CN102762489A - 盖、其制造方法和由此制成的mems封装体 - Google Patents
盖、其制造方法和由此制成的mems封装体 Download PDFInfo
- Publication number
- CN102762489A CN102762489A CN2009801625515A CN200980162551A CN102762489A CN 102762489 A CN102762489 A CN 102762489A CN 2009801625515 A CN2009801625515 A CN 2009801625515A CN 200980162551 A CN200980162551 A CN 200980162551A CN 102762489 A CN102762489 A CN 102762489A
- Authority
- CN
- China
- Prior art keywords
- plate
- layer
- depression
- lid
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1056—Perforating lamina
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24562—Interlaminar spaces
Abstract
一种用于MEMS器件的盖及其有关制造方法。盖包括:第一板(20),具有相对的第一表面和第二表面(20a,20b),这些表面具有分别设置于其上的第一金属层和第二金属层(21a,21b),其中通腔(200)延伸穿过第一板以及第一金属层和第二金属层;第二板(23),具有相对的第三表面和第四表面(23a,23b);粘合层(22),夹入于第一板的第二表面与第二板的第三表面之间以将第一板和第二板耦合在一起,从而通腔由第二板闭合,由此形成凹陷(200);以及第一导体层(25a),涂覆凹陷的底表面和侧表面(201a,201b)。盖增强对MEMS器件的屏蔽效果。
Description
技术领域
本发明涉及一种盖、其制造方法和由此制作的MEMS(微机电系统)封装体,并且更具体地涉及一种具有金属化凹陷的盖、其制造方法和由此制成的对MEMS具有增强的屏蔽效果的MEMS封装体。
背景技术
MEMS器件(比如麦克风)广泛使用于移动通信设备、音频设备等中。为了实现小型化,通常称为电容式麦克风的用于作为听力辅助单元使用的麦克风在尺寸上减小。然而,其中的换能器是脆弱的且易于受到物理损坏。另外,由于环境可能扰动信号传输,所以必须保护换能器免受光和电磁干扰。另外,只要考虑防止光和电磁干扰,就需要有利的声压以便换能器恰当工作。关于广泛使用的电容式麦克风,请参照图1。
参照图1,常规电容式麦克风包括:第一衬底10、借助导电粘合层13耦合到第一衬底10的导电板11和借助另一导电粘合层13’耦合到导电板11的第二衬底12。第一衬底10包括模具板100和后板101,并且第二衬底12也是这样。听孔102形成于第一衬底10中。半导体芯片14装配于第一衬底10上。此外,在听孔102上方的换能器15装配于第一衬底10上。形成于导电板11中的通腔110不仅为不同声压提供空间而且接纳半导体芯片14和换能器15。
常规电容式麦克风提供由第一衬底10、导电板11的通腔110和第二衬底12限定的保护空间以便隔离半导体芯片14和换能器15并且实现屏蔽效果。然而,导电粘合层13和导电板11在构成上互不相同,因此使电容式麦克风的侧表面的屏蔽效果下降。
因而认为需要克服前述缺点。
发明内容
因此,本发明的目的是在增强对MEMS器件的屏蔽效果的角度提供一种盖、其制造方法和由此制成的MEMS封装体。
根据本发明,提供一种分别如在权利要求1和12中限定的用于在MEMS器件中使用的盖和有关制造方法。
实际上,盖包括:第一板,具有相对的第一表面和第二表面,第一表面具有设置于其上的第一金属层,其中通腔延伸穿过第一板和第一金属层;第二板,具有相对的第三表面和第四表面;粘合层,夹入于第一板的第二表面与第二板的第三表面之间以将第一板和第二板耦合在一起,从而通腔由第二板的第三表面单侧阻隔以便由通腔形成凹陷;以及第一导体层,设置于凹陷的底表面和侧表面上,侧表面与底表面相邻。
另外,描述的用于制造用于MEMS器件的盖的方法包括以下步骤:提供具有第一表面和相对的第二表面的第一板,第一表面上具有初始金属层;对第一板的初始金属层进行粗糙化,从而由初始金属层形成第一金属层;在第一板的第二表面上形成粘合层;形成通腔以穿透第一金属层、第一板和粘合层;提供具有相对的第三表面和第四表面的第二板并且将第二板的第三表面和粘合层耦合在一起,由此单侧覆盖通腔以由通腔形成凹陷,其中凹陷具有底表面和与之相邻的侧表面;在第一金属层上以及凹陷的底表面和侧表面上形成第一导体层。
如在本说明书中公开的那样,增强了盖的屏蔽效果,不仅因为通过耦合相同材料的两个板——第一板和第二板——来形成凹陷,而且因为凹陷的内部容易地由相同层或者层堆叠物(比如第一导体层)覆盖。
附图说明
图1是常规电容式麦克风的横截面图;
图2A至图2L是用于在MEMS器件中使用的盖的一个实施例在后续制造步骤中的横截面图;
图3示出了从图2L的封装体获得的电容式声学换能器的简化框图;以及
图4示出了包括声学换能器的电子设备的简化框图。
具体实施方式
参照图2A,提供具有相对的第一表面和第二表面20a、20b的第一板20。两个初始金属层211形成于第一表面和第二表面20a和20b上。然而,初始金属层211在可任选基础上形成于第一板20的第二表面20b上。
参照图2B,通过蚀刻工艺来粗糙化和打薄第一表面和第二表面20a、20b上的初始金属层211以便从第一表面20a上的初始金属层211形成第一金属层21a,并且从第二表面20b上的初始金属层211形成作为另一金属层的第二金属层21b。
参照图2C和图2D,作为非导电层的粘合层22如图2C中所示形成于第二金属层21b上,然后如图2D中所示贯穿第一金属层21a、第一板20、第二金属层21b和粘合层22形成通腔200。
参照图2E,提供具有相对的第三表面和第四表面23a、23b的第二板23。第三表面和第四表面23a、23b在可任选基础上具有分别形成于其上的第三金属层和第四金属层24a、24b。作为中间金属层的第三金属层24a耦合到粘合层22,从而通腔200在底部上由第二板23闭合,由此形成凹陷201。这样形成的凹陷201具有底表面201a和与之相邻的侧表面201b。第一板20和第二板23由相同材料(比如BT(双马来酰亚胺-三嗪(Bismaleimide-triazine))芯材料或者塑料)制成。
参照图2F,通过电镀工艺或者溅射工艺来形成第一导体层25a以涂覆第一金属层21a和凹陷201的底表面201a和侧表面201b,并且第二导体层25b形成于第四金属层24b上。第一导体层25a的厚度优选地大于10μm。在形成由金属(比如铜)制成的第一导体层和第二导体层25a、25b之前形成种子层(未示出)。种子层用作为用于电镀金属的导电路径并且包括金属、合金和多个沉积金属层。
参照图2G和图2H,抗蚀剂层26如图2G中所示形成于第一导体层25a和凹陷200上方,然后如图2H中所示去除第二导体层25b和第四金属层24b。
参照图2I和图2J,如图2I中所示去除抗蚀剂层26,然后由镍、钯、金、锡、不锈钢或者其组合制成的表面处理层27如图2J中所示形成于第一导体层25a上。
如在本发明中公开的那样,增强了盖的屏蔽效果,不仅因为通过耦合相同材料的两个板——第一板20和第二板23——来形成凹陷201,而且因为凹陷201的内部容易地由相同材料(比如第一导体层25a)覆盖。
参照图2K,孔230被形成为穿透第二板23、第三金属层24a、凹陷201的底表面201a、第一导体层25a和表面处理层27。因此,获得用于MEMS器件的盖50,该盖包括第一板20、第二板23、粘合层22和第一导体层25a。第二板23可任选地具有设置于其上的第三金属层24a。粘合层22设置于第二金属层21b上以便耦合到第二板23上的第三金属层24a或者在无第三金属层24a的情况下直接耦合到第二板23。
参照图2L,在后续工艺中,向载体板28(比如电路板)施加盖50以便形成封装体60。封装体60容纳装配于载体板28上的半导体部件29(例如MEMS芯片29a和/或ASIC芯片29b),由此形成MEMS器件70(比如麦克风、压力传感器或者通量传感器)。载体板28经由导电耦合层30耦合到第一板20的第一表面20a上的第一导体层25a以实现接地并且保证EMI(电磁干扰)屏蔽。在凹陷201中接纳半导体部件29。
在作为麦克风的实施例中,孔230形成声学端口,该端口允许声波的进入。在其它实施例中,孔230形成允许待测量的压力波或者其它量的进入的端口。
将BT芯材料用于第一板和第二板20、23两者允许使用与在制造BGA(球栅阵列)衬底中使用的生产方法相似的生产方法。这实现使用已经安装的技术和设备来容易、可靠和廉价制造各部分以及允许运用大规模生产技术以进一步减少成本。此外,更易于使设计适应不同内部和外部尺寸而在供应商侧和在封装级均无昂贵加工成本。具体而言,可以根据部件29的硅性质而具有不同凹陷尺寸以具有用于最优频率响应和SNR(信噪比)的恰当组合。
图7示出了声学换能器70,该换能器形成设于封装体50中的MEMS麦克风。
声学换能器70包括MEMS芯片29a和ASIC芯片29b。MEMS芯片29a基本上由响应于声学激励的MEMS传感器构成,ASIC芯片29b被配置用于正确偏置MEMS芯片29a、用于处理生成的电容式振动信号并且在声学换能器70的输出OUT上提供可以随后由关联电子设备的微控制器处理的数字信号。
ASIC芯片29b包括:模拟型的预放大器电路71,该预放大器电路被设计成与MEMS芯片29a直接对接并且具有用于放大(并且适当滤波)由MEMS芯片29a生成的电容式振动信号的预放大器功能;电荷泵73,实现生成用于偏置MEMS芯片29a的适当电压;例如西格玛-德尔塔型的模数转换器74,配置用于接收时钟信号CK和由预放大器电路71放大的差分信号并且将它转换成数字信号;参考信号生成器电路75,连接到模数转换器74并且被设计成供应用于模数转换的参考信号;以及驱动器76,设计成作为在模数转换器74与外部系统(例如关联电子设备的微控制器)之间的接口来操作。
此外,声学换能器70可以包括(易失性或者非易失性型)存储器78,该存储器例如可外部编程以便实现根据不同配置(例如增益配置)使用声学换能器70。
声学换能器70可以如图4中所示使用于电子设备80中。电子设备80例如是移动通信便携设备(比如移动电话、PDA、笔记本计算机)、但是也可以是语音记录器、具有语音记录能力的音频文件阅读器等。取而代之,电子设备80可以是能够水下操作的水听器或者听力辅助设备。
电子设备80包括微处理器81和连接到微处理器81的例如具有键盘和显示器的输入/输出接口83。声学换能器70经由信号处理块85(该信号处理块可以在声学换能器70的输出处执行数字信号的进一步处理操作)来与微处理器81通信。此外,电子设备80可以包括用于在音频输出(未示出)上生成声音的扬声器86以及内部存储器87。
最后,清楚的是,可以对这里描述和图示的盖、制造方法和MEMS器件做出诸多变化和修改,这些变化和修改全部落入如在所附权利要求中限定的本发明的范围内。
Claims (19)
1.一种用于在MEMS器件(70)中使用的盖(50),包括:
第一板(20),具有相对的第一表面和第二表面(20a,20b),所述第一表面具有设置于其上的第一金属层(21a),其中凹陷(201)延伸穿过所述第一板和所述第一金属层;
第二板(23),具有相对的第三表面和第四表面(23a,23b);
粘合层(22),夹入于所述第一板的所述第二表面(20b)与所述第二板的所述第三表面(23a)之间并且被配置成将所述第一板和所述第二板耦合在一起以便允许所述凹陷由所述第二板的所述第三表面闭合;以及
第一导体层(25a),设置于所述凹陷的底表面(201a)和侧表面(201b)上,所述侧表面与所述底表面相邻。
2.根据权利要求1所述的盖,其中所述第二板(23)的所述第三表面(23a)具有设置于其上的中间金属层(24a),从而所述粘合层(22)经由所述中间金属层(24a)耦合所述第一板(20)的所述第二表面(20b)和所述第二板的所述第三表面。
3.根据权利要求1或者2所述的盖,其中所述第一板(20)的所述第二表面(20b)具有设置于其上的又一金属层(21b),从而所述粘合层(22)经由所述又一金属层(21b)耦合所述第一板的所述第二表面和所述第二板(23)的所述第三表面(23a)。
4.根据权利要求1-3中的任一权利要求所述的盖,其中所述第一导体层(25a)还在所述凹陷(201)以外的所述第一金属层(21a)上延伸。
5.根据权利要求1-4中的任一权利要求所述的盖,还包括设置于所述第一导体层(25a)上的表面处理层(27)。
6.根据权利要求5所述的盖,其中所述表面处理层(27)由从包括镍、钯、金、锡、不锈钢及其组合的组中选择的一种材料制成。
7.根据权利要求1-6中的任一权利要求所述的盖,还包括延伸穿过所述第二板(23)、所述凹陷(201)的所述底表面(201a)和所述第一导体层(25a)的孔(230)。
8.根据权利要求1-7中的任一权利要求所述的盖,其中所述第一板(20)和所述第二板(23)由相同材料制成。
9.一种MEMS封装体,包括:
根据权利要求1-8中的任一权利要求所述的盖(50);
载体板(28);以及
至少一个半导体部件(29),装配于所述载体板上;
其中所述载体板经由导电耦合层(30)耦合到所述第一板的所述第一表面(20a)上的所述第一导体层(25a),并且在所述凹陷(201)中接纳所述半导体部件。
10.一种声学换能器(70),包括根据权利要求9所述的MEMS封装体。
11.一种电子设备(80),包括微处理器控制单元(81)、连接到所述微处理器控制单元(81)的根据权利要求10所述的声学换能器(70)、连接到所述微处理器(81)的输入/输出接口(83)以及扬声器(86)。
12.一种用于制造用于在MEMS器件中使用的盖的方法,包括以下步骤:
提供具有第一表面(20a)和第二表面(20b)的第一板(20),所述第一表面上具有第一金属层(21a);
在所述第一板的所述第二表面上形成粘合层(22);
形成延伸穿过所述第一金属层、所述第一板和所述粘合层的通腔(200);
提供具有相对的第三表面和第四表面(23a,23b)的第二板(23)并且将所述第二板的所述第三表面和所述粘合层(22)耦合在一起,由此在底表面(201a)处闭合所述通腔(200)以由所述通腔形成凹陷,其中所述凹陷具有与所述底表面相邻的侧表面(201b);
在所述第一金属层以及所述凹陷的所述底表面和侧表面上形成第一导体层(25a)。
13.根据权利要求12所述的方法,其中提供第一板(20)包括在所述第一板的所述第一表面和第二表面(20a,20b)上形成初始金属层(211)、对所述初始金属层进行粗糙化以获得所述第一金属层(21a)和第二金属层(21b),所述粘合层(22)形成于所述第二金属层上。
14.根据权利要求13所述的方法,其中粗糙化包括用于打薄所述初始金属层(211)的蚀刻工艺。
15.根据权利要求12-14中的任一权利要求所述的方法,其中第三金属层(24a)和第四金属层(24b)分别形成于所述第二板(23)的所述第三表面和第四表面(23a,23b)上以便将所述第三金属层和所述粘合层(22)耦合在一起。
16.根据权利要求15所述的方法,还包括在形成所述第一导体层(25a)之时在所述第四金属层(24b)上形成第二导体层(25b);以及
去除所述第二导体层和第四金属层(24b)。
17.根据权利要求12-16中的任一权利要求所述的方法,还包括穿过所述第二板(23)、所述凹陷(201)的所述底表面(201a)和所述第一导体层(25a)形成孔(230)。
18.根据权利要求12-17中的任一权利要求所述的方法,还包括在所述第一导体层(25a)上形成表面处理层(27)。
19.根据权利要求18所述的方法,其中所述表面处理层(27)由从包括镍、钯、金、锡、不锈钢及其组合的组中选择的材料制成。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2009/000527 WO2011061771A1 (en) | 2009-11-20 | 2009-11-20 | Lid, fabricating method thereof, and mems package made thereby |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102762489A true CN102762489A (zh) | 2012-10-31 |
Family
ID=42371951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801625515A Pending CN102762489A (zh) | 2009-11-20 | 2009-11-20 | 盖、其制造方法和由此制成的mems封装体 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20130028450A1 (zh) |
EP (1) | EP2501644A1 (zh) |
CN (1) | CN102762489A (zh) |
WO (1) | WO2011061771A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103803480A (zh) * | 2012-11-09 | 2014-05-21 | 意法半导体股份有限公司 | 电子设备封装的盖件和用于制造其的方法 |
CN108737943A (zh) * | 2017-04-17 | 2018-11-02 | 钰太芯微电子科技(上海)有限公司 | 一种新型mems麦克风及其制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI416686B (zh) * | 2010-08-06 | 2013-11-21 | Unimicron Technology Corp | 微機電之承載件及其製法 |
CN103037297B (zh) * | 2012-12-12 | 2015-07-08 | 瑞声声学科技(深圳)有限公司 | Mems麦克风及其制作方法 |
US8809973B2 (en) * | 2013-01-23 | 2014-08-19 | Infineon Technologies Ag | Chip package comprising a microphone structure and a method of manufacturing the same |
JP6237982B2 (ja) | 2013-04-23 | 2017-11-29 | セイコーエプソン株式会社 | 物理量センサー、電子機器及び移動体 |
CN110078016A (zh) | 2013-09-30 | 2019-08-02 | 日月光半导体制造股份有限公司 | 封装结构及其制造方法 |
EP3143776B1 (en) * | 2014-05-12 | 2018-03-07 | TDK Corporation | Microphone assembly and method of manufacturing a microphone assembly |
CN104779213B (zh) * | 2015-04-16 | 2017-12-15 | 歌尔股份有限公司 | 集成传感器的封装结构和封装方法 |
CN208572438U (zh) * | 2018-08-02 | 2019-03-01 | 瑞声声学科技(深圳)有限公司 | Mems麦克风的终端装配结构 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2658728Y (zh) * | 2003-09-26 | 2004-11-24 | 玉山奈米机电股份有限公司 | 热电堆红外线感测组件的封装结构 |
CN2812465Y (zh) * | 2005-06-17 | 2006-08-30 | 瑞声声学科技(深圳)有限公司 | 微机电系统传声器封装结构 |
WO2006098339A1 (ja) * | 2005-03-16 | 2006-09-21 | Yamaha Corporation | 半導体装置、半導体装置の製造方法、および蓋体フレーム |
CN101006748A (zh) * | 2004-08-19 | 2007-07-25 | 美商楼氏电子有限公司 | 硅电容器麦克风及制造方法 |
CN101142672A (zh) * | 2005-03-16 | 2008-03-12 | 雅马哈株式会社 | 半导体装置、半导体装置的制造方法及壳体框架 |
CN101325823A (zh) * | 2007-06-11 | 2008-12-17 | 美律实业股份有限公司 | 硅晶麦克风的封装构造 |
US20090154734A1 (en) * | 2007-12-14 | 2009-06-18 | Samsung Electronics Co., Ltd. | Method for fabricating micro speaker and micro speaker fabricated by the same |
US20090167772A1 (en) * | 2007-12-27 | 2009-07-02 | Stmicroelectronics S.R.L. | Graphic system comprising a fragment graphic module and relative rendering method |
CN101478710A (zh) * | 2009-01-17 | 2009-07-08 | 歌尔声学股份有限公司 | 硅电容传声器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4223887A1 (de) * | 1992-07-21 | 1994-01-27 | Basf Ag | Verfahren zur Herstellung eines Polymer/Metall- oder Polymer/Halbleiter-Verbundes |
US7439616B2 (en) | 2000-11-28 | 2008-10-21 | Knowles Electronics, Llc | Miniature silicon condenser microphone |
US7777313B2 (en) * | 2005-06-07 | 2010-08-17 | Analog Devices, Inc. | Electronic package structures and methods |
FR2907633B1 (fr) * | 2006-10-20 | 2009-01-16 | Merry Electronics Co Ltd | Boitier de systeme micro-electromecanique. |
TW200826206A (en) * | 2006-12-08 | 2008-06-16 | Taiwan Solutions Systems Corp | Semiconductor fabrication method and structure thereof |
US7843021B2 (en) * | 2008-02-28 | 2010-11-30 | Shandong Gettop Acoustic Co. Ltd. | Double-side mountable MEMS package |
TWI361170B (en) * | 2008-10-30 | 2012-04-01 | Unimicron Technology Corp | Cover component of micro-mechanical device and fabrication method thereof |
IT1392742B1 (it) * | 2008-12-23 | 2012-03-16 | St Microelectronics Rousset | Trasduttore acustico integrato in tecnologia mems e relativo processo di fabbricazione |
EP2252077B1 (en) * | 2009-05-11 | 2012-07-11 | STMicroelectronics Srl | Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof |
-
2009
- 2009-11-20 WO PCT/IT2009/000527 patent/WO2011061771A1/en active Application Filing
- 2009-11-20 EP EP09802226A patent/EP2501644A1/en not_active Withdrawn
- 2009-11-20 CN CN2009801625515A patent/CN102762489A/zh active Pending
-
2012
- 2012-10-05 US US13/646,249 patent/US20130028450A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2658728Y (zh) * | 2003-09-26 | 2004-11-24 | 玉山奈米机电股份有限公司 | 热电堆红外线感测组件的封装结构 |
CN101006748A (zh) * | 2004-08-19 | 2007-07-25 | 美商楼氏电子有限公司 | 硅电容器麦克风及制造方法 |
WO2006098339A1 (ja) * | 2005-03-16 | 2006-09-21 | Yamaha Corporation | 半導体装置、半導体装置の製造方法、および蓋体フレーム |
CN101142672A (zh) * | 2005-03-16 | 2008-03-12 | 雅马哈株式会社 | 半导体装置、半导体装置的制造方法及壳体框架 |
CN2812465Y (zh) * | 2005-06-17 | 2006-08-30 | 瑞声声学科技(深圳)有限公司 | 微机电系统传声器封装结构 |
CN101325823A (zh) * | 2007-06-11 | 2008-12-17 | 美律实业股份有限公司 | 硅晶麦克风的封装构造 |
US20090154734A1 (en) * | 2007-12-14 | 2009-06-18 | Samsung Electronics Co., Ltd. | Method for fabricating micro speaker and micro speaker fabricated by the same |
US20090167772A1 (en) * | 2007-12-27 | 2009-07-02 | Stmicroelectronics S.R.L. | Graphic system comprising a fragment graphic module and relative rendering method |
CN101478710A (zh) * | 2009-01-17 | 2009-07-08 | 歌尔声学股份有限公司 | 硅电容传声器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103803480A (zh) * | 2012-11-09 | 2014-05-21 | 意法半导体股份有限公司 | 电子设备封装的盖件和用于制造其的方法 |
US9822001B2 (en) | 2012-11-09 | 2017-11-21 | Stmicroelectronics S.R.L. | Process for manufacturing a lid for an electronic device package, and lid for an electronic device package |
CN103803480B (zh) * | 2012-11-09 | 2018-04-20 | 意法半导体股份有限公司 | 电子设备封装的盖件和用于制造其的方法 |
CN108737943A (zh) * | 2017-04-17 | 2018-11-02 | 钰太芯微电子科技(上海)有限公司 | 一种新型mems麦克风及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011061771A1 (en) | 2011-05-26 |
EP2501644A1 (en) | 2012-09-26 |
US20130028450A1 (en) | 2013-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102762489A (zh) | 盖、其制造方法和由此制成的mems封装体 | |
US8670579B2 (en) | MEMS microphone | |
US9998812B2 (en) | Surface mountable microphone package, a microphone arrangement, a mobile phone and a method for recording microphone signals | |
US8759149B2 (en) | Encapsulated micro-electro-mechanical device, in particular a MEMS acoustic transducer | |
US9002040B2 (en) | Packages and methods for packaging MEMS microphone devices | |
CN103155032B (zh) | 用于去除非所需声音的麦克风装置和方法 | |
US7657025B2 (en) | Microphone module and method for fabricating the same | |
US20100322451A1 (en) | MEMS Microphone | |
CN107343249B (zh) | 多设备模块、包括该模块的装置和制造该模块的方法 | |
US20120153771A1 (en) | Microelectromechanical transducer and corresponding assembly process | |
US8649545B2 (en) | Microphone unit | |
JP5348073B2 (ja) | 電気音響変換素子搭載基板及びマイクロホンユニット、並びにそれらの製造方法 | |
US20150146888A1 (en) | Mems microphone package and method of manufacturing the same | |
US10252906B2 (en) | Package for MEMS device and process | |
CN101437187A (zh) | 用以减缩微型传感器封装体积的堆叠式封装结构 | |
US20140367810A1 (en) | Open Cavity Substrate in a MEMS Microphone Assembly and Method of Manufacturing the Same | |
US8610006B2 (en) | Lid for micro-electro-mechanical device and method for fabricating the same | |
US9813790B1 (en) | Microphone package | |
TWI398401B (zh) | 微機電裝置之覆蓋構件及其製法、及由其所製成的微機電裝置封裝件 | |
JP2008211466A (ja) | マイクロホン用パッケージ、マイクロホン搭載体、マイクロホン装置 | |
US20200377363A1 (en) | Packaging for mems transducers | |
US20180167744A1 (en) | Transducer packaging | |
US20230283963A1 (en) | Microphone assembly and packaging methods for size reduction and back volume increase | |
TW202404891A (zh) | 微機電封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121031 |