CN102693998A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting element Download PDFInfo
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- CN102693998A CN102693998A CN2011103068290A CN201110306829A CN102693998A CN 102693998 A CN102693998 A CN 102693998A CN 2011103068290 A CN2011103068290 A CN 2011103068290A CN 201110306829 A CN201110306829 A CN 201110306829A CN 102693998 A CN102693998 A CN 102693998A
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- light emitting
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Abstract
The invention provides a semiconductor light emitting element, wherein a plurality of light emitting portions are arranged on a single substrate, and the light extraction efficiency is increased. The semiconductor light emitting element possesses the components as following: a light emitting portion, wherein a semiconductor overlapped structure is provided on a substrate, and the semiconductor overlapped structure comprises a light emitting light arranged between a first conductive layer and a second conductive layer; a light emitting portion which possesses different zones arranged on the substrated and separated from the light emitting portion and a semiconductor overlapped structure arranged between the first conductive layer and the second conductive layer; an internal wiring layer which electrically connects the first conductive layer with the second conductive layer; and a reflective layer which is arranged at the light emitting layer of the light emitting portion and between any light emitting layer and the internal wiring layer, at least part of the light from the light emitting layer of the light emitting portion is reflected.
Description
Technical field
The present invention relates to semiconductor light-emitting elements.
Background technology
In the past, as semiconductor light-emitting elements, the known semiconductor light-emitting elements (for example with reference to patent documentation 1) that has a plurality of illuminating parts that on single substrate, will be two-dimensional arrangements to be electrically connected through internal wiring.
In the semiconductor light-emitting elements of patent documentation 1; A plurality of semiconductor multilayers are configured on the single substrate separated and be two-dimensional arrangements; And electrode etc. is set and constitutes a plurality of illuminating parts in that these semiconductor multilayers are textural; And an electrode of each illuminating part of a plurality of illuminating parts is electrically connected through the internal wiring that forms with semiconductor technology with another electrode of other illuminating part, therefore need not all a plurality of illuminating parts are carried out bonding, can reduce the process number of wiring.
Patent documentation 1: Japan special table 2010-521807 communique
But; There is following problems in the semiconductor light-emitting elements of patent documentation 1 record: when using metals such as the good Au of conductance, Ti, Ni as internal wiring; Because internal wiring absorbs the light that sends from the luminescent layer of semiconductor multilayer structure, so light taking-up efficient is low; In addition, if use metals such as the high Al of reflectivity, Ag as internal wiring, owing to produce migration, the electrical characteristic of light-emitting component is impaired.
Summary of the invention
Thus, the objective of the invention is to: single substrate is provided with in the semiconductor light-emitting elements of a plurality of illuminating parts, compares with the situation of not using this formation and improves light taking-up efficient.
The present invention is in order to reach above-mentioned purpose; A kind of semiconductor light-emitting elements is provided; It possesses: the 1st illuminating part; It is arranged on the substrate, and has semiconductor multilayer structure, and this semiconductor multilayer structure comprises the luminescent layer between the 2nd conductive type layer of the 1st conductive type layer that is folded in the 1st conduction type and the 2nd conduction type; The 2nd illuminating part; It is arranged in the zones of different that leaves with said the 1st luminous component on the said substrate; And have semiconductor multilayer structure, this semiconductor multilayer structure comprises the luminescent layer between the 2nd conductive type layer of the 1st conductive type layer that is folded in said the 1st conduction type and said the 2nd conduction type; Wiring layer, its said the 1st conductive type layer with said the 1st illuminating part is electrically connected with said the 2nd conductive type layer of said the 2nd illuminating part; And reflector; It is arranged between any at least luminescent layer and said wiring layer in the said luminescent layer of said luminescent layer and said the 2nd illuminating part of said the 1st illuminating part, at least a portion of the light that reflection is sent from said any at least luminescent layer.
Preferably, than said wiring floor height, and said reflector is formed in the insulating barrier to the reflection of light rate sent from said luminescent layer in said reflector, so that this reflector does not contact with said wiring layer, said the 1st conductive type layer and said the 2nd conductive type layer.
Preferably, said the 1st illuminating part has: transparency electrode, itself and said the 1st conductive type layer ohmic contact; Insulating barrier, it is formed on the said transparency electrode; With the 1st electrode, it connects said insulating barrier, and with said transparency electrode ohmic contact; Said the 2nd illuminating part has: insulating barrier, and it is formed on said the 2nd conductive type layer; With the 2nd electrode, it connects said insulating barrier, and with said the 2nd conductive type layer ohmic contact; Said wiring layer is electrically connected said the 1st electrode with said the 2nd electrode; Said reflector is formed in the said insulating barrier with the shape corresponding shape with said wiring layer, thereby this reflector is not contacted with said the 1st electrode, said the 2nd electrode and said transparency electrode.
Preferably; Said the 1st electrode of said the 1st illuminating part comprises wire the 1st extension that extends from the connecting portion of itself and said wiring layer; Said the 2nd electrode of said the 2nd illuminating part comprises wire the 2nd extension that extends from the connecting portion of itself and said wiring layer, and said reflecting part also is formed on the below of said the 1st extension and said the 2nd extension with the shape corresponding shape with said extension.
According to the present invention, single substrate is provided with in the semiconductor light-emitting elements of a plurality of illuminating parts, compares with the situation of not using this formation and can improve light taking-up efficient.
Description of drawings
Fig. 1 is the generalized section of semiconductor light-emitting elements.
Fig. 2 is the generalized section of having amplified the part of semiconductor light-emitting elements.
Fig. 3 is the diagrammatic top view that shows the semiconductor light-emitting elements of embodiment of the present invention.
The explanation of Reference numeral
1: light-emitting component; 1A: illuminating part; 1B: illuminating part;
10: substrate; 20: resilient coating; 21: the semiconductor multilayer structure;
22:n type contact layer; 23:n type ESD layer; 24:n type cover layer;
25: luminescent layer (mqw layer); 26:P type cover layer; 27:p type contact layer;
30: transparency electrode; 40: insulating barrier; 50: downside p electrode;
60: downside n electrode; 70: upside p electrode; 80: upside n electrode;
83: the internal wiring layer; 90,92,93,94,96: the reflector;
700,720,800,820: extension
Embodiment
Fig. 1～Fig. 3 shows execution mode of the present invention, and Fig. 1 is the generalized section of semiconductor device, and Fig. 2 is the generalized section of having amplified the part of semiconductor light-emitting elements.In addition, Fig. 3 is the diagrammatic top view of semiconductor light-emitting elements.
(formation of light-emitting component)
Shown in Fig. 1～3, this light-emitting component 1 has two illuminating part 1A and 1B on substrates such as sapphire 10, and the electrode of an illuminating part 1A and 1B side separately is connected in series through internal wiring layer 83 each other.In addition, light-emitting component 1 also can in series be provided with the illuminating part more than three.
(formation of light-emitting component)
(semiconductor multilayer structure)
Illuminating part 1A and 1B possess the resilient coating 20 and semiconductor multilayer structure 21 that is arranged on the substrate 10; This semiconductor multilayer structure 21 comprises: be arranged on n type contact layer 22 on the resilient coating 20, be arranged on n type static discharge (Electro Static Discharge is called for short ESD) layer 23 on the n type contact layer 22, be formed on n type cover layer 24 on the n type ESD layer 23, as the mqw layer 25 that is arranged on the luminescent layer on the n type cover layer 24, be arranged on the p type cover layer 26 on the luminescent layer 25 and be arranged on the p type contact layer 27 on the p type cover layer 26.In addition, remove from the part of p type contact layer 27 to n type contact layers 22, thereby expose the part of n type contact layer 22 through etching.
Here, resilient coating 20, n type contact layer 22, n type ESD layer 23, n type cover layer 24, luminescent layer 25, p type cover layer 26 and p type contact layer 27 are respectively the layers that is made up of the III-th family nitride compound semiconductor.But III-th family nitride compound semiconductor for example utilization structure is Al
xGa
yIn
1-x-yThe III group-III nitride compound semiconductor of the quaternary system of N (and, 0≤x≤1,0≤y≤1,0≤x+y≤1).
In this execution mode, resilient coating 20 is formed by AlN.And, n type contact layer 22, n type ESD layer 23 and n type cover layer 24 respectively by each autodoping the n-GaN of n type dopant (for example Si) of ormal weight form.In addition, luminescent layer 25 has MQW structure, and this MQW structure comprises a plurality of trap layers and a plurality of barrier layer and forms.The trap layer is for example formed by GaN, | barrier layer is for example formed by InGaN or AlGaN etc.In addition, p type cover layer 26 and p type contact layer 27 are formed by the p-GaN of the p type dopant (for example Mg) of the ormal weight that mixed respectively.
Can be from each layer that is arranged on resilient coating 20 to the p type contact layers 27 on the substrate 10 through for example Metalorganic chemical vapor deposition method (Metal Organic Chemical Vapor Deposition; Abbreviation MOCVD), molecular beam epitaxy (Molecular Beam Epitaxy; Be called for short MBE), halide vapour phase epitaxy method methods such as (Halide Vapor Phase Epitaxy are called for short HVPE) and forming., takeed the example that resilient coating 20 is formed by AlN here, but resilient coating 20 can form by enough GaN also.In addition, the SQW of luminescent layer 25 structure also can not be the MQW structure, and adopts single SQW structure, strained quantum well structure.
(electrode)
In addition, illuminating part 1A and 1B possess transparency electrode 30 and insulating barrier 40, and this transparency electrode 30 is arranged on the p type contact layer 27, insulating barrier 40 be formed on the transparency electrode 30 and semiconductor multilayer textural.Further, illuminating part 1A and 1B possess: downside p electrode 50, it connects insulating barrier 40, and with transparency electrode 30 ohmic contact; With downside n electrode 60, it connects insulating barrier 40, and with n type contact layer 22 ohmic contact.
In this execution mode, use SiO as insulating barrier 40
2In addition, also can use other material as insulating barrier 40, for example except SiN, also can be by TiO
2, Al
2O
3, Ta
2O
5The resin material that has electrical insulating property Deng metal oxide or polyimides etc. forms.Insulating barrier 40 for example forms through vacuum vapour deposition, forms but also can pass through chemical vapour deposition technique (Ch emical Vapor Deposition is called for short CVD).In order to form downside p electrode 50 and downside n electrode 60, use photoetching technique and etching technique to remove the part of transparency electrode 30 upsides in the insulating barrier 40 and the part of n type contact layer 22 upsides.
Downside p electrode 50 comprises the 1st metal level 52 that contacts with transparency electrode 30 and is formed on the 2nd metal level 54 on the 1st metal level 52.The 1st metal level 52 is made up of with the metal of ITO ohmic contact for example Ni, Rh, Ti, Cr etc.In this execution mode, use Ni as the 1st metal level 52 respectively, use Au as the 2nd metal level 54.In addition, downside n electrode 60 comprises the 1st metal level 62 that contacts with n type contact layer 22 and is formed on the 2nd metal level 64 on the 1st metal level 62.The 2nd metal level 62 is made up of with the metal of n type contact layer 22 ohmic contact for example Ni, Rh, Ti, V, Pt, Cr etc.In this execution mode, the 1st metal level 62 and the 2nd metal level 64 use the 1st metal level 52 and the 2nd metal level 54 identical materials with downside p electrode 50.
Downside p electrode 50 and downside n electrode 60 for example use vacuum vapour deposition to form.In this execution mode, the material that constitutes downside p electrode 50 is same material with the material that constitutes downside n electrode 60, forms each electrode 50,60 through simultaneously electrode material being carried out vacuum evaporation.In addition, also can use different materials to form at downside p electrode 50 and downside n electrode 60, in this case, be not to form simultaneously, but will form respectively.In addition, also can form downside p electrode 50 and downside n electrode 60 through sputtering method.
In addition, illuminating part 1B possesses upside p electrode 70, and this upside p electrode 70 is formed on the insulating barrier 40, and with downside p electrode 50 ohmic contact.When overlooking, upside p electrode 70 forms greatly than downside p electrode 50.Upside P electrode 70 contacts with insulating barrier 40 and downside p electrode 50, when encapsulation, is connected with bonding wire (not shown).As upside p electrode 70, selection is suitable for the metal with the bonding wire bonding.In this execution mode, use Au as upside p electrode 70.In addition, upside p electrode 70 also can form Ti or Ni by comprising as the alloy of principal component.
In addition, illuminating part 1A possesses upside n electrode 80, and this upside n electrode 80 is formed on the insulating barrier 40, and with downside n electrode 60 ohmic contact.When overlooking, upside n electrode 80 forms greatly than downside n electrode 60.Upside n electrode 80 contacts with insulating barrier 40 and downside n electrode 60, when encapsulation, is connected with bonding wire (not shown).As upside n electrode 80, selection is suitable for the metal with the bonding wire bonding.In this execution mode, upside n electrode 80 uses and upside p electrode 70 identical materials.
When overlooking, the extension 700 of the upside p electrode 70 of illuminating part 1B and the extension 720 of illuminating part 1A extend along the limit portion of illuminating part 1B and 1A respectively.In addition, when overlooking, the extension 800 of the upside n electrode 80 of illuminating part 1A and the extension 820 of illuminating part 1B extend along the direction that the mediad of illuminating part 1A and 1B is stipulated respectively, are extended portion 720 and 700 respectively and surround.A plurality of downside n electrodes 60 are connected with extension 800 and 820, and a plurality of downside p electrodes 50 are connected with extension 700 and 720, make electric current to spread efficiently.
In addition, extension 720 forms as one through internal wiring layer 83 with extension 820, thereby illuminating part 1A and 1B electrically are connected in series.
(reflector)
In addition, illuminating part 1A and 1B have the reflection of light layer 90,92,93,94 and 96 that reflection is sent from mqw layer 25.
High metal such as the formation such as Al, Ag of reflectivity are used in reflector 90,92,93,94 and 96 in insulating barrier 40; It is not contacted with following conductive component, and this conductive component is respectively transparency electrode 30, downside p electrode 50, downside n electrode 60, upside p electrode 70, upside n electrode 80, extension 700,720,800,820 and internal wiring layer 83 etc.Generally, be prone to take place electromigratory more in the metal that reflectivity is high.Therefore, in the time of on the parts that the metal that reflectivity is high is used for being connected with other conductive component, can produce the problem that the material chosen scope narrows down.But; The reflector 90,92,93,94 and 96 of this execution mode is insulated 40 covering of layer comprehensively; And do not contact with other conductive component, even therefore taking place under the electromigratory situation, can not damage the danger of the electrical characteristic of illuminating part 1A and 1B yet.Therefore, reflector 90,92,93,94 and 96 material range of choice are wideer than the material range of choice of other conductive component etc.That is to say,, can widen the material range of choice of the reflecting part of high reflectance with light that luminescent layer 25 is sent through using reflector 90,92,93,94 and 96.
It is in order to reflect from the direction light of luminescent layer 25 directive conductive components that reflector 90,92,93,94 and 96 forms shape corresponding shape with conductive component, and the light of other direction of directive is directly penetrated to the outside.
For example, the zone in the reflector 93 of internal wiring layer 83 below is preferably and has the wire zone of trying one's best close width and forming along the length direction of internal wiring layer 83 with the width of internal wiring layer 83.The center line of the length direction in the wire in this reflector 93 zone be positioned at internal wiring layer 83 under the zone.
(other formation)
In addition, under the situation that the 2nd metal level 54 of downside p electrode 50 is made up of the material that can contact with transparency electrode 30 effectively, the formation that can omit the 1st metal level 52.In addition, under the situation that the 2nd metal level 64 of downside n electrode 60 is made up of the material that can contact with n type contact layer 22 effectively, the formation that can omit the 1st metal level 62.In addition, though do not illustrate especially, can also between downside p electrode 50 and upside p electrode 70, form the barrier layer.
In addition, when overlooking, light-emitting component 1 roughly forms rectangular shape.The planar dimension of light-emitting component 1, for example longitudinal size and lateral dimension are about 350 μ m and 1000 μ m respectively.In this execution mode, upside p electrode 70 and upside n electrode 80 are configured in the right-hand member of illuminating part 1B and the left end of illuminating part 1A respectively.
(action effect)
In the light-emitting component 1 that constitutes as described above, bonding wire is connected with upside p electrode 70 and upside n electrode 80.And, when upside p electrode 70 and upside n electrode 80 apply forward voltage, send the light of blue light wavelength scope from the luminescent layer 25 of illuminating part 1A and 1B.For example, each illuminating part 1A and 1B are about 3V at forward voltage respectively, and forward current is under the situation of 20mA, and sending peak wavelength is the light about 455nm.
Among the light that sends from luminescent layer 25, be absorbed often to the light of inner wiring layer 83 incidents.But, according to the illuminating part 1A and the 1B of this execution mode, be formed on 93 reflections in reflector of the high reflectance on the insulating barrier 40, can't arrive the more internal wiring layer 83 of extinction.
So; With high conductive internal wiring layer 83 clip internal wiring layer 83 the below insulating barrier 40 and formed the high reflector 93 of reflectivity individually; So can reduce the absorbing amount in the internal wiring layer 83; And light is reflected efficiently, can improve the light taking-up amount of coming self-emission device 1.
In addition, likewise,, can't arrive upside p electrode 70 and extension 700 to 92 reflection of layer that are reflected of the major part of the light of the direction incident of upside p electrode 70 and extension 700.In addition, to 90,92 reflection of layer that are reflected of the major part of the light of the direction incident of upside n electrode 80, extension 800, extension 720 and 820.
In addition, the light to 50 incidents of downside p electrode is absorbed by the 1st metal level 52 with transparency electrode 30 ohmic contact morely.But, among the illuminating part 1A and 1B according to this execution mode, because downside p electrode 50 forms for a short time than the upside p electrode 70 with the required area of lead-in wire bonding, so become fewer to the amount of incident of the 1st metal level 52.
More than; Execution mode of the present invention has been described, but the execution mode of above-mentioned record is not to be used to limit the related invention of claims, in addition; It should be noted that the whole of the necessary characteristics combination that is not limited only to explain of the means of the problem that is used for solving invention at execution mode.
For example, in above-mentioned each execution mode, also can be conversely with the n type layer of semiconductor multilayer structure and p type layer.That is to say; Can substitute the n type semiconductor layer that constitutes by n type contact layer 22, n type ESD layer 23 and n type cover layer 24 and form the p type semiconductor layer, substitute the p type semiconductor layer that constitutes by p type cover layer 26 and p type contact layer 27 and form the n type semiconductor layer.
In addition, in this execution mode, takeed the example of (face-up) encapsulation that faces up, but obviously also can be upside-down mounting (flip chip) encapsulation.
In addition, in this execution mode, illustration upside p electrode 70 and upside n electrode 80 be configured in the situation at two ends, but the configuration of electrode can be arbitrarily.For example, upside p electrode 70 and upside n electrode 80 also can be configured to horn shape.
In addition, in this execution mode, illustrative illuminating part 1A and 1B are the LED of peak wavelength in blue light range, still, can certainly be the LED of peak wavelength in scopes such as purple light scope, green range.
In addition; In said execution mode; Illuminating part 1A and 1B to having used gallium nitride compound semiconductor discuss, but also can in the scope that does not break away from thought of the present invention, use for the light-emitting component that uses compound semiconductors such as GaAlAs, GaP, GaAsP or InGaAlP.
Claims (4)
1. semiconductor light-emitting elements is characterized in that possessing:
The 1st illuminating part, it is arranged on the substrate, and has semiconductor multilayer structure, and this semiconductor multilayer structure comprises the luminescent layer between the 2nd conductive type layer of the 1st conductive type layer that is folded in the 1st conduction type and the 2nd conduction type;
The 2nd illuminating part; It is arranged in the zones of different that leaves with said the 1st luminous component on the said substrate; And have semiconductor multilayer structure, this semiconductor multilayer structure comprises the luminescent layer between the 2nd conductive type layer of the 1st conductive type layer that is folded in said the 1st conduction type and said the 2nd conduction type;
Wiring layer, its said the 1st conductive type layer with said the 1st illuminating part is electrically connected with said the 2nd conductive type layer of said the 2nd illuminating part; With
The reflector, it is arranged between any at least luminescent layer and said wiring layer in the said luminescent layer of said luminescent layer and said the 2nd illuminating part of said the 1st illuminating part, the part of the light that reflection is sent from said any at least luminescent layer.
2. semiconductor light-emitting elements according to claim 1 is characterized in that,
Than said wiring floor height, and said reflector is formed in the insulating barrier to the reflection of light rate sent from said luminescent layer in said reflector, so that this reflector does not contact with said wiring layer, said the 1st conductive type layer and said the 2nd conductive type layer.
3. semiconductor light-emitting elements according to claim 1 and 2 is characterized in that,
Said the 1st illuminating part has: transparency electrode, itself and said the 1st conductive type layer ohmic contact; Insulating barrier, it is formed on the said transparency electrode; With the 1st electrode, it connects said insulating barrier, and with said transparency electrode ohmic contact;
Said the 2nd illuminating part has: insulating barrier, and it is formed on said the 2nd conductive type layer; With the 2nd electrode, it connects said insulating barrier, and with said the 2nd conductive type layer ohmic contact;
Said wiring layer is electrically connected said the 1st electrode with said the 2nd electrode,
Said reflector is formed in the said insulating barrier with the shape corresponding shape with said wiring layer, thereby this reflector is not contacted with said the 1st electrode, said the 2nd electrode and said transparency electrode.
4. semiconductor light-emitting elements according to claim 3 is characterized in that,
Said the 1st electrode of said the 1st illuminating part comprises wire the 1st extension that extends from the connecting portion of itself and said wiring layer,
Said the 2nd electrode of said the 2nd illuminating part comprises wire the 2nd extension that extends from the connecting portion of itself and said wiring layer,
Said reflecting part also is formed on the below of said the 1st extension and said the 2nd extension with the shape corresponding shape with said extension.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-064595 | 2011-03-23 | ||
| JP2011064595A JP2012204373A (en) | 2011-03-23 | 2011-03-23 | Semiconductor light-emitting element |
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|---|---|
| CN102693998A true CN102693998A (en) | 2012-09-26 |
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|---|---|---|---|
| CN2011103068290A Pending CN102693998A (en) | 2011-03-23 | 2011-10-08 | Semiconductor light emitting element |
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| JP (1) | JP2012204373A (en) |
| CN (1) | CN102693998A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034222A (en) * | 2017-12-26 | 2019-07-19 | 精工爱普生株式会社 | Light emitting device, the manufacturing method of light emitting device and projector |
| CN110036483A (en) * | 2016-11-30 | 2019-07-19 | 首尔伟傲世有限公司 | Light emitting diode with multiple luminescence units |
| CN112997324A (en) * | 2018-12-26 | 2021-06-18 | 丰田合成株式会社 | Semiconductor light emitting device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102222861B1 (en) * | 2013-07-18 | 2021-03-04 | 루미리즈 홀딩 비.브이. | Highly reflective flip chip led die |
| JP6485019B2 (en) * | 2013-12-19 | 2019-03-20 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| EP3185293B1 (en) * | 2015-12-25 | 2020-03-25 | Nichia Corporation | Light emitting element |
| JP6354799B2 (en) * | 2015-12-25 | 2018-07-11 | 日亜化学工業株式会社 | Light emitting element |
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| CN1591918A (en) * | 2000-06-30 | 2005-03-09 | 株式会社东芝 | Semiconductor light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| JP2007214591A (en) * | 2007-04-26 | 2007-08-23 | Kyocera Corp | Light emitting device accommodating package and light emitting device |
| KR20080002161A (en) * | 2006-06-30 | 2008-01-04 | 서울옵토디바이스주식회사 | Light emitting diode with a metal reflection layer expanded and method for manufacturing the same |
| CN101183702A (en) * | 2006-11-17 | 2008-05-21 | 夏普株式会社 | Semiconductor light-emitting device and method of manufacturing the same |
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2011
- 2011-03-23 JP JP2011064595A patent/JP2012204373A/en not_active Withdrawn
- 2011-10-08 CN CN2011103068290A patent/CN102693998A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1591918A (en) * | 2000-06-30 | 2005-03-09 | 株式会社东芝 | Semiconductor light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| KR20080002161A (en) * | 2006-06-30 | 2008-01-04 | 서울옵토디바이스주식회사 | Light emitting diode with a metal reflection layer expanded and method for manufacturing the same |
| CN101183702A (en) * | 2006-11-17 | 2008-05-21 | 夏普株式会社 | Semiconductor light-emitting device and method of manufacturing the same |
| JP2007214591A (en) * | 2007-04-26 | 2007-08-23 | Kyocera Corp | Light emitting device accommodating package and light emitting device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110036483A (en) * | 2016-11-30 | 2019-07-19 | 首尔伟傲世有限公司 | Light emitting diode with multiple luminescence units |
| CN110036483B (en) * | 2016-11-30 | 2024-04-12 | 首尔伟傲世有限公司 | Light emitting diode with multiple light emitting units |
| CN110034222A (en) * | 2017-12-26 | 2019-07-19 | 精工爱普生株式会社 | Light emitting device, the manufacturing method of light emitting device and projector |
| CN110034222B (en) * | 2017-12-26 | 2023-08-11 | 精工爱普生株式会社 | Light emitting device, method for manufacturing light emitting device, and projector |
| CN112997324A (en) * | 2018-12-26 | 2021-06-18 | 丰田合成株式会社 | Semiconductor light emitting device |
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| Publication number | Publication date |
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| JP2012204373A (en) | 2012-10-22 |
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Application publication date: 20120926 |