CN102696096A - 化合物半导体晶片的加工方法以及加工装置 - Google Patents

化合物半导体晶片的加工方法以及加工装置 Download PDF

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Publication number
CN102696096A
CN102696096A CN2010800606149A CN201080060614A CN102696096A CN 102696096 A CN102696096 A CN 102696096A CN 2010800606149 A CN2010800606149 A CN 2010800606149A CN 201080060614 A CN201080060614 A CN 201080060614A CN 102696096 A CN102696096 A CN 102696096A
Authority
CN
China
Prior art keywords
semiconductor wafer
compound semiconductor
mentioned
wafer
mounting plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800606149A
Other languages
English (en)
Chinese (zh)
Inventor
目崎义雄
山崎哲弥
西浦隆幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN102696096A publication Critical patent/CN102696096A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2010800606149A 2010-01-05 2010-12-16 化合物半导体晶片的加工方法以及加工装置 Pending CN102696096A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010000395 2010-01-05
JP2010-000395 2010-01-05
PCT/JP2010/072602 WO2011083667A1 (ja) 2010-01-05 2010-12-16 化合物半導体ウェハの加工方法及び加工装置

Publications (1)

Publication Number Publication Date
CN102696096A true CN102696096A (zh) 2012-09-26

Family

ID=44305404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800606149A Pending CN102696096A (zh) 2010-01-05 2010-12-16 化合物半导体晶片的加工方法以及加工装置

Country Status (4)

Country Link
JP (1) JPWO2011083667A1 (ja)
CN (1) CN102696096A (ja)
TW (1) TW201135822A (ja)
WO (1) WO2011083667A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08216034A (ja) * 1995-02-14 1996-08-27 Furukawa Electric Co Ltd:The 研磨材とそれを用いた研磨方法
JP2001244221A (ja) * 2000-02-03 2001-09-07 Wacker Siltronic G Fuer Halbleitermaterialien Ag 半導体ウェハの製造方法およびこの種の半導体ウェハ
EP1150339A1 (en) * 1999-11-08 2001-10-31 Nikko Materials Company, Limited Compound semiconductor wafer
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
CN1610069A (zh) * 2003-05-15 2005-04-27 硅电子股份公司 抛光半导体晶片的方法
JP2005150216A (ja) * 2003-11-12 2005-06-09 Hitachi Cable Ltd 半導体ウェハの研磨装置
CN1650404A (zh) * 2002-04-30 2005-08-03 信越半导体株式会社 半导体晶片的制造方法及晶片

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08216034A (ja) * 1995-02-14 1996-08-27 Furukawa Electric Co Ltd:The 研磨材とそれを用いた研磨方法
EP1150339A1 (en) * 1999-11-08 2001-10-31 Nikko Materials Company, Limited Compound semiconductor wafer
JP2001244221A (ja) * 2000-02-03 2001-09-07 Wacker Siltronic G Fuer Halbleitermaterialien Ag 半導体ウェハの製造方法およびこの種の半導体ウェハ
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
CN1650404A (zh) * 2002-04-30 2005-08-03 信越半导体株式会社 半导体晶片的制造方法及晶片
CN1610069A (zh) * 2003-05-15 2005-04-27 硅电子股份公司 抛光半导体晶片的方法
JP2005150216A (ja) * 2003-11-12 2005-06-09 Hitachi Cable Ltd 半導体ウェハの研磨装置

Also Published As

Publication number Publication date
JPWO2011083667A1 (ja) 2013-05-13
WO2011083667A1 (ja) 2011-07-14
TW201135822A (en) 2011-10-16

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Application publication date: 20120926