CN102812519A - 具有错误校正的复合半导体存储设备 - Google Patents

具有错误校正的复合半导体存储设备 Download PDF

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Publication number
CN102812519A
CN102812519A CN201180014974XA CN201180014974A CN102812519A CN 102812519 A CN102812519 A CN 102812519A CN 201180014974X A CN201180014974X A CN 201180014974XA CN 201180014974 A CN201180014974 A CN 201180014974A CN 102812519 A CN102812519 A CN 102812519A
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CN
China
Prior art keywords
compound semiconductor
semiconductor memory
memory device
interface
data
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN201180014974XA
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English (en)
Chinese (zh)
Inventor
金镇祺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
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Mosaid Technologies Inc
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Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Publication of CN102812519A publication Critical patent/CN102812519A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
    • H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
    • H03M13/61—Aspects and characteristics of methods and arrangements for error correction or error detection, not provided for otherwise
    • H03M13/611—Specific encoding aspects, e.g. encoding by means of decoding
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Probability & Statistics with Applications (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN201180014974XA 2010-03-22 2011-03-02 具有错误校正的复合半导体存储设备 Pending CN102812519A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31613810P 2010-03-22 2010-03-22
US61/316,138 2010-03-22
PCT/CA2011/000229 WO2011116454A1 (en) 2010-03-22 2011-03-02 Composite semiconductor memory device with error correction

Publications (1)

Publication Number Publication Date
CN102812519A true CN102812519A (zh) 2012-12-05

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Family Applications (1)

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CN201180014974XA Pending CN102812519A (zh) 2010-03-22 2011-03-02 具有错误校正的复合半导体存储设备

Country Status (8)

Country Link
US (2) US9098430B2 (https=)
EP (1) EP2550661A4 (https=)
JP (1) JP2013522779A (https=)
KR (1) KR20120137416A (https=)
CN (1) CN102812519A (https=)
CA (1) CA2791931A1 (https=)
TW (1) TW201201008A (https=)
WO (1) WO2011116454A1 (https=)

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CN104217765A (zh) * 2014-09-09 2014-12-17 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN105378690A (zh) * 2013-04-30 2016-03-02 惠普发展公司，有限责任合伙企业 存储器节点差错校正
CN105719703A (zh) * 2014-12-17 2016-06-29 爱思开海力士有限公司 存储系统及其操作方法
CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
US10141954B2 (en) 2013-12-30 2018-11-27 Sanechips Technology Co., Ltd. Data error correcting method and device, and computer storage medium
CN109582493A (zh) * 2017-09-29 2019-04-05 英特尔公司 用于减少非易失性存储器系统中的静默数据错误的方法和装置
CN110858128A (zh) * 2018-08-23 2020-03-03 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110942799A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 有多种纠错功能的存储器器件和存储器系统及其操作方法
CN111052088A (zh) * 2017-10-25 2020-04-21 英韧科技(上海)有限公司 快速访问非易失性存储器设备的系统和方法
CN111081308A (zh) * 2018-10-19 2020-04-28 奈奎斯特半导体有限公司 用于混合非易失性存储系统的系统和方法
CN111382000A (zh) * 2018-12-25 2020-07-07 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法

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CN102812519A (zh) * 2010-03-22 2012-12-05 莫塞德技术公司 具有错误校正的复合半导体存储设备
KR20130012737A (ko) * 2011-07-26 2013-02-05 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이를 포함하는 반도체 시스템
US9697147B2 (en) * 2012-08-06 2017-07-04 Advanced Micro Devices, Inc. Stacked memory device with metadata management
US8922243B2 (en) 2012-12-23 2014-12-30 Advanced Micro Devices, Inc. Die-stacked memory device with reconfigurable logic
US8972826B2 (en) 2012-10-24 2015-03-03 Western Digital Technologies, Inc. Adaptive error correction codes for data storage systems
US9021339B2 (en) 2012-11-29 2015-04-28 Western Digital Technologies, Inc. Data reliability schemes for data storage systems
US9059736B2 (en) * 2012-12-03 2015-06-16 Western Digital Technologies, Inc. Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme
US9214963B1 (en) 2012-12-21 2015-12-15 Western Digital Technologies, Inc. Method and system for monitoring data channel to enable use of dynamically adjustable LDPC coding parameters in a data storage system
US9026888B2 (en) * 2012-12-21 2015-05-05 Intel Corporation Method, system and apparatus for providing access to error correction information
US9201777B2 (en) 2012-12-23 2015-12-01 Advanced Micro Devices, Inc. Quality of service support using stacked memory device with logic die
US9065722B2 (en) 2012-12-23 2015-06-23 Advanced Micro Devices, Inc. Die-stacked device with partitioned multi-hop network
US9135185B2 (en) 2012-12-23 2015-09-15 Advanced Micro Devices, Inc. Die-stacked memory device providing data translation
US9170948B2 (en) 2012-12-23 2015-10-27 Advanced Micro Devices, Inc. Cache coherency using die-stacked memory device with logic die
KR102084553B1 (ko) * 2013-01-03 2020-03-04 삼성전자주식회사 메모리 시스템
US20150012801A1 (en) * 2013-07-03 2015-01-08 Chih-Nan YEN Method of detecting and correcting errors with bch and ldpc engines for flash storage systems
US9286948B2 (en) 2013-07-15 2016-03-15 Advanced Micro Devices, Inc. Query operations for stacked-die memory device
JP6131207B2 (ja) 2014-03-14 2017-05-17 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102221752B1 (ko) * 2014-03-20 2021-03-02 삼성전자주식회사 메모리 장치의 프로그램 방법 및 이를 포함하는 데이터 독출 방법
US20150311920A1 (en) * 2014-04-25 2015-10-29 Agency For Science, Technology And Research Decoder for a memory device, memory device and method of decoding a memory device
US10002043B2 (en) * 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
US10002044B2 (en) 2014-08-19 2018-06-19 Samsung Electronics Co., Ltd. Memory devices and modules
KR102214556B1 (ko) * 2014-08-19 2021-02-09 삼성전자주식회사 메모리 장치 및 모듈
US10209895B2 (en) 2016-02-18 2019-02-19 Toshiba Memory Corporation Memory system
KR102688433B1 (ko) * 2017-05-07 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
KR102688423B1 (ko) * 2017-07-05 2024-07-26 에스케이하이닉스 주식회사 메모리 장치, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법
US10545860B2 (en) * 2017-08-10 2020-01-28 Samsung Electronics Co., Ltd. Intelligent high bandwidth memory appliance
US11210167B2 (en) * 2019-10-28 2021-12-28 Intel Corporation Memory wordline isolation for improvement in reliability, availability, and scalability (RAS)
US11537326B2 (en) * 2020-09-10 2022-12-27 Western Digital Technologies, Inc. Relocation flow using CbA technology
US12572412B2 (en) 2024-06-11 2026-03-10 Macronix International Co., Ltd. Managing error corrections for data storage systems

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CN101527171A (zh) * 2009-04-17 2009-09-09 成都市华为赛门铁克科技有限公司 一种多通道并行纠错的闪存控制方法和装置

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105378690A (zh) * 2013-04-30 2016-03-02 惠普发展公司，有限责任合伙企业 存储器节点差错校正
US9823986B2 (en) 2013-04-30 2017-11-21 Hewlett Packard Enterprise Development Lp Memory node error correction
CN105378690B (zh) * 2013-04-30 2019-02-26 慧与发展有限责任合伙企业 存储器节点差错校正
US10141954B2 (en) 2013-12-30 2018-11-27 Sanechips Technology Co., Ltd. Data error correcting method and device, and computer storage medium
CN104217765B (zh) * 2014-09-09 2017-11-24 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN104217765A (zh) * 2014-09-09 2014-12-17 武汉新芯集成电路制造有限公司 闪存芯片操作时间的测量方法
CN105719703B (zh) * 2014-12-17 2020-10-20 爱思开海力士有限公司 存储系统及其操作方法
CN105719703A (zh) * 2014-12-17 2016-06-29 爱思开海力士有限公司 存储系统及其操作方法
CN106598499A (zh) * 2016-12-14 2017-04-26 深圳市中博睿存科技有限公司 一种基于fpga的分布式文件系统架构
CN109582493A (zh) * 2017-09-29 2019-04-05 英特尔公司 用于减少非易失性存储器系统中的静默数据错误的方法和装置
CN111052088A (zh) * 2017-10-25 2020-04-21 英韧科技(上海)有限公司 快速访问非易失性存储器设备的系统和方法
CN111052088B (zh) * 2017-10-25 2024-03-08 英韧科技股份有限公司 快速访问非易失性存储器设备的系统和方法
CN110858128A (zh) * 2018-08-23 2020-03-03 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110858128B (zh) * 2018-08-23 2023-04-18 慧荣科技股份有限公司 数据存储装置及其共享控制器中存储器的方法
CN110942799A (zh) * 2018-09-21 2020-03-31 三星电子株式会社 有多种纠错功能的存储器器件和存储器系统及其操作方法
CN111081308A (zh) * 2018-10-19 2020-04-28 奈奎斯特半导体有限公司 用于混合非易失性存储系统的系统和方法
CN111081308B (zh) * 2018-10-19 2023-08-15 英韧科技(上海)有限公司 用于混合非易失性存储系统的系统和方法
CN111382000A (zh) * 2018-12-25 2020-07-07 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法
CN111382000B (zh) * 2018-12-25 2024-01-12 瑞萨电子株式会社 半导体装置、存储器控制器与存储器访问方法

Also Published As

Publication number Publication date
US9411680B2 (en) 2016-08-09
US20110231739A1 (en) 2011-09-22
US20150309867A1 (en) 2015-10-29
WO2011116454A1 (en) 2011-09-29
CA2791931A1 (en) 2011-09-29
US9098430B2 (en) 2015-08-04
EP2550661A1 (en) 2013-01-30
JP2013522779A (ja) 2013-06-13
TW201201008A (en) 2012-01-01
KR20120137416A (ko) 2012-12-20
EP2550661A4 (en) 2013-10-09

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Application publication date: 20121205