CN104152867B - APCVD boiler tubes are answered a pager's call maintenance method - Google Patents

APCVD boiler tubes are answered a pager's call maintenance method Download PDF

Info

Publication number
CN104152867B
CN104152867B CN201310177643.9A CN201310177643A CN104152867B CN 104152867 B CN104152867 B CN 104152867B CN 201310177643 A CN201310177643 A CN 201310177643A CN 104152867 B CN104152867 B CN 104152867B
Authority
CN
China
Prior art keywords
boiler tube
cassette
boiler
apcvd
pager
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310177643.9A
Other languages
Chinese (zh)
Other versions
CN104152867A (en
Inventor
沈建飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Shanghai Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Manufacturing International Shanghai Corp filed Critical Semiconductor Manufacturing International Shanghai Corp
Priority to CN201310177643.9A priority Critical patent/CN104152867B/en
Publication of CN104152867A publication Critical patent/CN104152867A/en
Application granted granted Critical
Publication of CN104152867B publication Critical patent/CN104152867B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

Answer a pager's call maintenance method, comprise the following steps the invention discloses a kind of APCVD boiler tubes:Step one, TLC is purified, and utilizes O2The metal ion in boiler tube and in the cassette in boiler tube is removed with reference to DCE;Step 2, wet oxygen purification, for removing the DCE residuals in boiler tube and in the cassette in boiler tube;Step 3, O2Baking, for removing steam and organic matter in boiler tube and in the cassette in boiler tube.By setting up wet oxygen purifying step behind TLC purifying steps, it can effectively remove DCE in TLC steps and remain, the Chloride residue in especially DCE;Pass through O2Baking procedure, the steam and organic matter in boiler tube can be removed, so as to can both remove metal ion and organic matter, it can effectively prevent DCE residuals and influence of the steam to subsequent thin film thickness from improving the yield of product again, and the method that the present invention is provided is lower than existing maintenance method efficiency high, cost.

Description

APCVD boiler tubes are answered a pager's call maintenance method
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of APCVD boiler tubes are answered a pager's call maintenance method.
Background technology
In the production technology of semiconductor, for APCVD(Films Prepared by APCVD)For boiler tube, year is done per annual meeting Maintenance, referred to as APM(annual PM).In APM, quartz, 1, thermocouple, cassette 2, igniter 3 and some stones can be changed English blast pipe, as shown in figure 1, being the structural representation of APCVD boiler tubes shown in Fig. 1.
Due to putting in quartz, can inevitably run into that metal ion and organic matter stain in installation process asks Topic.So that the metal ion of reaction cavity in boiler tube after APM can be caused exceeded exceeded with organic matter.
Current industry answering a pager's call for APCVD Furnace boards APM(Recover) Normal practice is to utilize TLC Purge, specifically refers to be passed through N into the reaction chamber of boiler tube2、O2、DCE(Trans-dichloroethylene), to remove metal ion, and And the additional test run for carrying out test wafer is gone to step, one kind of the test wafer and non-product, it is only used for test and is used, thus To improve metal ion and organic matter contamination problems.
Then, after actual APM maintenances are returned, boiler tube in addition to above-mentioned metal ion and organic matter contamination problems, Also suffer from thickness evenness puzzlement as shown in Figure 2:In the supporting plate of cassette(slot)Position thickness is partially thick, in the central thick of cassette Degree is partially thin.The reason is that the supporting plate of cassette(slot)Position is due to the presence of steam and chlorion etc., subsequent deposition technique In, the supporting plate of cassette(slot)The film thickness of the deposit of position is more than the 983.21- in the film thickness of other positions, Fig. 2 1095.9 unit is angstrom that it is than nanometer(nm)The unit of small 10 orders of magnitude, is represented with symbol A.Chlorion is in TLC purifications What step was left, because DCE contains chlorion, after the completion of TLC purifying steps, chlorion can be remained in boiler tube.It is currently profit Improve the uniformity of deposit film thickness with position of the adjustment wafer in cassette.But such a way is very time-consuming, often The result of measurement metal ion and organic matter is needed after individual TLC and test wafer test running, and for thickness evenness Problem need to constantly combine thickness results and adjust position of the wafer in cassette.Thereby result in raw inefficiency and cost is too high asks Topic.
Therefore, metal ion and organic matter contamination problems can be improved in boiler tube and can improve thickness by how providing one kind The maintenance method of answering a pager's call of the APCVD boiler tubes of uniformity is those skilled in the art's technical problem urgently to be resolved hurrily.
The content of the invention
Answered a pager's call maintenance method it is an object of the invention to provide a kind of APCVD boiler tubes, pass through and increase behind TLC purifying steps If wet oxygen purifying step, it can effectively remove DCE in TLC steps and remain, especially Chloride residue, pass through O2Baking procedure, To remove the steam and organic matter in boiler tube, so as to can both remove metal ion and organic matter, effectively DCE can be prevented residual again The influence to subsequent thin film thickness with steam is stayed, and it is lower than existing maintenance method efficiency high, cost.
To achieve the above object, the present invention is adopted the following technical scheme that:
A kind of APCVD boiler tubes are answered a pager's call maintenance method, are comprised the following steps:
Step one, TLC is purified, and it is removed in boiler tube and the metal in the cassette in boiler tube using N2, O2 combination DCE Ion;
Step 2, wet oxygen purification, for removing the DCE residuals in boiler tube and in the cassette in boiler tube;
Step 3, O2Baking is oxygen baking, for removing the steam in boiler tube and in the cassette in boiler tube and having Machine thing.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, the wet oxygen purification is directed in boiler tube be passed through H2 And O2, utilize H2And O2Product come remove DCE residual.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, in the step 2, when wet oxygen is purified, reaction temperature Degree control is at 1000 degrees Celsius -1150 degrees Celsius.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, in the step 3, O2During baking, O2 gas Flow velocity is 10L~20L/min.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, in the step 3, O2The reaction temperature of baking Control is at 1000 degrees Celsius -1150 degrees Celsius.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, it is necessary to by cassette liter before step one is carried out Enter in boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, the temperature control in boiler tube exists 750-850 degrees Celsius.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, before step one, oxygen prebake conditions are first carried out, To remove the organic substance residues in boiler tube.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, O2During prebake conditions, O2Gas flow rate be 10L~ 20L/min, reaction temperature is controlled at 1000 degrees Celsius -1150 degrees Celsius.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, carrying out O2, it is necessary to by cassette before prebake conditions Rise up into boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, the temperature control in boiler tube At 750-850 degrees Celsius.
The APCVD boiler tubes that the present invention is provided are answered a pager's call maintenance method, by setting up wet oxygen purification step behind TLC purifying steps Suddenly, it can effectively remove DCE in TLC steps to remain, the Chloride residue in especially DCE;Pass through O2Baking procedure, can go Except the steam and organic matter in boiler tube, so as to can both remove metal ion and organic matter, can effectively prevent again DCE residuals and Influence of the steam to subsequent thin film thickness, and it is lower than existing maintenance method efficiency high, cost.
Brief description of the drawings
The APCVD boiler tubes maintenance method of answering a pager's call of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the structural representation of APCVD boiler tubes;
Fig. 2 is the thickness distribution of the film deposited after maintenance method is answered a pager's call on wafer of being answered a pager's call using existing APCVD boiler tubes Schematic diagram;
Fig. 3 is that the APCVD boiler tubes of the embodiment of the present invention one are answered a pager's call the schematic flow sheet of maintenance method;
Fig. 4 is the thickness point of the film deposited after maintenance method is answered a pager's call on wafer of being answered a pager's call using the APCVD boiler tubes of the present invention Cloth schematic diagram;
Fig. 5 is that the APCVD boiler tubes of the embodiment of the present invention two are answered a pager's call the schematic flow sheet of maintenance method;
In figure, 1- quartz ampoules, 2- cassettes, 3- igniters.
Embodiment
Maintenance method of being answered a pager's call to APCVD boiler tubes of the invention is described in further detail below.
The present invention is described in more detail below with reference to accompanying drawings, which show the preferred embodiments of the present invention, It should be appreciated that those skilled in the art can change invention described herein and still realize beneficial effects of the present invention.Cause This, description below is appreciated that for the widely known of those skilled in the art, and is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended Time, but it is only to those skilled in the art routine work.
To become apparent the purpose of the present invention, feature, the embodiment to the present invention is made below in conjunction with the accompanying drawings Further instruction.It should be noted that, accompanying drawing is using very simplified form and uses non-accurately ratio, only to side Just the purpose of the embodiment of the present invention, is lucidly aided in illustrating.
Embodiment one
Answer a pager's call maintenance method, comprise the following steps referring to Fig. 3, present embodiments providing a kind of APCVD boiler tubes:
Step one, step S1, TLC purification is referred to(TLC purge), utilize N2, O2 combination DCE(I.e. trans two chloroethene Alkene)Remove in boiler tube and the metal ion in the cassette in boiler tube.The temperature of reaction is usual at 1000-1150 degrees Celsius, The thickness of growth is at 1000 angstroms(A)Left and right.DCE is liquid at normal temperatures, when using(When running formula)It is to be entered by N2 DCE is become gaseous by DCE holding bottles when then taking DCE out of, and the chlorion from DCE liquid enters boiler tube with Sprayable It is interior, then react.Chlorion primarily serves cleaning action, and it can reduce the ionic charge on wafer, so as to reduce Fault of construction on silicon face.Because this step is ordinary skill in the art means, therefore it will not be repeated here.This step it Before, cassette is risen up into boiler tube in advance, i.e., in the reaction chamber of boiler tube.
Step 2, refers to step S2, wet oxygen purification, for removing the DCE in boiler tube and in the cassette in boiler tube Residual, is actually the main chlorion removed in DCE;
Preferably, the wet oxygen purifying step is directed in boiler tube be passed through H2And O2, utilize H2And O2Product be H2O comes Remove the chlorion in DCE residuals, mainly DCE residuals.Reaction principle is, using hydrogen ion and chloride binding into chlorination Hydrogen, so as to take away chlorion.H is found in actual experiment2O compares O2Easily remove clean DCE residual, so as to more added with Effect avoids the influence of the DCE residuals mainly film thickness that chlorion is deposited to subsequent wafer.
Preferably, in the step 2, when wet oxygen is purified, the reaction chamber interior reaction temperature control in boiler tube is taken the photograph 1000 - 1150 degrees Celsius of family name's degree.Too low temperature can influence reaction effect, and too high temperature can influence to be used for furnace tubing reaction chamber Temperature heater service life.This temperature range preferably balances the factor in terms of above-mentioned two.
Step 3, refers to step S3, O2Baking, for removing steam and organic matter in boiler tube.
Preferably, in the step 3, O2During baking, O2Gas flow rate be 10L~20L/min.Too high flow velocity can shadow Reaction effect is rung, too high flow velocity can influence exhaust.And 2 points of 10L~20L/min flow velocity summary, reached one compared with Good equalization point.
Preferably, the APCVD boiler tubes in the present embodiment are answered a pager's call in maintenance method, and in the step 3, O2The reaction of baking Temperature control is at 1000 degrees Celsius -1150 degrees Celsius.Too low temperature can influence reaction effect, and too high temperature can influence to be used for The service life of the heater of the temperature of furnace tubing reaction chamber.In terms of this temperature range preferably balances above-mentioned two Factor.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, it is necessary to by cassette liter before step one is carried out Enter in boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, the temperature control in boiler tube exists 750-850 degrees Celsius.Too low temperature influences the time of heating and cooling, and too high temperature easily causes cassette deformation.
The APCVD boiler tubes that the present embodiment is provided are answered a pager's call maintenance method, by TLC purifying steps(Step one)Set up below Wet oxygen purifying step(Step 2), it can effectively remove DCE in TLC steps and remain, the Chloride residue in especially DCE;It is logical Cross O2Baking procedure(Step 3), the steam and organic matter in boiler tube can be removed, so as to can both remove metal ion and have Machine thing, effectively can prevent DCE from remaining again(Especially chlorion)Influence with steam to subsequent thin film thickness, as shown in figure 4, And ask comparison diagram 2, it is seen then that maintenance method is answered a pager's call compared to existing method using the APCVD boiler tubes of the present invention, what is deposited on wafer is thin The uniformity of the thickness of film has obtained obvious improvement, eliminates the supporting plate of correspondence cassette on film(slot)The thickness mistake of position Thick phenomenon, improves the thickness evenness of film, which thereby enhances the yield of product, and the method that the present invention is provided is than existing Maintenance method efficiency high, cost it is low.
Embodiment two
Referring to Fig. 5, the APCVD boiler tubes of the present embodiment are answered a pager's call, maintenance method and the difference of embodiment one are:In step Before one, step S0 is referred to, O is first carried out2Prebake conditions, it is residual to remove organic matter in boiler tube and in the cassette in boiler tube Stay.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, O2During prebake conditions, O2Gas flow rate be 10L~ 20L/min, too high flow velocity can influence reaction effect, and too high flow velocity can influence exhaust.And 10L~20L/min flow velocity is comprehensive Close and state at 2 points, reached a preferable equalization point.Reaction temperature is controlled at 1000 degrees Celsius -1150 degrees Celsius.It is too low Temperature can influence reaction effect, and too high temperature can influence the use longevity of the heater of the temperature for furnace tubing reaction chamber Life.This temperature range preferably balances the factor in terms of above-mentioned two.
It is preferred that, in above-mentioned APCVD boiler tubes answer a pager's call maintenance method, carrying out O2, it is necessary to by cassette before prebake conditions Rise up into boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, the temperature control in boiler tube At 750-850 degrees Celsius.Too low temperature influences the time of heating and cooling, and too high temperature easily causes cassette deformation.
The present embodiment is compared to embodiment one due to being additionally arranged O before TLC purifying steps2Pre-bake step, therefore, it can Organic matter and steam in boiler tube and cassette is thoroughly removed, to ensure the stability of boiler tube depositing technics, product is improved Yield.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these changes and modification.

Claims (6)

  1. The maintenance method 1. a kind of APCVD boiler tubes are answered a pager's call, it is characterised in that comprise the following steps:
    Step one, TLC is purified, and utilizes N2、O2The metal ion in boiler tube and in the cassette in boiler tube is removed with reference to DCE;
    Step 2, wet oxygen purification, for removing the DCE residuals in boiler tube and in the cassette in boiler tube, wherein, the wet oxygen Purification is directed in boiler tube be passed through H2And O2, utilize H2And O2Product come remove DCE residual, wet oxygen purify when, reaction temperature Control is at 1000 degrees Celsius -1150 degrees Celsius;
    Step 3, O2Baking, for removing steam and organic matter in boiler tube and in the cassette in boiler tube, wherein, O2Gas Rate of flow of fluid is 10L/min~20L/min.
  2. The maintenance method 2. APCVD boiler tubes according to claim 1 are answered a pager's call, it is characterised in that in the step 3, O2Baking Reaction temperature control at 1000 degrees Celsius -1150 degrees Celsius.
  3. The maintenance method 3. APCVD boiler tubes according to claim 1 are answered a pager's call, it is characterised in that before step one is carried out, is needed Cassette is risen up into boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, in boiler tube Temperature control is at 750-850 degrees Celsius.
  4. The maintenance method 4. the APCVD boiler tubes according to any one in claims 1 to 3 are answered a pager's call, it is characterised in that in step Before one, O is first carried out2Prebake conditions, to remove the organic substance residues in boiler tube.
  5. The maintenance method 5. APCVD boiler tubes according to claim 4 are answered a pager's call, it is characterised in that O2During prebake conditions, O2Gas Flow velocity is 10L~20L/min, and reaction temperature is controlled at 1000 degrees Celsius -1150 degrees Celsius.
  6. The maintenance method 6. APCVD boiler tubes according to claim 4 are answered a pager's call, it is characterised in that carrying out O2Before prebake conditions, Need to rise up into cassette in boiler tube, it is necessary to which cassette is dropped from boiler tube after step 3, during lifting cassette, in boiler tube Temperature control at 750-850 degrees Celsius.
CN201310177643.9A 2013-05-14 2013-05-14 APCVD boiler tubes are answered a pager's call maintenance method Active CN104152867B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310177643.9A CN104152867B (en) 2013-05-14 2013-05-14 APCVD boiler tubes are answered a pager's call maintenance method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310177643.9A CN104152867B (en) 2013-05-14 2013-05-14 APCVD boiler tubes are answered a pager's call maintenance method

Publications (2)

Publication Number Publication Date
CN104152867A CN104152867A (en) 2014-11-19
CN104152867B true CN104152867B (en) 2017-07-28

Family

ID=51878487

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310177643.9A Active CN104152867B (en) 2013-05-14 2013-05-14 APCVD boiler tubes are answered a pager's call maintenance method

Country Status (1)

Country Link
CN (1) CN104152867B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107331728B (en) * 2017-06-20 2019-09-03 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yield
CN111089493A (en) * 2019-12-24 2020-05-01 通威太阳能(安徽)有限公司 Cleaning method for solar cell annealing furnace pipe

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101327487A (en) * 2007-06-21 2008-12-24 中芯国际集成电路制造(上海)有限公司 Method and system for cleaning boiler tube
CN101372739A (en) * 2007-08-10 2009-02-25 东京毅力科创株式会社 Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type
JP2009231332A (en) * 2008-03-19 2009-10-08 Toyoko Kagaku Co Ltd Cleaning gas supply device and semiconductor processing apparatus
CN102755975A (en) * 2011-04-25 2012-10-31 中国科学院微电子研究所 Method for preventing pollution of oxidation furnace tube

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970006216B1 (en) * 1994-03-11 1997-04-24 현대전자산업 주식회사 Field oxidation film forming method of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101327487A (en) * 2007-06-21 2008-12-24 中芯国际集成电路制造(上海)有限公司 Method and system for cleaning boiler tube
CN101372739A (en) * 2007-08-10 2009-02-25 东京毅力科创株式会社 Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type
JP2009231332A (en) * 2008-03-19 2009-10-08 Toyoko Kagaku Co Ltd Cleaning gas supply device and semiconductor processing apparatus
CN102755975A (en) * 2011-04-25 2012-10-31 中国科学院微电子研究所 Method for preventing pollution of oxidation furnace tube

Also Published As

Publication number Publication date
CN104152867A (en) 2014-11-19

Similar Documents

Publication Publication Date Title
CN104541362B (en) For the apparatus and method being selectively oxidized at a lower temperature using remote plasma source
TWI763858B (en) Dry stripping of boron carbide hardmask
JP6476369B2 (en) Cleaning method, semiconductor device manufacturing method, substrate processing apparatus, and program
US20080314418A1 (en) Method and System for Furnace Cleaning
CN101473419A (en) A dry non-plasma treatment system and method of using
CN101158032A (en) Film forming device and method thereof
CN104152867B (en) APCVD boiler tubes are answered a pager's call maintenance method
CN103372559A (en) Cleaning method for furnace tube
JP2005503316A5 (en)
JP2011233583A (en) Vapor-phase growth device and method of manufacturing silicon epitaxial wafer
CN101406891B (en) Boiler tube dry-type cleaning method
JP2009543351A5 (en)
JP2011058033A (en) Method for suppressing deposition of ammonium silicofluoride in exhaust gas treatment system piping
CN100533656C (en) Film formation apparatus and method of using the same
KR101416172B1 (en) Cleaning method for chamber of thin film deposition apparatus
JP5903666B2 (en) Film forming apparatus and film forming method using the same
JP5699022B2 (en) Exhaust gas treatment apparatus and exhaust gas treatment method
JP2005039153A (en) Substrate processing apparatus and method of manufacturing semiconductor device
JP2003247075A (en) Lpcvd apparatus, and thin film deposition method
JP2009135230A (en) Vapor-phase-grown-film forming device and vapor-phase-grown-film forming method
JP2017020091A (en) Maintenance method for deposition film formation device, and deposition film formation device
JP2007096189A (en) Method for managing plasma cvd device
JP2004048068A (en) Low pressure cvd device and manufacturing method of thin-film device
JP2021500305A (en) Methods and equipment for removing impurities from chlorosilane
JP2020119920A (en) Method for cleaning substrate-processing device and substrate-processing device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant