CN102686004B - Harmonic-wave-controllable frequency system for plasma generator - Google Patents
Harmonic-wave-controllable frequency system for plasma generator Download PDFInfo
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- CN102686004B CN102686004B CN201110064745.0A CN201110064745A CN102686004B CN 102686004 B CN102686004 B CN 102686004B CN 201110064745 A CN201110064745 A CN 201110064745A CN 102686004 B CN102686004 B CN 102686004B
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Abstract
The invention relates to a harmonic-wave-controllable radio frequency system for a plasma generator. The radio frequency system comprises a first radio frequency source for supplying radio frequency energy generating plasmas and a matching box connected between the first radio frequency source and a driving electrode, and by arranging a matching circuit, load impedance of the plasmas in a reaction cavity is matched with output impedance of the first radio frequency source. The harmonic-wave-controllable radio frequency system is characterized in that a harmonic wave control device is further arranged in the matching box and generates tuning impedance with impedance adjustable to adjust the harmonic wave impedance of the first radio frequency source, accordingly, the harmonic wave current of the first radio frequency source is restrained, and plasmas on the surface of a substrate can be evenly distributed; or the harmonic wave control device enables the output tuning impedance to be adjustable between high impedance and low impedance, so that magnitude of the harmonic wave current can be controlled. Density of the plasmas at the center of a substrate is different from that of the plasmas on the surface of the periphery, so that different etching effects can be correspondingly caused.
Description
Technical field
The present invention relates to a kind of radio system of plasma generator, particularly a kind of radio system of the controlled harmonic wave for plasma generator.
Background technology
At present, in the manufacture process of semiconductor device, generally at the vacuum processing chamber of plasma generator, generate the plasma of the reacting gas introduced wherein, the substrate placed is carried out to the process such as etching in treatment chamber.
Existing as in Dual Frequency Capacitive plasma generator, be arranged with flat top electrode and bottom electrode in vacuum reaction chamber in parallel.Such as, apply be separated by the first radio frequency source of certain frequency and the second radio frequency source on the bottom electrode, the first radio frequency source (as 60MHz) that its medium frequency is higher, dissociates or plasma density in order to control reacting gas intermediate ion simultaneously; The second radio frequency source (as 2MHz) that frequency is lower introduces bias voltage to control the ion energy and Energy distribution that incide substrate.
But, because plasma and radio frequency source interact the nonlinear effect caused, have the secondary of the radio frequency source of high frequency, three times or other harmonic wave generation, affect plasma distribution in reaction chamber: make placement substrate on the bottom electrode, plasma density above its center is higher, and the plasma density of corresponding substrate edge position is lower; The frequency of radio frequency source is higher, and this plasma phenomenon pockety is more obvious, thus causes the uneven of etching substrate.
Summary of the invention
The object of this invention is to provide a kind of radio system of the controlled harmonic wave for plasma generator, the harmonic controling device of exportable tuned impedance is set in the matching box between radio frequency source and vacuum reaction chamber, the harmonic current of the radio frequency source of high frequency is suppressed or regulates, to control the distribution of plasma at substrate surface.
In order to achieve the above object, technical scheme of the present invention is to provide a kind of radio system of the controlled harmonic wave for plasma generator, radio-frequency (RF) energy is applied to drive electrode, in the vacuum reaction chamber of plasma generator, the plasma of forming reactions gas processes substrate, wherein, described radio system comprises:
First radio frequency source, it provides the radio-frequency (RF) energy generating described plasma; And
Matching box, it is connected between described first radio frequency source and described drive electrode, is wherein provided with match circuit, and the output impedance of the load impedance of plasma in described reaction chamber and described first radio frequency source is matched;
Be characterized in, be also provided with harmonic controling device in described matching box, be connected with described first radio frequency source, described harmonic controling device produces the adjustable tuned impedance of a resistance value, adjusts the harmonic impedance of described first radio frequency source.
The harmonic current of described first radio frequency source is directly proportional to the power of described first radio frequency source; In power one timing of described first radio frequency source, the resistance value of the tuned impedance that its harmonic current and described harmonic controling device export is inversely proportional to.
Described substrate is placed on described reaction chamber inner bottom part;
The described plasma of this substrate surface, its density is maximum and successively decrease to substrate edge position in the position of corresponding substrate center;
This density contrast at the corresponding substrate center of described plasma and edge, is directly proportional to the harmonic current of described first radio frequency source, is namely inversely proportional to the resistance value of described tuned impedance.
Described harmonic controling device is the inductance, low pass filter or the band stop filter that are arranged in series between described first radio frequency source and described drive electrode;
Or described harmonic controling device is the electric capacity of earth between described first radio frequency source and described drive electrode, high pass filter or band pass filter.
Described harmonic controling device be described in the inductance that is arranged in series, its inductance value is 0.1 μ H ~ 100 μ H.
Described harmonic controling device is described low pass filter, and it is included in two inductance be arranged in series between described first radio frequency source and described drive electrode further, and between described two inductance the electric capacity of earth; Described two inductance are 66nH; Described electric capacity is 53pF.
Described radio system also comprises the second radio frequency source controlling ion energy and Energy distribution in reaction chamber; The frequency poor frequency being less than described first radio frequency source at certain intervals of described second radio frequency source.
The optional frequency of described first radio frequency source comprises 27MHz, 40MHz, 60MHz, 100MHz or 120MHz; The optional frequency of described second radio frequency source comprises 13MHz, 2MHz or 400KHz.
The present invention is particularly useful for described first radio frequency source that frequency is greater than 40 MHz.
Described drive electrode is included in the top electrode and bottom electrode that be arranged in parallel in described reaction chamber;
Described first radio frequency source, is applied to one of described top electrode or bottom electrode by described matching box; Described match circuit and harmonic controling device is configured with for described first radio frequency source in described matching box;
Described second radio frequency source, by the matching box of same or other setting, is applied on described top electrode or bottom electrode, and is applied in identical or different described radio frequency electrode with described first radio frequency source; Described match circuit is configured with for described second radio frequency source in described matching box.
Adjust the described harmonic controling device of the harmonic impedance of the first radio frequency source, between its output being arranged at the match circuit of described first radio frequency source and described radio frequency electrode;
Or, between the output that described harmonic controling device is arranged at the match circuit of described second radio frequency source and described radio frequency electrode, and be connected with described first radio frequency source;
Or, between the public output that described harmonic controling device is arranged at the match circuit of first, second radio frequency source described and described radio frequency electrode;
Or the output of the match circuit of described first radio frequency source, and the output of the match circuit of described second radio frequency source, be connected to a harmonic controling device.
Compared with prior art, the radio system of the controlled harmonic wave for plasma generator of the present invention, its advantage is: the present invention is by described harmonic controling device, the tuned impedance that can export a high impedance suppresses the secondary of the first radio frequency source, the harmonic current of three times, and the plasma physical efficiency of substrate surface is uniformly distributed; Or the tuned impedance exported by making it is adjustable between high impedance to Low ESR, control the size of harmonic current, thus the heart and edge surface can obtain different plasma densitys in the substrate, and the etch effect that corresponding generation is different.
Accompanying drawing explanation
Fig. 1 is the general structure schematic diagram of the radio system of the controlled harmonic wave for plasma generator according to a specific embodiment of the present invention;
Fig. 2 is electrical block diagram when being low pass filter according to harmonic controling device described in the radio system of a specific embodiment of the present invention;
Fig. 3 be according to the radio system of a specific embodiment of the present invention under different impedances to the schematic diagram of the etch-rate of substrate diverse location.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
The radio system of the controlled harmonic wave for plasma generator of the present invention, arranges harmonic controling device in the matching box between radio frequency source and radio frequency electrode, it provides the harmonic current of a tuned impedance to the radio frequency source of high frequency suppress or regulate.Below in conjunction with specific embodiment, present invention is described.
Fig. 1 is the general structure schematic diagram of the radio system of the controlled harmonic wave for plasma generator according to a specific embodiment of the present invention, as shown in Figure 1, the reaction chamber 30 of vacuum is provided with in plasma generator, electrostatic chuck 33(ESC bottom it) upper placement substrate 40, be provided with bottom electrode 31 in this electrostatic chuck 33, reaction chamber 30 inner top is provided with the top electrode 32 parallel with bottom electrode 31.Under radio system effect, the reacting gas 60 introducing reaction chamber 30 can dissociate and form plasma 50, thus carries out the process such as etching to described substrate 40 further.
Described radio system, comprises the matching box 20(matching box be electrically connected with cable etc. and described bottom electrode 31), and the first radio frequency source 11, second radio frequency source 12 of described bottom electrode 31 is applied to by described matching box 20.
Wherein, the frequency of described first radio frequency source 11 is higher, and by forming rf electric field between upper/lower electrode, generation and the density of plasma 50 control.Described second radio frequency source 12, by controlling plasma 50 sheaths automatic bias, controls the ion energy and Energy distribution inciding substrate 40.The frequency of described first radio frequency source 11 can be 27MHz, 40MHz, 60MHz, 100MHz or 120MHz etc.; Match with it, the frequency of described second radio frequency source 12 can be 13MHz, 2MHz or 400KHz etc.
The match circuit (not shown) of described matching box 20 by arranging, the load impedance of plasma 50 and the output impedance of first, second radio frequency source described in described reaction chamber 30 are matched, reduce the reflectivity of first, second radio frequency source described, thus make first, second radio frequency source be applied to described bottom electrode 31 with maximum power output separately.
In order to realize harmonic controling, radio system described in the present embodiment, at the output of described matching box 20, after the common port of the match circuit of first, second radio frequency source namely, is provided with a harmonic controling device 21 further.Described harmonic controling device 21 provides the adjustable tuned impedance of a resistance value, adjusts the harmonic impedance of the first radio frequency source 11 of its medium-high frequency, thus controls the secondary of this first radio frequency source 11, the harmonic current of three times.
It should be noted that, the radio frequency that the present invention is particularly useful for the first radio frequency source 11 is the application scenario being greater than 40 MHz, in the case, invention best results of the present invention, the secondary of the first radio frequency source 11, the harmonic current of three times can be suppressed by which better the described tuned impedance of output one high impedance, the plasma 50 on substrate 40 surface can be uniformly distributed; Or, the tuned impedance exported more effectively by making it is adjustable between high impedance to Low ESR, control the size of this harmonic current, now can obtain different plasma densitys at substrate 40 center and edge surface, thus the etch effect that corresponding generation is different.
Alternatively, described harmonic controling device 21 is the inductance, low pass filter or the band stop filter that are arranged in series between described first radio frequency source 11 and described drive electrode; Or described harmonic controling device 21 is the electric capacity of earth between described first radio frequency source 11 and described bottom electrode 31, high pass filter or band pass filter.
Alternatively, can configure the series inductance of 0.1 μ H ~ 100 μ H as described harmonic controling device 21, it is applicable to the harmonic controling of the first radio frequency source 11 regulated within the scope of certain frequency; Preferably, described inductance value can be 2 μ H ~ 3 μ H.
Alternatively, as shown in Figure 2, can configure low pass filter as described harmonic controling device 21, the harmonic wave that can produce for a certain specific first radio frequency source 11 frequency carries out fine adjustment.Particularly, described low pass filter is included in two inductance be arranged in series between described first radio frequency source 11 and described bottom electrode 31, and between described two inductance the electric capacity of earth.Preferably, when described first radio frequency source 11 is 60MHz, described two inductance are 66nH, and described electric capacity is 53pF.
Composition graphs 1, Fig. 3 shows with the frequency 60MHz of the first radio frequency source 11, in the specific embodiment of the frequency 2MHz of the second radio frequency source 12, described harmonic controling device 21 is to the modulating action of the second harmonic current of the first radio frequency source 11: in Fig. 3, abscissa represents the diameter of substrate 40, and ordinate represents the speed to oxide etching on substrate 40.Visible, when described harmonic controling device 21 does not export tuned impedance or exports a low-impedance tuned impedance, described second harmonic current is larger, namely plasma 50 density of corresponding substrate 40 center is higher, marginal position is lower, as shown in the curve 1 of big rise and fall, the speed at etch substrate 40 center of more than 5400A/min, will be about the speed of 4200A/min far away faster than the most edge of etch substrate 40.
By comparison, if described harmonic controling device 21 exports the tuned impedance of a high impedance, second harmonic current then can be made to diminish, plasma 50 density contrast of corresponding substrate 40 center and substrate 40 marginal position is correspondingly made to diminish, namely the speed at etch substrate 40 center is decreased to about 4700A/min, speed difference between itself and about the speed 4200A/min at etch substrate 40 edge obviously diminishes, and the curve 2 therefore obtained is comparatively smooth.
Thus, harmonic controling device 21 of the present invention, can be suppressed the secondary of the first radio frequency source 11, the harmonic current of three times, the plasma 50 on substrate 40 surface can be uniformly distributed by the tuned impedance exporting a high impedance; Or the tuned impedance exported by making it is adjustable between high impedance to Low ESR, control the size of harmonic current, and correspondence obtains different plasma densitys at substrate 40 center and edge, to produce different etch effect.
Enforcement structure of the present invention is not limited to foregoing description, and such as, described first radio frequency source can also be applied on top electrode by matching box; Described second radio frequency source can be applied on the top electrode identical or different with described first radio frequency source or bottom electrode.The above-mentioned structure (Fig. 1) given after the match circuit common port that harmonic controling device is arranged on first, second radio frequency source; This harmonic controling device can also only be arranged after the match circuit of the first radio frequency source, or only arranges after the match circuit of the second radio frequency source; Or, a harmonic controling device is set after the match circuit of first, second radio frequency source respectively, but described harmonic controling device only adjusts the harmonic current of the first radio frequency source of high frequency.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. the radio system for the controlled harmonic wave of plasma generator, radio-frequency (RF) energy is applied to drive electrode, in the vacuum reaction chamber (30) of plasma generator, the plasma (50) of forming reactions gas (60) processes substrate (40), wherein, described radio system comprises:
First radio frequency source (11), it provides the radio-frequency (RF) energy generating described plasma (50); The frequency of described first radio frequency source (11) is greater than 40MHZ;
Matching box (20), it is connected between described first radio frequency source (11) and described drive electrode, wherein be provided with match circuit, the output impedance of the load impedance of described reaction chamber (30) interior plasma (50) and described first radio frequency source (11) is matched
It is characterized in that:
Harmonic controling device (21) is also provided with in described matching box (20), it is series between described match circuit and described drive electrode, described harmonic controling device (21) produces the harmonic impedance of the adjustable tuned impedance of a resistance value to described first radio frequency source (11) and adjusts, and then the secondary to produce in reaction chamber the first radio frequency source (11), triple harmonic current suppress or regulate, to control the distribution of plasma (50) on substrate (40) surface.
2. as claimed in claim 1 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, the harmonic current of described first radio frequency source (11) is directly proportional to the power of described first radio frequency source (11); In power one timing of described first radio frequency source (11), the resistance value of the tuned impedance that its harmonic current and described harmonic controling device (21) export is inversely proportional to.
3. as claimed in claim 2 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, described substrate (40) is placed on described reaction chamber (30) inner bottom part;
The described plasma (50) on this substrate (40) surface, its density is maximum and successively decrease to substrate (40) marginal position in the position at corresponding substrate (40) center;
This density contrast at described plasma (50) corresponding substrate (40) center and edge, is directly proportional to the harmonic current of described first radio frequency source (11), is namely inversely proportional to the resistance value of described tuned impedance.
4. as claimed in claim 3 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, described harmonic controling device (21) is the inductance, low pass filter or the band stop filter that are arranged in series between described first radio frequency source (11) and described drive electrode;
Or described harmonic controling device (21) is the electric capacity of earth between described first radio frequency source (11) and described drive electrode, high pass filter or band pass filter.
5., as claimed in claim 4 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, described harmonic controling device (21) be described in the inductance that is arranged in series, its inductance value is 0.1 μ H ~ 100 μ H.
6. as claimed in claim 4 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, described harmonic controling device (21) is described low pass filter, it is included in two inductance be arranged in series between described first radio frequency source (11) and described drive electrode further, and between described two inductance the electric capacity of earth; Described two inductance are 66nH; Described electric capacity is 53pF.
7. as claimed in claim 1 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, also comprise the second radio frequency source (12) controlling reaction chamber (30) interior ion energy and Energy distribution; The frequency poor frequency being less than described first radio frequency source (11) at certain intervals of described second radio frequency source (12).
8. as claimed in claim 7 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, the optional frequency of described first radio frequency source (11) comprises 27MHz, 40MHz, 60MHz, 100MHz or 120MHz; The optional frequency of described second radio frequency source (12) comprises 13MHz, 2MHz or 400KHz.
9. as claimed in claim 7 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, described drive electrode is included in the top electrode (32) and bottom electrode (31) that be arranged in parallel in described reaction chamber (30);
Described first radio frequency source (11), is applied to one of described top electrode (32) or bottom electrode (31) by described matching box; Described match circuit and harmonic controling device (21) is configured with for described first radio frequency source (11) in described matching box;
Described second radio frequency source (12), by the matching box of same or other setting, is applied on described top electrode (32) or bottom electrode (31), and is applied in identical or different described radio frequency electrode with described first radio frequency source (11); Described match circuit is configured with for described second radio frequency source (12) in described matching box.
10. as claimed in claim 9 for the radio system of the controlled harmonic wave of plasma generator, it is characterized in that, adjust the described harmonic controling device (21) of the harmonic impedance of the first radio frequency source (11), between its output being arranged at the match circuit of described first radio frequency source (11) and described radio frequency electrode;
Or, between the output that described harmonic controling device (21) is arranged at the match circuit of described second radio frequency source (12) and described radio frequency electrode, and be connected with described first radio frequency source (11);
Or, between the public output that described harmonic controling device (21) is arranged at the match circuit of first, second radio frequency source described and described radio frequency electrode;
Or the output of the match circuit of described first radio frequency source (11), and the output of the match circuit of described second radio frequency source (12), be connected to a harmonic controling device (21).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110064745.0A CN102686004B (en) | 2011-03-17 | 2011-03-17 | Harmonic-wave-controllable frequency system for plasma generator |
| TW100143520A TWI566644B (en) | 2011-03-17 | 2011-11-28 | A radio frequency system for controllable harmonics of a plasma generator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110064745.0A CN102686004B (en) | 2011-03-17 | 2011-03-17 | Harmonic-wave-controllable frequency system for plasma generator |
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| CN102686004A CN102686004A (en) | 2012-09-19 |
| CN102686004B true CN102686004B (en) | 2015-05-13 |
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| CN107454731B (en) * | 2016-05-30 | 2019-10-11 | 北京北方华创微电子装备有限公司 | Radio frequency automatic impedance matcher and semiconductor equipment |
| CN111128668B (en) * | 2019-12-17 | 2022-03-04 | 西安航天动力研究所 | Impedance matching system and method for radio frequency plasma |
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| CN1577730A (en) * | 2003-07-14 | 2005-02-09 | 周星工程股份有限公司 | Apparatus using hybrid coupled plasma |
| CN1852632A (en) * | 2006-06-07 | 2006-10-25 | 大连理工大学 | Substrate electrod tunning type radio-frequency sensitive coupling plasma source |
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| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
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| JPH10241895A (en) * | 1996-11-04 | 1998-09-11 | Applied Materials Inc | Improvement of plasma process efficiency by filtering plasma sheath generation harmonic |
| US20050106873A1 (en) * | 2003-08-15 | 2005-05-19 | Hoffman Daniel J. | Plasma chamber having multiple RF source frequencies |
| AU2005304253B8 (en) * | 2004-11-12 | 2011-01-20 | Oerlikon Solar Ag Trubbach | Impedance matching of a capacitively coupled RF plasma reactor suitable for large area substrates |
| DE602008005858D1 (en) * | 2008-03-20 | 2011-05-12 | Univ Ruhr Bochum | Method for controlling ion energy in radio frequency plasmas |
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- 2011-03-17 CN CN201110064745.0A patent/CN102686004B/en active Active
- 2011-11-28 TW TW100143520A patent/TWI566644B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577730A (en) * | 2003-07-14 | 2005-02-09 | 周星工程股份有限公司 | Apparatus using hybrid coupled plasma |
| CN1909184A (en) * | 2005-08-05 | 2007-02-07 | 中微半导体设备(上海)有限公司 | RF matching coupling network for vacuum reaction chamber and its configuration method |
| CN1852632A (en) * | 2006-06-07 | 2006-10-25 | 大连理工大学 | Substrate electrod tunning type radio-frequency sensitive coupling plasma source |
| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
| CN101770922A (en) * | 2008-12-31 | 2010-07-07 | 财团法人工业技术研究院 | Capacitance coupling type radiofrequency plasma source |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI566644B (en) | 2017-01-11 |
| CN102686004A (en) | 2012-09-19 |
| TW201240529A (en) | 2012-10-01 |
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