CN102714187B - The pedestal of electronic parts package and electronic parts package - Google Patents
The pedestal of electronic parts package and electronic parts package Download PDFInfo
- Publication number
- CN102714187B CN102714187B CN201180005694.2A CN201180005694A CN102714187B CN 102714187 B CN102714187 B CN 102714187B CN 201180005694 A CN201180005694 A CN 201180005694A CN 102714187 B CN102714187 B CN 102714187B
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- Prior art keywords
- terminal electrode
- pedestal
- long limit
- electronic parts
- parts package
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 title claims abstract description 151
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 description 48
- 208000037656 Respiratory Sounds Diseases 0.000 description 41
- 239000010453 quartz Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000005452 bending Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15313—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a land array, e.g. LGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10068—Non-printed resonator
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The pedestal of electronic parts package keeps electronic unit element, and the bottom surface of described pedestal is rectangle when overlooking.Define in the bottom surface of described pedestal and use conductive bonding material with the circuit substrate of outside and the terminal electrode of a pair rectangular shape engaged.Described pair of terminal electrode is formed with symmetric shape mutually.The long limit of described each terminal electrode is close with the end on the long limit of described bottom surface or formed with connecting.In addition, the long limit of described each terminal electrode and the long limit of described bottom surface configure side by side, and the size on the long limit of described each terminal electrode becomes the size of the half on the long limit exceeding described bottom surface.
Description
Technical field
The present invention relates to pedestal and the electronic parts package of the middle electronic parts packages used such as electronic equipment.
Background technology
As the example of electronic unit needing gas-tight seal, the Piezodectric vibration devices such as quartz crystal unit, crystal filter, crystal oscillator can be enumerated.In these each products, all define metal film electrode on the surface of crystal vibration plate, and in order to carry out gas-tight seal from this metal film electrode of air conservation to crystal vibration plate (being specifically metal film electrode).
In these Piezodectric vibration devices, according to the requirement of the surface installationization of parts, the structure of receiving piezoelectric vibrating plate (crystal vibration plate) in the encapsulation be made up of insulating material such as potteries airtightly increases.Such as, in patent documentation 1, disclose the lid (cover) that the pedestal (installation base plate) be made up of ceramic material that comprises the equipped section with crystal vibration plate and section are inverse spills, the encapsulation sealed airtightly is joined to the structure of circuit substrate to crystal vibration plate by conductive bonding material lift-launchs such as scolding tin.
In this Piezodectric vibration device in the past, terminal electrode is defined in the bottom surface of pedestal, in order to confirm the connection status spreading realization by scolding tin (conductive bonding material), terminal electrode is stretched out from the end aspect-oriented of pedestal by castellation (castellation) portion being formed at the side of pedestal.
But, in the circuit substrate carrying this Piezodectric vibration device in the past, according to the easiness of processing and the advantage of cost-effectivenes, widely use the so-called glass epoxy substrate that cancellous glass fiber impregnated epoxide resin material is obtained.In addition, on the electrode pattern top of this circuit substrate, by methods such as silk screen printings, solder(ing) paste is coated with.Then, carry with the state of the terminal electrode of the encapsulation to the overlapping above-mentioned Piezodectric vibration device of the electrode pattern of this circuit substrate, and make solder(ing) paste melting by melting furnace (heating furnace etc.) and on circuit substrate, scolding tin joint carried out to Piezodectric vibration device.
Patent documentation 1: No. 2002-76813, Japanese Unexamined Patent Publication
Summary of the invention
But, according to above-mentioned technology in the past, due to coefficient of thermal expansion differences between electronic parts package and circuit substrate, in the scolding tin engaging these electronic parts packages and circuit substrate, produce stress, and sometimes crackle occur.Especially, employing the ceramic materials such as aluminium oxide as electronic parts package, employing in the combining structure of glass epoxy substrate as circuit substrate, this shortcoming is remarkable.In addition, above-mentioned technology is in the past used for the electronic parts package of vehicle-mounted electronic equipment.Vehicle-mounted electronic equipment alleged herein uses under harsh environment, when employing electronic equipment (comprising electronic parts package and circuit substrate) under high temperature and low temperature environment, due to the difference of the thermal coefficient of expansion of electronic parts package and the thermal coefficient of expansion of circuit substrate, be easy to produce fatigue rupture from scolding tin.
Like this, deposit following problem: under high temperature and low temperature environment, become remarkable in the problem of the scolding tin crackle less becoming problem in common temperature environment, if and then to electronic parts package and circuit substrate applying impact, be then peeling from scolding tin fragmented parts.
In addition, when the scolding tin docking the conjunction electronic parts package and circuit substrate that there is coefficient of thermal expansion differences between electronic parts package and circuit substrate as described above creates stress, more from the situation that scolding tin crackle occurs close to the region as the peripheral end of the bottom surface of the pedestal of maximum stress origination point.The scolding tin crackle of this generation expands towards the central point of the bottom surface of pedestal 1.Then, scolding tin crackle finally develops into that terminal electrode is overall and the junction point utilizing scolding tin to engage of electronic parts package and circuit substrate is stripped.Due to this stripping, the state that the terminal electrode becoming electronic parts package is peeled off completely from circuit substrate, the terminal electrode of electronic parts package and the electrical connection of circuit substrate disappear (following, this state is called open state).
The present invention completes to solve the problem, and its object is to the pedestal, the electronic parts package that provide a kind of electronic parts package, prevent scolding tin crackle and improve electronic parts package and circuit substrate lift-launch engage reliability.
In order to reach above-mentioned purpose, the invention provides a kind of pedestal of electronic parts package, keep electronic unit element, it is characterized in that, the bottom surface of this pedestal is rectangle when overlooking, the terminal electrode of a pair rectangular shape using conductive bonding material to engage with the circuit substrate of outside is defined in described bottom surface, described pair of terminal electrode is formed with symmetric shape mutually, the long limit of described each terminal electrode is close with the end on the long limit of described bottom surface or formed with connecting, and the long limit of described each terminal electrode and the long limit of described bottom surface configure side by side, the size on the long limit of described each terminal electrode is above the size of the half on the long limit of described bottom surface.
By said structure, even if create coefficient of thermal expansion differences what form electronic parts package between this pedestal and circuit substrate, the impact of the stress deformation for the conductive bonding material engaging this pedestal and circuit substrate also can be alleviated.
Especially, described pair of terminal electrode is formed with symmetric shape mutually, the long limit of described terminal electrode is close with the end, long limit of described bottom surface or formed with connecting, and the long limit of the long limit of described terminal electrode and described bottom surface configures side by side, to exceed the size of the half on the long limit of described bottom surface, form the size on the long limit of described each terminal electrode, no matter thus described each terminal electrode is formed at which position on the long limit of described bottom surface, described pair of terminal electrode near the long limit central authorities of described bottom surface on the short side direction of described bottom surface the region of subtend guaranteed, the engaging zones engaged by conductive bonding material in this region is guaranteed.For this engaging zones, the impact of the stress deformation that the immediate vicinity from the peripheral end of described bottom surface towards described bottom surface produces can be alleviated, further, the generation of the stress deformation that the peripheral end from the immediate vicinity of described bottom surface towards described bottom surface can also be suppressed to produce.
In addition, according to the present invention, described pair of terminal electrode is formed with symmetric shape mutually, the long limit of described terminal electrode is close with the end, long limit of described bottom surface or formed with connecting, and the long limit of described terminal electrode and the long limit of described bottom surface configure side by side, to exceed the size of the half on the long limit of described bottom surface, form the size on the described long limit of each terminal electrode, so along the long side direction of described bottom surface, a ground coating electrically conductive grafting material.Therefore, it is possible to suppress the generation of the stress deformation of the long side direction of this pedestal, the impact of the coefficient of thermal expansion differences of the short side direction to described bottom surface can be relaxed.Its result, can suppress the generation of crackle itself.And then, according to this structure, a ground continuously coating conductive bonding material on described terminal electrode incessantly, so compared to the such as mode of coating electrically conductive grafting material across 2 electrodes, can not crack the square end towards described terminal electrode in described terminal electrode.Namely, the happening part of crackle can be made to be limited to 1 position, even if just in case there occurs crackle, the crackle from multiple directions that also can not to occur with multiple position be starting point, can suppress described terminal electrode become open state from circuit substrate and do not play function as electronic unit.
In addition, in said structure, can also on the top of described terminal electrode, be stackedly integrally formed the area of plane projection less than described terminal electrode.
Inventor finds, for the major part of the crackle generation example of conductive bonding material, the starting point of the crackle of conductive bonding material is the bottom end of terminal electrode, for the crackle occurred in the bottom end of terminal electrode, if do not become the part of the obstacle of crack growth, then crackle develops substantially in parallel from the basal surface position of its starting point and terminal electrode.According to this discovery, according to this structure, on the top of described pair of terminal electrode, stackedly be integrally formed the area of plane projection less than described terminal electrode, so except above-mentioned action effect, stagger in the position of the crack growth of the immediate vicinity of the position of the crack growth near the end of the long side direction of the described terminal electrode that the crackle of conductive bonding material can also be made to occur at first and the long side direction of described terminal electrode.The crackle developed substantially in parallel with the basal surface position of described terminal electrode is wanted to be subject to the impact of the end of the described projection of the end close to described terminal electrode at first and its angle is changed to the direction of the circuit substrate that the bottom surface of terminal electrode is parallel described in Xiang Buyu.That is, according to this structure, the bending point of crackle can be on the way set.Owing to there is the bending point of this crackle, the development of crackle can be delayed.As above result, the electricapparatus connectivity of terminal electrode can be improved, described terminal electrode can be suppressed simultaneously to become open state and do not play function as electronic unit.
In addition, in said structure, can also be formed symmetrically for the center line line of the short side direction of the relatively described bottom surface of described pair of terminal electrode.
In the structure shown here, except above-mentioned action effect, even if create coefficient of thermal expansion differences what form electronic parts package between this pedestal and circuit substrate, also can disperse equably to the short side direction of the few described bottom surface of the impact of its stress.
In addition, in said structure, can also be that the central point point symmetry ground of the relatively described bottom surface of described pair of terminal electrode is formed.
In the structure shown here, except above-mentioned action effect, even if create coefficient of thermal expansion differences what form electronic parts package between this pedestal and circuit substrate, the mode that also can rotate to the short side direction of the few described bottom surface of the impact of its stress with the central point of the bottom surface around pedestal is disperseed equably.
In addition, in said structure, can also be that the width dimensions of the gap area between described terminal electrode is identical with the width dimensions of the short side direction of described terminal electrode.
In the structure shown here, except above-mentioned action effect, though form electronic parts package create coefficient of thermal expansion differences between this pedestal and circuit substrate, its stress also can be made to disperse equably further.As a result, the impact of the stress deformation for the conductive bonding material engaging this pedestal and circuit substrate can be alleviated further.
In addition, in order to reach above-mentioned purpose, a kind of electronic parts package of the present invention, has the pedestal of the invention described above and described electronic unit element is carried out to the lid of gas-tight seal.
According to the present invention, there is pedestal of the present invention, so the action effect same with pedestal of the present invention can be had.Its result, can use pedestal of the present invention to carry out gas-tight seal, the reliability that the lift-launch improving circuit substrate at an easy rate engages.
In said structure, multiple electrode can also be had for described terminal electrode, use multiple electrodes of described terminal electrode, join outside circuit substrate to by conductive bonding material.
According to the present invention, scolding tin crackle can be prevented and improve electronic parts package and circuit substrate lift-launch engage reliability.
Accompanying drawing explanation
Fig. 1 is the bottom view of the surface installing type quartz crystal unit that embodiments of the present invention are shown.
Fig. 2 is the profile along the A-A line surface installing type quartz crystal unit of Fig. 1 being carried the state of circuit substrate.
Fig. 3 is the profile along the B-B line surface installing type quartz crystal unit of Fig. 1 being carried the state of circuit substrate.
Fig. 4 is the bottom view of the surface installing type quartz crystal unit of the variation 1 that embodiments of the present invention are shown.
Fig. 5 is the bottom view of the surface installing type quartz crystal unit of the variation 2 that embodiments of the present invention are shown.
Fig. 6 is the bottom view of the surface installing type quartz crystal unit of the variation 3 that embodiments of the present invention are shown.
Fig. 7 is the bottom view of the surface installing type quartz crystal unit of the variation 4 that embodiments of the present invention are shown.
Fig. 8 is the bottom view of the surface installing type quartz crystal unit of the variation 5 that embodiments of the present invention are shown.
Fig. 9 is the bottom view of the surface installing type quartz crystal unit of the variation 6 that embodiments of the present invention are shown.
(symbol description)
1: pedestal; 2: lid; 3: crystal vibration plate (electronic unit element); 4: circuit substrate.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.In addition, in each embodiment shown below, illustrate in the encapsulation as the quartz crystal unit (hereinafter referred to as quartz crystal unit) being encapsulated in surface installing type of electronic component-use and apply situation of the present invention.In addition, the quartz crystal unit of present embodiment is used for the vehicle-mounted electronic equipment used under the harsh environment of high temperature and low temperature, is used in particular for ECU(EngineControlUnit, control unit of engine) etc. bear the electronic equipment of major part.
The quartz crystal unit of embodiments of the present invention as shown in Figure 1, Figure 2, Figure 3 shows, comprise as electronic unit element crystal vibration plate 3, have upper opening recess and keep the pedestal 1 of (storage) crystal vibration plate 3 and engage with the peristome of pedestal 1 and the crystal vibration plate 3 kept in pedestal 1 is carried out to the lid 2 of gas-tight seal.
Pedestal 1 is cuboid as a whole, by the suitable stacked Structure composing of the potteries such as aluminium oxide and the electric conducting material such as tungsten, molybdenum.This pedestal 1 as shown in Figure 2 and Figure 3, has section and is arranged at the dyke 11 around it depending on the incorporating section 10 of spill with in the mode of surrounding incorporating section 10.Specifically, pedestal 1 comprises the pedestal matrix 1a of the pottery of the writing board shape of rectangle (overlooking rectangle) and middle body significantly wears and the framework 1b of the pottery that overall dimension (plan shape size) is roughly equal with pedestal matrix 1a, and pedestal matrix 1a, framework 1b and containment member 11a sinter integratedly.In addition, dyke 11(framework 1b) upper surface smooth, dyke 11 defines containment member 11a(encapsulant, metal level etc.).In the present embodiment, show the structure such as defining glass as containment member 11a, but the material of containment member 11a and can cover the material of 2 and at random set according to pedestal 1, is not limited thereto.Such as, when lid 2 is crown caps, as containment member 11a, also can the upper surface of the metal layer be made up of tungsten, molybdenum etc. formed nickel coating, Gold plated Layer each layer or and then form becket on the top of these each layers.
In addition, the side of the pedestal 1 of 4 angles K1, K2, K3, K4 in the periphery (overlooking outer peripheral edges) of pedestal 1, as shown in Figure 1, from the bottom surface of pedestal 1 towards end face (above) define castellation portion C1, C2, C3, C4 up and down.In addition, as shown in Figure 1,3, the bottom surface at pedestal 1(specifically pedestal 1) long limit central authorities near the side of pedestal 1, from the bottom surface of pedestal 1 towards end face (above) define castellation portion C5, C6 up and down.
The bottom surface of pedestal 1 is rectangle when overlooking, and along long a pair limit of the bottom surface of this pedestal 1, form respectively the circuit substrate 4(of outside with reference to Fig. 2) use conductive bonding material D and the terminal electrode 12,13 overlooking rectangular shape for a pair that engages.These pair of terminal electrodes 12,13 as shown in Figure 1, are formed with symmetrical shape.Specifically, relatively with formed symmetrically by the parallel lines P-P line line on the long limit on the long limit of the bottom surface along pedestal 1 of the central point O of the bottom surface of the pedestal 1 shown in Fig. 1.The end, long limit of each long limit of terminal electrode 12,13 and the bottom surface of pedestal 1 is closely formed, and the long limit of the long limit of each terminal electrode 12,13 and the bottom surface of pedestal 1 configures side by side.The structure of each terminal electrode 12,13 formed in the bottom surface by this pedestal 1, even if create coefficient of thermal expansion differences between pedestal 1 and circuit substrate 4, also can disperse to the short side direction of the bottom surface of the few pedestal 1 of the impact of its stress equably.
In addition, in the present embodiment, as shown in Figure 1, to exceed the size of the half of the long limit size L1 of the bottom surface of pedestal 1, the long limit size L2 of each terminal electrode 12,13 is constituted.No matter each terminal electrode 12,13 is formed at which position on the long limit of the bottom surface of pedestal 1, the region of subtend on the short side direction of the bottom surface of pedestal 1 near the long limit central authorities of the bottom surface of pedestal 1 can both be guaranteed more reliably.Especially, the ratio of the long limit size L1 of the bottom surface of the long limit size L2 opposite base 1 of each terminal electrode 12,13 is preferably made to become more than 70%.In the present embodiment, the long limit size 2.5mm of the bottom surface of opposite base 1, forms the long limit size of terminal electrode 12,13 with 2.3mm, ratio is formed with 92%.In addition, in the present embodiment, the long limit size L2 of each terminal electrode 12,13 is less than the long limit size L1 of the bottom surface of pedestal 1.According to this execution mode, be the mode of same size compared to the long limit size L1 of the long limit size L2 of each terminal electrode 12,13 and the bottom surface of pedestal 1, eliminate and to form joint deviation together and preferred with the fillet (fillet) of conductive bonding material D.
In addition, in the present embodiment, as shown in Figure 1, the width dimensions H3 of the gap area between the width dimensions H2 of the width dimensions H1 of the short side direction of terminal electrode 12, the short side direction of terminal electrode 13 and these each terminal electrodes is formed as identical (also comprise those skilled in the art expect roughly the same), and the size being configured to the minor face of the bottom surface to pedestal 1 carries out 3 deciles.Thus, even if create coefficient of thermal expansion differences between pedestal 1 and circuit substrate 4, its stress also can be made to disperse more equably, the impact of the stress deformation of the conductive bonding material D for engaged with base 1 and circuit substrate 4 can be alleviated further.
As shown in Figure 1, 2, each terminal electrode 12,13 formed in the bottom surface of the inside of pedestal 1 via the side terminal electrode 121,131 formed in castellation portion C5, C6 electrode pad 122,132(diagram omit electrode pad 132) stretch out and be electrically connected.
The metal material such as tungsten, molybdenum and pedestal 1 are sintered integratedly and form metal layer, and forms nickel plating at an upper portion thereof, and formed gold-plated at an upper portion thereof, and constitute these terminal electrodes 12,13, side terminal electrode 121,131, electrode pad 122,132.
On the top of terminal electrode 12,13, form respectively with one heart and and projection 12B, 13B of roughly the same shape (overlook similar shape) little a little compared to each terminal electrode 12,13 area of plane.These projections 12B, 13B has been integrally formed with the metallization material (tungsten, molybdenum etc.) of the stacked identical material of roughly the same shape on the metal layer top of terminal electrode 12,13.Therefore, it is possible to extremely easily and form described projection 12B, 13B at an easy rate.In addition, these metallization materials and pedestal 1 are sintered integratedly, and form nickel plating on this metal layer top, and formed gold-plated at an upper portion thereof, and constitute these terminal electrode 12,13 and projection 12B, 13B.
In addition, the long limit size L2 of relatively each terminal electrode 12,13, constitutes the long limit size L3 of projection 12B, 13B of each terminal electrode 12,13 with more than 90%.In addition, for the end of each terminal electrode 12,13 to the width dimensions W1 ~ W4 of end of each projection 12B, 13B, the scope being in 0.01 ~ 0.5mm is configured to.Specifically, in the present embodiment, make the long limit size of terminal electrode 12,13 become 2.3mm, make the long limit size of projection 12B, 13B become 2.1mm, the ratio of the long limit size L2 of the relatively each terminal electrode of long limit size L3 12,13 of projection 12B, 13B is about 91%.In addition, width dimensions W1 ~ W4 is made to become about 0.1mm.
Like this, by being formed on terminal electrode 12,13 and terminal electrode 12,13 concentric and projection 12B, 13B of roughly the same shape (overlooking similar shape), for the crackle that any plane direction of terminal electrode 12,13 occurs, the development of crackle can be delayed.In addition, by being formed projection 12B, 13B with size ratio as described above, width dimensions, obtain little a little compared to terminal electrode 12,13 area of plane and roughly the same shape (overlooking similar shape) projection 12B, 13B, and by forming such projection 12B, 13B on terminal electrode 12,13, the starting stage that can occur at crackle, the development angle of crackle is made to change and the bending point of crackle is set.By arranging the bending point of this crackle, compared to the mode not forming projection 12B, 13B on terminal electrode 12,13, the development of crackle significantly can be suppressed.Its result, becomes following preferred mode: the electricapparatus connectivity that can improve terminal electrode 12,13 further, can prevent terminal electrode 12,13 from becoming open state and cannot play function as electronic unit further simultaneously.
On electrode pad 122,132, carry electronic unit element alleged in crystal vibration plate 3(the present invention).At the surface back side of crystal vibration plate 3, define not shown pair of exciting and extraction electrode.Such as, at the surface back side (from crystal vibration plate 3) of crystal vibration plate 3 according to the order of chromium, gold or the order according to chromium, gold, chromium or the order according to chromium, silver, chromium or the order according to chromium, silver, stacked and define pair of exciting and extraction electrode.These each electrodes (pair of exciting and extraction electrode) can by vacuum vapour deposition, sputter the film forming method such as around-France and formed.Then, by the extraction electrode of conductive bonding material (not shown) to electrode pad 122,132 conductive bond crystal vibration plate 3, in pedestal 1, crystal vibration plate 3 is maintained.Such as, in the conductive bond of the exciting electrode of crystal vibration plate 3 and the electrode pad 122,132 of pedestal 1, the conductive bonding materials such as electroconductive resin bonding agent, metal coupling, metal-plated projection, solder can be used.
As shown in Figure 2,3, in the lid 2 pedestal 1 being carried out to gas-tight seal, employ the example defining the containment member 11a such as glass sealing material in the ceramic material such as aluminium oxide of tabular.The plan shape of lid 2 becomes roughly the same with the plan shape of pedestal 1 or less than it some structures.In addition, as lid 2, being not limited to ceramic material, also can be glass material, metal material.
In the incorporating section 10 of the pedestal 1 be made up of said structure, accommodate crystal vibration plate 3(specifically on electrode pad 122,132, carry crystal vibration plate 3), and cover crystal vibration plate 3 with lid 2, by utilizing the methods such as the melting joint of heating furnace, gas-tight seal is carried out to crystal vibration plate 3, thus quartz crystal unit (electronic parts package) completes.In addition, as the method utilizing pedestal 1 and lid 2 pairs of crystal vibration plates 3 to carry out gas-tight seal, be not limited to melting and engage, according to various material (pedestal, lid, containment member etc.), the additive methods such as welding joint, welding can be used.In addition, as shown in Figure 2, on the top of the electrode pattern 41,42 of the circuit substrate 4 be made up of glass epoxy resin material, the finished goods of quartz crystal unit is engaged via conductive bonding material D such as such as scolding tin.
Next, in the diagram, as variation 1, above-mentioned modified embodiment of the present embodiment is shown.
In variation 1, relative present embodiment, the relation of each terminal electrode 12,13 and the width dimensions of gap area and each terminal electrode 12,13 to stretch out structure different, other parts have employed same structure.The following describes only the dissimilarity with present embodiment.
In variation 1, make the width dimensions H2 of the width dimensions H1 of the short side direction of terminal electrode 12 and the short side direction of terminal electrode 13 become same width dimensions, make the width dimensions H3 of the gap area between these each terminal electrodes 12,13 be formed as being less than H1 and H2.Thus, even if create coefficient of thermal expansion differences between pedestal 1 and circuit substrate 4, its impact also can be alleviated further.
In addition, in variation 1, in angle K1, K2, K3, K4 of pedestal 1, form castellation portion C1, C2, C3, C4 respectively, do not form castellation portion C5, C6 on the long limit of pedestal 1.Therefore, each terminal electrode 12,13 extends to castellation portion C1, C2, C3, C4, the not shown electrode pad 122,132 formed in the bottom surface of the inside of pedestal 1 via the side terminal electrode 121,131,123,133 formed in castellation portion C1, C2, C3, C4 stretches out, and is electrically connected with electrode pad 122,132.By this structure, can improve the intensity of 1 of pedestal, terminal electrode 12,13 electric stretches out more reliable.
Next, in Figure 5, as variation 2, above-mentioned modified embodiment of the present embodiment is shown.
In variation 2, the configuration of each terminal electrode 12,13 in the bottom surface of pedestal 1 is different, and each terminal electrode 12,13 is formed respectively to each K1, K3 with offseting, and the central point O of the bottom surface of opposite base 1 is partial to diagonal position (K1 and K3) and point symmetry ground is formed.
In this variation 2, the dimension scale of the long limit size L1 of the bottom surface of the long limit size L2 opposite base 1 of each terminal electrode 12,13 is 76%.Specifically, in variation 2, the long limit size of the bottom surface of pedestal 1 becomes 2.5mm, and the long limit size of terminal electrode 12,13 becomes 1.9mm.
In addition, in variation 2, the width dimensions H3 of the gap area between the width dimensions H2 of the width dimensions H1 of the short side direction of terminal electrode 12, the short side direction of terminal electrode 13 and these each terminal electrodes becomes identical (also comprise those skilled in the art can expect roughly the same).
In addition, in variation 2, in angle K1, K2, K3, K4 of pedestal 1, form castellation portion C1, C2, C3, C4 respectively, do not form castellation portion C5, C6 on the long limit of pedestal 1.Each terminal electrode 12,13 extends to castellation portion C1, C3, the not shown electrode pad 122,132 formed in the bottom surface of the inside of pedestal 1 via the side terminal electrode 121,131 formed in castellation portion C1, C3 stretches out, and is electrically connected with electrode pad 122,132.In this variation 2, even if create coefficient of thermal expansion differences between pedestal 1 and circuit substrate 4, also to the short side direction of the bottom surface of the few pedestal 1 of the impact of its stress, can disperse equably in the mode that the central point O of the bottom surface around pedestal 1 rotates.In addition, pedestal 1 intensity also can improve.
Next, in figure 6, as variation 3, above-mentioned modified embodiment of the present embodiment is shown.
Variation 3 is compared to present embodiment, and the shape of each terminal electrode 12,13 in the bottom surface of pedestal 1 is different, and other parts have employed same structure.The following describes only the dissimilarity with present embodiment.
In variation 3, the configuration of each terminal electrode 12,13 in the bottom surface of pedestal 1 is different, and each terminal electrode 12,13 is formed respectively to each K1, K3 with offseting, and the central point O of the bottom surface of opposite base 1 is partial to diagonal position (K1 and K3) and point symmetry ground is formed.In addition, each terminal electrode 12,13 is not only formed along the long limit of the bottom surface of pedestal 1, and then is also formed along the minor face of the bottom surface of pedestal 1, in the bottom surface of pedestal 1, be configured as L-shaped.In this variation 3, terminal electrode 12,13 also becomes a pair relation, is mutually formed with symmetric shape.
Specifically, terminal electrode 12 with angle K1 for bending point (base), close with the end on the long limit of the bottom surface with pedestal 1 or connect state, long side direction along the bottom surface of pedestal 1 is formed, and, close with the end of the minor face of the bottom surface with pedestal 1 or connect state, the short side direction along the bottom surface of pedestal 1 is formed, and is configured as L-shaped.
In addition, terminal electrode 13 with angle K3 for bending point (base), close with the end on the long limit of the bottom surface with pedestal 1 or connect state, long side direction along the bottom surface of pedestal 1 is formed, and state that is close with the end of the minor face of the bottom surface with pedestal 1 or that connect, short side direction along the bottom surface of pedestal 1 is formed, and is configured as L-shaped.
According to above-mentioned variation 3, even if at pedestal 1 and circuit substrate 4(with reference to Fig. 3) between create coefficient of thermal expansion differences, also can to the short side direction of the bottom surface of the few pedestal 1 of the impact of its stress, disperse equably in the mode that the central point O of the bottom surface around pedestal 1 rotates, and then, pedestal 1 intensity also can improve.
In addition, according to variation 3, terminal electrode 12,13 not only with the end on the long limit of the bottom surface with pedestal 1 close to or the state that connects, long side direction along the bottom surface of pedestal 1 is formed, and then also with the end of the minor face of the bottom surface with pedestal 1 close to or the state that connects, short side direction along the bottom surface of pedestal 1 is formed, so compared to variation 2, is more suitable for the intensity making stress dispersion and improve pedestal 1.
Next, in the figure 7, as variation 4, above-mentioned modified embodiment of the present embodiment is shown.
Variation 4 is compared to present embodiment, and the shape of each terminal electrode 12,13 in the bottom surface of pedestal 1 is different, and other parts have employed same structure.The following describes only the dissimilarity with present embodiment.
In variation 4, each terminal electrode 12,13 is divided to cede territory to form respectively.In addition, in castellation portion C1, C3, side terminal electrode 121,131 is defined.In this variation 4, terminal electrode 12,13 also becomes a pair relation, is mutually formed with symmetric shape.
Specifically, terminal electrode 12 has 2 electrodes, the electrode on the right side shown in Fig. 7 extends to castellation portion C5, the electrode in the left side shown in Fig. 7 extends to castellation portion C1, and the electrode pad 122(formed in the bottom surface of the inside of pedestal 1 via each side terminal electrode 121 is with reference to Fig. 2) stretch out and be electrically connected.Like this, 2 electrodes of terminal electrode 12 are electrically connected.In addition, in 2 electrodes of terminal electrode 12, the projection 12B with the shape similarly reduced respectively by 2 electrodes is defined.
In addition, terminal electrode 13 has 2 electrodes, the electrode in the left side shown in Fig. 7 extends to castellation portion C6, the electrode on the right side shown in Fig. 7 extends to castellation portion C3, and the electrode pad 132(formed in the bottom surface of the inside of pedestal 1 via each side terminal electrode 131 illustrates and omits) stretch out and be electrically connected.Like this, 2 electrodes of terminal electrode 13 are electrically connected.In addition, in 2 electrodes of terminal electrode 13, the projection 13B with the shape similarly reduced respectively by 2 electrodes is defined.
When joining the quartz crystal unit (pedestal 1) of this variation 4 to circuit substrate 4 by conductive bonding material D (with reference to Fig. 2), 2 electrodes of terminal electrode 12 are engaged to circuit substrate 4 by conductive bonding material D.Like this, the engaged conductive grafting material D across 2 electrodes of terminal electrode 12.Similarly, 2 electrodes of terminal electrode 13 are engaged to circuit substrate 4 by conductive bonding material D.Like this, the engaged conductive grafting material D across 2 electrodes of terminal electrode 13.
In the variation 4 shown in this Fig. 7, terminal electrode 12,13 has 2 electrodes respectively.Therefore, corresponding with the long limit size L2 of each terminal electrode 12,13 shown in Fig. 1 etc. size becomes long limit size L21, the L22 of each 2 electrodes being added each terminal electrode 12,13 and the size that obtains.In addition, similarly, corresponding with the long limit size L3 of projection 12B, 13B size becomes the long limit size L31, the L32 that are added each projection 12B, 13B and the size obtained.
In addition, in the variation 4 shown in Fig. 7, each terminal electrode 12,13 is divided into 2 electrodes respectively, but is not limited thereto, also can be divided into multiple.
In addition, also can as shown in Figure 8,1 electrode in 2 electrodes of the terminal electrode 12,13 of the variation 4 shown in Fig. 7 be made to become illusory (dummy) electrode.In the structure of the variation 5 shown in this Fig. 8, also can not form side terminal electrode 121,131 in castellation portion C1, C3.In this variation 6, terminal electrode 12,13 also becomes a pair relation, is mutually formed with symmetric shape.
When joining the quartz crystal unit (pedestal 1) of this variation 5 to circuit substrate 4 by conductive bonding material D (with reference to Fig. 2), also can join circuit substrate 4 by terminal electrode 12 with along the dummy electrode that long side direction and the terminal electrode 12 of pedestal 1 are formed adjacently to by conductive bonding material D.Under this engagement state, conductive bonding material D engages across terminal electrode 12 and dummy electrode.Similarly, also can by terminal electrode 13 and along pedestal 1 long side direction and join circuit substrate 4 with the dummy electrode that terminal electrode 13 is formed adjacently to by conductive bonding material D.Under this engagement state, conductive bonding material D engages across terminal electrode 13 and dummy electrode.
In the variation 5 shown in this Fig. 8, terminal electrode 12,13 has 2 electrodes respectively.Therefore, corresponding with the long limit size L2 of each terminal electrode 12,13 shown in Fig. 1 etc. size becomes long limit size L21, the L22 of each 2 electrodes being added each terminal electrode 12,13 and the size that obtains.In addition, similarly, corresponding with the long limit size L3 of projection 12B, 13B size becomes the long limit size L31, the L32 that are added each projection 12B, 13B and the size obtained.
In addition, the mode that each terminal electrode 12,13 is divided into 2 electrodes is respectively not limited to the variation 5 shown in Fig. 7, and also can be the variation 6 shown in Fig. 9.
In the variation 6 shown in Fig. 9, in each long limit of the subtend of pedestal 1, define 2 castellation portions C51, C52, C61, C62 in equally spaced position respectively.In addition, divided terminal electrode 12,13 extends independently respectively to these castellation portions C51, C52, C61, C62.In this variation 6, terminal electrode 12,13 also becomes a pair relation, is mutually formed with symmetric shape.
When joining the quartz crystal unit (pedestal 1) of this variation 6 to circuit substrate 4 by conductive bonding material D (with reference to Fig. 2)), 2 electrodes of terminal electrode 12 are engaged to circuit substrate 4 by conductive bonding material D.Like this, the engaged conductive grafting material D across 2 electrodes of terminal electrode 12.Similarly, 2 electrodes of terminal electrode 13 are engaged to circuit substrate 4 by conductive bonding material D.Like this, the engaged conductive grafting material D across 2 electrodes of terminal electrode 13.
In the variation 6 shown in this Fig. 9, terminal electrode 12,13 has 2 electrodes respectively.Therefore, corresponding with the long limit size L2 of each terminal electrode 12,13 shown in Fig. 1 etc. size becomes long limit size L21, the L22 of each 2 electrodes being added each terminal electrode 12,13 and the size that obtains.In addition, similarly, corresponding with the long limit size L3 of projection 12B, 13B size becomes the long limit size L31, the L32 that are added each projection 12B, 13B and the size obtained.
According to above-mentioned execution mode, variation 1 ~ 6, even if create coefficient of thermal expansion differences forming between the pedestal 1 of quartz crystal unit and circuit substrate 4, the impact of the stress deformation of the conductive bonding material D for engaged with base 1 and circuit substrate 4 also can be alleviated.Especially, terminal electrode 12,13 is formed with symmetric shape mutually, the long limit of terminal electrode 12,13 is close with the end, long limit of the bottom surface of pedestal 1 or formed with connecting, and the long limit of the long limit of terminal electrode 12,13 and the bottom surface of pedestal 1 configures side by side, to exceed the size of the half on the long limit of the bottom surface of pedestal 1, form the size on the long limit 12,13 of each terminal electrode.Therefore, no matter terminal electrode 12,13 is formed at which position on the long limit of the bottom surface of pedestal 1, terminal electrode 12,13 near the long limit central authorities of the bottom surface of pedestal 1 on the short side direction of the bottom surface of pedestal 1 region of subtend guaranteed, the engaging zones engaged by conductive bonding material D in this region is guaranteed.For this engaging zones, the impact of the stress deformation that the immediate vicinity from the peripheral end of the bottom surface of pedestal 1 towards the bottom surface of pedestal 1 produces can be alleviated, further, the generation of the stress deformation that the peripheral end from the immediate vicinity of the bottom surface of pedestal 1 towards the bottom surface of pedestal 1 can be suppressed to produce.
In addition, according to above-mentioned execution mode, variation 1 ~ 6, terminal electrode 12,13 is formed with symmetric shape mutually, the long limit of terminal electrode 12,13 is close with the end, long limit of the bottom surface of pedestal 1 or formed with connecting, and the long limit of the bottom surface of the long limit of terminal electrode and pedestal 1 configures side by side, to exceed the size of the half on the long limit of the bottom surface of pedestal 1, form the size on the long limit of each terminal electrode.Therefore, along the long side direction of the bottom surface of the large pedestal 1 of the impact of coefficient of thermal expansion differences, form the terminal electrode 12,13 be made up of the shape of long size of the half on the long limit of the bottom surface exceeding pedestal 1, so along long side direction one the ground coating electrically conductive grafting material D of the bottom surface of pedestal 1.Therefore, it is possible to suppress the generation of the stress deformation of the long side direction of pedestal 1, the impact of coefficient of thermal expansion differences to the short side direction of the bottom surface of pedestal 1 can be relaxed.Its result, can suppress the generation of crackle itself.And then, according to the present embodiment, a ground coating electrically conductive grafting material D continuously on terminal electrode 12,13 incessantly, so such as, compared to the mode of coating electrically conductive grafting material across 2 electrodes, can not crack the square end towards terminal electrode 12,13 in terminal electrode 12,13.Namely, the happening part of crackle can be made to become 1 position, even if just in case there occurs crackle, the crackle from multiple directions that also can not to occur with multiple position be starting point, can suppress terminal electrode 12,13 become open state from circuit substrate 4 and do not play function as electronic unit.
In addition, by stacked projection 12B, the 13B little compared to terminal electrode 12,13 area of plane and the forming as one respectively of the top at terminal electrode 12,13, stagger in the position of the position of crack growth near the end of the long side direction of the terminal electrode 12,13 that the crackle of conductive bonding material D can be made to occur at first and the crack growth of the immediate vicinity of long side direction.Want to be subject to the crackle that the basal surface position of terminal electrode 12,13 develops substantially in parallel the impact of the end of projection 12B, 13B of the end close to terminal electrode 12,13 at first and its angle be changed to not with the direction of terminal electrode 12,13 parallel circuit substrates 4.That is, on the way crackle bends.Like this, according to above-mentioned execution mode, variation 1 ~ 6, the bending point of crackle can be set.Owing to there is the bending point of this crackle, the development of crackle can be delayed.Especially, terminal electrode 12,13 and projection 12B, 13B are formed as mutually concentric and similar shape, and, the long limit of opposing terminal electrode 12,13 makes the size on the long limit of projection become more than 90%, thus the development angle of this crackle can be changed to arrange the bending point of crackle in the starting stage of crackle generation, and significantly suppress the development of crackle.As a result, the electricapparatus connectivity of terminal electrode 12,13 can be improved further, terminal electrode 12,13 can be suppressed simultaneously to become open state and do not play function as electronic unit.
In above-mentioned execution mode and variation 1 ~ 6, the structure that the end, long limit disclosing each long limit of terminal electrode 12,13 and the bottom surface of pedestal 1 is closely formed, but also can be formed with connecting with the end, long limit of the bottom surface of pedestal 1.Although with surface installing type quartz crystal unit for example, the electronic parts package of middle other surface installing types used such as the electronic equipment such as crystal filter, crystal oscillator can also be applied to.In addition, as the encapsulation (pedestal) of insulating properties, disclose ceramic material, but also can be glass material, crystal.As the metal film of terminal electrode, disclose metal level, but also can be plating material.
In addition, there is following situation: make the size on the long limit of each terminal electrode 12,13 different from above-mentioned execution mode and variation 1 ~ 6, and formed with the size below the half on the long limit of the bottom surface of pedestal 1, or near the long limit central authorities making terminal electrode 12,13 be formed at the bottom surface of pedestal 1 beyond position.In this case, be difficult to the region of guaranteeing subtend on the short side direction of the bottom surface of pedestal 1, and the impact of stress deformation as described above cannot be alleviated, and, also cannot suppress the generation of stress deformation.
In addition, the present invention can implement according to other various modes in the scope not departing from its spirit or main feature.Therefore, above-mentioned execution mode is only simple illustration, and is not limited thereto.Scope of the present invention is not limited to specification based on claims.And then, belong to the distortion in the equivalency range of claims, change is all within the scope of the present invention.
In addition, this application claims based on the priority on March 24th, 2010 in No. 2010-067467, the Japanese Patent Application of Japanese publication, and quote its full content at this.
Utilizability in industry
The present invention can be applied to the pedestal of the electronic parts packages such as quartz crystal unit, electronic parts package.
Claims (7)
1. a pedestal for electronic parts package, keeps electronic unit element, it is characterized in that,
The bottom surface of this pedestal is rectangle when overlooking, and only forms the terminal electrode of the rectangular shape that a pair uses conductive bonding material to engage with outside circuit substrate in described bottom surface,
Terminal electrode described in a pair is formed symmetrically by the collimated ray parallel with the long limit of described bottom surface of the central point of described bottom surface relatively,
The long limit of described each terminal electrode is close with the end on the long limit of described bottom surface or formed with connecting, and the long limit of described each terminal electrode and the long limit of described bottom surface configure side by side,
The size on the long limit of described each terminal electrode is above the size of the half on the long limit of described bottom surface.
2. the pedestal of electronic parts package according to claim 1, is characterized in that,
On the top of described terminal electrode, be stackedly integrally formed the area of plane projection less than described terminal electrode.
3. the pedestal of electronic parts package according to claim 1 and 2, is characterized in that,
The width dimensions of the gap area between described terminal electrode is identical with the width dimensions of the short side direction of described terminal electrode.
4. the pedestal of electronic parts package according to claim 1 and 2, is characterized in that,
Be more than 70% by the composition of proportions of the long limit size of the bottom surface of the relatively described pedestal of long limit size of described each terminal electrode.
5. the pedestal of electronic parts package according to claim 2, is characterized in that,
The width dimensions of the end of described each terminal electrode to the end of described each projection is configured to the scope being in 0.01 ~ 0.5mm.
6. an electronic parts package, keeps electronic unit element, it is characterized in that,
There is the pedestal of the electronic parts package described in claim 1 or 2 and described electronic unit element is carried out to the lid of gas-tight seal.
7. electronic parts package according to claim 6, is characterized in that,
Described terminal electrode has multiple electrode,
Described electronic parts package uses multiple electrode of described terminal electrode and joins outside circuit substrate to by conductive bonding material.
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JP2010-067467 | 2010-03-24 | ||
JP2010067467 | 2010-03-24 | ||
PCT/JP2011/055738 WO2011118415A1 (en) | 2010-03-24 | 2011-03-11 | Electronic component packaging base and electronic component packaging |
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JP5806547B2 (en) * | 2011-08-05 | 2015-11-10 | 日本電波工業株式会社 | Piezoelectric device and method for manufacturing piezoelectric device |
JP6056259B2 (en) * | 2012-08-18 | 2017-01-11 | セイコーエプソン株式会社 | Electronic component manufacturing method, electronic device manufacturing method |
JP6167494B2 (en) * | 2012-09-26 | 2017-07-26 | セイコーエプソン株式会社 | Electronic device container manufacturing method, electronic device manufacturing method, electronic device, electronic apparatus, and mobile device |
JP6294020B2 (en) * | 2013-07-16 | 2018-03-14 | セイコーインスツル株式会社 | Lid, electronic device package and electronic device using the lid |
JP2015056501A (en) * | 2013-09-11 | 2015-03-23 | セイコーエプソン株式会社 | Circuit board, method of manufacturing circuit board, electronic device, electronic apparatus, and moving body |
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2011
- 2011-03-11 US US13/392,540 patent/US8836095B2/en active Active
- 2011-03-11 CN CN201180005694.2A patent/CN102714187B/en active Active
- 2011-03-11 WO PCT/JP2011/055738 patent/WO2011118415A1/en active Application Filing
- 2011-03-11 JP JP2012506938A patent/JP5757287B2/en active Active
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Also Published As
Publication number | Publication date |
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US20120152585A1 (en) | 2012-06-21 |
CN102714187A (en) | 2012-10-03 |
JP5757287B2 (en) | 2015-07-29 |
US8836095B2 (en) | 2014-09-16 |
WO2011118415A1 (en) | 2011-09-29 |
JPWO2011118415A1 (en) | 2013-07-04 |
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