CN101471176A - Through hole capacitor and its manufacturing method - Google Patents
Through hole capacitor and its manufacturing method Download PDFInfo
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- CN101471176A CN101471176A CNA2007103054501A CN200710305450A CN101471176A CN 101471176 A CN101471176 A CN 101471176A CN A2007103054501 A CNA2007103054501 A CN A2007103054501A CN 200710305450 A CN200710305450 A CN 200710305450A CN 101471176 A CN101471176 A CN 101471176A
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Abstract
The invention discloses a through-hole capacitor and a manufacture method, wherein the through-hole capacitor at least comprises a base plate, a positive layer, a dielectric layer, a first negative layer and a second negative layer. The base plate is provided with a plurality of through holes, the surface of at least a through hole is provided with the positive layer, the surface of the positive layer of at least a through hole has a porous structure, and the dielectric layer is arranged on the porous structure of the positive layer. The first negative layer covers the surface of the dielectric layer, the second negative layer covers the surface of the first negative layer, and the electric conductivity of the second negative layer is bigger than that of the first negative layer. When the negative layers are transmitted as signals, the through-hole capacitor can be used as a matched structure of impedance.
Description
Technical field
The present invention relates to a kind of through hole capacitor (through hole capacitor) and manufacture method thereof, and be particularly related to a kind of through hole capacitor and manufacture method thereof that improves capacitance.
Background technology
The capacitor of tradition on circuit board belongs to surface mounting devices more, and (its configuration mainly is capacitor to be fixed in join on the pad (pad), joins pad and then is fixed on the circuit board for surface mounted device, SMD) element.
Along with the function of IC is complicated day by day, the also and then increase of its outside pin number that is connected with other elements makes the installation work of the circuit board complexity that becomes that heals, and the installation of SMD capacitor has also occupied the surface area of IC substrate.So need to use more multi-layered circuit board or the area that adds large circuit board, and this will make production cost improve.
In addition, being the multi-functional demand in response to electronic product, the IC of difference in functionality is packaged into multi-functional IC module with three-dimensional stacked kenel, is system in package (System in Package, technological trend SiP).Along with the raising of piling up the number of plies, (surface mounted device, SMD) electric capacity is in the layout of to be not sufficient on the circuit board reach and stablizes the voltage stabilizing demand of multilayer chiop under piling up with surface mounting devices.
A kind of through hole capacitor arrangement that capacitor occupies board surface area that reduces so developed at present, as shown in Figure 1.Please refer to Fig. 1, known through hole capacitor 10 comprise the position in the through hole 102 of substrate 100 two- layer conductor layer 104 and 106 and between conductor layer 104 and 106 dielectric layer 108.This capacitor is because of accounting for board surface area, thus be published in a plurality of patents, as No. the 6446317th, No. the 6518670th, TaiWan, China patent announcement number No. 525417, No. the 6717071st, United States Patent (USP), United States Patent (USP) and United States Patent (USP) etc.
Though the through hole capacitor of being carried in the above-mentioned patent can be saved board area, but its capacitance is also little, particularly along with the IC number that piles up on the substrate increases, some IC may need the big electric current of moment, needs voltage and the electric current that the high-capacitance capacitor is stablized whole element this moment.
Summary of the invention
The invention provides a kind of through hole capacitor, belong to the through hole capacitor of high-capacitance.
The present invention provides a kind of manufacture method of through hole capacitor in addition, can make the through hole capacitor of providing high-capacitance.
The present invention proposes a kind of through hole capacitor, comprises a substrate, the anodal layer of one deck, one dielectric layer, one deck first negative electrode layer and one deck second negative electrode layer at least.Aforesaid substrate has several through holes, and anodal layer is the inner surface that is positioned at least one through hole, and the surface of anodal layer is a loose structure at least one through hole.Dielectric layer then is positioned on the loose structure of anodal layer.As for first negative electrode layer is the surface that is covered in dielectric layer, and second negative electrode layer is the surface that is covered in first negative electrode layer, and wherein the conductivity of second negative electrode layer is greater than the conductivity of first negative electrode layer.
In one embodiment of this invention, above-mentioned dielectric layer comprises the substrate surface that extends to beyond the through hole.
In one embodiment of this invention, above-mentioned first negative electrode layer comprises the double-decker of conducting polymer or manganese dioxide or conducting polymer and manganese dioxide.
In one embodiment of this invention, above-mentioned second negative electrode layer comprises the composite bed of carbon containing and metal, and wherein the metal in the composite bed comprises silver, copper, gold or nickel.
In one embodiment of this invention, above-mentioned second negative electrode layer comprises and fills up above-mentioned through hole.
In one embodiment of this invention, the through hole in the aforesaid substrate is arrayed.
The present invention proposes a kind of manufacture method of through hole capacitor in addition, is included in and forms several through holes in the substrate, and the inner surface at least one through hole forms the anodal layer of one deck again.Then, anodal layer is carried out one surface treatment, make the surface of anodal layer become loose structure, on loose structure, form one dielectric layer again.Then, form first negative electrode layer on dielectric layer, form second negative electrode layer again on first negative electrode layer, wherein the conductivity of second negative electrode layer is greater than the conductivity of first negative electrode layer.
In another embodiment of the present invention, above-mentioned surface treatment comprises etch process.
In another embodiment of the present invention, the method for above-mentioned formation dielectric layer comprises anode oxidation method.
In another embodiment of the present invention, the method for above-mentioned formation second negative electrode layer is included in the through hole and with the compound mode of inserting conducting resinl, sputter, plating, chemical vapour deposition (CVD) or above method second negative electrode layer is plated in this first negative electrode layer surface.
In various embodiments of the present invention, above-mentioned through hole electric capacity can all or part ofly be connected in parallel to each other.
In various embodiments of the present invention, the material of anodal layer comprises aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO).
In various embodiments of the present invention, the material of first negative electrode layer comprises that organic semiconductor, inorganic semiconductor or organic and inorganic mix (organic-inorganic hybrid) electric conducting material.Wherein, above-mentioned inorganic semiconductor comprises manganese dioxide (MnO
2), above-mentioned organic semiconductor comprises that electric charge shifts wrong salt or conducting polymer.And above-mentioned conducting polymer comprises polypyrrole (polypyrrole), polythiophene (polythiophene) or polyaniline (polyaniline).
In various embodiments of the present invention, the material of above-mentioned first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
In various embodiments of the present invention, the material of above-mentioned second negative electrode layer comprises the composite material of carbon containing and metal.Then comprise silver, copper, gold or nickel as for the metal in the composite material.
In various embodiments of the present invention, above-mentioned second negative electrode layer comprises the simple metal layer.
In various embodiments of the present invention, when above-mentioned first negative electrode layer and second negative electrode layer were the signal transport layer, through hole electric capacity can be done impedance matching and use.
In various embodiments of the present invention, aforesaid substrate comprises silicon substrate, insulated substrate or metal substrate.
Therefore the present invention increases the capacitance of through hole capacitor greatly because anodal layer in the through hole capacitor and the contact area between the dielectric layer are increased.And through hole capacitor of the present invention is near because of the capacitor from the more traditional surface mounting devices of the IC of need voltage stabilizing (SMD), therefore can reach preferable voltage regulation result.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the generalized section of known a kind of through hole capacitor.
Fig. 2 is the generalized section according to a kind of through hole capacitor of the first embodiment of the present invention.
Fig. 3 is then to be the generalized section of through hole capacitor of a kind of variation of Fig. 2
Fig. 4 is the manufacturing process block diagram according to a kind of through hole capacitor of the second embodiment of the present invention.
Description of reference numerals
10,20: through hole capacitor 100,200: substrate
102,210: through hole 104,106: conductor layer
108,204,300: dielectric layer 202: anodal layer
202a: 206: the first negative electrode layers in surface
208,302: the second negative electrode layers 212: inner surface
214: loose structure 400～410: step
Embodiment
Hereinafter see also accompanying drawing and understand the present invention more fully, wherein accompanying drawing shows various embodiments of the present invention.But, also available multiple multi-form practice of the present invention, and the embodiment that it should be interpreted as being limited to hereinafter and be stated.In fact, provide these embodiment, fully convey the scope of the invention to affiliated technical field technical staff simultaneously thus just in order to make the present invention more detailedly and complete disclosed.In graphic, for the purpose of clear and definite, the size and the relative size of each layer may be done describing of exaggeration.
Fig. 2 is the generalized section according to a kind of through hole capacitor of the first embodiment of the present invention.
Please refer to Fig. 2, the through hole capacitor 20 of first embodiment comprises a substrate 200, the anodal layer 202 of one deck, one dielectric layer 204, one deck first negative electrode layer 206 and one deck second negative electrode layer 208.Aforesaid substrate 200 has through hole 210, and in first embodiment, substrate 200 is a silicon substrate, and substrate 200 can also be insulated substrate or metal substrate in addition.Though only show a through hole 210 and a through hole capacitor 20 in Fig. 2, substrate 200 can also have other through holes, remove the through hole capacitor can be set, also can be used as the part of circuit layout.And, can all or part ofly be connected in parallel to each other between a plurality of through hole electric capacity.Through hole in the aforesaid substrate can be selected with arrayed.And, first embodiment describes with cross sectional illustration, and cross sectional illustration is just done it idealized illustrative, therefore may depart to some extent with true form because of manufacturing technology and/or permission, so the present invention should not be construed as limited to the given shape of being described among first embodiment, but comprise the shape that other can be implemented.For example, the through hole 210 among Fig. 2 is considered to circular hole usually, but through hole 210 of the present invention can also be through holes such as rectangular through-hole, hexagon through hole.Therefore, profile is essentially schematically, and its shape do not mean the accurate shape of element, and not in order to limit the scope of the invention.
Please continue with reference to Fig. 2, anodal layer 202 is positioned at the inner surface 212 of through hole 210, and wherein anodal layer 202 material is aluminium (Al), tantalum (Ta), niobium (Nb) or columbium monoxide (NbO) etc. for example.And the surperficial 202a of anodal layer 202 is a loose structure 214, the enlarged drawing upper right as Fig. 2.204 of dielectric layers are to be positioned on the loose structure 214 of anodal layer 202; For instance, when anodal layer 202 be an aluminium lamination, and loose structure 214 is metallic aluminium structures after etching, and then 204 of dielectric layers are loose structure 214 is formed on loose structure 214 surfaces after anodic oxidation aluminium oxide (Al
2O
3).Aforementioned loose structure 214 also can be described as " spongelike structure ".As for first negative electrode layer 206 are the surfaces that are covered in dielectric layer 204.The material of first negative electrode layer 206 for example organic semiconductor, inorganic semiconductor or organic and inorganic mixes (organic-inorganic hybrid) electric conducting material, wherein inorganic semiconductor such as manganese dioxide (MnO
2), organic semiconductor then for example electric charge shift wrong salt or conducting polymer.And above-mentioned conducting polymer for example polypyrrole (polypyrrole), polythiophene (polythiophene), polyaniline (polyaniline) or other suitable conducting polymer.And the material of first negative electrode layer 206 also can to select be two kinds of conducting polymer composites of single conducting polymer composite or mixing.In addition, first negative electrode layer 206 can be the double-decker of conducting polymer or manganese dioxide or conducting polymer and manganese dioxide also, and is not limited to the described simple layer structure of first embodiment.
Please once again with reference to Fig. 2, the material of above-mentioned first negative electrode layer 206 is because have the self-healing effect, so in the regional ability of insulating voluntarily that has of height electric leakage, in order to reduce the electric leakage of capacity cell.208 of second negative electrode layers are to fill up above-mentioned through hole 210, and to cover first negative electrode layer, 206 surfaces, wherein the conductivity of second negative electrode layer 208 is greater than the conductivity of first negative electrode layer 206.When above-mentioned first negative electrode layer 206 and second negative electrode layer 208 were the signal transport layer, through hole electric capacity can be worked as impedance matching and be used.Wherein, second negative electrode layer 208 comprises the composite bed of carbon containing and metal, and wherein the metal in the composite bed comprises silver, copper, gold or nickel; That is to say that the material of second negative electrode layer 208 can be C/Ag or C/Cu or C/Au.Second negative electrode layer 208 also can be the simple metal layer.Above-mentioned second negative electrode layer 208 comprises and fills up above-mentioned through hole.
Fig. 3 is then to be the generalized section of through hole capacitor of a kind of variation of Fig. 2, wherein use with Fig. 2 in the components identical symbol represent identical member.Please refer to Fig. 3, itself and Fig. 2 maximum difference are that the loose structure 300 of anodal layer 202 is to extend to through hole 210 substrate 200 surfaces in addition.In other words, dielectric layer (not indicating) also will extend to substrate 200 surfaces beyond the through hole 210, so the contact area between dielectric layer (not indicating) and the anodal layer 202 will be bigger.Second negative electrode layer 302 then only is covered in the surface of first negative electrode layer 206.
More than the various forms of through hole capacitors of first embodiment all can reach more than tens of times of traditional through hole capacitor by increasing the capacitance meter area, and increase the capacitance of through hole capacitor greatly.And this through hole capacitor is because (surfacemounted device, capacitor SMD) are near, so voltage regulation result will be better from the more traditional surface mounting devices of the IC of need voltage stabilizing.
Fig. 4 then is the manufacturing process block diagram according to a kind of through hole capacitor of the second embodiment of the present invention.
Please join this Fig. 4, in step 400, form several through holes in a substrate, aforesaid substrate is silicon substrate, insulated substrate or metal substrate for example.
In step 402, at the anodal layer of inner surface formation one deck of at least one through hole.The material of anodal layer is aluminium, tantalum, niobium or columbium monoxide for example.
Then, in step 404, anodal layer is carried out one surface treatment, make the surface of anodal layer become loose structure, above-mentioned surface treatment for example is that etch process or other can make the method for anodal laminar surface roughening.For instance, when the material of anodal layer was aluminium, available hydrochloric acid, sulfuric acid, phosphoric acid or mix aforementioned several acid carried out etching.
In step 406, on loose structure, form one dielectric layer.The method of above-mentioned formation dielectric layer is anode oxidation method for example.For instance, when the material of anodal layer is aluminium, can form aluminium oxide (Al through electrochemical anodic oxidation
2O
3) as dielectric layer.In addition, also can be chosen on the surface of the loose structure after the oxidation and deposit another layer dielectric material again.
Then, in step 408, form one deck first negative electrode layer on dielectric layer, the material of first negative electrode layer is organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material for example.Wherein, above-mentioned inorganic semiconductor for example manganese dioxide, above-mentioned organic semiconductor for example electric charge shift wrong salt or conducting polymer.And above-mentioned conducting polymer for example polypyrrole, polythiophene or polyaniline.In addition, when the material of first negative electrode layer is the conductive polymer period of the day from 11 p.m. to 1 a.m, can be two kinds of conducting polymer composites of single conducting polymer composite or mixing.
In step 410, on first negative electrode layer, form one deck second negative electrode layer, wherein the conductivity of second negative electrode layer is greater than the conductivity of first negative electrode layer.As for the method that forms second negative electrode layer, for example in through hole, second negative electrode layer is plated in the first negative electrode layer surface with the combination of inserting conducting resinl, sputter, plating, chemical vapour deposition (CVD) or above method.The material of above-mentioned second negative electrode layer is the composite material of carbon containing and metal for example.As for the metal in the composite material then for example silver, copper, gold or nickel.In addition, second negative electrode layer also can be the simple metal layer.
In sum, through hole capacitor of the present invention is because use the anodal layer with loose structure, so the contact area between anodal layer and dielectric layer can significantly increase, and then the capacitance of through hole capacitor significantly increased.Therefore, through hole capacitor of the present invention is applicable to that IC piles up the many three-dimension packaging structures of the number of plies, provide the transmission of the IC signal between different layers by through hole, and there is through hole electric capacity that the voltage stabilizing demand of multilayer IC is provided simultaneously, because of designing in the stacked structure of multilayer IC, therefore have than distinct faces assembly device (SMD) electric capacity of conventional in layout on circuit board, preferable voltage stabilizing effect is arranged.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (33)
1. through hole capacitor comprises at least:
Substrate, this substrate has a plurality of through holes;
Anodal layer is positioned at the inner surface of at least one through hole, and surface that should the positive pole layer in wherein at least one through hole is a loose structure;
Dielectric layer is positioned on this loose structure of this positive pole layer;
First negative electrode layer is covered in the surface of this dielectric layer; And
Second negative electrode layer is covered in the surface of this first negative electrode layer, and wherein the conductivity of this second negative electrode layer is greater than the conductivity of this first negative electrode layer.
2. through hole capacitor as claimed in claim 1, material that wherein should the positive pole layer comprises aluminium, tantalum, niobium or columbium monoxide.
3. through hole capacitor as claimed in claim 1, wherein this dielectric layer comprises this substrate surface that extends to beyond this through hole.
4. through hole capacitor as claimed in claim 1, wherein the material of this first negative electrode layer comprises organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material.
5. through hole capacitor as claimed in claim 4, wherein this inorganic semiconductor comprises manganese dioxide.
6. through hole capacitor as claimed in claim 4, wherein this organic semiconductor comprises that electric charge shifts wrong salt or conducting polymer.
7. through hole capacitor as claimed in claim 6, wherein this conducting polymer comprises polypyrrole, polythiophene or polyaniline.
8. through hole capacitor as claimed in claim 6, wherein the material of this first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
9. through hole capacitor as claimed in claim 1, wherein this first negative electrode layer comprises the double-decker of conducting polymer or manganese dioxide or conducting polymer and manganese dioxide.
10. through hole capacitor as claimed in claim 1, wherein this second negative electrode layer comprises the composite bed of carbon containing and metal.
11. through hole capacitor as claimed in claim 10, wherein the metal in this composite bed comprises silver, copper, gold or nickel.
12. through hole capacitor as claimed in claim 1, wherein this second negative electrode layer comprises the simple metal layer.
13. through hole capacitor as claimed in claim 1, wherein this second negative electrode layer comprises and fills up this through hole.
14. through hole capacitor as claimed in claim 1, wherein this substrate comprises silicon substrate, insulated substrate or metal substrate.
15. through hole capacitor as claimed in claim 1, wherein this through hole in this substrate is arrayed.
16. through hole capacitor as claimed in claim 1, wherein this through hole electric capacity in this substrate can all or part ofly be connected in parallel to each other.
17. through hole capacitor as claimed in claim 1, wherein this first negative electrode layer and this second negative electrode layer can be ground plane or signal transport layer, when impedance matching is used.
18. the manufacture method of a through hole capacitor comprises:
In substrate, form a plurality of through holes;
Inner surface at least one through hole forms anodal layer;
This positive pole layer is carried out surface treatment, make the surface of this positive pole layer become loose structure;
On this loose structure, form dielectric layer;
On this dielectric layer, form first negative electrode layer; And
Form second negative electrode layer on this first negative electrode layer, wherein the conductivity of this second negative electrode layer is greater than the conductivity of this first negative electrode layer.
19. the manufacture method of through hole capacitor as claimed in claim 18, wherein this surface treatment comprises etch process.
20. the manufacture method of through hole capacitor as claimed in claim 18, the method that wherein forms this dielectric layer comprises anode oxidation method.
21. the manufacture method of through hole capacitor as claimed in claim 18, material that wherein should the positive pole layer comprises aluminium, tantalum, niobium or columbium monoxide.
22. the manufacture method of through hole capacitor as claimed in claim 18, wherein the material of this first negative electrode layer comprises organic semiconductor, inorganic semiconductor or organic and inorganic hybrid conductive material.
23. the manufacture method of through hole capacitor as claimed in claim 22, wherein this inorganic semiconductor comprises manganese dioxide.
24. the manufacture method of through hole capacitor as claimed in claim 22, wherein this organic semiconductor comprises that electric charge shifts wrong salt or conducting polymer.
25. the manufacture method of through hole capacitor as claimed in claim 24, wherein this conducting polymer comprises polypyrrole, polythiophene or polyaniline.
26. the manufacture method of through hole capacitor as claimed in claim 24, wherein the material of this first negative electrode layer comprises two kinds of conducting polymer composites of single conducting polymer composite or mixing.
27. the manufacture method of through hole capacitor as claimed in claim 18, wherein the material of this second negative electrode layer comprises the composite material of carbon containing and metal.
28. the manufacture method of through hole capacitor as claimed in claim 27, wherein the metal in this composite material comprises silver, copper, gold or nickel.
29. the manufacture method of through hole capacitor as claimed in claim 18, wherein this second negative electrode layer comprises the simple metal layer.
30. the manufacture method of through hole capacitor as claimed in claim 18, the method that wherein forms this second negative electrode layer is included at least one through hole and with the combination of inserting conducting resinl, sputter, plating, chemical vapour deposition (CVD) or above method second negative electrode layer is plated in this first negative electrode layer surface.
31. the manufacture method of through hole capacitor as claimed in claim 18, wherein this substrate comprises silicon substrate, insulated substrate or metal substrate.
32. through hole capacitor as claimed in claim 18, wherein this through hole electric capacity in this substrate can all or part ofly be connected in parallel to each other.
33. through hole capacitor as claimed in claim 18, wherein when this first negative electrode layer and this second negative electrode layer are the signal transport layer, this through hole capacitor is used when impedance matching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103054501A CN101471176A (en) | 2007-12-28 | 2007-12-28 | Through hole capacitor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007103054501A CN101471176A (en) | 2007-12-28 | 2007-12-28 | Through hole capacitor and its manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013100624212A Division CN103177873A (en) | 2007-12-28 | 2007-12-28 | Through-hole capacitor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101471176A true CN101471176A (en) | 2009-07-01 |
Family
ID=40828544
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007103054501A Pending CN101471176A (en) | 2007-12-28 | 2007-12-28 | Through hole capacitor and its manufacturing method |
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| Country | Link |
|---|---|
| CN (1) | CN101471176A (en) |
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2007
- 2007-12-28 CN CNA2007103054501A patent/CN101471176A/en active Pending
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Application publication date: 20090701 |