CN100375304C - 高提取效率的半导体发光二极管结构及其制备方法 - Google Patents
高提取效率的半导体发光二极管结构及其制备方法 Download PDFInfo
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- CN100375304C CN100375304C CNB2006101140809A CN200610114080A CN100375304C CN 100375304 C CN100375304 C CN 100375304C CN B2006101140809 A CNB2006101140809 A CN B2006101140809A CN 200610114080 A CN200610114080 A CN 200610114080A CN 100375304 C CN100375304 C CN 100375304C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 19
- 239000000463 material Substances 0.000 claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 229910020776 SixNy Inorganic materials 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 23
- 239000002131 composite material Substances 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101140809A CN100375304C (zh) | 2006-10-27 | 2006-10-27 | 高提取效率的半导体发光二极管结构及其制备方法 |
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Application Number | Priority Date | Filing Date | Title |
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CNB2006101140809A CN100375304C (zh) | 2006-10-27 | 2006-10-27 | 高提取效率的半导体发光二极管结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN1945862A CN1945862A (zh) | 2007-04-11 |
CN100375304C true CN100375304C (zh) | 2008-03-12 |
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CNB2006101140809A Expired - Fee Related CN100375304C (zh) | 2006-10-27 | 2006-10-27 | 高提取效率的半导体发光二极管结构及其制备方法 |
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CN (1) | CN100375304C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102280551B (zh) * | 2010-06-08 | 2015-08-05 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管及其制造方法 |
CN102280552B (zh) * | 2010-06-14 | 2015-06-03 | 鸿富锦精密工业(深圳)有限公司 | 发光二极管晶粒及其制作方法 |
CN106025012A (zh) * | 2016-07-26 | 2016-10-12 | 湘能华磊光电股份有限公司 | 一种led芯片的制备方法及采用该方法制备的led芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003107241A (ja) * | 2001-09-28 | 2003-04-09 | Nagoya Industrial Science Research Inst | 多層反射膜 |
US6720585B1 (en) * | 2001-01-16 | 2004-04-13 | Optical Communication Products, Inc. | Low thermal impedance DBR for optoelectronic devices |
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2006
- 2006-10-27 CN CNB2006101140809A patent/CN100375304C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720585B1 (en) * | 2001-01-16 | 2004-04-13 | Optical Communication Products, Inc. | Low thermal impedance DBR for optoelectronic devices |
JP2003107241A (ja) * | 2001-09-28 | 2003-04-09 | Nagoya Industrial Science Research Inst | 多層反射膜 |
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CN1945862A (zh) | 2007-04-11 |
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Owner name: BEIJING TAISHIXINGUANG SCIENCE CO., LTD. Free format text: FORMER OWNER: BEIJING POLYTECHNIC UNIV. Effective date: 20081024 |
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Effective date of registration: 20081024 Address after: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer in the south of 1-4 Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: No. 100 Ping Park, Beijing, Chaoyang District Patentee before: Beijing University of Technology |
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Address after: No. 1 North Ze street, Beijing Economic Development Zone, Beijing Patentee after: Beijing TimesLED Technology Co.,Ltd. Address before: Branch of Beijing economic and Technological Development Zone two Beijing street, No. 4 Building 2 layer in the south of 1-4 Patentee before: Beijing TimesLED Technology Co.,Ltd. |
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Granted publication date: 20080312 Termination date: 20151027 |
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