CN113716519B - Temporary bonding method of silicon wafer - Google Patents
Temporary bonding method of silicon wafer Download PDFInfo
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- CN113716519B CN113716519B CN202110867527.4A CN202110867527A CN113716519B CN 113716519 B CN113716519 B CN 113716519B CN 202110867527 A CN202110867527 A CN 202110867527A CN 113716519 B CN113716519 B CN 113716519B
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- attaching structure
- substrate
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- colloidal
- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 50
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 8
- 229920002545 silicone oil Polymers 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229920000742 Cotton Polymers 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 31
- 238000012545 processing Methods 0.000 abstract description 24
- 238000010923 batch production Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012827 research and development Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/032—Gluing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to a temporary bonding method of a silicon wafer, which comprises the following steps: step A: uniformly coating colloidal liquid on the surface of the silicon substrate to form a colloidal coating; and (B) step (B): manually attaching a transparent substrate to the silicon substrate with the colloidal coating, and ensuring alignment of the transparent substrate and the silicon substrate to form an attaching structure; step C: heating the attaching structure and volatilizing bubbles; step D: and placing the heated attaching structure in vacuum equipment, and applying pressure by using low-pressure. Through the arrangement, the problem that the existing silicon wafer bonding process is not suitable for small-batch production or trial processing due to high input cost of automatic bonding equipment can be solved.
Description
Technical Field
The invention relates to the technical field of silicon wafer bonding, in particular to a temporary bonding method of a silicon wafer.
Background
With the continuous development of micro-nano processing technology, micro-nano processing of optical components is also researched and developed along with large-scale mass production, and optical application products such as DOE, diffuser, AR/VR and the like are not separated from micro-nano processing processes.
Temporary bonding techniques refer to methods of tightly bonding silicon wafers to silicon wafers, silicon wafers to glass or other materials by chemical and physical action.
Temporary bonding is often combined with surface silicon processing and glass processing and used in micro-nano processing technology processes of MEMS, optical components and the like.
Common temporary bonding techniques include anodic bonding, eutectic bonding, and glue bonding.
At present, in micro-nano processing of optical components, a transparent substrate is subjected to an optical exposure process, a common bonding process is to directly attach the transparent substrate to a silicon wafer in vacuum by using a UV adhesive film as a medium layer through automatic bonding equipment, and the temporary bonding mode can solve the problem of the optical exposure process of the transparent substrate and is suitable for mass production. However, the equipment is expensive in cost and large in investment, and is not suitable for the groups and startup companies just started or in the research and development stage.
Therefore, in the temporary bonding process (silicon wafer and glass sheet) commonly used today, a transparent substrate is bonded with a silicon wafer by using a UV adhesive film, vacuum lamination is directly performed by using automatic bonding equipment, and UV curing and UV bond releasing are performed by using 254 and 405nm light sources, so that the equipment investment cost of the processing process is high, the processing process is relatively suitable for mass production, and the processing process is not suitable for startup or in a project research and development stage, or a startup company of a product process route is not confirmed yet.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a temporary bonding method of a silicon wafer, which solves the problem that the existing silicon wafer bonding technology is not suitable for small-batch production or trial processing due to high input cost of automatic bonding equipment.
In order to achieve one of the above objects, an embodiment of the present invention provides a temporary bonding method for a silicon wafer, including:
step A: uniformly coating colloidal liquid on the surface of the silicon substrate to form a colloidal coating;
and (B) step (B): manually attaching a transparent substrate to the silicon substrate with the colloidal coating, and ensuring alignment of the transparent substrate and the silicon substrate to form an attaching structure;
step C: heating the attaching structure and volatilizing bubbles;
step D: and placing the heated attaching structure in vacuum equipment, and applying pressure by using low-pressure.
As a further improvement of an embodiment of the present invention, the step D specifically includes:
step D1: sending the attaching structure into a vacuum cavity of ICP etching equipment;
step D2: and carrying out physical pressure on the attaching structure through the vacuum cavity, wherein the physical pressure comprises mechanical pressure and vacuum pressure.
As a further improvement of an embodiment of the present invention, the step D1 specifically includes:
step D11: fixing the attaching structure in a tray of the ICP etching equipment;
step D12: and conveying the tray with the attaching structure into the vacuum cavity.
As a further improvement of an embodiment of the present invention, step D11 specifically includes:
placing the attaching structure into a substrate hole groove of a quartz lower tray;
and covering the upper cover plate of the aluminum ingot on the lower quartz tray, and fixing the attaching structure in the lower quartz tray.
As a further improvement of an embodiment of the present invention, the step C specifically includes:
step C1: placing the attaching structure on a hot plate device for heating; wherein the temperature of the hot plate is set to be 90-160 ℃, and the heating time is 5-15 min.
As a further improvement of an embodiment of the present invention, the step C specifically includes:
step C2: and placing the attaching structure in a temperature control device to heat and volatilize bubbles.
As a further improvement of an embodiment of the present invention, the step a specifically includes:
a11: placing the silicon substrate on an automatic glue homogenizing machine, and pouring colloidal liquid into the center of the upper surface of the silicon substrate;
a12: controlling the glue homogenizing machine to run for 15 seconds at a rotating speed of 1000-4500 rmp/s to form the colloidal coating; wherein the thickness of the colloidal coating is 10-100 um.
As a further improvement of an embodiment of the present invention, the step a specifically includes:
a21: and (3) manually and uniformly coating the colloidal liquid on the surface of the silicon substrate by using a clean cotton swab to form the colloidal coating.
As a further improvement of an embodiment of the present invention, the colloidal liquid is silicone oil or photoresist or bonding glue.
As a further improvement of one embodiment of the present invention, before step a, the method further includes:
and cleaning the silicon substrate and the transparent substrate.
Compared with the prior art, the invention has the beneficial effects that:
in order to solve the problem of high input cost of automatic bonding equipment, the invention adopts a manual bonding process to temporarily bond the silicon wafer and the transparent substrate;
specifically, the colloidal liquid is automatically or manually uniformly coated on the surface of the silicon substrate, and then the transparent substrate is aligned with the silicon substrate and manually attached to the silicon substrate, so that the transparent substrate and the silicon substrate are bonded through the colloidal coating to form an attaching structure; then heating the whole attaching structure to remove bubbles; finally, placing the silicon wafer into vacuum equipment to carry out low-strength pressure application, so as to better optimize the bonding degree and the overall flatness between the silicon wafer and the transparent substrate;
therefore, through a manual laminating process, the transparent substrate and the silicon substrate with the colloidal coating on the surface are bonded, so that small-batch silicon wafer bonding processing or corresponding trial processing is flexibly performed, automatic bonding equipment with high input cost is avoided, small-batch processing or trial processing cost is reduced, and processing efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is evident that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a flow chart of a method for temporary bonding of a silicon wafer in an embodiment of the invention;
FIG. 2 is a flow chart of a bonding process of a silicon substrate and a transparent substrate according to an embodiment of the invention;
FIG. 3 is a schematic diagram showing the structural distribution of the upper cover plate and the Dan Yingxia tray of the aluminum ingot according to an embodiment of the invention;
fig. 4 is a schematic view of an overall process flow of a silicon substrate bonding process in accordance with an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below in conjunction with the detailed description of the present invention and the corresponding drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
The embodiments described below by referring to the drawings are exemplary only for explaining the present invention and are not to be construed as limiting the present invention.
As shown in fig. 1, an embodiment of the present invention provides a temporary bonding method for a silicon wafer, including:
step A: uniformly coating colloidal liquid on the surface of the silicon substrate to form a colloidal coating;
and (B) step (B): manually attaching the transparent substrate to the silicon substrate with the colloidal coating, and ensuring that the transparent substrate and the silicon substrate are aligned to form an attaching structure;
step C: heating the attaching structure and volatilizing bubbles;
step D: and placing the heated attaching structure in vacuum equipment, and applying pressure by using low-pressure.
In order to solve the problem of high input cost of automatic bonding equipment, the embodiment of the invention adopts a manual bonding process to temporarily bond the silicon wafer and the transparent substrate;
specifically, the colloidal liquid is automatically or manually uniformly coated on the surface of the silicon substrate, and then the transparent substrate is aligned with the silicon substrate and manually attached to the silicon substrate, so that the transparent substrate and the silicon substrate are bonded through the colloidal coating to form an attaching structure; then heating the whole attaching structure to remove bubbles; finally, placing the silicon wafer into vacuum equipment to carry out low-strength pressure application, so as to better optimize the bonding degree and the overall flatness between the silicon wafer and the transparent substrate;
therefore, through a manual laminating process, the transparent substrate and the silicon substrate with the colloidal coating on the surface are bonded, so that small-batch silicon wafer bonding processing or corresponding trial processing is flexibly performed, automatic bonding equipment with high input cost is avoided, small-batch processing or trial processing cost is reduced, and processing efficiency is improved.
As shown in fig. 2, in the embodiment of the invention, the transparent substrates such as the silicon wafer and the glass sheet are temporarily bonded manually, so that the process of no bonding equipment investment and the optical exposure requirement of the transparent substrate in micro-nano research and development processing can be solved, and the method can be used for temporarily bonding wafers with the size of 8 inches and below; the technology is simple and easy to operate, has low cost, and can effectively solve a series of sensing problems of transmission signals, focus signals, alignment marks and the like of the transparent substrate in the optical exposure technology.
Wherein, the substrate capable of being temporarily bonded manually comprises transparent or non-transparent substrates such as silicon wafers, glass sheets, quartz sheets, optical plating films and the like.
Further, the colloidal liquid is silicone oil or photoresist or bonding glue.
In the embodiment of the invention, the bonding intermediate medium layer can be colloidal liquid such as silicone oil, photoresist, bonding glue and the like.
Further, the step D specifically includes:
step D1: sending the attaching structure into a vacuum cavity of ICP etching equipment;
step D2: and carrying out physical pressure on the attaching structure through the vacuum cavity, wherein the physical pressure comprises mechanical pressure and vacuum pressure.
Therefore, the bonding degree and the overall flatness between the silicon wafer and the transparent substrate are better optimized through mechanical pressing and vacuum pressure pressing.
Further, the step D1 specifically includes:
step D11: fixing the attaching structure in a tray of ICP etching equipment;
step D12: and conveying the tray with the attaching structure into the vacuum cavity.
Therefore, the attaching structure is integrally fixed so as to ensure the subsequent pressing effect.
Further, the step D11 specifically includes:
placing the attaching structure into a substrate hole groove of a quartz lower tray;
and covering the upper cover plate of the aluminum ingot on the quartz lower tray, and fixing the attaching structure in the quartz lower tray.
In a practical process, an ICP etching apparatus, model test of coriolis 300L, may be used when the substrate is pressurized.
As shown in fig. 3, the substrate is firstly put into a hole groove of a substrate of a quartz lower tray and then is covered into an upper cover plate of an aluminum ingot to fix the substrate;
and conveying the tray with the substrate into a vacuum cavity, wherein the physical pressure application in the cavity can be realized, and the mechanical pressure and the vacuum pressure are used for applying pressure, so that the substrate laminating degree is better, and the whole pressure application process range is 5-10 min.
After the step is completed, the surface of the bonding substrate with the flatness ranging from 50 um to 100um can be obtained (the flatness test result of Nikon steppers I8 is utilized), and the substrate flatness manufacturing process requirement of Nikon G/I Line lithography equipment can be basically met.
Further, the step C specifically includes:
step C1: placing the attaching structure on a hot plate device for heating; wherein the temperature of the hot plate is set to be 90-160 ℃, and the heating time is 5-15 min.
Further, the step C specifically includes:
step C2: and (5) placing the attaching structure in a temperature control device to heat and volatilize bubbles.
In the actual process, the whole attaching structure can be placed on a hot plate or a temperature control device to heat and volatilize bubbles, so that the flatness is optimized.
Taking heating of a hot plate as an example, the bonding structure is placed on a hot plate device, the temperature of the hot plate is set to be 90-160 ℃, and the heating time is 5-15 min, so that the bubble phenomenon in the coating and bonding processes can be relieved.
Further, the step A specifically includes:
a11: placing the silicon substrate on an automatic glue homogenizing machine, and pouring colloidal liquid into the center of the upper surface of the silicon substrate;
a12: controlling the glue homogenizing machine to run for 15s at a rotating speed of 1000-4500 rmp/s to form a gelatinous coating; wherein the thickness of the colloidal coating is 10-100 um.
Further, the step A specifically includes:
a21: the surface of the silicon substrate is uniformly coated with colloidal liquid by hand using a clean cotton swab to form a colloidal coating.
In the actual process, when the surface of the silicon wafer is coated, a proper amount of colloidal liquid can be uniformly coated on the surface of the silicon wafer in an automatic and manual mode.
Taking colloidal liquid such as silicone oil coating as an example, placing a silicon wafer on a gel homogenizing machine, pouring a proper amount of silicone oil into the center above the silicon wafer, running for 15s at 1000-4500 rmp/s, repeating the steps to obtain a coating of 10-100 um, and manually coating the silicone oil on the surface of the silicon wafer by using a clean cotton swab.
Further, before step a, the method further includes:
and cleaning the silicon substrate and the transparent substrate.
In the actual process, in order to ensure the bonding effect, the silicon wafer and the transparent substrate are also required to be cleaned in advance.
As shown in fig. 4, in the embodiment of the invention, the specific process steps of the temporary bonding process of the silicon wafer are as follows:
step one: cleaning a silicon wafer and a glass substrate;
step two: a proper amount of colloidal liquid such as silicone oil, photoresist, bonding glue and the like is coated on the surface of the silicon substrate, and an automatic glue homogenizing machine can be used, and the coating can also be manually carried out;
step three: manually attaching transparent substrates such as clean glass sheets or quartz sheets to a silicon substrate with a coating, wherein the vertical alignment of a notch or a flat edge is required to be ensured;
step four: placing the laminated sheet (silicon wafer and glass sheet) on a hot plate or a temperature control device to volatilize bubbles by heating, and optimizing the flatness;
step five: and placing the heated wafer in vacuum equipment for pressing with low-pressure, so as to better optimize the bonding degree and the overall flatness between the silicon wafer and the glass sheet.
Wherein,
a) The surface coating of the silicon wafer mentioned in the second step can uniformly coat a proper amount of colloidal liquid on the surface of the silicon wafer in an automatic and manual mode;
taking silicon oil as an example, placing a silicon wafer on a glue homogenizing machine, pouring a proper amount of silicon oil into the center above the silicon wafer, running for 15s at 1000-4500 rmp/s, repeating the steps to obtain a coating of 10-100 um, and manually coating the silicon oil on the surface of the silicon wafer by using a clean cotton swab.
b) The substrate mentioned in step four is heated,
taking hot plate heating as an example, the bonded (silicon wafer and glass sheet) substrate is placed on a hot plate device, the temperature of the hot plate is set to be 90-160 ℃, and the heating time is set to be 5-15 min, so that the bubble phenomenon in the coating and bonding processes can be relieved.
c) The substrate mentioned in the fifth step is pressed,
taking ICP etching equipment as an example, a test model is Corial 300L, firstly, a substrate is put into a substrate hole groove of a quartz lower tray, then an aluminum ingot upper cover plate is covered to fix the substrate, the tray with the substrate is conveyed into a vacuum cavity, the inside of the cavity can realize physical pressure including mechanical pressure and vacuum pressure to carry out pressure, so that the substrate laminating degree is better, the whole pressure process range is 5-10 min, the step is completed, the bonded substrate surface with the flatness range of 50-100 um can be obtained (the flatness test result of Nikon stepper I8 is utilized), and the substrate flatness manufacturing process requirement of Nikon G/I Line lithography equipment can be basically met.
In summary, in the embodiment of the invention, the silicon wafer and the transparent substrate such as the glass sheet are temporarily bonded manually, so that the method is beneficial to the process of no bonding equipment and the optical exposure requirement of the transparent substrate in micro-nano research and development processing, the feasibility of the technological route of the process is tested, the bonding equipment is not needed, the research and development cost can be controlled, the flexibility is higher, the cost input is low, the process is simple and convenient, and the practicability is high.
It should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is for clarity only, and that the skilled artisan should recognize that the embodiments may be combined as appropriate to form other embodiments that will be understood by those skilled in the art.
The above list of detailed descriptions is only specific to practical embodiments of the present invention, and is not intended to limit the scope of the present invention, and all equivalent embodiments or modifications that do not depart from the spirit of the present invention should be included in the scope of the present invention.
Claims (6)
1. A method for temporarily bonding silicon wafers, comprising:
step A: uniformly coating colloidal liquid on the surface of the silicon substrate to form a colloidal coating;
and (B) step (B): manually attaching a transparent substrate to the silicon substrate with the colloidal coating, and ensuring alignment of the transparent substrate and the silicon substrate to form an attaching structure;
step C: heating the attaching structure and volatilizing bubbles;
step D: placing the heated attaching structure in vacuum equipment, and applying pressure by using low-pressure;
the step D specifically comprises the following steps:
step D1: sending the attaching structure into a vacuum cavity of ICP etching equipment;
step D2: the bonding structure is subjected to physical pressure through the vacuum cavity, wherein the physical pressure comprises mechanical pressure and vacuum pressure;
the step D1 specifically comprises the following steps:
step D11: fixing the attaching structure in a tray of the ICP etching equipment;
step D12: conveying the tray with the attaching structure into the vacuum cavity;
step D11 specifically includes:
placing the attaching structure into a substrate hole groove of a quartz lower tray;
covering an aluminum ingot upper cover plate on the quartz lower tray, and fixing the attaching structure in the quartz lower tray;
the step C specifically comprises the following steps:
step C1: placing the attaching structure on a hot plate device for heating; wherein the temperature of the hot plate is set to be 90-160 ℃, and the heating time is set to be 5-15 min.
2. The method for temporarily bonding silicon wafers according to claim 1, wherein step C specifically comprises:
step C2: and placing the attaching structure in a temperature control device to heat and volatilize bubbles.
3. The method for temporarily bonding silicon wafers according to claim 1, wherein step a specifically comprises:
a11: placing the silicon substrate on an automatic glue homogenizing machine, and pouring colloidal liquid into the center of the upper surface of the silicon substrate;
a12: controlling the glue homogenizing machine to run for 15 seconds at a rotating speed of 1000-4500 rmp/s to form the colloidal coating; wherein the thickness of the colloidal coating is 10-100 um.
4. The method for temporarily bonding silicon wafers according to claim 1, wherein step a specifically comprises:
a21: and (3) manually and uniformly coating the colloidal liquid on the surface of the silicon substrate by using a clean cotton swab to form the colloidal coating.
5. The method for temporarily bonding a silicon wafer according to claim 1, wherein the colloidal liquid is silicone oil or a photoresist or a bonding adhesive.
6. The method of temporary bonding of silicon wafers according to claim 1, wherein prior to step a, the method further comprises:
and cleaning the silicon substrate and the transparent substrate.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010061004A1 (en) * | 2008-11-28 | 2010-06-03 | Thin Materials Ag | Bonding method |
| WO2015009801A1 (en) * | 2013-07-16 | 2015-01-22 | Dow Corning Corporation | Bonded wafer system and method for bonding and de-bonding thereof |
| CN104637824A (en) * | 2013-11-08 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | Temporary bonding and dissociation technology method for silicon wafer |
| WO2016090636A1 (en) * | 2014-12-12 | 2016-06-16 | 浙江中纳晶微电子科技有限公司 | Temporary bonding and separation method for wafers |
| CN106206382A (en) * | 2016-08-30 | 2016-12-07 | 浙江中纳晶微电子科技有限公司 | The processing method that flake workpiece is bonded temporarily |
-
2021
- 2021-07-30 CN CN202110867527.4A patent/CN113716519B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010061004A1 (en) * | 2008-11-28 | 2010-06-03 | Thin Materials Ag | Bonding method |
| WO2015009801A1 (en) * | 2013-07-16 | 2015-01-22 | Dow Corning Corporation | Bonded wafer system and method for bonding and de-bonding thereof |
| CN104637824A (en) * | 2013-11-08 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | Temporary bonding and dissociation technology method for silicon wafer |
| WO2016090636A1 (en) * | 2014-12-12 | 2016-06-16 | 浙江中纳晶微电子科技有限公司 | Temporary bonding and separation method for wafers |
| CN106206382A (en) * | 2016-08-30 | 2016-12-07 | 浙江中纳晶微电子科技有限公司 | The processing method that flake workpiece is bonded temporarily |
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| CN113716519A (en) | 2021-11-30 |
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Address after: 215000 floors 1 and 2, building 7C, Changshu advanced manufacturing science and Technology Park, No. 2 Jianye Road, Yushan high tech Zone, Changshu, Suzhou, Jiangsu Applicant after: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. Address before: 215000 Room 102, building 2, Kechuang Park, Changshu Economic and Technological Development Zone (No. 11, Sihai Road), Suzhou, Jiangsu Applicant before: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. |
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