CN102755975A - Method for preventing pollution of oxidation furnace tube - Google Patents
Method for preventing pollution of oxidation furnace tube Download PDFInfo
- Publication number
- CN102755975A CN102755975A CN2011101043710A CN201110104371A CN102755975A CN 102755975 A CN102755975 A CN 102755975A CN 2011101043710 A CN2011101043710 A CN 2011101043710A CN 201110104371 A CN201110104371 A CN 201110104371A CN 102755975 A CN102755975 A CN 102755975A
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- CN
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- Prior art keywords
- cleaning
- time
- boiler tube
- fin
- hydrogen
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000003647 oxidation Effects 0.000 title claims description 21
- 238000007254 oxidation reaction Methods 0.000 title claims description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 34
- 238000012423 maintenance Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000010453 quartz Substances 0.000 claims description 18
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000012544 monitoring process Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000002000 scavenging effect Effects 0.000 claims description 6
- 239000003708 ampul Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005474 detonation Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
A method for avoiding the pollution of oxidizing furnace tube features that the cleaning procedure after ordinary maintenance is changed from one procedure to two procedures. Wherein, the first time is normal cleaning, before the second time cleaning, the fin-shaped slice is firstly installed again, the lower position is adjusted to the upper position, and then the cleaning is carried out again. Therefore, the upper part and the lower part of the whole fin-shaped sheet can be cleaned, and no pollution dead angle is left due to low temperature. The pollution to the normally produced wafer caused by the unclean cleaning is avoided. Brings great benefits to the actual production.
Description
Technical field
The invention belongs to technical field of semiconductors, relate in particular to a kind of method of avoiding the oxidation boiler tube to pollute.
Background technology
In semiconductor fabrication, a part is absolutely necessary to the operational maintenance (Preventive Maintenance PM) of semiconductor equipment.In the PM process, may use the internal components such as quartz boat of recycling, for vertical-type oxidation boiler tube (Vertical Oxidation Furnace), also be like this.Internal components such as these quartz boats have been disassembled at PM at first, clean with cleaning machine.After cleaning finishes, be installed to the enterprising enforcement of boiler tube again and use.
Boiler tube inside quartz member is cleaned, often can not thoroughly clean up.In addition, reinstall in the process at parts, on operator's gloves or the pollutant of cleanness clothing such as sweat stain and other pollutants may stain these quartz members, oxidation furnace tubular construction sketch map as shown in Figure 1; These quartz members comprise quartz ampoule (Tube) 1, quartz boat (Boat) 2 and fin-shaped thin slice (Fin) 3.Fin-shaped thin slice 3 wherein is thin slices of the quartzy material of a series of circles, the similar wafer of shape, and material is quartzy, main effect is insulation.Therefore, each PM finishes, and boiler tube all can carry out once inside cleaning process again before formally producing.Referring to Fig. 1, detailed process is following: after PM accomplishes, in hydrogen-oxygen hybrid combustor 9, feed hydrogen 7 earlier and burn with oxygen 8, will burn in the water vapour feeding boiler tube 1 that produces through pipeline 10 then, while nitrogen 4 carries dichloroethylene 5 (DCE, Cl
2C
2H
2, Dichloroethylene) get into boiler tube 1 through pipeline 6, under 800～1200 ℃,, generally clean general half an hour to boiler tube 1 inner quartz member is cleaned.Concrete cleaning process also can be with reference to the cleaning method and the system of boiler tube in the CN 101327487B patent documentation " cleaning method of boiler tube and system ".
But; The cleaning of the boiler tube cleaning method of this prior art is still thorough inadequately, and this method can cause the latter half of fin-shaped thin slice lower because of temperature in the DCE cleaning process, and the position is at the dead angle; Be not easy to be cleaned the pollution sources after this becomes in the normal productive process.
Summary of the invention
The objective of the invention is to overcome the defective of prior art, a kind of method of avoiding the oxidation boiler tube to pollute is provided.Make the top and the bottom of whole fin-shaped thin slice all can be cleaned totally, Yin Wendu is low and leave and pollute the dead angle again, can avoid the pollution that the wafer of ordinary production is caused because clean clean.
The technical scheme that realizes the object of the invention is:
1, a kind of method of avoiding the oxidation boiler tube to pollute; The quartz member of said oxidation boiler tube comprises quartz ampoule, quartz boat and fin-shaped thin slice, after the operational maintenance of said oxidation furnace is accomplished, said quartz member is cleaned, and step is following: clean for the first time; In the boiler tube of said oxidation furnace, feed the steam that hydrogen and oxygen mix generate; Feed dichloroethylene simultaneously, under 800～1200 ℃, cleaned 20～60 minutes; Reinstall said fin-shaped thin slice then earlier, the top is transferred in the position of its below; Carry out the second time at last and clean, in the boiler tube of said oxidation furnace, feed the steam that hydrogen and oxygen mix generate, feed dichloroethylene simultaneously, under 800～1200 ℃, scavenging period 20～60 minutes.
The temperature of 2, cleaning the wherein said first time and cleaning for the second time is 950 ℃.
If 3, be placed with the monitoring wafer inside the wherein said boiler tube, then said scavenging period was as the criterion with the reaction time of the silicon dioxide growth thickness on the silicon chip of said monitoring wafer for
.
The temperature of 4, cleaning the wherein said first time and cleaning for the second time is 950 ℃, and scavenging period is half an hour.
5, wherein dichloroethylene carries the entering boiler tube through nitrogen.
6, wherein the mixed proportion of hydrogen and oxygen should be controlled within the hydrogen detonation aritical ratio.
The present invention avoids the beneficial effect of the method for oxidation boiler tube pollution to be:
Cleaning after method of the present invention is accomplished PM before cleaning for the second time, is reinstalled the fin-shaped thin slice by once changing twice into earlier, the top is transferred in the position of below, and then cleans one time.Like this, the top and the bottom of whole fin-shaped thin slice all can be cleaned totally, and Yin Wendu is low and leave and pollute the dead angle again.Avoided pollution that the wafer of ordinary production is caused because clean clean.
Description of drawings
Fig. 1 carries out the oxidation furnace tubular construction sketch map that cleans in the stove after accomplishing for PM;
Fig. 2 is the flow chart that embodiment of method that avoids the oxidation boiler tube to pollute of the present invention adopts twice cleaning.
Number among the figure:
1 quartz ampoule
2 quartz boats
3 fin-shaped thin slices
4 nitrogen
5 dichloroethylene
6 pipelines (nitrogen carries dichloroethylene and gets into boiler tube through this pipeline)
7 hydrogen
8 oxygen
9 hydrogen-oxygen hybrid combustors
10 pipelines (water vapour that oxyhydrogen combustion produces gets into boiler tube through this pipeline)
The specific embodiment
Below in conjunction with accompanying drawing and with the specific embodiment is example, and the present invention is elaborated.But what those skilled in the art should know is to the invention is not restricted to the listed specific embodiment, as long as spirit according to the invention all should be included in protection scope of the present invention.
The present invention is applicable to the vertical-type boiler tube, and is low to the latter half Yin Wendu in the dichloroethylene cleaning process of fin-shaped thin slice, and the position is at the dead angle, the problem that is not easy to be cleaned, and the cleaning after PM accomplished is by once changing into twice.Wherein, be normal wash for the first time, before cleaning for the second time, reinstall the fin-shaped thin slice earlier, the top is transferred in the position of below, and then cleans one time.Like this, the top and the bottom of whole fin-shaped thin slice all can be cleaned totally, and Yin Wendu is low and leave and pollute the dead angle again.Avoided pollution that the wafer of ordinary production is caused because clean clean.
Fig. 2 is the flow chart that embodiment of method that avoids the oxidation boiler tube to pollute of the present invention adopts twice DCE cleaning, and please at first be that step 100 is cleaned for the first time simultaneously referring to Fig. 1; After PM accomplishes, in hydrogen-oxygen hybrid combustor 9, feed hydrogen 7 earlier and burn, will burn in the water vapour feeding boiler tube 1 of generation through pipeline 10 then with oxygen 8; Nitrogen 4 carries dichloroethylene 5 and gets into boiler tube 1 through pipeline 6 simultaneously; Under 800～1200 ℃, cleaned 20～60 minutes, preferably; Cleaning temperature is 950 ℃, and scavenging period can be half an hour; If the boiler tube the inside is placed with the monitoring wafer, then be as the criterion with the reaction time of the silicon dioxide growth thickness on the silicon chip of monitoring wafer for
.Wherein the mixed proportion of hydrogen and oxygen should be controlled within the hydrogen detonation aritical ratio.
After cleaning completion for the first time; The present invention also has cleaning for the second time, but in order thoroughly to clean fin-shaped thin slice 3, before cleaning for the second time; Step 200 of the present invention is reinstalled fin-shaped thin slice 3; The top is transferred in the position of below, is only step 300 then and cleans for the second time, identical with the cleaning method first time of step 100.Like this, the top and the bottom of whole fin-shaped thin slice 3 all can be cleaned totally, and Yin Wendu is low and leave and pollute the dead angle again.Avoided to the pollution that the wafer of ordinary production causes, having brought very big benefit to actual production because clean clean.
It should be noted that the foregoing description is example and unrestricted the present invention, those skilled in the art can design a lot of alternate embodiments and not break away from the scope of appended claims.
Claims (6)
1. method of avoiding the oxidation boiler tube to pollute, the quartz member of said oxidation boiler tube comprises quartz ampoule, quartz boat and fin-shaped thin slice, after the operational maintenance of said oxidation furnace is accomplished, said quartz member is cleaned, step is following:
Clean for the first time, in the boiler tube of said oxidation furnace, feed the steam that hydrogen and oxygen mix generate, feed dichloroethylene simultaneously, under 800～1200 ℃, cleaned 20～60 minutes;
Reinstall said fin-shaped thin slice then earlier, the top is transferred in the position of its below;
Carry out the second time at last and clean, in the boiler tube of said oxidation furnace, feed the steam that hydrogen and oxygen mix generate, feed dichloroethylene simultaneously, under 800～1200 ℃, cleaned 20～60 minutes.
2. method according to claim 1, it is characterized in that: the temperature of cleaning the said first time and cleaning for the second time is 950 ℃.
3. method according to claim 1 or claim 2; It is characterized in that: if said boiler tube the inside is placed with the monitoring wafer, then said scavenging period was as the criterion with the reaction time of the silicon dioxide growth thickness on the silicon chip of said monitoring wafer for
.
4. method according to claim 1 or claim 2, it is characterized in that: the temperature of cleaning the said first time and cleaning for the second time is 950 ℃, and scavenging period is half an hour.
5. method according to claim 1 or claim 2, it is characterized in that: dichloroethylene carries the entering boiler tube through nitrogen.
6. method according to claim 1 or claim 2, it is characterized in that: wherein the mixed proportion of hydrogen and oxygen should be controlled within the hydrogen detonation aritical ratio.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110104371.0A CN102755975B (en) | 2011-04-25 | 2011-04-25 | Method for preventing pollution of oxidation furnace tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110104371.0A CN102755975B (en) | 2011-04-25 | 2011-04-25 | Method for preventing pollution of oxidation furnace tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102755975A true CN102755975A (en) | 2012-10-31 |
| CN102755975B CN102755975B (en) | 2014-11-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110104371.0A Active CN102755975B (en) | 2011-04-25 | 2011-04-25 | Method for preventing pollution of oxidation furnace tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102755975B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152867A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | APCVD furnace tube recover maintenance method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114815A (en) * | 1980-02-08 | 1981-09-09 | Koujiyundo Silicon Kk | Preliminary washing method of reaction furnace for preparing polycrystalline silicon |
| JPH03285811A (en) * | 1990-03-30 | 1991-12-17 | Osaka Titanium Co Ltd | Method for removing polymer in producing polycrystalline silicon |
| CN101327487A (en) * | 2007-06-21 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method and system for cleaning boiler tube |
| CN101544371A (en) * | 2008-03-28 | 2009-09-30 | 三菱麻铁里亚尔株式会社 | Polymer inactivation method for polycrystalline silicon manufacturing device |
-
2011
- 2011-04-25 CN CN201110104371.0A patent/CN102755975B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114815A (en) * | 1980-02-08 | 1981-09-09 | Koujiyundo Silicon Kk | Preliminary washing method of reaction furnace for preparing polycrystalline silicon |
| JPH03285811A (en) * | 1990-03-30 | 1991-12-17 | Osaka Titanium Co Ltd | Method for removing polymer in producing polycrystalline silicon |
| CN101327487A (en) * | 2007-06-21 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Method and system for cleaning boiler tube |
| CN101544371A (en) * | 2008-03-28 | 2009-09-30 | 三菱麻铁里亚尔株式会社 | Polymer inactivation method for polycrystalline silicon manufacturing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152867A (en) * | 2013-05-14 | 2014-11-19 | 中芯国际集成电路制造(上海)有限公司 | APCVD furnace tube recover maintenance method |
| CN104152867B (en) * | 2013-05-14 | 2017-07-28 | 中芯国际集成电路制造(上海)有限公司 | APCVD boiler tubes are answered a pager's call maintenance method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102755975B (en) | 2014-11-19 |
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| C14 | Grant of patent or utility model | ||
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Effective date of registration: 20191112 Address after: 221000 1f-2f, A2 plant, No.26 Chuangye Road, economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu zhongkehanyun Semiconductor Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |