KR20120059910A - Light emitting device and the fabricating method - Google Patents

Abstract

PURPOSE: A light emitting device and a manufacturing method thereof are provided to prevent an active layer from being directly irradiated with laser beams which are irradiated on a lower portion of a substrate for separation by forming a level difference on a first semiconductor layer included a single light emitting structure layer. CONSTITUTION: A reflective electrode(120) is located on a conductive support substrate(110). The reflective electrode includes a reflective layer(122) and an electrode layer(124). A light emitting structure layer(140) is located on the reflective electrode. The light emitting structure layer comprises a first semiconductor layer(142), a second semiconductor layer(144), and an active layer(146). An electrode(150) is formed on an upper side of the first semiconductor layer.

Description

Light emitting device and its manufacturing method {Light emitting device and the fabricating method}

The embodiment relates to a light emitting device and a control method thereof.

A typical LED (Light Emitting Diode) of a light emitting device is a device that converts an electric signal into an infrared, visible or light form using the characteristics of a compound semiconductor, and is a home appliance, a remote control, an electronic sign, an indicator, and various automation devices. It is used in a lamp and the like, and the use area of LED is gradually increasing.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

The purpose of the embodiment is that the light emitting structure layer is grown on the separation substrate and separated into a single light emitting structure layer according to the line isolation process, and then, by the laser beam incident upon the process of separating the separation substrate and the single light emitting structure layer. The present invention provides a light emitting device having a structure that is easy to prevent damage of an active layer included in a single light emitting structure layer, and a method of manufacturing the same.

The light emitting device according to the embodiment may include a conductive support substrate, a bonding layer positioned on the conductive support substrate, a reflective electrode positioned on the bonding layer, and a first semiconductor layer and a second semiconductor layer positioned on the reflective electrode. And a light emitting structure layer including an active layer between the first and second semiconductor layers, and an electrode on the first semiconductor layer, wherein the first semiconductor layer has a width of a first region adjacent to the electrode. Steps may be formed in the first and second regions to be greater than a width of the second region adjacent to the active layer.

In one embodiment, a method of manufacturing a light emitting device includes: growing a light emitting structure layer including an active layer between a first semiconductor layer, a second semiconductor layer, and the first and second semiconductor layers; Dividing the light emitting structure layer into a single light emitting structure layer, bonding a reflective electrode on the single light emitting structure layer and a conductive support substrate on the reflective electrode, and separating the separation substrate from the single light emitting structure layer And dividing the single light emitting structure layer so that the first region width of the first semiconductor layer closer to the separation substrate is greater than the second region width of the first semiconductor layer closer to the active layer. A step may be formed between the first and second regions.

The light emitting device and the method of manufacturing the same according to the embodiment form a step in the first semiconductor layer included in the single light emitting structure layer when the light emitting structure layer grown on the separation substrate is divided into a single light emitting structure layer through an isolation process. When the single light emitting structure layer and the separation substrate are separated in a laser lift off (LLO) process, the laser beam irradiated to the lower surface of the separation substrate by the step is directly irradiated onto the active layer. By preventing, damage to the active layer can be prevented, and thus there is an advantage that the reliability of the light emitting device can be secured.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.
2 to 6 are flowcharts illustrating a manufacturing process of the light emitting device shown in FIG. 1.
7 is a cross-sectional view illustrating a light emitting device according to a second embodiment.
8 is a cross-sectional view illustrating a light emitting device according to a third embodiment.

Prior to the description of the embodiments, the substrate, each layer region, pad, or pattern of each layer (film), region, pattern, or structure referred to in the embodiment is "on", "below ( "on" and "under" include all that is formed "directly" or "indirectly" through other layers. In addition, the criteria for the top or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Thus, the size of each component does not fully reflect its actual size.

In addition, the angle and direction mentioned in the process of describing the structure of the light emitting device in the embodiment are based on those described in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment.

Referring to FIG. 1, the light emitting device 100 includes a conductive support substrate 110, a reflective electrode 120 disposed on the conductive support substrate 110, and a light emitting structure layer 140 disposed on the reflective electrode 120. It may include.

The conductive support substrate 110 may be formed using a material having excellent thermal conductivity, and may also be formed of a conductive material. The conductive support substrate 110 may be formed of a single layer and may be formed of a dual structure or multiple structures.

In an embodiment, the conductive support substrate 110 is described as having conductivity, but may not have conductivity, but is not limited thereto.

That is, the conductive support substrate 110 may include, for example, gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), copper (Cu), aluminum (Al), tantalum (Ta), and silver ( Ag), platinum (Pt), and may include at least one of chromium (Cr).

As such, the conductive support substrate 110 may facilitate the emission of heat generated from the light emitting device 100 to improve the thermal stability of the light emitting device 100.

A bonding layer 111 may be stacked on the conductive support substrate 110. The bonding layer 111 may prevent the reflective electrode 120 from being exposed to the atmosphere, and the valence electric field of the reflective electrode 120 may be applied during current application. It is formed to minimize the electromigration phenomenon that is moved by. In addition, the bonding layer 111 may be formed using a metal material having excellent adhesion to the underlying material, and a diffusion barrier layer (not shown) may be further disposed on the bonding layer 111.

Examples of the metal material having excellent adhesion to the bonding layer 111 include indium (In), tin (Sn), silver (Ag), niobium (Nb), nickel (Ni), aluminum (Au), and copper. At least one of (Cu), and the diffusion barrier includes platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), ruthenium (Ru), molybdenum (Mo), iridium (Ir), and rhodium (Rh). ), Tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb), and vanadium (V). The bonding layer 111 may be disposed in a single layer or a multilayer structure. .

The reflective electrode 120 may include a reflective layer 122 and an electrode layer 124, the reflective layer 122 may be disposed on the bonding layer 111, and the electrode layer 124 may be disposed on the reflective layer 122. have.

The electrode layer 124 includes nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti), silver (Ag), Tungsten (W), Copper (Cu), Chromium (Cr), Palladium (Pd), Vanadium (V), Cobalt (Co), Niobium (Nb), Zirconium (Zr), Indium Tin Oxide (ITO) It may include at least one of aluminum zinc oxide (AZO), indium zinc oxide (IZO).

Meanwhile, the reflective layer 122 and the electrode layer 124 may have the same width, and as described below, the reflective layer 122 and the electrode layer 124 may be formed through a simultaneous firing process, and thus may have excellent bonding force.

In the embodiment, the reflective layer 122 and the electrode layer 124 are described with the same width and length, but at least one of the width and the length may be different, but is not limited thereto.

In addition, a current diffusion prevention layer (not shown) may be disposed between the reflective electrode 120 and the light emitting structure layer 140 to prevent a grouping of currents supplied from the reflective electrode 120.

The insulating layer 130 may be formed on the outer circumferential side of the reflective electrode 120, but the present invention is not limited thereto.

The insulating layer 130 may be formed of at least one of a metal material and an insulating material having lower electrical conductivity than the reflective electrode 120.

The light emitting structure layer 140 may include an active layer 146 between the first semiconductor layer 142, the second semiconductor layer 144, and the first and second semiconductor layers 142 and 144.

Here, the first semiconductor layer 142 may be implemented as an n-type semiconductor layer, the n-type semiconductor layer may be made of any one of the GaN compound semiconductor, such as GaN layer, AlGaN layer, InGAN layer, n-type dopant Can be doped.

Meanwhile, an electrode 150 may be formed of nickel (Ni) or the like on the upper surface of the first semiconductor layer 142, and light may be formed on a portion or the entire surface of the first semiconductor layer 142 by a predetermined etching method. The unevenness 148 may be formed to improve the extraction efficiency.

Here, the electrode 150 is described as being formed on a flat surface on which the unevenness 148 is not formed, but may be formed on the upper surface of the first semiconductor layer 142 on which the unevenness 148 is formed, but is not limited thereto.

An active layer 146 may be formed under the first semiconductor layer 142. The active layer 146 is a region where electrons and holes are recombined. The active layer 146 may transition to a low energy level as the electrons and holes recombine, and may generate light having a corresponding wavelength.

The active layer 146 may be formed of, for example, a semiconductor material having a compositional formula of InxAlyGa1-x-yN (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and It may be formed of a quantum well structure or a multi quantum well structure (MQW).

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the probability of recombination of electrons and holes can be increased, thereby improving the light emitting effect. In addition, a quantum wire structure or a quantum dot structure may be included.

The second semiconductor layer 144 may be formed under the active layer 146. The second semiconductor layer 144 may be implemented as a p-type semiconductor layer to inject holes into the active layer 146. For example, the p-type semiconductor layer is a semiconductor material having a composition formula of InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like may be selected, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

In this case, a third semiconductor layer (not shown) may be formed under the second semiconductor layer 144. The third semiconductor layer may be implemented as an n-type semiconductor layer.

Meanwhile, the above-described first semiconductor layer 142, the active layer 146, and the second semiconductor layer 144 may be formed of metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), and plasma. Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Sputtering But it is not limited thereto.

In addition, unlike the above-described embodiments, the first semiconductor layer 142 may be implemented as a p-type semiconductor layer, and the second semiconductor layer 144 may be implemented as an n-type semiconductor layer.

The passivation layer 160 may be formed on the side surface of the light emitting structure layer 140. The passivation layer 160 may be formed using an insulating material such as silicon oxide (SiO 2) or silicon nitride (Si 3 N 4), and may be formed along the side surface of the light emitting structure layer 140.

In an embodiment, the passivation layer 160 has been described as being formed, but at least one of the passivation layer 160 and the insulating layer 130 may be formed, but is not limited thereto.

The light emitting device 100 shown in FIG. 1 shows a state in which a manufacturing process is completed, and after the light emitting structure layer 140 is grown on a separation substrate (not shown) during the manufacturing process of the light emitting device 100, the light emitting structure layer Through the isolation process 140, a plurality of single light emitting structure layers separated by device sizes may be formed.

At this time, in the isolation process, a plurality of single light emitting structure layers separated by device sizes form a step having a different width between the upper and lower portions of the first semiconductor layer 142, thereby causing a laser lift off (LLO) process. When separating the separation substrate and the plurality of single light emitting structure layers, the laser beam irradiated on the lower surface of the separation substrate may be prevented from being directly irradiated onto the active layer 146 by the step.

As described above, the manufacturing process of the light emitting device 100 will be described in detail with reference to FIGS. 2 to 6.

2 to 6 are flowcharts illustrating a manufacturing process of the light emitting device shown in FIG. 1.

Referring to FIG. 2, the separation substrate 101 may be selected from the group consisting of sapphire substrate (Al203), GaN, SiC, ZnO, Si, GaP, InP, GaAs, and the like. A buffer layer (not shown) may be formed between the substrate 101 and the light emitting structure layer 140.

The buffer layer may have a form in which Group 3 and Group 5 elements are combined, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and dopants may be doped.

An undoped semiconductor layer (not shown) may be formed on the separation substrate 101 or the buffer layer, and either or both of a buffer layer and an undoped semiconductor layer (not shown) may be formed. It may not be formed and is not limited to this structure.

That is, the light emitting structure layer 140 including the first semiconductor layer 142, the active layer 146, and the second semiconductor layer 144 may be disposed on the separation substrate 101, and the first semiconductor layer 142 may be disposed on the separation substrate 101. ), The active layer 146 and the second semiconductor layer 144 are the same as described above in FIG. 1 and will be omitted.

Referring to FIG. 3, the light emitting structure layer 140 may be separated into single light emitting structure layers 140_1 and 140_2 having device sizes by an isolation process.

In the embodiment, the light emitting structure layer 140 is described as being separated into two single light emitting structure layers 140_1 and 140_2 according to an isolation process, but the number of light emitting structure layers 140 and 140_2 is not limited thereto. The size of may be the same or different.

Here, the first semiconductor layer 142 of each of the single light emitting structure layers 140_1 and 140_2 has a width w1 of the first region s1 closer to the separation substrate 101 and is closer to the active layer 146. A stepped step may be formed to be larger than the width w2 of the second region s2.

That is, the width w1 of the first region s1 is made larger than the width w2 of the second region s2, so that the width w1 of the first region s1 is irradiated to the lower surface of the separation substrate 101 at the time of separating the separation substrate 101 to be described later. Damage to the active layer 146 may be prevented by preventing the laser beam from being irradiated to the active layer 146 by the width difference between the first and second regions s1 and s2. A detailed description thereof will be described later.

Referring to FIG. 4, a passivation layer 160 may be formed on each side of each of the single light emitting structure layers 140_1 and 140_2.

That is, the passivation layer 160 is disposed on the rear surface of the first region s1 of the first semiconductor layer 142 and the side surface of the first semiconductor layer 142, and the first semiconductor layer 142 and the active layer 146. And shorts between the second semiconductor layers 144 may be prevented, and corrosion of the first semiconductor layers 142 to 144 may be prevented.

Thereafter, the reflective electrode 120 including the electrode layer 124 and the reflective layer 122 may be formed on the second semiconductor layer 144, and the electrode layer 124 and the reflective layer 122 are simultaneously formed. It does not limit to this.

That is, the electrode layer 124 and the reflective layer 122 may be formed by continuously co-firing by a method such as sputtering.

Etching may be performed on the outer regions of the electrode layer 124 and the reflective layer 122. The etching may be performed by dry etching, and the electrode layer 124 and the reflective layer 122 may be simultaneously etched. The electrode layer 124 and the reflective layer 122 may be formed to have the same width.

In addition, the reflective layer 122 may have a larger area than the electrode layer 124, and may maximize the reflective characteristics of the reflective layer 122, thereby improving external luminous efficiency of the light emitting device 100.

As such, when the electrode layer 124 and the reflective layer 122 are formed by firing at the same time, the adhesion between the electrode layer 124 and the reflective layer 122 may be improved.

In addition, the insulating layer 130 may be formed on the second semiconductor layer 144 and the passivation layer 160 by using a sputtering method, or the like.

In addition, after the reflective electrode 120 and the insulating layer 130 are formed, the bonding layer 111 and the conductive support substrate 110 may be formed on the upper surface of the reflective electrode 120 and the insulating layer 130.

Since the detailed signature is the same as the content described with reference to FIG. 1, description thereof will be omitted.

Referring to FIG. 5, a laser beam hv is irradiated on the lower surface of the separation substrate 101 for the separation process of the separation substrate 101 and the single light emitting structure layers 140_1 and 140_2.

That is, the laser beam hv irradiated onto the lower surface of the separation substrate 101 is also irradiated to the first region s1 of the first semiconductor layer 142, but the width w1 of the first region s1 is equal to Due to a step larger than the width w2 of the two regions s2, the laser beam hv is directly irradiated to the passivation layer 160 and the active layer 146 disposed on the side surfaces of the single light emitting layers 140_1 and 140_2. Can be prevented.

Damage may occur on a lower surface of the first semiconductor layer 142 by the laser beam hv, but this may be caused by irregularities 148 on the light emitting surface of the first semiconductor layer 142. It may be the same as forming a, it will not affect the luminous efficiency accordingly.

As described above, since the laser beam hv is directly prevented from being irradiated to the active layer 146 by the first region s1 of the first semiconductor layer 142, the damage of the active layer 146 is prevented. In this case, it may be easy to ensure the reliability of the light emitting device (100).

Referring to FIG. 6, after the separation substrate 101 is separated, the unevenness 148 pattern may be formed on a part or the entire area of the first semiconductor layer 142, and the unevenness 148 pattern is formed. 150 may be bonded.

In the light emitting device 100 according to the embodiment, at least one of the passivation layer 160 and the insulating layer 130 may be disposed, and the passivation layer 160 and the insulating layer 130 may be integrally formed. There is no limit.

7 is a cross-sectional view illustrating a light emitting device according to a second embodiment.

7 will be omitted or briefly described with respect to the configuration overlapping with FIG.

Referring to FIG. 7, the light emitting device may include a conductive support substrate 210, a reflective electrode 220 disposed on the conductive support substrate 210, and a light emitting structure layer 240 disposed on the reflective electrode 220. Can be.

In addition, a bonding layer 211 may be disposed on the conductive support substrate 210, and the reflective electrode 220 may include a reflective layer 222 and an electrode layer 224, and the reflective layer 222 may be a bonding layer 211. The electrode layer 224 may be disposed on the reflective layer 222.

In addition, an insulating layer 230 may be formed on an outer circumferential side of the reflective electrode 220, and the light emitting structure layer 240 may include the first semiconductor layer 242, the active layer 246, and the second semiconductor layer 244. It may include.

Here, the reflective electrode 220 is disposed on the second semiconductor layer 244, the unevenness 248 is disposed on all or a part of the region on the first semiconductor layer 242, and the upper portion of the first semiconductor layer 242 is formed. An electrode 250 may be formed on the electrode 250.

In addition, the passivation layer 260 may be formed on the side surface of the light emitting structure layer 220, but is not limited thereto.

In this case, the first semiconductor layer 242, the active layer 246, and the second semiconductor layer 244 may have the same width.

In the first semiconductor layer 242 illustrated in FIG. 7, after the first region s1 of the first semiconductor layer 142 of FIG. 1 separates the separating substrate 101 and the light emitting structure layer 140 of FIG. 6, After etching the first semiconductor layer 142 including the first region, the concave-convex 148 and the electrode 150 are formed.

8 is a cross-sectional view illustrating a light emitting device according to a third embodiment.

8 will be omitted or briefly described with respect to the configuration overlapping with FIG.

Referring to FIG. 8, the light emitting device may include a conductive support substrate 310, a reflective electrode 320 disposed on the conductive support substrate 310, and a light emitting structure layer 340 disposed on the reflective electrode 320. Can be.

In addition, a bonding layer 311 may be disposed on the conductive support substrate 310, and the reflective electrode 320 may include a reflective layer 322 and an electrode layer 324, and the reflective layer 322 may be a bonding layer 311. The electrode layer 324 may be disposed on the reflective layer 322.

In addition, an insulating layer 330 may be formed on an outer circumferential side of the reflective electrode 320, and the light emitting structure layer 340 may include the first semiconductor layer 342, the active layer 346, and the second semiconductor layer 344. It may include.

Here, the reflective electrode 320 is disposed on the second semiconductor layer 344, the unevenness 348 is disposed on all or part of the region on the first semiconductor layer 342, and the upper portion of the first semiconductor layer 342 is disposed on the first semiconductor layer 342. The electrode 350 may be formed.

In this case, first and second passivation layers 360 and 362 may be disposed on side surfaces of the light emitting structure layer 340.

Here, the first passivation layer 360 may be disposed between the steps formed in the insulating layer 330 and the first semiconductor layer 344, and may be the same as the passivation 160 shown in FIG. 1.

The second passivation layer 362 may be disposed on the first passivation layer 360, and may be disposed in an area (not shown) except for a portion (not shown) of the insulating layer 330 to which the first passivation 360 is in contact. In contact with the first semiconductor layer 342 and in contact with the upper side of the first semiconductor layer 342.

The light emitting device according to the embodiment may be mounted in a package, and a plurality of light emitting device packages on which the light emitting diodes are mounted are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, on an optical path of the light emitting device package. This can be arranged.

The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or an illumination system including the light emitting diode or light emitting device package described in the above embodiments, for example, the illumination system may include a lamp or a street lamp.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely exemplary and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains are not exemplified above without departing from the essential characteristics of the embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the embodiments defined in the appended claims.

Claims (16)

Conductive support substrate;
A bonding layer on the conductive support substrate;
A reflective electrode on the bonding layer; And
A light emitting structure layer on the reflective electrode and including an active layer between a first semiconductor layer, a second semiconductor layer, and the first and second semiconductor layers; And
An electrode disposed on the first semiconductor layer;
The first semiconductor layer,
A light emitting device in which the steps are formed in the first and second regions so that the width of the first region adjacent to the electrode is larger than the width of the second region adjacent to the active layer. The method of claim 1, wherein the step is
Stepped light emitting device. The method of claim 1, wherein the step is
The light emitting device formed on both side surfaces of the first and second regions of the first semiconductor layer. The method of claim 1, wherein the reflective electrode,
A reflective layer in contact with the bonding layer; And
And an electrode layer in contact with the light emitting structure layer. The method of claim 1,
And an insulating layer in contact with an outer circumferential side of the reflective electrode. The method of claim 5, wherein the insulating layer,
A light emitting device comprising one of a metal material and an insulating material having lower electrical conductivity than the reflective electrode. The method of claim 5, wherein
And a first passivation layer disposed between the insulating layer and the step. The method of claim 7, wherein the first passivation layer,
A light emitting device having an upper portion in contact with the first region and a lower portion in contact with the insulating layer. The method of claim 7, wherein
And a second passivation layer disposed on the first passivation layer.
The second passivation layer,
A light emitting device in contact with the insulating layer and in contact with an upper portion of the first semiconductor layer along a side surface of the first region. The method of claim 1, wherein the first semiconductor layer,
A light emitting device in which irregularities are formed in a portion or the entire area of the upper portion. Growing a light emitting structure layer on the separation substrate, the light emitting structure layer including an active layer between the first semiconductor layer, the second semiconductor layer, and the first and second semiconductor layers;
Dividing the light emitting structure layer into a single light emitting structure layer;
Bonding a reflective electrode on the single light emitting structure layer and a conductive support substrate on the reflective electrode; And
And separating the separation substrate from the single light emitting structure layer.
Dividing the single light emitting structure layer,
Light emission that forms a step between the first and second regions so that the width of the first region of the first semiconductor layer closer to the separation substrate is greater than the width of the second region of the first semiconductor layer closer to the active layer Method of manufacturing the device. The method of claim 11,
Before the bonding step, forming a first passivation layer on the side of the single light emitting structure layer. The method of claim 12, wherein the bonding step,
And forming an insulating layer in contact with an outer circumferential side of the reflective electrode and the first passivation layer. The method of claim 13,
After separating the single light emitting structure layer, a second passivation layer disposed on a side surface of the first passivation layer and in contact with the insulating layer and in contact with an upper portion of the first semiconductor layer along the side surface of the first region is disposed. Forming method of manufacturing a light-emitting device comprising a. The method of claim 11,
And after the separating of the single light emitting structure layer, removing the first region by the first semiconductor layer. The method of claim 11,
After the step of separating the single light emitting structure layer, forming irregularities in the upper portion or the entire area of the first semiconductor layer, and forming an electrode on the upper portion of the first semiconductor layer; manufacturing method of a light emitting device comprising a .

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