CN102693839A - Absorption capacitor structure - Google Patents
Absorption capacitor structure Download PDFInfo
- Publication number
- CN102693839A CN102693839A CN2012101258416A CN201210125841A CN102693839A CN 102693839 A CN102693839 A CN 102693839A CN 2012101258416 A CN2012101258416 A CN 2012101258416A CN 201210125841 A CN201210125841 A CN 201210125841A CN 102693839 A CN102693839 A CN 102693839A
- Authority
- CN
- China
- Prior art keywords
- terminal
- igbt
- electric capacity
- capacitor
- capacitor core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 26
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Abstract
The invention relates to an absorption capacitor structure which is characterized by being a capacitor with two integrated packaging structures and being provided with terminals which can be respectively and directly connected with IGBT pins in a one-to-one correspondence mode. When the IGBT module is used, the terminals are respectively and directly connected with the corresponding pins of the IGBT to form a structure which is directly connected with the IGBT in parallel. The invention has the advantages that the capacitor is designed integrally, the terminals which are in one-to-one correspondence with the IGBT pins are led out through internal packaging, and are directly connected in parallel on the IGBT module, the assembly is convenient, and meanwhile, the capacitor is as high as the IGBT module, and can be conveniently fixed on a radiator of the IGBT module, thereby being beneficial to the heat dissipation of devices, reducing the temperature rise of the absorption capacitor and effectively improving the reliability of the absorption capacitor.
Description
Technical field
The present invention relates to absorption capacitor, particularly a kind of integrated absorption capacitance structure that is applied on the bridge type inverse loop.
Background technology
Commercial electromagnetic oven adopts half-bridge or full-bridge inverting topological structure usually, in the high-frequency inversion process, in order to realize the soft switch of switching device, needs to increase absorption electric capacity usually and makees buffer circuit, turn-offs switching loss constantly to reduce.Owing to be under the high cut-off current condition, it is serious to absorb the electric capacity self-heating.Existing absorption electric capacity is generally separate structure, and the CE that absorbs electric capacity and IGBT is extremely distant, and pin is long, and stray inductance is bigger, and assimilation effect is poor; Owing to receive the influence of IGBT package module, absorb electric capacity and install inconvenient in addition.
Summary of the invention
The objective of the invention is to provides a kind of absorption capacitance structure to above-mentioned existing problem; Can reduce the stray inductance of pin, improve the assimilation effect that absorbs electric capacity, improve the assembling capacity of system simultaneously; Reduce the temperature that absorbs electric capacity, increase the reliability that absorbs electric capacity.
The technical scheme that realizes the object of the invention is: a kind of absorption capacitance structure is characterized in that it is the electric capacity of two integrated encapsulating structures, and is provided with and can distinguishes direct-connected terminal with the IGBT pin is corresponding one by one.
Above-mentioned absorption electric capacity comprises first capacitor core, second capacitor core, the first terminal, second terminal and the 3rd terminal, and said the first terminal links to each other with the lower surface of first capacitor core through solder joint; Second terminal links to each other with the lower surface of second capacitor core through solder joint; The 3rd terminal links to each other with upper surface, the second capacitor core upper surface of first capacitor core through solder joint respectively.
In the electric capacity shell, draw from the electric capacity shell by said terminal through the filler embedding for above-mentioned absorption electric capacity.
During use, the first terminal of the present invention, second terminal, the 3rd terminal directly are connected with three pins of IGBT respectively, form the present invention and the direct parallelly connected structure of IGBT.
The invention has the beneficial effects as follows, capacitance module is done integrated design, encapsulate through inside; Draw and IGBT pin three butts one to one; Be directly parallel on the module of IGBT, have easy to assembly, simultaneously electric capacity and height such as IGBT module grade; Can be fixed on easily on the radiator of IGBT module, help the heat radiation of device.
Description of drawings
Fig. 1 is the sketch map that integral body of the present invention is connected with IGBT;
The concrete structure sketch map that Fig. 2 launches for the present invention;
Another visual angle concrete structure sketch map that Fig. 3 launches for the present invention;
Fig. 4 is embedding of the present invention structural representation after accomplishing;
The electrical schematic diagram that Fig. 5 is connected with IGBT for the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described further.
Like Fig. 2, Fig. 3, shown in Figure 4, first capacitor core 14, second capacitor core 15, the first terminal 11, second terminal 12, the 3rd terminal 13, electric capacity shell 16 and filler 17 have been the present invention includes; The first terminal 11 links to each other with the lower surface of first capacitor core 14 through solder joint 143; Second terminal 12 links to each other with the lower surface of second capacitor core 15 through solder joint 153; The 3rd terminal 13 links to each other with the upper surface of first capacitor core 14 through solder joint 142, links to each other with second capacitor core, 15 upper surfaces through solder joint 152; Then through filler 17 embeddings in electric capacity shell 16, the first terminal 11, second terminal 12, the 3rd terminal 13 are drawn from electric capacity shell 16, constitute the capacitance structure of two integrated encapsulating structures, in the present embodiment, filler 17 adopts epoxy resin.
When the present invention used, like Fig. 1, shown in Figure 5, its first terminal 11, second terminal 12, the 3rd terminal 13 directly linked to each other with first pin two 1, second pin two the 2, the 3 23 of corresponding IGBT module 2 respectively.
The present invention passes through in the inverter circuit; The absorption electric capacity at IGBT two ends carries out integrated encapsulation, makes the terminal that absorbs electric capacity corresponding one by one, convenient for assembly with the pin of IGBT; The lead-in wire of the electric capacity of this kind structure absorption simultaneously is relatively short, can reduce stray inductance effectively; In addition, absorbing electric capacity can also directly be fixed on the fin, and itself and the integrated design of height such as IGBT grade can utilize the IGBT radiator to dispel the heat to absorbing electric capacity very easily, reduce the temperature rise that absorbs electric capacity, improve the reliability of absorption electric capacity effectively.
Claims (3)
1. one kind absorbs capacitance structure, it is characterized in that it is the electric capacity of two integrated encapsulating structures, and is provided with and can distinguishes direct-connected terminal with the IGBT pin is corresponding one by one.
2. absorption capacitance structure according to claim 1; It is characterized in that; Said electric capacity comprises first capacitor core (14), second capacitor core (15), the first terminal (11), second terminal (12) and the 3rd terminal (13), and said the first terminal (11) links to each other with the lower surface of first capacitor core (14) through solder joint (143); Second terminal (12) links to each other with the lower surface of second capacitor core (15) through solder joint (153); The 3rd terminal (13) links to each other with upper surface, second capacitor core (15) upper surface of first capacitor core (14) through solder joint (142,152) respectively.
3. absorption capacitance structure according to claim 1 and 2 is characterized in that, in electric capacity shell (16), draw from electric capacity shell (16) by said terminal through filler (17) embedding for said electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101258416A CN102693839A (en) | 2012-04-26 | 2012-04-26 | Absorption capacitor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101258416A CN102693839A (en) | 2012-04-26 | 2012-04-26 | Absorption capacitor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102693839A true CN102693839A (en) | 2012-09-26 |
Family
ID=46859213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101258416A Pending CN102693839A (en) | 2012-04-26 | 2012-04-26 | Absorption capacitor structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102693839A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890830A (en) * | 2018-09-07 | 2020-03-17 | 中车株洲电力机车研究所有限公司 | Direct current conversion loop module for high-frequency converter power module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201332023Y (en) * | 2008-12-29 | 2009-10-21 | 佛山市顺德区创格电子实业有限公司 | Combined capacitor for filtering and resonant vibration |
| CN102324300A (en) * | 2011-07-27 | 2012-01-18 | 佛山市顺德区创格电子实业有限公司 | High-voltage parallel compensation capacitor made of self-healing metallized film |
| CN202352523U (en) * | 2011-11-18 | 2012-07-25 | 佛山市顺德区创格电子实业有限公司 | External hanging type high-voltage resonance module capacitor for induction heating equipment |
| CN202616046U (en) * | 2012-04-26 | 2012-12-19 | 美的集团有限公司 | Absorption capacitor structure |
-
2012
- 2012-04-26 CN CN2012101258416A patent/CN102693839A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201332023Y (en) * | 2008-12-29 | 2009-10-21 | 佛山市顺德区创格电子实业有限公司 | Combined capacitor for filtering and resonant vibration |
| CN102324300A (en) * | 2011-07-27 | 2012-01-18 | 佛山市顺德区创格电子实业有限公司 | High-voltage parallel compensation capacitor made of self-healing metallized film |
| CN202352523U (en) * | 2011-11-18 | 2012-07-25 | 佛山市顺德区创格电子实业有限公司 | External hanging type high-voltage resonance module capacitor for induction heating equipment |
| CN202616046U (en) * | 2012-04-26 | 2012-12-19 | 美的集团有限公司 | Absorption capacitor structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890830A (en) * | 2018-09-07 | 2020-03-17 | 中车株洲电力机车研究所有限公司 | Direct current conversion loop module for high-frequency converter power module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202616046U (en) | Absorption capacitor structure | |
| CN101582413B (en) | Power module with lower stray inductance | |
| CN108281405B (en) | A kind of power device packaging structure and method | |
| CN102693839A (en) | Absorption capacitor structure | |
| CN204706557U (en) | A kind of Intelligent Power Module | |
| CN204793295U (en) | Slim power module | |
| CN110265385B (en) | Packaging structure of power device and manufacturing method thereof | |
| CN103295920B (en) | Nonisulated type power model and packaging technology thereof | |
| CN202872681U (en) | Inverter circuit and structure thereof | |
| CN203691210U (en) | Integrated packaging power supply | |
| CN201332023Y (en) | Combined capacitor for filtering and resonant vibration | |
| CN103779341B (en) | A kind of high-power half bridge module | |
| CN203434153U (en) | Capacitor assembly/chip-integrated radio frequency chip encapsulation structure | |
| CN113725199B (en) | Low-inductance crimping type semiconductor module | |
| CN204516748U (en) | A kind of QFN encapsulating structure of power device | |
| CN102711299B (en) | Commercial induction cooker movement structure | |
| CN202259256U (en) | Rectifier bridge module of electromagnetic oven | |
| CN202840931U (en) | Three-in-one capacitor structure | |
| CN204144005U (en) | Inductor | |
| CN206161787U (en) | Power semiconductor chip testing unit | |
| CN104779224A (en) | QFN (Quad Fiat Nolead) packaging structure of power device | |
| CN204733087U (en) | A kind of high heat conduction and heat radiation rectifier bridge structure | |
| CN103227277A (en) | Welding-wire-free LED packaging method and LED packaging structure | |
| CN203205430U (en) | Optocoupler packaging structure | |
| CN220400572U (en) | Chip packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 528311 Guangdong, Foshan, Beijiao, the United States, the United States and the United States on the avenue of the United States, the headquarters of the United States building B floor, District, 26-28 Applicant after: MIDEA GROUP Co.,Ltd. Address before: 528311 Beijiao, Foshan, Shunde District, the town of Guangdong, the United States Avenue, No. 6 Applicant before: Midea Group |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: MEIDI GROUP CO. LTD. TO: MIDEA GROUP CO., LTD. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120926 |