JP2013501382A - バリアがコートされた薄膜光電池 - Google Patents

バリアがコートされた薄膜光電池 Download PDF

Info

Publication number
JP2013501382A
JP2013501382A JP2012523935A JP2012523935A JP2013501382A JP 2013501382 A JP2013501382 A JP 2013501382A JP 2012523935 A JP2012523935 A JP 2012523935A JP 2012523935 A JP2012523935 A JP 2012523935A JP 2013501382 A JP2013501382 A JP 2013501382A
Authority
JP
Japan
Prior art keywords
layer
thin film
ald
substrate
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012523935A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013501382A5 (fr
Inventor
ピーター・フランシス・カルシア
ロバート・スコット・マクレーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2013501382A publication Critical patent/JP2013501382A/ja
Publication of JP2013501382A5 publication Critical patent/JP2013501382A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2012523935A 2009-08-05 2010-08-05 バリアがコートされた薄膜光電池 Pending JP2013501382A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23149309P 2009-08-05 2009-08-05
US61/231,493 2009-08-05
PCT/US2010/044483 WO2011017479A2 (fr) 2009-08-05 2010-08-05 Cellules photovoltaïques à couches minces à revêtement protecteur

Publications (2)

Publication Number Publication Date
JP2013501382A true JP2013501382A (ja) 2013-01-10
JP2013501382A5 JP2013501382A5 (fr) 2013-09-12

Family

ID=43544933

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012523935A Pending JP2013501382A (ja) 2009-08-05 2010-08-05 バリアがコートされた薄膜光電池

Country Status (5)

Country Link
EP (1) EP2462626A4 (fr)
JP (1) JP2013501382A (fr)
KR (1) KR20120055588A (fr)
CN (1) CN102696116A (fr)
WO (1) WO2011017479A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013504866A (ja) * 2009-09-14 2013-02-07 ベネク・オサケユキテュア 多層コーティング、多層コーティングの製造方法及び多層コーティングの使用
KR101886832B1 (ko) * 2017-11-20 2018-08-08 충남대학교산학협력단 전하 선택 접합 실리콘 태양 전지 제조 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013020864A2 (fr) * 2011-08-10 2013-02-14 Saint-Gobain Glass France Module solaire avec perte de puissance réduite et procédé de fabrication dudit module solaire
CN104995716B (zh) * 2012-12-31 2018-05-11 美国圣戈班性能塑料公司 柔性基材上的薄膜氮化硅阻挡层
EP2954562A2 (fr) 2013-02-07 2015-12-16 First Solar, Inc Dispositif photovoltaïque à couche protectrice sur une couche de fenêtre et procédé de fabrication associé
CN105161623B (zh) * 2015-08-07 2018-06-08 常州大学 一种钙钛矿太阳能电池及其制备方法
US20200230643A1 (en) * 2017-07-27 2020-07-23 Evatec Ag Permeation-barrier
CN112526663A (zh) * 2020-11-04 2021-03-19 浙江大学 一种基于原子层沉积的吸收膜及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140414A (ja) * 2004-11-15 2006-06-01 Matsushita Electric Ind Co Ltd 太陽電池用基板及びこれを用いた太陽電池
US20070295386A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a hybrid organic/inorganic protective layer
JP2008130647A (ja) * 2006-11-17 2008-06-05 Toppan Printing Co Ltd 太陽電池モジュール用のバックシート及び該バックシートを用いた太陽電池モジュール
JP2009043967A (ja) * 2007-08-09 2009-02-26 Toppan Printing Co Ltd 太陽電池用裏面保護シート及びこれを用いた太陽電池モジュール

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081789A2 (fr) * 2004-02-19 2005-09-09 Nanosolar, Inc. Formation de materiaux à couches absorbantes de cigs faisant intervenir un depot de couche atomique et un traitement de surface a haut debit
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US8344238B2 (en) 2005-07-19 2013-01-01 Solyndra Llc Self-cleaning protective coatings for use with photovoltaic cells
US20090159119A1 (en) * 2007-03-28 2009-06-25 Basol Bulent M Technique and apparatus for manufacturing flexible and moisture resistive photovoltaic modules
US7959742B2 (en) 2007-07-11 2011-06-14 Whirlpool Corporation Outer support body for a drawer-type dishwasher

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006140414A (ja) * 2004-11-15 2006-06-01 Matsushita Electric Ind Co Ltd 太陽電池用基板及びこれを用いた太陽電池
US20070295386A1 (en) * 2006-05-05 2007-12-27 Nanosolar, Inc. Individually encapsulated solar cells and solar cell strings having a hybrid organic/inorganic protective layer
JP2008130647A (ja) * 2006-11-17 2008-06-05 Toppan Printing Co Ltd 太陽電池モジュール用のバックシート及び該バックシートを用いた太陽電池モジュール
JP2009043967A (ja) * 2007-08-09 2009-02-26 Toppan Printing Co Ltd 太陽電池用裏面保護シート及びこれを用いた太陽電池モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013504866A (ja) * 2009-09-14 2013-02-07 ベネク・オサケユキテュア 多層コーティング、多層コーティングの製造方法及び多層コーティングの使用
KR101886832B1 (ko) * 2017-11-20 2018-08-08 충남대학교산학협력단 전하 선택 접합 실리콘 태양 전지 제조 방법

Also Published As

Publication number Publication date
EP2462626A4 (fr) 2013-10-16
CN102696116A (zh) 2012-09-26
EP2462626A2 (fr) 2012-06-13
WO2011017479A3 (fr) 2011-06-16
WO2011017479A2 (fr) 2011-02-10
KR20120055588A (ko) 2012-05-31

Similar Documents

Publication Publication Date Title
US20120145240A1 (en) Barrier films for thin-film photovoltaic cells
US9087955B1 (en) Humidity control and method for thin film photovoltaic materials
Carcia et al. Encapsulation of Cu (InGa) Se2 solar cell with Al2O3 thin-film moisture barrier grown by atomic layer deposition
US8981200B2 (en) Method for obtaining high performance thin film devices deposited on highly textured substrates
JP2013501382A (ja) バリアがコートされた薄膜光電池
JP2013502745A5 (fr)
EP1836733A1 (fr) Couches d'absorbeur optique pour pile solaire et procede de fabrication de ces couches
US20110023959A1 (en) Photovoltaic Cell Substrate And Method Of Manufacturing The Same
EP2680320A1 (fr) Module de cellules solaires en couches minces et son procédé de fabrication
KR20140018808A (ko) 박막 태양전지 모듈 및 이의 제조방법
US8497151B2 (en) Photovoltaic device
KR101219835B1 (ko) 태양전지 및 이의 제조방법
US20090272428A1 (en) Insulating Glass Unit with Integrated Mini-Junction Device
KR101081300B1 (ko) 태양전지 및 이의 제조방법
KR101210110B1 (ko) 태양전지 및 이의 제조방법
KR101039993B1 (ko) 태양전지 및 이의 제조방법
KR101971398B1 (ko) 양면수광형 CdS/CdTe 박막태양전지 및 그 제조방법
RU2569164C2 (ru) Тонкопленочный солнечный элемент
KR101436539B1 (ko) 박막형 태양전지 및 그 제조방법
KR101103914B1 (ko) 태양전지 및 이의 제조방법
KR101349596B1 (ko) 태양전지 및 이의 제조방법
Wada et al. Fabrication of CdS/CdTe solar cells with transparent p-type conductive SrCuSeF back contact
Krimmel et al. Application of Silicon Nitride for Solar Cells
JP2002299664A (ja) 光電変換装置およびその製造方法
KR20120049504A (ko) 적층형 박막 태양전지 및 그의 제조방법

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130730

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130730

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140107

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140404

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140411

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140707

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140729