CN102800777B - Zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and method for manufacturing same - Google Patents
Zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and method for manufacturing same Download PDFInfo
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Abstract
The invention discloses a zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and a method for manufacturing the same. The ZnO-TCL semiconductor luminescent device comprises a substrate and a semiconductor epitaxy laminate grown on the substrate; the semiconductor epitaxy laminate comprises an N-type layer, a multi-quantum wells (MQWS) layer, a P-type layer and a ZnO-TCL layer from bottom to top sequentially; after wet etching, an N-type metal electrode is also evaporated on the upper surface of the N-type layer; a P-type metal electrode is evaporated on the ZnO-TCL layer and comprises an embedded part; the embedded part is embedded in the ZnO-TCL layer; and the embedded depth of the embedded part is smaller than the height of the ZnO-TCL layer. A weak acid wet etching process is adopted, and controllable high-precision and low-cost etching is realized; a part of ZnO-TCL layer is etched off, so that the section of the ZnO-TCL layer is trapezoidal or bowl-shaped, a surface, which contacts the evaporated electrode, of the ZnO-TCL layer is wide, and adhesive force is high; and because part of ZnO-TCL layer is kept, integrity of a current expanding layer is guaranteed, and a current expanding effect can be improved.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly a kind of ZnO-TCL light emitting semiconductor device and manufacture method thereof.
background technology
The present invention is directed to one of study hotspot of current GaN base light-emitting diode---ZnO-TCL technology is carried out.The realization of power-type GaN base light-emitting diode performance is mainly divided into three aspects, the first, the GaN base light emitting diode epitaxial structure of growing high-quality, and this determines the internal quantum efficiency of light-emitting diode; Its two, light abstraction technique, this technology improves the important technology of device external quantum efficiency and reliability; And the electrically conducting transparent membrane preparation technology of high conductivity and high light transmission rate is one of effective way improving light emitting diode light extraction; 3rd, chip cooling technology.
That current application and research is maximum is indium tin oxide ITO-TCL, its technology maturation, stable performance.Therefore it is widely used at photoelectric fields such as solar cell, light-emitting diode (LED), semiconductor laser (LD), liquid crystal display (LCD).But ITO material has following weak point: (1) In is a kind of rare metal, and its reserves and output are all limited, and cost is higher; (2) In is poisonous, and it is heavy metal element and pollutes the environment; (3) ITO less stable in reducing atmosphere.The novel transparent conductive film finding alternative ITO becomes study hotspot.ZnO-TCL have nontoxic, be easy to the features such as low-temperature epitaxy, cost are low, good stability, ZnO-TCL is expected to the transparent electrode material of new generation becoming alternative ITO-TCL.
At present, the electrode fabrication process of light-emitting diode chip for backlight unit generally can be divided into two kinds: one is directly at TCL upper surface electrode evaporation, and in general, this kind of way electrode adhesion is not strong, often easily comes off, affects device stability; In addition, in subsequent encapsulating process, this way easily causes transparency electrode mechanical damage.Another kind of way first the TCL layer under metal electrode is etched away electrode evaporation again; This way destroys the integrality of transparency electrode, affects current expansion performance, and reduces device light emitting power.Therefore, develop a kind of new technology, make it to take into account the tack of metal electrode, key that reliability, current expansion are exploitation high efficiency semiconductor luminescent device.
And in order to realize above-mentioned new technology, the etching problem of ZnO-TCL must be solved.Concerning ZnO-based transparent conductive film, the controlled etched technique of wet method always is a difficult problem, is amphoteric oxide mainly due to ZnO, and acid-base reaction is too strong, and sideetching is serious, affects etching precision, and etching speed is fast, restive.And adopt dry corrosion process, as ICP etching etc., its cost is too high, and this is the tube device manufacture of ZnO-TCL light-emitting diode and the universal significant challenge faced.
Summary of the invention
Goal of the invention of the present invention is the technical deficiency for existing light emitting semiconductor device, provides a kind of ZnO-TCL light emitting semiconductor device and the manufacture method thereof of taking into account current expansion, metal electrode tack and reliability.
For achieving the above object, the technical solution used in the present invention is:
There is provided a kind of ZnO-TCL light emitting semiconductor device, comprising having: substrate and the semiconductor epitaxial lamination of growth on substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N-type layer, MQWS layer, P-type layer and ZnO-TCL layer; After wet etching, the upper surface of described N-type layer also evaporation has N-type metal electrode; On described ZnO-TCL layer, evaporation has P type metal electrode, and described P type metal electrode comprises insertion part, is embedded in ZnO-TCL layer in described insertion part, and the embedded degree of depth of described insertion part is less than the height of this ZnO-TCL layer.
Preferably, the cross section of described P type metal electrode insertion part is trapezoidal or bowl-shape.
Preferably, described P type metal electrode comprises protuberance, and described protuberance is placed in the upper surface of insertion part, and described protuberance stretches out in the upper surface of described ZnO-TCL layer.
Preferably, described ZnO-TCL Rotating fields is the extrinsic zinc oxide of doping of single layer structure.
Preferably, described ZnO-TCL Rotating fields is the extrinsic zinc oxide of doping of laminated construction.
A preparation method for ZnO-TCL light emitting semiconductor device, comprises the following steps:
1), after substrate 1 being cleaned, adopt MOCVD epitaxy semiconductor laminated, comprise N-type layer, MQWS layer, P-type layer successively; Take out sample, again clean and dry, then putting into MOCVD device extension ZnO-TCL layer;
2) by wet etching, the ZnO-TCL layer 5 of side is etched to P-type layer 4, recycling ICP dry etching is etched to N-type layer 2, and this side N-type layer 2 is for defining N-type metal electrode 6;
3) gluing photoetching process is utilized to define P type metal electrode region and pattern on ZnO-TCL layer, utilize weak acid solution wet etching ZnO-TCL layer, control etch rate, make etching depth be less than the height of ZnO-TCL layer, and at this region evaporation P type metal electrode;
4) utilize gluing photoetching process in above-mentioned steps 2) described in definition N-type metal electrode region and pattern, N-type layer region, and at this region evaporation N-type metal electrode.
Preferably, step 2) described in wet etching use solution be the salts of weak acid such as acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride.
The present invention, relative to prior art, has following beneficial effect: in order to solve ZnO wet-etching technology, suppress sideetching to control etch rate simultaneously, the present invention adopts weak acid wet-etching technology, realizes controlled high-precision low cost etching; Meanwhile, etch away a part of ZnO-TCL layer, make its cross section the trapezoidal or bowl-shape shape such as be, the electrode contact surface that evaporation is got on is wider, and adhesive force is stronger; In addition, owing to remaining part ZnO-TCL layer, ensure that the integrality of current extending, current expansion effect can be improved, increase its light emitting power, thus make device more reliable and more stable; Moreover, this simple and reliable process.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention 1;
Fig. 2 is the structural representation of the embodiment of the present invention 2;
Fig. 3 is the structural representation of the embodiment of the present invention 3.
Embodiment
Be described in further detail goal of the invention of the present invention below in conjunction with the drawings and specific embodiments, embodiment can not repeat one by one at this, but therefore embodiments of the present invention are not defined in following examples.Unless stated otherwise, the present invention adopt material and processing method be the art conventional material and processing method.Namely the individual layer ZnO-TCL layer of different doping or the ZnO-TCL layer of various difference doping laminated construction is applied to, in addition, the scope of application of the present invention not circumscribed, except can be used for light emitting semiconductor device (LED), also can be used in the semiconductor components and devices of other similar techniques.
Embodiment 1
As shown in Figure 1, a kind of light emitting semiconductor device, comprising having: substrate 1 and the semiconductor epitaxial lamination of growth on substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N-type layer 2, MQWS layer 3, P-type layer 4 and ZnO-TCL layer 5; After over etching, the upper surface of N-type layer 2 also evaporation has N-type metal electrode 6; On ZnO-TCL layer 5, evaporation has P type metal electrode 7, P type metal electrode 7 to comprise insertion part 71, be embedded in ZnO-TCL layer, and the embedded degree of depth of insertion part 71 is less than the height of this ZnO-TCL layer in insertion part 71.
The cross section of P type metal electrode 7 insertion part is trapezoidal or bowl-shape.
P type metal electrode 7 comprises protuberance 72, and described protuberance 72 is placed in the upper surface of insertion part 71, and protuberance 72 stretches out in the upper surface of ZnO-TCL layer.
(5 structures are the extrinsic zinc oxide of doping of single layer structure to ZnO-TCL layer.
ZnO-TCL layer 5 structure is the extrinsic zinc oxide of doping of laminated construction.
A preparation method for light emitting semiconductor device, comprises the following steps:
1), after substrate 1 being cleaned, adopt MOCVD epitaxy semiconductor laminated, comprise N-type layer 2, MQWS layer 3, P-type layer 4 successively; Take out sample, again clean and dry, then putting into MOCVD device extension ZnO-TCL layer 5;
2) by wet etching, the ZnO-TCL layer 5 of side is etched to P-type layer 4, recycling ICP dry etching is etched to N-type layer 2, and this side N-type layer 2 is for defining N-type metal electrode 6;
3) gluing photoetching process is utilized to define P type metal electrode 7 region and pattern on ZnO-TCL layer 5, utilize weak acid solution wet etching ZnO-TCL layer 5, control etch rate, make etching depth be less than the height of ZnO-TCL layer 5, and at this region evaporation P type metal electrode 7;
4) utilize gluing photoetching process in above-mentioned steps 2) described in definition N-type metal electrode 6 region and pattern, N-type layer 2 region, and at this region evaporation N-type metal electrode 6.
Step 2) in wet etching use weak acid solution be acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride salt of weak acid.
Be embedded in ZnO-TCL layer 5 to make P type metal electrode 7, utilize glacial acetic acid and water to carry out wet etching ZnO-TCL layer 5 by a certain percentage, etch period is controlled, when reserve part ZnO-TCL, form TCL groove structure, rear evaporation P type metal electrode 7.Substrate 1 material is Sapphire Substrate.
Above-mentioned ZnO-TCL layer 5 is made up of single layer structure ZnO:Al or ZnO:Ga or ZnO:In layer 5.1.
The manufacture method of this light emitting semiconductor device is as follows:
After Sapphire Substrate being cleaned by organic and inorganic solution, adopt MOCVD epitaxy semiconductor laminated, comprise N-type layer 2, MQWS layer 3, P-type layer 4 successively.Take out sample, again utilize organic and inorganic solution clean and dry, then put into MOCVD device extension ZnO-TCL layer 5.
Adopt gluing photoetching process to make the ZnO-TCL layer 5 of side expose outside, other ZnO-TCL layers 5 are blocked by glue.Carry out wet etching after utilizing certain proportion glacial acetic acid to mix with water, etch away ZnO-TCL layer 5, the P-type layer 4 exposed, recycling ICP dry etching is etched to N-type layer 2.
Adopt gluing photoetching process at ZnO-TCL layer 5 upper surface definition P type metal electrode 7 region and pattern, utilize certain proportion glacial acetic acid and water to carry out wet etching, the ZnO-TCL layer 5 that etch away parts exposes, make to be corroded ZnO-TCL layer 5 in depression form.
Adopt gluing photoetching process at ZnO-TCL layer 5 upper surface definition P type metal electrode 7 region and pattern, simultaneously also at N-type layer 2 upper surface definition N-type metal electrode 6 region and pattern.Utilize the electrode zone electrode evaporation metal that evaporator is exposing, form electrode.
Embodiment 2
The present embodiment is except following characteristics, and other are all identical with embodiment 1: as shown in Figure 2, and in order to the operating voltage of more effective reduction device, its ZnO-TCL layer 5 adopts laminated construction ZnO:Al5.2/ZnO:Ga5.1/ZnO:Al5.2; And when defining P type metal electrode 7 region and pattern, utilize certain proportion glacial acetic acid and water to carry out wet etching, etching ZnO-TCL layer 5 to ZnO:Ga layer 5.1.
Embodiment 3
The present embodiment is except following characteristics; other are all identical with embodiment 1: as shown in Figure 3; the present embodiment is in order to the operating voltage of more effective reduction device; improve the light extraction efficiency of device simultaneously; its ZnO-TCL layer 5 adopts laminated construction ZnO:Ga5.1/ZnO5.3; by changing growthing process parameter in growth course, ZnO layer 5.3 is made to present nanometer linear structure; When definition P type metal electrode 7 region and pattern, certain proportion glacial acetic acid and water is utilized to carry out wet etching, etching ZnO-TCL layer 5 to ZnO:Ga layer 5.1.
Above-described embodiment is only preferred embodiment of the present invention, is not used for limiting practical range of the present invention.Namely all equalizations done according to content of the present invention change and modify, all by the claims in the present invention scope required for protection is contained.
Claims (7)
1. a ZnO-TCL light emitting semiconductor device, comprising having: substrate (1) and the semiconductor epitaxial lamination of growth on substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N-type layer (2), MQWS layer (3), P-type layer (4) and ZnO-TCL layer (5); It is characterized in that: after over etching, the upper surface of described N-type layer (2) also evaporation has N-type metal electrode (6); The upper evaporation of described ZnO-TCL layer (5) has P type metal electrode (7), described P type metal electrode (7) comprises insertion part (71), described insertion part is embedded in ZnO-TCL layer in (71), and the embedded degree of depth of described insertion part (71) is less than the height of this ZnO-TCL layer.
2. ZnO-TCL light emitting semiconductor device according to claim 1, is characterized in that: the cross section of described P type metal electrode (7) insertion part is trapezoidal or bowl-shape.
3. ZnO-TCL light emitting semiconductor device according to claim 1, it is characterized in that: described P type metal electrode (7) comprises protuberance (72), described protuberance (72) is placed in the upper surface of insertion part (71), and described protuberance (72) stretches out in the upper surface of described ZnO-TCL layer.
4. ZnO-TCL light emitting semiconductor device according to claim 1, is characterized in that: described ZnO-TCL layer (5) structure is the extrinsic zinc oxide of doping of single layer structure.
5. ZnO-TCL light emitting semiconductor device according to claim 1, is characterized in that: described ZnO-TCL layer (5) structure is the extrinsic zinc oxide of doping of laminated construction.
6. a preparation method for ZnO-TCL light emitting semiconductor device, is characterized in that comprising the following steps:
1), after substrate (1) being cleaned, adopt MOCVD epitaxy semiconductor laminated, comprise N-type layer (2), MQWS layer (3), P-type layer (4) successively; Take out sample, again clean and dry, then putting into MOCVD device extension ZnO-TCL layer (5);
2) by wet etching, the ZnO-TCL layer (5) of side is etched to P-type layer (4), recycling ICP dry etching is etched to N-type layer (2), and this side N-type layer (2) is for defining N-type metal electrode (6);
3) gluing photoetching process is utilized to define P type metal electrode (7) region and pattern on ZnO-TCL layer (5), utilize weak acid solution wet etching ZnO-TCL layer (5), control etch rate, etching depth is made to be less than the height of ZnO-TCL layer (5), and in this region evaporation P type metal electrode (7);
4) utilize gluing photoetching process in above-mentioned steps 2) described in definition N-type metal electrode (6) region and pattern, N-type layer (2) region, and in this region evaporation N-type metal electrode (6).
7. the preparation method of ZnO-TCL light emitting semiconductor device according to claim 6, is characterized in that: step 2) described in wet etching use solution be acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride salt of weak acid.
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| WO2016135024A1 (en) * | 2015-02-27 | 2016-09-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component, method for producing an electrical contact and method for producing a semiconductor component |
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| JP3767863B2 (en) * | 2003-12-18 | 2006-04-19 | ローム株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| JP2010067824A (en) * | 2008-09-11 | 2010-03-25 | Asahi Kasei Electronics Co Ltd | Etching method of zinc oxide-based material |
| US20110186120A1 (en) * | 2009-11-05 | 2011-08-04 | Guardian Industries Corp. | Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same |
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| WO2016135024A1 (en) * | 2015-02-27 | 2016-09-01 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component, method for producing an electrical contact and method for producing a semiconductor component |
| US10153400B2 (en) | 2015-02-27 | 2018-12-11 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device, method of producing an electrical contact and method of producing a semiconductor device |
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