CN102760631B - 真空处理室 - Google Patents

真空处理室 Download PDF

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Publication number
CN102760631B
CN102760631B CN201210124533.1A CN201210124533A CN102760631B CN 102760631 B CN102760631 B CN 102760631B CN 201210124533 A CN201210124533 A CN 201210124533A CN 102760631 B CN102760631 B CN 102760631B
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pedestal
processing chamber
vacuum processing
support
chamber according
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CN102760631A (zh
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C·L·史蒂文斯
W·T·布洛尼甘
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Orbotech LT Solar LLC
KLA Corp
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Abstract

一种真空处理室，其具有用于改善与衬底支架的电接触的装置。具体实施例提供了一种等离子体处理室，其具有用于支撑支架的基架、多个固定柱和在基架的整个区域上分散的弹性触头。所述固定柱为支架提供物理支撑，同时弹性触头提供与支架的可靠的、可重复的多点电接触。

Description

真空处理室
技术领域
本发明涉及一种真空处理装置，例如对衬底或其他工件进行蚀刻或在其上形成薄膜的等离子体室。
背景技术
在半导体、平板显示器、太阳能电池板等领域的加工过程中都包括在真空室中进行处理。例如，真空室用于等离子体增强化学气相淀积(PECVD)、物理汽相淀积(PVD)、等离子体蚀刻以及用于在衬底(工件)上形成薄膜和在衬底上蚀刻结构的各种其他处理。在这样的室中，各种气体通过喷射器或通过喷头流入所述室，并且等离子体被点燃以对所述衬底上进行蚀刻或在其上沉积薄膜。为了将等离子体中的带电物质朝向衬底吸引，接地电位被施加于衬底或者衬底下面的电极。
图1A-1C是用于一次处理单个衬底的真空处理室的各个阶段的示意图，本发明的实施例可在其中实施。装载室105用于将单个衬底102装载到真空处理室100中。在图1A中，真空门115关闭，衬底位于装载室105内的机械手110的铰接臂111上。如图所示，下部电极120、室主体122和室顶部124全部接地。在该示例中，RF(射频)电源连接至上部电极125，而地或者其他电源供至下部电极120。然而，还公知的是接地至上部电极并且向下部电极提供RF电源，或者向接地的室内的两个电极都提供RF电源。
在图1B中，真空门115已经打开，铰接臂111将衬底引进处理室100的内部。在图1C中，衬底已经置于基座120上，铰接臂111已经被收回，并且真空门115已经关闭。在这样的条件下，等离子体被点燃并且处理步骤被执行。因为单个衬底直接位于基座上，它一般顺从基座上的不规则性，并与基座保持较好的物理的和均匀的电接触。
图2A-2D是用于处理放置在支架上的多个衬底的真空处理室的各个阶段的示意图，本发明的实施例可在其中实施。该实施例特别适用于在硅晶片上制造太阳能电池。应当指出的是，虽然所示实施例示出的是适于同时运送若干个衬底的托盘或支架，但也可以用被构造为运送单个衬底的托盘来完成。装载室205用于将若干个位于托盘204上的衬底202装载到真空处理室200中。在图2A中，真空门215关闭，并且衬底202位于托盘204上，所述托盘204可使用辊子206、环形带等传送。如图所示，下部电极220、室主体222和室顶部224均接地。在该示例中，RF电源连接至上部电极225，而地或者其他电源供至下部电极220。然而，还公知的是，接地至上部电极和向下部电极提供RF电源，或者向接地的室内的两个电极都提供RF电源。
在图2B中，真空门215已经打开，托盘204被引进处理室200的内部。在图2C中，真空门已经关闭，并且室200内能被抽成真空。在图2D中，托盘204被放置到已经被升到其处理位置中的基座220上。在这样的条件下，等离子体被点燃并且处理步骤能够进行。因为单个衬底不直接坐落在基座上，而是位于托盘上，并且因为托盘一般不会顺从基座上的不规则性，因此不与基座进行均匀的电接触。也就是说，电路径必须从基座流至托盘和从托盘流至每个晶片。所述托盘或支架不会完全地顺从基座，因此电接触不均匀且更可能被限制于各离散点。
图3A-3F是用于处理放置在基座上的多个衬底的真空处理室的各个阶段的示意图，本发明的实施例可在其中实施。该实施例特别适用于在硅晶片上制造太阳能电池、LED等。应当指出的是，虽然所示实施例示出的是适于同时运送若干个衬底的托盘或支架，但也可用被构造为运送单个衬底的托盘或支架来完成。装载室305用于将位于托盘或支架304上的若干个衬底302装载到真空处理室300中。在图3A中，真空门315关闭，并且衬底302位于托盘304上，所述托盘304可使用辊子306、环形带等传送。如图所示，下部电极320、室主体322和室顶部324均接地。在该实施例中，RF电源连接至上部电极325，而地或者其它电源被供至下部电极320。在该实施例中，基座坐落在基架308上。然而，还公知的是，接地至上部电极和向下部电极提供RF电源，或者向接地的室内的两个电极都提供RF电源。
在图3B中，真空门315已经打开，托盘304被引进处理室300的内部。在图3C中，托盘304完全位于室300内。在图3D中，基座被升起，并且衬底从托盘被传输至基座上。也就是说，图3A-3F的室包括传送机构301，其构造为从托盘传送衬底到基座上。在图3E中，托盘304从室200移走，在图3F中真空门315关闭并且室300内部能被抽成真空。在这样的条件下，等离子体被点燃并且处理步骤能够进行。在该实施例中，电路径必须从基架流至基座，再从基座流至每个晶片。然而，因为基座和基架不是完全平的，基座不会完全地顺从基架，因此电接触不均匀且更可能被限制于离散点。
发明内容
本发明所包括的以下概述是为了提供对本发明一些方面和特征的基本理解。此概述不是本发明的外延综述，同样地它也并不旨在特别标定本发明的关键点或关键性部件或者划定本发明的范围。其唯一目的是以简化的形式介绍本发明的一些概念，作为下面介绍的更详细说明的前述。
本发明提供一种真空处理室，其具有用于改善与衬底支架的电接触的装置。具体实施例提供了一种等离子体处理室，其具有用于支撑支架的基架、多个固定柱和在基架的区域上分散的弹性触头。所述固定柱为支架提供物理支撑，而弹性触头提供与支架的可靠的、可重复的、多点电接触。
本发明的其他方面和特征将从这里描述的多种实施例的描述中变得更为清楚，并且归属在后附权利要求所限定的本发明范围和精神内。
附图说明
并入并组成该说明书一部分的附图例示了本发明的实施例，并且与说明书的描述一起用于解释和图解本发明的原理。所述附图用于以图表方式图解各示例性实施例的主要特征。所述附图并不旨在描述实际实施例的每个特征，也不表示被描述的各元件的相关尺寸，并且也不是按比例描绘。
图1A-1C是用于一次处理单个衬底的真空处理室的各个阶段的示意图，本发明的实施例可在其中实施。
图2A-2D是用于处理放置在支架上的多个衬底的真空处理室的各个阶段的示意图，本发明的实施例可在其中实施。
图3A-3F是用于处理放置在基座上的多个衬底的真空处理室的各个阶段的示意图，本发明的实施例可其中实施。
图4A-4D是根据本发明各个实施例的真空处理室的示意图。
图4E图解了本发明一个实施例的室的俯视图。
图4F图解了一个用于弹性触头的可替换性实施例。
图4G是根据本发明的室的另一个实施例的俯视图。
具体实施方式
图4A是图解实施本发明实施例的等离子体处理室400的主要元件的示意图。室400包括实质上由例如铝、不锈钢等金属制成的室主体。具有基架408用于支撑支架420，在支架420上放置一个或多个衬底402。在该说明书的整个其余部分，简称的“支架”将用于表示各种替换性元件，例如可移除的基座、托盘、衬底保持器等等。这里的关键点是，衬底位于支架上且支架位于基架上并需要与其构成电接触。基架408可连接至升降机构435，以便其能被降低以用于通过阀415进行衬底装载，然后被升起至图示的位置来进行处理。通过升降机构435和/或通过例如导电带或条401，接地被供至基架，这取决于基座的尺寸和需要传递给基座的功率的量。
在其顶部，室具有阴极组件425，RF电源连接至该阴极组件425。在图示的结构中，地电位被施加给基架408以便被结合至衬底。为了避免上述提及的接地问题，在该实施例中，固定接地柱430被附接至基架408，在该实施例中其充当被导电带401接地的电极。在这方面，应该认识到，尽管在操作期间固定接地柱430被固定在一个位置，但是在对系统进行操作之前所述固定接地柱是能手动调节的，以便保证边缘接触并致使基座顺应所需的轮廓。支架420坐落在固定接地柱430上，这样电接触通过固定接地柱430来形成。所述固定接地柱430提供可重复的接触以改善接地性。然而，这样的布置也可能具有很少的与支架420的可靠接触点。在使用被重复地在室内拆卸与放回的托盘的情况下尤其如此。这对于其中基座是可移除的且不被螺钉固定至基架的室而言情况也是如此。
图4B图解了本发明的另一个实施例。除固定接地柱430之外还添加有弹性接地触头438，除此之外，图4B中的元件类似于图4A中的元件。如图所示，当没有托盘或基座位于基架上时，弹性接地触头438的顶部延伸到固定接地柱430的顶部上方。如图4C所示，当支架420被放置在基架408上时，所述支架压缩弹性接地触头438直至其支靠在固定接地柱430上。以这样的方式，通过固定接地柱430和每个弹性接地触头438二者形成较好的电接触。然而应该理解的是，在该实施例中固定接地柱430可以导电或可以不导电，因为电接触通过弹性接地触头438来保证。此外，固定接地柱430或弹性接地触头438可被附接至支架420，而不是附接至基架408。
图4B中的局部放大图(callout)图解了弹性接地触头438的一个例子。在该实施例中，例如板簧的导电弹簧436在一端被连接至导电块432。导电块432通过例如穿过孔434插入的螺栓而被连接至基架408。当若干个弹性接地触头438被固定至基架408上时，所述导电弹簧形成被加载的电触头以保证与支架的可重复的、可靠的和多点的连接，无论支架是托盘或基座等，如图4C所示。该装置便于将具有衬底的托盘可重复地从基架移除和放置到基架上，或将基座从基架移除和放置到基架上。例如，基座能被移除用于清洁、保养、已坏衬底的清除等。如图4C所示，支架的重量压缩导电弹簧436直至支架支靠在固定接地柱430上。
图4D图解了不设置独立固定接地柱的例子。相反，多个弹性接地触头438被附接至室的基架或底板，并且支架420直接支靠在导电弹簧436上。该实施例可使用参照图4B和4C描述的弹性接地触头438。另一方面，如图4D的局部放大图(callout)所示，该实施例可使用包括止挡439的修改的弹性接地触头。可以理解，导电弹簧436可被支架的重量压缩直至导电弹簧436接触止挡439。这限制导电弹簧436的压缩量并因此固定支架420的高度。根据本发明的一个实施例，在所述室具有的弹性接地触头438中，其中一些所述弹性接地触头438包括止挡并且其余的弹性接地触头438不包括止挡。例如，仅仅位于角落的弹性接地触头438具有止挡，其余的弹性接地触头438不具有止挡。根据另一个实施例，所有的弹性接地触头都包括止挡。
图4E图解了所述室400的俯视图，其中支架420用虚线图解以表明其已经从室中移除。如图所示，一般在基架的周边设置相对少量的固定接地柱430。大量的弹性接地触头438被均匀地分配在基架的整个区域内。也就是说，弹性接地触头的数目比固定接地柱的数目多，这样固定接地柱提供可靠和可重复的物理定向，同时弹性接地触头提供可靠的、可重复的和分布式的电接触。当支架被放置在室内时，其压缩弹性接触头438以获得良好的电接触，然后支靠在位于周边的固定接地柱430上，从而保证正确对准。如局部放大图所示，固定接地柱430可包括圆锥形的顶部，所述圆锥形的顶部与支架中的相应的孔配合以增强支架的侧向和旋转对准。
图4F图解了弹性触头450的另一个实施例。在图4F中，管状固定段454被固定，同时滑动段452相对于管状固定段454滑动。在图4F中，滑动段452被示出为具有较小直径并在管状固定段454内滑动，然而滑动段也可以被构造成具有较大的直径并在管状固定段454之上滑动。弹簧456推动滑动段452至伸展位置。当支架420被放置在基架上时，滑动段452向下滑动并获得与支架420的良好电接触。根据一个实施例，弹性触头450选择性地包括限制滑动段452的压缩的止挡458。正如之前解释的，使用止挡选择，固定接地柱可免除，并且取而代之的是，具有止挡的若干弹性触头450可设在周边或者角落，而其余的触头可以不具有止挡。
图4G图解了所述室400另一个实施例的俯视图，其中支架420用虚线图解以表明其已经从室中移除。如图所示，设有相对少量的固定接地柱430。大量的弹性接地触头438绕基架的周边均匀地分布。也就是说，弹性接地触头438比固定接地柱更靠近支架420的边缘，这样电流通过导电弹簧436在边缘离开支架420，并且从不到达固定接地柱430。固定接地柱提供稳定和可重复的物理定位，同时弹性接地触头提供可靠的、可重复的和分布式的电接触。当支架被放置在室内时，其压缩弹性接地触头438以获得良好的电接触，然后支靠在位于周边的固定接地柱430上，从而保证正确对准。然而，如上所述并如4D所示，可以免除固定接地柱并仅依靠弹性柱，或依靠具有止挡的弹性柱。
虽然本发明已经参照其具体实施例进行了描述，但不局限于那些实施例。具体地，在不脱离所附权利要求所限定的本发明精神和范围下，本领域技术人员可实施多种变化和修改。

Claims (19)

1.一种真空处理室，包括：
室主体；
基架；
设在所述基架顶面上的多个弹性触头；
连接每个弹性触头至地电位的地电位路径；和，
坐落在基架上并与弹性触头形成电接触的支架，并且
还包括附接至所述基架的顶面的多个固定接地柱。
2.根据权利要求1所述的真空处理室，其特征在于，所述支架包括可移除的基座。
3.根据权利要求2所述的真空处理室，其特征在于，所述可移除的基座被构造为用于同时支撑多个衬底。
4.根据权利要求1所述的真空处理室，其特征在于，所述支架包括衬底托盘。
5.根据权利要求4所述的真空处理室，其特征在于，所述衬底托盘被构造为用于同时支撑多个衬底。
6.根据权利要求1所述的真空处理室，其特征在于，所述多个固定接地柱设在基架的周边区域，并且多个弹性触头在基架的整个所述周边区域上被均匀地分布。
7.根据权利要求1所述的真空处理室，其特征在于，所述多个弹性触头的至少一部分包括止挡。
8.根据权利要求1所述的真空处理室，其特征在于，所述多个弹性触头绕基架的周边分布，并且其中位于角落的弹性触头包括止挡。
9.根据权利要求1所述的真空处理室，其特征在于，每个弹性触头包括导电块和板簧，所述板簧在其一端连接至所述导电块。
10.根据权利要求9所述的真空处理室，其特征在于，每个弹性触头还包括设置在导电块和板簧之间的止挡。
11.根据权利要求1所述的真空处理室，其特征在于，每个弹性触头包括固定部件和滑动部件，以及推动滑动部件至伸展位置的弹簧。
12.根据权利要求1所述的真空处理室，其特征在于，所述多个弹性触头设在基架的周边区域，并且所述多个固定接地柱分布在比弹性触头更向内的位置。
13.一种用于对多个位于支架上的衬底同时进行等离子体处理的真空处理室，包括：
室主体；
设在所述室主体的上段的喷头；
设于所述室主体的下部的基架；
多个固定接地柱，其设于所述基架的顶面上并构造为支撑支架；
多个弹性触头，其在基架的顶面上均匀地分布并被构造为形成与支架的电接触；
连接每个弹性触头至电位的电路径。
14.根据权利要求13所述的真空处理室，其特征在于，所述支架包括基座，并且还包括传送机构，所述传送机构被构造为将衬底从托盘传送至基座上。
15.根据权利要求13所述的真空处理室，其特征在于，所述电位是地电位。
16.根据权利要求13所述的真空处理室，其特征在于，所述支架包括可移除基座或托盘。
17.根据权利要求13所述的真空处理室，其特征在于，所述多个弹性触头设于基架的周边区域，并且所述多个固定接地柱分布在从所述多个弹性触头向内的位置。
18.一种用于对多个位于支架上的衬底同时进行等离子体处理的真空处理室，包括：
室主体；
设在所述室主体的上段的喷头；
设在所述室主体的下部的基架；
衬底支架；
多个弹性触头，其在基架的顶面上分布并被构造为形成与衬底支架的电接触；
连接每个弹性触头至电位的地电位路径，
其中所述多个弹性触头设在衬底支架的周边区域，并且还包括基架顶面上的多个固定接地柱。
19.根据权利要求18所述的真空处理室，其特征在于，所述支架包括可移除基座或托盘。
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160601