EP2742533A2 - Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire - Google Patents

Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire

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Publication number
EP2742533A2
EP2742533A2 EP12750550.1A EP12750550A EP2742533A2 EP 2742533 A2 EP2742533 A2 EP 2742533A2 EP 12750550 A EP12750550 A EP 12750550A EP 2742533 A2 EP2742533 A2 EP 2742533A2
Authority
EP
European Patent Office
Prior art keywords
layer
diffusion
electrode
solar module
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12750550.1A
Other languages
German (de)
English (en)
Inventor
Arnaud Verger
Fabien Lienhart
Paul Mogensen
Walter Stetter
Alejandro AVELLÁN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to EP12750550.1A priority Critical patent/EP2742533A2/fr
Publication of EP2742533A2 publication Critical patent/EP2742533A2/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention is in the technical field of photovoltaic power generation and relates to a solar module with a reduced power loss due to aging, a method for producing the same, as well as the use of a diffusion barrier in such a solar module.
  • Photovoltaic layer systems for the direct conversion of sunlight into electrical energy are well known. These are commonly referred to as “solar cells”.
  • the term “thin film solar cells” refers to layer systems with low thicknesses of only a few microns, the substrates for sufficient mechanical strength ⁇ specific need.
  • Known carrier substrates comprehensive sen inorganic glass, plastics (polymers) or Metal ⁇ le, particularly metal alloys, and may be designed as rigid plates, or flexible films, depending on the respective layer thickness and the specific material properties.
  • thin-film solar cells with a semiconductor layer of amorphous, micromorphous or polycrystalline silicon, cadmium telluride (CdTe), gallium arsenide (GaAs) or a chalcopyrite compound, in particular copper indium / gallium sulfur /Selenium
  • the layers for the production of thin film solar cells directly onto the carrier substrate will be ⁇ introduced, which in turn with a front side For t strength transparent cover layer through a bonding adhesive sheet to a bewitt fürsstabilen photovoltaic or solar module is connected. This process is called "lamination".
  • low-iron soda-lime glass is selected for the material of the cover layer.
  • the adhesion-promoting adhesive film consists for example of ethylene vinyl acetate (EVA), polyvinyl butyral (PVB), polyethylene ⁇ (PE), Polyethylenacrylcopolymer or polyacrylamide (PA).
  • EVA ethylene vinyl acetate
  • PVB adhesive films have been increasingly used in recent years.
  • the object of the present invention is to provide a solar module with a reduced, due to aging power loss available.
  • a solar module in particular thin film solar module ⁇ shown.
  • the solar module comprises a laminated composite of two interconnected by at least one (plastic ⁇ ) adhesive layer substrates between which are preferably in an integrated form serially interconnected solar cells, in particular thin-film solar cells.
  • the solar cells arranged between the two sub strates are produced by structuring a layer structure.
  • the solar cells each have a ⁇ absorber zone from a semiconducting ⁇ the material which is located between an arranged on a light entering side of the absorber zone front electrode and a back electrode.
  • the semiconductor material consists of a chalcopyrite compound, which is in particular an I-III-VI semiconductor from the group copper indium / gallium Dischwefel / diselenide
  • Cu (In, Ga) (S, Se) 2 for example copper indium diselenide (CuInSe 2 or CIS) or related compounds.
  • the semiconductor material is usually fortified with Dotierstof ⁇ fionen, such as sodium ions.
  • a backsidige carrier substrate by means of an adhesive layer, in ⁇ example PVB, with a permeable for electromagnetic radiation in the absorption region of the semiconductor (eg sunlight) as possible permeable front side cover layer, for example glass plate, which are arranged on the support substrate
  • Solar cells are embedded ⁇ in the adhesive layer.
  • a diffusion ⁇ barrier barrier layer
  • the adhesive layer which is to bebil ⁇ det, the diffusion of water molecules from the adhesive layer in the absorber zone and / or the diffusion of Th ⁇ animal matter ions from the absorber zone in the adhesive layer to inhibit.
  • the material of the diffusion barrier is different from the Materi ⁇ al the front electrode.
  • the diffusion barrier has such a suitable layer thickness that the diffusion of water molecules and / or dopant ions can be inhibited.
  • the layer thickness depends on the respective material of the diffusion barrier.
  • the Applicant has thus recognized for the first time that the power loss observed in solar modules with aging is due to a change in the electrical properties of the semiconductor material of the solar cells due to the diffusive transport of water molecules and / or dopant ions. Due to the diffusion barriers between the adhesive layer and the absorber zones, advantageously a diffusive transport of water molecules and / or dopant ions can be prevented, at least largely, in particular completely, so that the associated with an aging performance loss of So ⁇ larmodulen can be reliably and safely reduced.
  • the material of the diffusion barriers should be chosen such that it is permeable (transparent) to electromagnetic radiation in the absorption region of the semiconductor material of the solar cells (eg sunlight).
  • the term "transmissive” here refers to a transmission for the considered wavelength range, ie the absorption range of the semiconductor (at CIGS 380 nm to 130 nm), wel ⁇ che at least greater than 70%, preferably greater than 80% and particularly preferably greater than 90% is.
  • the material and the layer thickness of the diffusion barriers of the solar cells can be freely selected in the solar module according to the invention, as long as it is ensured that the diffusion of water molecules and / or dopant ions can be inhibited and in particular at least approximately completely prevented.
  • This may generally be an organic or inorganic material.
  • CVD chemical vapor deposition
  • PVD Physical Vapor deposition
  • sputtering is possible.
  • organic materials typically a wet-chemical deposition ⁇ which is fraught difficult to integrate into the process flow for the production of solar modules and process engineering disadvantages.
  • the inorganic material of the diffusion barriers of the solar cells is at least one metal oxide.
  • the diffusion barriers each comprise an alternating sequence of at least one metal oxide layer and at least one metal nitride layer, for example an alternating sequence of at least one layer of tin-zinc oxide and at least one layer of silicon nitride.
  • the alternating sequence of the various materials which is always accompanied by a different grain growth, can be used to effectively prevent a diffusive transport of water molecules and dopant ions.
  • metal oxides and metal nitrides are characterized by a very good processability, which layers hie ⁇ out from the gas phase or be deposited by a sputtering process so that the production of the diffusion barrier ⁇ relatively simple and inexpensive integrated in the production of solar modules can be.
  • diffusion barriers have an excellent permeability to electromagnetic radiation (eg
  • the thickness of the diffusion barrier is to be Wegsichti ⁇ gen.
  • the layer thickness of a diffusion barrier of a metal oxide is more than 50 nm, in particular more than 100 nm.
  • the layer thickness of the diffusion ⁇ barrier in the range of more than 50 nm to 200 nm, in particular ⁇ sondere in the range above 100 nm to 200 nm.
  • Ver ⁇ seeking the Applicant with metal oxides can at least in some Materials with a further increase in the layer thickness beyond 100 nm practically no additional effect with respect to the effect as a barrier for the diffusive transport of water molecules and dopant ions can be achieved.
  • the layer thickness of the Diffu ⁇ sion barrier in the range of more than 50 nm to 100 nm, in particular in the range of more than 50 nm to below 100 nm, in particular in the range of 75 nm to 100 nm , in particular in the range of 75 nm to below 100 nm.
  • the diffusion barriers between the absorber zones and the adhesive layer.
  • the diffusion barriers are arranged for this purpose between the front electrodes and the absorber zones.
  • the diffusion barriers are arranged between the front electrodes and the adhesive layer.
  • the back electrodes are formed by forming first layer trenches in a back electrode layer, the absorber zones by forming second ones
  • Layer trenches for structuring the front electrodes is located, wherein the optically active regions of the solar module, ie the absorber zones are completely separated by the diffusion barriers of the adhesive layer.
  • no material of the diffusion barriers is located within the third layer trenches, ie the third layer trenches are free of the material of the diffusion barriers.
  • Such a solar module comprises a back ⁇ electrode layer with first layer trenches for forming the back electrodes, a semiconductor layer with second layer ⁇ trenches for forming the absorber zones, a front electrode layer with third layer trenches for forming the front electrodes, wherein the diffusion barriers of the solar cells outside the third layer trenches are located.
  • Layer trenches for forming the front electrodes can be deposited, for example, on the Fronelektroden slaughter.
  • it is possible to dispense with a further coating system for applying the barrier layer which involves a considerable cost saving in the production of the solar modules.
  • approved in the third layer trenches diffusive transport of water molecules and Do ⁇ animal hydrogen ions between the adhesive layer and the Absorberzo- NEN is negligible, so that virtually no increase occurs in the series resistance.
  • the invention further extends to a process for producing a solar module as described above, in particular thin-film solar module, comprising a step, can be arranged in which various of the front electrode Diffu ⁇ sion barrier between the absorbent zones and the adhesive layer.
  • a barrier layer for forming the diffusion barriers by chemical or physical vapor deposition or sputtering is produced, whereby a process technology simple and cost-effective integration of the production of diffusion barriers in the production of the solar module is made possible.
  • the diffusion barriers can each be produced as a single layer or by depositing a plurality of layers of at least two different materials.
  • the barrier layer for forming the diffusion barriers is produced by depositing at least one metal oxide layer.
  • the barrier layer is advantageously provides Herge ⁇ by Ab ⁇ excrete an alternating sequence of at least one metal oxide layer and at least a metal nitride layer.
  • the rear electrode by forming the first layer trenches in a back electrode layer, the absorber zones by from ⁇ second layer trenches formed in a semiconductor layer and the front electrode produced by forming the third layer trenches in a front electrode layer, wherein the serving for production of the diffusion barrier barrier layer on the For the preparation of the front electrodes serving front electrode layer is deposited.
  • the barrier layer it would also be possible for the barrier layer to be deposited on the front electrodes and the third layer trenches separating the front electrodes from one another.
  • the diffusion barriers located between the absorber zones of the solar cells and the adhesive layer can be separate layer sections, which can be formed, for example, by structuring the barrier layer are made. Equally, however, it is also possible that the diffusion barriers are layer sections of a continuous barrier layer.
  • the invention also extends to the use of a diffusion barrier as described above in a solar module as described above.
  • the solar module comprises a la ⁇ delaminated composite of two by at least one adhesive ⁇ layer substrates bonded together, between which are serially connected solar cell, each of which has an absorber region of a semiconducting material between a disposed on a light entering side of the absorber zone front electrode and a back electrode , wherein the diffusion barrier is different from the front electrode and is located between the absorber zone and the adhesive layer, wherein the diffusion barrier is adapted to the diffusion of water molecules from the adhesive layer into the absorber zone and / or the diffusion of dopant ions from the absorber zone into the To inhibit the adhesive layer.
  • the use according to the invention extends to all the above-described embodiments of the diffusion barrier as well as to all the above-described embodiments of the solar module, reference being made to avoid repetition to the relevant statements. Brief description of the drawings
  • FIG. 1 is a schematic illustration of an exemplary game at ⁇ thin film solar module.
  • FIGS. 2-3 are diagrams illustrating the effect of various diffusion barriers. Detailed description of the drawings
  • FIG. 1 a thin-film solar module, designated overall by the reference numeral 1, is diagrammatically illustrated.
  • the thin film solar module 1 comprises a multi ⁇ number of series-connected to each other in an integrated form thin film solar cells 2, wherein only two thin-film solar cells 2 are shown in Figure 1 for purposes of simplicity. It is understood that in larmodul Dünn Anlagenso- 1, a plurality (for example, about 100) ⁇ thin film solar cells are connected in series. 2
  • the thin film solar module 1 has a laminated glazing ⁇ structure, ie it has an electrically insulating rendes first (carrier) substrate 3 with a vapor it ⁇ applied layers structure 4 made of thin layers, which is disposed on a light-incident-side surface of the first substrate. 3
  • the layers 4 can ⁇ construction by vapor deposition, ie, chemical vapor deposition (CVD) or physical deposition (PVD) from the gas phase, or sputtering (magnefeidunterpractice Kathodenzerstäub- ung) are prepared.
  • the first substrate 3 is here at ⁇ example as rigid glass plate having a relatively clotting ⁇ gen light transmittance formed, alike other electrically insulating materials with the desired strength and inert behavior towards the fürge gleich- th process steps can be used.
  • each thin-film solar cell 2 has a surface on the light-entry side of the first substrate
  • a heterojunction ⁇ gear that is, a sequence of layers of the opposite conductivity type is formed.
  • the buffer zone 7 may cause electronic matching between the semiconductive material of the absorber zone 6 and the material of the front electrode 8.
  • a Dif ⁇ fusion barrier 9 is arranged on the front electrode 8, by which a diffusive transport of water molecules and dopant ions (eg, sodium ions) can be at least approximately completely, in particular completely, prevented.
  • the various layers of the layer structure 4 are patterned on the first substrate 3 using a suitable structuring technology such as laser writing and mechanical processing, for example lifting or scribing. What is important here is that the losses of the photoactive surface are as small as possible and that the structuring technology used is selective for the material to be removed.
  • a structuring typically comprises three structuring steps for each thin-film solar cell 2, which are abbreviated PI, P2, P3.
  • a back electrode layer 19 which consists of play of an opaque metal such as Mo ⁇ lybdenum (Mo) at ⁇ applied to the first substrate.
  • the back electrode layer 19 has a layer thickness which is, for example, in the range from 300 nm to 600 nm and in particular amounts to approximately 500 nm.
  • the back ⁇ electrode layer 19 is interrupted by generating first layer trenches 16, whereby the back electrodes 5 are formed.
  • the semiconductor layer 21 is made of with impurity ions (Me ⁇ tallionen) doped semiconductor whose bandgap is preferably able to absorb the greatest possible proportion of the sunlight.
  • the semiconductor layer 21 consists for example of a p-type chalcopyrite semiconductor, for example a compound of the group Cu (In, Ga) (S, Se) 2 , in particular sodium (Na) -doped
  • the semiconductor layer 21 has a
  • Layer thickness for example, in the range of 1-5 ym and is in particular about 2 ym.
  • Layer trenches 16 are filled during application of the semiconductor layer 21 by the semiconductor material. Then, a buffer layer 23 is deposited on the semiconductor layer 21.
  • the buffer layer 23 is here at ⁇ play, of a single layer of cadmium sulfide (CdS) and a single layer of intrinsic zinc oxide (i-ZnO), which is not shown in detail in FIG. 1
  • the two semiconducting layers namely the semiconductor layer 21 and the buffer layer 23, are interrupted by generating second layer trenches 17, whereby the semiconductor zones 6 and the buffer zones 7 are formed.
  • a front electrode layer 20 to the Puf ⁇ ferzonen 7 and the buffer regions 7 and the semiconductor zones 6 from each other, separating trenches second layer 17 is the istschie-.
  • the material of the front electrode layer 20 is 21 for example in the visible spectral region transparent to radiation in the absorption region of the semiconductor layer, so that the incident electromagnetic radiation 13 ge ⁇ is only weakens low.
  • the front electrode layer 20 is based, for example, on a doped metal oxide, for example n-type aluminum (Al) -doped zinc oxide (ZnO).
  • the layer thickness of the front electrode layer 20 of play is about 500 nm at ⁇ .
  • the second layer trenches 16 are filled when applying the front electrode layer 20 through the electrically conductive material of this layer.
  • a barrier layer 22 is deposited on the front electrode layer 20, for example by vapor deposition or sputtering.
  • the barrier layer 22 is preferably made of an inorganic material, in particular of at least one layer metal oxide, preferably an alternating sequence of metal oxide layers and Metallnit ⁇ rid layers, for example consisting of at least one tin-zinc oxide layer and at least one silicon nitride layer ,
  • the layer thickness of the barrier layer 22 is preferably above 50 nm and is, for example, in the range of more than 50 nm to 200 nm, in particular in the range of 75 nm to 100 nm, in particular in the range of 75 nm to below 100 nm.
  • the barrier layer 22 it would also be possible for the barrier layer 22 to be arranged between the front electrode layer 22 and the semiconductor layer 21.
  • P3 bar ⁇ centering layer 22 and the front electrode layer 20 is interrupted by generating third layer trenches 18, whereby the front electrode 8 and the diffusion barriers 9 are formed.
  • the third layer trenches 18 reach down to the first substrate 3.
  • RTP Rapid Thermal Processing
  • both the resulting positive voltage connection (+) and the re ⁇ sulting negative voltage connection (-) of the thin ⁇ layer solar module 1 are guided over the back electrodes 5 and contacted there electrically.
  • an electrical voltage is generated at the two voltage terminals.
  • a resulting current path 14 is illustrated by arrows in FIG.
  • the first substrate 3 with the applied thin-film solar cells 2 is adhesively bonded to a second substrate 11 to form a weather-resistant composite.
  • a (plastic) adhesive layer 10 which serves to encapsulate the layer structure 4 is applied to the front electrodes 8 and the third layer trenches 18 separating the front electrodes 8.
  • the third layer trenches 18 are filled in the application of the adhesive layer 10 by the insulating material of this layer.
  • the second substrate 11 is transparent as a front-side covering layer for the radiation 13 and, for example, in the form of a glass plate made of extra-white glass with a low iron content, whereby equally other electrically insulating materials with desired strength and inert behavior can be used in comparison with the process steps carried out.
  • the second substrate 11 serves for sealing and mechanical protection of the layer structure 4.
  • the thin-layer solar module 1 can be illuminated via a front-side module surface 15 in order to generate electrical energy.
  • the two substrates 3, 11 are connected by the adhesive layer 10 fixed with each other ( “laminated") / the adhesive ⁇ layer 10 is formed here, for example, as a thermoplastic adhesive ⁇ layer which is plastically deformable by heating and on cooling the two substrates 3 and 11 firmly connects.
  • the adhesive layer 10 here consists, for example, of PVB.
  • the two substrates 3, 11 with the thin-film solar cells 2 embedded in the adhesive layer 10 jointly form a laminated composite 12.
  • adhesive layer 10 of water is present with a weight fraction digit Pro ⁇ mille area. Due to the diffusion barriers 9, a diffusive transport of water molecules from the adhesive layer 10 into the absorber zones 6 can be at least largely prevented.
  • the absorber zones 6 consist of a p-type chalcopyrite semiconductor, in this case, for example, sodium (Na) -doped Cu (In, Ga) (S, Se) 2 .
  • the thin-film solar module 1 was subjected to accelerated aging by heating in a dry environment to about 85 ° C.
  • Measurement curve (1) a diffusion barrier of SnZnO with a layer thickness of 50 nm (50SnZnO)
  • Measurement curve (2) a diffusion barrier of SiN with a layer thickness of 50 nm (50SiN)
  • Measurement curve (3) a diffusion barrier of SiN with a layer thickness of 100 nm (10 OOSiN)
  • Measurement curve (4) a diffusion barrier of an SnZnO layer with a layer thickness of 50 nm and a SiN layer with a layer thickness of 50 nm (50 + 50)
  • Measurement curve (5) a diffusion barrier of SnZnO with a layer thickness of 200 nm (200SnZnO)
  • Measurement curve (6) a diffusion barrier of SnZnO with a layer thickness of 100 nm (100SnZnO)
  • Measurement curve (7) a diffusion barrier of four layers, SnZnO layers and SiN layers being arranged in alternating sequence and the layers each having a layer thickness of 25 nm (4 * 25)
  • the measuring points of the measuring curves (1) to (3) are relatively close together and at least do not differ significantly from the measuring points of the reference measuring curve (0). It follows that 50 nm thick diffusion barriers SnZnO essentially have no effect with respect to reducing the increase of the series resistance of the thin film solar module ⁇ . 1 The same applies to 50 nm thick diffusion barriers made of SiN and for 100 nm thick diffusion barriers made of SiN.
  • the series resistance only increases to about 2 to 2.5 times its initial value when starting the thin-film solar module 1, so that an approximately 50% reduction in the increase in series resistance can be achieved by such diffusion barriers.
  • the reason for this is assumed to be an inhibition of the diffusive transport of water molecules and sodium ions through the diffusion barriers of the solar cells.
  • Layer thickness of 100 nm and 200 nm a good diffusion-inhibiting effect can be achieved, with respect to a layer thickness of 100 nm or 200 nm, virtually no difference is more recognizable. A correspondingly good effect is also evident for those diffusion barriers in which SnZnO and SiN are contained in combination, with a Total layer thickness of 100 nm of the diffusion barriers a 50 nm thick SnZnO layer or two 25 nm thick SnZnO layers are sufficient to achieve a good diffusion-inhibiting effect.
  • a particularly good diffusion-inhibiting effect can be achieved.
  • the present invention provides a solar module, in particular thin-film solar module, and a method for the production thereof, in which a reduction of the aging-related power loss can be achieved by diffusion barriers for water molecules and dopant ions between the absorber zones of the solar cells and the adhesive layer.
  • the production of the diffusion barriers can be integrated into the industrial mass production of solar modules in a simple and cost-effective manner.

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module solaire muni d'un corps composite laminé, formé de deux substrats, qui sont assemblés l'un à l'autre par au moins une couche adhésive et entre lesquels sont disposées des cellules solaires connectées en série. Ces dernières comportent chacune une zone d'absorption en un matériau semi-conducteur entre une électrode frontale, disposée sur un côté d'injection de la lumière de la zone d'absorption, et une électrode postérieure. Une barrière anti-diffusion, différente de l'électrode frontale, est disposée entre respectivement une zone d'absorption et la couche adhésive, ladite barrière anti-diffusion étant réalisée pour empêcher la diffusion des molécules d'eau hors de la couche adhésive (10) vers la zone d'absorption et/ou la diffusion des ions d'agents dopants hors de la zone d'absorption vers la couche adhésive. L'invention concerne en outre un procédé de fabrication d'un tel module solaire.
EP12750550.1A 2011-08-10 2012-08-01 Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire Withdrawn EP2742533A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP12750550.1A EP2742533A2 (fr) 2011-08-10 2012-08-01 Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11177057 2011-08-10
EP12750550.1A EP2742533A2 (fr) 2011-08-10 2012-08-01 Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire
PCT/EP2012/064998 WO2013020864A2 (fr) 2011-08-10 2012-08-01 Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire

Publications (1)

Publication Number Publication Date
EP2742533A2 true EP2742533A2 (fr) 2014-06-18

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EP12750550.1A Withdrawn EP2742533A2 (fr) 2011-08-10 2012-08-01 Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire

Country Status (6)

Country Link
US (1) US20140305492A1 (fr)
EP (1) EP2742533A2 (fr)
JP (1) JP2014525150A (fr)
KR (1) KR20140047113A (fr)
CN (1) CN103718307A (fr)
WO (1) WO2013020864A2 (fr)

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KR20150102180A (ko) * 2014-02-27 2015-09-07 삼성디스플레이 주식회사 레이저 빔 조사 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
AU2015331430A1 (en) * 2014-10-14 2017-04-20 Sekisui Chemical Co., Ltd. Solar cell
CN111448671A (zh) * 2017-09-29 2020-07-24 中建材蚌埠玻璃工业设计研究院有限公司 半透明薄膜太阳能模块
JP2020535653A (ja) * 2017-09-29 2020-12-03 （シーエヌビーエム）ボンブー デザイン アンド リサーチ インスティテュート フォー グラス インダストリー カンパニー，リミティド 半透明薄膜ソーラーモジュール
US11837675B2 (en) 2017-09-29 2023-12-05 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Semitransparent thin-film solar module

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US20090159119A1 (en) * 2007-03-28 2009-06-25 Basol Bulent M Technique and apparatus for manufacturing flexible and moisture resistive photovoltaic modules
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FR2932009B1 (fr) * 2008-06-02 2010-09-17 Saint Gobain Cellule photovoltaique et substrat de cellule photovoltaique
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KR101607364B1 (ko) * 2009-12-18 2016-03-29 도판 인사츠 가부시키가이샤 반사 방지 필름

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See references of WO2013020864A2 *

Also Published As

Publication number Publication date
WO2013020864A2 (fr) 2013-02-14
KR20140047113A (ko) 2014-04-21
CN103718307A (zh) 2014-04-09
US20140305492A1 (en) 2014-10-16
WO2013020864A3 (fr) 2013-05-10
JP2014525150A (ja) 2014-09-25

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