CN102800777A - Zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and method for manufacturing same - Google Patents
Zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and method for manufacturing same Download PDFInfo
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Abstract
The invention discloses a zinc oxide (ZnO)-transistor-coupled logic (TCL) semiconductor luminescent device and a method for manufacturing the same. The ZnO-TCL semiconductor luminescent device comprises a substrate and a semiconductor epitaxy laminate grown on the substrate; the semiconductor epitaxy laminate comprises an N-type layer, a multi-quantum wells (MQWS) layer, a P-type layer and a ZnO-TCL layer from bottom to top sequentially; after wet etching, an N-type metal electrode is also evaporated on the upper surface of the N-type layer; a P-type metal electrode is evaporated on the ZnO-TCL layer and comprises an embedded part; the embedded part is embedded in the ZnO-TCL layer; and the embedded depth of the embedded part is smaller than the height of the ZnO-TCL layer. A weak acid wet etching process is adopted, and controllable high-precision and low-cost etching is realized; a part of ZnO-TCL layer is etched off, so that the section of the ZnO-TCL layer is trapezoidal or bowl-shaped, a surface, which contacts the evaporated electrode, of the ZnO-TCL layer is wide, and adhesive force is high; and because part of ZnO-TCL layer is kept, integrity of a current expanding layer is guaranteed, and a current expanding effect can be improved.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly a kind of ZnO-TCL light emitting semiconductor device and manufacturing approach thereof.
Background technology
The present invention is directed to one of research focus of present GaN based light-emitting diode---the ZnO-TCL technology is carried out.The realization of power-type GaN based light-emitting diode performance mainly is divided into three aspects, and the first, the GaN based light-emitting diode epitaxial structure of growing high-quality, the internal quantum efficiency of this decision light-emitting diode; Its two, the light abstraction technique, this technology is to improve the important technology of device external quantum efficiency and reliability; And the electrically conducting transparent membrane preparation technology of high conductivity and high light transmission rate is one of effective way that improves the light emitting diode light extraction; The 3rd, the chip cooling technology.
Using and study maximum at present is indium tin oxide ITO-TCL, its technology maturation, stable performance.So it has obtained using widely at solar cell, light-emitting diode (LED), semiconductor laser (LD), LCD photoelectric fields such as (LCD).But the ITO material has following weak point: (1) In is a kind of rare metal, and its reserves and output are all limited, and cost is higher; (2) In is poisonous, and it is heavy metal element and pollutes the environment; (3) ITO less stable in reducing atmosphere.The novel transparent conductive film of seeking alternative ITO becomes the research focus.That ZnO-TCL has is nontoxic, be easy to low-temperature epitaxy, characteristics such as cost is low, good stability, and ZnO-TCL is expected to become the transparent electrode material of new generation that substitutes ITO-TCL.
At present, the electrode of light emitting diode processing technology generally can be divided into two kinds: a kind of is directly at TCL upper surface electrode evaporation, and in general, this kind way electrode adhesion is not strong, often comes off easily, influences device stability; In addition, in follow-up packaging technology, this way causes the transparency electrode mechanical damage easily.Another kind of way is earlier the TCL layer under the metal electrode to be etched away electrode evaporation again; This way has been destroyed the integrality of transparency electrode, influences the current expansion performance, and has reduced the device light emitting power.Therefore, develop a kind of new technology, tack, reliability, the current expansion property that makes it to take into account metal electrode is the key of exploitation high efficiency semiconductor luminescent device.
And, must solve the etching problem of ZnO-TCL in order to realize above-mentioned new technology.Concerning the zno-based transparent conductive film, the controlled etched technology of wet method always is a difficult problem, is that amphoteric oxide and acid-base reaction are too strong mainly due to ZnO, and sideetching is serious, influences etching precision, and etching speed is fast, and is restive.And the employing dry corrosion process, like the ICP etching etc., its cost is too high, and this is the tube device manufacturing of ZnO-TCL light-emitting diode and popularizes the main challenge that faces.
Summary of the invention
Goal of the invention of the present invention is to the technical deficiency of existing light emitting semiconductor device, and a kind of ZnO-TCL light emitting semiconductor device and manufacturing approach thereof of taking into account current expansion property, metal electrode tack and reliability is provided.
For realizing the foregoing invention purpose, the technical scheme that the present invention adopts is:
A kind of ZnO-TCL light emitting semiconductor device is provided, comprising having: substrate and be grown in the semiconductor epitaxial lamination on the substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N type layer, MQWS layer, P type layer and ZnO-TCL layer; Through behind the wet etching, the upper surface of said N type layer also vapor deposition has N type metal electrode; Vapor deposition has P type metal electrode on the said ZnO-TCL layer, and said P type metal electrode comprises insertion part, be embedded in the said insertion part in the ZnO-TCL layer, and the embedded degree of depth of said insertion part is less than the height of this ZnO-TCL layer.
Preferably, the cross section of said P type metal electrode insertion part is trapezoidal or bowl-shape.
Preferably, said P type metal electrode comprises protuberance, and said protuberance places the upper surface of insertion part, and said protuberance stretches out in the upper surface of said ZnO-TCL layer.
Preferably, the said ZnO-TCL layer structure extrinsic zinc oxide of doping that is single layer structure.
Preferably, the said ZnO-TCL layer structure extrinsic zinc oxide of doping that is laminated construction.
A kind of preparation method of ZnO-TCL light emitting semiconductor device may further comprise the steps:
1) substrate 1 is cleaned after, adopt MOCVD epitaxial semiconductor lamination, comprise N type layer, MQWS layer, P type layer successively; Take out sample, clean once more and dry, put into MOCVD equipment extension ZnO-TCL layer then;
2) through wet etching, the ZnO-TCL layer 5 of a side is etched to P type layer 4, utilize the ICP dry etching that it is etched to N type layer 2 again, this side N type layer 2 is used to define N type metal electrode 6;
3) utilize the gluing photoetching process on the ZnO-TCL layer, to define P type metal electrode zone and pattern; Utilize weak acid solution wet etching ZnO-TCL layer; Control etch rate, make the height of etching depth less than the ZnO-TCL layer, and in this zone vapor deposition P type metal electrode;
4) utilize the gluing photoetching process in above-mentioned steps 2) described N type layer region definition N type metal electrode zone and pattern, and in this zone vapor deposition N type metal electrode.
Preferably, the solution that wet etching step 2) uses is salts of weak acid such as acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride.
The present invention has following beneficial effect with respect to prior art: in order to solve the ZnO wet-etching technology, to suppress sideetching and control etch rate simultaneously, the present invention adopts the weak acid wet-etching technology, realizes controlled high-precision low cost etching; Simultaneously, etch away a part of ZnO-TCL layer, make its cross section trapezoidal or bowl-shape shape such as be, the electrode contact surface that vapor deposition is got on is wider, and adhesive force is stronger; In addition,, guaranteed the integrality of current extending, can improve the current expansion effect, increased its light emitting power, thereby make device more reliable and more stable owing to kept part ZnO-TCL layer; Moreover, this simple and reliable process.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1;
Fig. 2 is the structural representation of the embodiment of the invention 2;
Fig. 3 is the structural representation of the embodiment of the invention 3.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment goal of the invention of the present invention is done to describe in further detail, embodiment can not give unnecessary details at this one by one, but therefore execution mode of the present invention is not defined in following examples.Unless stated otherwise, the material and the processing method of the present invention's employing are present technique field conventional material and processing method.Promptly be applied to the different individual layer ZnO-TCL layers that mix or the ZnO-TCL layer of various different doping laminated construction; In addition; The scope of application of the present invention is constrained not, except that can be used for light emitting semiconductor device (LED), also can be used in the semiconductor components and devices of other similar technologies.
As shown in Figure 1, a kind of light emitting semiconductor device, comprising having: substrate 1 and be grown in the semiconductor epitaxial lamination on the substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N type layer 2, MQWS layer 3, P type layer 4 and ZnO-TCL layer 5; Behind over etching, the upper surface of N type layer 2 also vapor deposition has N type metal electrode 6; Vapor deposition has P type metal electrode 7 on the ZnO-TCL layer 5, and P type metal electrode 7 comprises insertion part 71, be embedded in the insertion part 71 in the ZnO-TCL layer, and the embedded degree of depth of insertion part 71 is less than the height of this ZnO-TCL layer.
The cross section of P type metal electrode 7 insertion parts is trapezoidal or bowl-shape.
P type metal electrode 7 comprises protuberance 72, and said protuberance 72 places the upper surface of insertion part 71, and protuberance 72 stretches out in the upper surface of ZnO-TCL layer.
(5 structures are the extrinsic zinc oxide of the doping of single layer structure to the ZnO-TCL layer.
ZnO-TCL layer 5 structure are the extrinsic zinc oxide of doping of laminated construction.
A kind of preparation method of light emitting semiconductor device may further comprise the steps:
1) substrate 1 is cleaned after, adopt MOCVD epitaxial semiconductor lamination, comprise N type layer 2, MQWS layer 3, P type layer 4 successively; Take out sample, clean once more and dry, put into MOCVD equipment extension ZnO-TCL layer 5 then;
2) through wet etching, the ZnO-TCL layer 5 of a side is etched to P type layer 4, utilize the ICP dry etching that it is etched to N type layer 2 again, this side N type layer 2 is used to define N type metal electrode 6;
3) utilize the gluing photoetching process on ZnO-TCL layer 5, to define P type metal electrode 7 zones and pattern; Utilize weak acid solution wet etching ZnO-TCL layer 5; Control etch rate, make the height of etching depth less than ZnO-TCL layer 5, and in this zone vapor deposition P type metal electrode 7;
4) utilize the gluing photoetching process in above-mentioned steps 2) described N type layer 2 zone definitions N type metal electrode 6 zones and pattern, and in this zone vapor deposition N type metal electrode 6.
Step 2) weak acid solution that wet etching uses in is acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride salt of weak acid.
For P type metal electrode 7 is embedded in the ZnO-TCL layer 5; Utilize glacial acetic acid and water to carry out wet etching ZnO-TCL layer 5 by a certain percentage, etch period is controlled, under the situation of reserve part ZnO-TCL; Form the TCL groove structure, back vapor deposition P type metal electrode 7.Substrate 1 material is a Sapphire Substrate.
Above-mentioned ZnO-TCL layer 5 is made up of single layer structure ZnO:Al or ZnO:Ga or ZnO:In layer 5.1.
The manufacturing approach of this light emitting semiconductor device is following:
After through organic and inorganic solution Sapphire Substrate being cleaned, adopt MOCVD epitaxial semiconductor lamination, comprise N type layer 2, MQWS layer 3, P type layer 4 successively.Take out sample, utilize organic once more and inorganic solution cleaning and oven dry, put into MOCVD equipment extension ZnO-TCL layer 5 then.
Adopt the gluing photoetching process that the ZnO-TCL layer 5 of one side is exposed outside, other ZnO-TCL layers 5 are blocked by glue.Carry out wet etching after utilizing the certain proportion glacial acetic acid and water mixing, etch away the ZnO-TCL layer 5, the P type layer 4 that expose, utilize the ICP dry etching that it is etched to N type layer 2 again.
Adopt the gluing photoetching process at ZnO-TCL layer 5 upper surface definition P type metal electrode 7 zones and pattern, utilize certain proportion glacial acetic acid and water to carry out wet etching, erode the ZnO-TCL layer 5 that part is exposed, make the ZnO-TCL layer 5 that is corroded be the depression form.
Adopt the gluing photoetching process at ZnO-TCL layer 5 upper surface definition P type metal electrode 7 zones and pattern, simultaneously also at N type layer 2 upper surface definition N type metal electrode 6 zones and pattern.Utilize evaporator at the electrode zone electrode evaporation metal that exposes, form electrode.
Present embodiment is except that following characteristics, and other are all identical with embodiment 1: as shown in Figure 2, for the operating voltage of more effective reduction device, its ZnO-TCL layer 5 adopts laminated construction ZnO:Al5.2/ZnO:Ga5.1/ZnO:Al5.2; And when definition P type metal electrode 7 zones and pattern, utilize certain proportion glacial acetic acid and water to carry out wet etching, etching ZnO-TCL layer 5 to ZnO:Ga layer 5.1.
Present embodiment is except that following characteristics; Other are all identical with embodiment 1: as shown in Figure 3; Present embodiment improves the light extraction efficiency of device simultaneously for the operating voltage of more effective reduction device, and its ZnO-TCL layer 5 adopts laminated construction ZnO:Ga5.1/ZnO5.3; Through changing growthing process parameter, make ZnO layer 5.3 present the nanometer linear structure in the growth course; When definition P type metal electrode 7 zones and pattern, utilize certain proportion glacial acetic acid and water to carry out wet etching, etching ZnO-TCL layer 5 to ZnO:Ga layer 5.1.
The foregoing description is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention.Be that all equalizations of doing according to content of the present invention change and modification, all contained by claim of the present invention scope required for protection.
Claims (7)
1. ZnO-TCL light emitting semiconductor device; Comprising having: substrate (1) and be grown in the semiconductor epitaxial lamination on the substrate, this semiconductor epitaxial lamination comprises from lower to upper successively: N type layer (2), MQWS layer (3), P type layer (4) and ZnO-TCL layer (5); It is characterized in that: behind over etching, the upper surface of said N type layer (2) also vapor deposition has N type metal electrode (6); Said ZnO-TCL layer (5) is gone up vapor deposition has P type metal electrode (7); Said P type metal electrode (7) comprises insertion part (71); Said insertion part is embedded in the ZnO-TCL layer in (71), and the embedded degree of depth of said insertion part (71) is less than the height of this ZnO-TCL layer.
2. ZnO-TCL light emitting semiconductor device according to claim 1 is characterized in that: the cross section of said P type metal electrode (7) insertion part is trapezoidal or bowl-shape.
3. ZnO-TCL light emitting semiconductor device according to claim 1; It is characterized in that: said P type metal electrode (7) comprises protuberance (72); Said protuberance (72) places the upper surface of insertion part (71), and said protuberance (72) stretches out in the upper surface of said ZnO-TCL layer.
4. ZnO-TCL light emitting semiconductor device according to claim 1 is characterized in that: said ZnO-TCL layer (5) structure is the extrinsic zinc oxide of doping of single layer structure.
5. ZnO-TCL light emitting semiconductor device according to claim 1 is characterized in that: said ZnO-TCL layer (5) structure is the extrinsic zinc oxide of doping of laminated construction.
6. the preparation method of a ZnO-TCL light emitting semiconductor device is characterized in that may further comprise the steps:
1) substrate (1) is cleaned after, adopt MOCVD epitaxial semiconductor lamination, comprise N type layer (2), MQWS layer (3), P type layer (4) successively; Take out sample, clean once more and dry, put into MOCVD equipment extension ZnO-TCL layer (5) then;
2) through wet etching, the ZnO-TCL layer (5) of a side is etched to P type layer (4), utilize the ICP dry etching that it is etched to N type layer (2) again, this side N type layer (2) is used to define N type metal electrode (6);
3) utilize the gluing photoetching process on ZnO-TCL layer (5), to define P type metal electrode (7) zone and pattern; Utilize weak acid solution wet etching ZnO-TCL layer (5); The control etch rate; Make the height of etching depth less than ZnO-TCL layer (5), and at this zone vapor deposition P type metal electrode (7);
4) utilize the gluing photoetching process in above-mentioned steps 2) described N type layer (2) zone definitions N type metal electrode (6) zone and pattern, and at this zone vapor deposition N type metal electrode (6).
7. the preparation method of ZnO-TCL light emitting semiconductor device according to claim 6 is characterized in that: step 2) described in the solution that uses of wet etching be salts of weak acid such as acetic acid, carbonic acid, hydrosulphuric acid, boric acid or chloride.
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| CN108183117A (en) * | 2017-12-26 | 2018-06-19 | 深圳市华星光电技术有限公司 | Micro-led display panel and preparation method thereof |
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| CN1894807A (en) * | 2003-12-18 | 2007-01-10 | 罗姆股份有限公司 | Semiconductor light-emitting device and method for manufacturing same |
| JP2010067824A (en) * | 2008-09-11 | 2010-03-25 | Asahi Kasei Electronics Co Ltd | Etching method of zinc oxide-based material |
| US20110186120A1 (en) * | 2009-11-05 | 2011-08-04 | Guardian Industries Corp. | Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same |
| WO2011138851A1 (en) * | 2010-05-07 | 2011-11-10 | パナソニック株式会社 | Light emitting diode |
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|---|---|---|---|---|
| CN1894807A (en) * | 2003-12-18 | 2007-01-10 | 罗姆股份有限公司 | Semiconductor light-emitting device and method for manufacturing same |
| JP2010067824A (en) * | 2008-09-11 | 2010-03-25 | Asahi Kasei Electronics Co Ltd | Etching method of zinc oxide-based material |
| US20110186120A1 (en) * | 2009-11-05 | 2011-08-04 | Guardian Industries Corp. | Textured coating with various feature sizes made by using multiple-agent etchant for thin-film solar cells and/or methods of making the same |
| WO2011138851A1 (en) * | 2010-05-07 | 2011-11-10 | パナソニック株式会社 | Light emitting diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108183117A (en) * | 2017-12-26 | 2018-06-19 | 深圳市华星光电技术有限公司 | Micro-led display panel and preparation method thereof |
| WO2019127701A1 (en) * | 2017-12-26 | 2019-07-04 | 深圳市华星光电技术有限公司 | Micro light-emitting diode display panel and manufacturing method therefor |
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