CN108615700A - A kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate - Google Patents
A kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate Download PDFInfo
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- CN108615700A CN108615700A CN201810386259.2A CN201810386259A CN108615700A CN 108615700 A CN108615700 A CN 108615700A CN 201810386259 A CN201810386259 A CN 201810386259A CN 108615700 A CN108615700 A CN 108615700A
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 230000008569 process Effects 0.000 title claims abstract description 27
- 230000002441 reversible effect Effects 0.000 claims abstract description 55
- 238000012546 transfer Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000011161 development Methods 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 11
- 238000007731 hot pressing Methods 0.000 claims abstract description 6
- 238000006303 photolysis reaction Methods 0.000 claims abstract description 6
- 238000000197 pyrolysis Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000011982 device technology Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 239000011265 semifinished product Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of organic bonding shifting process method of slim solar cell rigid and flexible substrate, it includes：Step 1, rigidity transfer：Solar cell wafer and the temporary support coated with reversible adhesion layer are overlapped, bound by hot pressing, the rigidity transfer of solar cell wafer is completed；Step 2, slim solar cell is made；Step 3, flexible transfer：After rigidly shifting, after slim solar cell completes, pass through photodissociation or pyrolysis reversible adhesion layer so that the adhesion strength of reversible adhesion layer drastically drops to temporary support and is easily peeled off, temporary support is removed, the flexible transfer of slim solar cell is completed.The process processing procedure of the present invention is simple, high, at low cost etc. without limitation and existing solar cell device technology good compatibility, reliability to support substrate material, rigidity transfer thickness control reaches wafer scale level, flexibility transfer is nondestructively peeling, is very suitable for solar cell and other semiconductors are thinned, slim or flexible device development and production.
Description
Technical field
The invention belongs to slim solar cell preparing technical fields, are related to a kind of slim solar cell rigid-flexible substrate
Organic bonding shifting process method.
Background technology
With the development of space technology, lighting, flexibility, can take down the exhibits be solar cell for space use paroxysm exhibition necessarily become
Gesture, therefore, there is an urgent need to reduce the weight of solar cell.
Meanwhile conventional rigid battery due to flexibility it is poor, cannot achieve conformal attachment, greatly limit its application, be based on
This, slimming, the flexibility of solar cell become photovoltaic art research hotspot.But since solar cell for space use making is related to cleaning
Multiple processing procedures such as burn into photoetching, development, plated film, and thin battery material own mechanical intensity is poor, self-supporting energy force difference, it is difficult
To adapt to semiconductor technology processing procedure, therefore, it is necessary to the wafer before being thinned or semi-finished product battery are transferred to rigidity or mechanical strength
In high support substrate, after waiting for thinned or device technology processing procedure, support substrate is removed, ensures that slim sun electricity
The functions reliably and efficiently development or production in pond.
Conventional process：First, carrying out rigid-flexible by the way of double-sided metal bonding and multiple substrate etching or stripping
Transfer, " high-specific-power GaAs ties flexible thin-film solar cell to the CN201610062060.5 as disclosed in the universe irradiation electricity of Yangzhou more
And preparation method thereof ", its shortcoming is that requiring support substrate high, complex process, of high cost etc.；Second is that using organic adhesive
Agent directly binds together support substrate and solar cell, after battery device technique completes, is slid using mechanical heat
Mode support substrate is removed, the CN201610855761.4 as disclosed in middle electric 18th research institute " a kind of will be outside GaAs
Prolong the method that layer is transferred to organic flexible substrate ", which is suitable only for substrate mechanical reduction or corrosion thinning support, it is difficult to full
The manufacture of semiconductor such as foot cleaning, photoetching, development, organic stripping, while gallium arsenide cells are difficult to carry out hot nitrogen centrifugation in the process
It is dry, and prior art poor compatibility, and complex process.
Present invention process processing procedure is simple, compatible without limitation and existing solar cell device technology to support substrate material
It is good, reliability is high, at low cost etc., rigidity shifts thickness control and reaches wafer scale level, and flexibility transfer is nondestructively peeling, is fitted very much
It closes solar cell and other semiconductors is thinned, slim or flexible device development and production.
Invention content
The purpose of the present invention is to provide a kind of slim organic bonding shifting process sides of solar cell rigid-flexible substrate
Method, to solve, thin battery material own mechanical intensity is poor, self-supporting energy force difference, it is difficult to adapt to semiconductor technology processing procedure etc. and ask
Topic provides rigid-soft transfer techniques support for the preparation or production of slim solar cell.
In order to achieve the above object, the present invention provides a kind of slim organic bondings of solar cell rigid-flexible substrate to turn
Process is moved, is comprised the steps of：
Step 1, rigidity transfer：Solar cell wafer and the temporary support coated with reversible adhesion layer are superimposed together,
It is bound together by hot pressing, completes the rigidity transfer of solar cell wafer；
Step 2, slim solar cell is made；
Step 3, flexible transfer：It is reversible viscous by photodissociation or pyrolysis after slim solar cell completes after rigidly shifting
Connecing layer so that the adhesion strength of reversible adhesion layer drastically drops to temporary support and is easily peeled off, and removes temporary support,
Complete the flexible transfer of slim solar cell.
Preferably, the temporary support is arbitrary in transparent electron level or nontransparent rigidity or flexible support substrate
The transparent rigid support substrate of one kind, preferably electron level.
Preferably, the reversible adhesion layer is acidproof, alkaline-resisting, resistant to acetone and ethanol-tolerant, and bond at a certain temperature strong
It spends reversible.
Preferably, the reversible adhesion layer is in 160 ~ 360 DEG C of temperature ranges, adhesion strength is reversible.
Preferably, the reversible adhesion layer be temperature-sensitive reversible adhesion layer, photosensitive reversible adhesion layer, temperature-sensitive reversible adhesion layer with
Any one in the composite layer that photosensitive reversible adhesion layer combines.
Preferably, the reversible adhesion layer thickness is 5 μm ~ 50 μm.
Preferably, in step 1, it is 150 ~ 350 DEG C that temperature is bound in hot pressing, and pressure is 2 ~ 15kg/cm2, the time be 5 ~
30min, vacuum degree are better than（It is not less than）10-1MBar, reversible adhesion layer total thickness deviation（total thickness
Variation, abridge TTV)）Less than 2%, to ensure the consistency of thickness of reversible adhesion layer.
Preferably, step 2 also includes：
Step 2.1, the solar cell wafer after rigidity transfer is immersed in etchant solution, by solar cell material from solar cell
It is stripped down in growth substrates or growth substrates is thinned to by design thickness using mechanical reduction；
Step 2.2, it using processing procedures such as photoetching, development, cleaning burn into vacuum coatings, completes slim solar cell and makes.
Preferably, in step 3, the wavelength of the light source of photodissociation reversible adhesion layer is less than 400nm, and light intensity is more than 100mJ/
cm2。
Preferably, the operative temperature of the pyrolysis reversible adhesion layer is 160 ~ 360 DEG C.
The process of the present invention includes rigidity transfer and its making between solar cell wafer and temporary support
Slim solar cell and temporary support between flexible transfer method, manufacturing process is simple, to support substrate material without
Limitation, with existing solar cell device technology good compatibility, reliability it is high, at low cost etc., rigidity shifts thickness control and reaches crystalline substance
Circle grade is horizontal, and flexibility transfer is nondestructively peeling, is very suitable for solar cell and other semiconductors are thinned, slim or flexible device is ground
System and production.
Description of the drawings
Fig. 1 is the rigidity transfer cross-sectional view that embodiment of the present invention provides.
Fig. 2 is the flexible transfer cross-sectional view that embodiment of the present invention provides.
Fig. 3 is the slim solar cell and its cross-sectional view that embodiment of the present invention provides.
Specific implementation mode
Have to a kind of slim solar cell rigid-flexible substrate proposed by the present invention below in conjunction with the drawings and specific embodiments
Switch closes shifting process method and is described in further detail.According to following explanation and claims, advantages of the present invention and spy
Sign will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio, only to side
Just the purpose of the embodiment of the present invention, is lucidly aided in illustrating.
Embodiment 1
By taking upside-down mounting gallium arsenide epitaxy piece makes thin film gallium arsenide solar cell as an example, the specific organic bonding of rigid-flexible substrate turns
It is as follows to move technique：
1, rigidity transfer
1）The upside-down mounting gallium arsenide epitaxy piece 1 that extension is bonded（Solar cell wafer, the solar cell wafer is by solar cell material
12, lower electrode 42, the upper surface epitaxial substrate 11 being arranged on solar cell material 12 and the following table being arranged under lower electrode 42
Face epitaxial substrate 13 is constituted）Being coated with same size can comprising temperature-sensitive reversible adhesion layer 21, the compound of photosensitive reversible adhesion layer 22
The temporary support 3 of inverse adhesive linkage（Glass support substrate）It is superimposed together, temperature-sensitive reversible adhesion layer 21 is outside lower surface
Prolong substrate 13, as shown in Figure 1.Wherein, compound reversible adhesion layer thickness is 25 μm.The reversible adhesion layer is acidproof, alkaline-resisting, resistance to
Acetone and ethanol-tolerant, and at a certain temperature（Such as 160 ~ 360 DEG C）Adhesion strength is reversible.
2）It is bound by hot pressing and realizes rigidity transfer, binding temperature is 180 DEG C, pressure 5kg/cm2, the time is
10min, vacuum degree are better than 1 × 10-2MBar, reversible adhesion layer overall thickness tolerance are 1%.
2, device technology makes
1）Upside-down mounting gallium arsenide epitaxy piece after further rigidity is shifted immerses in phosphoric acid and hydrogen peroxide mixed solution, erosion removal
Then GaAs upper surface epitaxial substrate 11 uses phosphoric acid or hydrochloric acid solution to further corrode, exposes gaas cap sublayer, go
Ionized water（QDR）Hot nitrogen is dried after cleaning, completes the stripping of upside-down mounting gallium arsenide solar cell material 12；
2）The processing procedures such as photoetching, development, cleaning burn into vacuum coating are further used, top electrode 41 and antireflective coating 43 are completed
Preparation, manufactured device architecture is as shown in Figure 2.
3, flexible transfer
1）Further use wavelength for 350nm, light intensity is more than 130mJ/cm2Laser light glass support substrate scanning it is reversible
Adhesive linkage, the photosensitive reversible adhesion layer 22 of photodissociation under laser action realize glass support substrate desquamation；
2）Further, the solution rotatings such as polar organic solvent, acetone, alcohol, QDR cleaning extension bonded substrate surface is used successively
Temperature-sensitive reversible adhesion layer 21, slim gallium arsenide solar cell after cleaning completed slim by high temperature alloy, scribing, test
The flexible transfer and preparation of gallium arsenide solar cell.
Embodiment 2
By taking upside-down mounting gallium arsenide epitaxy piece makes thin film gallium arsenide solar cell as an example, the specific organic bonding of rigid-flexible substrate turns
It is as follows to move technique：
1, rigidity transfer
1）The upside-down mounting gallium arsenide epitaxy piece 1 of extension bonding is served as a contrast with the temporary support for being coated with temperature-sensitive reversible adhesion layer 21 with size
Bottom 3（Optional arbitrary rigid support substrate）It is superimposed together, temperature-sensitive reversible adhesion layer 21 is close to lower surface epitaxial substrate 13, temperature-sensitive
21 thickness of reversible adhesion layer is 20 μm；
2）It is bound by hot pressing and realizes rigidity transfer, binding temperature is 180 DEG C, pressure 5kg/cm2, time 10min, very
Reciprocal of duty cycle is better than 1 × 10-2MBar, reversible adhesion layer overall thickness tolerance are 1%.
2, device technology makes
1）Upside-down mounting gallium arsenide epitaxy piece after further rigidity is shifted immerses in phosphoric acid and hydrogen peroxide mixed solution, erosion removal
Then GaAs upper surface epitaxial substrate 11 uses phosphoric acid or hydrochloric acid solution to further corrode, exposes gaas cap sublayer, go
Ionized water（QDR）Hot nitrogen is dried after cleaning, completes the stripping of upside-down mounting gallium arsenide solar cell material 12；
2）The processing procedures such as photoetching, development, cleaning burn into vacuum coating are further used, top electrode 41 and antireflective coating 43 are completed
Preparation.
3, flexible transfer
1）Hot plate that heating temperature reaches 250 DEG C or infrared laser or other infrared lights is further used to heat support substrate,
The adhesion strength that reversible adhesion layer 21 is reduced under heat effect, realizes temporary support 3 and slim gallium arsenide solar cell
Separation；
2）Further, the solution rotatings such as polar organic solvent, acetone, alcohol, QDR cleaning extension bonded substrate surface is used successively
Temperature-sensitive reversible adhesion layer 21, slim gallium arsenide solar cell after cleaning completed slim by high temperature alloy, scribing, test
The flexible transfer and preparation of gallium arsenide solar cell.
In conclusion a kind of slim organic bonding shifting process method of solar cell rigid-flexible substrate of the present invention, packet
The slim solar cell for including the rigidity transfer between solar cell wafer and temporary support and its making is served as a contrast with temporary support
Flexible transfer method between bottom.The rigidity transfer is the temporary support and the sun for being coated with machine reversible adhesion layer
The process of cell wafers binding, the flexible transfer are to lead to the slim solar cell to complete after rigidly shifting
Light or heat effect are crossed in reversible adhesion layer so that reversible adhesion layer adhesion strength drastically drops to temporary support and be easy to shell
From.Present invention process processing procedure is simple, to support substrate material without limitation, with existing solar cell device technology good compatibility, can
High, at low cost etc. by property, rigidity shifts thickness control and reaches wafer scale level, and flexibility transfer is nondestructively peeling, is very suitable for too
Positive electricity pond and other semiconductors are thinned, slim or flexible device development and production.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of organic bonding shifting process method of slim solar cell rigid-flexible substrate, which is characterized in that this method includes
Following steps：
Step 1, rigidity transfer：Solar cell wafer and the temporary support coated with reversible adhesion layer are overlapped, heat is passed through
The rigidity transfer of solar cell wafer is completed in pressure binding；
Step 2, slim solar cell is made；
Step 3, flexible transfer：After slim solar cell completes, pass through photodissociation or pyrolysis reversible adhesion layer so that reversible
The adhesion strength of adhesive linkage drastically drops to temporary support and is easily peeled off, and removes temporary support, completes the slim sun
The flexible transfer of battery.
2. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In the transparent rigid support substrate of the temporary support selection electron level.
3. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
Acidproof, alkaline-resisting, resistant to acetone and ethanol-tolerant in, the reversible adhesion layer, and adhesion strength is reversible at a certain temperature.
4. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as claimed in claim 3, feature exist
In for the reversible adhesion layer in 160 ~ 360 DEG C of temperature ranges, adhesion strength is reversible.
5. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In the reversible adhesion layer is temperature-sensitive reversible adhesion layer, photosensitive reversible adhesion layer, temperature-sensitive reversible adhesion layer and photosensitive reversible adhesion
Layer constitute composite layer in any one.
6. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In the reversible adhesion layer thickness is 5 μm ~ 50 μm.
7. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In in step 1, it is 150 ~ 350 DEG C that temperature is bound in hot pressing, and pressure is 2 ~ 15kg/cm2, the time is 5 ~ 30min, and vacuum degree is not low
In 10-1MBar, reversible adhesion layer total thickness deviation are less than 2%.
8. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In step 2 also includes：
Step 2.1, the solar cell wafer after rigidity transfer is immersed in etchant solution, by solar cell material from solar cell
It is stripped down in growth substrates or growth substrates is thinned to by design thickness using mechanical reduction；
Step 2.2, it using processing procedures such as photoetching, development, cleaning burn into vacuum coatings, completes slim solar cell and makes.
9. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature exist
In in step 3, the wavelength of the light source of photodissociation reversible adhesion layer is less than 400nm, and light intensity is more than 100mJ/cm2。
10. the slim organic bonding shifting process method of solar cell rigid-flexible substrate as described in claim 1, feature
It is, in step 3, the operative temperature of pyrolysis reversible adhesion layer is 160 ~ 360 DEG C.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638108A (en) * | 2018-12-05 | 2019-04-16 | 上海空间电源研究所 | Stratosphere flight device is directed to the assembly encapsulation method of warpage flexible solar cell piece |
| CN110155999A (en) * | 2019-05-28 | 2019-08-23 | 淮阴师范学院 | The transfer method and two-dimensional material of a kind of two-dimensional material and its application |
| CN111326467A (en) * | 2019-10-16 | 2020-06-23 | 中国电子科技集团公司第五十五研究所 | Flexible inorganic semiconductor film and preparation method thereof |
| CN111326591A (en) * | 2018-11-29 | 2020-06-23 | 东泰高科装备科技有限公司 | Flexible solar cell and preparation method thereof |
| CN111613693A (en) * | 2019-02-22 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible solar cell and manufacturing method thereof |
| CN114823975A (en) * | 2022-04-20 | 2022-07-29 | 深圳市新旗滨科技有限公司 | Flexible thin-film solar cell and preparation method thereof |
| FR3123499A1 (en) * | 2021-05-31 | 2022-12-02 | Aledia | Method for manufacturing an electronic device comprising a bonding phase |
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| CN102625951A (en) * | 2009-08-27 | 2012-08-01 | 康宁股份有限公司 | Debonding a glass substrate from carrier using ultrasonic wave |
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| CN110155999A (en) * | 2019-05-28 | 2019-08-23 | 淮阴师范学院 | The transfer method and two-dimensional material of a kind of two-dimensional material and its application |
| CN111326467A (en) * | 2019-10-16 | 2020-06-23 | 中国电子科技集团公司第五十五研究所 | Flexible inorganic semiconductor film and preparation method thereof |
| FR3123499A1 (en) * | 2021-05-31 | 2022-12-02 | Aledia | Method for manufacturing an electronic device comprising a bonding phase |
| WO2022254127A1 (en) * | 2021-05-31 | 2022-12-08 | Aledia | Method for manufacturing an electronic device comprising a bonding phase |
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