CN111089493A - Cleaning method for solar cell annealing furnace pipe - Google Patents
Cleaning method for solar cell annealing furnace pipe Download PDFInfo
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- CN111089493A CN111089493A CN201911346735.9A CN201911346735A CN111089493A CN 111089493 A CN111089493 A CN 111089493A CN 201911346735 A CN201911346735 A CN 201911346735A CN 111089493 A CN111089493 A CN 111089493A
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- annealing furnace
- dichloroethylene
- furnace pipe
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- 238000000137 annealing Methods 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004140 cleaning Methods 0.000 title claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000001301 oxygen Substances 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 55
- KFUSEUYYWQURPO-OWOJBTEDSA-N trans-1,2-dichloroethene Chemical group Cl\C=C\Cl KFUSEUYYWQURPO-OWOJBTEDSA-N 0.000 claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 35
- 230000001681 protective effect Effects 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 5
- 238000005086 pumping Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000460 chlorine Substances 0.000 abstract description 2
- 229910052801 chlorine Inorganic materials 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 19
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 125000001309 chloro group Chemical group Cl* 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- KFUSEUYYWQURPO-UPHRSURJSA-N cis-1,2-dichloroethene Chemical group Cl\C=C/Cl KFUSEUYYWQURPO-UPHRSURJSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- LGXVIGDEPROXKC-UHFFFAOYSA-N 1,1-dichloroethene Chemical group ClC(Cl)=C LGXVIGDEPROXKC-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 150000001336 alkenes Chemical group 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- YGYAWVDWMABLBF-UHFFFAOYSA-N Phosgene Chemical compound ClC(Cl)=O YGYAWVDWMABLBF-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UKDOTCFNLHHKOF-FGRDZWBJSA-N (z)-1-chloroprop-1-ene;(z)-1,2-dichloroethene Chemical group C\C=C/Cl.Cl\C=C/Cl UKDOTCFNLHHKOF-FGRDZWBJSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D25/00—Devices or methods for removing incrustations, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag
- F27D25/008—Devices or methods for removing incrustations, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag using fluids or gases, e.g. blowers, suction units
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/15—Tapping equipment; Equipment for removing or retaining slag
- F27D3/1545—Equipment for removing or retaining slag
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
- F27D2007/063—Special atmospheres, e.g. high pressure atmospheres
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention belongs to the field of crystalline silicon solar cells, and discloses a cleaning method for a solar cell annealing furnace pipe; when cleaning the annealing furnace tube, firstly increasing the temperature in the annealing furnace tube, pumping air in the annealing furnace tube to negative pressure, and introducing trans-1, 2-dichloroethylene carried by protective gas into the annealing furnace tube; according to the invention, high-energy chloride ions released by oxidation of oxygen under the high-temperature condition of trans-1, 2-dichloroethylene are combined with metal ions to generate stable chlorine metal salt, so that the amount of the metal ions in the annealing furnace pipe is reduced, and the PID resistance of the monocrystalline silicon solar cell and the efficiency of a cell piece are improved; the tubes cleaned with trans-1, 2-dichloroethylene are advantageous in terms of efficiency and PID resistance.
Description
Technical Field
The invention relates to the field of crystalline silicon solar cells, in particular to a cleaning method for a solar cell annealing furnace tube.
Background
The current explanation of potential induced attenuation (PID) of solar photovoltaic modules (modules) is typical: ester bonds of EVA (ethylene-vinyl acetate copolymer) react when meeting water to produce freely movable acetic acid; reaction of acetic acid with alkali (Na2CO3) in glass to separate out NA+Under the action of an external electric field, the particles move to the surface of the battery and are concentrated on the antireflection layer and even enter the emitter of the battery, so that the surface passivation antireflection film fails firstly, then PN junctions are damaged, and the PID phenomenon is caused. While PERC cells have a higher risk of PID failure relative to conventional cells. And the metal pollution in the process greatly increases the surface recombination of the battery piece, so that the open-circuit voltage loss of the battery is caused.
The current single crystal PERC solar cell manufacturing process comprises the steps of texturing, diffusion- (laser doping) etching, annealing, back passivation and film coating, laser grooving and screen printing. Wherein, in the long-time running process of the existing annealing furnace tube, metal impurity ions contained in the conditions of incomplete treatment after being cleaned by etching liquid and carriers can remain in the furnace tube in the normal production process. At this time, a trace amount of metal ions such as sodium ions in the contaminated annealing furnace tube enter the cell to be produced to carry out cyclic contamination. And the finished battery piece is made into an assembly and then contains NA+Under the action of an external electric field, the current moves to the surface of the battery and is enriched in the anti-reflection layer, and even enters the emitter of the battery to damage a PN junction, so that the output power of the battery piece is attenuated, and the PID failure phenomenon is easily caused. The industry is also working to address this problem. The invention finds problems at the solar cell end, and the method can be suitable for cleaning the annealing furnace pipe and has great practical value.
Disclosure of Invention
1. Technical problem to be solved by the invention
The invention provides a cleaning method of a solar cell annealing furnace tube, aiming at the technical problems that impurities in an annealing furnace tube are difficult to effectively remove and a potential induced attenuation effect is easy to occur during annealing of a solar cell in the prior art, the method utilizes trans-1, 2-dichloroethylene to effectively clean the annealing furnace tube, reduces PID (proportion integration differentiation) failure caused by pollution of metal ions and the like to the cell and improves the efficiency of the cell.
2. Technical scheme
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
when the annealing furnace pipe is cleaned, the temperature in the annealing furnace pipe is firstly increased, the annealing furnace pipe is pumped to negative pressure, and trans-1, 2-dichloroethylene carried by protective gas is introduced into the annealing furnace pipe.
Preferably, the method comprises the following specific steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe;
(2) introducing oxygen into the annealing furnace pipe from a section of inlet of the annealing furnace pipe, and keeping the oxygen for t 1;
(3) after the oxygen is introduced for the duration time T1, in the process of keeping the oxygen introduction, the trans-1, 2-dichloroethylene carried by the protective gas is used, and the trans-1, 2-dichloroethylene carried by the protective gas is introduced into the annealing furnace pipe for the duration time T;
(4) after the trans-1, 2-dichloroethylene is introduced for the duration T, the introduction of the trans-1, 2-dichloroethylene is ended, and the introduction of the oxygen is continued for the duration T2.
Preferably, in the step (1), the annealing furnace pipe is pumped to the negative pressure of 100Pa-1000 Pa.
Preferably, the temperature in the annealing furnace pipe is increased to 900 +/-100 ℃ by heating through a heating device in the step (1).
Preferably, the oxygen is introduced for the duration of t1 in the step (2), and the t1 is 5 +/-3 min; and (4) introducing oxygen for a duration of t2, wherein the t2 is 5 +/-3 min.
Preferably, the protective gas in step (3) is nitrogen.
Preferably, the volume ratio of the trans-1, 2-dichloroethylene carried by the protective gas and the oxygen introduced into the annealing furnace pipe in the step (3) is 1 (35 +/-5).
Preferably, the duration of the introduction of the trans-1, 2-dichloroethylene carried by the protective gas in the step (3) is T, and the T is 0.5H-4H.
Preferably, 1000-; the flow of oxygen introduced in the step (4) is as follows: greater than 1000 sccm.
Preferably, the oxygen gas introduction flow rate in the step (3) is as follows: 300-4000 sccm.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the invention has the following remarkable effects:
according to the cleaning method for the annealing furnace tube of the solar cell, when the annealing furnace tube is cleaned, the temperature in the annealing furnace tube is firstly increased, the annealing furnace tube is pumped to negative pressure, and trans-1, 2-dichloroethylene carried by protective gas is introduced into the annealing furnace tube; high-energy chloride ions released by oxygen oxidation under the high-temperature condition of trans-1, 2-dichloroethylene are combined with metal ions to generate stable chlorine metal salt, so that the amount of the metal ions in an annealing furnace pipe is reduced (PL effect graphs after annealing silicon wafers before and after cleaning are shown in figures 1 and 2), and the PID resistance of the monocrystalline silicon solar cell and the efficiency of the cell are improved. The furnace tube cleaned by the DCE has advantages in the aspects of efficiency and PID resistance.
Drawings
FIG. 1 is a graph showing the PL effect of annealed silicon wafers after cleaning in comparative example 1;
FIG. 2 is a graph showing the effect of PL on the annealed silicon wafer after cleaning in example 1;
FIG. 3 is a graph showing the effect of PL on annealed silicon wafers after cleaning in comparative example 2;
FIG. 4 is a graph showing the effect of PL on annealed silicon wafers after cleaning in comparative example 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; moreover, the embodiments are not relatively independent, and can be combined with each other according to needs, so that a better effect is achieved. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
When the annealing furnace pipe is cleaned, the temperature in the annealing furnace pipe is firstly increased, the annealing furnace pipe is pumped to negative pressure, and trans-1, 2-dichloroethylene carried by protective gas is introduced into the annealing furnace pipe.
The dichloroethylene used in the invention is trans-1, 2-dichloroethylene, the gas reacts with oxygen at the high temperature of 900 +/-100 ℃ to generate carbon dioxide and water, and because the reaction is carried out at the high temperature, chlorine atoms in the Dichloroethylene (DCE) can be separated and excited to form high-energy chlorine atoms with high activity, and the high-energy chlorine atoms can be combined with metal ions on the furnace tube wall to form stable chlorides attached to the tube wall and are not ionized to participate in oxide film formation or subsequent processes. Thereby avoiding the problem that the battery piece is polluted and then loses efficacy. When a certain amount of chloride is generated, the chloride is also taken out of the annealing furnace from the tail gas pipe in a gas atmosphere.
The method comprises the following specific steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; pumping the annealing furnace tube to a negative pressure of 100pa-1000 pa; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe; the temperature in the annealing furnace tube is raised to 900 plus or minus 100 ℃.
(2) Introducing oxygen into the annealing furnace pipe from a section of inlet of the annealing furnace pipe, and continuing for a time t1, wherein t1 is 5 +/-3 min, and the flow rate of the introduced oxygen is as follows: 1000-;
(3) after the oxygen is introduced for the duration time T1, in the process of keeping the introduction of the oxygen, introducing the oxygen at the flow rate of 300-4000sccm, simultaneously using the protective gas to carry the trans-1, 2-dichloroethylene, introducing the trans-1, 2-dichloroethylene carried by the protective gas into the annealing furnace tube for the duration time T, wherein the protective gas is nitrogen; the purity of Dichloroethylene (DCE) used in the invention is 7.5N grade, the volume ratio of the introduced trans-1, 2-dichloroethylene carried by the protective gas to the introduced oxygen in the annealing furnace pipe is 1 (35 +/-5), and the T is 0.5H-4H.
(4) After the trans-1, 2-dichloroethylene is introduced for the duration time T, the introduction of the trans-1, 2-dichloroethylene is finished, the oxygen introduction time T2 is continued, the T2 is 5 +/-3 min, and the oxygen introduction flow rate is as follows: greater than 1000 sccm.
It should be noted that, by maintaining a reasonable flow of oxygen at each stage of the whole cleaning process, the annealing furnace tube is effectively cleaned by matching with trans-1, 2-dichloroethylene, and phosgene can be effectively avoided, because phosgene is rapidly decomposed into carbon dioxide and hydrogen chloride when encountering water vapor.
Example 1
The method for cleaning the solar cell annealing furnace pipe comprises the following specific implementation steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; pumping the annealing furnace tube to a negative pressure of 500 pa; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe; the temperature in the annealing furnace tube was raised to 950 ℃.
(2) Introducing oxygen into the annealing furnace tube from a section of inlet of the annealing furnace tube, and continuing for a time t1, wherein t1 is 5min, and the flow rate of the introduced oxygen is 3000 sccm;
(3) after 5min of oxygen introduction, in the process of keeping oxygen introduction, the oxygen introduction flow is 2500sccm, meanwhile, the trans-1, 2-dichloroethylene carried by the protective gas is used for carrying the trans-1, 2-dichloroethylene, the trans-1, 2-dichloroethylene carried by the protective gas is introduced into the annealing furnace tube, and the time is kept for T, wherein T is 1H, and the protective gas is nitrogen; the purity of Dichloroethylene (DCE) used in the invention is 7.5N grade, and the volume ratio of the introduced trans-1, 2-dichloroethylene carried by the protective gas to the introduced oxygen in the annealing furnace pipe is 1: 35.
(4) And after the trans-1, 2-dichloroethylene is introduced for the duration T, finishing the introduction of the trans-1, 2-dichloroethylene, and continuously introducing oxygen for the duration T2, wherein T2 is 5min, and the oxygen introduction flow rate is 2000sccm at the moment.
After cleaning the annealing furnace pipe, the annealing furnace pipe is used for production, and production related parameters are detected, wherein the specific parameters are shown in tables 1-2.
Example 2
The method for cleaning the solar cell annealing furnace pipe comprises the following specific steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; pumping the annealing furnace tube to a negative pressure of 250 pa; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe; the temperature in the annealing furnace tube was raised to 860 ℃.
(2) Introducing oxygen into the annealing furnace tube from a section of inlet of the annealing furnace tube, and continuing for t1, wherein t1 is 6.7min, and the flow rate of the introduced oxygen is 1500 sccm;
(3) after 6.7min of oxygen is introduced, in the process of keeping oxygen introduction, the oxygen introduction flow is 3100sccm, meanwhile, trans-1, 2-dichloroethylene is carried by using protective gas, the trans-1, 2-dichloroethylene carried by the protective gas is introduced into an annealing furnace tube for a time T, wherein T is 1H, and the protective gas is nitrogen; the purity of Dichloroethylene (DCE) used in the invention is 7.5N grade, and the volume ratio of the introduced trans-1, 2-dichloroethylene carried by the protective gas to the introduced oxygen in the annealing furnace pipe is 1: 37.
(4) And after the trans-1, 2-dichloroethylene is introduced for the duration T, ending the introduction of the trans-1, 2-dichloroethylene, and continuously introducing oxygen for T2, wherein T2 is 3.8min, and the oxygen introduction flow rate is 3500sccm at the moment.
Example 3
The method for cleaning the solar cell annealing furnace pipe comprises the following specific steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; pumping the annealing furnace tube to a negative pressure of 760 pa; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe; the temperature in the annealing furnace tube was raised to 950 ℃.
(2) Introducing oxygen into the annealing furnace tube from a section of inlet of the annealing furnace tube for a time t1, wherein t1 is 4min, and the flow rate of the introduced oxygen is 4200 sccm;
(3) after 4min of oxygen is introduced, in the process of keeping oxygen introduction, introducing oxygen at the flow rate of 1200sccm, simultaneously carrying trans-1, 2-dichloroethylene by using protective gas, introducing the trans-1, 2-dichloroethylene carried by the protective gas into an annealing furnace tube, and continuing for a time T, wherein T is 3H, and the protective gas is nitrogen; the purity of Dichloroethylene (DCE) used in the invention is 7.5N grade, and the volume ratio of the introduced trans-1, 2-dichloroethylene carried by the protective gas to the introduced oxygen in the annealing furnace pipe is 1: 32.
(4) And after the trans-1, 2-dichloroethylene is introduced for the duration T, ending the introduction of the trans-1, 2-dichloroethylene, and continuously introducing oxygen for the duration T2, wherein T2 is 6min, and the oxygen introduction flow rate is 3500 sccm.
Comparative example 1
The annealing furnace tube in the comparative example is not treated by trans-1, 2-dichloroethylene, the production process is completely the same as that of example 1, and relevant production parameters are detected, and specific parameters are shown in tables 1-2.
Table 1 comparative table of production parameters of example 1 and comparative example 1
TABLE 2 PID parameters comparison table for production of example 1 and comparative example 1
As can be seen from Table 1, the production parameters of the annealing furnace tubes treated with trans 1, 2-dichloroethylene were not much affected by the washing of trans 1, 2-dichloroethylene and the conversion efficiency was improved compared to the annealing furnace tubes not treated with trans 1, 2-dichloroethylene. In addition, as can be seen from table 2, the annealing furnace tube treated with trans-1, 2-dichloroethylene has a significantly reduced power attenuation as compared to the annealing furnace tube not treated with trans-1, 2-dichloroethylene as detected by PID. The reason is that in the process of cleaning the furnace tube, chlorine atoms can be separated and excited to form high-energy chlorine atoms with high activity, and the high-energy chlorine atoms can be combined with metal ions on the tube wall of the furnace to form stable chloride to be attached to the tube wall and not ionized to participate in oxide film formation or subsequent processes. Therefore, the problem that the battery piece is polluted and further PID (proportion integration differentiation) failure is caused is avoided. As can be seen from a comparison of FIGS. 1 and 2, the surface defects (spots are impurities) are significantly reduced after treatment with trans-1, 2-dichloroethylene.
In addition, the cell was constructed to provide a cell assembly having a 1.61% decay rate at a temperature of 85 deg.C, a relative humidity of 85% and a negative pressure of 1500V for 96 hours.
Comparative example 2
This example is essentially the same as example 1 except that cis-1, 2-dichloroethylene was fed in. The product is used for production, and production related parameters are detected, and specific parameters are shown in table 3.
Comparative example 3
This example is essentially the same as comparative example 2, but cis-1, 2-dichloroethylene was not introduced in this example. The production is carried out by using the compound, the parameters are the same as the comparative example 2, and the production related parameters are detected, and the specific parameters are shown in the table 3.
Comparative example 4
This example is essentially the same as example 1 except that 1, 1-dichloroethylene was fed in. The product is used for production, and relevant production parameters are detected, and specific parameters are shown in table 4.
Comparative example 5
This example is essentially the same as comparative example 4, but cis-1, 1-dichloroethylene was not introduced in this example. The production is carried out by using the compound, the parameters are the same as the comparative example 2, and the production related parameters are detected, and the specific parameters are shown in the table 4.
Table 3 comparative example 2 and comparative example 3 production parameter comparison table
Table 4 comparative example 4 and comparative example 5 production parameter comparison table
As can be seen from tables 3-4, after the annealing furnace rods are cleaned by using two isomers of cis-1, 2-dichloroethylene and 1, 1-dichloroethylene, no obvious efficiency gain is shown in the data, and as shown in FIGS. 3 and 4, the PL imaging is improved compared with that of comparative example 1, but a large amount of impurities still exist.
The applicant has analysed in connection with the three isomers of dichloroethylene itself, in which 1, 2-dichloroethylene, the olefin is bound to two carbons respectively, is more stable than 1, 1-dichloroethylene bound to one carbon, and in addition the number of olefin substitutions is the same for cis and trans 1, 2-dichloroethylene, the difference being that cis is distributed on the same side of the olefin and trans is distributed on both sides, the cis isomer being that two atoms or groups of atoms of the same electronegativity are on the same side of the molecule, and not being arranged symmetrically as for trans, so that the same amount of cis-trans isomeric olefin, the trans-gibbs free energy being lower than for cis and therefore more stable. Therefore, the 2 substances of 1, 1-dichloroethylene and cis-1, 2-dichloroethylene are easy to react and decompose with other impurities in the carried gas in the using process, the purity is reduced, and the cleaning effect of the substances is not stable with trans-1, 2-dichloroethylene in the long-time using process.
The invention has been described in detail hereinabove with reference to specific exemplary embodiments thereof. It will, however, be understood that various modifications and changes may be made without departing from the scope of the invention as defined in the appended claims. The detailed description and drawings are to be regarded as illustrative rather than restrictive, and any such modifications and variations are intended to be included within the scope of the present invention as described herein. Furthermore, the background is intended to be illustrative of the state of the art as developed and the meaning of the present technology and is not intended to limit the scope of the invention or the application and field of application of the invention.
Claims (10)
1. A cleaning method for a solar cell annealing furnace tube is characterized in that when the annealing furnace tube is cleaned, the temperature in the annealing furnace tube is firstly increased, air in the annealing furnace tube is pumped to negative pressure, and trans-1, 2-dichloroethylene carried by protective gas is introduced into the annealing furnace tube.
2. The cleaning method for the annealing furnace pipe of the solar cell piece according to claim 1, which comprises the following steps:
(1) exhausting the annealing furnace pipe to be cleaned, and exhausting the annealing furnace pipe to negative pressure; heating the annealing furnace pipe by using a heating device to raise the temperature in the annealing furnace pipe;
(2) introducing oxygen into the annealing furnace pipe from a section of inlet of the annealing furnace pipe, and keeping the oxygen for t 1;
(3) after the oxygen is introduced for the duration time T1, in the process of keeping the oxygen introduction, the trans-1, 2-dichloroethylene carried by the protective gas is used, and the trans-1, 2-dichloroethylene carried by the protective gas is introduced into the annealing furnace pipe for the duration time T;
(4) after the trans-1, 2-dichloroethylene is introduced for the duration T, the introduction of the trans-1, 2-dichloroethylene is ended, and the introduction of the oxygen is continued for the duration T2.
3. The cleaning method for the annealing furnace pipe of the solar cell piece according to claim 2, characterized in that the inside of the annealing furnace pipe is pumped to the negative pressure of 100Pa-1000Pa in the step (1).
4. The cleaning method for the annealing furnace pipe of the solar cell piece according to the claim 2, characterized in that the temperature in the annealing furnace pipe is raised to 900 ± 100 ℃ by heating with a heating device in the step (1).
5. The cleaning method for the annealing furnace pipe of the solar cell sheet as claimed in claim 2, wherein the oxygen gas is introduced for a time period t1 in the step (2), and the time period t1 is 5 ± 3 min; and (4) introducing oxygen for a duration of t2, wherein the t2 is 5 +/-3 min.
6. The cleaning method for the annealing furnace pipe of the solar cell sheet as claimed in claim 2, wherein the protective gas in the step (3) is nitrogen.
7. The method for cleaning the annealing furnace pipe of the solar cell piece according to claim 2, wherein the volume ratio of the trans-1, 2-dichloroethylene carried by the protective gas introduced in the step (3) to the oxygen introduced into the annealing furnace pipe is 1 (35 +/-5).
8. The cleaning method for the annealing furnace pipe of the solar cell piece according to claim 2, wherein the trans-1, 2-dichloroethylene carried by the protective gas introduced in the step (3) has a duration T, and the T is 0.5H-4H.
9. The cleaning method for the annealing furnace pipe of the solar cell piece as claimed in claim 2, wherein the flow rate of the oxygen introduced in the step (2) is as follows: 1000-; the flow of oxygen introduced in the step (4) is as follows: greater than 1000 sccm.
10. The cleaning method for the annealing furnace pipe of the solar cell piece as claimed in claim 2, wherein the flow rate of the introduced oxygen in the step (3) is as follows: 300-4000 sccm.
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| CN113061991A (en) * | 2021-03-23 | 2021-07-02 | 韩华新能源（启东）有限公司 | Preparation method for improving pyramid texture surface uniformity of monocrystalline silicon wafer and solar cell |
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