CN102693975B - Composite capacitor - Google Patents
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- CN102693975B CN102693975B CN201210188751.1A CN201210188751A CN102693975B CN 102693975 B CN102693975 B CN 102693975B CN 201210188751 A CN201210188751 A CN 201210188751A CN 102693975 B CN102693975 B CN 102693975B
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Abstract
The invention discloses a kind of composite capacitor, comprise substrate, at least one parallel plate capacitor and at least one through hole electric capacity, aforesaid substrate has through hole, and parallel plate capacitor is then positioned on substrate and comprises the first conductor layer, two dielectric layers and the second conductor layer.At least one through hole electric capacity is in parallel with at least one parallel plate capacitor.This through hole electric capacity at least comprises one deck and the first conductor layer and is electrically connected to the second negative electrode layer that the anode layer of the one side of substrate, one deck first dielectric layer, one deck first negative electrode layer and one deck and the second conductor layer are electrically connected to the another side of substrate, makes the one pole of parallel plate capacitor and through hole electric capacity pull out surface at substrate.And anode layer is positioned at the inner surface of at least one through hole, and the surface of anode layer is loose structure.First dielectric layer is then positioned on the loose structure of anode layer.Be the surface being covered in the first dielectric layer as the first negative electrode layer, the second negative electrode layer is the surface being covered in the first negative electrode layer.
Description
The divisional application that the application is application number is 200710305451.6, denomination of invention is the application for a patent for invention of " composite capacitor ".
Technical field
The present invention relates to a kind of composite capacitor (hybrid capacitor), and in particular to a kind of can voltage stabilizing reduce composite capacitor and the manufacture method thereof of noise in high frequency.
Background technology
For the multi-functional demand in response to electronic product, the IC of difference in functionality being packaged into a multi-functional IC module with three-dimensional stacked kenel, is the technological trend of system in package (System in Package, SiP).When different IC does three-dimensional stacked integration, for solving the ill-matched problem of upper and lower layer IC pin, the layout again that one deck intermediary layer is used as upper and lower chip signal can be added, upper and lower layer IC is matched.Along with the raising of the stacking number of plies, with surface mounting devices (surface mounted device, SMD) capacitance arrangement be not sufficient to reach on circuit board stable multilayer chiop stacking under regulatory requirements.
In addition, along with the quickening of IC operating frequency, if the denoising under high frequency is only by the decoupling capacitance on circuit board, then because of transmission path under IC multiple-level stack can path long, cause waiting school series inductance increase, high-frequency noise is not easily removed.
Summary of the invention
The invention provides a kind of composite capacitor, can bulky capacitor be provided, to provide the voltage stabilizing of chip chamber.
The present invention separately provides a kind of composite capacitor, can remove High-frequency Interference.
The present invention proposes a kind of composite capacitor, and comprise a substrate, at least one parallel plate capacitor and at least one through hole electric capacity, wherein substrate has several through hole, and parallel plate capacitor is then positioned on substrate.At least one through hole is arranged in and in parallel with parallel plate capacitor as through hole electric capacity.Through hole electric capacity itself also can all or part of parallel connection.This through hole electric capacity at least comprises one deck anode layer, one deck first dielectric layer, one deck first negative electrode layer and one deck second negative electrode layer.Above-mentioned anode layer is at least positioned at the inner surface of above-mentioned through hole, and anode layer to the surface be less than within through hole is a loose structure.First dielectric layer is then at least positioned on the loose structure of anode layer.Be the surface being covered in the first dielectric layer as the first negative electrode layer, the second negative electrode layer is the surface being covered in the first negative electrode layer.Above-mentioned parallel plate capacitor at least comprises one deck first conductor layer, be positioned at one deck second dielectric layer on the first conductor layer and one deck second conductor layer, and the second dielectric layer is between the first conductor layer and the second conductor layer.First conductor layer and anode layer are electrically connected to the one side of substrate, and the second conductor layer and the second negative electrode layer are electrically connected to the another side of substrate, make the one pole of parallel plate capacitor and through hole electric capacity pull out surface at substrate.
The present invention separately proposes a kind of composite capacitor, and comprise a substrate, at least one parallel plate capacitor and at least one through hole electric capacity, wherein substrate has several through hole, and through hole electric capacity is arranged at least one through hole.Above-mentioned through hole electric capacity at least comprises one deck anode layer, one deck first dielectric layer, one deck first negative electrode layer and one deck second negative electrode layer.Above-mentioned anode layer is at least positioned at the inner surface of above-mentioned through hole, and anode layer is a loose structure to the inner surface being less than through hole.First dielectric layer is then positioned on the loose structure of anode layer.Be the surface being covered in the first dielectric layer as the first negative electrode layer, the second negative electrode layer is the surface being covered in the first negative electrode layer.Then be positioned at around above-mentioned through hole electric capacity on substrate as parallel plate capacitor, and with through hole Capacitance parallel connection.Through hole electric capacity itself also can all or part of parallel connection.Above-mentioned parallel plate capacitor at least comprises one deck first conductor layer, be positioned at one deck second dielectric layer on the first conductor layer and one deck second conductor layer, and the second dielectric layer is between the first conductor layer and the second conductor layer.First conductor layer and anode layer are electrically connected to the one side of substrate, and the second conductor layer and the second negative electrode layer are electrically connected to the another side of substrate, make the one pole of parallel plate capacitor and through hole electric capacity pull out surface at substrate.
In an embodiment of the present invention, the material of the anode layer of above-mentioned through hole electric capacity comprises aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO).
In an embodiment of the present invention, the first dielectric layer of above-mentioned through hole electric capacity comprises the substrate surface extended to beyond through hole.
In an embodiment of the present invention, the material of the first negative electrode layer of above-mentioned through hole electric capacity comprises organic semiconductor, inorganic semiconductor or organic and inorganic mixing (organic-inorganic hybrid) electric conducting material.Wherein, inorganic semiconductor comprises manganese dioxide (MnO
2), organic semiconductor then comprises the wrong salt of Charger transfer or conducting polymer.Aforesaid conductive macromolecule comprises polypyrrole (polypyrrole), polythiophene (polythiophene) or polyaniline (polyaniline).And when the material of the first negative electrode layer is the conductive polymer period of the day from 11 p.m. to 1 a.m, can be two kinds of conducting polymer composites of single conducting polymer composite or mixing.
In an embodiment of the present invention, the first negative electrode layer of above-mentioned through hole electric capacity comprises sandwich construction.
In an embodiment of the present invention, the second negative electrode layer of above-mentioned through hole electric capacity comprises the composite bed of carbon containing and metal, and metal wherein comprises silver, copper, gold or nickel.
In an embodiment of the present invention, the second negative electrode layer of above-mentioned through hole electric capacity comprises pure metal layer.
In an embodiment of the present invention, the second negative electrode layer of above-mentioned through hole electric capacity comprises and fills up through hole.
In an embodiment of the present invention, aforesaid substrate comprises silicon substrate, organic substrate or insulated substrate.
In an embodiment of the present invention, the through hole in aforesaid substrate is arrayed.
In an embodiment of the present invention, the dielectric coefficient of the second dielectric layer of above-mentioned parallel plate capacitor is about 1 ~ 2000, thickness is about 0.1 μm ~ 10 μm.
In an embodiment of the present invention, the material of the second dielectric layer of above-mentioned parallel plate capacitor is then barium zirconium phthalate (barium zirconate titanate, BZT), barium strontium titanate (barium strontium titanate, BST), barium titanate (barium titanate), containing plumbous (Pb), niobium (Nb), tungsten (W), calcium (Ca), the barium titanate (barium titanate) of magnesium (Mg) and zinc (Zn) wherein at least one element, lead titanates (lead titanate), lead zirconate titanate (lead zirconate titanate, PZT), polycrystalline lanthanum modification lead zirconate titanate (polycrystallinelanthanum-modified lead zirconate titanate, PLZT), lead niobate (lead niobate) and derivative thereof, and a kind of material selected in the group that forms of lead tungstate (lead tungstate) and derivative thereof.
In an embodiment of the present invention, above-mentioned first conductor layer or the second conductor layer and anode layer can be identical electric conducting material.
In an embodiment of the present invention, above-mentioned first conductor layer or the second conductor layer and the second negative electrode layer can be identical electric conducting material.
In an embodiment of the present invention, aforesaid substrate comprises metal substrate.And a part for said metal substrates can be used as the first conductor layer of parallel plate capacitor; Or a part for said metal substrates can be used as the anode layer of through hole electric capacity.
In an embodiment of the present invention, the shape of above-mentioned parallel plate capacitor comprises hexagon, circle, square or annular.
In an embodiment of the present invention, the shape of above-mentioned through hole electric capacity comprises hexagon, circle, square or annular.
The present invention because the through hole electric capacity of anode layer of tool loose structure in parallel and parallel plate capacitor, so the composite capacitor of a bulky capacitor can be obtained.In addition, by the through hole electric capacity of anode layer and the coordinating of parallel plate capacitor of tool loose structure, the composite capacitor of the present invention meeting demand can be designed.Therefore, composite capacitor of the present invention can provide the capacitance being greater than 0.1 μ F in a die size, to provide the voltage stabilizing of chip chamber, removes the High-frequency Interference of 1 ~ 4GHz simultaneously.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate accompanying drawing, be described in detail below.
Accompanying drawing explanation
Fig. 1 is a kind of substrate stereogram of composite capacitor, according to the first embodiment of the present invention.
Fig. 2 is the generalized section of the II-II line segment of Fig. 1.
Fig. 3 is the generalized section of the composite capacitor of a kind of variation of Fig. 2.
Fig. 4 is the generalized section of a kind of composite capacitor according to the second embodiment of the present invention.
Fig. 5 is the top view of a kind of composite capacitor according to the third embodiment of the present invention.
Fig. 6 is the generalized section of the VI-VI line segment of Fig. 5.
Fig. 7 is the top view of the composite capacitor of a kind of variation of Fig. 5.
Fig. 8 is the impedance of the composite capacitor of Fig. 7 and the simulation curve figure of frequency.
Fig. 9 A to Fig. 9 C is three kinds of variation of the 3rd embodiment.
Description of reference numerals
10,40,50: composite capacitor 100,500: substrate
102,402,502: through hole
110,410,510,710a, 710b, 710c, 910a, 910b, 910c: parallel plate capacitor
112,412: the first conductor layer 114,414: the second conductor layers
116,416: the second dielectric layers
120,420,520,720,900a, 900b, 900c: through hole electric capacity
122,422: anode layer 124,424: the first dielectric layer
126,426: the first negative electrode layer 128,428: the second negative electrode layers
130,300: loose structure 140,440: circuit layout
142,442: projection 144,530: insulating barrier
400: metal substrate 444: insulating barrier
Embodiment
Hereinafter refer to accompanying drawing and understand the present invention more fully, wherein accompanying drawing display various embodiments of the present invention.But, the present invention also multi-formly can to put into practice with multiple, and should be interpreted as being limited to hereafter stated embodiment.In fact, provide these embodiments just in order to make the present invention disclosed more detailed and complete, fully convey the scope of the invention to those skilled in the art thus simultaneously.In the drawings, for clarity the size of each layer and relative size may be done the description exaggerated.
Fig. 1 is a kind of substrate or the silicon intermediary layer with composite capacitor according to the first embodiment of the present invention.Fig. 2 is the generalized section of the II-II line segment of Fig. 1.
Please refer to Fig. 1 and Fig. 2, the composite capacitor 10 of the first embodiment comprises a substrate 100, at least one parallel plate capacitor 110 and at least one through hole electric capacity 120, and wherein substrate 100 has several through hole 102, and parallel plate capacitor 110 is then positioned on substrate 100.At least one through hole 102 is arranged in and in parallel with parallel plate capacitor 110 as through hole electric capacity 120.This through hole electric capacity 120 at least comprises one deck anode layer 122, one deck first dielectric layer 124, one deck first negative electrode layer 126 and one deck second negative electrode layer 128.In a first embodiment, substrate 100 is silicon substrate, and substrate 100 can also be organic substrate in addition, substrate 100 can also be metal substrate or substrate 100 can also be insulated substrate.Through hole 102 in aforesaid substrate 100 can be selected with arrayed, and except through hole electric capacity 120 is set, also can be used as a part for circuit layout 140, for example connect power stage by projection 142 and enter end (Power) and signal end (Signal), through hole electric capacity 120 is then ground connection (Ground).And, although the first embodiment is the through hole electric capacity 120 of display circle, but the present invention should not be construed as limited to the given shape described in the first embodiment, and can comprise other shapes that can implement, as hexagon, circle, the through hole electric capacity such as square or annular.
Continue referring to Fig. 2, anode layer 122 is at least positioned at the inner surface of through hole 102, wherein the material of anode layer 122 such as aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO) etc.And anode layer 122 is loose structure 130 to the inner surface being less than through hole 102, as the enlarged drawing of Fig. 2 upper right.First dielectric layer 124 is positioned on the loose structure 130 of anode layer 122; For example, when anode layer 122 is aluminium lamination, and the structure that loose structure 130 is metallic aluminiums after etching, then the first dielectric layer 124 aluminium oxide (Al of being loose structure 130 and being formed in loose structure 130 surface after anodic oxidation
2o
3).Previous porous structure 130 also can be described as " spongelike structure ".The surfaces being covered in the first dielectric layer 124 as the first negative electrode layer 126.The material such as mixing of organic semiconductor, inorganic semiconductor or organic and inorganic (organic-inorganic hybrid) electric conducting material, wherein inorganic semiconductor such as the manganese dioxide (MnO of the first negative electrode layer 126
2), the organic semiconductor then wrong salt of such as Charger transfer or conducting polymer.And above-mentioned conducting polymer such as polypyrrole (polypyrrole), polythiophene (polythiophene), polyaniline (polyaniline) or other suitable conducting polymer.And the material of the first negative electrode layer 126 also can be selected to be two kinds of conducting polymer composites of single conducting polymer composite or mixing.In addition, the first negative electrode layer 126 can be also sandwich construction, and is not limited to the simple layer structure described by the first embodiment.
Please once again with reference to Fig. 2, the material of above-mentioned first negative electrode layer 126 because have self-healing effect, so have the ability of insulating voluntarily in height electric leakage region, in order to reduce the electric leakage of capacity cell.Second negative electrode layer 128 fills up above-mentioned through hole 102, to cover the first negative electrode layer 126 surface.Above-mentioned second negative electrode layer 128 comprises the composite bed of carbon containing and metal, and the metal wherein in composite bed comprises silver, copper, gold or nickel; That is, the material of the second negative electrode layer 128 can be C/Ag or C/Cu or C/Au.Second negative electrode layer 128 also can be pure metal layer.Above-mentioned second negative electrode layer 128 comprises and fills up above-mentioned through hole.
Continue referring to Fig. 2, above-mentioned parallel plate capacitor 110 at least comprises one deck first conductor layer 112, be positioned at one deck second conductor layer 114 on the first conductor layer 112 and one deck second dielectric layer 116, second dielectric layer 116 is between the first conductor layer 112 and the second conductor layer 114, and wherein the capacitance of parallel plate capacitor 110 is for example at 0.1 below μ F.In addition, parallel plate capacitor 110 except the one side that be arranged on substrate 100 the same as Fig. 2, also can select to be arranged on substrate 100 two-sided on.Wherein, the dielectric coefficient of the second dielectric layer 116 of parallel plate capacitor 110 is such as 1 ~ 2000, thickness is such as between 0.1 μm ~ 10 μm.In a first embodiment, the material of said second dielectric layer 116 is such as barium zirconium phthalate (barium zirconate titanate, BZT), barium strontium titanate (barium strontium titanate, BST), barium titanate (barium titanate), containing Pb, Nb, W, Ca, the barium titanate (barium titanate) of Mg and Zn wherein at least one element, lead titanates (lead titanate), lead zirconate titanate (leadzirconate titanate, PZT), polycrystalline lanthanum modification lead zirconate titanate (polycrystallinelanthanum-modified lead zirconate titanate, PLZT), lead niobate (lead niobate) and derivative thereof, and a kind of material selected in the group that forms of lead tungstate (lead tungstate) and derivative thereof.
In addition, Fig. 2 describes by cross sectional illustration, and cross sectional illustration is just done idealized signal explanation, therefore because of design requirement and/or may be permission and different with the shape in figure, so the present invention should not be construed as limited to the given shape described in the first embodiment, but comprise other shapes that can implement.For example, parallel plate capacitor 110 shape in Fig. 2 comprises hexagon, circle, the flat shape such as square.Therefore, profile is essentially schematically, and its shape does not mean the accurate shape of element, and not in order to limit the scope of the invention.And above-mentioned first conductor layer 112 or the second conductor layer 114 can select to adopt the electric conducting material identical with anode layer 122; Or select to adopt the electric conducting material identical with the second negative electrode layer 128.As for being then insulating barrier 144 in substrate 100 surface coverage.
Fig. 3 is then the generalized section of the composite capacitor of a kind of variation of Fig. 2, wherein uses the component symbol identical with in Fig. 2 to represent identical component.Please refer to Fig. 3, itself and Fig. 2 maximum difference are that the loose structure 300 of anode layer 122 is substrate 100 surfaces extended to beyond through hole 102.In other words, substrate 100 surface that the first dielectric layer (not illustrating) being positioned at loose structure 300 surface also will extend to beyond through hole 102, therefore through hole capacitance will be larger.
Fig. 4 is the generalized section of a kind of composite capacitor according to the second embodiment of the present invention.
Please refer to Fig. 4, the composite capacitor 40 of the second embodiment comprises a metal substrate 400, at least one parallel plate capacitor 410 and at least one through hole electric capacity 420, and wherein metal substrate 400 has several through hole 402.A part for metal substrate 400 can be used as the first conductor layer 412 of parallel plate capacitor 410, second conductor layer 414 of parallel plate capacitor 410 is then positioned at the second dielectric layer 416 on the surface, and the second dielectric layer 416 is between metal substrate 400 surface and the second conductor layer 414.The first embodiment is please refer to as the selectable material of the second dielectric layer 416.
Continue referring to Fig. 4, through hole electric capacity 420 is positioned at through hole 402 and in parallel with parallel plate capacitor 410.And, because the second embodiment is the relation adopting metal substrate, so a part for metal substrate 400 can be used as the anode layer 422 of through hole electric capacity 420.And loose structure 430 is located in the inner surface of through hole 402.First dielectric layer 424 is positioned on loose structure 430, as the enlarged drawing of Fig. 4 upper right.Selection about the position of the first negative electrode layer 426 and the second negative electrode layer 428, material and structure all can refer to the first embodiment, therefore repeats no more.In addition, because the relation of metal substrate 400, so the position connecting positive pole does not need to make through hole.As for the through hole of signal transmission, then also will an insulating barrier 444 be set between through hole 402 and circuit layout 440.And the through hole 402 in metal substrate 400 also can be selected with arrayed, and through hole electric capacity 420 is the same with the first embodiment, except can be circle, also can comprise other shapes that can implement, as hexagon, circle, square or annular etc.In addition, parallel plate capacitor 410 shape in Fig. 4 can be hexagon, circle, the flat shape such as square.In addition, a part for metal substrate 400 can be used as the first conductor layer and anode layer, also can select on metal substrate 400, to sputter other electric conducting materials in addition as the first conductor layer or anode layer.
Fig. 5 is the top view of a kind of composite capacitor according to the third embodiment of the present invention.Fig. 6 is the generalized section of the VI-VI line segment of Fig. 5.
Please refer to Fig. 5 and Fig. 6, the composite capacitor 50 of the 3rd embodiment comprises a substrate 500, at least one parallel plate capacitor 510 and at least one through hole electric capacity 520, and wherein substrate 500 has through hole 502, and namely through hole electric capacity 520 be arranged in through hole 502.The structure of above-mentioned through hole electric capacity 520 is identical with the through hole electric capacity of the first embodiment, so use the component symbol of the first embodiment to represent same or similar element.Be positioned at around above-mentioned through hole electric capacity 520 on substrate 500 as parallel plate capacitor 510, and in parallel with through hole electric capacity 520.The structure of above-mentioned parallel plate capacitor 510 and the parallel plate capacitor of the first embodiment similar, so use the component symbol of the first embodiment to represent same or similar element.And also cover a layer insulating 530 on parallel plate capacitor 510 and substrate 500 surface.
In the third embodiment, substrate 500 can be silicon substrate, and substrate 500 can also be metal substrate, organic substrate or insulated substrate in addition.When substrate 500 is metal substrates, the anode layer that a part can be used as the first conductor layer of parallel plate capacitor 510, another part can be used as through hole electric capacity 520 of substrate 500.
Please be configured in the hexagon-shaped pattern in arrayed with reference to the parallel plate capacitor 510 in Fig. 5, figure and through hole electric capacity 520 once again.Therefore, position and the quantity of parallel plate capacitor can be designed according to required capacitance, as Fig. 7.Show a composite capacitor 70 be made up of single through hole electric capacity 720 and three circle parallel plate capacitor 710a, 710b and 710c in the figure 7, and parallel plate capacitor 710a, 710b and 710c can select the electric capacity of different dielectric coefficient, and obtain the impedance (Impedance) of Fig. 8 and the simulation curve figure of frequency (Frequency).As can be seen from Figure 8, the composite capacitor of the 3rd embodiment according to demand, can design and have low-impedance composite capacitor in large-scale frequency.
Please once again with reference to Fig. 6 and Fig. 7, when parallel plate capacitor 710a, 710b and 710c want and through hole electric capacity 720 is in parallel, except the same face at substrate 500 is in parallel, also all can configure parallel plate capacitor in substrate 500 is two-sided, or do interconnected parallel plate capacitor design in substrate is two-sided.In addition, the parallel plate capacitor of the 3rd embodiment and through hole electric capacity can also have other to be out of shape, as the hexagon through hole electric capacity 900c and the ring-like parallel plate capacitor 910c of hexagonal etc. of the circular through hole electric capacity 900a of Fig. 9 A and the squared-shaped passthrough openings electric capacity 900b of ring-like parallel plate capacitor 910a, Fig. 9 B and square frame parallel plate capacitor 910b, Fig. 9 C.
In addition, although all only show a through hole electric capacity in the composite capacitor of above each embodiment, but those skilled in the art are after consulting above embodiment, the quantity should understanding through hole electric capacity also according to increase in demand, can become through hole electric capacity in parallel mutually.
In sum, composite capacitor of the present invention by the through hole electric capacity of the anode layer of tool loose structure and coordinating of parallel plate capacitor, and designs the composite capacitor meeting demand.For example, composite capacitor of the present invention can provide the capacitance being greater than 0.1 μ F in a die size, to provide the voltage stabilizing of chip chamber; And composite capacitor of the present invention can remove the High-frequency Interference of 1 ~ 4GHz.And this composite capacitor is suitable for, as silicon interposer substrate electric capacity (silicon interposer substratecapacitor, SISC), certainly also can being arranged on the organic substrate under IC.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; without departing from the spirit and scope of the present invention, when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion of defining depending on claim for those skilled in the art.
Claims (50)
1. a composite capacitor, comprising:
Substrate, this substrate has multiple through hole;
At least one parallel plate capacitor, is positioned on this substrate; And
At least one through hole electric capacity, is arranged at least one through hole and in parallel with this parallel plate capacitor, and this through hole electric capacity at least comprises:
Anode layer, is at least positioned at the inner surface of this through hole, and wherein this anode layer is a loose structure to the inner surface being less than through hole;
First dielectric layer, is at least positioned on this loose structure of this anode layer;
First negative electrode layer, is covered in the surface of this first dielectric layer; And
Second negative electrode layer, is covered in the surface of this first negative electrode layer, and
This parallel plate capacitor at least comprises:
First conductor layer, and this anode layer of this first conductor layer and this through hole electric capacity is electrically connected to the one side of this substrate;
Second conductor layer, is positioned on this first conductor layer, and this second negative electrode layer of this second conductor layer and this through hole electric capacity is electrically connected to the another side of this substrate, makes the one pole of this parallel plate capacitor and this through hole electric capacity pull out surface at this substrate; And
Second dielectric layer, between this first conductor layer and this second conductor layer.
2. composite capacitor as claimed in claim 1, wherein the material of this anode layer of this through hole electric capacity comprises aluminium, tantalum, niobium or columbium monoxide.
3. composite capacitor as claimed in claim 1, wherein this first dielectric layer of this through hole electric capacity extends to this one side of this substrate beyond this through hole and this another side of this substrate.
4. composite capacitor as claimed in claim 1, wherein the material of this first negative electrode layer of this through hole electric capacity comprises organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material.
5. composite capacitor as claimed in claim 4, wherein this inorganic semiconductor comprises manganese dioxide.
6. composite capacitor as claimed in claim 4, wherein this organic semiconductor comprises the wrong salt of Charger transfer or conducting polymer.
7. composite capacitor as claimed in claim 6, wherein this conducting polymer comprises polypyrrole, polythiophene or polyaniline.
8. composite capacitor as claimed in claim 6, wherein the material of this first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
9. composite capacitor as claimed in claim 1, wherein this first negative electrode layer of this through hole electric capacity comprises sandwich construction.
10. composite capacitor as claimed in claim 1, wherein this second negative electrode layer of this through hole electric capacity comprises the composite bed of carbon containing and metal.
11. composite capacitors as claimed in claim 10, the metal wherein in this composite bed comprises silver, copper, gold or nickel.
12. composite capacitors as claimed in claim 1, wherein this second negative electrode layer of this through hole electric capacity comprises pure metal layer.
13. composite capacitors as claimed in claim 1, wherein this second negative electrode layer of this through hole electric capacity comprises and fills up this through hole.
14. composite capacitors as claimed in claim 1, wherein this substrate comprises silicon substrate, organic substrate or insulated substrate.
15. composite capacitors as claimed in claim 1, this through hole wherein in this substrate is arrayed.
16. composite capacitors as claimed in claim 1, wherein the dielectric coefficient of this second dielectric layer of this parallel plate capacitor is 1 ~ 2000.
17. composite capacitors as claimed in claim 1, wherein the thickness of this second dielectric layer of this parallel plate capacitor is 0.1 μm ~ 10 μm.
18. composite capacitors as claimed in claim 1, wherein the material of this second dielectric layer of this parallel plate capacitor be from barium zirconium phthalate, barium strontium titanate, barium titanate, containing a kind of material selected in Pb, Nb, W, Ca, Mg and Zn group that wherein barium titanate of at least one element, lead titanates, lead zirconate titanate, polycrystalline lanthanum modification lead zirconate titanate, lead niobate and derivative thereof and lead tungstate and derivative thereof form.
19. composite capacitors as claimed in claim 1, wherein this first conductor layer or this second conductor layer are identical electric conducting material with this anode layer.
20. composite capacitors as claimed in claim 1, wherein the metal of this first conductor layer or this second conductor layer and this second negative electrode layer is identical electric conducting material.
21. composite capacitors as claimed in claim 1, wherein this substrate comprises metal substrate.
22. composite capacitors as claimed in claim 21, wherein a part for this metal substrate is as this first conductor layer of this parallel plate capacitor.
23. composite capacitors as claimed in claim 21, wherein a part for this metal substrate is as this anode layer of this through hole electric capacity.
24. composite capacitors as claimed in claim 1, wherein the shape of this parallel plate capacitor comprises hexagon, circle, square or annular.
25. composite capacitors as claimed in claim 1, wherein the shape of this through hole electric capacity comprises hexagon, circle, square or annular.
26. 1 kinds of composite capacitors, comprising:
Substrate, this substrate has multiple through hole;
At least one through hole electric capacity, is arranged at least one through hole, and this through hole electric capacity at least comprises:
Anode layer, is at least positioned at the inner surface of this through hole, and wherein this anode layer is a loose structure to the inner surface being less than through hole;
First dielectric layer, is at least positioned on this loose structure of this anode layer;
First negative electrode layer, is covered in the surface of this first dielectric layer; And
Second negative electrode layer, is covered in the surface of this first negative electrode layer; And
At least one parallel plate capacitor, to be positioned on this substrate around this through hole electric capacity and with this through hole Capacitance parallel connection, wherein this parallel plate capacitor at least comprises:
First conductor layer, and this anode layer of this first conductor layer and this through hole electric capacity is electrically connected to the one side of this substrate;
Second conductor layer, is positioned on this first conductor layer, and this second negative electrode layer of this second conductor layer and this through hole electric capacity is electrically connected to the another side of this substrate, makes the one pole of this parallel plate capacitor and this through hole electric capacity pull out surface at this substrate; And
Second dielectric layer, between this first conductor layer and this second conductor layer.
27. composite capacitors as claimed in claim 26, wherein the material of this anode layer of this through hole electric capacity comprises aluminium, tantalum, niobium or columbium monoxide.
28. composite capacitors as claimed in claim 26, wherein this first dielectric layer of this through hole electric capacity extends to this one side of this substrate beyond this through hole and this another side of this substrate.
29. composite capacitors as claimed in claim 26, wherein the material of this first negative electrode layer of this through hole electric capacity comprises organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material.
30. composite capacitors as claimed in claim 29, wherein this inorganic semiconductor comprises manganese dioxide.
31. composite capacitors as claimed in claim 29, wherein this organic semiconductor comprises the wrong salt of Charger transfer or conducting polymer.
32. composite capacitors as claimed in claim 31, wherein this conducting polymer comprises polypyrrole, polythiophene or polyaniline.
33. composite capacitors as claimed in claim 31, wherein the material of this first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
34. composite capacitors as claimed in claim 26, wherein this first negative electrode layer of this through hole electric capacity comprises sandwich construction.
35. composite capacitors as claimed in claim 26, wherein this second negative electrode layer of this through hole electric capacity comprises the composite bed of carbon containing and metal.
36. composite capacitors as claimed in claim 35, the metal wherein in this composite bed comprises silver, copper, gold or nickel.
37. composite capacitors as claimed in claim 26, wherein this second negative electrode layer of this through hole electric capacity comprises pure metal layer.
38. composite capacitors as claimed in claim 26, wherein this second negative electrode layer of this through hole electric capacity comprises and fills up this through hole.
39. composite capacitors as claimed in claim 26, wherein this substrate comprises silicon substrate, organic substrate or insulated substrate.
40. composite capacitors as claimed in claim 26, this through hole wherein in this substrate is arrayed.
41. composite capacitors as claimed in claim 26, wherein the dielectric coefficient of this second dielectric layer of this parallel plate capacitor is 1 ~ 2000.
42. composite capacitors as claimed in claim 26, wherein the thickness of this second dielectric layer of this parallel plate capacitor is 0.1 μm ~ 10 μm.
43. composite capacitors as claimed in claim 26, wherein the material of this second dielectric layer of this parallel plate capacitor be from barium zirconium phthalate, barium strontium titanate, barium titanate, containing a kind of material selected in Pb, Nb, W, Ca, Mg and Zn group that wherein barium titanate of at least one element, lead titanates, lead zirconate titanate, polycrystalline lanthanum modification lead zirconate titanate, lead niobate and derivative thereof and lead tungstate and derivative thereof form.
44. composite capacitors as claimed in claim 26, wherein this first conductor layer or this second conductor layer are identical electric conducting material with this anode layer.
45. composite capacitors as claimed in claim 26, wherein the metal of this first conductor layer or this second conductor layer and this second negative electrode layer is identical electric conducting material.
46. composite capacitors as claimed in claim 26, wherein this substrate comprises metal substrate.
47. composite capacitors as claimed in claim 46, wherein a part for this metal substrate is as this first conductor layer of this parallel plate capacitor.
48. composite capacitors as claimed in claim 46, wherein a part for this metal substrate is as this anode layer of this through hole electric capacity.
49. composite capacitors as claimed in claim 26, wherein the shape of this parallel plate capacitor comprises hexagon, circle, square or annular.
50. composite capacitors as claimed in claim 26, wherein the shape of this through hole electric capacity comprises hexagon, circle, square or annular.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103054516A CN101471181A (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007103054516A Division CN101471181A (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
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| CN102693975A CN102693975A (en) | 2012-09-26 |
| CN102693975B true CN102693975B (en) | 2015-09-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007103054516A Pending CN101471181A (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
| CN201210188751.1A Active CN102693975B (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007103054516A Pending CN101471181A (en) | 2007-12-28 | 2007-12-28 | Composite capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI394189B (en) | 2009-06-04 | 2013-04-21 | Ind Tech Res Inst | Capacitor substrate structure |
| CN101964254B (en) * | 2009-07-23 | 2013-04-17 | 财团法人工业技术研究院 | Capacitor substrate structure |
| KR101495971B1 (en) * | 2010-04-02 | 2015-02-25 | 인텔 코오퍼레이션 | Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same |
| DE102010043748A1 (en) | 2010-11-11 | 2012-05-16 | Robert Bosch Gmbh | Method for producing a capacitive storage element, storage element and its use |
| CN107591256B (en) * | 2017-07-14 | 2019-07-19 | 电子科技大学 | A kind of board-like array capacitor chip of large capacity gradient and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6446317B1 (en) * | 2000-03-31 | 2002-09-10 | Intel Corporation | Hybrid capacitor and method of fabrication therefor |
| US6558436B1 (en) * | 1997-05-02 | 2003-05-06 | Cm Components, Inc. | Multiple anode capacitor |
| US6678144B2 (en) * | 2001-03-01 | 2004-01-13 | Shinko Electric Industries Co., Ltd | Capacitor, circuit board with built-in capacitor and method for producing the same |
| CN1476618A (en) * | 2001-09-05 | 2004-02-18 | ά | Cascade capacitor |
-
2007
- 2007-12-28 CN CNA2007103054516A patent/CN101471181A/en active Pending
- 2007-12-28 CN CN201210188751.1A patent/CN102693975B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6558436B1 (en) * | 1997-05-02 | 2003-05-06 | Cm Components, Inc. | Multiple anode capacitor |
| US6446317B1 (en) * | 2000-03-31 | 2002-09-10 | Intel Corporation | Hybrid capacitor and method of fabrication therefor |
| US6678144B2 (en) * | 2001-03-01 | 2004-01-13 | Shinko Electric Industries Co., Ltd | Capacitor, circuit board with built-in capacitor and method for producing the same |
| CN1476618A (en) * | 2001-09-05 | 2004-02-18 | ά | Cascade capacitor |
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| CN102693975A (en) | 2012-09-26 |
| CN101471181A (en) | 2009-07-01 |
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