JP4973023B2 - Thin film capacitor and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thin film capacitor and a manufacturing method thereof, and more particularly to a thin film capacitor having a large area and a high capacity and a manufacturing method thereof.

  Conventionally, a large number of capacitors are mounted around an LSI (Large Scale Integration) in order to prevent noise on a mounting substrate on which a semiconductor element is mounted.

  When an abrupt load i due to a clock operation or the like is applied to the LSI, a voltage drop ΔV shown in the following Equation 1 is generated by the resistance R and the inductance L existing in the wiring between the power supply and the LSI.

  Here, the sign of L is-because the induced electromotive force is generated so as to cancel out the instantaneously generated current. Therefore, the voltage drop ΔV increases as the wiring R, L and the load fluctuation di increase and the load fluctuation time dt decreases.

  Recently, the clock frequency of LSI has become high speed exceeding several hundred MHz. The rise time tr of the pulse waveform in the digital circuit is equivalent to the load fluctuation time dt. As the clock frequency increases, the rise time tr decreases, so the voltage drop ΔV increases.

In order to reduce such a voltage drop, it is effective to connect a capacitor in parallel between the power supply line and the ground line of the LSI. This capacitor is generally referred to as a decoupling capacitor. If the clock frequency of the LSI increases, it will not be possible to compensate for the voltage that has temporarily dropped when the load fluctuates from the power supply in time, so by supplying charges from a decoupling capacitor connected near the LSI, To compensate for the voltage drop. However, in this case, the voltage drop ΔV shown in the above equation 1 occurs due to the influence of the equivalent series resistance (ESR), equivalent series inductance (ESL) of the capacitor, the wiring resistance R _l from the capacitor to the LSI, and the wiring inductance L _l. There is a problem.

Further, since the circuit has the above-described ESR, ESL, R _l , and L _l , there is a problem that LC resonance occurs at a certain frequency and does not function effectively as a capacitor at a higher frequency. . Therefore, when the clock frequency of the LSI is increased, it is necessary to increase the LC resonance frequency f of the decoupling capacitor. The LC resonance frequency f of the decoupling capacitor is expressed by the following formula 2.

For this reason, in order to increase the LC resonance frequency f of the decoupling capacitor, it is necessary to select a capacitor having a small C and a small L as the decoupling capacitor. As the decoupling capacitor, a multilayer ceramic capacitor having a capacitance of 0.1 μF or less with relatively good high frequency characteristics has been often used. This is because the multilayer ceramic capacitor has an advantage that not only the ESR is small but also the ESL is small compared to the electrolytic capacitor. However, since C is small, it is necessary to connect many capacitors in parallel in order to charge the necessary charge. However, even if a capacitor is connected in parallel, the LC resonance frequency f of the decoupling capacitor does not change, and sufficient characteristics cannot be obtained due to R _l and L _l of the wiring from the capacitor to the LSI. Taking a multilayer ceramic capacitor, which has been conventionally used as a decoupling capacitor for compensating for a voltage drop ΔV of an LSI, as an example, the capacitance C = 0.01 μF even if the wiring R _l and L _l are ignored. ESL = 0.4 nH. From the above equation 2, it can be seen that the resonance frequency f of this capacitor is less than about 80 MHz.

  As described in Non-Patent Document 1, it is known that ESL decreases as the thickness of the capacitor dielectric decreases. Therefore, a chip carrier type capacitor (for example, Patent Document 1) and a substrate built-in capacitor (for example, Patent Document 2 and Patent Document 3) are researched and developed as thin film capacitors that can reduce inductance by short-distance connection with a semiconductor element and have excellent high frequency characteristics. Has been. However, in order to form a high-capacitance capacitor of the μF order that can cope with the recent increase in the speed of LSIs reaching the GHz order, an area equal to or larger than the area of the LSI is required. When a thin film is formed, there is a problem that the frequency of occurrence of defects increases.

  FIG. 35 (a) is a schematic top view showing a circuit board incorporating a capacitor disclosed in Patent Document 4, and FIG. 35 (b) is a schematic cross-sectional view. The thin film capacitor disclosed in Patent Document 4 is configured by laminating a lower electrode 15, a dielectric thin film 18 having a perovskite structure, and an upper electrode 19 in this order on a flexible substrate 11. Here, the lower electrode 15 includes an adhesion electrode 12 in contact with the flexible substrate 11, an oxidation resistant electrode 14 in contact with the dielectric thin film 18, and an oxidation resistance electrode 14 provided between the adhesion electrode 12 and the oxidation resistance electrode 14. And a high elastic electrode 13 made of a material having a high Young's modulus. However, when an LSI-sized large-area capacitor is formed, there is a problem that a short circuit may occur due to a defect in the dielectric film due to generation of particles or the like in the film forming process.

JP 2002-8942 A JP 2004-056097 A JP 2005-159259 A JP 2004-056097 A JP 2003-069185 A “Nikkei Electronics” 1999.4.19, pages 144 to 156

In order to solve this problem, Patent Document 5 discloses a capacitor using an anodic oxide film as a dielectric layer in order to easily form a capacitor having a large area. FIG. 36 is a schematic cross-sectional view of a circuit board incorporating a capacitor disclosed in Patent Document 5. The capacitor 50 disclosed in Patent Document 5 includes conductive substrates 31 and 35, a first conductive layer 32 sequentially stacked on at least one surface of the substrates 31 and 35, a dielectric layer 33, The second conductive layer 34 is used, the substrate 31, the substrate 35, and the first conductive layer 32 are used as the first electrode 41, and the second conductive layer 34 is used as the second electrode. The first conductive layer 32 is made of a conductive material containing tantalum, and the dielectric layer 33 is made of a dielectric material containing tantalum oxide formed by oxidizing a part of the first conductive layer 34. Is. However, an anodic oxide film has a relative dielectric constant smaller than that of an oxide thin film having a perovskite structure, and the capacitor disclosed in Patent Document 5 has at least one of a plurality of dielectric layers formed of an oxide having a perovskite structure. Even if it is constituted by a physical thin film, the capacity density is about 1.5 nF / mm ² , and there is a problem that the capacity cannot be increased.

  The present invention has been made in view of such problems, and when a capacitor having a large area with excellent frequency characteristics is formed, even if a short circuit occurs in the thin film dielectric, the present invention is positioned above the thin film dielectric. A thin film that can repair short-circuit defects by anodizing a conductor that can be anodized, thereby creating an anodized film as an insulator, and forming a capacitor using the anodized film as a dielectric. A capacitor and a method for manufacturing the same are provided.

  The thin film capacitor according to the present invention includes a lower electrode, a thin film dielectric layer formed on the lower electrode, a first upper electrode formed on the thin film dielectric layer, and the first upper electrode. A conductor layer made of an anodizable conductor formed on the electrode, and a second upper electrode formed on the conductor layer, the lower electrode being one electrode, and the first electrode The upper electrode, the conductor layer, and the second upper electrode are used as the other electrode, and the thin film dielectric layer is used as a dielectric to form a capacitor.

  As a result, when a defect exists in the thin film dielectric and a short circuit occurs, the anodizable conductor located above the thin film dielectric is anodized, thereby creating an anodic oxide film as an insulator. By forming a capacitor using this anodic oxide film as a dielectric, it is possible to repair a short circuit defect. Further, since the upper electrode is formed above the conductor layer, ESR can be reduced and connection reliability with the power supply line or ground line of the LSI can be improved.

  Another thin film capacitor according to the present invention includes a lower electrode, a thin film dielectric layer formed on the lower electrode, a first upper electrode formed on the thin film dielectric layer, A conductor layer made of an anodizable conductor formed on the first upper electrode, an anodized film formed on the conductor layer, and a second upper part formed on the anodized film An electrode, the lower electrode, the thin film dielectric layer, the first upper electrode and the conductor layer as one electrode, the second upper electrode as the other electrode, and the anodic oxide film A capacitor is formed as a dielectric.

  Still another thin film capacitor according to the present invention includes a lower electrode, a thin film dielectric layer formed on the lower electrode, and a conductor layer comprising an anodizable conductor formed on the thin film dielectric layer. And an upper electrode formed on the conductor layer, the lower electrode as one electrode, the conductor layer and the upper electrode as the other electrode, and the thin film dielectric layer as a dielectric A capacitor is formed.

  Still another thin film capacitor according to the present invention includes a lower electrode, a thin film dielectric layer formed on the lower electrode, and a conductor layer comprising an anodizable conductor formed on the thin film dielectric layer. And an anodic oxide film formed on the conductor layer, and an upper electrode formed on the anodic oxide film, the lower electrode, the thin film dielectric layer and the conductor layer being one of A capacitor is formed using an electrode, the upper electrode as the other electrode, and the anodic oxide film as a dielectric.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. The cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, An upper electrode formed on the thin film dielectric layer, and a conductor layer made of an anodizable conductor formed on the upper electrode, and each conductor layer of the plurality of cells includes Connected by a connection electrode formed on a conductor layer, and in each cell, the lower electrode is one electrode, the upper electrode, the conductor layer and the connection electrode are other electrodes, and the thin film dielectric layer is a dielectric. A capacitor is formed as a body.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. At least one first cell of the plurality of cells includes a lower electrode and a lower electrode. A thin-film dielectric layer formed thereon, an upper electrode formed on the thin-film dielectric layer, a conductor layer made of an anodizable conductor formed on each upper electrode, and the conductor layer And the other second cell is formed on the lower electrode, the thin film dielectric layer formed on the lower electrode, and the thin film dielectric layer. An upper electrode, and a conductor layer made of an anodizable conductor formed on the upper electrode, on the anodized film of the first cell and on the conductor layer of the second cell. A connection electrode is formed in common, and the first cell A capacitor is configured with the electrode, the thin film dielectric layer, the upper electrode and the conductor layer as one electrode, the connection electrode as the other electrode, and the anodic oxide film as a dielectric, and the second cell has the A capacitor is formed with the lower electrode as one electrode, the upper electrode, the conductor layer and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric, and each cell is connected by the connection electrode. It is characterized by.

  By being divided into a plurality of cells, the conductive layer of only the cell in which the short circuit has occurred is anodized, and the cell in which the anodized film is not formed maintains the high capacity of the thin film dielectric. As a result, the capacity obtained by connecting a plurality of cells in parallel is larger than that of a capacitor composed of cells in which all cells have an anodized film as a dielectric film.

  The plurality of cells may have a common lower electrode and a common thin film dielectric, and the upper electrode may be separated by the element isolation film.

  The plurality of cells may have a common lower electrode, and the thin film dielectric may be separated by the element isolation film.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. The cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A first upper electrode formed on the thin film dielectric layer, a conductor layer made of an anodizable conductor formed on the first upper electrode, and formed on the conductor layer A second upper electrode, wherein each second upper electrode of the plurality of cells is connected by a connection electrode formed on the second upper electrode, and in each cell, the lower electrode is connected to the second upper electrode. A capacitor is configured with one electrode, the first upper electrode, the conductor layer, the second upper electrode, and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. And

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. At least one first cell of the plurality of cells includes a lower electrode and a lower electrode. A conductor layer comprising a thin film dielectric layer formed thereon, a first upper electrode formed on the thin film dielectric layer, and an anodizable conductor formed on the first upper electrode And an anodic oxide film formed on the conductor layer, and a second upper electrode formed on the anodic oxide film. The other second cell has a lower electrode and a lower electrode. A thin film dielectric layer formed on the electrode, a first upper electrode formed on the thin film dielectric layer, and an anodizable conductor formed on the first upper electrode A conductor layer and a second upper electrode formed on the conductor layer; A connection electrode is formed in common on the second upper electrode of the first cell and the second upper electrode of the second cell, and the first cell includes the lower electrode and the thin film dielectric layer. A capacitor is formed by using the first upper electrode and the conductor layer as one electrode, the second upper electrode and the connection electrode as the other electrode, and the anodic oxide film as a dielectric, and the second cell. The capacitor is configured with the lower electrode as one electrode, the first upper electrode, the conductor layer, the second upper electrode and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. Each cell is connected by the connection electrode.

  The plurality of cells may have a common lower electrode and a common thin film dielectric, and the first upper electrode may be separated by the element isolation film.

  The plurality of cells may have a common lower electrode, and the thin film dielectric may be separated by the element isolation film.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. The cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A conductor layer made of an anodizable conductor formed on the thin film dielectric layer, and each conductor layer of the plurality of cells is connected by a connection electrode formed on the conductor layer. In each cell, the lower electrode is used as one electrode, the conductor layer and the connection electrode are used as the other electrode, and the capacitor is formed using the thin film dielectric layer as a dielectric.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. At least one first cell of the plurality of cells includes a lower electrode and a lower electrode. A thin film dielectric layer formed thereon, a conductor layer made of an anodizable conductor formed on the thin film dielectric layer, and an anodized film formed on the conductor layer; The other second cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, and a conductor layer made of an anodizable conductor formed on the thin film dielectric layer. A connection electrode is formed in common on the anodic oxide film of the first cell and the conductor layer of the second cell, the first cell comprising the lower electrode, the thin film dielectric layer, and The conductor layer is one electrode and the connection electrode is the other electrode. And the second cell has the lower electrode as one electrode, the conductor layer and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. A capacitor is formed as a body, and each cell is connected by the connection electrode.

  The plurality of cells may have a common lower electrode and a common thin film dielectric, and the conductor layer may be separated by the element isolation film.

  The plurality of cells may have a common lower electrode, and the thin film dielectric may be separated by the element isolation film.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. The cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A conductor layer made of an anodizable conductor formed on the thin-film dielectric layer, and an upper electrode formed on the conductor layer, and each upper electrode of the plurality of cells includes: Connected by a connection electrode formed on the upper electrode, and in each cell, the lower electrode is one electrode, the conductor layer, the upper electrode and the connection electrode are the other electrodes, and the thin film dielectric layer is A capacitor is formed as a dielectric.

  Still another thin film capacitor according to the present invention is a thin film capacitor in which a plurality of cells are separated by an element isolation film. At least one first cell of the plurality of cells includes a lower electrode and a lower electrode. A thin-film dielectric layer formed thereon, a conductor layer made of an anodizable conductor formed on the thin-film dielectric layer, an anodized film formed on the conductor layer, and the anodized film; An upper electrode formed on the film, and the other second cell is formed on the lower electrode, a thin film dielectric layer formed on the lower electrode, and on the thin film dielectric layer A conductor layer made of an anodizable conductor and an upper electrode formed on the conductor layer, on the upper electrode of the first cell and on the upper electrode of the second cell. A connection electrode is formed in common, and the first cell A capacitor is configured with the partial electrode, the thin film dielectric layer and the conductor layer as one electrode, the upper electrode and the connection electrode as the other electrode, and the anodic oxide film as a dielectric, and the second cell has the A capacitor is configured with the lower electrode as one electrode, the conductor layer, the upper electrode and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric, and each cell is connected by the connection electrode. It is characterized by.

  The plurality of cells may have a common lower electrode and a common thin film dielectric, and the conductor layer may be separated by the element isolation film.

  The plurality of cells may have a common lower electrode, and the thin film dielectric may be separated by the element isolation film.

  The anodizable conductor is preferably made of a nitride of a Group 4 or Group 5 metal.

  The method of manufacturing a thin film capacitor according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and a first upper electrode on the thin film dielectric layer. Forming a conductive layer made of an anodizable conductor on the first upper electrode, performing an anodizing process using the lower electrode as an anode, and thereafter And a step of forming a film of the upper electrode.

  As a result, when there is a defect in the thin film dielectric layer and a short circuit occurs, the anodizable conductor located above the thin film dielectric layer is anodized, thereby an anodized film that is an insulator. And forming a capacitor using this anodic oxide film as a dielectric can repair the short-circuit defect.

  In another thin film capacitor manufacturing method according to the present invention, a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and anodization on the thin film dielectric layer are possible. And a step of performing an anodic oxidation process using the lower electrode as an anode, and then a step of forming an upper electrode.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and a plurality of methods on the thin film dielectric layer. A step of forming an upper electrode by dividing the upper electrode, a step of forming a conductor layer made of an anodizable conductor on each of the upper electrodes, and an anodizing process using the lower electrode as an anode, And a step of providing an element isolation film between the upper electrode and the conductor layer to separate it into a plurality of cells, and a step of forming a connection electrode over the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer by dividing the lower electrode into a plurality of portions, and forming each of the thin film dielectrics. Forming an upper electrode on the body layer, forming a conductor layer made of an anodizable conductor on the upper electrode, and performing an anodizing process using the lower electrode as an anode; And a step of providing an element isolation film between the thin film dielectric layer, the upper electrode and the conductor layer to separate it into a plurality of cells, and a step of forming a connection electrode on the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and a plurality of methods on the thin film dielectric layer. Forming a first upper electrode by dividing the film, forming a conductor layer made of an anodizable conductor on each of the first upper electrodes, and an anode having the lower electrode as an anode An element between the step of performing the oxidation treatment, the step of forming the second upper electrode on the conductor layer that has been subjected to the anodization treatment, and the first upper electrode, the conductor layer, and the second upper electrode The method includes a step of providing a separation film to separate the plurality of cells, and a step of forming a connection electrode over the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer by dividing the lower electrode into a plurality of portions, and forming each of the thin film dielectrics. Forming a first upper electrode on the body layer; forming a conductor layer made of an anodizable conductor on the first upper electrode; and an anode having the lower electrode as an anode A step of oxidizing, a step of forming a second upper electrode on the anodized conductor layer, a thin film dielectric layer, a first upper electrode, a conductor layer, and a second upper electrode And a step of separating an element isolation film into a plurality of cells and a step of forming a connection electrode over the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and a plurality of methods on the thin film dielectric layer. A step of forming a conductor layer made of a conductor that can be anodized by dividing into a plurality of steps, a step of performing an anodization process using the lower electrode as an anode, and providing an element isolation film between the conductor layers. The method includes a step of separating into cells and a step of forming a connection electrode over the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer by dividing the lower electrode into a plurality of portions, and forming each of the thin film dielectrics. An element isolation film formed between the thin film dielectric layer and the conductor layer; a step of forming a conductor layer made of an anodizable conductor on the body layer; a step of anodizing with the lower electrode as an anode; And a step of separating the substrate into a plurality of cells and a step of forming a connection electrode over the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer on the lower electrode, and a plurality of methods on the thin film dielectric layer. A step of forming a conductor layer made of a conductor that can be anodized by dividing into a step, a step of anodizing using the lower electrode as an anode, and an upper electrode on the anodized conductor layer The method includes a step of forming a film, a step of providing an element isolation film between the conductor layer and the upper electrode to separate it into a plurality of cells, and a step of forming a connection electrode on the entire surface.

  Still another thin film capacitor manufacturing method according to the present invention includes a step of forming a lower electrode, a step of forming a thin film dielectric layer by dividing the lower electrode into a plurality of portions, and forming each of the thin film dielectrics. Forming a conductor layer made of an anodizable conductor on the body layer; performing an anodizing process using the lower electrode as an anode; and an upper electrode on the anodized conductor layer A step of providing an element isolation film between the thin-film dielectric layer, the conductor layer, and the upper electrode to separate it into a plurality of cells, and a step of forming a connection electrode on the entire surface. It is characterized by that.

  According to the present invention, when a defect exists in the thin film dielectric and a short circuit occurs, the anodizable conductor located above the thin film dielectric is anodized, thereby anodizing as an insulator. By forming a film and forming a capacitor using the anodic oxide film as a dielectric, it is possible to repair a short circuit defect.

  Furthermore, by dividing the capacitor into a plurality of cells, only the conductor layer of the cell in which the short circuit occurred is anodized, and the cell in which the anodized film is not formed maintains the high capacity of the thin film dielectric film, The capacity obtained by connecting the plurality of cells in parallel is larger than that of a capacitor in which all cells are made of cells having an anodized film as a dielectric film.

  Next, embodiments of the present invention will be specifically described with reference to the accompanying drawings. First, a first embodiment of the present invention will be described. 1A and 1B are schematic cross-sectional views of a thin film capacitor according to the present embodiment, and FIGS. 2A and 2B show a method for manufacturing the thin film capacitor according to the present embodiment step by step. 3A to 3C are schematic cross-sectional views showing stepwise the method for manufacturing the thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited.

  In the thin film capacitor according to this embodiment, as shown in FIG. 1A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1 more than the lower electrode 1. A thin film dielectric 2 having a small area is formed, a first upper electrode 3 having a smaller area than the thin film dielectric 2 is formed on the surface of the thin film dielectric 2, and the surface of the first upper electrode 3 is formed on the surface of the thin film dielectric 2. A conductor layer 4 having an area smaller than that of the first upper electrode 3 and capable of anodization is formed, and a second upper electrode 5 is formed on the surface of the conductor layer 4. As a result, as shown in FIG. 1A, the lower electrode 1 is used as one electrode, the first upper electrode 3, the conductor layer 4 and the second upper electrode 5 are used as the other electrode, and the thin film dielectric 2 is formed. A thin film capacitor according to the present embodiment is formed as a dielectric.

  In the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited during the manufacturing process, the lower electrode 1 is formed on the surface of the base substrate (not shown) as shown in FIG. A thin film dielectric 2a having a smaller area than the lower electrode 1 is formed on the surface of the lower electrode 1, and a first upper electrode having a smaller area than the thin film dielectric 2a is formed on the surface of the thin film dielectric 2a. 3 is formed, and a conductor layer 4 having a smaller area than the first upper electrode 3 and capable of anodization is formed on the surface of the first upper electrode 3, and a part of the surface of the conductor layer 4 is an anode. Oxidized to become an anodic oxide film 6, and a second upper electrode 5 is formed on the surface of the anodic oxide film 6. Thereby, as shown in FIG. 1B, the lower electrode 1, the short-circuited thin film dielectric 2a, the first upper electrode 3 and the conductor layer 4 are used as one electrode, and the second upper electrode 5 is used as the other electrode. The thin film capacitor according to the present embodiment using the anodic oxide film 6 as a dielectric is configured.

  As the base substrate (not shown), it is desirable to use a substrate having a high surface smoothness, and a semiconductor substrate such as Si or GaAs or an insulating substrate such as glass, sapphire, ceramics or resin is preferably used. . When a semiconductor substrate such as Si or GaAs is used, it is desirable to form an insulating layer on the surface of the substrate. Further, the size of the base substrate (not shown) is not limited, but considering that it is used as an interposer type capacitor or a substrate built-in capacitor, the thickness is desirably 300 μm or less, and the thickness is approximately 50 μm. If so, it is still desirable.

  The material of the lower electrode layer 1 is not limited, but is preferably a metal or alloy that has excellent adhesion to the base substrate (not shown) and has little diffusion to the thin film dielectric 2, for example, a base substrate (not shown). The film formed in this order from the active metal such as Ti, Cr, Ta or Mo and the high barrier metal such as Pt, Ru, TiN or Au is preferable.

The material of the thin film dielectric 2 is not limited, but it is preferable to use a compound having a perovskite structure having a high dielectric constant. As a compound having a perovskite structure, a part of Sr in SrTiO ₃ or SrTiO ₃ is replaced with Ba (Sr, Ba) TiO ₃ , PbTiO ₃ or BaTiO ₃ as a skeleton and a part of Pb or Ba site (A site) By substituting Sr, Ca, La or the like to make the average valence of the A site divalent, or substituting a part of Ti (B site) with Mg, W, Nb, Zr, Ni, Zn or the like. A composite perovskite compound having a B-site average valence of 4 is desirable. Although the manufacturing method of the thin film dielectric 2 is not limited, For example, it can produce by sputtering, CVD, or a sol gel method.

  The material of the first upper electrode 3 is not limited, but it is desirable that the first upper electrode 3 has little diffusion into the thin film dielectric 2, and for example, Pt, Ru, TiN, or Au is preferably used.

  As the conductor layer 4, a conductor that can be anodized is used. For example, the conductor layer 4 is preferably Zr, Nb, Hf, Ta, Al, or the like from which a highly insulating film can be obtained by anodic oxidation, but considering the barrier property to the thin film dielectric 2, zirconium nitride, nitride More preferred are nitrides of Group 4 or Group 5 metals such as niobium, hafnium nitride or tantalum nitride.

  Further, the material of the second upper electrode 5 is not limited in the same manner. For example, Pt, Ru, TiN, Au, or the like is preferably used, and Ti, Cr, Mo, Ta, or the like is used at the interface with the conductor layer 4. An adhesion layer may be provided.

  Next, the operation of the thin film capacitor according to this embodiment configured as described above will be described. It is assumed that the thin film capacitor according to the present embodiment is connected in parallel to an LSI power supply line (not shown) -ground line (not shown). In the normal state, charges are stored in the lower electrode 1 and the upper electrode 3. For example, when the load on the LSI (not shown) increases rapidly, the power supply circuit (not shown) increases the current supplied to the LSI in accordance with the increase in load. However, since the control cycle of a switching power supply often employed as a power supply circuit (not shown) is usually several μs to several hundred μs, the power supply circuit (not shown) alone follows this sudden increase in load. Can not. While the switching power supply cannot keep up with the sudden increase in load, the thin film capacitor discharges the electric charge that has been stored so far, thereby causing current to flow and compensating for the voltage drop of the LSI.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  As shown in FIG. 2A, first, the lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface. For example, as a base substrate (not shown), a silicon wafer having a surface formed with a thermal oxide film having a thickness of 200 nm can be used, and the lower electrode is formed by DC magnetron sputtering in the order of Ti and Ru from the silicon wafer side. 1 can be formed. The lower electrode 1 can be a square with a side of 20 mm, and the film thicknesses of Ti and Ru can both be 50 nm.

Next, a thin film dielectric 2 is formed on the surface of the lower electrode 1. For example, SrTiO ₃ (STO) added with 5% Mn as a thin film dielectric 2 can be formed on the surface of the lower electrode 1 at 400 ° C. to a thickness of 100 nm by RF sputtering. Next, the first upper electrode 3 is formed on the surface of the thin film dielectric 2. For example, TiN can be formed on the surface of the thin film dielectric 2 as the first upper electrode 3 to a thickness of 100 nm by reactive sputtering using Ti as a target. Next, the conductor layer 4 is formed on the surface of the first upper electrode 3 (step 1). For example, the conductor layer 4 is formed on the surface of the first upper electrode 3 with a thickness of 300 nm at room temperature by DC magnetron sputtering using tantalum nitride, Ta as a target, and nitrogen as a process gas. Can do.

  Next, anodic oxidation is performed using the lower electrode 1 as an anode. For example, anodic oxidation can be performed using a mixed solution of tartaric acid and ethylene glycol. If there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even when anodization is performed with the lower electrode 1 as an anode. Therefore, the conductor layer 4 is not oxidized and an anodized film is not formed.

  Next, as shown in FIG. 2B, a second upper electrode 5 is formed on the surface of the conductor layer 4 (step 2). For example, TiN can be formed as the second upper electrode 5 with a thickness of 100 nm by reactive sputtering using Ti as a target. Thus, the thin film according to the present embodiment in which the lower electrode 1 is one electrode, the first upper electrode 3, the conductor layer 4 and the second upper electrode 5 are the other electrodes, and the thin film dielectric 2 is a dielectric. A capacitor is obtained.

  Further, as shown in FIG. 3A, in step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (step 1), the lower electrode 1 serves as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized, thereby forming an anodic oxide film 6 as an insulator as shown in FIG. Step 2).

  Next, as shown in FIG. 3C, the second upper electrode 5 is formed on the surface of the anodic oxide film 6 (step 3). Accordingly, the lower electrode 1, the short-circuited thin film dielectric 2a, the first upper electrode 3 and the conductor layer 4 are used as one electrode, the second upper electrode 5 is used as the other electrode, and the anodic oxide film 6 is used as the dielectric. The thin film capacitor according to the present embodiment is obtained. A thin film capacitor using the anodic oxide film 6 as a dielectric film has a lower capacity than a thin film capacitor using the thin film dielectric 2 as a dielectric film, but can repair a short circuit failure of the capacitor.

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. As shown in FIGS. 1A and 1B, the first upper electrode 3, the thin film dielectric 2 and the lower electrode 1 are always below the projection surface in the direction perpendicular to the front and back surfaces of the conductor layer 4. The thin film dielectric 2 and the lower electrode 1 are always present below the projection plane in the direction perpendicular to the front and back surfaces of the first upper electrode 3, and are perpendicular to the front and back surfaces of the thin film dielectric 2. Since the lower electrode 1 is always present below the projection surface in the direction, the thin film dielectric 2 has a defect, and when a short circuit occurs, the shorted thin film dielectric with the lower electrode 1 as an anode. An anodized film 6 which is an insulator is formed by anodizing the anodizable conductor layer 4 located above 2a. As shown in FIG. The capacitor is formed. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  In the thin film capacitor according to the present embodiment, since the second upper electrode 5 is formed on the surface of the conductor layer 4, ESR can be reduced, and an LSI power line (not shown) ) Or a ground line (not shown) or the like can be improved.

  Next, a second embodiment of the present invention will be described. 4A and 4B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 5A and 5B show the method for manufacturing the thin film capacitor according to the present embodiment step by step. 6A to 6C are schematic cross-sectional views showing stepwise the method for manufacturing the thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited. 4 to 6, the same components as those in FIGS. 1 to 3 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the thin film capacitor according to this embodiment, as shown in FIG. 4A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1. A thin-film dielectric 2 having a small area is formed, and a conductor layer 4 having a smaller area than the thin-film dielectric 2 and capable of anodization is formed on the surface of the thin-film dielectric 2, and further on the surface of the conductor layer 4 An upper electrode 9 having an area smaller than that of the conductor layer 4 is formed. Thus, as shown in FIG. 4A, the thin film according to the present embodiment in which the lower electrode 1 is one electrode, the conductor layer 4 and the upper electrode 9 are the other electrodes, and the thin film dielectric 2 is a dielectric. A capacitor is configured.

  In the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited during the manufacturing process, the lower electrode 1 is formed on the surface of the base substrate (not shown) as shown in FIG. The thin film dielectric 2a having a smaller area than the lower electrode 1 is formed on the surface of the lower electrode 1, and the area of the thin film dielectric 2a is smaller than that of the thin film dielectric 2a and can be anodized. A conductor layer 4 is formed, a part of the surface of the conductor layer 4 is anodized to become an anodized film 6, and an upper electrode 9 is formed on the surface of the anodized film 6. Accordingly, as shown in FIG. 4B, the lower electrode 1, the short-circuited thin film dielectric 2a and the conductor layer 4 are used as one electrode, the upper electrode 9 is used as the other electrode, and the anodic oxide film 6 is used as the dielectric. The thin film capacitor according to the present embodiment is configured.

  The material of the upper electrode 9 is not limited. However, it is desirable that the material of the upper electrode 9 is less diffused into the thin film dielectric 2, and Pt, Ru, TiN, Au, or the like is preferably used.

  The operation of the thin film capacitor according to the present embodiment is the same as the operation of the thin film capacitor according to the first embodiment described above.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  As shown in FIG. 5A, first, the lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface. Next, a thin film dielectric 2 is formed on the surface of the lower electrode 1. Next, the conductor layer 4 is formed on the surface of the thin film dielectric 2 (step 1).

  Next, anodic oxidation is performed using the lower electrode 1 as an anode. If there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even when anodization is performed with the lower electrode 1 as an anode. Therefore, the conductor layer 4 is not oxidized and an anodized film is not formed. Next, as shown in FIG. 5B, the upper electrode 9 is formed on the surface of the conductor layer 4 (step 2). Thereby, the thin film capacitor according to the present embodiment is obtained.

  In addition, as shown in FIG. 6A, in Step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When the oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized, thereby forming an anodic oxide film 6 as an insulator as shown in FIG. Step 2).

  Next, as shown in FIG. 6C, an upper electrode 9 is formed on the surface of the anodic oxide film 6 (step 3). As a result, a thin film capacitor is formed using the lower electrode 1, the short-circuited thin film dielectric 2a and the conductor layer 4 as one electrode, the upper electrode 9 as the other electrode, and the anodic oxide film 6 as a dielectric. A thin film capacitor using the anodic oxide film 6 as a dielectric film has a lower capacity than a thin film capacitor using the thin film dielectric 2 as a dielectric film, but can repair a short circuit failure of the capacitor.

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. Further, as shown in FIGS. 4A and 4B, the thin film dielectric 2 and the lower electrode 1 exist below the projection plane in the direction perpendicular to the front and back surfaces of the conductor layer 4, and the thin film dielectric 2, the lower electrode 1 is always present below the projection surface in the direction perpendicular to the front and back surfaces. Therefore, when the thin film dielectric 2 has a defect and a short circuit occurs, the lower electrode 1 is As shown in FIG. 4B, an anodized film 6 is formed by anodizing the anodizable conductor layer 4 located above the short-circuited thin film dielectric 2a. A capacitor using the anodic oxide film 6 as a dielectric is formed. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  Next, a third embodiment of the present invention will be described. 7A and 7B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 8A and 8B show the thin film capacitor manufacturing method according to the present embodiment step by step. FIG. 9A to FIG. 9C are schematic cross-sectional views showing stepwise the method of manufacturing the thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited. 7 to 9, the same components as those in FIGS. 1 to 6 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the thin film capacitor according to this embodiment, as shown in FIG. 7A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1. A thin-film dielectric 2 having a small area is formed, and an upper electrode 9 having a smaller area than the thin-film dielectric 2 is formed on the surface of the thin-film dielectric 2 by dividing it into two parts. Conductor layers 4 having a smaller area than the upper electrode 9 and capable of anodic oxidation are formed on the surface of the upper electrode 9, and the two divided cells are insulated and separated by the insulating film 7 as an element isolation film. The conductive layer 4 of each cell is connected by a parallel connection electrode 8 formed on the conductive layer 4. Thus, in each cell, the lower electrode 1 is used as one electrode, the upper electrode 9, the anodizable conductor layer 4 and the parallel connection electrode 8 are used as the other upper electrode, and the thin film dielectric 2 is used as the dielectric. A thin film capacitor according to the embodiment is configured.

  Further, in the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited in the manufacturing process, as shown in FIG. 7B, the second corresponding to the portion of the thin film dielectric 2 that is not short-circuited. In the first cell corresponding to the short-circuited portion of the thin film dielectric 2, the lower electrode is formed on the surface of the base substrate (not shown). 1 is formed, a thin film dielectric 2a having a smaller area than the lower electrode 1 is formed on the surface of the lower electrode 1, and an upper electrode 9 having a smaller area than the thin film dielectric 2a is formed on the surface of the thin film dielectric 2a. The conductor layer 4 having a smaller area than the upper electrode 9 and capable of anodic oxidation is formed on the surface of the upper electrode 9 formed by dividing into two parts. Part of the surface of layer 4 is anodized and positive It has become an oxide film 6.

  The cells divided into two are insulated and separated by an insulating film 7, and a parallel connection electrode 8 is formed in common on the anodic oxide film 6 of the first cell and the conductor layer 4 of the second cell. In one cell, a capacitor is configured with the lower electrode 1, the thin film dielectric 2a, the upper electrode 9 and the conductor layer 4 as one electrode, the parallel connection electrode 8 as the other electrode, and the anodic oxide film 6 as the dielectric. In the two cells, a capacitor is formed by using the lower electrode 1 as one electrode, the upper electrode 9, the conductor layer 4 that can be anodized, and the parallel connection electrode 8 as the other upper electrode, and the thin film dielectric 2 as a dielectric. Each cell is connected by a parallel connection electrode 8. Thereby, the thin film capacitor according to the present embodiment is configured.

  The material of the parallel connection electrode 8 is not limited, but using a low resistance material such as Cu, Al, or Au is preferable because it has the effect of reducing the ESR of the capacitor. Further, the parallel connection electrode 8 may have a multilayer structure, and a connection electrode may be used by using a film suitable for connection on the outermost surface.

  The size and shape of the cell divided into two are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 8A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and a thin film dielectric 2 is formed on the surface of the lower electrode 1. Next, two upper electrodes 9 are formed on the surface of the thin film dielectric 2, and a conductor layer 4 that can be anodized is formed on the surfaces of the two upper electrodes 9 (step 1). .

  Then, anodic oxidation is performed using the lower electrode 1 as an anode. If there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even when anodization is performed with the lower electrode 1 as an anode. Therefore, the conductor layer 4 is not oxidized and an anodized film is not formed.

  Next, as shown in FIG. 8B, an insulating film 7 for insulating and separating the first upper electrode 3 and the conductor layer 4 divided into two is formed. A parallel connection electrode 8 is formed on the entire surface from above the opening, whereby the thin film capacitor according to the present embodiment in which two cells are connected in parallel is obtained (step 2).

  Further, as shown in FIG. 9A, in Step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When oxidation is performed, only in the cell in which the short circuit has occurred, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized. As a result, as shown in FIG. An oxide film 6 is formed (step 2). Then, as shown in FIG. 9C, an insulating film 7 for insulating and separating the first upper electrode 3 and the conductor layer 4 divided into two is formed, and this insulating film The parallel connection electrode 8 is formed over the entire surface of the opening 7, so that the cell in which the anodized film 6 is not formed maintains the high capacity of the thin film dielectric 2, and the cell in which the short circuit occurs is A capacitor using the anodic oxide film 6 as a dielectric is formed, and although the capacity is inferior to that of a thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired (step 3).

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. Further, as shown in FIGS. 7A and 7B, the thin film dielectric 2 and the lower electrode 1 always exist below the projection plane in the direction perpendicular to the front and back surfaces of the conductor layer 4, and the thin film dielectric Since the lower electrode 1 is always present below the projection surface in the direction perpendicular to the front and rear surfaces of the body 2, the defect is present in the thin film dielectric 2. As an anode, an anodized film 6 that is an insulator is formed by anodizing the anodizable conductor layer 4 located above the thin film dielectric 2, and as shown in FIG. A capacitor using oxide film 6 as a dielectric is formed. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  In the present embodiment, since the cell is divided into two, only the cell in which the short circuit has occurred can be repaired. Therefore, the cell in which the anodic oxide film 6 is not formed has a high capacity of the thin film dielectric 2. Therefore, the capacity obtained by connecting these two cells in parallel is larger than that of a capacitor in which all cells are made of cells having an anodized film as a dielectric film. Further, by using a film suitable for connection to the parallel connection electrode 8, it is possible to improve connection reliability with an LSI power supply line (not shown) or a ground line (not shown).

  In the present embodiment, an example is shown in which the cell is divided into two, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a fourth embodiment of the present invention will be described. FIG. 10 is a schematic cross-sectional view of the thin film capacitor according to the present embodiment. FIGS. 11A and 11B are schematic cross-sectional views showing the thin film capacitor manufacturing method according to the present embodiment step by step. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor based on this embodiment when the thin film dielectric 2 is short-circuited. 10 to 12, the same components as those in FIGS. 1 to 9 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the third embodiment described above, two capacitor cells have a common lower electrode 1 and thin film dielectric 2, whereas in this embodiment, as shown in FIG. Is also divided into two parts and insulated and separated by the insulating film 7, and the other structure is the same as that of the third embodiment.

  The size and shape of the cell divided into two are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 11A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and two thin film dielectrics are formed on the surface of the lower electrode 1. The body 2 is formed, and then the upper electrode 9 is formed on the surface of each of the two thin film dielectrics 2, and the anodizable conductor layer 4 is formed on the surface of the upper electrode 9 (step). 1). Then, the thin film capacitor according to the present embodiment in which two cells shown in FIG. 11B are connected in parallel is obtained by the same manufacturing method as the thin film capacitor according to the third embodiment described above (step). 2).

  In addition, as shown in FIG. 12A, in Step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized only in the cell where the short circuit occurs, and as a result, as shown in FIG. An oxide film 6 is formed (step 2). Then, as shown in FIG. 12C, an insulating film 7 for insulating and separating the thin film dielectric 2, the upper electrode 9, and the conductor layer 4 divided into two is formed. The parallel connection electrode 8 is formed over the entire surface of the opening of the insulating film 7, whereby the cell in which the anodic oxide film 6 is not formed is a cell in which the high capacity of the thin film dielectric 2 is maintained and a short circuit occurs. In this case, a capacitor using the anodic oxide film 6 as a dielectric is formed, and although the capacity is inferior to that of a thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired (step 3).

  The thin film capacitor according to the present embodiment has operations and effects similar to those of the thin film capacitor according to the third embodiment described above.

  In the present embodiment, an example is shown in which the cell is divided into two, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a fifth embodiment of the present invention will be described. 13A and 13B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 14A to 14C show the thin film capacitor manufacturing method according to the present embodiment step by step. 15A to 15D are schematic cross-sectional views showing stepwise a method for manufacturing a thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited, and FIG. FIG. 16 is a schematic top view of FIG. 13 to 16, the same components as those in FIGS. 1 to 12 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the thin film capacitor according to this embodiment, as shown in FIG. 13A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1. A thin-film dielectric 2 having a small area is formed, and a first upper electrode 3 having a smaller area than the thin-film dielectric 2 is formed on the surface of the thin-film dielectric 2 by being divided into four parts. Conductive layers 4 having a smaller area than the first upper electrode 3 and capable of anodic oxidation are formed on the surface of the first upper electrode 3 formed in this manner, and further divided into four. A second upper electrode 5 having an area smaller than that of the conductor layer 4 is formed on the surface of the conductor layer 4. The first upper electrode 3, the conductor layer 4, and the second upper electrode 5 divided into four parts are formed. The cells of the capacitor formed are insulated and separated by the insulating film 7, and the second upper current of each cell is separated. 5 are connected by parallel connection electrode 8 formed on the second upper electrode 5. Thus, in each cell, the lower electrode 1 is used as one electrode, the first upper electrode 3, the conductor layer 4 capable of anodic oxidation, the second upper electrode 5 and the parallel connection electrode 8 are used as the other electrodes, and the thin film The thin film capacitor according to the present embodiment is configured using the dielectric 2 as a dielectric.

  Further, in the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited in the manufacturing process, as shown in FIG. In the first cell corresponding to the short-circuited portion of the thin film dielectric 2, the lower electrode is formed on the surface of the base substrate (not shown). 1 is formed, a thin film dielectric 2a having a smaller area than the lower electrode 1 is formed on the surface of the lower electrode 1, and a first area having a smaller area than the thin film dielectric 2a is formed on the surface of the thin film dielectric 2a. The upper electrode 3 is divided into four parts, and a conductor having a smaller area than the first upper electrode 3 and capable of anodizing is formed on the surface of the first upper electrode 3 formed by dividing the upper electrode 3 into four parts. Each layer 4 is formed and divided into four shapes. A part of the surface of the conductor layer 4 is anodized to form the anodized film 6, and the second upper electrode 5 having an area smaller than that of the conductor layer 4 is formed on the surface of the anodized film 6. Yes.

  Then, the cells divided into four are insulated and separated by the insulating film 7, and the parallel connection electrode 8 is commonly formed on the second upper electrode 5 of the first cell and the second upper electrode 5 of the second cell. In the first cell, the lower electrode 1, the thin film dielectric 2a, the first upper electrode 3, and the conductor layer 4 are used as one electrode, and the second upper electrode 5 and the parallel connection electrode 8 are used as the other electrode. In the second cell, the lower electrode 1 is used as one electrode, the first upper electrode 3, the conductor layer 4 that can be anodized, and the second upper electrode 5 in the second cell. In addition, a capacitor is configured with the parallel connection electrode 8 as the other electrode and the thin film dielectric 2 as the dielectric, and the cells are connected by the parallel connection electrode 8. Thereby, the thin film capacitor according to the present embodiment is configured.

  The size and shape of the cell divided into four are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 14A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and a thin film dielectric 2 is formed on the surface of the lower electrode 1. The four first upper electrodes 3 are formed on the surface of the thin film dielectric 2, and the anodizable conductor layers 4 are formed on the surfaces of the four first upper electrodes 3, respectively. (Step 1).

  Then, anodic oxidation is performed using the lower electrode 1 as an anode. If there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even when anodization is performed with the lower electrode 1 as an anode. Therefore, the conductor layer 4 is not oxidized and an anodized film is not formed.

  Next, as shown in FIG. 14B, the second upper electrode 5 is formed on the surface of each of the four conductor layers 4 (step 2). Then, as shown in FIG. 14C, an insulating film 7 for insulating and separating the first upper electrode 3, the conductor layer 4, and the second upper electrode divided into four parts is formed. Then, the parallel connection electrode 8 is formed over the entire surface of the opening of the insulating film 7, thereby obtaining the thin film capacitor according to the present embodiment in which four cells are connected in parallel (step 3).

  As shown in FIG. 15A, in step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (step 1), the anode is formed using the lower electrode 1 as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized only in the cell where the short circuit occurs, and as a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIGS. 15C and 16, the second upper electrode 5 is formed (step 3). Then, as shown in FIG. 15 (d), an insulating film 7 for insulating and separating the first upper electrode 3, the conductor layer 4 and the second upper electrode divided into four parts is formed, A parallel connection electrode 8 is formed over the entire surface of the opening of the insulating film 7, whereby a cell in which the anodic oxide film 6 is not formed maintains the high capacity of the thin film dielectric 2 and causes a short circuit. In the cell, a capacitor having an anodic oxide film 6 as a dielectric is formed, and although the capacity is inferior to that of a thin film capacitor having a thin film dielectric 2 as a dielectric film, the short circuit of the capacitor can be repaired (step 4). .

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. Further, as shown in FIGS. 13A and 13B, the thin film dielectric 2 and the lower electrode 1 always exist below the projection plane in the direction perpendicular to the front and back surfaces of the conductor layer 4, and the thin film dielectric In the case where a defect exists in the body 2 and a short circuit occurs, an insulator is obtained by anodizing the anodizable conductor layer 4 located above the thin film dielectric 2a with the lower electrode 1 as an anode. An anodic oxide film 6 is formed, and a capacitor using the anodic oxide film 6 as a dielectric is formed as shown in FIG. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  In the present embodiment, since the cell is divided into four, only the cell in which the short circuit has occurred can be repaired. Therefore, the cell in which the anodic oxide film 6 is not formed has a high capacity of the thin film dielectric 2. Therefore, the capacity obtained by connecting these four cells in parallel is larger than that of a capacitor in which all cells are made of cells having an anodized film as a dielectric film.

  In the present embodiment, the ESR can be reduced by forming the second upper electrode 5 on the surface of the conductor layer 4.

  In the present embodiment, an example is shown in which the cell is divided into four cells, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a sixth embodiment of the present invention will be described. 17A and 17B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 18A to 18C show the method for manufacturing the thin film capacitor according to the present embodiment step by step. 19A to 19D are schematic cross-sectional views showing stepwise a method for manufacturing a thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited, and FIG. FIG. 20 is a schematic top view of FIG. 17 to 20, the same components as those in FIGS. 1 to 16 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the fifth embodiment described above, the four capacitor cells have the common lower electrode 1 and thin film dielectric 2, whereas in the present embodiment, the thin film dielectric 2 is also divided into four parts for insulation. It is different in that it is insulated and separated by the film 7, and other than that, it has the same structure as that of the fifth embodiment.

  The size and shape of the cell divided into four are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 18A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and four thin film dielectrics are formed on the surface of the lower electrode 1. The body 2 is formed, the first upper electrodes 3 are formed on the surfaces of the four thin film dielectrics 2, and the anodizable conductor layers 4 are formed on the surfaces of the first upper electrodes 3, respectively. (Step 1).

  Then, by the manufacturing method similar to the manufacturing method of the thin film capacitor according to the fifth embodiment described above, the thin film capacitor according to this embodiment in which the four cells shown in FIG. 3).

  In addition, as shown in FIG. 19A, in Step 1 of the above manufacturing method, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 is used as an anode. When oxidation is performed, only in the cell in which the short circuit has occurred, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized. As a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIGS. 19C and 20, the second upper electrode 5 is formed (step 3). Then, an insulating film 7 for insulating and separating the thin film dielectric 2, the first upper electrode 3, the conductor layer 4 and the second upper electrode divided into four parts is formed. The parallel connection electrode 8 is formed on the entire surface from above the opening. As a result, as shown in FIG. 19D, the high capacity of the thin film dielectric 2 is maintained in the cell in which the anodic oxide film 6 is not formed. In the cell in which the short circuit occurs, a capacitor using the anodic oxide film 6 as a dielectric is formed, and although the capacity is inferior to a thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit of the capacitor can be repaired. Yes (step 4).

  The thin film capacitor according to the present embodiment has operations and effects similar to those of the thin film capacitor according to the fifth embodiment described above.

  In the present embodiment, an example is shown in which the cell is divided into four cells, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a seventh embodiment of the present invention will be described. FIGS. 21A and 21B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 22A and 22B show the thin film capacitor manufacturing method according to the present embodiment step by step. FIG. 23A to FIG. 23C are schematic cross-sectional views showing stepwise the method of manufacturing the thin film capacitor according to the present embodiment when the thin film dielectric 2 is short-circuited. 21 to 23, the same components as those in FIGS. 1 to 20 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the thin film capacitor according to the present embodiment, as shown in FIG. 21A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1 more than the lower electrode 1. A thin-film dielectric 2 having a small area is formed, and a conductor layer 4 having a smaller area than the thin-film dielectric 2 and capable of anodization is formed on the surface of the thin-film dielectric 2 in two parts. The cells composed of the conductor layer 4 divided into pieces are insulated and separated by an insulating film 7, and the conductor layer 4 of each cell is connected by a parallel connection electrode 8 formed on the conductor layer 4. Thus, in each cell, the lower electrode 1 is used as one electrode, the conductor layer 4 capable of anodization and the parallel connection electrode 8 are used as the other upper electrode, and the thin film dielectric 2 is used as a dielectric. A capacitor is configured.

  Further, in the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited during the manufacturing process, as shown in FIG. 21B, the second corresponding to the portion of the thin film dielectric 2 that is not short-circuited. The cell has the same configuration as that shown in FIG. 21A, and in the first cell corresponding to the short-circuited portion of the thin film dielectric 2, the lower electrode is formed on the surface of the base substrate (not shown). 1 is formed, and a thin film dielectric 2a having a smaller area than the lower electrode 1 is formed on the surface of the lower electrode 1, and an anodization is performed on the surface of the thin film dielectric 2a having a smaller area than the thin film dielectric 2a. The possible conductor layer 4 is divided into two parts, and a part of the surface of the conductor layer 4 divided into two parts is anodized to form an anodized film 6.

  The cells divided into two are insulated and separated by an insulating film 7, and a parallel connection electrode 8 is formed in common on the anodic oxide film 6 of the first cell and the conductor layer 4 of the second cell. In one cell, a capacitor is configured with the lower electrode 1, the thin film dielectric 2a, and the conductor layer 4 as one electrode, the parallel connection electrode 8 as the other electrode, and the anodic oxide film 6 as a dielectric. The capacitor is configured with the lower electrode 1 as one electrode, the anodizable conductor layer 4 and the parallel connection electrode 8 as the other upper electrode, and the thin film dielectric 2 as a dielectric, and the cells are connected in parallel. The electrodes 8 are connected. Thereby, the thin film capacitor according to the present embodiment is configured.

  The size and shape of the cell divided into two are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 22A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and a thin film dielectric 2 is formed on the surface of the lower electrode 1. Then, two anodizable conductor layers 4 are formed on the surface of the thin film dielectric 2. Then, anodic oxidation is performed using the lower electrode 1 as an anode (step 1). Then, as shown in FIG. 22B, an insulating film 7 for insulating and separating the two conductor layers 4 is formed, and the entire surface of the insulating film 7 is opened. A parallel connection electrode 8 is formed, whereby a thin film capacitor according to the present embodiment in which two cells are connected in parallel is obtained (step 2).

  Further, as shown in FIG. 23A, in step 1 of the above manufacturing method, when a defect exists in the thin film dielectric 2 and a short circuit occurs (step 1), the anode is formed using the lower electrode 1 as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized only in the cell where the short circuit occurs, and as a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIG. 23 (c), an insulating film 7 for insulating and separating the conductor layers 4 divided into two is formed and connected in parallel from above the opening of the insulating film 7 to the entire surface. In the cell in which the electrode 8 is formed and the anodic oxide film 6 is not formed, the high capacity of the thin film dielectric 2 is maintained, and in the cell in which the short circuit occurs, the capacitor using the anodic oxide film 6 as a dielectric is used. Although the capacitance is inferior to that of the thin film capacitor formed and using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired (step 3).

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. Further, as shown in FIGS. 21A and 21B, the thin film dielectric 2 and the lower electrode 1 always exist below the projection plane in the direction perpendicular to the front and back surfaces of the conductor layer 4, and the thin film dielectric Since the lower electrode 1 is always present below the projection surface in the direction perpendicular to the front and rear surfaces of the body 2, the defect is present in the thin film dielectric 2. As an anode, an anodized film 6 that is an insulator is formed by anodizing the anodizable conductor layer 4 located above the thin film dielectric 2, and as shown in FIG. A capacitor using oxide film 6 as a dielectric is formed. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  In the present embodiment, since the cell is divided into two, only the cell in which the short circuit has occurred can be repaired. Therefore, the cell without the anodic oxide film has a high capacity of the thin film dielectric film. Thus, the capacity obtained by connecting these two cells in parallel is larger than that of a capacitor composed of cells in which all the cells have an anodic oxide film as a dielectric film.

  In the present embodiment, an example is shown in which the cell is divided into two, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, an eighth embodiment of the present invention will be described. FIG. 24 is a schematic cross-sectional view of the thin film capacitor according to the present embodiment. FIGS. 25A and 25B are schematic cross-sectional views showing the thin film capacitor manufacturing method according to the present embodiment step by step. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of a thin film capacitor when a thin film dielectric material is short-circuited. 24 to 26, the same components as those in FIGS. 1 to 23 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the seventh embodiment described above, the two cells have the common lower electrode 1 and the thin film dielectric 2, whereas in the present embodiment, the thin film dielectric 2 is also divided into two and the insulating film 7. However, it has the same structure as that of the eighth embodiment.

  The size and shape of the cell divided into two are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 25A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and two thin film dielectrics are formed on the surface of the lower electrode 1. The body 2 is formed, and conductor layers 4 that can be anodized are formed on the surfaces of the two thin film dielectrics 2 (step 1).

  Then, the thin film capacitor according to the present embodiment in which the two cells shown in FIG. 25B are connected in parallel is obtained by the same manufacturing method as the thin film capacitor according to the seventh embodiment (step). 2).

  In addition, as shown in FIG. 26A, in Step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin-film dielectric 2a is anodized only in the cell where the short circuit occurs, and as a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIG. 26 (c), an insulating film 7 for insulating and separating the thin film dielectric 2 and the conductor layer 4 divided into two is formed, and the insulating film 7 is opened over the opening. As a result, the parallel connection electrode 8 is formed on the entire surface, and as a result, in the cell in which the anodic oxide film 6 is not formed, the high capacity of the thin film dielectric 2 is maintained. A capacitor having a body is formed, and although the capacitance is inferior to that of a thin film capacitor using the thin film dielectric 2 as a dielectric film, a short circuit failure of the capacitor can be repaired (step 3).

  The thin film capacitor according to the present embodiment has operations and effects similar to those of the thin film capacitor according to the seventh embodiment described above.

  In the present embodiment, an example is shown in which the cell is divided into two, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a ninth embodiment of the present invention will be described. 27A and 27B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 28A to 28C show the thin film capacitor manufacturing method according to the present embodiment step by step. 29A to 29D are schematic cross-sectional views showing stepwise the method of manufacturing the thin film capacitor according to this embodiment when the thin film dielectric is short-circuited, and FIG. FIG. 30 is a schematic top view of FIG. 27 to 30, the same components as those in FIGS. 1 to 26 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the thin film capacitor according to the present embodiment, as shown in FIG. 27A, a lower electrode 1 is formed on the surface of a base substrate (not shown), and the lower electrode 1 is formed on the surface of the lower electrode 1 more than the lower electrode 1. A thin-film dielectric 2 having a small area is formed, and a conductor layer 4 having a smaller area than the thin-film dielectric 2 and capable of anodization is formed on the surface of the thin-film dielectric 2 in four parts. An upper electrode 9 having an area smaller than that of the conductor layer 4 is formed on the surface of the conductor layer 4 divided into pieces, and the cells divided into four pieces are insulated and separated from each other by an insulating film 7. 9 are connected by a parallel connection electrode 8 formed on the upper electrode 9. Thus, in each cell, the lower electrode 1 is used as one electrode, the anodizable conductor layer 4, the upper electrode 9 and the parallel connection electrode 8 are used as the other upper electrode, and the thin film dielectric 2 is used as the dielectric. A thin film capacitor according to the embodiment is configured.

  Further, in the thin film capacitor according to the present embodiment, when the thin film dielectric 2 is short-circuited in the manufacturing process, as shown in FIG. 27B, the second corresponding to the portion of the thin film dielectric 2 that is not short-circuited. The cell has the same configuration as that of FIG. 27A described above, and in the first cell corresponding to the short-circuited portion of the thin film dielectric 2, the lower electrode is formed on the surface of the base substrate (not shown). 1 is formed, and a conductor layer 4 having a smaller area than the lower electrode 1 and capable of anodization is formed on the surface of the lower electrode 1 in four parts, and a part of the surface of the conductor layer 4 is an anode. Oxidized film 6 is oxidized. An upper electrode 9 having an area smaller than that of the anodic oxide film 6 is formed on the surface of the anodic oxide film 6.

  The cells divided into four are insulated and separated by the insulating film 7, and the parallel connection electrode 8 is formed in common on the upper electrode 9 of the first cell and the upper electrode 9 of the second cell. The cell includes a capacitor having the lower electrode 1, the thin film dielectric 2a and the conductor layer 4 as one electrode, the upper electrode 9 and the parallel connection electrode 8 as the other electrode, and the anodic oxide film 6 as a dielectric. The cell includes a capacitor in which the lower electrode 1 is one electrode, the anodizable conductor layer 4, the upper electrode 9 and the parallel connection electrode 8 are the other upper electrode, and the thin film dielectric 2 is a dielectric. Each cell is connected by a parallel connection electrode 8. Thereby, the thin film capacitor according to the present embodiment is configured.

  The size and shape of the cell divided into four are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 28A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and a thin film dielectric 2 is formed on the surface of the lower electrode 1. Then, four anodizable conductor layers 4 are formed on the surface of the thin film dielectric 2 (step 1).

  Then, anodic oxidation is performed using the lower electrode 1 as an anode. Then, as shown in FIG. 28B, the upper electrodes 9 are formed on the surfaces of the four anodic oxidizable conductor layers 4 (step 2). Next, as shown in FIG. 28C, an insulating film 7 for insulating and separating the conductor layer 4 divided into four parts and the upper electrode 9 is formed, and the entire surface is formed from above the opening of the insulating film 7. The thin film capacitor according to the present embodiment in which four cells are connected in parallel is obtained (step 3).

  In addition, as shown in FIG. 29A, in Step 1 of the above manufacturing method, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When oxidation is performed, only in the cell in which the short circuit has occurred, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized. As a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIGS. 29C and 30, the upper electrode 9 is formed (step 3). Then, as shown in FIG. 29D, an insulating film 7 for insulating and separating the conductor layer 4 and the upper electrode 9 which are divided into four parts is formed, and the entire surface of the insulating film 7 is formed from above the opening. In the cell in which the parallel connection electrode 8 is formed and thus the anodic oxide film 6 is not formed, the high capacity of the thin film dielectric 2 is maintained, and in the cell in which the short circuit occurs, the anodic oxide film 6 is used as the dielectric. Although the capacitor is formed and the capacitance is inferior to that of the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired (step 4).

  In the thin film capacitor according to the present embodiment, when there is no defect in the thin film dielectric 2, no current flows through the conductor layer 4 even if anodization is performed with the lower electrode 1 as an anode. The high capacity of the thin film dielectric 2 can be maintained. Further, as shown in FIGS. 27A and 27B, the thin film dielectric 2 and the lower electrode 1 always exist below the projection surface in the direction perpendicular to the front and back surfaces of the conductor layer 4, and the thin film dielectric Since the lower electrode 1 is always present below the projection surface in the direction perpendicular to the front and rear surfaces of the body 2, the defect is present in the thin film dielectric 2. As an anode, an anodized film 6 as an insulator is formed by anodizing the anodizable conductor layer 4 positioned above the thin film dielectric 2a. As shown in FIG. A capacitor using oxide film 6 as a dielectric is formed. Thereby, although the capacity is inferior to the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired.

  In this embodiment, since the cell is divided into four, only the cell in which the short circuit has occurred can be repaired. Therefore, the cell in which the anodized film is not formed has a high capacity of the thin film dielectric 2. Thus, the capacity obtained by connecting these four cells in parallel is larger than that of a capacitor composed of cells in which all cells have an anodic oxide film as a dielectric film.

  In the present embodiment, an example is shown in which the cell is divided into four cells, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  Next, a tenth embodiment of the present invention will be described. 31A and 31B are schematic cross-sectional views of the thin film capacitor according to the present embodiment, and FIGS. 32A to 32C show the thin film capacitor manufacturing method according to the present embodiment step by step. 33 (a) to 33 (d) are schematic cross-sectional views showing stepwise the method of manufacturing the thin film capacitor according to this embodiment when the thin film dielectric is short-circuited, and FIG. FIG. 34 is a schematic top view of FIG. 31 to 34, the same components as those in FIGS. 1 to 30 are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the above-described ninth embodiment, the cell of four capacitors has the common lower electrode 1 and the thin film dielectric 2, whereas in the present embodiment, the thin film dielectric 2 is also divided into four, The difference is that the insulating film 7 is insulated and separated, and the rest of the structure is the same as in the ninth embodiment.

  The size and shape of the cell divided into four are not limited.

  Next, a method for manufacturing the thin film capacitor according to the present embodiment will be described.

  First, as shown in FIG. 32A, a lower electrode 1 is formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface, and four thin film dielectrics are formed on the surface of the lower electrode 1. The body 2 is formed, the upper electrodes 9 are formed on the surfaces of the four thin film dielectrics 2, and the conductor layers 4 that can be anodized are formed on the surfaces of the upper electrodes 9 (step 1).

  Then, the thin film capacitor according to the present embodiment in which the four cells shown in FIG. 32C are connected in parallel is obtained by a manufacturing method similar to the manufacturing method of the thin film capacitor according to the ninth embodiment described above (step). 3).

  In addition, as shown in FIG. 33A, in Step 1 of the manufacturing method described above, when a defect exists in the thin film dielectric 2 and a short circuit occurs (Step 1), the lower electrode 1 serves as an anode. When oxidation is performed, the surface of the conductor layer 4 located above the thin film dielectric 2a is anodized only in the cell in which the short circuit occurs, and as a result, as shown in FIG. An oxide film 6 is formed (step 2). Next, as shown in FIGS. 33C and 34, the upper electrode 9 is formed (step 3). Then, an insulating film 7 for insulating and separating the conductor layer 4 divided into four parts and the upper electrode 9 is formed, and a parallel connection electrode 8 is formed over the entire surface of the opening of the insulating film 7, thereby As shown in FIG. 33 (d), in the cell in which the anodic oxide film 6 is not formed, the high capacity of the thin film dielectric 2 is maintained, and in the cell in which the short circuit occurs, the anodic oxide film 6 is used as a dielectric. Although the capacitor is formed and the capacitance is inferior to that of the thin film capacitor using the thin film dielectric 2 as a dielectric film, the short circuit failure of the capacitor can be repaired (step 4).

  The thin film capacitor according to the present embodiment has operations and effects similar to those of the thin film capacitor according to the ninth embodiment described above.

  In the present embodiment, an example is shown in which the cell is divided into four cells, but the present invention is not limited to this, and the cell may be divided into an arbitrary number of cells.

  In the thin film capacitor according to the present invention, the thin film dielectric and the lower electrode are always present below the projection surface in the direction perpendicular to the front and back surfaces of the conductor, and the projection surface in the direction perpendicular to the front and back surfaces of the thin film dielectric is present. The lower electrode is always present. As a result, when there is no defect in the thin film dielectric, no current flows through the conductor even if the anodization is performed with the lower electrode as the anode, so the anodic oxide film is not formed and the high capacity of the thin film dielectric is maintained. be able to. In addition, according to the method of manufacturing a thin film capacitor according to the present invention, when a defect exists in the thin film dielectric and a short circuit occurs, the lower electrode can be used as an anode, and an anodization located above the thin film dielectric can be performed. Conductor anodizing treatment to create an anodic oxide film that is an insulator, and forming a capacitor using this anodic oxide film as a dielectric, thereby reducing the capacity of a thin film capacitor using a thin film dielectric as a dielectric film. Although it is inferior, the short circuit failure of the capacitor can be repaired.

  Further, cell division is performed on one lower electrode, and anodic oxidation is performed using the lower electrode as an anode, so that an anodic oxide film is formed only on the cells having defects in the thin film dielectric. The cells that are not formed retain the high capacity of the thin film dielectric. By connecting the upper electrodes of these divided cells in parallel, there is no short-circuit defect even in a large area, and the dielectric film of all cells is anode. A thin film capacitor having a higher capacity than that of an oxide film capacitor can be obtained.

  The thin film capacitor according to the present invention is not limited to the detailed structure and shape of the capacitor using the lower electrode and the conductor, the upper electrode or the parallel connection electrode as the terminal electrode, and the connection structure with the external wiring and the external electrode. It can be directly connected to the semiconductor element without using it, and it is used for the chip carrier type capacitor connected to the gap between the semiconductor element to be flip-chip connected to the substrate and the substrate with the substrate connected to the semiconductor element at a short distance. The present invention can be applied to various large-area thin film capacitors having a MIM structure such as a built-in substrate capacitor, and a thin film capacitor capable of high-speed response can be formed with a large area and a high capacity.

  Examples for demonstrating the effects of the present invention will be described below.

  First, as a first example of the present invention, a thin film capacitor according to a ninth embodiment of the present invention was prepared.

  First, as shown in FIG. 28A, the lower electrode 1 was formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface. In this embodiment, a silicon wafer having a thermal oxide film with a thickness of 200 nm formed on the surface is used as a base substrate (not shown), and the lower electrode is formed by DC magnetron sputtering in the order of Ti and Ru from the silicon wafer side. 1 was deposited. The lower electrode 1 was a square with a side of 20 mm. The film thicknesses of Ti and Ru were both 50 nm.

Next, a thin film dielectric 2 was formed on the surface of the lower electrode 1. In this example, SrTiO ₃ (STO) added with 5% Mn as a thin film dielectric 2 was deposited on the surface of the lower electrode 1 at a thickness of 100 nm at 400 ° C. by RF sputtering.

  Next, an anodizable conductor layer 4 was formed on the surface of the thin film dielectric 2 (step 1). In this example, the conductor layer 4 was formed to a thickness of 300 nm at room temperature by DC magnetron sputtering using tantalum nitride as a target and Ta as a target and nitrogen as a process gas. Further, the cells of the conductor layer 4 were formed into a square having a side of 2.9 mm by etching, and the number of cells on the same lower electrode 1 was 25.

  Next, anodization was performed using the lower electrode 1 as an anode. In this example, anodic oxidation was performed using a mixed solution of tartaric acid and ethylene glycol. As a result, the anodic oxide film 6 was formed only in one of the 25 cells.

  Next, as shown in FIG. 28B, the upper electrode 9 was formed on the surface of the conductor layer 4 (step 2). In this example, TiN was formed as the upper electrode 9 by reactive sputtering using Ti as a target with a thickness of 100 nm. At this time, when the capacitance between the lower electrode 1 and each upper electrode 9 was measured with an impedance analyzer, the cell capacitance in which the anodized film 6 was formed was 18 nF, and the capacity of the cell in which the anodized film 6 was not formed was 198 to At 206 nF, the average was 202 nF.

  Next, as shown in FIG. 28C, an insulating film 7 for insulating and separating the conductor layer 4 and the upper electrode 9 is formed, and the parallel connection electrode 8 is formed over the entire surface of the opening of the insulating film 7. Formed (step 3). Specifically, Cu plating using a Cu / Ti sputtered film as a seed layer is performed, and the seed layer is etched away to form the parallel connection electrode 8, whereby each cell is connected in parallel. A thin film capacitor according to the embodiment was obtained.

  When the capacitance between the lower electrode 1 and the parallel connection electrode 8 of the thin film capacitor obtained by the above-described manufacturing method was measured with an impedance analyzer, a high capacitance of 4.87 μF was obtained. In the cell in which the anodic oxide film 6 was formed, the STO thin film dielectric 2 was defective, and the lower electrode 1 and the conductor layer 4 were short-circuited. If there is no defect in the STO thin film dielectric 2 of all cells, a capacitance of 5.05 μF can be obtained by calculation. In this embodiment, however, the decrease in the capacitance is about 4%, which is sufficient. A high capacity was obtained. If the upper electrode 9 of each cell is connected in parallel without performing the anodic oxidation process, the entire thin film capacitor is short-circuited. Further, when the dielectrics of all cells are formed of an anodic oxide film, only a capacity of 0.45 μF can be obtained. Therefore, it was demonstrated that the short-circuited cell can be repaired and a high-capacity thin-film capacitor can be obtained by the method for manufacturing a thin-film capacitor according to the present invention.

  Next, as a second example of the present invention, a thin film capacitor according to a fifth embodiment of the present invention was created.

  First, as shown in FIG. 14A, the lower electrode 1 was formed on the surface of a base substrate (not shown) having an insulating layer formed on the surface. In this embodiment, a silicon wafer having a thermal oxide film with a thickness of 200 nm formed on the surface is used as a base substrate (not shown), and the lower electrode is formed by DC magnetron sputtering in the order of Ti and Ru from the silicon wafer side. 1 was deposited. The lower electrode 1 was a square with a side of 20 mm. The film thicknesses of Ti and Ru were both 50 nm.

Next, a thin film dielectric 2 was formed on the surface of the lower electrode 1. In this example, SrTiO ₃ (STO) added with 5% Mn as a thin film dielectric 2 was deposited on the surface of the lower electrode 1 at a thickness of 100 nm at 400 ° C. by RF sputtering.

  Next, the first upper electrode 3 was formed on the surface of the thin film dielectric 2. In this example, Pt was formed by sputtering film formation with a thickness of 100 nm as the first upper electrode 3.

  Next, the anodizable conductor layer 4 was formed on the surface of the first upper electrode 5 (step 1). In this example, sputtered Nb was used as the conductor layer 4. Further, the cells of the conductor layer 4 were formed into a square having a side of 2.9 mm by etching, and the number of cells on the same lower electrode 1 was 25.

  Next, anodization was performed using the lower electrode 1 as an anode. In this example, anodic oxidation was performed using a mixed solution of tartaric acid and ethylene glycol. As a result, the anodic oxide film 6 was formed only in one of the 25 cells.

  Next, as shown in FIG. 14B, the second upper electrode 5 was formed (step 2). In this example, TiN was formed as the second upper electrode 5 to a thickness of 100 nm by reactive sputtering using Ti as a target. At this time, when the capacitance between the lower electrode 1 and each second upper electrode 5 was measured by an impedance analyzer, the cell capacitance in which the anodic oxide film 6 was formed was 31 nF, and the capacitance of the cell in which the anodic oxide film 6 was not formed. Was 195 to 208 nF, with an average of 202 nF.

  Next, as shown in FIG. 14C, an insulating film 7 for insulating and separating the first upper electrode 3, the conductor layer 4, and the second upper electrode is formed. The parallel connection electrode 8 is formed on the entire surface from above the opening (step 3). Specifically, Cu plating using a Cu / Ti sputtered film as a seed layer is performed, and the seed layer is etched away to form the parallel connection electrode 8, whereby each cell is connected in parallel. A thin film capacitor according to the embodiment was obtained.

  The capacitance between the lower electrode 1 and the parallel connection electrode 8 of the thin film capacitor obtained by the above-described manufacturing method was measured with an impedance analyzer and found to be 4.88 μF, compared with the case where all the cells were formed with the STO thin film dielectric 2. The decrease in capacity was about 3%, and a sufficiently high capacity was obtained. Further, when the dielectrics of all the cells are formed of Nb anodic oxide films, only a capacity of 0.77 μF can be obtained. Therefore, it was demonstrated that the short-circuited cell can be repaired and a high-capacity thin-film capacitor can be obtained by the method for manufacturing a thin-film capacitor according to the present invention.

(A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 1st Embodiment of this invention. (A) And (b) is typical sectional drawing which shows the manufacturing method of the thin film capacitor which concerns on 1st Embodiment of this invention in steps. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 1st Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 2nd Embodiment of this invention. (A) And (b) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 2nd Embodiment of this invention. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 2nd Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 3rd Embodiment of this invention. (A) And (b) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 3rd Embodiment of this invention. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 3rd Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 4th Embodiment of this invention. (A) And (b) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 4th Embodiment of this invention. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 4th Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 5th Embodiment of this invention. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 5th Embodiment of this invention. (A) thru | or (d) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 5th Embodiment of this invention when a thin film dielectric material is short-circuited. FIG. 16 is a schematic top view of FIG. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 6th Embodiment of this invention. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 6th Embodiment of this invention. (A) thru | or (d) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 6th Embodiment of this invention when a thin film dielectric material is short-circuited. FIG. 20 is a schematic top view of FIG. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 7th Embodiment of this invention. (A) And (b) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 7th Embodiment of this invention. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 7th Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 8th Embodiment of this invention. (A) And (b) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 8th Embodiment of this invention. (A) thru | or (c) is typical sectional drawing which shows in steps the manufacturing method of the thin film capacitor which concerns on 8th Embodiment of this invention when a thin film dielectric material is short-circuited. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 9th Embodiment of this invention. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 9th Embodiment of this invention. (A) thru | or (d) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 9th Embodiment of this invention when a thin film dielectric material is short-circuited. FIG. 30 is a schematic top view of FIG. (A) And (b) is typical sectional drawing of the thin film capacitor which concerns on 10th Embodiment of this invention. (A) thru | or (c) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 10th Embodiment of this invention. (A) thru | or (d) are typical sectional drawings which show in steps the manufacturing method of the thin film capacitor which concerns on 10th Embodiment of this invention when a thin film dielectric material is short-circuited. FIG. 34 is a schematic top view of FIG. (A) is a typical top view which shows the circuit board incorporating the capacitor of a prior art, (b) is a typical sectional drawing similarly. It is typical sectional drawing of the circuit board incorporating the capacitor of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1; Lower electrode 2, 2a; Thin film dielectric 3; 1st upper electrode 4; Conductor layer 5 which can be anodized; 2nd upper electrode 6; Anodized film 7; Insulating film 8; Parallel connection electrode 9; Electrode 11; Flexible substrate 12; Adhesive electrode 13; High elastic electrode 14; Oxidation-resistant electrode 15; Lower electrode 16; Insulating layers 17, 20; Lead electrode 17a; Layer 21a, 21b; opening 31; substrate 32; first conductive layer 33; dielectric layer 34; second conductive layer 35; substrate 41; first electrode 50;

Claims (31)

A lower electrode, a thin film dielectric layer formed on the lower electrode, a first upper electrode formed on the thin film dielectric layer, and an anode formed on the first upper electrode A conductor layer made of an oxidizable conductor and a second upper electrode formed on the conductor layer, the lower electrode as one electrode, the first upper electrode, the conductor layer, and A thin film capacitor comprising the second upper electrode as the other electrode and the thin film dielectric layer as a dielectric. A lower electrode, a thin film dielectric layer formed on the lower electrode, a first upper electrode formed on the thin film dielectric layer, and an anode formed on the first upper electrode A conductor layer made of an oxidizable conductor, an anodized film formed on the conductor layer, and a second upper electrode formed on the anodized film, the lower electrode, A capacitor is formed using a thin film dielectric layer, the first upper electrode and the conductor layer as one electrode, the second upper electrode as the other electrode, and the anodic oxide film as a dielectric. A thin film capacitor. A lower electrode, a thin film dielectric layer formed on the lower electrode, a conductor layer made of an anodizable conductor formed on the thin film dielectric layer, and formed on the conductor layer An upper electrode, the lower electrode as one electrode, the conductor layer and the upper electrode as the other electrode, and the thin film dielectric layer as a dielectric to form a capacitor. Thin film capacitor. A lower electrode, a thin film dielectric layer formed on the lower electrode, a conductor layer made of an anodizable conductor formed on the thin film dielectric layer, and formed on the conductor layer An anodic oxide film and an upper electrode formed on the anodic oxide film, the lower electrode, the thin film dielectric layer and the conductor layer as one electrode, and the upper electrode as the other electrode A thin film capacitor comprising a capacitor using the anodic oxide film as a dielectric. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, the cell is formed on a lower electrode, a thin film dielectric layer formed on the lower electrode, and on the thin film dielectric layer. An upper electrode and a conductor layer made of an anodizable conductor formed on the upper electrode, and each conductor layer of the plurality of cells is connected by a connection electrode formed on the conductor layer In each cell, the lower electrode is used as one electrode, the upper electrode, the conductor layer, and the connection electrode are used as the other electrode, and the capacitor is configured using the thin film dielectric layer as a dielectric. A thin film capacitor. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, at least one first cell of the plurality of cells includes a lower electrode, a thin film dielectric layer formed on the lower electrode, An upper electrode formed on the thin film dielectric layer, a conductor layer made of an anodizable conductor formed on each upper electrode, and an anodized film formed on the conductor layer, The other second cell has a lower electrode, a thin film dielectric layer formed on the lower electrode, an upper electrode formed on the thin film dielectric layer, and an upper electrode on the upper electrode. A conductive layer made of an anodizable conductor formed, and a connection electrode is formed in common on the anodized film of the first cell and the conductive layer of the second cell, The first cell includes the lower electrode, the thin film dielectric layer, and the upper electrode. And the conductor layer is one electrode, the connection electrode is the other electrode, the anodized film is a dielectric, and a capacitor is formed. The second cell has the lower electrode as one electrode, and the upper electrode. A thin film capacitor, wherein the conductor layer and the connection electrode are used as the other electrode, the thin film dielectric layer is used as a dielectric to form a capacitor, and each cell is connected by the connection electrode. 7. The thin film capacitor according to claim 5, wherein the plurality of cells have a common lower electrode and a common thin film dielectric, and the upper electrode is separated by the element isolation film. 7. The thin film capacitor according to claim 5, wherein the plurality of cells have a common lower electrode, and the thin film dielectric is separated by the element isolation film. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, the cell is formed on a lower electrode, a thin film dielectric layer formed on the lower electrode, and on the thin film dielectric layer. A first upper electrode, a conductor layer made of an anodizable conductor formed on the first upper electrode, and a second upper electrode formed on the conductor layer, Each second upper electrode of the plurality of cells is connected by a connection electrode formed on the second upper electrode, and in each cell, the lower electrode is one electrode, and the first upper electrode A thin film capacitor comprising: the conductor layer, the second upper electrode, and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, at least one first cell of the plurality of cells includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A first upper electrode formed on the thin film dielectric layer, a conductor layer made of an anodizable conductor formed on the first upper electrode, and formed on the conductor layer An anodic oxide film and a second upper electrode formed on the anodic oxide film, and the other second cell includes a lower electrode and a thin film dielectric layer formed on the lower electrode. A first upper electrode formed on the thin film dielectric layer, a conductor layer made of an anodizable conductor formed on the first upper electrode, and formed on the conductor layer A second upper electrode, wherein the second upper electrode of the first cell and A connection electrode is formed in common on the second upper electrode of the second cell, and the first cell includes the lower electrode, the thin film dielectric layer, the first upper electrode, and the conductor layer. A capacitor is configured with one electrode, the second upper electrode and the connection electrode as the other electrode, the anodized film as a dielectric, and the second cell has the lower electrode as one electrode, A capacitor is configured with the first upper electrode, the conductor layer, the second upper electrode, and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric, and each cell is connected by the connection electrode A thin film capacitor characterized by being made. The thin film according to claim 9 or 10, wherein the plurality of cells have a common lower electrode and a common thin film dielectric, and the first upper electrode is separated by the element isolation film. Capacitor. 11. The thin film capacitor according to claim 9, wherein the plurality of cells have a common lower electrode, and the thin film dielectric is separated by the element isolation film. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, the cell is formed on a lower electrode, a thin film dielectric layer formed on the lower electrode, and on the thin film dielectric layer. A conductive layer made of an anodizable conductor, and each conductive layer of the plurality of cells is connected by a connection electrode formed on the conductive layer, and in each cell, the lower electrode is connected to one of the lower electrodes. A thin film capacitor comprising an electrode, the conductor layer and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, at least one first cell of the plurality of cells includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A conductor layer made of an anodizable conductor formed on the thin film dielectric layer, and an anodized film formed on the conductor layer, and the other second cell has a lower electrode and A thin-film dielectric layer formed on the lower electrode, and a conductive layer made of an anodizable conductor formed on the thin-film dielectric layer, and the anodization of the first cell. A connection electrode is formed in common on the film and on the conductor layer of the second cell, and the first cell has the lower electrode, the thin film dielectric layer, and the conductor layer as one electrode, and the connection The electrode is the other electrode, and the anodic oxide film is the dielectric. A capacitor is configured in which the second cell includes the lower electrode as one electrode, the conductor layer and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. A thin film capacitor, wherein the cells are connected by the connection electrode. 15. The thin film capacitor according to claim 13, wherein the plurality of cells have a common lower electrode and a common thin film dielectric, and the conductor layer is separated by the element isolation film. 15. The thin film capacitor according to claim 13, wherein the plurality of cells have a common lower electrode, and the thin film dielectric is separated by the element isolation film. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, the cell is formed on a lower electrode, a thin film dielectric layer formed on the lower electrode, and on the thin film dielectric layer. A conductor layer made of an anodizable conductor and an upper electrode formed on the conductor layer, and each upper electrode of the plurality of cells is formed by a connection electrode formed on the upper electrode. In each cell, a capacitor is configured with the lower electrode as one electrode, the conductor layer, the upper electrode and the connection electrode as the other electrode, and the thin film dielectric layer as a dielectric. A thin film capacitor. In a thin film capacitor in which a plurality of cells are separated by an element isolation film, at least one first cell of the plurality of cells includes a lower electrode, a thin film dielectric layer formed on the lower electrode, A conductor layer made of an anodizable conductor formed on the thin film dielectric layer, an anodized film formed on the conductor layer, and an upper electrode formed on the anodized film; The other second cell includes a lower electrode, a thin film dielectric layer formed on the lower electrode, and a conductor layer formed on the thin film dielectric layer and made of an anodizable conductor. And an upper electrode formed on the conductor layer, and a connection electrode is formed in common on the upper electrode of the first cell and the upper electrode of the second cell, The first cell includes the lower electrode, the thin film dielectric layer, and the conductor layer. The upper electrode and the connection electrode as the other electrode, and the anodic oxide film as a dielectric to form a capacitor, the second cell has the lower electrode as one electrode, the conductor layer, A thin film capacitor, wherein the upper electrode and the connection electrode are used as the other electrode, the thin film dielectric layer is used as a dielectric, and a capacitor is formed, and each cell is connected by the connection electrode. 19. The thin film capacitor according to claim 17, wherein the plurality of cells have a common lower electrode and a common thin film dielectric, and the conductor layer is separated by the element isolation film. 19. The thin film capacitor according to claim 17, wherein the plurality of cells have a common lower electrode, and the thin film dielectric is separated by the element isolation film. 21. The thin film capacitor according to claim 1, wherein the anodizable conductor is made of a nitride of a group 4 or group 5 metal. Forming a lower electrode; forming a thin film dielectric layer on the lower electrode; forming a first upper electrode on the thin film dielectric layer; and A step of forming a conductor layer made of an anodizable conductor on the upper electrode, a step of anodizing with the lower electrode as an anode, and then a step of forming a second upper electrode; A method of manufacturing a thin film capacitor, comprising: Forming a lower electrode; forming a thin film dielectric layer on the lower electrode; forming a conductor layer made of an anodizable conductor on the thin film dielectric layer; A method of manufacturing a thin film capacitor, comprising: an anodizing process using the lower electrode as an anode; and a process of forming an upper electrode thereafter. Forming a lower electrode; forming a thin film dielectric layer on the lower electrode; dividing a plurality of upper electrodes on the thin film dielectric layer; and A step of forming a conductor layer made of an anodizable conductor on each upper electrode, a step of anodizing with the lower electrode as an anode, and an element isolation film between the upper electrode and the conductor layer A method of manufacturing a thin film capacitor, comprising: a step of providing and separating into a plurality of cells; and a step of forming a connection electrode over the entire surface. Forming a lower electrode; dividing a plurality of thin film dielectric layers on the lower electrode; forming an upper electrode on each thin film dielectric layer; Between the step of forming a conductor layer made of an anodizable conductor on the upper electrode, the step of anodizing with the lower electrode as an anode, and the thin film dielectric layer, the upper electrode and the conductor layer A method of manufacturing a thin film capacitor, comprising: a step of providing an element isolation film on the substrate to separate the substrate into a plurality of cells; and a step of forming a connection electrode over the entire surface. Forming a lower electrode; forming a thin film dielectric layer on the lower electrode; and dividing a plurality of first upper electrodes on the thin film dielectric layer. And a step of forming a conductor layer made of an anodizable conductor on each of the first upper electrodes, a step of anodizing using the lower electrode as an anode, and the anodizing treatment A step of forming a second upper electrode on the conductor layer; a step of providing an element isolation film between the first upper electrode, the conductor layer and the second upper electrode to separate the plurality of cells; And a step of forming a connection electrode over the entire surface. Forming a lower electrode; dividing a plurality of thin film dielectric layers on the lower electrode; and forming a first upper electrode on each thin film dielectric layer. A step of forming a conductive layer made of an anodizable conductor on the first upper electrode, an anodizing treatment using the lower electrode as an anode, and the anodizing treatment Forming a second upper electrode on the conductor layer, and providing a device isolation film between the thin-film dielectric layer, the first upper electrode, the conductor layer, and the second upper electrode to form a plurality of cells And a step of forming a connection electrode on the entire surface. A step of forming a lower electrode; a step of forming a thin film dielectric layer on the lower electrode; and a conductor layer made of a conductor that can be anodized by dividing into a plurality of portions on the thin film dielectric layer. A step of forming a film, a step of performing anodization using the lower electrode as an anode, a step of separating a plurality of cells by providing an element isolation film between each conductor layer, and forming a connection electrode on the entire surface And a process for manufacturing the thin film capacitor. Forming a lower electrode; dividing a plurality of thin film dielectric layers on the lower electrode; and a conductor layer made of an anodizable conductor on each thin film dielectric layer A step of performing an anodic oxidation treatment using the lower electrode as an anode, a step of providing an element isolation film between the thin film dielectric layer and the conductor layer, and separating the plurality of cells, And a step of forming a connection electrode on the thin film capacitor. A step of forming a lower electrode; a step of forming a thin film dielectric layer on the lower electrode; and a conductor layer made of a conductor that can be anodized by dividing into a plurality of portions on the thin film dielectric layer. A step of forming a film, a step of anodizing with the lower electrode as an anode, a step of forming an upper electrode on the anodized conductor layer, and the conductor layer and the upper electrode A method of manufacturing a thin film capacitor, comprising: a step of providing an element isolation film on the substrate to separate the substrate into a plurality of cells; and a step of forming a connection electrode over the entire surface. Forming a lower electrode; dividing a plurality of thin film dielectric layers on the lower electrode; and a conductor layer made of an anodizable conductor on each thin film dielectric layer A film forming step, an anodizing treatment using the lower electrode as an anode, a film forming an upper electrode on the anodized conductor layer, a thin film dielectric layer, a conductor layer And a process of providing an element isolation film between the upper electrode and the upper electrode and separating the plurality of cells, and forming a connection electrode over the entire surface.

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