CN102683433B - With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating - Google Patents
With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating Download PDFInfo
- Publication number
- CN102683433B CN102683433B CN201110054872.2A CN201110054872A CN102683433B CN 102683433 B CN102683433 B CN 102683433B CN 201110054872 A CN201110054872 A CN 201110054872A CN 102683433 B CN102683433 B CN 102683433B
- Authority
- CN
- China
- Prior art keywords
- antireflective coating
- oxide layer
- conductive oxide
- glass
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating and preparation method thereof.The present invention is sandwiched metal level (3) between metal conductive oxide layer (2) and the second metal conductive oxide layer (4), first antireflective coating (7), metal conductive oxide layer (2), metal level (3) and the second metal conductive oxide layer (4) are located at glass baseplate (1) side on the surface successively, and the second antireflective coating (8) is arranged on the opposite side of glass baseplate (1) on the surface.Prepare metal conductive oxide layer by methods such as LPCVD or PECVD on the glass substrate, prepare metal level with magnetron sputtering or thermal evaporation method, prepare the second metal conductive oxide layer with chemical gaseous phase depositing process, prepare antireflective coating with sol-gel method.Light transmission of the present invention is good, and conductivity is strong, and nephelometric turbidity unit is high, film layer structure good stability; Cost performance is high; Preparation cost is low.
Description
Technical field
The present invention relates to a kind of novel high-performance electro-conductive glass, particularly a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating and preparation method thereof, belongs to photoelectricity field of new, is particularly useful for solar energy materials field.
Background technology
Along with the utilization of the novel energy solar energy to environment protecting and power-saving, the development of novel solar battery more and more becomes the important topic in Application of Solar Energy field.Thin-film solar cell applications in current solar cell is very extensive, quality as the electro-conductive glass of thin-film solar cells important component part is directly connected to the quality of thin-film solar cells quality, is therefore very important to the reformed AHP of thin-film solar cells electro-conductive glass always.The nesa coating that existing thin-film solar cells electro-conductive glass generally comprises glass baseplate and arranges on the glass substrate, also include antireflective coating, nesa coating is made up of metal conductive oxide layer.Conventional preparation method is adopted time prepared by thin-film solar cells electro-conductive glass, as adopted the methods such as low-pressure chemical vapor deposition (being called for short LPCVD), PCVD (being called for short PECVD), magnetron sputtering (being called for short SPUTTER) or thermal spraying (being called for short SPRAY) to prepare metal conductive oxide layer, the methods such as chemical corrosion method, magnetron sputtering or collosol and gel are adopted to prepare antireflective coating.Existing thin-film solar cells electro-conductive glass glass baseplate wherein generally adopts common float glass process white glass or ultra-white float glass.Nesa coating wherein possesses good electric conductivity, there is very high transmitance to visible ray simultaneously, nesa coating is widely used in electronic industry as a kind of functional material, such as flat panel display, solar cell, touch-screen, instrument and the industrial circle such as instrument display, optical coating and building energy conservation glass.Especially in field of solar energy, as electrode before thin-film solar cells, vital effect is played to the conversion efficiency of thin-film solar cells.Because nesa coating has important effect, therefore according to the material difference that nesa coating adopts, electro-conductive glass is mainly divided into three kinds: the first is ito glass, for indium tin metal oxide, transmitance is high, and conductivity is excellent, but there is the expensive of raw material indium, be mainly used in the industrial circle such as liquid crystal display, touch-screen, seldom apply in field of thin film solar cells; The second is FTO glass, and be the tin ash of Fluorin doped, have advantage of lower cost, laser ablation is easier to, and optical property such as to be suitable at the feature, is mainly used in field of thin film solar cells; The third is AZO glass, be aluminium doping zinc oxide, optical property and conductance good, raw material is easy to get, cheap for manufacturing cost, nontoxic, be easy to realize doping, but when being applied to thin film solar battery module, there is the defect that can be limited by process for etching and interface problem.There is reflex on two surfaces of existing thin-film solar cells electro-conductive glass for light, the light transmittance of sunlight is made generally to be no more than 91.5%, cause this sunlight of about 8.5% to be utilized not yet, this sunlight of about 8.5% is also the very huge energy.Therefore people are in order to improve light transmittance etc. constantly on affecting electro-conductive glass light transmission, the nesa coating film layer structure of conductivity and nephelometric turbidity unit carries out improving and increasing antireflective coating, the performance arranged improving electro-conductive glass that anti-reflection layer penetrates layer has certain effect, increase the number of plies of metal conductive oxide layer, change layer of metal oxide conducting layer into multilayer, but be still physics superposition between multiple layer metal oxide conducting layer, nesa coating film layer structure is single, poor stability, these nesa coating film layer structures improved inherently do not change the performance of electro-conductive glass, the light transmission of electro-conductive glass, conductivity and nephelometric turbidity unit do not obtain too large raising.Cause very huge solar energy still cannot to be fully used and to transform, this causes the reduction of solar conversion efficiency, and use cost increases.Therefore a kind of light transmission of electro-conductive glass, conductivity and nephelometric turbidity unit is badly in need of better, the stability of nesa coating film layer structure is better, inherently can change the novel thin film solar cell electro-conductive glass of the film layer structure of nesa coating, but this is an insurmountable technical barrier always.
Summary of the invention
The object of the invention is for the deficiencies in the prior art, one is provided to have good electric conductivity, nephelometric turbidity unit and visible light transmissivity and nesa coating membranous layer stability, and high thin-film solar cells electro-conductive glass with two-sided antireflective coating of cost performance and preparation method thereof.
The technical scheme realizing above-mentioned purpose is: a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, include glass baseplate and nesa coating, also include antireflective coating, nesa coating includes metal conductive oxide layer and the second metal conductive oxide layer, metal level is gripped with between metal conductive oxide layer and the second metal conductive oxide layer, first antireflective coating, metal conductive oxide layer, metal level and the second metal conductive oxide layer are successively set on the side of glass baseplate on the surface, second antireflective coating is arranged on the opposite side of glass baseplate on the surface.
Further, described glass baseplate is common float glass process white glass or ultra-white float glass.
Further, described metal conductive oxide layer thickness is 100 ~ 500nm, metal layer thickness is 10 ~ 100nm, second metal conductive oxide layer thickness is 100 ~ 500nm, the thicknesses of layers of the first antireflective coating is 65 ~ 200nm, the refractive index value of the first antireflective coating is the thicknesses of layers of the 1.55 ~ 1.8, second antireflective coating is 65 ~ 200nm, and the refractive index value of the second antireflective coating is 1.22 ~ 1.4.
Further, described metal conductive oxide layer is AZO, GZO, ZnO, SnO
2or any one in ITO.
Further, described metal level is any one in Ag films, aluminium film, molybdenum film, or is the alloy firm of the two composition arbitrarily in silver-colored aluminium molybdenum.
Further, the second described metal conductive oxide layer is AZO, SnO
2: any one in F or ITO.
A kind of preparation method of the thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is: prepare metal conductive oxide layer by the method for low-pressure chemical vapor deposition, PCVD, magnetron sputtering or thermal spraying on the glass substrate, metal level is prepared with the physical gas-phase deposite method of magnetron sputtering or thermal evaporation, prepare the second metal conductive oxide layer with chemical gaseous phase depositing process, prepare the first antireflective coating and the second antireflective coating with sol-gel method.
Further, described prepares metal conductive oxide layer by the method for magnetron sputtering on the glass substrate, metal level is prepared with the physical gas-phase deposite method of magnetron sputtering, the second metal conductive oxide layer is prepared with the chemical gaseous phase depositing process of normal pressure, prepare the first antireflective coating and the second antireflective coating with sol-gel method, concrete operation step is as follows:
The first step, prepares the first antireflective coating and the second antireflective coating by glass baseplate with sol-gel method;
Second step, is installed in the sputtering chamber of magnetron sputtering production line by metal oxide target and metal targets;
3rd step, vacuumizes sputtering chamber, is then filled with argon gas, the pressure of adjustment sputtering chamber;
4th step, opens front end and heats trip temperature setting of going forward side by side; Open target direct current radio-frequency power supply, metallic conduction oxide target material sputtering power and metal targets target as sputter power are set;
5th step, cleaned glass baseplate is placed into section on magnetron sputtering production line, stream is pulled to the thermal treatment zone, front end, metal oxide target sputtering chamber and metal targets sputtering chamber successively, sputtering sedimentation is carried out on the basis that glow discharge is stable, is regulated by power adjustments and argon flow amount and reach the thickness requirement of metal conductive oxide layer and the thickness requirement of metal level;
6th step, the glass baseplate being coated with metal conductive oxide layer and metal level obtained in the previous step is placed in chemical vapour deposition (CVD) production line and is coated with the second metal conductive oxide layer, by the heating-up temperature of regulable control glass baseplate, raw material gas flow, glass baseplate translational speed and carrier gas flux, reach the thickness requirement of the second metal conductive oxide layer, prepare the thin-film solar cells electro-conductive glass with two-sided antireflective coating.
Further, in described step:
The first step, prepares antireflective coating and the second antireflective coating by glass baseplate by the sol-gel method preparing an inorganic organic impurities SiClx colloidal sol, film, hydrophobic treatment and solidification treatment step;
Second step, the spacing of target and glass baseplate is adjusted to 20 ~ 60mm;
3rd step, is evacuated to 10 to sputtering chamber
-3pa, is namely evacuated to 10
-3the pa order of magnitude; The pressure of adjustment sputtering chamber is 0.8 ~ 3pa;
4th step, temperature is set to 100 ~ 200 DEG C; Metallic conduction oxide target material sputtering power is set to 200 ~ 300W, and metal targets sputtering power is set to 100 ~ 200W;
5th step, metal conductive oxide layer thickness is deposited as 100 ~ 500nm, and metal layer thickness is deposited as 10 ~ 100nm;
6th step, the heating-up temperature of regulable control glass baseplate is 300 ~ 600 DEG C, and glass baseplate translational speed controls at 1 ~ 2m/min, and carrier gas flux controls at 10 ~ 90L/min, and the second metal conductive oxide layer thickness is deposited as 100 ~ 500nm.In this step, the heating-up temperature of glass baseplate is 300 ~ 600 DEG C, and object is that the while of improving visible light transmissivity and reduce sheet resistance, glass baseplate deformation does not occur at this temperature.The performance parameters of parameter on electro-conductive glass of the present invention such as described gas flow and stream pulling rate degree have very important impact, and by regulating and controlling parameters, to ensure that the blended metal oxide conducting films such as the fluorine of deposition are evenly distributed, arrangement is fine and close.
Adopt technical scheme of the present invention, have the following advantages: (1) has good electric conductivity, nephelometric turbidity unit and visible light transmissivity and nesa coating membranous layer stability, and anti-reflective effect is good.Conducting film rete single structure when the present invention changes existing, the present invention is gripped with metal level between metal conductive oxide layer and the second metal conductive oxide layer, first antireflective coating, metal conductive oxide layer, metal level and the second metal conductive oxide layer deposit successively be arranged on glass baseplate side on the surface, the second antireflective coating is arranged on the surface of glass baseplate opposite side.The present invention first antireflective coating and the second antireflective coating are first deposited on the surface of glass baseplate both sides, on the first antireflective coating, deposition arranges metal conductive oxide layer again, then metal level deposition is arranged on metal conductive oxide layer, metal level and the second metal conductive oxide layer deposit setting on the metal layer again, the increase of metal level makes to there occurs chemical reaction between metal level and the second metal conductive oxide layer and forms polymer, produces ball structure.The film layer structure of nesa coating of the present invention there occurs the change of essence, is different from the simple physical superposition of nesa coating film layer structure in prior art completely.The present invention is by the innovation to nesa coating film layer structure, achieve the optimum organization of multilayer complex films, substantially increase the performance of nesa coating, make the light transmission of thin-film solar cells electro-conductive glass better, conductivity is stronger, nephelometric turbidity unit is higher, nesa coating film layer structure dense uniform, stability is very good, and wherein sheet resistance can be controlled within the scope of 5.9 Ω/ ~ 28.5 Ω/, visible light transmissivity reaches more than 75%, and nephelometric turbidity unit can promote more than 5%; And the present invention is with two-sided antireflective coating, make membrane structure of the present invention very abundant, make anti-reflection effect of the present invention very good; (2) cost performance is high, and use cost is low.The present invention compensate for the unification of the deficiencies in the prior art and nesa coating film layer structure, enrich nesa coating film layer structure, design very ingenious, the simple structure of the present invention solves this insoluble technical problem always, because performance of the present invention improves greatly, the photoelectric conversion efficiency that the present invention is applied in thin-film solar cells is very high, makes huge solar energy be fully used and transform, loss is little, and use cost reduces greatly; (3) the inventive method technique preparing electro-conductive glass of the present invention is simple, and easily realize, preparation cost is low.
Accompanying drawing explanation
Accompanying drawing is structural representation of the present invention.
Embodiment
Below by embodiment, the present invention is further detailed explanation.
Embodiment one
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, includes glass baseplate 1 and nesa coating 5, also includes antireflective coating 6.Nesa coating 5 includes metal conductive oxide layer 2 and the second metal conductive oxide layer 4.Antireflective coating 6 is made up of the first antireflective coating 7 and the second antireflective coating 8.Metal level 3 is gripped with between metal conductive oxide layer 2 and the second metal conductive oxide layer 4, first antireflective coating 7, metal conductive oxide layer 2, metal level 3 and the second metal conductive oxide layer 4 deposit successively and are arranged on the side of glass baseplate 1 on the surface, and the second antireflective coating 8 is arranged on the opposite side of glass baseplate 1 on the surface.Described glass baseplate 1 is the common float glass process white glass of thickness 3.2mm.Described metal conductive oxide layer 2 thickness is 250nm, metal level 3 thickness is 50nm, second metal conductive oxide layer 4 thickness is 250nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 100nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is AZO, and metal level 3 is Ag films, and the second metal conductive oxide layer 4 is SnO
2: F.
A kind of preparation method realizing the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is: on glass baseplate 1, prepare metal conductive oxide layer 2 by the method for magnetron sputtering, metal level 3 is prepared with the physical gas-phase deposite method of magnetron sputtering, the second metal conductive oxide layer 4 is prepared with the chemical gaseous phase depositing process of normal pressure, prepare antireflective coating 6 with sol-gel method, concrete operation step is as follows:
The first step, prepares antireflective coating 7 and the second antireflective coating 8 by glass baseplate 1 by the sol-gel method preparing the contaminated Ludox of inorganic-organic, film, hydrophobic treatment and solidification treatment step;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide AZO target and highly purified argent target, the spacing of target and glass baseplate 1 is adjusted to 40mm;
3rd step, vacuumizes sputtering chamber, first with mechanical pump, the base vacuum of sputtering chamber is evacuated to about 0pa when vacuumizing, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 3 × 10
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 1.2pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 130 DEG C; Open target direct current radio-frequency power supply, arrange metallic conduction oxide AZO target as sputter power and argent target target as sputter power, the power setting of metallic conduction oxide AZO target as sputter is 250W, and argent target sputtering power is set to 120W;
5th step, the glass baseplate 1 cleaned with pure water is placed into section on magnetron sputtering production line, stream is pulled to the thermal treatment zone, front end, metal oxide target sputtering chamber and metal targets sputtering chamber successively, sputtering sedimentation is carried out on the basis that glow discharge is stable, regulated by power adjustments and argon flow amount and reach the thickness requirement of metal conductive oxide layer 2 and the thickness requirement of metal level 3, metal conductive oxide layer 2 thickness is deposited as 250nm, and metal level 3 thickness is deposited as 50nm;
6th step, the glass baseplate 1 being coated with metal conductive oxide layer 2 and metal level 3 obtained in the previous step is placed in chemical vapour deposition (CVD) production line and is coated with the second metal conductive oxide layer 4, by the heating-up temperature of regulable control glass baseplate, raw material gas flow, glass baseplate translational speed and carrier gas flux, reach the thickness requirement of the second metal conductive oxide layer, thus prepare the thin-film solar cells electro-conductive glass with two-sided antireflective coating.Wherein the heating-up temperature of regulable control glass baseplate 1 is 580 DEG C, stanniferous gas SnCl
4gas flow is 40L/min, and fluoro-gas HF flow is 10L/min, and glass baseplate 1 translational speed controls at 1m/min, and carrier gas flux controls at 80L/min, and the second metal conductive oxide layer 4 thickness is deposited as 250nm, and integral membrane layer thickness is 550nm.In the present embodiment, the unstrpped gas of aumospheric pressure cvd is except adopting HF and SnCl
4outward, also TFA and MBTC can be adopted.
The thin-film solar cells electro-conductive glass performance with two-sided antireflective coating that the present embodiment obtains is good, and its sheet resistance is 8.8 Ω/, and visible light wave range mean transmissivity reaches 76%.
Embodiment two
As shown in drawings, with a thin-film solar cells electro-conductive glass for two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure, and described metal conductive oxide layer 2 is AZO, metal level 3 is Ag films, and the second metal conductive oxide layer 4 is SnO
2: F.With embodiment one unlike: described glass baseplate 1 is the ultra-white float glass of thickness 3.2mm; Described metal conductive oxide layer 2 thickness is 150nm, metal level 3 thickness is 30nm, second metal conductive oxide layer 4 thickness is 250nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 80nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, the spacing of target and glass baseplate 1 is adjusted to 50mm, and all the other are identical with embodiment one;
3rd step, the balanced gas pressure of adjustment sputtering chamber is 0.8pa, and all the other are identical with embodiment one;
4th step, the power setting of metallic conduction oxide AZO target as sputter is 200W, and argent target sputtering power is set to 80W, and all the other are identical with embodiment one;
5th step, is deposited as 150nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 30nm, and all the other are identical with embodiment one;
6th step, wherein stanniferous gas SnCl
4gas flow is 30L/min, and the second metal conductive oxide layer 4 thickness is deposited as 250nm, and integral membrane layer thickness is 430nm, and all the other are identical with embodiment one.In the present embodiment, the unstrpped gas of aumospheric pressure cvd is except adopting HF and SnCl
4outward, also TFA and MBTC can be adopted.
The thin-film solar cells electro-conductive glass performance with two-sided antireflective coating that the present embodiment obtains is good, and its sheet resistance is 12 Ω/, and visible light wave range mean transmissivity reaches 76%.
Embodiment three
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure, and described metal level 3 is Ag films, and the second metal conductive oxide layer 4 is SnO
2: F.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 200nm, metal level 3 thickness is 50nm, second metal conductive oxide layer 4 thickness is 300nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 120nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is GZO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide GZO target and highly purified argent target, all the other are identical with embodiment one;
3rd step is identical with embodiment one;
4th step, the power setting of metallic conduction oxide GZO target as sputter is 250W, and argent target sputtering power is set to 120W, and all the other are identical with embodiment one;
5th step, is deposited as 200nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 50nm, and all the other are identical with embodiment one;
6th step, wherein the second metal conductive oxide layer 4 thickness is deposited as 300nm, integral membrane layer thickness is 550nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.In the present embodiment, the unstrpped gas of aumospheric pressure cvd is except adopting HF and SnCl
4outward, also TFA and MBTC can be adopted.
The thin-film solar cells electro-conductive glass performance with two-sided antireflective coating that the present embodiment obtains is good, and its sheet resistance is 9.4 Ω/, and visible light wave range mean transmissivity reaches 76%.
Embodiment four
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure, and the second described metal conductive oxide layer 4 is SnO
2: F.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 150nm, metal level 3 thickness is 50nm, second metal conductive oxide layer 4 thickness is 280nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 70nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is GZO, and metal level 3 is aluminium film.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide GZO target and highly purified metallic aluminium target, all the other are identical with embodiment one;
3rd step is identical with embodiment one;
4th step, the power setting of metallic conduction oxide GZO target as sputter is 250W, and the power setting of metallic aluminium target as sputter is 130W, and all the other are identical with embodiment one;
5th step, is deposited as 150nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 50nm, and all the other are identical with embodiment one;
6th step, wherein the second metal conductive oxide layer 4 thickness is deposited as 280nm, integral membrane layer thickness is 480nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.In the present embodiment, the unstrpped gas of aumospheric pressure cvd is except adopting HF and SnCl
4outward, also TFA and MBTC can be adopted.
The thin-film solar cells electro-conductive glass performance with two-sided antireflective coating that the present embodiment obtains is good, and its sheet resistance is 11 Ω/, and visible light wave range mean transmissivity reaches 76%.
Embodiment five
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure.With embodiment one unlike: described glass baseplate 1 is the ultra-white float glass of thickness 3.2mm; Described metal conductive oxide layer 2 thickness is 100nm, metal level 3 thickness is 10nm, second metal conductive oxide layer 4 thickness is 230nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 65nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is ZnO, and metal level 3 is molybdenum film, and the second metal conductive oxide layer 4 is AZO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide ZnO target and highly purified metal molybdenum target, the spacing of target and glass baseplate 1 is adjusted to 20mm;
3rd step, vacuumizes sputtering chamber, is first evacuated near 0pa by the base vacuum of mechanical pump by sputtering chamber, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 5 × 10 when vacuumizing
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 2.5pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 150 DEG C; Open target direct current radio-frequency power supply, arrange metallic conduction oxide ZnO target as sputter power and metal molybdenum target target as sputter power, the power setting of metallic conduction oxide ZnO target as sputter is 300W, and the power setting of metal molybdenum target as sputter is 200W;
5th step, is deposited as 100nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 10nm, and all the other are identical with embodiment one;
6th step, wherein the heating-up temperature of regulable control glass baseplate 1 is 400 DEG C, adopting containing zinc gas diethyl zinc gas flow is 5L/min, be 1.2L/min containing aluminium gas trimethyl aluminium flow, glass baseplate 1 translational speed controls at 1.5m/min, and carrier gas flux controls at 60L/min, second metal conductive oxide layer 4 thickness is deposited as 230nm, integral membrane layer thickness is 340nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.
Embodiment six
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 400nm, metal level 3 thickness is 80nm, second metal conductive oxide layer 4 thickness is 500nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 150nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is SnO
2.Described metal level 3 is aerdentalloy film, and the second metal conductive oxide layer 4 is AZO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, by highly purified metal oxide SnO
2target and highly purified argent aluminium alloy target are installed in the sputtering chamber of magnetron sputtering production line, and the spacing of target and glass baseplate 1 is adjusted to 60mm;
3rd step, vacuumizes sputtering chamber, is first evacuated near 0pa by the base vacuum of mechanical pump by sputtering chamber, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 4 × 10 when vacuumizing
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 2.5pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 200 DEG C; Open target direct current radio-frequency power supply, metallic conduction oxide S nO is set
2target as sputter power and argent aluminium alloy target target as sputter power, metallic conduction oxide S nO
2target as sputter power setting is 280W, and the power setting of argent aluminium alloy target as sputter is 150W;
5th step, is deposited as 400m by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 80nm, and all the other are identical with embodiment one;
6th step, wherein the heating-up temperature of regulable control glass baseplate 1 is 300 DEG C, adopting containing zinc gas diethyl zinc gas flow is 5L/min, be 1.2L/min containing aluminium gas trimethyl aluminium flow, glass baseplate 1 translational speed controls at 2m/min, and carrier gas flux controls at 90L/min, second metal conductive oxide layer 4 thickness is deposited as 500nm, integral membrane layer thickness is 980nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.
Embodiment seven
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 500nm, metal level 3 thickness is 100nm, second metal conductive oxide layer 4 thickness is 450nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 180nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is ITO, and metal level 3 is silver-molybdenbum film, and the second metal conductive oxide layer 4 is ITO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide ITO target and highly purified argent molybdenum alloy target, the spacing of target and glass baseplate 1 is adjusted to 60mm;
3rd step, vacuumizes sputtering chamber, is first evacuated near 0pa by the base vacuum of mechanical pump by sputtering chamber, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 5 × 10 when vacuumizing
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 2.5pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 180 DEG C; Open target direct current radio-frequency power supply, metallic conduction oxide ITO target sputtering power and argent molybdenum alloy target target as sputter power are set, metallic conduction oxide ITO target sputtering power is set to 250W, and argent molybdenum alloy target sputtering power is set to 200W;
5th step, is deposited as 500nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 100nm, and all the other are identical with embodiment one;
6th step, wherein the heating-up temperature of regulable control glass baseplate 1 is 400 DEG C, adopting containing indium gas Indium Tris acetylacetonate gas flow is 15L/min, stanniferous gas tetramethyl tin gas flow is 10L/min, and glass baseplate 1 translational speed controls at 1m/min, and carrier gas flux controls at 85L/min, second metal conductive oxide layer 4 thickness is deposited as 450nm, integral membrane layer thickness is 1050nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.
Embodiment eight
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure.With embodiment one unlike: be the ultra-white float glass of thickness 3.2mm unlike described glass baseplate 1 with embodiment one; Described metal conductive oxide layer 2 thickness is 120nm, metal level 3 thickness is 20nm, second metal conductive oxide layer 4 thickness is 200nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 90nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is ITO, and metal level 3 is aluminium molybdenum alloys film, and the second metal conductive oxide layer 4 is SnO
2: F.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide ITO target and highly purified metallic aluminium molybdenum alloy target, the spacing of target and glass baseplate 1 is adjusted to 30mm;
3rd step, vacuumizes sputtering chamber, is first evacuated near 0pa by the base vacuum of mechanical pump by sputtering chamber, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 3 × 10 when vacuumizing
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 1.0pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 120 DEG C; Open target direct current radio-frequency power supply, metallic conduction oxide ITO target sputtering power and metallic aluminium molybdenum alloy target target as sputter power are set, metallic conduction oxide ITO target sputtering power is set to 220W, and metallic aluminium molybdenum alloy target sputtering power is set to 120W;
5th step, is deposited as 120nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 20nm, and all the other are identical with embodiment one;
6th step, the heating-up temperature of regulable control glass baseplate 1 is 400 DEG C, stanniferous gas SnCl
4gas flow is 10L/min, and fluoro-gas HF flow is 5L/min, and glass baseplate 1 translational speed controls at 1m/min, and carrier gas flux controls at 10L/min, and the second metal conductive oxide layer 4 thickness is deposited as 200nm, and integral membrane layer thickness is 340nm.
Embodiment nine
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure, and described metal conductive oxide layer 2 is AZO, and metal level 3 is Ag films.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 300nm, metal level 3 thickness is 60nm, second metal conductive oxide layer 4 thickness is 100nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 130nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.The second described metal conductive oxide layer 4 is AZO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step is identical with embodiment one;
3rd step is identical with embodiment one;
4th step is identical with embodiment one;
5th step, is deposited as 300nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 60nm, and all the other are identical with embodiment one;
6th step, wherein the heating-up temperature of regulable control glass baseplate 1 is 400 DEG C, adopting containing zinc gas diethyl zinc gas flow is 5L/min, be 1.2L/min containing aluminium gas trimethyl aluminium flow, glass baseplate 1 translational speed controls at 1.5m/min, and carrier gas flux controls at 60L/min, and the second metal conductive oxide layer 4 thickness is deposited as 100nm, integral membrane layer thickness is 460nm, and all the other are identical with embodiment one.
Embodiment ten
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass is substantially identical with embodiment one structure.With embodiment one unlike: described metal conductive oxide layer 2 thickness is 480nm, metal level 3 thickness is 90nm, second metal conductive oxide layer 4 thickness is 480nm, the thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 is 200nm, the refractive index value of the first antireflective coating 7 is the refractive index value of the 1.55 ~ 1.8, second antireflective coating 8 is 1.22 ~ 1.4.Described metal conductive oxide layer 2 is AZO, and metal level 3 is aluminium film, and the second metal conductive oxide layer 4 is ITO.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with preparation method in embodiment one.Unlike:
The first step is identical with embodiment one;
Second step, be installed in the sputtering chamber of magnetron sputtering production line by highly purified metal oxide AZO target and highly purified metallic aluminium target, the spacing of target and glass baseplate 1 is adjusted to 50mm;
3rd step, vacuumizes sputtering chamber, is first evacuated near 0pa by the base vacuum of mechanical pump by sputtering chamber, then with lobe pump and molecular pump, the vacuum of sputtering chamber is evacuated to 6 × 10 when vacuumizing
-3pa; Then be filled with high-purity argon gas, the balanced gas pressure of adjustment sputtering chamber is 2.8pa;
4th step, open front end and heat trip temperature setting of going forward side by side, temperature is set to 180 DEG C; Open target direct current radio-frequency power supply, arrange metallic conduction oxide AZO target as sputter power and metallic aluminium target target as sputter power, the power setting of metallic conduction oxide AZO target as sputter is 220W, and the power setting of metallic aluminium target as sputter is 200W;
5th step, is deposited as 480nm by metal conductive oxide layer 2 thickness, and metal level 3 thickness is deposited as 90nm, and all the other are identical with embodiment one;
6th step, wherein the heating-up temperature of regulable control glass baseplate 1 is 400 DEG C, adopting containing indium gas Indium Tris acetylacetonate gas flow is 15L/min, stanniferous gas tetramethyl tin gas flow is 10L/min, and glass baseplate 1 translational speed controls at 1m/min, and carrier gas flux controls at 70L/min, second metal conductive oxide layer 4 thickness is deposited as 480nm, integral membrane layer thickness is 1050nm, and make integral membrane layer thickness < 1100nm, all the other are identical with embodiment one.
Embodiment 11
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass structure is identical with embodiment one.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with embodiment one preparation method.Unlike: on glass baseplate 1, prepare metal conductive oxide layer 2 by the method for low-pressure chemical vapor deposition, prepare metal level 3 with the physical gas-phase deposite method of thermal evaporation.
Embodiment 12
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass structure is identical with embodiment one.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with embodiment one preparation method.Unlike: on glass baseplate 1, prepare metal conductive oxide layer 2 by plasma chemical vapor deposition process, prepare metal level 3 with the physical gas-phase deposite method of thermal evaporation.
Embodiment 13
As shown in drawings, a kind of thin-film solar cells electro-conductive glass with two-sided antireflective coating, this embodiment electro-conductive glass structure is identical with embodiment one.
Realize a preparation method for the above-mentioned thin-film solar cells electro-conductive glass with two-sided antireflective coating, described preparation method is substantially identical with embodiment one preparation method.Unlike: on glass baseplate 1, prepare metal conductive oxide layer 2 by the method for thermal spraying.
In addition to the implementation, parameters can adjust according to specific requirement in the present invention, chooses in each regulation parameter area.The thicknesses of layers of the first antireflective coating 7 and the second antireflective coating 8 can be the same or different, and the first antireflective coating and the second antireflective coating all can select SiO
2.Embodiments of the invention two to embodiment ten is prepared metal conductive oxide layer 2 except by the method for magnetron sputtering except selecting on glass baseplate 1, and any one method in LPCVD, PECVD or SPRAY can also be adopted to prepare metal conductive oxide layer 2.The unstrpped gas of aumospheric pressure cvd is except adopting HF and SnCl
4outward, the unstrpped gas of aumospheric pressure cvd also can adopt TFA and MBTC.Carrier gas described in various embodiments of the present invention is nitrogen and compressed-air actuated mist.
Embodiments of the invention are a lot, cannot be exhaustive, and the technical scheme that all employings are equal to replacement or equivalence replacement formation all belongs to the claimed scope of invention.
Claims (9)
1. the thin-film solar cells electro-conductive glass with two-sided antireflective coating, include glass baseplate (1) and nesa coating (5), also include antireflective coating (6), nesa coating (5) includes metal conductive oxide layer (2) and the second metal conductive oxide layer (4), it is characterized in that: between metal conductive oxide layer (2) and the second metal conductive oxide layer (4), be gripped with metal level (3), first antireflective coating (7), metal conductive oxide layer (2), metal level (3) and the second metal conductive oxide layer (4) are successively set on the side of glass baseplate (1) on the surface, second antireflective coating (8) is arranged on the opposite side of glass baseplate (1) on the surface, wherein prepare the second metal conductive oxide layer (4) with chemical gaseous phase depositing process, the heating-up temperature of regulable control glass baseplate (1) is 300 ~ 600 DEG C, glass baseplate (1) translational speed controls at 1 ~ 2m/min, carrier gas flux controls at 10 ~ 90L/min, second metal conductive oxide layer (4) thickness is deposited as 100 ~ 500nm.
2. according to claim 1 with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: described glass baseplate (1) is common float glass process white glass or ultra-white float glass.
3. according to ` claim 1 with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: described metal conductive oxide layer (2) thickness is 100 ~ 500nm, metal level (3) thickness is 10 ~ 100nm, second metal conductive oxide layer (4) thickness is 100 ~ 500nm, the thicknesses of layers of the first antireflective coating (7) is 65 ~ 200nm, the refractive index value of the first antireflective coating (7) is 1.55 ~ 1.8, the thicknesses of layers of the second antireflective coating (8) is 65 ~ 200nm, the refractive index value of the second antireflective coating (8) is 1.22 ~ 1.4.
4. according to claim 1 with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: described metal conductive oxide layer (2) is AZO, GZO, ZnO, SnO
2or any one in ITO.
5. according to claim 1 with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: described metal level (3) is Ag films, any one in aluminium film, molybdenum film, or is alloy firm of the two composition arbitrarily in silver-colored aluminium molybdenum.
6. according to claim 1 with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: the second described metal conductive oxide layer (4) is AZO, SnO
2: any one in F or ITO.
7. the preparation method with the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that described preparation method is: pass through low-pressure chemical vapor deposition on the glass substrate, PCVD, the method of magnetron sputtering or thermal spraying prepares metal conductive oxide layer, metal level is prepared with the physical gas-phase deposite method of magnetron sputtering or thermal evaporation, the second metal conductive oxide layer is prepared with chemical gaseous phase depositing process, the first antireflective coating and the second antireflective coating is prepared with sol-gel method, when wherein preparing the second metal conductive oxide layer with chemical gaseous phase depositing process, the heating-up temperature of regulable control glass baseplate is 300 ~ 600 DEG C, glass baseplate translational speed controls at 1 ~ 2m/min, carrier gas flux controls at 10 ~ 90L/min, second metal conductive oxide layer thickness is deposited as 100 ~ 500nm.
8. according to claim 7 with the preparation method of the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: described prepares metal conductive oxide layer by the method for magnetron sputtering on the glass substrate, metal level is prepared with the physical gas-phase deposite method of magnetron sputtering, the second metal conductive oxide layer is prepared with the chemical gaseous phase depositing process of normal pressure, prepare the first antireflective coating and the second antireflective coating with sol-gel method, concrete operation step is as follows:
The first step, prepares the first antireflective coating and the second antireflective coating by glass baseplate with sol-gel method;
Second step, is installed in the sputtering chamber of magnetron sputtering production line by metallic conduction oxide target material and metal targets;
3rd step, vacuumizes sputtering chamber, is then filled with argon gas, the pressure of adjustment sputtering chamber;
4th step, opens front end and heats trip temperature setting of going forward side by side; Open target direct current radio-frequency power supply, metallic conduction oxide target material sputtering power and metal targets sputtering power are set;
5th step, cleaned glass baseplate is placed into section on magnetron sputtering production line, stream is pulled to the thermal treatment zone, front end, metallic conduction oxide target material sputtering chamber and metal targets sputtering chamber successively, sputtering sedimentation is carried out on the basis that glow discharge is stable, is regulated by power adjustments and argon flow amount and reach the thickness requirement of metal conductive oxide layer and the thickness requirement of metal level;
6th step, the glass baseplate being coated with metal conductive oxide layer and metal level obtained in the previous step is placed in chemical vapour deposition (CVD) production line and is coated with the second metal conductive oxide layer, by the heating-up temperature of regulable control glass baseplate, raw material gas flow, glass baseplate translational speed and carrier gas flux, reach the thickness requirement of the second metal conductive oxide layer, prepare the thin-film solar cells electro-conductive glass with two-sided antireflective coating.
9., according to claim 8 with the preparation method of the thin-film solar cells electro-conductive glass of two-sided antireflective coating, it is characterized in that: in described step:
The first step, prepares the first antireflective coating and the second antireflective coating by glass baseplate by the sol-gel method preparing inorganic-organic impurities SiClx colloidal sol, film, hydrophobic treatment and solidification treatment step;
Second step, the spacing of target and glass baseplate is adjusted to 20 ~ 60mm;
3rd step, is evacuated to 10 to sputtering chamber
-3pa; The pressure of adjustment sputtering chamber is 0.8 ~ 3pa;
4th step, temperature is set to 100 ~ 200 DEG C; Metallic conduction oxide target material sputtering power is set to 200 ~ 300W, and metal targets sputtering power is set to 100 ~ 200W;
5th step, metal conductive oxide layer thickness is deposited as 100 ~ 500nm, and metal layer thickness is deposited as 10 ~ 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110054872.2A CN102683433B (en) | 2011-03-09 | 2011-03-09 | With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110054872.2A CN102683433B (en) | 2011-03-09 | 2011-03-09 | With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102683433A CN102683433A (en) | 2012-09-19 |
| CN102683433B true CN102683433B (en) | 2016-04-13 |
Family
ID=46815091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110054872.2A Active CN102683433B (en) | 2011-03-09 | 2011-03-09 | With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102683433B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103884122B (en) * | 2012-12-21 | 2018-05-11 | 中国建筑材料科学研究总院 | A kind of solar energy optical-thermal conversion transparent heat mirror of heat collector and preparation method thereof |
| CN103441167B (en) * | 2013-07-18 | 2016-08-24 | 新奥光伏能源有限公司 | A kind of silicon-based film solar cells assembly and preparation method thereof |
| CN104691040B (en) * | 2015-02-15 | 2017-07-04 | 宜昌南玻显示器件有限公司 | Antireflective coating, its preparation method and anti reflection glass |
| CN106113787B (en) * | 2015-05-07 | 2018-12-07 | 黄河科技学院 | A kind of high light transmission electro-conductive glass and preparation method thereof |
| CN106117589A (en) * | 2016-07-29 | 2016-11-16 | 郑州航空工业管理学院 | Anti-icing antifog nesa coating of a kind of electrical heating for invisbile plane and preparation method thereof |
| CN107380072A (en) * | 2017-07-27 | 2017-11-24 | 信利光电股份有限公司 | A kind of electrochromic rearview structure |
| CN112909112B (en) * | 2021-01-18 | 2022-05-10 | 江苏新源太阳能科技有限公司 | Photovoltaic module for improving photoelectric conversion efficiency and preparation method thereof |
| CN113393770A (en) * | 2021-06-23 | 2021-09-14 | 武汉华星光电技术有限公司 | Flexible display module and flexible display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938791A (en) * | 2004-09-13 | 2007-03-28 | 住友金属矿山株式会社 | Transparent conductive film, process for producing the same, transparent conductive base material and luminescent device |
| CN101531468A (en) * | 2009-04-01 | 2009-09-16 | 中国科学院上海光学精密机械研究所 | Method for preparing porous silicon dioxide antireflective film with controllable refractive index |
| CN202013889U (en) * | 2011-03-09 | 2011-10-19 | 常州亚玛顿股份有限公司 | Conductive glass with double sided anti-reflection film for thin film solar cells |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
-
2011
- 2011-03-09 CN CN201110054872.2A patent/CN102683433B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938791A (en) * | 2004-09-13 | 2007-03-28 | 住友金属矿山株式会社 | Transparent conductive film, process for producing the same, transparent conductive base material and luminescent device |
| CN101531468A (en) * | 2009-04-01 | 2009-09-16 | 中国科学院上海光学精密机械研究所 | Method for preparing porous silicon dioxide antireflective film with controllable refractive index |
| CN202013889U (en) * | 2011-03-09 | 2011-10-19 | 常州亚玛顿股份有限公司 | Conductive glass with double sided anti-reflection film for thin film solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102683433A (en) | 2012-09-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102683433B (en) | With the thin-film solar cells electro-conductive glass and preparation method thereof of two-sided antireflective coating | |
| CN102683436B (en) | A kind of thin-film solar cells electro-conductive glass and preparation method thereof | |
| CN102683435B (en) | Thin-film solar cells electro-conductive glass and preparation method thereof | |
| CN206553403U (en) | A kind of high infrared reflection coated glass | |
| KR101194257B1 (en) | Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same | |
| CN101648777A (en) | High-transmittance TP glass and manufacturing method thereof | |
| CN105132874A (en) | Method for preparing high-concentration gradient AZO monocrystalline conductive thin film by direct current/radio frequency co-sputtering process | |
| CN111962023B (en) | Spectrum selective reflecting film and preparation method thereof | |
| CN101582460B (en) | Multilayer transparent conductive film of thin film solar cell and manufacturing method thereof | |
| CN201343500Y (en) | High transmission conductive glass for touch screen | |
| CN111477710A (en) | Blue front plate glass for photovoltaic module and blue photovoltaic module prepared from same | |
| CN111584647A (en) | Yellow front plate glass for photovoltaic module and yellow photovoltaic module prepared from same | |
| CN109709737B (en) | Method for manufacturing electrochromic film | |
| CN101497992A (en) | Method for preparing pile face zinc oxide transparent conductive film coating glass by plasma bombardment | |
| CN102683434B (en) | With the thin-film solar cells electro-conductive glass and preparation method thereof of one side antireflective coating | |
| CN103526169A (en) | Preparation method of aluminum-doped zinc oxide (AZO) transparent conducting film | |
| CN202067794U (en) | Conductive glass with single-sided antireflective film for film solar battery | |
| CN105084773A (en) | Anti-reflection vanishing AZO conductive glass, and manufacture method and touch control apparatus thereof | |
| CN103137717A (en) | Copper doped tin oxide transparent conductive membrane and preparation method thereof | |
| CN202013889U (en) | Conductive glass with double sided anti-reflection film for thin film solar cells | |
| CN202127021U (en) | Conductive glass for thin film solar cell | |
| CN111584652A (en) | Green front plate glass for photovoltaic module and green photovoltaic module prepared from same | |
| US20150279500A1 (en) | Sputtered transparent conductive aluminum doped zinc oxide films | |
| US11500257B2 (en) | Inorganic solid-state electrochromic module containing inorganic transparent conductive film | |
| CN103203912A (en) | Novel AZO coated glass and preparation technology thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |