CN102683532B - 一种含有图形化dbr结构的衬底 - Google Patents
一种含有图形化dbr结构的衬底 Download PDFInfo
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- CN102683532B CN102683532B CN201110058547.3A CN201110058547A CN102683532B CN 102683532 B CN102683532 B CN 102683532B CN 201110058547 A CN201110058547 A CN 201110058547A CN 102683532 B CN102683532 B CN 102683532B
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- 230000008020 evaporation Effects 0.000 claims abstract description 16
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- 238000000576 coating method Methods 0.000 claims description 35
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 14
- 230000000737 periodic effect Effects 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
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- 229910002601 GaN Inorganic materials 0.000 description 11
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 11
- 239000004038 photonic crystal Substances 0.000 description 10
- 238000005286 illumination Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
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- 238000009826 distribution Methods 0.000 description 4
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- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
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- 230000002269 spontaneous effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
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- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
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CN201110058547.3A CN102683532B (zh) | 2011-03-11 | 2011-03-11 | 一种含有图形化dbr结构的衬底 |
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CN201110058547.3A CN102683532B (zh) | 2011-03-11 | 2011-03-11 | 一种含有图形化dbr结构的衬底 |
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CN102683532A CN102683532A (zh) | 2012-09-19 |
CN102683532B true CN102683532B (zh) | 2015-02-18 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103441202A (zh) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | 具有图形化DBR结构的GaN衬底及其制备方法 |
CN104952991B (zh) * | 2014-03-25 | 2018-01-09 | 茂邦电子有限公司 | 覆晶式发光二极管及其制造方法以及其覆晶式封装结构 |
CN104269482B (zh) * | 2014-09-24 | 2017-03-01 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104218129A (zh) * | 2014-09-24 | 2014-12-17 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104269479B (zh) * | 2014-09-24 | 2017-01-25 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
CN104241478B (zh) * | 2014-09-24 | 2017-03-22 | 杭州士兰明芯科技有限公司 | Led衬底结构及其制作方法 |
DE102014115740A1 (de) | 2014-10-29 | 2016-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
TWI605616B (zh) * | 2015-08-12 | 2017-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
CN105957928B (zh) * | 2016-05-31 | 2018-10-09 | 华灿光电股份有限公司 | 一种谐振腔发光二极管及其制造方法 |
CN108598232B (zh) * | 2018-01-19 | 2024-05-10 | 浙江大学 | 一种提高GaN基LED发光效率的蓝宝石图形衬底结构 |
CN111969002A (zh) * | 2020-08-28 | 2020-11-20 | 上海大学 | 一种超清柔性发光显示器及其制备方法 |
CN112820806B (zh) * | 2020-12-25 | 2022-12-20 | 福建晶安光电有限公司 | 一种图形衬底及其制作方法以及led结构及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101471404A (zh) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | 提高芯片出光效率的方法及蓝宝石图形衬底的制备方法 |
CN101540361A (zh) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 硅衬底上生长的铝镓铟磷led外延片及其制备方法 |
CN101740677A (zh) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | 图形化衬底的GaN基LED外延片及该外延片的制备方法 |
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KR101030659B1 (ko) * | 2006-03-10 | 2011-04-20 | 파나소닉 전공 주식회사 | 발광 소자 |
JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
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CN101471404A (zh) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | 提高芯片出光效率的方法及蓝宝石图形衬底的制备方法 |
CN101740677A (zh) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | 图形化衬底的GaN基LED外延片及该外延片的制备方法 |
CN101540361A (zh) * | 2009-04-29 | 2009-09-23 | 山东华光光电子有限公司 | 硅衬底上生长的铝镓铟磷led外延片及其制备方法 |
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