CN102683517A - Film LED (light-emitting diode) chip device as well as manufacturing method and application thereof - Google Patents
Film LED (light-emitting diode) chip device as well as manufacturing method and application thereof Download PDFInfo
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- CN102683517A CN102683517A CN2012101039546A CN201210103954A CN102683517A CN 102683517 A CN102683517 A CN 102683517A CN 2012101039546 A CN2012101039546 A CN 2012101039546A CN 201210103954 A CN201210103954 A CN 201210103954A CN 102683517 A CN102683517 A CN 102683517A
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Abstract
The invention provides a film LED (light-emitting diode) chip device, comprising a GaN-based epitaxial film base which is provided with an etching groove, and a fixed film which is coated on a GaN-based epitaxial film, wherein a metal reflection layer is attached to the surface of the P-shaped semiconductor layer of the GaN-based epitaxial film base, passive films are deposited on the metal reflection layer and the GaN-based epitaxial film base to form the GaN-based epitaxial film, the passive film on the surface of the metal reflection layer and the passive film on the bottom surface of the etching groove are respectively provided with a hollowed-out area, a P pole multilayer metal bonding layer and a N pole multilayer metal bonding layer are respectively arranged on the corresponding hollowed-out area, and a P pole conductive support thick metal layer and an N pole conductive support thick metal layer are respectively arranged on the P pole multilayer metal bonding layer and the N pole multilayer metal bonding layer. The invention also provides a manufacturing method and application of the film LED chip device. According to the invention, the occurrence rate of wafer fracture and the probability of wafer deformation in the subsequent laser stripping process are reduced, and the yield of products is improved.
Description
Technical field
The present invention relates to the LED technical field, a kind of specifically film LED chip device and manufacturing approach and application.
Background technology
Existing film LED chip device is on the basis of traditional inverted structure chip, utilizes PRK to peel off substrate technology the substrate (Sapphire Substrate or SiC substrate) of growth GaN material is peeled off, and exposes the LED membrane structure.
See also Fig. 1; Traditional film LED chip device has following problem: be used in the inverted structure chip to combine have unfilled space 4 between the metal salient point 2 of GaN epitaxial loayer film 1 and flip-chip substrate 3; GaN epitaxial loayer film 1 part lacks effectively support and heat sink; Easy mechanical oscillation or the thermal effect of moment owing to moment causes breaking of chip or structural change to cause losing efficacy when carrying out laser lift-off like this, finally causes the finished product yield of film LED chip device low.
See also Fig. 2, traditional film LED chip device needs that 5 one ground of chip and substrate are carried out the unit and separates when laser lift-off, and this process speed is slow, length consuming time, the realization that is not easy to produce in batches; And, because the unit that before laser lift-off, carried out separates, substrate being divided into small individuals, the substrate after peeling off can't recycling, causes the wasting of resources, and increases production cost.
Summary of the invention
Deficiency and defective to above prior art the object of the present invention is to provide a kind of method for manufacturing film LED chip device.
Another object of the present invention is to provide a kind of film LED chip device.
A purpose more of the present invention is to provide a kind of application of film LED chip device.
The objective of the invention is through adopting following technical scheme to realize:
A kind of method for manufacturing film LED chip device may further comprise the steps:
A, on substrate, grow successively n type semiconductor layer, active layer, p type semiconductor layer are formed GaN base epitaxial film basic unit with this;
B, etched recesses, this etched recesses extends to n type semiconductor layer along the surface of p type semiconductor layer, and this n type semiconductor layer is exposed;
C, at the metallic reflector of the surface attachment of p type semiconductor layer one with its ohmic contact;
D, etching scribing groove, this scribing groove extend to the faying face of substrate and n type semiconductor layer along the surface of metallic reflector, basic unit is divided into some unit with the basic epitaxial film of whole GaN;
E, along each surface that metallic reflector and GaN base epitaxial film exposes the passivating film with each side deposition one insulation, form GaN base epitaxial film;
The passivating film of the removal metallic reflection laminar surface of f, part and the passivating film of etched recesses bottom surface expose metallic reflector and n type semiconductor layer;
G, deposit a P utmost point multiple layer metal adhesive layer, deposit a N utmost point multiple layer metal adhesive layer in the position that n type semiconductor layer exposes in the position that metallic reflector exposes;
H, connect P utmost point conductive supporting thick metal layers and connect N utmost point conductive supporting thick metal layers in N utmost point multiple layer metal adhesive layer electricity in P utmost point multiple layer metal adhesive layer electricity; Then, the after-baking of coating insulating material solidify to form fixedly film on GaN base epitaxial film; Remove the fixedly film in the scribing groove, and make an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers expose to fixedly film, process the basic epitaxial film device of full wafer GaN at the bottom of the belt material; Perhaps,
On GaN base epitaxial film, be coated with insulating material, heat treatment for solidification forms fixedly film; Remove in the scribing groove and the fixedly film on P utmost point multiple layer metal adhesive layer and the N utmost point multiple layer metal adhesive layer; And the P utmost point conductive supporting thick metal layers that setting is connected with P utmost point multiple layer metal adhesive layer electricity reaches the N utmost point conductive supporting thick metal layers that is connected with N utmost point multiple layer metal adhesive layer electricity; One end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers exposes to fixedly film, processes the full wafer GaN base epitaxial film device at the bottom of the belt material;
I, above-mentioned full wafer GaN base epitaxial film device is fixed on the blue film, at the bottom of the laser ablation peeling liner, behind the substrate desquamation, the full wafer GaN base epitaxial film device isolation of cutting apart through the scribing groove is a plurality of film LED chip devices.
As optimal technical scheme of the present invention, the degree of depth of said etched recesses is 0.5 μ m-10 μ m, and width is 5 μ m-200 μ m.
As optimal technical scheme of the present invention, said c step also comprises a step: said metallic reflector and GaN base epitaxial film are put into N
2Middle annealing in process.
As optimal technical scheme of the present invention, said metallic reflector is the Ag material; Perhaps, the alloy material of forming for the metal among Al, A g, Ni, Au, Cu, Pd, the Rh; The thickness of this metallic reflector is 20nm-1000nm.
As optimal technical scheme of the present invention, said passivating film is SiO
2Perhaps be Si
3N
4Material, the thickness of this passivating film are 50nm-5000nm.
As optimal technical scheme of the present invention, said P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer comprise adhesion layer, barrier layer and soakage layer respectively.
As optimal technical scheme of the present invention, said adhesion layer is Ti, Cr or Al material; This barrier layer is Ni or Pt material; This soakage layer is the Au material.
As optimal technical scheme of the present invention, said fixedly film is an epoxide resin material or for epoxide resin material with lithography performance or be glass material with lithography performance, this fixedly the thickness of film be 10 μ m-200 μ m.
As optimal technical scheme of the present invention, when said fixedly film was epoxide resin material, this h step may further comprise the steps:
At first, adopt patterned electricity depositing process or stud bump welding procedure on P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer, to generate the P utmost point conductive supporting thick metal layers that is connected with this P utmost point multiple layer metal adhesive layer electricity respectively and reach the N utmost point conductive supporting thick metal layers that is connected with this N utmost point multiple layer metal adhesive layer electricity;
Then, rotary coating epoxide resin material on GaN base epitaxial film, and in 50 ℃ to 300 ℃ temperature, this epoxide resin material is heat-treated, make epoxide resin material solidify to form fixedly film;
At last, adopt photoetching, development and dry method etch technology, the epoxide resin material of removing filling in the scribing groove reaches the fixedly part epoxy material on film surface, and an end of P utmost point conductive supporting thick metal layers and N utmost point conductive supporting thick metal layers is exposed.
As optimal technical scheme of the present invention, said fixedly film is to have the epoxide resin material of lithography performance or is that this h step may further comprise the steps when having the glass material of lithography performance:
At first, the glass material that rotary coating has the epoxide resin material of lithography performance or has lithography performance on GaN base epitaxial film;
Then, adopt exposure and developing process to remove and P utmost point multiple layer metal adhesive layer and the corresponding part coating material of N utmost point multiple layer metal adhesive layer, form the groove that this P utmost point multiple layer metal adhesive layer and this N utmost point multiple layer metal adhesive layer are exposed; And in 50 ℃ to 300 ℃ temperature, this epoxide resin material or glass material are heat-treated, make epoxide resin material or glass material solidify to form fixedly film;
At last, remove the epoxide resin material or the glass material of filling in the scribing groove; Simultaneously; Adopt the patterned electricity depositing process in groove, to generate P utmost point conductive supporting thick metal layers that is connected with P utmost point multiple layer metal adhesive layer electricity and the N utmost point conductive supporting thick metal layers that is connected with N utmost point multiple layer metal adhesive layer electricity, and an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers protrude from fixedly film.
As optimal technical scheme of the present invention; Said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers are wherein one or more the combination in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and the thickness of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers is 1 μ m-200 μ m.
As optimal technical scheme of the present invention, said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers with the Au material layer as electroplating end layer.
As optimal technical scheme of the present invention, Wavelength of Laser is less than the emission wavelength of GaN semi-conducting material in the said i step.
As optimal technical scheme of the present invention, also comprise a step after the said i step: roughened is carried out on the surface to n type semiconductor layer; Perhaps, at surface deposition one passivation layer of n type semiconductor layer, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
A kind of film LED chip device comprises:
The GaN base epitaxial film basic unit that forms successively by n type semiconductor layer, active layer, p type semiconductor layer;
Etched recesses, this etched recesses extends to n type semiconductor layer along the surface of p type semiconductor layer;
The surface attachment one of this p type semiconductor layer and the metallic reflector of its ohmic contact;
The passivating film that each surface of this metallic reflector and GaN base epitaxial film basic unit and each side deposit an insulation forms GaN base epitaxial film;
Be positioned at the passivating film of metallic reflection laminar surface and the passivating film of etched recesses bottom surface and respectively be provided with hollow out zone;
The hollow out zone that P utmost point multiple layer metal adhesive layer is located at the passivating film of metallic reflection laminar surface is connected with this metallic reflector electricity; The hollow out zone that N utmost point multiple layer metal adhesive layer is located at the passivating film of etched recesses bottom surface is connected with this n type semiconductor layer electricity;
Be respectively equipped with P utmost point conductive supporting thick metal layers and the N utmost point conductive supporting thick metal layers that electricity is connected on this P utmost point multiple layer metal adhesive layer and the N utmost point multiple layer metal adhesive layer;
Fixing film, it is coated on the GaN base epitaxial film, and an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers exposes to this fixedly film.
As optimal technical scheme of the present invention, the degree of depth of said etched recesses is 0.5 μ m-10 μ m, and width is 5 μ m-200 μ m.
As optimal technical scheme of the present invention, said metallic reflector is the Ag material; Perhaps, the alloy material of forming for the metal among Al, A g, Ni, Au, Cu, Pd, the Rh; The thickness of this metallic reflector is 20nm-1000nm.
As optimal technical scheme of the present invention, said passivating film is SiO
2Perhaps be Si
3N
4Material, the thickness of this passivating film are 50nm-5000nm.
As optimal technical scheme of the present invention, said P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer comprise adhesion layer, barrier layer and soakage layer respectively.
As optimal technical scheme of the present invention, said adhesion layer is Ti, Cr or Al material; This barrier layer is Ni or Pt material; This soakage layer is the Au material.
As optimal technical scheme of the present invention, said fixedly film is an epoxide resin material or for epoxide resin material with lithography performance or be glass material with lithography performance, this fixedly the thickness of film be 10 μ m-200 μ m.
As optimal technical scheme of the present invention; Said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers are wherein one or more the combination in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and the thickness of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers is 1 μ m-200 μ m.
As optimal technical scheme of the present invention, said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers with the Au material layer as electroplating end layer.
As optimal technical scheme of the present invention, the surface of said n type semiconductor layer is the surface of roughening; Perhaps, deposit a passivation layer, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
The application of above-mentioned film LED chip device; Be applied to make film LED chip, may further comprise the steps: with the P utmost point conductive supporting thick metal layers of film LED chip device and N utmost point conductive supporting thick metal layers respectively with the P electrode land and the N electrode land contraposition wafer bonding of electric polarization flip-chip substrate.
Compared with prior art; Be filled with fixedly film of insulation in the space between film LED chip device among the present invention and the electric polarization flip-chip substrate; Both realized that film LED chip device was connected with electricity between the electric polarization flip-chip substrate, filled the space between film LED chip device and the electric polarization flip-chip substrate again, solved conventional films led chip device when carrying out laser lift-off; Owing to mechanical oscillation or the thermal effect of moment of moment makes wafer breakage or structural change cause the problem that lost efficacy; Thereby reduce the incidence and the deformation probability of wafer breakage in the follow-up laser lift-off, promote yield of products, and owing to the overburden operation that can carry out whole to substrate; Substrate after peeling off can be recycled, and has reduced production cost to a certain extent.
And the fixedly film of led chip rotary coating is isolated through etching scribing groove, does not need laser cutting Sapphire Substrate or support.So led chip can separate into difformity, size; As, the led chip of hexagon, circle; Hexagonal led chip has the best light angle of departure, has further improved the performance of led chip.Can make difform led chip, this is this technological unique function; And more simple process steps realization has also been adopted in the manufacturing of led chip.
Epoxy resin with lithography performance that rotary coating is non-conductive or glass material with lithography performance have high heat conduction as fixing film, solidify the back and hang down convergent force and low stress; Good adhesive strength; Fill in good gap, and chemical resistance has the high transparent and optical properties of low light absorption; And packing material does not have the plurality of advantages of toxicity, can improve the performance of led chip greatly.
Description of drawings
Fig. 1 is the structural representation of traditional film LED chip device.
Fig. 2 is the sketch map at the bottom of the traditional film LED chip device peeling liner time.
Fig. 3 is the structural representation of single film LED chip device among the present invention.
Fig. 4 is the process flow diagram of first embodiment of method for manufacturing film LED chip device among the present invention.
Fig. 5 is the process flow diagram of second embodiment of method for manufacturing film LED chip device among the present invention.
The sketch map that Fig. 6 combines with the electric polarization flip-chip substrate for film LED chip device among the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is described further:
See also Fig. 3, this film LED chip device comprises:
The GaN base epitaxial film basic unit 10 that forms successively by n type semiconductor layer 11, active layer 12, p type semiconductor layer 13.The external quantum efficiency of the film LED chip device of processing for raising, the surface of this n type semiconductor layer 11 is the surface 22 of roughening; Perhaps, at the surface deposition of n type semiconductor layer 11 passivation layer (figure does not show) is arranged, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
Etched recesses 14, this etched recesses 14 extends to n type semiconductor layer 11 along the surface of p type semiconductor layer 13.
The surface attachment one of this p type semiconductor layer 13 and the metallic reflector 15 of its ohmic contact.
The passivating film 16 that each surface of this metallic reflector 15 and GaN base epitaxial film basic unit 10 and each side deposit an insulation, formation GaN base epitaxial film.
Be positioned at the passivating film 16 on metallic reflector 15 surfaces and the passivating film 16 of etched recesses 14 bottom surfaces and respectively be provided with hollow out zone 32,33 (seeing also Fig. 4).
The hollow out zone 32 that P utmost point multiple layer metal adhesive layer 17 is located at the passivating film 16 on metallic reflector 15 surface is connected with these metallic reflector 15 electricity; The hollow out zone 33 that N utmost point multiple layer metal adhesive layer 18 is located at the passivating film 16 of etched recesses 14 bottom surfaces is connected with these n type semiconductor layer 11 electricity.
Be respectively equipped with P utmost point conductive supporting thick metal layers 19 and N utmost point conductive supporting thick metal layers 20 that electricity is connected on this P utmost point multiple layer metal adhesive layer 17 and the N utmost point multiple layer metal adhesive layer 18.
See also Fig. 4, be first embodiment of method for manufacturing film LED chip device, ordinary epoxy resin is adopted in its insulation fixedly film, may further comprise the steps:
Step 101: on substrate 23 (like Sapphire Substrate or SiC substrate), grow successively n type semiconductor layer 11, active layer 12, p type semiconductor layer 13, form GaN base epitaxial film basic unit 10 with this.
Step 102: adopt technology etched recesses 14 in GaN base epitaxial film basic unit 10 of dry etching, this etched recesses 14 extends to n type semiconductor layer 11 along the surface of p type semiconductor layer 13, and this n type semiconductor layer 11 is exposed.The degree of depth of said etched recesses 14 is 0.5 μ m-10 μ m, and width is 5 μ m-200 μ m.
Step 103: at the surface attachment one of p type semiconductor layer 13 and the metallic reflector 15 of its ohmic contact.These metallic reflector 15 first-selected Ag materials; Perhaps, also can be the alloy material that the metal among Al, Ag, Ni, Au, Cu, Pd, the Rh is formed; The thickness of this metallic reflector 15 is 20nm-1000nm.Simultaneously, be ohmic contact and the adhesive force of reinforcement metal reflector 15, can this metallic reflector 15 be put into N 10 (comprising substrate 23) with GaN base epitaxial film basic unit with p type semiconductor layer 13 surfaces
2In carry out annealing in process.
Step 104: etching scribing groove 24, this scribing groove 24 extend to the faying face of substrate 23 and n type semiconductor layer 11 along the surface of metallic reflector 15, and GaN base epitaxial film basic unit 10 is divided into some unit.
Step 105:, form GaN base epitaxial film along metallic reflector 15 and GaN base epitaxial film basic unit 10 each surface of exposing and passivating film 16 that each side deposition one insulate.This passivating film 16 is adopted as SiO
2Perhaps be Si
3N
4Material, the thickness of this passivating film 16 are 50nm-5000nm.
Step 106:, form hollow out zone 32,33 respectively and expose metallic reflector 15 and n type semiconductor layer 11 through the passivating film 16 on local removal metallic reflector 15 surfaces of photoengraving pattern metallization processes and wet etching process and the passivating film 16 of etched recesses 14 bottom surfaces.
Step 107: at hollow out zone 32 depositions, the one P utmost point multiple layer metal adhesive layer 17 that metallic reflector 15 exposes, at hollow out zone 33 depositions, the one N utmost point multiple layer metal adhesive layer 18 that n type semiconductor layer 11 exposes.This P utmost point multiple layer metal adhesive layer 17 comprises adhesion layer, barrier layer and soakage layer respectively with N utmost point multiple layer metal adhesive layer 18.This adhesion layer is Ti, Cr or Al material; This barrier layer is Ni or Pt material; This soakage layer is the Au material.
This P utmost point multiple layer metal adhesive layer 17 mainly is for follow-up plating prepares the conductive supporting thick metal layers pedestal to be provided with N utmost point multiple layer metal adhesive layer 18.Simultaneously, this P utmost point multiple layer metal adhesive layer 17 can play the effect of protection metallic reflector 15; This N utmost point multiple layer metal adhesive layer 18 can be realized ohmic contact with n type semiconductor layer 11.
In the present embodiment, this N utmost point multiple layer metal adhesive layer 18 extends to from the bottom of etched recesses 14 and this P utmost point multiple layer metal adhesive layer 17 position of level mutually, so that generate the N utmost point conductive supporting thick metal layers 20 in the subsequent handling.But in actual production process, this N utmost point multiple layer metal adhesive layer 18 also can be confined to the bottom of etched recesses 14, and the N utmost point conductive supporting thick metal layers 20 in the subsequent handling directly extends in etched recesses 14.
Step 108: adopt patterned electricity depositing process or stud bump welding (Stud Bump) technology on P utmost point multiple layer metal adhesive layer 17 and N utmost point multiple layer metal adhesive layer 18, to generate the P utmost point conductive supporting thick metal layers 19 that is connected with these P utmost point multiple layer metal adhesive layer 17 electricity respectively and reach the N utmost point conductive supporting thick metal layers 20 that is connected with these N utmost point multiple layer metal adhesive layer 18 electricity.This P utmost point conductive supporting thick metal layers 19 and these N utmost point conductive supporting thick metal layers 20 first-selected NiCo alloy materials also can be wherein one or more the combinations in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and with the Au material layer as electroplating end layer.This P utmost point conductive supporting thick metal layers 19 is 1 μ m-200 μ m with the thickness of this N utmost point conductive supporting thick metal layers 20.
Step 109: rotary coating epoxide resin material on GaN base epitaxial film; Be coated with the thickness that reaches desirable through high speed rotating repeatedly; And in 50 ℃ to 300 ℃ temperature, this epoxide resin material is heat-treated, make epoxide resin material solidify to form fixedly film 21.More excellent, this fixedly the thickness of film 21 be 10 μ m-200 μ m.
Step 110: the epoxide resin material that adopts photoetching, development and dry method etch technology to remove filling in the scribing groove 24 reaches the fixedly part epoxy material on film 21 surfaces; A P utmost point conductive supporting thick metal layers 19 and an end of N utmost point conductive supporting thick metal layers 20 are exposed, process the full wafer GaN base epitaxial film device at the bottom of the belt material.
Step 111: above-mentioned full wafer GaN base epitaxial film device is fixed on the blue film 25, and through at the bottom of the laser ablation peeling liner 23, after substrate 23 was peeled off, through cutting apart of scribing groove 24, full wafer GaN base epitaxial film device isolation was a plurality of film LED chip devices.
At the bottom of carrying out the laser ablation peeling liner 23 o'clock, optical maser wavelength should be less than the emission wavelength of GaN semi-conducting material, the concrete laser that comprises 193nm, 248nm, 266nm, 355nm wavelength.Laser ablation ends in the faying face of n type semiconductor layer 11 and substrate 23, and with at the bottom of this whole peeling liner 23, and control does not damage substrate 23.
Step 112: be to improve the external quantum efficiency of film LED chip device,, also can carry out a step, roughened is carried out on the surface of n type semiconductor layer 11, form the surface 22 of a roughening at the bottom of the peeling liner after 23; Perhaps, at surface deposition one passivation layer (figure does not show) of this n type semiconductor layer 11, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
See also Fig. 5, for second embodiment of method for manufacturing film LED chip device, its insulation is epoxide resin material with lithography performance of film employing fixedly, as: SU-8, Photosensitive Benzocyclobutene (photosensitive benzocyclobutene) etc.; Perhaps, for having the glass material of lithography performance, as: the sensitization sol-gel glass.Present embodiment is that preferred embodiment is explained with the epoxide resin material that employing has lithography performance.
When employing had the epoxide resin material of lithography performance, its preorder implementation step was identical with 101 steps-107 step of first embodiment, and difference is, comprising:
Step 208: the epoxide resin material that rotary coating has lithography performance on GaN base epitaxial film is coated with the thickness that reaches desirable through high speed rotating repeatedly.More excellent, this fixedly the thickness of film 21 be 10 μ m-200 μ m.
Step 209: adopt exposure and developing process to remove and P utmost point multiple layer metal adhesive layer 17 and N utmost point multiple layer metal adhesive layer 18 corresponding part coating materials, form the groove 26 that this P utmost point multiple layer metal adhesive layer 17 and this N utmost point multiple layer metal adhesive layer 18 are exposed; And in 50 to 300 ℃ temperature, heat-treat, make this epoxide resin material solidify to form fixedly film 21 with lithography performance.
Step 210: the fixedly membrane material of removing filling in the scribing groove 24; Simultaneously; Employing patterned electricity depositing process forms P utmost point conductive supporting thick metal layers 29 that is connected with P utmost point multiple layer metal adhesive layer 17 electricity and the N utmost point conductive supporting thick metal layers 20 that is connected with N utmost point multiple layer metal adhesive layer 18 electricity in groove 26; And this P utmost point conductive supporting thick metal layers 19 protrudes from fixedly film 21 with an end of this N utmost point conductive supporting thick metal layers 20, processes the basic epitaxial film device of full wafer GaN at the bottom of the belt material.
This P utmost point conductive supporting thick metal layers 19 and these N utmost point conductive supporting thick metal layers 20 first-selected NiCo alloy materials also can be wherein one or more the combinations in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and with the Au material layer as electroplating end layer.This P utmost point conductive supporting thick metal layers 19 is 1 μ m-200 μ m with the thickness of this N utmost point conductive supporting thick metal layers 20.
After this step, 111 steps of subsequent implementation step and first embodiment, 112 identical are just no longer given unnecessary details at this.Simultaneously, adopt when having the glass material of lithography performance, implementation step is identical with the implementation step that adopts the epoxide resin material with lithography performance, therefore, also no longer gives unnecessary details at this.
See also Fig. 6, the sketch map that combines with the electric polarization flip-chip substrate for film LED chip device.
When making film LED chip; With the P utmost point conductive supporting thick metal layers of film LED chip device 19 and N utmost point conductive supporting thick metal layers 20 respectively with the P electrode land 28 and N electrode land 29 contraposition wafer bondings of electric polarization flip-chip substrate 27; Thereby make the conductive supporting thick metal layers produce molten condition and form with electrode pad on the electrode flip-chip substrate 27 that good electricity contact and the mechanics combination; Promptly, just be connected P, N electrode land 28,29 and PN dielectric isolation layer 30 with N utmost point conductive supporting thick metal layers 20 through conductive supporting thick metal layers 19 through P electrode land 28 and N electrode land 29 on conductive supporting thick metal layers 19 and the N utmost point conductive supporting thick metal layers 20 difference connection electrode flip-chip substrates 27.This electric polarization flip-chip substrate 27 prepared beforehand is accomplished, and the circuit that comprises corresponding film LED chip device distributes and corresponding P, N pad.Electric polarization flip-chip substrate 27 has numerous embodiments, and for example, baseplate material can adopt metal material or nonmetallic materials.
The fixedly film 21 of insulation is wrapped in all metal structure sidewalls, is filled between film LED chip device and the electric polarization flip-chip substrate 27, has guaranteed that film LED chip device is connected with the insulation of 27 of electric polarization flip-chip substrates.Simultaneously, through the fixing film 21 of the insulation of filling, reduced the incidence of wafer breakage in the follow-up laser lift-off; To improve the product yields; And owing to the overburden operation that can carry out whole to substrate 23, the substrate 23 after peeling off can be recycled, and has reduced production cost to a certain extent.
The above is merely preferred embodiment of the present invention, is not to be used for limiting practical range of the present invention; Every according to equivalence variation and modification that the present invention did, all covered by the scope of claims of the present invention.
Claims (25)
1. a method for manufacturing film LED chip device is characterized in that, may further comprise the steps:
A, on substrate, grow successively n type semiconductor layer, active layer, p type semiconductor layer are formed GaN base epitaxial film basic unit with this;
B, etched recesses, this etched recesses extends to n type semiconductor layer along the surface of p type semiconductor layer, and this n type semiconductor layer is exposed;
C, at the metallic reflector of the surface attachment of p type semiconductor layer one with its ohmic contact;
D, etching scribing groove, this scribing groove extend to the faying face of substrate and n type semiconductor layer along the surface of metallic reflector, basic unit is divided into some unit with the basic epitaxial film of whole GaN;
E, along each surface that metallic reflector and GaN base epitaxial film exposes the passivating film with each side deposition one insulation, form GaN base epitaxial film;
The passivating film of the removal metallic reflection laminar surface of f, part and the passivating film of etched recesses bottom surface expose metallic reflector and n type semiconductor layer;
G, deposit a P utmost point multiple layer metal adhesive layer, deposit a N utmost point multiple layer metal adhesive layer in the position that n type semiconductor layer exposes in the position that metallic reflector exposes;
H, connect P utmost point conductive supporting thick metal layers and connect N utmost point conductive supporting thick metal layers in N utmost point multiple layer metal adhesive layer electricity in P utmost point multiple layer metal adhesive layer electricity; Then, the after-baking of coating insulating material solidify to form fixedly film on GaN base epitaxial film; Remove the fixedly film in the scribing groove, and make an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers expose to fixedly film, process the basic epitaxial film device of full wafer GaN at the bottom of the belt material; Perhaps,
On GaN base epitaxial film, be coated with insulating material, heat treatment for solidification forms fixedly film; Remove in the scribing groove and the fixedly film on P utmost point multiple layer metal adhesive layer and the N utmost point multiple layer metal adhesive layer; And the P utmost point conductive supporting thick metal layers that setting is connected with P utmost point multiple layer metal adhesive layer electricity reaches the N utmost point conductive supporting thick metal layers that is connected with N utmost point multiple layer metal adhesive layer electricity; One end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers exposes to fixedly film, processes the full wafer GaN base epitaxial film device at the bottom of the belt material;
I, above-mentioned full wafer GaN base epitaxial film device is fixed on the blue film, at the bottom of the laser ablation peeling liner, behind the substrate desquamation, the full wafer GaN base epitaxial film device isolation of cutting apart through the scribing groove is a plurality of film LED chip devices.
2. method for manufacturing film LED chip device according to claim 1 is characterized in that: the degree of depth of said etched recesses is 0.5 μ m-10 μ m, and width is 5 μ m-200 μ m.
3. method for manufacturing film LED chip device according to claim 1 is characterized in that: said c step also comprises a step: said metallic reflector and GaN base epitaxial film are put into N
2Middle annealing in process.
4. according to claim 1 or 3 described method for manufacturing film LED chip device, it is characterized in that: said metallic reflector is the Ag material; Perhaps, the alloy material of forming for the metal among Al, Ag, Ni, Au, Cu, Pd, the Rh; The thickness of this metallic reflector is 20nm-1000nm.
5. method for manufacturing film LED chip device according to claim 1 is characterized in that: said passivating film is SiO
2Perhaps be Si
3N
4Material, the thickness of this passivating film are 50nm-5000nm.
6. method for manufacturing film LED chip device according to claim 1 is characterized in that: said P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer comprise adhesion layer, barrier layer and soakage layer respectively.
7. method for manufacturing film LED chip device according to claim 6 is characterized in that: said adhesion layer is Ti, Cr or Al material; This barrier layer is Ni or Pt material; This soakage layer is the Au material.
8. method for manufacturing film LED chip device according to claim 1; It is characterized in that: said fixedly film is an epoxide resin material or for epoxide resin material with lithography performance or be glass material with lithography performance, this fixedly the thickness of film be 10 μ m-200 μ m.
9. method for manufacturing film LED chip device according to claim 8 is characterized in that: when said fixedly film was epoxide resin material, this h step may further comprise the steps:
At first, adopt patterned electricity depositing process or stud bump welding procedure on P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer, to generate the P utmost point conductive supporting thick metal layers that is connected with this P utmost point multiple layer metal adhesive layer electricity respectively and reach the N utmost point conductive supporting thick metal layers that is connected with this N utmost point multiple layer metal adhesive layer electricity;
Then, rotary coating epoxide resin material on GaN base epitaxial film, and in 50 ℃ to 300 ℃ temperature, this epoxide resin material is heat-treated, make epoxide resin material solidify to form fixedly film;
At last, adopt photoetching, development and dry method etch technology, the epoxide resin material of removing filling in the scribing groove reaches the fixedly part epoxy material on film surface, and an end of P utmost point conductive supporting thick metal layers and N utmost point conductive supporting thick metal layers is exposed.
10. method for manufacturing film LED chip device according to claim 8 is characterized in that: said fixedly film is to have the epoxide resin material of lithography performance or is that this h step may further comprise the steps when having the glass material of lithography performance:
At first, the glass material that rotary coating has the epoxide resin material of lithography performance or has lithography performance on GaN base epitaxial film;
Then, adopt exposure and developing process to remove and P utmost point multiple layer metal adhesive layer and the corresponding part coating material of N utmost point multiple layer metal adhesive layer, form the groove that this P utmost point multiple layer metal adhesive layer and this N utmost point multiple layer metal adhesive layer are exposed; And in 50 ℃ to 300 ℃ temperature, this epoxide resin material or glass material are heat-treated, make epoxide resin material or glass material solidify to form fixedly film;
At last, remove the epoxide resin material or the glass material of filling in the scribing groove; Simultaneously; Adopt the patterned electricity depositing process in groove, to generate P utmost point conductive supporting thick metal layers that is connected with P utmost point multiple layer metal adhesive layer electricity and the N utmost point conductive supporting thick metal layers that is connected with N utmost point multiple layer metal adhesive layer electricity, and an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers protrude from fixedly film.
11. according to claim 1 or 9 or 10 described method for manufacturing film LED chip device; It is characterized in that: said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers are wherein one or more the combination in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and the thickness of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers is 1 μ m-200 μ m.
12., it is characterized in that according to claim 1 or 9 or 10 described method for manufacturing film LED chip device: said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers with the Au material layer as electroplating end layer.
13. method for manufacturing film LED chip device according to claim 1 is characterized in that: Wavelength of Laser is less than the emission wavelength of GaN semi-conducting material in the said i step.
14. method for manufacturing film LED chip device according to claim 1 is characterized in that: also comprise a step after the said i step: roughened is carried out on the surface to n type semiconductor layer; Perhaps, at surface deposition one passivation layer of n type semiconductor layer, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
15. a film LED chip device is characterized in that, comprising:
The GaN base epitaxial film basic unit that forms successively by n type semiconductor layer, active layer, p type semiconductor layer;
Etched recesses, this etched recesses extends to n type semiconductor layer along the surface of p type semiconductor layer;
The surface attachment one of this p type semiconductor layer and the metallic reflector of its ohmic contact;
The passivating film that each surface of this metallic reflector and GaN base epitaxial film basic unit and each side deposit an insulation forms GaN base epitaxial film;
Be positioned at the passivating film of metallic reflection laminar surface and the passivating film of etched recesses bottom surface and respectively be provided with hollow out zone;
The hollow out zone that P utmost point multiple layer metal adhesive layer is located at the passivating film of metallic reflection laminar surface is connected with this metallic reflector electricity; The hollow out zone that N utmost point multiple layer metal adhesive layer is located at the passivating film of etched recesses bottom surface is connected with this n type semiconductor layer electricity;
Be respectively equipped with P utmost point conductive supporting thick metal layers and the N utmost point conductive supporting thick metal layers that electricity is connected on this P utmost point multiple layer metal adhesive layer and the N utmost point multiple layer metal adhesive layer;
Fixing film, it is coated on the GaN base epitaxial film, and an end of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers exposes to this fixedly film.
16. film LED chip device according to claim 15 is characterized in that: the degree of depth of said etched recesses is 0.5 μ m-10 μ m, and width is 5 μ m-200 μ m.
17. film LED chip device according to claim 15 is characterized in that: said metallic reflector is the Ag material; Perhaps, the alloy material of forming for the metal among Al, Ag, Ni, Au, Cu, Pd, the Rh; The thickness of this metallic reflector is 20nm-1000nm.
18. film LED chip device according to claim 15 is characterized in that: said passivating film is SiO
2Perhaps be Si
3N
4Material, the thickness of this passivating film are 50nm-5000nm.
19. film LED chip device according to claim 15 is characterized in that: said P utmost point multiple layer metal adhesive layer and N utmost point multiple layer metal adhesive layer comprise adhesion layer, barrier layer and soakage layer respectively.
20. film LED chip device according to claim 19 is characterized in that: said adhesion layer is Ti, Cr or Al material; This barrier layer is Ni or Pt material; This soakage layer is the Au material.
21. film LED chip device according to claim 15; It is characterized in that: said fixedly film is an epoxide resin material or for epoxide resin material with lithography performance or be glass material with lithography performance, this fixedly the thickness of film be 10 μ m-200 μ m.
22. film LED chip device according to claim 15; It is characterized in that: said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers are wherein one or more the combination in Ni, Au, Cu, NiAu alloy, the NiCo alloy, and the thickness of this P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers is 1 μ m-200 μ m.
23. film LED chip device according to claim 15 is characterized in that: said P utmost point conductive supporting thick metal layers and this N utmost point conductive supporting thick metal layers with the Au material layer as electroplating end layer.
24. film LED chip device according to claim 15 is characterized in that: the surface of said n type semiconductor layer is the surface of roughening; Perhaps, deposit a passivation layer, this passivation layer is SiO
2Or Si
3N
4Material, its thickness are 0.1 μ m-1500 μ m.
25. application according to each described film LED chip device among the claim 15-24; It is characterized in that: be applied to make film LED chip, may further comprise the steps: with the P utmost point conductive supporting thick metal layers of film LED chip device and N utmost point conductive supporting thick metal layers respectively with the P electrode land and the N electrode land contraposition wafer bonding of electric polarization flip-chip substrate.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105047778A (en) * | 2015-08-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | Preparation method for thin-film gallium-nitride-based LED (light emitting diode) |
| CN105428489A (en) * | 2014-09-04 | 2016-03-23 | 晶能光电（江西）有限公司 | Method for preparing thin-film LED chip |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100580965C (en) * | 2007-12-12 | 2010-01-13 | 厦门市三安光电科技有限公司 | Film LED chip device based on compound low-resistance buffer structure and its making method |
| US20110233587A1 (en) * | 2010-03-24 | 2011-09-29 | Hitachi Cable, Ltd. | Light emitting diode |
| CN202178253U (en) * | 2011-05-27 | 2012-03-28 | 厦门市三安光电科技有限公司 | Array type light-emitting diode |
-
2012
- 2012-04-11 CN CN201210103954.6A patent/CN102683517B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100580965C (en) * | 2007-12-12 | 2010-01-13 | 厦门市三安光电科技有限公司 | Film LED chip device based on compound low-resistance buffer structure and its making method |
| US20110233587A1 (en) * | 2010-03-24 | 2011-09-29 | Hitachi Cable, Ltd. | Light emitting diode |
| CN202178253U (en) * | 2011-05-27 | 2012-03-28 | 厦门市三安光电科技有限公司 | Array type light-emitting diode |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236490A (en) * | 2013-04-03 | 2013-08-07 | 大连德豪光电科技有限公司 | LED flip-chip packaged device, manufacture method of LED flip-chip packaged device, and package structure using LED flip-chip packaged device |
| CN103236490B (en) * | 2013-04-03 | 2016-01-13 | 大连德豪光电科技有限公司 | LED flip chip packaging, its manufacture method and use its encapsulating structure |
| CN103618034A (en) * | 2013-11-29 | 2014-03-05 | 厦门大学 | Self-supporting vertical structural GaN-based LED chip and preparation method thereof |
| CN105428489A (en) * | 2014-09-04 | 2016-03-23 | 晶能光电（江西）有限公司 | Method for preparing thin-film LED chip |
| CN105047778A (en) * | 2015-08-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | Preparation method for thin-film gallium-nitride-based LED (light emitting diode) |
| CN106097904A (en) * | 2016-07-15 | 2016-11-09 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode display part and preparation method thereof |
| CN107742636A (en) * | 2017-10-25 | 2018-02-27 | 上海天马微电子有限公司 | A kind of display panel and display device |
| CN107742636B (en) * | 2017-10-25 | 2020-04-03 | 上海天马微电子有限公司 | Display panel and display device |
| CN109786537A (en) * | 2018-12-27 | 2019-05-21 | 华中科技大学鄂州工业技术研究院 | Full-inorganic LED encapsulation structure and preparation method thereof |
| CN111613714A (en) * | 2020-05-25 | 2020-09-01 | 深圳市华星光电半导体显示技术有限公司 | Micro light-emitting diode and manufacturing method thereof |
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