CN102714151A - Adhesive sheet for semiconductor wafer processing - Google Patents

Adhesive sheet for semiconductor wafer processing Download PDF

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Publication number
CN102714151A
CN102714151A CN2011800058308A CN201180005830A CN102714151A CN 102714151 A CN102714151 A CN 102714151A CN 2011800058308 A CN2011800058308 A CN 2011800058308A CN 201180005830 A CN201180005830 A CN 201180005830A CN 102714151 A CN102714151 A CN 102714151A
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China
Prior art keywords
semiconductor wafer
processing
adhesive sheet
mass parts
radiation
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Pending
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CN2011800058308A
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Chinese (zh)
Inventor
矢吹朗
矢野正三
玉川有理
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Priority claimed from JP2010084447A external-priority patent/JP2011216734A/en
Priority claimed from JP2010084531A external-priority patent/JP2011213922A/en
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of CN102714151A publication Critical patent/CN102714151A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate

Abstract

Even when using a device that bonds a dicing sheet directly to the underside of a wafer, the disclosed adhesive sheet for semiconductor wafer processing can be easily peeled off after a dicing step is finished and can drastically reduce the adherence of contaminants. Said adhesive sheet comprises a radiotransparent resin base film and an adhesive layer formed on top of said resin base film. The adhesive layer may use a radiation-curable resin composition (I) that contains between 0.1 and 10 mass parts of a photopolymerization initiator (b), with a weight-average molecular weight less than 1,000 as measured by gel permeation chromatography calculated with polystyrene as the reference substance, per 100 mass parts of a base resin consisting primarily of a polymer (a) in which a residue, which has a (meth)acryl monomer part with a group containing a radiation-curable carbon-carbon double bond, is bonded to the main-chain repeating unit. Alternatively, the adhesive layer may use a radiation-curable resin composition (II) that contains, per 100 mass parts of a base resin: between 1 and 300 mass parts of a compound that has a weight-average molecular weight of at most 10,000, with each molecule having at least two photopolymerizable carbon-carbon double bonds; and between 0.1 and 10 mass parts of a photopolymerization initiator with a weight-average molecular weight less than 1,000 as measured by gel permeation chromatography calculated with polystyrene as the reference substance.

Description

The semiconductor wafer adhesive sheet for processing
[technical field]
Used semiconductor wafer adhesive sheet for processing when the present invention relates to the thin semiconductor wafer process with radiation-curing type adhesive phase.
[background technology]
All the time, semiconductor integrated circuit is through utilizing cement that the semiconductor chip that on chip carrier, is formed with the particular electrical circuit pattern is fixedly made.This moment, employed semiconductor chip for example can be through following method manufacturing.
(1) the high purity silicon monocrystalline is cut processes semiconductor wafer, form specific circuit patterns such as IC afterwards in this wafer surface.
The surface protection band of (2) fitting the semiconductor wafer circuit face is protected; Formed circuit face is protected, utilized milling drum that this chip back surface is carried out grinding afterwards, make the thickness attenuation of wafer; Until being about 100 μ m～600 μ m, thereafter the surface protection band is peeled off from circuit face.
(3) cutting blade is conformed to the cutting frame of ring-type, the chip back surface that utilizes above-mentioned milling drum to carry out grinding is conformed to the adhesive phase that the hollow space at this frame exposes with the hollow space that is a bit larger tham the semiconductor wafer diameter.
(4) opposition side (promptly having formed a side of circuit) from the one side that is fitted with cutting blade cuts; Process semiconductor chip; The irradiation ultraviolet radiation isoradial reduces the bonding force of cutting blade adhesive phase, utilizes thimble with the base material film side jack-up of this chip from cutting blade, thereby picks up.
For the cutting blade that uses in this operation; The bonding force that need have the degree that in cutting processing, can not peel off; In addition; During picking up after cutting, need can with the low bonding force of the degree of stripping semiconductor chip easily by cutting blade peel off, chip back can not adhere to the adhesive is the polluter of representative.
On the other hand, in recent years, obtaining thickness by the heavy caliber wafer of diameter 300mm is that thin semiconductor chip below the 100 μ m becomes main flow.Therefore, how to obtain semiconductor chip no problemly become important topic by this slim wafer.
As one of solution, manufacturing installation is arranged in the so-called line till motion has proposed in continuous apparatus, to carry out above-mentioned (1)～(3) or carry out (for example, referring to the patent documentations 1,2) such as manufacturing approaches that (2) reach the operation of (3) rapidly to this.In the manufacturing installation, the chip back surface grinding process that carries out (2) continuously reaches (3) operation to chip back surface applying cutting blade in for example online.Therefore, in the online interior manufacturing installation, can reduce the breakage of semiconductor wafer or semiconductor chip.In this device,, the oxide film thereon of chip back surface carries out the applying of cutting blade before generating.
But; In having the cutting blade of existing adhesive phase; After chip back surface has generated oxide film thereon, fit, thereby can produce following problems:, but can't successfully peel off when likewise being used in the line manufacturing installation even can peel off smoothly in this case.
In addition; In existing manufacturing process; Be the applying of after chip back surface produces oxide film thereon, carrying out cutting blade, even thereby the cutting blade with existing adhesive phase that can peel off smoothly under this situation likewise is used for manufacturing installation in the line, also can produce the problem that can't peel off smoothly.
In addition,, the motion of so-called diced chip joint fastener has been proposed as one of other solution, wherein, will be on chip carrier fixedly during semiconductor chip used cement be shaped to membranaceous, with this membranoid substance in advance lamination on the adhesive phase of cutting belt.When using this diced chip joint fastener, likewise be fitted in chip back surface with common cutting blade, the cement layer also is cut with adhesive phase.Because be fitted with the cement layer on this sheet, thereby the increase of band integral intensity, sheet self has the effect that strengthens slim die strength.Therefore can carry out the cutting of slim wafer smoothly.But, finish back cement layer in cutting and remain in the semiconductor chip back side, must carry out peeling off between cement layer and adhesive phase.Therefore, as adhesive phase, use the sheet material that has adopted specific radiation-curing type material.Recently, the radiation exposure amount that is improving behind the cutting action improves the speed of semiconductor chip manufacturing process.When but the radiation exposure amount increased, thermal discharge increased, thereby produced the problem of peeling off that is difficult to carry out cement layer and adhesive phase by the heat that is produced in the radiation exposure operation behind the cutting action.
[prior art document]
[patent documentation]
Patent documentation 1: TOHKEMY 2002-343756 communique
Patent documentation 2: TOHKEMY 2004-40114 communique
[summary of the invention]
[inventing problem to be solved]
Problem of the present invention is to provide a kind of semiconductor wafer adhesive sheet for processing; Even this semiconductor wafer adhesive sheet for processing directly is fitted with in the device of cutting blade at chip back surface; Also can after cutting action finishes, easily peel off, and can reduce adhering to of polluter.
In addition; Problem of the present invention is to provide a kind of semiconductor wafer adhesive sheet for processing; It is utilized in the semiconductor wafer adhesive sheet for processing that further is provided with the cement layer on the adhesive phase; Cement layer and adhesive phase are peeled off in picking up operation easily, can be obtained having the semiconductor chip of cement layer thus.
[being used to solve the means of problem]
The inventor furthers investigate for above-mentioned problem; The result finds; Use one of any in the following semiconductor wafer adhesive sheet for processing can solve above-mentioned problem respectively: (I) through using the radiation-curable resin combination on the substrate resin film, to form the semiconductor wafer adhesive sheet for processing of adhesive phase, it is the base resin of principal component and the Photoepolymerizationinitiater initiater of specified molecular weight that this radiation-curable resin combination contains with specific radiation-curable acrylic acid series polymeric compounds; Or, (II) formed the semiconductor wafer adhesive sheet for processing of radioactive ray polymerism adhesive phase of the resin combination of the Photoepolymerizationinitiater initiater that in acrylic acid series polymeric compounds, contains radioactive ray polymerizable compound and specified molecular weight.The present invention is based on this opinion and accomplish.
That is, the present invention provides:
< 1>a kind of semiconductor wafer adhesive sheet for processing, this semiconductor wafer adhesive sheet for processing are formed with the substrate resin film of radioactive ray permeability and the adhesive phase on this substrate resin film, and said semiconductor wafer adhesive sheet for processing is characterised in that:
This adhesive phase is made up of the layer that has used the radiation-curable resin combination, in said radiation-curable resin combination, with respect to (i-1) base resin 100 mass parts, contains (iii) Photoepolymerizationinitiater initiater (b) 0.1 mass parts～10 mass parts,
Said (i-1) base resin is to be the base resin of principal component with acrylic acid series polymeric compounds (a); In this acrylic acid series polymeric compounds (a); The residue that has combined to have (methyl) acrylic monomer part for the repetitive of main chain; Said (methyl) acrylic monomer partly has the group that comprises the radiation-curable carbon-to-carbon double bond
The weight average molecular weight that by the gel permeation chromatography that is called as GPC and with the polystyrene is the said Photoepolymerizationinitiater initiater (b) (iii) that converts of standard substance is less than 1000;
< 2>a kind of semiconductor wafer adhesive sheet for processing, this semiconductor wafer adhesive sheet for processing are formed with the substrate resin film of radioactive ray permeability and the adhesive phase on this substrate resin film, and said semiconductor wafer adhesive sheet for processing is characterised in that:
This adhesive phase is made up of the layer that has used the radiation-curable resin combination; In said radiation-curable resin combination; With respect to (i-2) acrylic acid series polymeric compounds 100 mass parts; Contain (ii) compound (c) 1 mass parts～300 mass parts and (iii) Photoepolymerizationinitiater initiater (b) 0.1 mass parts～10 mass parts
Said compound (c) (ii) has 2 optical polymerism carbon-to-carbon double bonds at least in molecule, and its weight average molecular weight is below 10,000,
What measured by gel permeation chromatography (hereinafter referred to as " GPC ") method is that the weight average molecular weight of the said Photoepolymerizationinitiater initiater (b) (iii) that converts of standard substance is less than 1000 with the polystyrene;
< 3>like < 1>or < 2>described semiconductor wafer adhesive sheet for processing; It is characterized in that; Above-mentioned Photoepolymerizationinitiater initiater (b) is for being selected from by 1-hydroxyl-cyclohexyl phenyl-ketone, 2; 2-dimethoxy-1, at least a in the group that oligomer shown in 2-diphenylethane-1-ketone, 2-methyl isophthalic acid-(4-methyl mercapto phenyl)-2-morpholinyl-1-acetone and the formula (1) is formed
Figure BDA00001874855600041
General formula (1)
(in the formula, R representes alkyl.N is an integer.)；
Like < 3>described semiconductor wafer adhesive sheet for processing, it is characterized in that < 4>degree of polymerization of the oligomer shown in the above-mentioned general formula (1) is n=2～4;
< 5>like < 1 >, < 3>or < 4>described semiconductor wafer adhesive sheet for processing; It is characterized in that; The iodine value of above-mentioned polymer (a) is 1～50, and this polymer (a) contains acrylic monomer as construction unit, in said acrylic monomer; For the repetitive of main chain, has the group that contains radioactive ray polymerism carbon-to-carbon double bond; And
< 6>a kind of semiconductor wafer adhesive sheet for processing is characterized in that, on the adhesive phase of each described semiconductor wafer adhesive sheet for processing of < 1 >～< 5 >, further is provided with the cement layer.
[invention effect]
Utilize semiconductor wafer adhesive sheet for processing of the present invention,, also can after cutting action finishes, easily peel off, and can significantly reduce adhering to of polluter even be used for when chip back surface directly is fitted with the device of cutting blade.
In addition, utilize the semiconductor wafer adhesive sheet for processing that on adhesive phase, further is provided with the cement layer of the present invention, cement layer and adhesive phase are easily peeled off in picking up operation, can access the semiconductor chip that has the cement layer.
Above-mentioned and other characteristic of the present invention and advantage can be suitably with reference to appended accompanying drawing according to following record and more clear and definite.
[description of drawings]
Fig. 1 illustrates the sectional view of wafer process of the present invention with an execution mode of bonding sheet.
Fig. 2 illustrates the sectional view of wafer process of the present invention with another execution mode of bonding sheet.
[embodiment]
With reference to accompanying drawing preferred semiconductor wafer adhesive sheet for processing of the present invention is described.
Fig. 1 is the schematic sectional view that a preferred implementation of semiconductor wafer adhesive sheet for processing of the present invention is shown, and it has substrate resin film 1 and on substrate resin film 1, forms adhesive phase 2.In addition, Fig. 2 is the schematic sectional view that another preferred implementation of semiconductor wafer adhesive sheet for processing of the present invention is shown.Among Fig. 2, have substrate resin film 1, and on substrate resin film 1, be formed with adhesive phase 2, further be formed with cement layer 3.
Adhesive phase among the present invention is made up of the radiation-curable resin combination, and this radiation-curable resin combination contains the radioactive ray polymerizable compound of specific blend amount and contains specific Photoepolymerizationinitiater initiater with the specific blend amount simultaneously in base resin.Use semiconductor wafer adhesive sheet for processing of the present invention, after cutting processing finishes, from after the radioactive ray permeability substrate resin film side irradiation radioactive ray stated, thereby the bonding force of adhesive phase is reduced.Can carry out picking up of semiconductor chip thus no problemly.As shown in Figure 2, for the semiconductor wafer adhesive sheet for processing that on adhesive phase, is formed with the cement layer, likewise, from after the radioactive ray permeability substrate resin film side irradiation radioactive ray stated, the bonding force of adhesive phase is reduced.In this case,, can obtain having the semiconductor chip of cement layer, can remain under this state and be fixed on the chip carrier through peeling off at the interface of cement layer and adhesive phase.
For semiconductor wafer adhesive sheet for processing of the present invention shown in Figure 1; Even grinding fits in it under situation at this back side rapidly after finishing at the back side of semiconductor wafer, also can picking up in the operation behind radiation exposure peel off no problemly.Soon semiconductor wafer surface formed natural oxide film at whole after grinding finished, but had the not active face of the active atomic of the state of oxidation.Even in this case, semiconductor wafer adhesive sheet for processing of the present invention also can be peeled off behind radiation exposure no problemly, can significantly reduce adhering to of the pollutant that derives from adhesive ingredients.
In addition; For the semiconductor wafer adhesive sheet for processing of the present invention that on adhesive phase, further is provided with the cement layer shown in Figure 2, can not have problems peeling off of adhesive phase and cement layer owing to the heat that radiation exposure produced after the cutting action end.
Semiconductor wafer of the present invention processing is with in the sheet, for adhesive phase, after form on the substrate resin film stated the resin combination that used radiation-curable layer.Semiconductor wafer processing of the present invention comprises first mode and second mode with sheet.In modes, comprise that sheet is used in the semiconductor wafer processing of mode shown in Figure 1 and mode shown in Figure 2.It is (i-1) that the base resin of the adhesive phase of sheet is used in the semiconductor wafer processing of first mode; It is to be the base resin of principal component with acrylic acid series polymeric compounds (a); In this acrylic acid series polymeric compounds (a); For the residue that the repetitive of main chain has combined to have (methyl) acrylic monomer part, said (methyl) acrylic monomer partly has the group that comprises the radiation-curable carbon-to-carbon double bond.
(the semiconductor wafer processing of first mode is with the base resin of the adhesive phase of sheet)
The base resin of used radiation-curable resin combination is a principal component with polymer (a) in the adhesive phase of semiconductor wafer processing with sheet of first mode; In this polymer (a); For the residue that the repetitive of main chain has combined to have (methyl) acrylic monomer part, said (methyl) acrylic monomer partly has the group that comprises the radiation-curable carbon-to-carbon double bond.Among the present invention, so-called with polymer (a) be principal component be meant in base resin to contain proportional be 50 quality %～100 quality %.In addition, in the present invention, (methyl) acrylic monomer comprise acrylic monomer and metha crylic monomer the two.
Above-mentioned polymer (a) can be made by any-mode.For example; As above-mentioned polymer (a), can enumerate acrylic acid series copolymer and/or methacrylic acid based copolymer (a1) that the repetitive that makes for main chain has the radiation-curable carbon-to-carbon double bond and have a functional group and have the polymer that can react with the compound (a2) of the functional group of this functional group reactions and obtain.And; Also can make acrylic acid series copolymer with functional group and/or methacrylic acid based copolymer for (a1 '), make and have the radiation-curable carbon-to-carbon double bond and have simultaneously and can be (a2 ') with the compound of the functional group of the functional group reactions of (a1 '), make polymer (a) through they are reacted.
Acrylic acid series copolymer and/or the methacrylic acid based copolymer (a1) that the above-mentioned repetitive for main chain has the radiation-curable carbon-to-carbon double bond and has a functional group for example can obtain through making monomers (a1-1) such as alkyl acrylate with radiation-curable carbon-to-carbon double bond and/or alkyl methacrylate carry out copolymerization with the monomer (a1-2) with functional group.
As monomer (a1-1), can enumerate the carbon number of the alkyl of Arrcostab for example and be (methyl) alkyl acrylate (for example Hexyl 2-propenoate, acrylic acid n-octyl, Isooctyl acrylate monomer, acrylic acid-2-ethyl caproite, dodecylacrylate, decyl acrylate) of 6～12.In addition, the carbon number that can enumerate the alkyl of Arrcostab is (methyl) alkyl acrylate (for example acrylic acid pentyl ester, n-butyl acrylate, isobutyl acrylate, ethyl acrylate, methyl acrylate or with their same methacrylates etc.) below 5.
As monomer (a1-1), if use big more (methyl) alkyl acrylate of carbon number of the alkyl of Arrcostab, then glass transition point has the tendency of reduction more.Thereby the carbon number of the alkyl of the Arrcostab through suitable selection monomer (a1-1) can obtain having the polymer (a) of desired glass transition point.
And, except that glass transition point,, can also in (a1-1), add the low molecular compound that vinyl acetate, styrene, acrylonitrile etc. have carbon-to-carbon double bond and obtain polymer (a) from improving and the compatibility of other composition or the purpose of various performances.The combined amount of these low molecular compounds is preferably below the 5 quality % of monomer (a1-1).
As the functional group that monomer (a1-2) is had, can enumerate carboxyl, hydroxyl, amino, cyclic acid anhydride base, epoxy radicals, NCO etc.As the concrete example of monomer (a1-2), for example can enumerate out: the part of the NCO of acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2-hydroxy alkyl acrylate class, 2-hydroxy alkyl methacrylate class, glycol mono acrylic ester class, glycol monomethacrylates class, N hydroxymethyl acrylamide, N-methylol methacrylamide, allyl alcohol, N-alkyl amino ethyl acrylate class, N-alkyl amino EMA class, acrylic amide, methacryl amine, maleic anhydride, itaconic anhydride, fumaric acid anhydride, phthalic anhydride, glycidyl acrylate, methyl propenoic acid glycidyl base ester, allyl glycidyl ether, polyisocyanate compound has been carried out monomer that the urea alkanisation forms etc. with the monomer with hydroxyl or carboxyl and radiation-curable carbon-to-carbon double bond.
The functional group of above-mentioned (a2) is under the situation of carboxyl or cyclic acid anhydride base, as the functional group that (a1) had, can enumerate for example hydroxyl, epoxy radicals, NCO etc.In addition, be under the situation of hydroxyl in the functional group of (a2), as the functional group that (a1) had, can enumerate for example cyclic acid anhydride base, NCO etc.(a2) functional group is that the functional group as (a1) had can enumerate epoxy radicals, NCO etc. under the situation of amino.(a2) functional group is under the situation of epoxy radicals, as the functional group that (a1) had, can enumerate for example carboxyl, cyclic acid anhydride base, amino etc.
As concrete example, can enumerate out the identical example of enumerating in the concrete example with monomer (a1-2) of example.
(a1) with (a2) reaction in, residual through unreacted functional group can suitably be set at acid number or hydroxyl value etc. in the scope of stating after preferred.
Comprising (methyl) acrylic monomer with the group that contains the radiation-curable carbon-to-carbon double bond can obtain through in all kinds of solvents, carrying out polymerisation in solution as the polymer (a) of construction unit for the repetitive of main chain.As the organic solvent under the situation of carrying out polymerisation in solution, can use the solvent of ketone system, ester system, alcohol system, fragrant family.Usually preferably be used for the good solvent of acrylic acid series polymeric compounds and the solvent that boiling point is 60～120 ℃.For example, can use toluene, ethyl acetate, isopropyl alcohol, benzene, methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone etc.As polymerization initiator, can use α, α '-azos two such as azo diisobutyl nitrile are; The radical initiator of organic peroxide systems such as benzoyl peroxide etc.At this moment, catalysts, polymerization inhibitor as required through polymerization temperature and polymerization time are regulated, thereby can obtain the polymer (a) of desired molecular weight.And,, preferably use mercaptan, carbon tetrachloride series solvent about the adjusting of molecular weight.Need to prove that polymer (a) synthetic is not limited to polymerisation in solution, also can use other methods such as polymerisation in bulk, suspension polymerisation.
Among the present invention, the weight average molecular weight of polymer (a) that has combined to comprise the residue of (methyl) acrylic monomer part with the group that contains the radiation-curable carbon-to-carbon double bond for the repetitive of main chain is preferably about 300,000～1,000,000.If less than 300,000, the cohesive force that is caused by radiation exposure is reduced, when wafer is cut, be easy to generate the skew of element, the image recognition difficulty.In order to prevent the skew of this element as possible, molecular weight is preferably more than 400,000.In addition, molecular weight is if surpass 1,000,000, then when synthetic, gelation might take place when being coated with.For the weight average molecular weight of polymer among the present invention (a), for example can utilize following method to obtain with the weight average molecular weight form of polystyrene conversion.
(condition determination of weight average molecular weight)
GPC device: HLC-8120GPC (trade name, Dong Caoshe makes)
Post: TSK gel SuperHM-H/H4000/H3000/H2000, (trade name, Dong Caoshe makes)
Flow: 0.6ml/min,
Concentration: 0.3 quality %,
Injection rate: 20 μ l,
Column temperature: 40 ℃
Launch solvent: chloroform
Among the present invention, comprise acrylic monomer for main chain and be preferably 1～50 as the iodine value of the polymer (a) of construction unit with the group that contains radioactive ray polymerism carbon-to-carbon double bond.This iodine value further is preferably 2～30, if be less than 1, then the degree of cross linking behind the radiation exposure is less, and the reduction of peeling force is incomplete, can't fully carry out picking up of chip.If surpass 50, then the degree of cross linking behind the radiation exposure is more, cure shrinkage takes place, the picking up property reduction of chip.
The hydroxyl value of above-mentioned polymer (a) is under 5～100 the situation, and the bonding force behind the radiation exposure reduces, and leaks the danger of picking up (ピ ッ Network ア ッ プ ミ ス) thereby can further reduce, thereby preferred.In addition, the acid number of polymer (a) is preferably 0.5～30.
Hydroxyl value here and acid number refer to according to JIS K 0070 and measure the value that obtains.Through the hydroxyl value that makes polymer (a) is in the suitable scope, thereby the flowability of the adhesive phase behind the radiation exposure is in the suitable scope, can fully reduce the bonding force behind the radiation exposure.Be in the suitable scope through the acid number that makes polymer (a), the flowability of the adhesive phase behind the radiation exposure is in the suitable scope, adhesive tape post-equalization property is met.
In the radiation-curable resin combination that constitutes adhesive phase of the present invention, in the employed base resin, existing material can in the scope of aim of the present invention, cooperated.For example, can use rubber based polymers such as natural rubber, various synthetic rubber; Perhaps gather (methyl) alkyl acrylate, (methyl) alkyl acrylate, (methyl) alkyl acrylate with can with the acrylic acid series copolymers such as copolymer of other unsaturated monomer of its copolymerization.
(the semiconductor wafer processing of second mode is with the base resin of the adhesive phase of sheet)
The semiconductor wafer processing of second mode uses the base resin of radiation-curable resin combination used in the adhesive phase of sheet to be acrylic acid series polymeric compounds.
As acrylic acid series polymeric compounds, can enumerate: with (methyl) acrylic acid ester composition is monomer principal component (the quality % in the polymer is greater than 50%), makes this (methyl) acrylic acid ester composition and monomer component that can copolymerization carry out copolymerization and the polymer that obtains etc.
In the acrylic acid series polymeric compounds; For (methyl) acrylic acid ester composition, for example can enumerate: (methyl) alkyl acrylates such as (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) butyl acrylate, (methyl) isobutyl acrylate, (methyl) sec-butyl acrylate, (methyl) tert-butyl acrylate, (methyl) acrylic acid pentyl ester, (methyl) Hexyl 2-propenoate, (methyl) acrylic acid heptyl ester, (methyl) acryllic acid monooctyl ester, (methyl) Isooctyl acrylate monomer, (methyl) 2-EHA, (methyl) acrylic acid ester in the ninth of the ten Heavenly Stems, (methyl) acrylic acid ester in the different ninth of the ten Heavenly Stems, (methyl) decyl acrylate, (methyl) isodecyl acrylate, (methyl) acrylic acid undecyl ester, (methyl) dodecylacrylate, (methyl) tridecyl acrylate, (methyl) acrylic acid tetradecane ester, (methyl) acrylic acid pentadecane ester, (methyl) acrylic acid cetyl ester, (methyl) acrylic acid heptadecyl ester, (methyl) acrylic acid stearyl as the monomer principal component; (methyl) acrylic acid cycloalkyl esters such as (methyl) cyclohexyl acrylate; (methyl) phenyl acrylate etc. (methyl) acrylic acid aryl ester etc.(methyl) acrylic acid ester can use separately or combination use more than 2 kinds.
(curing agent)
In the radiation-curable resin combination of the adhesive phase of the semiconductor wafer adhesive sheet for processing that constitutes above-mentioned first mode and second mode, can contain employed all the time curing agent such as polyisocyanate compound, alkyl etherificate melamine compound, epoxy based compound, silane coupling agent.Through processing the resin combination that is combined with curing agent, can the initial stage bonding force be set at arbitrary value.In curing agent, preferably use the isocyanate-based curing agent.
As the isocyanate-based curing agent, specifically, use the multicomponent isocyanate compound; 2,4 toluene diisocyanate, 2 for example, 6-toluene di-isocyanate(TDI), 1; 3-XDI, 1; 4-XDI, diphenyl methane-4,4 '-vulcabond, diphenyl methane-2,4 '-vulcabond, 3-MDPM vulcabond, hexamethylene diisocyanate, IPDI, dicyclohexyl methyl hydride-4; 4 '-vulcabond, dicyclohexyl methyl hydride-2,4 '-vulcabond, lysine isocyanates etc.
(weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least is the compound below 10,000)
It is the compound (c) below 10,000 that the processing of the semiconductor wafer of second mode uses in the adhesive phase of sheet used radiation-curable resin combination to contain the weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least.For this compound (c), as long as, just can especially restrictedly not use for the compound that is three-dimensional nettedization takes place to solidify the irradiation through radioactive ray.It is the oligomer below 10,000 that this compound contains weight average molecular weight, does not contain weight average molecular weight greater than 10,0000 high molecular polymer.Preferred molecular weight be below 5,000 and the carbon-to-carbon double bond number of intramolecular radioactive ray polymerism be 2～6 so that three-dimensional nettedization of the adhesive phase that causes by the irradiation of radioactive ray carry out effectively.
Need to prove that the weight average molecular weight that in molecule, has the low molecular weight compound of 2 optical polymerism carbon-to-carbon double bonds at least among the present invention refers to the GPC (gel permeation chromatography) that utilizes under the following condition and the polystyrene conversion weight average molecular weight that determines.
(condition determination of weight average molecular weight)
GPC device: HLC-8120GPC (trade name, Dong Caoshe makes)
Post: TSK-GEL G2500HHR (trade name, Dong Caoshe makes)
Flow: 1ml/min
Concentration: 0.2mg/ml
Injection rate: 100 μ l,
Thermostat temperature: 40 ℃
Mobile phase: chloroform
As radioactive ray polymerizable compound (c); Can enumerate for example trimethylolpropane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, tetramethylol methane tetraacrylate, dipentaerythritol monohydroxy five acrylic acid ester, dipentaerythritol acrylate, 1; 4-butanediol diacrylate, 1,6-hexanediyl ester, polyethyleneglycol diacrylate, organopolysiloxane composition, commercially available oligoester acrylic acid ester, urea alkane acrylic acid ester etc.
It is a kind of that the weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least is that the compound below 10,000 can use separately, also can two or morely share.With respect to base resin 100 mass parts, combined amount is 1 mass parts～300 mass parts.Preferably, with respect to base resin 100 mass parts, combined amount is 30 mass parts～200 mass parts, further is preferably 50 mass parts～150 mass parts.If this amount is very few, and then three-dimensional nettedization that is caused by radiation exposure of adhesive phase is insufficient, and the semiconductor wafer adhesive sheet for processing is difficult for stripping down from wafer, and wafer may be contaminated.If this amount is then excessively carried out based on the polymerization reaction of radioactive ray too much, can produce the cure shrinkage due to the irradiation of radioactive ray.Its result, adhesive phase is followed by the surface of fitting body and is absorbed in wherein, during the picking up of the semiconductor chip after cutting, is difficult to pick up.And if the amount of radioactive ray polymerizable compound then is difficult to keep the shape of adhesive phase too much, has problems such as thickness and precision variation.
(Photoepolymerizationinitiater initiater)
Constitute in the radiation-curable resin combination of adhesive phase of semiconductor wafer adhesive sheet for processing of first mode and second mode, use by gel permeation chromatography (hereinafter referred to as " GPC ") method and convert the weight average molecular weight that obtains less than 1000 Photoepolymerizationinitiater initiater as standard substance with polystyrene.Among the present invention, the weight average molecular weight of Photoepolymerizationinitiater initiater refers to that the GPC that utilizes following condition measures and the value that obtains.
(condition determination of weight average molecular weight)
GPC device: the system LCVP of Shimadzu Seisakusho Ltd. series
Post: OligoPore 300 * 7.5 (trade name) (trade name, PolymerLaboratories makes)
Flow: 1ml/min,
Concentration: 1mg/ml,
Injection rate: 50 μ l,
Column temperature: 40 ℃
Launch solvent: chloroform
For Photoepolymerizationinitiater initiater, can produce free radical through irradiates light or ultraviolet isoradial.What contained in the adhesive phase thus, comprises acrylic monomer with the group that contains radioactive ray polymerism carbon-to-carbon double bond for main chain and obtains promoting as the curing reaction of the polymer (a) of construction unit; The weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least that is perhaps contained in the adhesive phase is that the curing reaction of the compound below 10,000 obtains promoting.Photoepolymerizationinitiater initiater through polystyrene conversion based on the weight average molecular weight of GPC if excessive, then the breaking up of the branch of Photoepolymerizationinitiater initiater has problems in the adhesive phase, the free radical that is produced is difficult to move rapidly, can't carry out effective curing reaction.In this case, need the radioactive ray of the necessary above high illumination of irradiation, because heat release is difficult to reduce effectively adhesive phase and by the adaptation of fitting body.
If describe with reference to the phenomenon of accompanying drawing for this situation, then as shown in Figure 1, under the situation of the semiconductor wafer adhesive sheet for processing 10 that is formed with adhesive phase 2 on the substrate resin film 1, aspect the picking up of semiconductor chip, produce obstacle.And as shown in Figure 2, for substrate resin film 1 is provided with adhesive phase 2, further is formed with under the situation of semiconductor wafer adhesive sheet for processing 20 of cement layer 3, be difficult to carry out smoothly peeling off of cement layer 3 and adhesive phase 2.
Photoepolymerizationinitiater initiater utilizes the upper limit of the weight average molecular weight of trying to achieve based on GPC of polystyrene conversion to be preferably 800, further to be preferably 600.
Utilize the not special restriction of lower limit of the weight average molecular weight of trying to achieve based on GPC of polystyrene conversion about Photoepolymerizationinitiater initiater, but be preferably more than 200.If molecular weight is little, then be easy to distillation, become significantly to the mobile of non-fitting body layer from adhesive phase, thereby pollute wafer easily.And the thermal endurance variation of adhesive phase becomes in the drying process after the base material coating during fabrication and decomposes easily.Therefore do not demonstrate stable curing reaction sometimes.
As Photoepolymerizationinitiater initiater; For example can enumerate: benzophenone, 4; Two (diethylamino) benzophenone, 2 of 4-; 4; 6-tri-methyl benzophenone (ベ Application ゾ Off ェ Application), 4-phenyl benzophenone, tert-butyl group anthraquinone, 2-EAQ, diethoxy acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-ketone, 2; 2-dimethoxy-1; 2-diphenylethane-1-ketone, 1-hydroxy-cyclohexyl-phenyl ketone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-2-morpholinyl-1-acetone, 2-benzyl-2-dimethylamino-1-(4-morpholino phenyl)-butanone-1, diethyl thioxanthone, isopropyl thioxanthone, 2,4,6-trimethylbenzoyl diphenyl phosphine oxide, two (2; 4,6-trimethylbenzoyl)-oligomer shown in the phenyl phosphine oxide, 2-hydroxyl-1-{ 4-[4-(2-hydroxy-2-methyl propiono) benzyl] phenyl }-2-methylpropane-1-ketone, 2-(dimethylamino)-2-[(4-aminomethyl phenyl) methyl]-1-[4-(4-morpholinyl) phenyl]-1-butanone, formula (1).
Figure BDA00001874855600131
General formula (1)
(in the formula, R representes alkyl.N is an integer.)
In the above-mentioned Photoepolymerizationinitiater initiater; As being difficult for distillation, being difficult for the Photoepolymerizationinitiater initiater that the excellence of remnant is polluted in generation; Can enumerate 2; 2-dimethoxy-1,2-diphenylethane-1-ketone (molecular weight 260), 2-methyl isophthalic acid-(4-methyl mercapto phenyl)-2-morpholinyl-1-acetone (molecular weight 280), 1-hydroxyl-cyclohexyl phenyl-ketone (molecular weight 205).
In the oligomer of above-mentioned general formula (1), the material of preferred degree of polymerization n=2～4 (molecular weight 400～700), the more preferably material of polymerization degree n=2～3 (molecular weight 400～500).
Figure BDA00001874855600132
2,2-dimethoxy-1,2-diphenylethane-1-ketone
Figure BDA00001874855600133
2-methyl isophthalic acid-(4-methyl mercapto phenyl)-2-morpholinyl-1-acetone
With respect to base resin 100 mass parts in the radiation-curable resin combination of the adhesive phase of the semiconductor wafer adhesive sheet for processing that constitutes first mode, the use level of Photoepolymerizationinitiater initiater is 0.1 mass parts～10 mass parts.Preferably, preferably cooperate 1 mass parts～10 mass parts, more preferably cooperate 2 mass parts～7 mass parts with respect to base resin 100 mass parts.In the radiation-curable resin combination of the adhesive phase of the semiconductor wafer adhesive sheet for processing that constitutes second mode,, cooperate 0.1 mass parts～10 mass parts with respect to acrylic acid series polymeric compounds 100 mass parts.Preferably, preferably cooperate 1 mass parts～10 mass parts, more preferably cooperate 2 mass parts～7 mass parts with respect to acrylic acid series polymeric compounds 100 mass parts.
If Photoepolymerizationinitiater initiater is very few, and then three-dimensional nettedization based on radiation exposure of adhesive phase is insufficient, thereby can't successfully peel off or become the reason of polluting semiconductor chip with the cement layer.In addition, if Photoepolymerizationinitiater initiater is too much, the effect that then not only can't obtain to be complementary with it, and this Photoepolymerizationinitiater initiater also can remain on the wafer.
As required, above-mentioned Photoepolymerizationinitiater initiater can share more than 2 kinds.As long as employed each Photoepolymerizationinitiater initiater based on the weight average molecular weight of GPC less than 1000.And can be that Photoepolymerizationinitiater initiater share as photopolymerization promoter also with amines such as triethylamine, tetraethylenepentamine, DMAE or thioxanthones.
In the radiation-curable resin combination, as required,, also can contain tackifiers, bonding adjustment agent, surfactant, other modifier or habitual composition in order to adjust bonding force with respect to semiconductor wafer.Wherein, surfactant or demonstrate surface-active compound etc. and also can pollute semiconductor wafer sometimes, thereby under situation about using, preferable amount is the least possible.
Among the present invention; The weight average molecular weight that will contain above-mentioned base resin, in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least is that the radioactive ray polymer resin composition of the compound below 10,000, specific Photoepolymerizationinitiater initiater, crosslinking agent in case of necessity and other compounding ingredient composition directly is coated on the substrate resin film and carries out heat drying; Perhaps above-mentioned radioactive ray polymer resin composition is coated on for the time being and carries out drying on the peeling paper; Be transferred to afterwards on the substrate resin film, make the semiconductor wafer adhesive sheet for processing that adhesive phase is served as reasons and used the layer of radioactive ray polymer resin compositions and constituted thus.
The not special restriction of the thickness of adhesive phase.The mode that common thickness according to adhesive phase is generally 5 μ m～100 μ m forms adhesive phase, processes the semiconductor wafer adhesive sheet for processing of sheet, band shape etc.
As radioactive ray, can use alpha ray, gamma-rays, electron ray, ultraviolet ray etc., reduce the radioactive ray of bonding force as long as can make adhesive phase take place to solidify, just not special the qualification.Preferred electron ray, ultraviolet ray; When using Photoepolymerizationinitiater initiater, more preferably ultraviolet ray.
As semiconductor wafer adhesive sheet for processing of the present invention, as shown in Figure 2, adhesive phase 2 can be set on substrate resin film 1, further form cement layer 3 above that.For on the substrate resin film, forming adhesive phase, next form not special qualification of method of cement layer, can according to existing method on the substrate resin film lamination adhesive phase, further lamination cement layer gets final product on adhesive phase.
In this case, the semiconductor wafer adhesive sheet for processing is fitted in the back surface of semiconductor wafer after the grinding, thereafter, forms the face side, cut adhesive and cement simultaneously through cutting processing from the circuit of semiconductor wafer.So can obtain having the semiconductor chip of cement layer.Cement as using in the cement layer 3 can use existing cement.
As the cement layer, can use with cement become membranization in advance and obtain the layer.For example, can use existing polyimide resin used in cement, polyamide, polyetherimide resin, polyamide-imide resin, mylar, polyesterimide resin, phenoxy resin, polysulfone resin, polyethersulfone resin, polyphenylene sulfide, polyether ketone resin, chlorinated polypropylene, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melmac etc.; Or their mixture.
Wherein, the good aspect of the thermal endurance after solidifying is considered, especially preferably uses epoxy resin.For epoxy resin, as long as for the epoxy resin that is bonding effect takes place to solidify.In order to improve glass transition temperature (Tg), can add polyfunctional epoxy resin to guarantee the thermal endurance of cement layer.As polyfunctional epoxy resin, can example go out line style phenol aldehyde type epoxy resin, cresol-novolac epoxy resin etc.The material for using as curing agent usually do not have special qualification for curing agent for epoxy resin, as long as can be enumerated amine compound, polyamide, acid anhydrides, polythiaether, boron trifluoride; As bisphenol-A, Bisphenol F and the bisphenol S etc. that have the compound of 2 above phenolic hydroxyl groups in 1 molecule.
Particularly because the electrocorrosion-resisting property during moisture absorption is excellent, the preferred use as the linear phenol-aldehyde resin of phenol resin or linetype bisphenol phenolic resins etc.And, consider from shortening the aspect of solidifying used heat treatment time, preferably together use curing accelerator with curing agent.As curing accelerator, can use the alkali such as various imidazoles of glyoxal ethyline, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazole trimellitate and so on.
In addition, for the bonding force of wild phase, preferably in above-mentioned resin or its mixture, add silane coupling agent or titanium coupling agent as additive for semiconductor chip or lead frame.And,, also can add filler from the purpose of stable on heating raising or mobile adjusting.As such filler, can use oxide of for example silica, aluminium oxide and antimony etc.For these fillers, as long as maximum particle diameter just can be used with arbitrary proportion less than the thickness of cement layer.
For the not special restriction of the thickness of cement layer, be preferably usually about 5 μ m～100 μ m.In addition, the cement layer can lamination on whole of the adhesive phase of bonding film.And also can with cut in advance (precut, precut) become the cement with the semiconductor wafer corresponding shape of being fitted to amass layer by layer on the part of adhesive phase.In this case, demonstrate that part that semiconductor wafer fits has that part that cement layer, cutting fit with annular frame does not have the cement layer and the shape that only has the adhesive phase of bonding film.Through processing this shape, on ring frame, be fitted with adhesive phase, be not difficult to usually and the cement layer of being peeled off by fitting body and fit, thereby semiconductor wafer adhesive sheet for processing of the present invention can easily be peeled off from ring frame after use.
For semiconductor wafer adhesive sheet for processing of the present invention, owing to when peeling off, shine radioactive ray from substrate resin film side, thus adhesive phase is solidified, thereby the substrate resin film need be the radioactive ray permeability.And, when wafer process, can receive owing to the impact due to the cutting edge etc., receive the pressure due to the rinse water etc.Therefore, for the substrate resin film, select to have the intensity that to bear these, corresponding material and thickness with it.Because on the adhesive phase formation face of substrate resin film, adhesive phase is difficult for peeling off from the substrate resin film, thereby preferably to implement with the corona treatment be the various surface treatments of representative.
As material used in the substrate resin film, can enumerate: polyethylene, polypropylene, ethylene-propylene copolymer, polyvinyl chloride, PETG, polybutylene terephthalate (PBT), vinyl-vinyl acetate copolymer, poly-1-butylene, gather-4-methyl 1-amylene, the film of ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyurethane, polymethylpentene, polybutadiene etc.
The thickness of substrate resin film is 30 μ m～500 μ m, be preferably 40 μ m～300 μ m, further be preferably 50 μ m～200 μ m.If this thickness is thin excessively, strength reduction then, thereby produce sometimes by the unfavorable condition due to the fracture in the semiconductor wafer processing etc.
On the other hand, if the substrate resin film is blocked up, picking up in the operation of the semiconductor chip after cutting action finishes then, the semiconductor wafer adhesive sheet for processing is really up to the mark, in the jack-up based on thimble, produces obstacle.And, finish at cutting action, in the expansion operation before picking up operation, be difficult to the semiconductor wafer adhesive sheet for processing is fully stretched.Therefore, the gap of semiconductor chip is little, and is insufficient based on the chip identification property of image, and picking up of generation semiconductor chip is bad.
[embodiment]
Based on embodiment the present invention is carried out more detailed explanation below, but the present invention is not limited to these embodiment.
A. radiation-curable
1. the preparation of used radiation-curable resin combination in the adhesive phase of the semiconductor wafer of first mode processing with adhesive tape
(1) combined to comprise the preparation of polymer of the residue of (methyl) acrylic monomer part for the repetitive of main chain with the group that contains the radiation-curable carbon-to-carbon double bond
Use butyl acrylate (59mol%), acrylic acid-2-hydroxyl ethyl ester (25mol%) and acrylic acid (16mol%) to make acrylic acid series copolymer.The acrylic acid of this acrylic acid series copolymer-2-hydroxyl ethyl ester side chain terminal OH base and the NCO base of 2-methacryloxyethyl isocyanates are reacted, obtain having combined to comprise the polymer of the residue of (methyl) acrylic monomer part with the group that contains the radiation-curable carbon-to-carbon double bond for the repetitive of main chain.At this moment, suitably change the dripping quantity of 2-isocyanates EMA, obtain two key amount different polymer ((a1)～(a4)).The weight average molecular weight of resulting polymer ((a1)～(a4)) is 700,000, glass transition temperature is-60 ℃.Among table 1-1～1-4, the iodine value of used polymer (a1) is 20 among embodiment 1-1～1-9,1-11 and comparative example 1-1～1-4, the 1-7.And the iodine value of used polymer (a2) is 50 among the embodiment 1-10, the iodine value of used polymer (a3) is 0.5 among the embodiment 1-12, the iodine value of used polymer (a4) is 55 among the embodiment 1-13.
In following explanation, ((a1)～(a4)) describes as polymer (a) with polymer.
(i) weight average molecular weight
Adopt the GPC of following condition to carry out the mensuration of weight average molecular weight for polymer (a).
GPC device: HLC-8120GPC (trade name, Dong Caoshe makes)
Post: TSK gel SuperHM-H/H4000/H3000/H2000 (trade name, Dong Caoshe makes)
Flow: 0.6ml/min,
Concentration: 0.3 quality %,
Injection rate: 20 μ l,
Column temperature: 40 ℃
Launch solvent: chloroform
(ii) glass transition temperature
Use is measured for 5 ℃/minute with programming rate as the differential scanning calorimetric analysis appearance (DSC) of differential scanning calorimetric analysis appearance (DSC) (DSC7020 (trade name), Seiko Instruments (strain) society makes).
(iii) two key amounts
Obtain iodine value based on JIS K 0070.
(2) preparation of radiation-curable resin combination
In the polymer that in (1), obtains (a) 100 mass parts; Cooperate light trigger with the described umber of table 1-1～table 1-4; Further cooperate polyisocyanate compound (Japanese polyurethane society manufacturing as curing agent; Trade name CORONATE L) 3 mass parts, the embodiment of preparation table 1-1～table 1-4 and the radiation-curable resin combination of comparative example record.Use the polymeric azo polymerization initiator that contain polyethylene glycol unit of VPE-0201 (the pure pharmaceutical worker's industry of trade name and light society makes) as light trigger used among comparative example 1-1, the 1-7.
The weight average molecular weight of light trigger is measured through the GPC method, uses polystyrene to calculate weight average molecular weight as standard substance.Its result is shown among table 1-1～1-4 in the lump.As gel permeation chromatograph, the OligoPore 300 * 7.5 (trade name) that uses Polymer Laboratories to make.Launch solvent and use chloroform, measure at 40 ℃.
2. the processing of the semiconductor wafer of second mode is with the preparation of the radiation-curable resin combination of adhesive tape
(1) acrylic acid series polymeric compounds of formation adhesive phase
Use n-butyl acrylate 85 mass parts, ethyl acrylate 10 mass parts and acrylic acid 5 mass parts, preparation is as the acrylic acid series copolymer of the base resin that constitutes adhesive phase.Its weight average molecular weight is 600,000.
(2) weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least is the compound below 10,000
Use UN-3320HA (trade name; Industry manufacturing on the root), UN-9000PEP (trade name, industry is made on the root), UN-6050PTM (trade name, industry is made on the root), UN-901T (trade name; Industry manufacturing on the root), UN-9200A (trade name, industry is made on the root).
The polystyrene conversion weight average molecular weight of employed compound and two key amount are measured through following method.Its result is following.
UN-3320HA (trade name, industry is made on the root): 1500 (two key amounts: 6)
UN-3320HC (trade name, industry is made on the root): 1500 (two key amounts: 6)
UN-9000PEP (trade name, industry is made on the root): 5000 (two key amounts: 2)
UN-6050PTM (trade name, industry is made on the root): 6000 (two key amounts: 2)
UN-901T (trade name, industry is made on the root): 4000 (two key amounts: 9)
UN-9200A (trade name, industry is made on the root): 11500 (two key amounts: 2)
(condition determination of weight average molecular weight)
GPC device: HLC-8120GPC (trade name, Dong Caoshe makes)
Post: TSK-GEL G2500HHR (trade name, Dong Caoshe makes)
Flow: 1ml/min
Concentration: 0.2mg/ml
Injection rate: 100 μ l,
Thermostat temperature: 40 ℃
Mobile phase: chloroform
(assay methods of two key amounts)
Two key amounts
Obtain iodine value based on JIS K 0070, calculate two key amounts by this value.
(3) preparation of radiation-curable resin combination
In base resin 100 mass parts of (1), cooperating the weight average molecular weight that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least of record in (2) by the described umber of table 2-1～table 2-4 is 10; Compound below 000 and light trigger; Further cooperate polyisocyanate compound (Japanese polyurethane society manufacturing as curing agent; Trade name CORONATEL) 3 mass parts, the radiation-curable resin combination of the embodiment of preparation table 2-1～table 2-4 and comparative example record thus.Use the polymeric azo polymerization initiator that contain polyethylene glycol unit of VPE-0201 (the pure pharmaceutical worker's industry of trade name and light society makes) as light trigger used among comparative example 2-1, the 2-6.
The weight average molecular weight of light trigger is measured through gel permeation chromatography (GPC) method, calculates weight average molecular weight with polystyrene as standard substance.Its result is shown among table 2-1～2-4 in the lump.As gel permeation chromatograph, the OligoPore 300 * 7.5 (trade name) that uses PolymerLaboratories to make.Launch solvent and use chloroform, measure at 40 ℃.
B. the making of semiconductor wafer adhesive sheet for processing (I)
Use EMMA resin (manufacturer of the Sumitomo Chemical society name of an article, trade name: ACRYFT WD201), make the substrate resin film that thickness is 100 μ m through the T modulus method.Radiation-curable resin combination shown in embodiment 1-1～1-10,1-12～1-13,2-1～2-10, comparative example 1-1～1-4, the 2-1～2-5 is applied to this substrate resin film, carries out suitable maintenance.Obtain having semiconductor wafer adhesive sheet for processing adhesive phase, formation shown in Figure 1 that dried thickness is 10 μ m thus.
3. the making of semiconductor wafer adhesive sheet for processing (II)
(1) adjustment of the binder compositions of formation knitting layer
In the composition of following formation, adding cyclohexanone mixes; Further used ball mill mixing 90 minutes; In the said composition; With respect to cresol-novolac epoxy resin 50 mass parts, phenol resin 50 weight portions, contain as γ-Qiu Jibingjisanjiayangjiguiwan 3 mass parts of silane coupling agent and γ-urea groups propyl-triethoxysilicane 5 mass parts and as spherical silicon dioxide 30 weight portions of filler as epoxy resin.
In above-mentioned composition, add acrylic rubber (weight average molecular weight 150,000) 300 amount portions and, mix, carry out vacuum degassing, obtain binder compositions as 1-cyanoethyl-2-phenylimidazole 1 mass parts of curing accelerator.
(2) making of semiconductor wafer adhesive sheet for processing
With the binder compositions that obtains in (1) be coated on thickness 35 μ m on the PETG film (antiadhesion barrier) of release treatment; Under 140 ℃, carry out 5 minutes heat dryings, obtained on thickness is the antiadhesion barrier of B rank (ス テ one ジ) state of 20 μ m, having formed the cement sheet material of cement layer.
Next; Adopt the identical method of being put down in writing with the making (I) of above-mentioned 2. semiconductor wafer adhesive sheet for processing of method, obtain the embodiment 1-11 of use table 1-4 and the described radioactive ray polymer resin composition of comparative example 1-7 has formed the structure shown in Figure 1 of adhesive phase on the substrate resin film semiconductor wafer adhesive sheet for processing.With this adhesive phase and adopt the cement layer of the cement sheet material that said method makes to dock and carry out lamination, the lamination on the semiconductor wafer adhesive sheet for processing that obtains formation shown in Figure 2 has the bonding sheet of antiadhesion barrier (embodiment 1-11 and comparative example 1-7).
In addition, the described radioactive ray polymer resin composition of embodiment 2-11～2-15, comparative example 2-6,2-7 that adopts the identical method of being put down in writing in the making (I) with above-mentioned 2. semiconductor wafer adhesive sheet for processing of method to obtain use table 2-4 has formed the semiconductor wafer adhesive sheet for processing of the structure shown in Figure 1 of adhesive phase on the substrate resin film.This adhesive phase docked with the cement layer of the cement sheet material of making as stated above carry out lamination, the lamination on the semiconductor wafer adhesive sheet for processing that has obtained formation shown in Figure 2 has the bonding sheet of antiadhesion barrier (embodiment 2-11～2-15, comparative example 2-6,2-7).
In following test, antiadhesion barrier is peeled off, thereby conformed to semiconductor wafer, estimate.
4. performance test
Under following condition, cut, thereafter the evaluation of picking up property and chip contaminative.
(cutting condition)
(1) the semiconductor wafer adhesive sheet for processing of Fig. 1 formation
About embodiment 1-1～1-10,1-12,1-13,2-1～2-10, comparative example 1-1～1-4,2-1～2-5; " DFD-840 " that uses DISCO society to make; 30 μ m grindings are carried out with twin shaft in the back side of silicon wafer, carry out grinding afterwards so that the final thickness of silicon wafer is 100 μ m.The grinding condition of this moment is following.
Single shaft: 350 grinding stones (rotating speed: 4800rpm, decrease speed: P1:3.0 μ m/sec, P2:2.0 μ m/sec)
Twin shaft: #2000 grinding stone (rotating speed: 5500rpm, decrease speed: P1:0.8 μ m/sec, P2:0.6 μ m/sec)
Overleaf after the grinding in 5 minutes; The semiconductor wafer adhesive sheet for processing applying of Fig. 1 formation is fixed in 8 inches uses annular frame; Under this fits fixing state; 8 inches silicon wafers that 100 μ m are thick conform to the semiconductor wafer adhesive sheet for processing, use the cutter sweep DAD340 (trade name) of DISCO society manufacturing, are cut into the chip size of 5mm * 5mm entirely.At this moment, the cutting depth from semiconductor wafer adhesive sheet for processing face blade is 30 μ m under the situation of the bonding sheet of formation shown in Figure 1.
(2) the semiconductor wafer adhesive sheet for processing of Fig. 2 formation
About embodiment 1-11,2-11～2-15 and comparative example 1-7,2-6,2-7; The semiconductor wafer adhesive sheet for processing that on the thick 8 inches silicon wafers of 100 μ m, constitutes with 70 ℃, 20 seconds applying Fig. 2 uses Disco society to make DFD6340 then and cuts by following condition.
Cutting blade (slim grindstone): the 1st 27HEEE, the 2nd 27HEDD for the manufacturing of Disco society for the manufacturing of Disco society
Rotating speed of flail: 35000rpm
Blade feed speed: 50mm/s
Chip size: 5mm * 5mm
Cutting depth:
The 1st time to silicon wafer direction 50 μ m
The 2nd time to semiconductor wafer adhesive sheet for processing direction 40 μ m (thickness of substrate resin film is that the thickness of 100 μ m, adhesive phase is that the thickness of 10 μ m, cement layer is 20 μ m)
4-1. pick up test
Semiconductor wafer adhesive sheet for processing about embodiment 1-1～1-10,1-12,1-13,2-1～2-10, comparative example 1-1～1-4,2-1～2-5 and embodiment 1-11,2-11～2-15, comparative example 1-7,2-6,2-7; Respectively above-mentioned 4. (1) and (2) shown in cut under the condition after; Using the ultraviolet irradiation machine of high-pressure mercury lamp, is 200mJ/cm by exposure 2Carry out ultraviolet irradiation from the substrate resin face side of semiconductor wafer adhesive sheet for processing, use CANON MACHINERY system CPS-6820 (trade name) thereafter, 5mm expands with extension stroke (expand stroke), under this state, picks up.Pick up and use tip directly to carry out as the thimble of R250.For assessment item, implement to following project.
(1) picking up property
Chip is carried out actual picking up, estimate and whether can carry out no problem ground of a. chip jack-up, b. no problemly adsorbed and c. is arranged on the lead frame each with wafer by circular chuck.In evaluation,, wherein can pick up what chip-count and estimate through from 8 inches wafers, picking up 200 chips.With having picked up 180 situation more than the chip in 200 chips, illustrated among table 1-1～2-4 and picked up successfully chip-count as qualified.
(2) chip contaminative
Semiconductor wafer adhesive sheet for processing (embodiment 1-1～1-10,1-12,1-13,2-1～2-10, comparative example 1-1～1-4,2-1～2-5), estimate the chip contaminative for Fig. 1 formation by following method.
(2)-1 visual test
When carrying out above-mentioned cutting (チ ッ ピ Application グ) property evaluation, peel off chip, confirm through visual.Chip back surface situation by the iris gloss due to the adhering to of the applying of adhesive or pollutant do not occurred as qualified, and qualified information slip is shown zero; With producing a little gloss but no problem water-glass and be shown △ for practical; With the situation that is fitted with adhesive as defective, be expressed as *.
(2)-2 foreign matter test
Through the carrying out of surface clean bright finished silicon wafer (6 inches) go up the laminated semiconductor wafer process and use bonding sheet, place after 24 hours, peel off this sheet material.Using laser surface inspection apparatus (Surfscan? 6420 (product name, KLA · Tencor Co., Ltd.) to determine the bonding surface of the wafer through the sheet number of the foreign residues.According to metewand as follows resulting result is judged.Wherein, with ◎ and zero as qualified, with △ as level no problem in the practicality, will * as defective.This result is shown in the table.
◎: less than 20; Zero: more than or equal to 20, less than 90; △: more than or equal to 90, less than 200; *: more than or equal to 200
(3) fissility of adhesive phase and cement layer
Upload the silicon wafer of putting 5 inches of diameters at the heating plate that is heated to 80 ℃; After confirming to be 80 ℃ to the surface temperature of this silicon wafer, the semiconductor wafer adhesive sheet for processing (embodiment 1-11,2-11～2-15 and comparative example 1-7,2-6,2-7) that utilizes the Fig. 2 that fits about 10 seconds to constitute., remove heating plate, make the surface temperature of the silicon wafer that is fitted with the semiconductor wafer adhesive sheet for processing reduce to room temperature thereafter.
Thereafter, using the ultraviolet irradiation machine of high-pressure mercury lamp, is 200mJ/cm by exposure 2Mode carry out ultraviolet irradiation from the substrate resin face side of semiconductor wafer adhesive sheet for processing.Based on JIS-0237, for the silicon wafer of semiconductor wafer adhesive sheet for processing ultraviolet irradiation after carry out peeling force measure thereafter.Condition determination be 90 ° peel off, peeling rate is 50mm/ minute.With this peeling force be below the 0.5N/25mm situation as qualified, be designated as zero.
[table 1-1]
Figure BDA00001874855600231
[table 1-2]
Figure BDA00001874855600232
[table 1-3]
[table 1-4]
Figure BDA00001874855600241
[table 2-1]
Figure BDA00001874855600242
[table 2-2]
Figure BDA00001874855600243
[table 2-3]
[table 2-4]
Figure BDA00001874855600252
5. adhesive tape is used in the processing of the semiconductor wafer of first mode
1-1～1-3 can know by table, in the embodiment that the semiconductor wafer adhesive sheet for processing of formation shown in Figure 1 is estimated, in 200 chips, can pick up the above semiconductor chip of 180 chips, and chip pollution or foreign matter are residual few, can pick up smoothly.Observed chip contaminative or retained foreign body among the embodiment 1-6 a little, but be the practical no problem level that.
In addition, under situation, in 200 chips, can pick up 180 chip semiconductor chips, demonstrate the characteristic of qualified level by the semiconductor wafer adhesive sheet for processing that to have used iodine value be 0.5 polymer (a) constitutes as the adhesive phase of base resin.
Relative therewith; The polymeric azo polymerization initiator that contains the polyethylene glycol unit in use is during as Photoepolymerizationinitiater initiater (comparative example 1-1); Light trigger can not dissolve full and uniformly, and moving of the free radical that is produced can't fully successfully be carried out, and has only picked up half in 200 chips as a result.
And, being less than in the amount of Photoepolymerizationinitiater initiater under the situation of 0.1 mass parts (comparative example 1-2,1-3), the free radical undersupply based on initator has problems aspect picking up property; Under situation (comparative example 1-4), produce chip based on the distillation of unreacted reactant and pollute more than 10 mass parts.
And; 1-4 can know by table; In the embodiment 1-11 that the semiconductor wafer adhesive sheet for processing of formation shown in Figure 2 is estimated, can carry out the interface peel between adhesive phase and the cement layer smoothly, can all semiconductor chips in 200 chips be picked up.
Relative therewith, in comparative example 1-7, can't carry out the interface peel between adhesive phase and the cement layer smoothly, only can pick up 100 chip semiconductor chips in 200 chips.
5. adhesive tape is used in the processing of the semiconductor wafer of second mode
2-1～2-3 can know by table, in the embodiment that the semiconductor wafer adhesive sheet for processing of formation shown in Figure 1 is estimated, can all semiconductor chips in 200 chips be picked up, and chip pollution or foreign matter are residual few, can pick up smoothly.Embodiment 2-6 has observed chip contaminative or retained foreign body a little, but is the practical no problem level that.
Relative therewith; The polymeric azo polymerization initiator that contains the polyethylene glycol unit in use is during as Photoepolymerizationinitiater initiater (comparative example 2-1); Light trigger can not dissolve full and uniformly, and moving of the free radical that is produced can't fully successfully be carried out, and has only picked up half in 200 chips as a result.
And, be less than in the amount of Photoepolymerizationinitiater initiater under the situation of 0.1 mass parts (comparative example 2-2), based on the free radical undersupply of initator, thereby aspect picking up property, have problems; Under situation (comparative example 2-3), produce chip based on the distillation of unreacted reactant and pollute more than 10 mass parts.
Be less than 1 mass parts (comparative example 2-4), then picking up property reduction if in molecule, have the cooperation umber of the compound of 2 optical polymerism carbon-to-carbon double bonds at least.Otherwise, under the situation of cooperation umber more than 300 mass parts of radioactive ray polymerizable compound (comparative example 2-5), cure shrinkage takes place in the adhesive phase, the adhesive driving fit is at chip back, thereby observes the reduction of picking up property.
In addition; 2-4 can know by table; In embodiment 2-11～2-15 that the semiconductor wafer adhesive sheet for processing of formation shown in Figure 2 is estimated, can carry out the interface peel between adhesive phase and the cement layer smoothly, can all semiconductor chips in 200 chips be picked up.
Relative therewith, in the comparative example 2-6 that has used the big Photoepolymerizationinitiater initiater of weight average molecular weight, can't carry out the interface peel between adhesive phase and the cement layer smoothly, can only pick up 100 chip semiconductor chips in 200 chips.
And, be among the comparative example 2-7 of 11,500 material in the weight average molecular weight of having used the compound that in molecule, has 2 optical polymerism carbon-to-carbon double bonds at least, with comparative example 2-6 likewise, can only pick up 100 chip semiconductor chips in 200 chips.
Although the present invention and execution mode thereof are illustrated in the lump; But the inventor thinks; As long as do not limit especially; Then all invention does not limit to the application at arbitrary slight part of explaining, should under the situation of not violating invention spirit shown in the said claim and scope, make wide in range explanation.
The application advocates based on proposing the special 2010-84447 of hope of Japan of patent application and the priority at the special 2010-84531 of hope of Japan of Japan's proposition patent application on March 31st, 2010 in Japan on March 31st, 2010; For above-mentioned application, a part of its content being put down in writing as this specification with the mode of reference is incorporated in this specification.
[symbol description]
1 substrate resin film
2 adhesive phases
3 cement layers
10,20 semiconductor wafer adhesive sheet for processing.

Claims (6)

1. semiconductor wafer adhesive sheet for processing, this semiconductor wafer adhesive sheet for processing is formed with the substrate resin film of radioactive ray permeability and the adhesive phase on this substrate resin film, and said semiconductor wafer adhesive sheet for processing is characterised in that:
This adhesive phase is made up of the layer that has used the radiation-curable resin combination, in said radiation-curable resin combination, with respect to (i-1) base resin 100 mass parts, contains (iii) Photoepolymerizationinitiater initiater (b) 0.1 mass parts～10 mass parts,
Said (i-1) base resin is to be the base resin of principal component with acrylic acid series polymeric compounds (a); In this acrylic acid series polymeric compounds (a); The residue that has combined to have (methyl) acrylic monomer part for the repetitive of main chain; Said (methyl) acrylic monomer partly has the group that comprises the radiation-curable carbon-to-carbon double bond
The weight average molecular weight that by the gel permeation chromatography that is called as GPC and with the polystyrene is the said Photoepolymerizationinitiater initiater (b) (iii) that converts of standard substance is less than 1000.
2. semiconductor wafer adhesive sheet for processing, this semiconductor wafer adhesive sheet for processing is formed with the substrate resin film of radioactive ray permeability and the adhesive phase on this substrate resin film, and said semiconductor wafer adhesive sheet for processing is characterised in that:
This adhesive phase is made up of the layer that has used the radiation-curable resin combination; In said radiation-curable resin combination; With respect to (i-2) acrylic acid series polymeric compounds 100 mass parts; Contain (ii) compound (c) 1 mass parts～300 mass parts and (iii) Photoepolymerizationinitiater initiater (b) 0.1 mass parts～10 mass parts
Said compound (c) (ii) has 2 optical polymerism carbon-to-carbon double bonds at least in molecule, and its weight average molecular weight is below 10,000,
By the gel permeation chromatography that is called as GPC is that the weight average molecular weight of the said Photoepolymerizationinitiater initiater (b) (iii) that converts of standard substance is less than 1000 with the polystyrene.
3. according to claim 1 or claim 2 semiconductor wafer adhesive sheet for processing; It is characterized in that; Said Photoepolymerizationinitiater initiater (b) is for being selected from by 1-hydroxyl-cyclohexyl phenyl-ketone, 2; 2-dimethoxy-1, at least a in the group that oligomer shown in 2-diphenylethane-1-ketone, 2-methyl isophthalic acid-(4-methyl mercapto phenyl)-2-morpholinyl-1-acetone and the formula (1) is formed
Figure FDA00001874855500021
General formula (1)
In the formula, R representes alkyl; N is an integer.
4. semiconductor wafer adhesive sheet for processing as claimed in claim 3 is characterized in that, the degree of polymerization of the oligomer shown in the said general formula (1) is n=2～4.
5. like claim 1,3 or 4 described semiconductor wafer adhesive sheet for processing; It is characterized in that; The iodine value of said polymer (a) is 1～50, and this polymer (a) contains acrylic monomer as construction unit, in said acrylic monomer; For the repetitive of main chain, has the group that contains radioactive ray polymerism carbon-to-carbon double bond.
6. a semiconductor wafer adhesive sheet for processing is characterized in that, on the adhesive phase of each described semiconductor wafer adhesive sheet for processing of claim 1～5, further is provided with the cement layer.
CN2011800058308A 2010-03-31 2011-03-29 Adhesive sheet for semiconductor wafer processing Pending CN102714151A (en)

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