637824A (en) | 2013-11-08 | 2013-11-08 | Temporary bonding and dissociation technology method for silicon wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615700A (en) * | 2018-04-26 | 2018-10-02 | 上海空间电源研究所 | A kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate |
| CN109671801A (en) * | 2017-10-13 | 2019-04-23 | 济南晶正电子科技有限公司 | Ultra-thin super optical flat plate base and preparation method thereof |
| CN113716519A (en) * | 2021-07-30 | 2021-11-30 | 苏州光舵微纳科技股份有限公司 | Temporary bonding method for silicon wafer |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335571B1 (en) * | 1997-07-21 | 2002-01-01 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
| JP2008166586A (en) * | 2006-12-28 | 2008-07-17 | Fujifilm Corp | Jointing method |
| CN101552254A (en) * | 2008-04-04 | 2009-10-07 | 恩益禧电子股份有限公司 | Multilayer wiring substrate, semiconductor package, and methods of manufacturing semiconductor package |
| CN102257190A (en) * | 2009-04-15 | 2011-11-23 | 住友电气工业株式会社 | Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device |
| US20120229999A1 (en) * | 2011-03-08 | 2012-09-13 | Rafiqul Hussain | Circuit board clamping mechanism |
| CN102751207A (en) * | 2012-07-26 | 2012-10-24 | 江苏物联网研究发展中心 | Wafer temporary bonding method |
| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
-
2013
- 2013-11-08 CN CN201310552590.4A patent/CN104637824A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335571B1 (en) * | 1997-07-21 | 2002-01-01 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
| JP2008166586A (en) * | 2006-12-28 | 2008-07-17 | Fujifilm Corp | Jointing method |
| CN101552254A (en) * | 2008-04-04 | 2009-10-07 | 恩益禧电子股份有限公司 | Multilayer wiring substrate, semiconductor package, and methods of manufacturing semiconductor package |
| CN102257190A (en) * | 2009-04-15 | 2011-11-23 | 住友电气工业株式会社 | Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device |
| US20120229999A1 (en) * | 2011-03-08 | 2012-09-13 | Rafiqul Hussain | Circuit board clamping mechanism |
| CN102751207A (en) * | 2012-07-26 | 2012-10-24 | 江苏物联网研究发展中心 | Wafer temporary bonding method |
| CN103035483A (en) * | 2012-08-28 | 2013-04-10 | 上海华虹Nec电子有限公司 | Temporary bonding and dissociating process method applied to thin silicon slices |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671801A (en) * | 2017-10-13 | 2019-04-23 | 济南晶正电子科技有限公司 | Ultra-thin super optical flat plate base and preparation method thereof |
| CN108615700A (en) * | 2018-04-26 | 2018-10-02 | 上海空间电源研究所 | A kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate |
| CN113716519A (en) * | 2021-07-30 | 2021-11-30 | 苏州光舵微纳科技股份有限公司 | Temporary bonding method for silicon wafer |
| CN113716519B (en) * | 2021-07-30 | 2023-12-19 | 苏州光舵微纳科技股份有限公司 | Temporary bonding method of silicon wafer |
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