CN102738147B - 电光装置、投射型显示装置及电子设备 - Google Patents

电光装置、投射型显示装置及电子设备 Download PDF

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Publication number
CN102738147B
CN102738147B CN201210090900.0A CN201210090900A CN102738147B CN 102738147 B CN102738147 B CN 102738147B CN 201210090900 A CN201210090900 A CN 201210090900A CN 102738147 B CN102738147 B CN 102738147B
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CN
China
Prior art keywords
aforementioned
electrode
pixel
pixel electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210090900.0A
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English (en)
Chinese (zh)
Other versions
CN102738147A (zh
Inventor
伊藤智
立野善丈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN102738147A publication Critical patent/CN102738147A/zh
Application granted granted Critical
Publication of CN102738147B publication Critical patent/CN102738147B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN201210090900.0A 2011-04-01 2012-03-30 电光装置、投射型显示装置及电子设备 Expired - Fee Related CN102738147B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP081642/2011 2011-04-01
JP2011081642A JP5810589B2 (ja) 2011-04-01 2011-04-01 電気光学装置、投射型表示装置、および電子機器

Publications (2)

Publication Number Publication Date
CN102738147A CN102738147A (zh) 2012-10-17
CN102738147B true CN102738147B (zh) 2017-03-01

Family

ID=46926810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210090900.0A Expired - Fee Related CN102738147B (zh) 2011-04-01 2012-03-30 电光装置、投射型显示装置及电子设备

Country Status (3)

Country Link
US (1) US9299729B2 (enExample)
JP (1) JP5810589B2 (enExample)
CN (1) CN102738147B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
KR102023436B1 (ko) * 2013-01-30 2019-09-20 엘지디스플레이 주식회사 터치 전극을 포함하는 디스플레이 장치
JP2016080809A (ja) * 2014-10-15 2016-05-16 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、電子機器
JP7647194B2 (ja) * 2021-03-12 2025-03-18 セイコーエプソン株式会社 電気光学装置および電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038410A (zh) * 2006-03-15 2007-09-19 爱普生映像元器件有限公司 液晶装置及电子设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317433A (en) 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JP3092761B2 (ja) 1991-12-02 2000-09-25 キヤノン株式会社 画像表示装置及びその製造方法
KR20010032543A (ko) 1997-11-28 2001-04-25 모리시타 요이찌 반사형 표시소자 및 반사형 표시소자를 이용한 영상장치
JP2000137246A (ja) 1997-11-28 2000-05-16 Matsushita Electric Ind Co Ltd 反射型表示素子及び反射型表示素子を用いた映像装置
JP4026398B2 (ja) 2002-04-24 2007-12-26 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4021392B2 (ja) * 2002-10-31 2007-12-12 セイコーエプソン株式会社 電気光学装置及び電子機器
JP3791517B2 (ja) * 2002-10-31 2006-06-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4186767B2 (ja) * 2002-10-31 2008-11-26 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2006243579A (ja) * 2005-03-07 2006-09-14 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP4821183B2 (ja) * 2005-06-24 2011-11-24 セイコーエプソン株式会社 電気光学装置及びこれを備えた電子機器
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
JP5034529B2 (ja) * 2007-02-01 2012-09-26 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
US8144281B2 (en) * 2007-08-09 2012-03-27 Seiko Epson Corporation Electro-optical device having a light shielding film with first, second, and third portions
JP2010096966A (ja) 2008-10-16 2010-04-30 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
JP5589359B2 (ja) * 2009-01-05 2014-09-17 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2010191408A (ja) * 2009-01-23 2010-09-02 Seiko Epson Corp 電気光学装置及び電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038410A (zh) * 2006-03-15 2007-09-19 爱普生映像元器件有限公司 液晶装置及电子设备

Also Published As

Publication number Publication date
JP5810589B2 (ja) 2015-11-11
JP2012215744A (ja) 2012-11-08
CN102738147A (zh) 2012-10-17
US20120249905A1 (en) 2012-10-04
US9299729B2 (en) 2016-03-29

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