CN102696116A - 涂覆阻挡层的薄膜光伏电池 - Google Patents

涂覆阻挡层的薄膜光伏电池 Download PDF

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Publication number
CN102696116A
CN102696116A CN2010800450728A CN201080045072A CN102696116A CN 102696116 A CN102696116 A CN 102696116A CN 2010800450728 A CN2010800450728 A CN 2010800450728A CN 201080045072 A CN201080045072 A CN 201080045072A CN 102696116 A CN102696116 A CN 102696116A
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CN
China
Prior art keywords
photovoltaic cell
layer
cell device
film photovoltaic
substrate
Prior art date
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Pending
Application number
CN2010800450728A
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English (en)
Chinese (zh)
Inventor
P·F·卡西亚
R·S·麦利恩
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EIDP Inc
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EI Du Pont de Nemours and Co
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Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN102696116A publication Critical patent/CN102696116A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
CN2010800450728A 2009-08-05 2010-08-05 涂覆阻挡层的薄膜光伏电池 Pending CN102696116A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23149309P 2009-08-05 2009-08-05
US61/231493 2009-08-05
PCT/US2010/044483 WO2011017479A2 (fr) 2009-08-05 2010-08-05 Cellules photovoltaïques à couches minces à revêtement protecteur

Publications (1)

Publication Number Publication Date
CN102696116A true CN102696116A (zh) 2012-09-26

Family

ID=43544933

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800450728A Pending CN102696116A (zh) 2009-08-05 2010-08-05 涂覆阻挡层的薄膜光伏电池

Country Status (5)

Country Link
EP (1) EP2462626A4 (fr)
JP (1) JP2013501382A (fr)
KR (1) KR20120055588A (fr)
CN (1) CN102696116A (fr)
WO (1) WO2011017479A2 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104995716A (zh) * 2012-12-31 2015-10-21 美国圣戈班性能塑料公司 柔性基材上的薄膜氮化硅阻挡层
CN105161623A (zh) * 2015-08-07 2015-12-16 常州大学 一种钙钛矿太阳能电池及其制备方法
CN110892090A (zh) * 2017-07-27 2020-03-17 瑞士艾发科技 渗透屏障
CN112526663A (zh) * 2020-11-04 2021-03-19 浙江大学 一种基于原子层沉积的吸收膜及其制作方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20095947A0 (fi) * 2009-09-14 2009-09-14 Beneq Oy Monikerrospinnoite, menetelmä monikerrospinnoitteen valmistamiseksi, ja sen käyttötapoja
EP2742533A2 (fr) * 2011-08-10 2014-06-18 Saint-Gobain Glass France Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire
EP2954562A2 (fr) 2013-02-07 2015-12-16 First Solar, Inc Dispositif photovoltaïque à couche protectrice sur une couche de fenêtre et procédé de fabrication associé
KR101886832B1 (ko) * 2017-11-20 2018-08-08 충남대학교산학협력단 전하 선택 접합 실리콘 태양 전지 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140414A (ja) * 2004-11-15 2006-06-01 Matsushita Electric Ind Co Ltd 太陽電池用基板及びこれを用いた太陽電池
WO2007012026A1 (fr) * 2005-07-19 2007-01-25 Solyndra, Inc. Revetements autonettoyants
US20070295386A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a hybrid organic/inorganic protective layer
US20090159119A1 (en) * 2007-03-28 2009-06-25 Basol Bulent M Technique and apparatus for manufacturing flexible and moisture resistive photovoltaic modules

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081789A2 (fr) * 2004-02-19 2005-09-09 Nanosolar, Inc. Formation de materiaux à couches absorbantes de cigs faisant intervenir un depot de couche atomique et un traitement de surface a haut debit
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
JP2008130647A (ja) * 2006-11-17 2008-06-05 Toppan Printing Co Ltd 太陽電池モジュール用のバックシート及び該バックシートを用いた太陽電池モジュール
US7959742B2 (en) 2007-07-11 2011-06-14 Whirlpool Corporation Outer support body for a drawer-type dishwasher
JP2009043967A (ja) * 2007-08-09 2009-02-26 Toppan Printing Co Ltd 太陽電池用裏面保護シート及びこれを用いた太陽電池モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140414A (ja) * 2004-11-15 2006-06-01 Matsushita Electric Ind Co Ltd 太陽電池用基板及びこれを用いた太陽電池
WO2007012026A1 (fr) * 2005-07-19 2007-01-25 Solyndra, Inc. Revetements autonettoyants
US20070295386A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a hybrid organic/inorganic protective layer
US20090159119A1 (en) * 2007-03-28 2009-06-25 Basol Bulent M Technique and apparatus for manufacturing flexible and moisture resistive photovoltaic modules

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104995716A (zh) * 2012-12-31 2015-10-21 美国圣戈班性能塑料公司 柔性基材上的薄膜氮化硅阻挡层
CN105161623A (zh) * 2015-08-07 2015-12-16 常州大学 一种钙钛矿太阳能电池及其制备方法
CN110892090A (zh) * 2017-07-27 2020-03-17 瑞士艾发科技 渗透屏障
CN110914469A (zh) * 2017-07-27 2020-03-24 瑞士艾发科技 渗透屏障
TWI770226B (zh) * 2017-07-27 2022-07-11 瑞士商艾維太克股份有限公司 層沉積設備及在起始基板上提供滲透阻障層系統或製造設置有表面滲透阻障層系統的基板的方法
CN112526663A (zh) * 2020-11-04 2021-03-19 浙江大学 一种基于原子层沉积的吸收膜及其制作方法

Also Published As

Publication number Publication date
KR20120055588A (ko) 2012-05-31
EP2462626A4 (fr) 2013-10-16
EP2462626A2 (fr) 2012-06-13
JP2013501382A (ja) 2013-01-10
WO2011017479A3 (fr) 2011-06-16
WO2011017479A2 (fr) 2011-02-10

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Application publication date: 20120926