CN102723265A - 一种硅片的铝掺杂方法 - Google Patents
一种硅片的铝掺杂方法 Download PDFInfo
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- CN102723265A CN102723265A CN201210200799XA CN201210200799A CN102723265A CN 102723265 A CN102723265 A CN 102723265A CN 201210200799X A CN201210200799X A CN 201210200799XA CN 201210200799 A CN201210200799 A CN 201210200799A CN 102723265 A CN102723265 A CN 102723265A
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- silicon chip
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CN201210200799.XA CN102723265B (zh) | 2012-06-18 | 2012-06-18 | 一种硅片的铝掺杂方法 |
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CN201210200799.XA CN102723265B (zh) | 2012-06-18 | 2012-06-18 | 一种硅片的铝掺杂方法 |
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CN102723265A true CN102723265A (zh) | 2012-10-10 |
CN102723265B CN102723265B (zh) | 2014-12-24 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103572256A (zh) * | 2013-11-08 | 2014-02-12 | 蚌埠玻璃工业设计研究院 | 一种制备p型掺杂非晶硅碳薄膜的装置 |
CN103590015A (zh) * | 2013-11-08 | 2014-02-19 | 蚌埠玻璃工业设计研究院 | 一种p型掺杂非晶硅薄膜的制备方法及装置 |
CN105870434A (zh) * | 2016-06-06 | 2016-08-17 | 南昌大学 | 一种硅粉掺杂的方法 |
US9617639B2 (en) | 2013-03-18 | 2017-04-11 | Apple Inc. | Surface-tensioned sapphire plate |
US9718249B2 (en) | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US11269374B2 (en) | 2019-09-11 | 2022-03-08 | Apple Inc. | Electronic device with a cover assembly having an adhesion layer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1520587A (en) * | 1975-06-06 | 1978-08-09 | Quartz & Silice | Doped silica glass |
US4720469A (en) * | 1985-06-10 | 1988-01-19 | Bbc Brown, Boveri & Company, Limited | Method for diffusing aluminum |
US5918140A (en) * | 1997-06-16 | 1999-06-29 | The Regents Of The University Of California | Deposition of dopant impurities and pulsed energy drive-in |
JP2000091256A (ja) * | 1998-09-10 | 2000-03-31 | Naoetsu Electronics Co Ltd | 半導体シリコン基板の製造方法 |
CN1328344A (zh) * | 2001-07-20 | 2001-12-26 | 中国科学院上海冶金研究所 | 以氧化铝为埋层的绝缘层上硅结构的衬底材料及制备方法 |
CN101053065A (zh) * | 2004-07-26 | 2007-10-10 | 于尔根·H·维尔纳 | 用线性聚焦的激光束对固体进行激光掺杂以及基于所述方法制造太阳能电池发射极 |
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2012
- 2012-06-18 CN CN201210200799.XA patent/CN102723265B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1520587A (en) * | 1975-06-06 | 1978-08-09 | Quartz & Silice | Doped silica glass |
US4720469A (en) * | 1985-06-10 | 1988-01-19 | Bbc Brown, Boveri & Company, Limited | Method for diffusing aluminum |
US5918140A (en) * | 1997-06-16 | 1999-06-29 | The Regents Of The University Of California | Deposition of dopant impurities and pulsed energy drive-in |
JP2000091256A (ja) * | 1998-09-10 | 2000-03-31 | Naoetsu Electronics Co Ltd | 半導体シリコン基板の製造方法 |
CN1328344A (zh) * | 2001-07-20 | 2001-12-26 | 中国科学院上海冶金研究所 | 以氧化铝为埋层的绝缘层上硅结构的衬底材料及制备方法 |
CN101053065A (zh) * | 2004-07-26 | 2007-10-10 | 于尔根·H·维尔纳 | 用线性聚焦的激光束对固体进行激光掺杂以及基于所述方法制造太阳能电池发射极 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9718249B2 (en) | 2012-11-16 | 2017-08-01 | Apple Inc. | Laminated aluminum oxide cover component |
US9617639B2 (en) | 2013-03-18 | 2017-04-11 | Apple Inc. | Surface-tensioned sapphire plate |
CN103572256A (zh) * | 2013-11-08 | 2014-02-12 | 蚌埠玻璃工业设计研究院 | 一种制备p型掺杂非晶硅碳薄膜的装置 |
CN103590015A (zh) * | 2013-11-08 | 2014-02-19 | 蚌埠玻璃工业设计研究院 | 一种p型掺杂非晶硅薄膜的制备方法及装置 |
CN103572256B (zh) * | 2013-11-08 | 2016-03-09 | 蚌埠玻璃工业设计研究院 | 一种制备p型掺杂非晶硅碳薄膜的装置 |
CN103590015B (zh) * | 2013-11-08 | 2016-03-09 | 蚌埠玻璃工业设计研究院 | 一种p型掺杂非晶硅薄膜的制备方法及装置 |
CN105870434A (zh) * | 2016-06-06 | 2016-08-17 | 南昌大学 | 一种硅粉掺杂的方法 |
US11269374B2 (en) | 2019-09-11 | 2022-03-08 | Apple Inc. | Electronic device with a cover assembly having an adhesion layer |
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Publication number | Publication date |
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CN102723265B (zh) | 2014-12-24 |
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Address after: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee after: Artes sunshine Power Group Co. Ltd. Patentee after: Suzhou Canadian Solar Inc. Address before: 215129 Suzhou high tech Zone, Jiangsu Province, Lu Shan Road, No. 199, No. Co-patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Suzhou Canadian Solar Inc. |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |