CN102801902B - 信号传输装置和摄像显示系统 - Google Patents
信号传输装置和摄像显示系统 Download PDFInfo
- Publication number
- CN102801902B CN102801902B CN201210152327.1A CN201210152327A CN102801902B CN 102801902 B CN102801902 B CN 102801902B CN 201210152327 A CN201210152327 A CN 201210152327A CN 102801902 B CN102801902 B CN 102801902B
- Authority
- CN
- China
- Prior art keywords
- transistor
- signal
- transmitting apparatus
- unit
- signal transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008054 signal transmission Effects 0.000 title abstract description 35
- 238000003384 imaging method Methods 0.000 title description 109
- 239000003990 capacitor Substances 0.000 claims abstract description 29
- 230000005611 electricity Effects 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000004048 modification Effects 0.000 description 40
- 238000012986 modification Methods 0.000 description 40
- 238000006243 chemical reaction Methods 0.000 description 39
- 230000003068 static effect Effects 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 16
- 238000009825 accumulation Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101150105133 RRAD gene Proteins 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000013056 hazardous product Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/30—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming X-rays into image signals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/04—Display protection
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/06—Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011114827A JP5724623B2 (ja) | 2011-05-23 | 2011-05-23 | 信号伝達装置および撮像表示システム |
| JP2011-114827 | 2011-05-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102801902A CN102801902A (zh) | 2012-11-28 |
| CN102801902B true CN102801902B (zh) | 2017-05-17 |
Family
ID=47200858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210152327.1A Expired - Fee Related CN102801902B (zh) | 2011-05-23 | 2012-05-16 | 信号传输装置和摄像显示系统 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8970463B2 (enExample) |
| JP (1) | JP5724623B2 (enExample) |
| KR (1) | KR101951486B1 (enExample) |
| CN (1) | CN102801902B (enExample) |
| TW (1) | TWI545717B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102000738B1 (ko) | 2013-01-28 | 2019-07-23 | 삼성디스플레이 주식회사 | 정전기 방지 회로 및 이를 포함하는 표시 장치 |
| JP2014195243A (ja) * | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP6202840B2 (ja) * | 2013-03-15 | 2017-09-27 | キヤノン株式会社 | 放射線撮像装置、放射線撮像システム、放射線撮像装置の制御方法及びプログラム |
| CN104090436B (zh) * | 2014-06-26 | 2017-03-22 | 京东方科技集团股份有限公司 | 一种阵列基板的栅极行驱动电路及显示装置 |
| CN109285510B (zh) * | 2018-09-11 | 2021-04-02 | 重庆惠科金渝光电科技有限公司 | 一种显示器、显示装置和接地电阻调节方法 |
| CN112509467B (zh) * | 2020-11-27 | 2022-03-08 | 合肥维信诺科技有限公司 | 显示基板、静电释放装置及方法 |
| JP7735742B2 (ja) * | 2021-09-09 | 2025-09-09 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| US20250174176A1 (en) * | 2022-02-17 | 2025-05-29 | Jade Bird Display (shanghai) Limited | Electrostatic discharge protection system of a micro device |
| JP2024090479A (ja) * | 2022-12-23 | 2024-07-04 | キヤノン株式会社 | 光電変換装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101196662A (zh) * | 2006-11-10 | 2008-06-11 | 三星电子株式会社 | 液晶显示装置及其驱动方法 |
| CN101763817A (zh) * | 2008-12-24 | 2010-06-30 | 乐金显示有限公司 | 包含静电保护电路的平板显示器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337722B1 (en) * | 1997-08-07 | 2002-01-08 | Lg.Philips Lcd Co., Ltd | Liquid crystal display panel having electrostatic discharge prevention circuitry |
| GB0119299D0 (en) * | 2001-08-08 | 2001-10-03 | Koninkl Philips Electronics Nv | Electrostatic discharge protection for pixellated electronic device |
| JP4000096B2 (ja) * | 2003-08-04 | 2007-10-31 | 株式会社東芝 | Esd保護回路 |
| JP2006065284A (ja) * | 2004-07-26 | 2006-03-09 | Seiko Epson Corp | 発光装置及び電子機器 |
| JP5252817B2 (ja) * | 2006-03-29 | 2013-07-31 | キヤノン株式会社 | 撮像装置、放射線撮像装置、撮像装置の駆動方法、放射線撮像システムおよび撮像装置の製造方法 |
| JP4142066B2 (ja) * | 2006-06-01 | 2008-08-27 | エプソンイメージングデバイス株式会社 | 電気光学装置および電子機器 |
| JP2008233417A (ja) * | 2007-03-19 | 2008-10-02 | Toshiba Matsushita Display Technology Co Ltd | マトリクスアレイ基板、及びこれを用いた平面表示装置 |
| TWI357146B (en) * | 2008-04-07 | 2012-01-21 | Chunghwa Picture Tubes Ltd | Flat display panel |
| JP2009302092A (ja) * | 2008-06-10 | 2009-12-24 | Epson Imaging Devices Corp | 固体撮像装置 |
| KR101255289B1 (ko) * | 2009-12-31 | 2013-04-15 | 엘지디스플레이 주식회사 | 액정표시장치 |
-
2011
- 2011-05-23 JP JP2011114827A patent/JP5724623B2/ja active Active
-
2012
- 2012-05-03 TW TW101115862A patent/TWI545717B/zh not_active IP Right Cessation
- 2012-05-10 US US13/468,403 patent/US8970463B2/en not_active Expired - Fee Related
- 2012-05-15 KR KR1020120051311A patent/KR101951486B1/ko not_active Expired - Fee Related
- 2012-05-16 CN CN201210152327.1A patent/CN102801902B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101196662A (zh) * | 2006-11-10 | 2008-06-11 | 三星电子株式会社 | 液晶显示装置及其驱动方法 |
| CN101763817A (zh) * | 2008-12-24 | 2010-06-30 | 乐金显示有限公司 | 包含静电保护电路的平板显示器 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI545717B (zh) | 2016-08-11 |
| KR101951486B1 (ko) | 2019-02-22 |
| KR20120130700A (ko) | 2012-12-03 |
| CN102801902A (zh) | 2012-11-28 |
| JP2012244053A (ja) | 2012-12-10 |
| JP5724623B2 (ja) | 2015-05-27 |
| US8970463B2 (en) | 2015-03-03 |
| US20120299804A1 (en) | 2012-11-29 |
| TW201304110A (zh) | 2013-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160912 Address after: Kanagawa Applicant after: SONY semiconductor solutions Address before: Tokyo, Japan Applicant before: Sony Corp |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170517 Termination date: 20210516 |