CN104152867A - APCVD furnace tube recover maintenance method - Google Patents

APCVD furnace tube recover maintenance method Download PDF

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Publication number
CN104152867A
CN104152867A CN201310177643.9A CN201310177643A CN104152867A CN 104152867 A CN104152867 A CN 104152867A CN 201310177643 A CN201310177643 A CN 201310177643A CN 104152867 A CN104152867 A CN 104152867A
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boiler tube
apcvd
pager
call
dce
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CN201310177643.9A
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CN104152867B (en
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沈建飞
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Abstract

The invention discloses an APCVD furnace tube recover maintenance method. The method comprises the following steps: first, TLC purification is carried out, and metal ions located in a furnace tube and on a crystal boat in the furnace tube are cleared by utilization of oxygen and DCE; second, wet oxygen purification is carried out, and the DCE residuals located in the furnace tube and on the crystal boat in the furnace tube are removed; third, oxygen drying is carried out, and vapor and organic matters located in the furnace tube and on the crystal boat in the furnace tube are removed. Through addition of the wet oxygen purification step after the TLC purification step, the DCE residuals in the TLC step, especially chloride ion residuals in the DCE, can be removed effectively; through the oxygen drying step, vapor and organic matters in the furnace tube can be removed; therefore metal ions and organic matters can be removed, the affects of the DCE residuals and vapor to subsequent film thickness can be prevented effectively and the product yield rate is raised. Compared with the prior art, the method is advantaged by high efficiency and low cost.

Description

The maintenance procedure of answering a pager's call of APCVD boiler tube
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to the maintenance procedure of answering a pager's call of a kind of APCVD boiler tube.
Background technology
In semi-conductive production technique, for APCVD(Films Prepared by APCVD) for boiler tube, yearly maintenance is done in every annual meeting, is referred to as APM(annual PM).In APM, can change quartz, 1, thermopair, brilliant boat 2, portfire 3 and some quartzy vapor pipes, as shown in Figure 1, shown in Fig. 1, be the structural representation of APCVD boiler tube.
Due to the putting of quartz, in installation process, can inevitably run into the problem that metal ion and organism are stained.Thereby the metal ion that can cause reaction cavity in the later boiler tube of APM exceeds standard and organism exceeds standard.
At present industry for (recover) the conventional way of answering a pager's call of APCVD Furnace board APM is, utilizes TLC purge, specifically points in the reaction chamber of boiler tube and passes into N 2, O 2, DCE(trans-dichloroethylene), to remove metal ion, and additional trial trip step of carrying out test wafer, this test wafer is not the one of product, it is only for the use of test, improves metal ion thus and organism is stained problem.
Then,, from actual APM maintains, boiler tube is stained problem except above-mentioned metal ion and organism, also can be subject to even thickness sexual obsession as shown in Figure 2: thickness is partially thick in supporting plate (slot) position of brilliant boat, partially thin at the central thickness of brilliant boat.Its reason is, supporting plate (slot) position of brilliant boat is due to the existence of steam and chlorion etc., in subsequent deposition technique, the film thickness of the deposit of supporting plate (slot) position of brilliant boat is greater than the film thickness of other positions, the unit of 983.21-1095.9 in Fig. 2 is dust, it is than the unit of little 10 orders of magnitude of nanometer (nm), and with symbol, A represents.Chlorion is left in TLC purifying step, because DCE contains chlorion, and after TLC purifying step completes, can residual chlorine ion in boiler tube.To utilize the position of adjustment wafer on brilliant boat to improve the homogeneity of deposition film thickness at present.But this kind of way is very consuming time, after the trial trip of each TLC and test wafer, needs to measure metal ion and organic result, and need constantly to adjust the position of wafer on brilliant boat in conjunction with thickness results for thickness evenness problem.Cause thus raw inefficiency and high cost problem.
Therefore, how to provide that a kind of can to improve the maintenance procedure of answering a pager's call of APCVD boiler tube that metal ion and organism in boiler tube stain problem and can improve thickness evenness be those skilled in the art's technical problems urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide the maintenance procedure of answering a pager's call of a kind of APCVD boiler tube, by set up wet oxygen purifying step after TLC purifying step, can effectively remove in TLC step DCE residual, especially Chloride residue, passes through O 2baking procedure, to remove steam and the organism in boiler tube, thereby both can remove metal ion and organism, can effectively prevent again the residual and impact of steam on subsequent thin film thickness of DCE, and higher than existing maintenance procedure efficiency, cost is low.
To achieve the above object, the present invention adopts following technical scheme:
The maintenance procedure of answering a pager's call of a kind of APCVD boiler tube, comprises the steps:
Step 1, TLC purifies, and it utilizes N2, O2 to remove in boiler tube in conjunction with DCE and is positioned at the metal ion on the brilliant boat of boiler tube;
Step 2, wet oxygen purifies, for removing in boiler tube and to be positioned at DCE on the brilliant boat of boiler tube residual;
Step 3, O 2baking is oxygen baking, for removing in boiler tube and being positioned at steam and the organism on the brilliant boat of boiler tube.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, it is to point in boiler tube to pass into H that described wet oxygen purifies 2and O 2, utilize H 2and O 2resultant to remove DCE residual.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, in described step 2, when wet oxygen purifies, temperature of reaction is controlled at 1000 degrees Celsius-1150 degrees Celsius.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, in described step 3, O 2when baking, the gas flow rate of O2 is 10L~20L/min.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, in described step 3, O 2the temperature of reaction of baking is controlled at 1000 degrees Celsius-1150 degrees Celsius.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, before carrying out step 1, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, before step 1, first carry out oxygen prebake conditions, to remove the organic substance residues in boiler tube.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, O 2when prebake conditions, O 2gas flow rate be 10L~20L/min, temperature of reaction is controlled at 1000 degrees Celsius-1150 degrees Celsius.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, carrying out O 2before prebake conditions, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.
The APCVD boiler tube provided by the invention maintenance procedure of answering a pager's call, by set up wet oxygen purifying step after TLC purifying step, can effectively remove in TLC step DCE residual, the especially Chloride residue in DCE; Pass through O 2baking procedure, can remove steam and organism in boiler tube, thereby both can remove metal ion and organism, can effectively prevent again the residual and impact of steam on subsequent thin film thickness of DCE, and higher than existing maintenance procedure efficiency, cost is low.
Brief description of the drawings
The APCVD boiler tube of the present invention maintenance procedure of answering a pager's call is provided by following embodiment and accompanying drawing.
Fig. 1 is the structural representation of APCVD boiler tube;
Fig. 2 be adopt existing APCVD boiler tube answer a pager's call maintenance procedure answer a pager's call after the thickness distribution schematic diagram of the film of deposit on wafer;
Fig. 3 is the answer a pager's call schematic flow sheet of maintenance procedure of the APCVD boiler tube of the embodiment of the present invention one;
Fig. 4 be adopt APCVD boiler tube of the present invention answer a pager's call maintenance procedure answer a pager's call after the thickness distribution schematic diagram of the film of deposit on wafer;
Fig. 5 is the answer a pager's call schematic flow sheet of maintenance procedure of the APCVD boiler tube of the embodiment of the present invention two;
In figure, 1-silica tube, the brilliant boat of 2-, 3-portfire.
Embodiment
Below will be described in further detail the APCVD boiler tube of the present invention maintenance procedure of answering a pager's call.
Below with reference to accompanying drawings the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here and still realize beneficial effect of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details to realize developer's specific objective, for example, according to about system or about the restriction of business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
For object of the present invention, feature are become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Embodiment mono-
Refer to Fig. 3, the present embodiment provides the maintenance procedure of answering a pager's call of a kind of APCVD boiler tube, comprises the steps:
Step 1, refers to step S1, and TLC purifies (TLC purge), and utilizing N2, O2 is trans-dichloroethylene in conjunction with DCE() remove in boiler tube and be positioned at the metal ion on the brilliant boat of boiler tube.The temperature of reaction is conventionally at 1000-1150 degree Celsius, and the thickness of growth is in 1000 dusts (A) left and right.DCE is liquid at normal temperatures, and when use, (while running formula) entered when then DCE holding bottle takes DCE out of DCE is become to gaseous state by N2, from the chlorion of DCE liquid, enters in boiler tube with Sprayable, then reacts.Chlorion mainly plays cleaning action, and it can reduce the ionic charge on wafer, thereby reduces the textural defect on silicon face.Because this step is ordinary skill in the art means, therefore do not repeat them here.Before this step, in advance brilliant boat is risen up in boiler tube, in the reaction chamber of boiler tube.
Step 2, refers to step S2, and wet oxygen purifies, and for removing in boiler tube and to be positioned at DCE on the brilliant boat of boiler tube residual, is actually the chlorion in main removal DCE;
Preferably, described wet oxygen purifying step is to point in boiler tube to pass into H 2and O 2, utilize H 2and O 2resultant be H 2it is residual that O removes DCE, is mainly the chlorion of DCE in residual.Reaction principle is to utilize hydrogen ion and chlorion to be combined into hydrogenchloride, thereby take away chlorion.In actual experiment, find H 2o compares O 2more easily removing clean DCE residual, is mainly the impact of the film thickness of chlorion on subsequent wafer deposit thereby can more effectively avoid DCE residual.
Preferably, in described step 2, when wet oxygen purifies, the reaction chamber interior reaction temperature in boiler tube is controlled at 1000 degrees Celsius-1150 degrees Celsius.Too low temperature can affect reaction effect, and too high temperature can affect the work-ing life for the well heater of the temperature of furnace tubing reaction chamber.This temperature range preferably balance the factor of above-mentioned two aspects.
Step 3, refers to step S3, O 2baking, for removing steam and the organism in boiler tube.
Preferably, in described step 3, O 2when baking, O 2gas flow rate be 10L~20L/min.Too high flow velocity can affect reaction effect, and too high flow velocity can affect exhaust.And comprehensive above-mentioned 2 points of the flow velocity of 10L~20L/min have reached a good trim point.
Preferably, answer a pager's call in maintenance procedure at the APCVD of the present embodiment boiler tube, in described step 3, O 2the temperature of reaction of baking is controlled at 1000 degrees Celsius-1150 degrees Celsius.Too low temperature can affect reaction effect, and too high temperature can affect the work-ing life for the well heater of the temperature of furnace tubing reaction chamber.This temperature range preferably balance the factor of above-mentioned two aspects.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, before carrying out step 1, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.Too low temperature affects the time of heating and cooling, and too high temperature easily causes brilliant boat distortion.
The APCVD boiler tube that the present embodiment the provides maintenance procedure of answering a pager's call, by setting up wet oxygen purifying step (step 2) below in TLC purifying step (step 1), can effectively remove in TLC step DCE residual, the especially Chloride residue in DCE, pass through O 2baking procedure (step 3), can remove steam and organism in boiler tube, thereby metal ion and organism both can be removed, can effectively prevent again DCE residual (especially chlorion) and the impact of steam on subsequent thin film thickness, as shown in Figure 4, and please comparison diagram 2, visible, adopt the APCVD boiler tube of the present invention maintenance procedure of answering a pager's call to compare existing method, on wafer, the homogeneity of the thickness of the film of deposit has obtained obvious improvement, eliminate the blocked up phenomenon of thickness of the supporting plate of corresponding brilliant boat (slot) position on film, improve the thickness evenness of film, improve thus the yield of product, and method provided by the invention is higher than existing maintenance procedure efficiency, cost is low.
Embodiment bis-
Refer to Fig. 5, the answer a pager's call difference of maintenance procedure and embodiment mono-of the APCVD boiler tube of the present embodiment is: before step 1, refer to step S0, first carry out O 2prebake conditions, to remove in boiler tube and to be positioned at the organic substance residues on the brilliant boat of boiler tube.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, O 2when prebake conditions, O 2gas flow rate be 10L~20L/min, too high flow velocity can affect reaction effect, too high flow velocity can affect exhaust.And comprehensive above-mentioned 2 points of the flow velocity of 10L~20L/min have reached a good trim point.Temperature of reaction is controlled at 1000 degrees Celsius-1150 degrees Celsius.Too low temperature can affect reaction effect, and too high temperature can affect the work-ing life for the well heater of the temperature of furnace tubing reaction chamber.This temperature range preferably balance the factor of above-mentioned two aspects.
Preferably, answer a pager's call in maintenance procedure at above-mentioned APCVD boiler tube, carrying out O 2before prebake conditions, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.Too low temperature affects the time of heating and cooling, and too high temperature easily causes brilliant boat distortion.
The present embodiment is compared embodiment mono-owing to having set up O before TLC purifying step 2pre-bake step, therefore, can thoroughly remove organism and steam in boiler tube and brilliant boat, to guarantee the stability of boiler tube depositing technics, improves product yield.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if these amendments of the present invention and within modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.

Claims (9)

1. the APCVD boiler tube maintenance procedure of answering a pager's call, is characterized in that, comprises the steps:
Step 1, TLC purifies, and utilizes N 2, O 2remove in boiler tube and be positioned at the metal ion on the brilliant boat of boiler tube in conjunction with DCE;
Step 2, wet oxygen purifies, for removing in boiler tube and to be positioned at DCE on the brilliant boat of boiler tube residual;
Step 3, O 2baking, for removing in boiler tube and being positioned at steam and the organism on the brilliant boat of boiler tube.
2. the APCVD boiler tube according to claim 1 maintenance procedure of answering a pager's call, is characterized in that, in described step 2, it is to point in boiler tube to pass into H that described wet oxygen purifies 2and O 2, utilize H 2and O 2resultant to remove DCE residual.
3. the APCVD boiler tube according to claim 1 maintenance procedure of answering a pager's call, is characterized in that, in described step 2, when wet oxygen purifies, temperature of reaction is controlled at 1000 degrees Celsius-1150 degrees Celsius.
4. the APCVD boiler tube according to claim 1 maintenance procedure of answering a pager's call, is characterized in that, in described step 3, and O 2when baking, O 2gas flow rate be 10L~20L/min.
5. the APCVD boiler tube according to claim 1 maintenance procedure of answering a pager's call, is characterized in that, in described step 3, and O 2the temperature of reaction of baking is controlled at 1000 degrees Celsius-1150 degrees Celsius.
6. the APCVD boiler tube according to claim 1 maintenance procedure of answering a pager's call, is characterized in that, before carrying out step 1, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.
7. according to the maintenance procedure of answering a pager's call of the APCVD boiler tube described in any one in claim 1~6, it is characterized in that, before step 1, first carry out O 2prebake conditions, to remove the organic substance residues in boiler tube.
8. the APCVD boiler tube according to claim 7 maintenance procedure of answering a pager's call, is characterized in that O 2when prebake conditions, O 2gas flow rate be 10L~20L/min, temperature of reaction is controlled at 1000 degrees Celsius-1150 degrees Celsius.
9. the APCVD boiler tube according to claim 7 maintenance procedure of answering a pager's call, is characterized in that, is carrying out O 2before prebake conditions, brilliant boat need to be risen up in boiler tube, after step 3, brilliant boat need to be fallen from boiler tube, in the brilliant boat process of lifting, the temperature in boiler tube is controlled at 750-850 degree Celsius.
CN201310177643.9A 2013-05-14 2013-05-14 APCVD boiler tubes are answered a pager's call maintenance method Active CN104152867B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107331728A (en) * 2017-06-20 2017-11-07 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yields
CN111089493A (en) * 2019-12-24 2020-05-01 通威太阳能(安徽)有限公司 Cleaning method for solar cell annealing furnace pipe

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970006216B1 (en) * 1994-03-11 1997-04-24 현대전자산업 주식회사 Field oxidation film forming method of semiconductor device
CN101327487A (en) * 2007-06-21 2008-12-24 中芯国际集成电路制造(上海)有限公司 Method and system for cleaning boiler tube
CN101372739A (en) * 2007-08-10 2009-02-25 东京毅力科创株式会社 Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type
JP2009231332A (en) * 2008-03-19 2009-10-08 Toyoko Kagaku Co Ltd Cleaning gas supply device and semiconductor processing apparatus
CN102755975A (en) * 2011-04-25 2012-10-31 中国科学院微电子研究所 Method for avoiding pollution of oxidation furnace pipe

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970006216B1 (en) * 1994-03-11 1997-04-24 현대전자산업 주식회사 Field oxidation film forming method of semiconductor device
CN101327487A (en) * 2007-06-21 2008-12-24 中芯国际集成电路制造(上海)有限公司 Method and system for cleaning boiler tube
CN101372739A (en) * 2007-08-10 2009-02-25 东京毅力科创株式会社 Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type
JP2009231332A (en) * 2008-03-19 2009-10-08 Toyoko Kagaku Co Ltd Cleaning gas supply device and semiconductor processing apparatus
CN102755975A (en) * 2011-04-25 2012-10-31 中国科学院微电子研究所 Method for avoiding pollution of oxidation furnace pipe

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107331728A (en) * 2017-06-20 2017-11-07 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yields
CN107331728B (en) * 2017-06-20 2019-09-03 常州亿晶光电科技有限公司 The technique for improving PERC high-efficiency battery EL yield
CN111089493A (en) * 2019-12-24 2020-05-01 通威太阳能(安徽)有限公司 Cleaning method for solar cell annealing furnace pipe

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