CN102683494A - Preparation method of double-sided back contact solar cell - Google Patents
Preparation method of double-sided back contact solar cell Download PDFInfo
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Abstract
The invention discloses a preparation method of a double-sided back contact solar cell, which comprises the following steps of: (1) cleaning and texturing; (2) diffusing: forming a first diffusion layer on the back surface of the silicon chip; (3) preparing barrier films on the front surface and the back surface of the silicon chip; (4) windowing in a partial area on the back surface of the silicon chip and removing the barrier film; (5) putting the silicon chip into alkali liquor, corroding and removing the first diffusion layer of the partial area; (6) removing the barrier film on the front surface of the silicon chip; (7) forming a hole; (8) diffusing: forming second diffusion layers on the front surface of the silicon chip, in the hole and in the windowed area on the back surface of the silicon chip; (9) etching; and removing the barrier films and cleaning; (10) preparing a passivation and anti-reflection film; and (11) arranging a metal electrode; and sintering. The preparation method has the advantages that the barrier films are prepared on the front surface and the back surface of the silicon chip, a peripheral area of the hole is formed by matchedly adopting windowing and corroding methods, and then the hole is formed to obtain the double-sided back contact solar cell; and the problem of short circuit at the diffused junction is avoided in the solar cell with the structure, so that the remarkable effect is obtained.
Description
Technical field
The present invention relates to a kind of preparation method of two-sided back contact solar cell, belong to the solar cell field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly a kind of cleaning, general and the most potential alternative energy source.At present; In all solar cells; Crystal silicon solar energy battery is one of solar cell that obtains business promotion on a large scale; This is that silicon solar cell is compared the solar cell of other types simultaneously because silicon materials have very abundant reserves in the earth's crust, and excellent electric property and mechanical performance are arranged.Therefore, crystal-silicon solar cell in the photovoltaic field in occupation of consequence.High efficiency is the development trend of present crystal-silicon solar cell; Through improving the passivation on surface-texturing, selective emitter junction, front surface and back of the body surface; Laser buries the transformation efficiency that technology such as grid improve solar cell; But because it needs special devices and complicated technological process, industrialization process is restricted.
At present, back contact silicon solar cell (MWT solar cell) has received everybody extensive concern, and its advantage is: because its front does not have the main grid line; Reduced the shading of battery sheet; Improved the conversion efficiency of battery sheet, when making assembly, can reduce the shading influence of welding the battery sheet; Adopt new packaged type can reduce the series resistance of battery sheet simultaneously, reduce the power loss of battery sheet.The preparation method of traditional back of the body contact crystalline silicon solar cell is: making herbs into wool, diffusion system knot, etching, cleaning, plated film, punching, printing, sintering.
On the other hand, under the situation that silicon materials are in short supply day by day now, in order fully to improve the power output of solar cell, the two-sided focus that receives light type crystalline silicon solar cell to become research.Disclose a kind of two-sided light type crystalline silicon solar cell that receives like Chinese utility model patent CN201699033U, it discloses its manufacture method in Instructions Page 3: prerinse is carried out with original silicon chip in (1), removes affected layer, making herbs into wool, as monocrystalline substrate; (2) silicon chip carries out the single face boron diffusion back-to-back, makes the P+ layer; (3) non-expansion boron layer is carried out the single face corrosion and removes Pyrex with wet-oxygen oxidation; (4) expanding making silica masking layer on the boron layer P+; (5) adopt the method for single face diffusion back-to-back equally, carry out follow-up phosphorous diffusion, make the N+ layer; (6) remove phosphorosilicate glass after expansion phosphorus technology is accomplished; (7) plasma etching trimming knot; (8) with PECVD at silicon chip double-sided deposition silicon nitride antireflective coating; (9) silk screen printing double-sided electrode, sintering is processed the two-sided light type crystalline silicon solar cell that receives.
Yet, how back contact silicon solar cell (MWT solar cell) and the two-sided light type solar cell that receives are combined, and prevent the short circuit of silicon chip positive and negative, be one of technical staff's difficult problem that need solve.
Summary of the invention
The object of the invention provides a kind of preparation method of two-sided back contact solar cell.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of preparation method of two-sided back contact solar cell, it is characterized in that, and comprise the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) silicon chip carries out the single face diffusion back-to-back, and silicon chip back is a diffusingsurface, forms first diffusion layer at the silicon chip back side;
(3) front and back at silicon chip prepares barrier film;
(4) window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip;
(5) silicon chip that step (4) is obtained is put into alkali lye, first diffusion layer of the said subregion of erosion removal;
(6) remove the positive barrier film of silicon chip;
(7) perforate on silicon chip; The cleaning silicon chip surface;
(8) silicon chip that step (7) is obtained spreads, in the front of silicon chip, hole and the peripheral region in the hole at the silicon chip back side form second diffusion layer;
(9) etching periphery knot; Remove the barrier film at the silicon chip back side, the cleaning silicon chip surface;
(10) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(11) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
In the preceding text, subregion described in the said step (4) is the peripheral region of treating the hole of perforate on the silicon chip; Be meant the peripheral region in the hole after the silicon chip perforate, the peripheral region in hole is meant that the silicon chip back side is the zone of square, circle, triangle or arbitrary shape in the scope of 2 ~ 10mm in the center of circle with the center, hole of perforate.The silicon chip here is not perforate as yet, but the position in its hole to be opened can confirm in advance, thereby treats on its silicon chip that the peripheral region in the hole of perforate can confirm in advance.
In the technique scheme, said silicon chip is a N type silicon chip, and said first diffusion layer is a phosphorus-diffused layer, and second diffusion layer is a diffused layer of boron.Certainly, said silicon chip also can be a P type silicon chip, and first diffusion layer is a diffused layer of boron, and second diffusion layer is a phosphorus-diffused layer.
In the technique scheme, the barrier film in the said step (3) is silicon dioxide barrier film or silicon nitride barrier film, and its thickness is 40 ~ 200 nm.
In the technique scheme, in the said step (4), adopt printing corrosive slurry removal method or laser ablation method to window.
In the technique scheme, the alkali lye in the said step (5) is NaOH solution or KOH solution, and its mass concentration is 1% ~ 30%, and the temperature of corrosion is 50 ~ 90 ℃, etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm.
Corresponding with it another kind of technical scheme, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) silicon chip carries out the single face diffusion back-to-back, and silicon chip back is a diffusingsurface, forms first diffusion layer at the silicon chip back side;
(3) above-mentioned silicon chip is carried out the single face diffusion back-to-back, the front of silicon chip is a diffusingsurface, at positive second diffusion layer that forms of silicon chip;
(4) front and back at silicon chip prepares barrier film;
(5) window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip;
(6) silicon chip that step (5) is obtained is put into alkali lye, first diffusion layer of the said subregion of erosion removal;
(7) perforate on silicon chip;
(8) etching periphery knot, the barrier film of removal silicon chip front and back, cleaning silicon chip surface;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
In the technique scheme, silicon chip is a N type silicon chip, and said first diffusion layer is a phosphorus-diffused layer, and second diffusion layer is a diffused layer of boron.Certainly, said silicon chip also can be a P type silicon chip, and first diffusion layer is a diffused layer of boron, and second diffusion layer is a phosphorus-diffused layer.
In the technique scheme, said step (3) is removed the impurity glass at the silicon chip back side afterwards.
In the technique scheme, the barrier film in the said step (4) is silicon dioxide barrier film or silicon nitride barrier film, and its thickness is 40 ~ 200 nm.
In the technique scheme, the alkali lye in the said step (6) is NaOH solution or KOH solution, and its mass concentration is 1% ~ 30%, and the temperature of corrosion is 50 ~ 90 ℃, etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention has developed a kind of preparation method of two-sided back contact solar cell, and its preparation technology is simple, easy operating; Have good electrical properties by its two-sided back contact solar cell that makes, its photoelectric conversion efficiency can reach more than 19.5%.
2. the present invention has prepared barrier film at the front and back of silicon chip; Cooperate the peripheral region that employing is windowed, corroding method sets out hole, the silicon chip back side again; Removed this regional diffusing, doping layer; Make this zone not have the diffusing, doping atom identical with the silicon chip type, there is not the short circuit problem at diffusion system knot place in the two-sided back contact solar cell that finally obtains, has obtained significant effect.
Description of drawings
Fig. 1 ~ 11st, the preparation process sketch map of the embodiment of the invention one;
Figure 12 ~ 21st, the preparation process sketch map of the embodiment of the invention two.
Wherein, 1, N type silicon chip; 2, front; 3, the back side; 4, matte; 5, phosphorus-diffused layer; 6, barrier film; 7, windowed regions; 8, corrosion area; 9, hole; 10, diffused layer of boron; 11, passivated reflection reducing membrane; 12, mesoporous metal electrode; 13, front electrode; 14, backplate.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
Shown in Fig. 1 ~ 11, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) removes N type silicon chip 1 surface damage layer, and form matte 4; All form matte 4 on the front 2 of silicon chip and the back side 3, referring to shown in Figure 1;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer 5 at the silicon chip back side; Referring to shown in Figure 2;
(3) above-mentioned silicon chip is put into oxidation furnace and carry out two-sided oxidation, preparation barrier film 6,800 ~ 1000 ℃ of temperature, time 5 ~ 90min, oxygen flow 5 ~ 15slm, barrier film thickness 40 ~ 200nm; Referring to shown in Figure 3;
(4) remove oxide-film at the windowed regions 7 printing corrosivity slurries at the silicon chip back side; Referring to shown in Figure 4; Said windowed regions is treated the peripheral region in the hole of perforate for the silicon chip back side;
(5) above-mentioned silicon chip is put into NaOH solution, the phosphorus-diffused layer of erosion removal corrosion area 8, the mass concentration of NaOH solution are 1% ~ 30%, 50 ~ 90 ℃ of temperature, time 30 ~ 800s, corrosion depth 300 ~ 5000 nm; Referring to shown in Figure 5;
(6) at the positive printing of silicon chip corrosivity slurry, remove the positive barrier film of silicon chip; Referring to shown in Figure 6;
(7) punching; Form hole 9, the cleaning silicon chip surface; Referring to shown in Figure 7;
(8) above-mentioned silicon chip is put into diffusion furnace and carry out boron diffusion, the two-sided diffusingsurface that is of silicon chip, the barrier film at the silicon chip back side stops boron diffusion, carries out boron diffusion in the peripheral region in the hole at simultaneously positive at silicon chip, the silicon chip back side and the hole 9; Form diffused layer of boron 10; Referring to shown in Figure 8;
(9) periphery of etching silicon chip knot; Remove the barrier film at the silicon chip back side, the cleaning silicon chip surface; Referring to shown in Figure 9;
(10) two-sided preparation passivated reflection reducing membrane 11; Referring to shown in Figure 10;
(11) mesoporous metal electrode 12 is set in the hole; The printed on both sides metal electrode, sintering forms front electrode 13 and backplate 14, can obtain the two-sided back contact solar cell of N type, referring to shown in Figure 11.
In the preceding text, said windowed regions 7 and corrosion area 8 all are meant the peripheral region in the hole of treating perforate at the silicon chip back side.
Embodiment two
A kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) removes N type silicon chip surface affected layer, and form matte;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer at the silicon chip back side;
(3) remove phosphorosilicate glass;
(4) above-mentioned silicon chip is put into oxidation furnace and carry out two-sided oxidation, the preparation barrier film, 800 ~ 1000 ℃ of temperature, time 5 ~ 90min, oxygen flow 5 ~ 15slm feeds steam simultaneously, and its flow is 3 ~ 12slm; Barrier film thickness 40 ~ 200nm;
(5) adopt the laser ablation oxide-film in the peripheral region in the hole of treating perforate at the silicon chip back side; Optical maser wavelength is 532nm or 1064nm;
(6) above-mentioned silicon chip is put into alkali lye, the phosphorus-diffused layer of erosion removal above-mentioned zone, alkali lye can adopt NaOH solution or KOH to dissolve, and its mass concentration is 1% ~ 30%, and the temperature of corrosion is 50 ~ 90 ℃, etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm;
(7) at the positive printing of silicon chip corrosivity slurry, remove the positive barrier film of silicon chip;
(8) punching; The cleaning silicon chip surface;
(9) above-mentioned silicon chip is put into diffusion furnace and carry out boron diffusion, the two-sided diffusingsurface that is of silicon chip, the barrier film at the silicon chip back side stops boron diffusion, carries out boron diffusion in the peripheral region in the hole at simultaneously positive at silicon chip, the silicon chip back side and the hole; Form diffused layer of boron;
(10) periphery of etching silicon chip knot; Remove the barrier film at the silicon chip back side; The cleaning silicon chip surface;
(11) two-sided preparation passivated reflection reducing membrane;
(12) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain the two-sided back contact solar cell of N type.
Embodiment three
A kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) removes N type silicon chip surface affected layer, and form matte;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer at the silicon chip back side;
(3) with above-mentioned silicon chip double-sided deposition silicon nitride barrier film, barrier film thickness 40 ~ 200nm;
(4) adopt the laser ablation oxide-film in the peripheral region in the hole of treating perforate at the silicon chip back side; Optical maser wavelength is 532nm or 1064nm;
(5) above-mentioned silicon chip is put into NaOH solution, the phosphorus-diffused layer of erosion removal above-mentioned zone, the mass concentration of NaOH solution are 1% ~ 30%, and the temperature of corrosion is 50 ~ 90 ℃, etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm;
(6) at the positive printing of silicon chip corrosivity slurry, remove the positive barrier film of silicon chip;
(7) punching; The cleaning silicon chip surface;
(8) above-mentioned silicon chip is put into diffusion furnace and carry out boron diffusion, the two-sided diffusingsurface that is of silicon chip, the barrier film at the silicon chip back side stops boron diffusion, carries out boron diffusion in the peripheral region in the hole at simultaneously positive at silicon chip, the silicon chip back side and the hole; Form diffused layer of boron;
(9) periphery of etching silicon chip knot; Remove the barrier film at the silicon chip back side; The cleaning silicon chip surface;
(10) two-sided preparation passivated reflection reducing membrane;
(11) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain the two-sided back contact solar cell of N type.
Embodiment four
Shown in Figure 12 ~ 21, a kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) cleans N type silicon chip 1 surface, remove affected layer, carry out making herbs into wool, form matte 4, referring to shown in Figure 12 at the front 2 and the back side 3 of silicon chip;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer 5 at the silicon chip back side; Referring to shown in Figure 13;
(3) will expand silicon chip behind the phosphorus and put into diffusion furnace back-to-back and carry out boron diffusion, the front of silicon chip is a diffusingsurface, at the positive diffused layer of boron 10 that forms of silicon chip; Referring to shown in Figure 14;
(4) silicon chip after will spreading is put into oxidation furnace and is carried out two-sided oxidation, preparation barrier film 6,800 ~ 1000 ℃ of temperature, time 5 ~ 90min, oxygen flow 5 ~ 15slm; Barrier film thickness 40 ~ 200nm; Referring to shown in Figure 15;
(5) window at the windowed regions 7 printing corrosivity slurries of silicon chip back, remove said barrier film; Referring to shown in Figure 16;
(6) above-mentioned silicon chip is put into NaOH solution, the phosphorus-diffused layer of erosion removal corrosion area 8, the mass concentration of NaOH are 3 ~ 25%, 50 ~ 90 ℃ of temperature, time 30 ~ 800s, corrosion depth 500 ~ 5000nm; Referring to shown in Figure 17;
(7) perforate on silicon chip; Form hole 9, referring to shown in Figure 180;
(8) etching periphery knot, the barrier film of removal silicon chip front and back, cleaning silicon chip surface; Referring to shown in Figure 19;
(9) front and back at silicon chip is provided with passivated reflection reducing membrane 11; Referring to shown in Figure 20;
(10) mesoporous metal electrode 12 is set in the hole; The printed on both sides metal electrode, sintering forms front electrode 13 and backplate 14, can obtain the two-sided back contact solar cell of N type, referring to shown in Figure 21.
In the preceding text, said windowed regions 7 and corrosion area 8 all are meant the peripheral region in the hole of treating perforate at the silicon chip back side.
Embodiment five
A kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer at the silicon chip back side;
(3) will expand silicon chip behind the phosphorus and put into diffusion furnace back-to-back and carry out boron diffusion, the front of silicon chip is a diffusingsurface, at the positive diffused layer of boron that forms of silicon chip;
(4) silicon chip after will spreading is put into oxidation furnace and is carried out two-sided oxidation, the preparation barrier film, and 800 ~ 1000 ℃ of temperature, time 5 ~ 90min, oxygen flow 5 ~ 15slm feeds steam, and its flow is 3 ~ 12slm; Barrier film thickness 40 ~ 200nm;
(5) adopt laser to window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip; Optical maser wavelength is 532nm or 1064nm;
(6) above-mentioned silicon chip is put into NaOH solution, the phosphorus-diffused layer of the above-mentioned subregion of erosion removal, the mass concentration of NaOH solution are 5% ~ 20%, 70 ~ 80 ℃ of temperature, time 30 ~ 800s, corrosion depth 500 ~ 5000nm
(7) perforate on silicon chip;
(8) etching periphery knot, the barrier film of removal silicon chip front and back, cleaning silicon chip surface;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain the two-sided back contact solar cell of N type.
Embodiment six
A kind of preparation method of two-sided back contact solar cell comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) above-mentioned silicon chip is put into diffusion furnace back-to-back and carry out phosphorous diffusion, silicon chip back is a diffusingsurface, forms phosphorus-diffused layer at the silicon chip back side;
(3) will expand silicon chip behind the phosphorus and put into diffusion furnace back-to-back and carry out boron diffusion, the front of silicon chip is a diffusingsurface, at the positive diffused layer of boron that forms of silicon chip;
(4) the silicon chip double-sided deposition silicon nitride barrier film after will spreading, barrier film thickness 40 ~ 200nm;
(5) adopt laser to window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip; Optical maser wavelength is 532nm or 1064nm;
(6) above-mentioned silicon chip is put into NaOH solution, the phosphorus-diffused layer of the above-mentioned subregion of erosion removal, the mass concentration of NaOH solution are 5 ~ 20%, 70 ~ 80 ℃ of temperature, time 30 ~ 800s, corrosion depth 500 ~ 5000nm;
(7) perforate on silicon chip;
(8) etching periphery knot, the barrier film of removal silicon chip front and back, cleaning silicon chip surface;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain the two-sided back contact solar cell of N type.
Claims (10)
1. the preparation method of a two-sided back contact solar cell is characterized in that, comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) silicon chip carries out the single face diffusion back-to-back, and silicon chip back is a diffusingsurface, forms first diffusion layer at the silicon chip back side;
(3) front and back at silicon chip prepares barrier film;
(4) window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip;
(5) silicon chip that step (4) is obtained is put into alkali lye, first diffusion layer of the said subregion of erosion removal;
(6) remove the positive barrier film of silicon chip;
(7) perforate on silicon chip; The cleaning silicon chip surface;
(8) silicon chip that step (7) is obtained spreads, in the front of silicon chip, hole and the peripheral region in the hole at the silicon chip back side form second diffusion layer;
(9) etching periphery knot; Remove the barrier film at the silicon chip back side, the cleaning silicon chip surface;
(10) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(11) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
2. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: said silicon chip is a N type silicon chip, and said first diffusion layer is a phosphorus-diffused layer, and second diffusion layer is a diffused layer of boron.
3. the preparation method of two-sided back contact solar cell according to claim 1, it is characterized in that: the barrier film in the said step (3) is silicon dioxide barrier film or silicon nitride barrier film, and its thickness is 40 ~ 200 nm.
4. the preparation method of two-sided back contact solar cell according to claim 1 is characterized in that: in the said step (4), adopt printing corrosive slurry removal method or laser ablation method to window.
5. the preparation method of two-sided back contact solar cell according to claim 1; It is characterized in that: the alkali lye in the said step (5) is NaOH solution or KOH solution, and its mass concentration is 1% ~ 30%, and the temperature of corrosion is 50 ~ 90 ℃; Etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm.
6. the preparation method of a two-sided back contact solar cell is characterized in that, comprises the steps:
(1) affected layer is removed on cleaning silicon chip surface, carries out making herbs into wool at the front and back of silicon chip;
(2) silicon chip carries out the single face diffusion back-to-back, and silicon chip back is a diffusingsurface, forms first diffusion layer at the silicon chip back side;
(3) above-mentioned silicon chip is carried out the single face diffusion back-to-back, the front of silicon chip is a diffusingsurface, at positive second diffusion layer that forms of silicon chip;
(4) front and back at silicon chip prepares barrier film;
(5) window in the subregion of silicon chip back, remove said barrier film; Said subregion is the peripheral region of treating the hole of perforate on the silicon chip;
(6) silicon chip that step (5) is obtained is put into alkali lye, first diffusion layer of the said subregion of erosion removal;
(7) perforate on silicon chip;
(8) etching periphery knot, the barrier film of removal silicon chip front and back, cleaning silicon chip surface;
(9) at the front and back of silicon chip passivated reflection reducing is set and penetrates film;
(10) the mesoporous metal electrode is set in the hole; The printed on both sides metal electrode, sintering can obtain two-sided back contact solar cell.
7. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: said silicon chip is a N type silicon chip, and said first diffusion layer is a phosphorus-diffused layer, and second diffusion layer is a diffused layer of boron.
8. the preparation method of two-sided back contact solar cell according to claim 6 is characterized in that: said step (3) is removed the impurity glass at the silicon chip back side afterwards.
9. the preparation method of two-sided back contact solar cell according to claim 6, it is characterized in that: the barrier film in the said step (4) is silicon dioxide barrier film or silicon nitride barrier film, and its thickness is 40 ~ 200 nm.
10. the preparation method of two-sided back contact solar cell according to claim 6; It is characterized in that: the alkali lye in the said step (6) is NaOH solution or KOH solution; Its mass concentration is 1% ~ 30%; The temperature of corrosion is 50 ~ 90 ℃, etching time 30 ~ 800s, corrosion depth 300 ~ 5000 nm.
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| CN102403406A (en) * | 2011-11-22 | 2012-04-04 | 苏州阿特斯阳光电力科技有限公司 | Preparation method for back contact type silicon solar cell |
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| US20100252903A1 (en) * | 2007-11-12 | 2010-10-07 | Tsutomu Yamazaki | Photoelectric transducer and manufacturing method therefor |
| WO2011105907A1 (en) * | 2010-02-26 | 2011-09-01 | Stichting Energieonderzoek Centrum Nederland | Method of fabrication of a back-contacted photovoltaic cell, and back-contacted photovoltaic cell made by such a method |
| CN201699033U (en) * | 2010-03-30 | 2011-01-05 | 杨乐 | Two-sided illuminated crystalline silicon solar battery |
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Application publication date: 20120919 |