CN102810562A - 一种半导体器件及其制造方法 - Google Patents
一种半导体器件及其制造方法 Download PDFInfo
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- CN102810562A CN102810562A CN2011101443499A CN201110144349A CN102810562A CN 102810562 A CN102810562 A CN 102810562A CN 2011101443499 A CN2011101443499 A CN 2011101443499A CN 201110144349 A CN201110144349 A CN 201110144349A CN 102810562 A CN102810562 A CN 102810562A
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CN201110144349.9A CN102810562B (zh) | 2011-05-31 | 2011-05-31 | 一种半导体器件及其制造方法 |
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CN102810562A true CN102810562A (zh) | 2012-12-05 |
CN102810562B CN102810562B (zh) | 2015-07-22 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN112466936A (zh) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | 一种高压igbt器件及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07193232A (ja) * | 1993-12-27 | 1995-07-28 | Nissan Motor Co Ltd | 電導度変調型トランジスタ |
CN1439172A (zh) * | 2000-05-05 | 2003-08-27 | 国际整流器公司 | 用于穿通非外延型绝缘栅双极型晶体管的缓冲区的氢注入 |
US20070080407A1 (en) * | 2005-10-06 | 2007-04-12 | Sanken Electric Co., Ltd. | Insulated gate bipolar transistor |
CN102034815A (zh) * | 2009-09-29 | 2011-04-27 | 比亚迪股份有限公司 | 一种igbt及其制作方法 |
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2011
- 2011-05-31 CN CN201110144349.9A patent/CN102810562B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07193232A (ja) * | 1993-12-27 | 1995-07-28 | Nissan Motor Co Ltd | 電導度変調型トランジスタ |
CN1439172A (zh) * | 2000-05-05 | 2003-08-27 | 国际整流器公司 | 用于穿通非外延型绝缘栅双极型晶体管的缓冲区的氢注入 |
US20070080407A1 (en) * | 2005-10-06 | 2007-04-12 | Sanken Electric Co., Ltd. | Insulated gate bipolar transistor |
CN102034815A (zh) * | 2009-09-29 | 2011-04-27 | 比亚迪股份有限公司 | 一种igbt及其制作方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241348A (zh) * | 2014-08-28 | 2014-12-24 | 西安电子科技大学 | 一种低导通电阻的SiC IGBT及其制备方法 |
CN112466936A (zh) * | 2020-12-21 | 2021-03-09 | 厦门芯一代集成电路有限公司 | 一种高压igbt器件及其制备方法 |
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CN102810562B (zh) | 2015-07-22 |
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Effective date of registration: 20191202 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |