CN102625955B - 纹理化硅衬底表面的方法和用于太阳能电池的纹理化的硅衬底 - Google Patents
纹理化硅衬底表面的方法和用于太阳能电池的纹理化的硅衬底 Download PDFInfo
- Publication number
- CN102625955B CN102625955B CN201080047840.3A CN201080047840A CN102625955B CN 102625955 B CN102625955 B CN 102625955B CN 201080047840 A CN201080047840 A CN 201080047840A CN 102625955 B CN102625955 B CN 102625955B
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- veining
- scope
- radio frequency
- inverted pyramid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000007789 gas Substances 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- VDRSDNINOSAWIV-UHFFFAOYSA-N [F].[Si] Chemical compound [F].[Si] VDRSDNINOSAWIV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0955767A FR2949276B1 (fr) | 2009-08-24 | 2009-08-24 | Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire |
FR0955767 | 2009-08-24 | ||
PCT/FR2010/051756 WO2011023894A2 (fr) | 2009-08-24 | 2010-08-23 | Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102625955A CN102625955A (zh) | 2012-08-01 |
CN102625955B true CN102625955B (zh) | 2015-11-25 |
Family
ID=42110315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080047840.3A Active CN102625955B (zh) | 2009-08-24 | 2010-08-23 | 纹理化硅衬底表面的方法和用于太阳能电池的纹理化的硅衬底 |
Country Status (13)
Country | Link |
---|---|
US (1) | US8592949B2 (zh) |
EP (1) | EP2471103B1 (zh) |
JP (1) | JP5661771B2 (zh) |
KR (1) | KR101668729B1 (zh) |
CN (1) | CN102625955B (zh) |
AU (1) | AU2010288393B2 (zh) |
BR (1) | BR112012004116A2 (zh) |
ES (1) | ES2716503T3 (zh) |
FR (1) | FR2949276B1 (zh) |
MX (1) | MX2012002246A (zh) |
MY (1) | MY153996A (zh) |
WO (1) | WO2011023894A2 (zh) |
ZA (1) | ZA201201410B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009005168A1 (de) * | 2009-01-14 | 2010-07-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat |
JP5297543B2 (ja) * | 2011-03-30 | 2013-09-25 | パナソニック株式会社 | テクスチャ形成面を有するシリコン基板、およびその製造方法 |
FR2984769B1 (fr) | 2011-12-22 | 2014-03-07 | Total Sa | Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure |
US20140004648A1 (en) * | 2012-06-28 | 2014-01-02 | International Business Machines Corporation | Transparent conductive electrode for three dimensional photovoltaic device |
JP5858889B2 (ja) * | 2012-09-24 | 2016-02-10 | 三菱電機株式会社 | 太陽電池用基板、その製造方法、太陽電池及びその製造方法 |
JP6308438B2 (ja) * | 2012-10-23 | 2018-04-11 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6074560B2 (ja) * | 2014-03-21 | 2017-02-08 | ナルックス株式会社 | 光学素子の製造方法及び光学素子用成型型の製造方法 |
EP2933843A1 (en) | 2014-04-17 | 2015-10-21 | Total Marketing Services | Solar cell and method for manufacturing such a solar cell |
DE102014110608B4 (de) | 2014-07-28 | 2020-10-08 | Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung | Verfahren zur Anschlussprozessierung einer Siliziumschicht |
EP3038164B1 (en) | 2014-12-22 | 2018-12-12 | Total S.A. | Opto-electronic device with textured surface and method of manufacturing thereof |
EP3550611A1 (en) | 2018-04-06 | 2019-10-09 | Total Solar International | Method for manufacturing a photovoltaic device |
EP3579284A1 (en) | 2018-06-08 | 2019-12-11 | Total SA | Method to obtain a photovoltaic device |
EP3579285A1 (en) | 2018-06-08 | 2019-12-11 | Total SA | Method to obtain a photovoltaic device |
EP3648174A1 (en) | 2018-10-31 | 2020-05-06 | Total SA | Photovoltaic assembly |
CN118116986A (zh) * | 2024-02-07 | 2024-05-31 | 隆基绿能科技股份有限公司 | 一种太阳能电池和光伏组件 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1914131A (zh) * | 2004-01-28 | 2007-02-14 | 法国圣-戈班玻璃公司 | 清洁基材的方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002164555A (ja) * | 2000-11-27 | 2002-06-07 | Kyocera Corp | 太陽電池およびその形成方法 |
JP2003273382A (ja) * | 2002-03-12 | 2003-09-26 | Kyocera Corp | 太陽電池素子 |
JP2005303255A (ja) * | 2004-03-17 | 2005-10-27 | Shinryo Corp | 太陽電池用シリコン基板の低反射率加工方法 |
KR100789987B1 (ko) * | 2005-05-24 | 2008-01-02 | 성균관대학교산학협력단 | 실리콘 건식식각을 이용한 웨이퍼 표면의 나노 피라미드 구조 형성방법 및 이 구조를 이용한 게이트 메모리 |
JP4587988B2 (ja) * | 2006-06-13 | 2010-11-24 | 京セラ株式会社 | 太陽電池素子の製造方法 |
-
2009
- 2009-08-24 FR FR0955767A patent/FR2949276B1/fr active Active
-
2010
- 2010-08-23 KR KR1020127004972A patent/KR101668729B1/ko active IP Right Grant
- 2010-08-23 WO PCT/FR2010/051756 patent/WO2011023894A2/fr active Application Filing
- 2010-08-23 MY MYPI2012000835A patent/MY153996A/en unknown
- 2010-08-23 AU AU2010288393A patent/AU2010288393B2/en active Active
- 2010-08-23 ES ES10762743T patent/ES2716503T3/es active Active
- 2010-08-23 JP JP2012526101A patent/JP5661771B2/ja active Active
- 2010-08-23 US US13/391,884 patent/US8592949B2/en active Active
- 2010-08-23 EP EP10762743.2A patent/EP2471103B1/fr active Active
- 2010-08-23 BR BR112012004116A patent/BR112012004116A2/pt not_active Application Discontinuation
- 2010-08-23 MX MX2012002246A patent/MX2012002246A/es active IP Right Grant
- 2010-08-23 CN CN201080047840.3A patent/CN102625955B/zh active Active
-
2012
- 2012-02-24 ZA ZA2012/01410A patent/ZA201201410B/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1914131A (zh) * | 2004-01-28 | 2007-02-14 | 法国圣-戈班玻璃公司 | 清洁基材的方法 |
Non-Patent Citations (2)
Title |
---|
Black surface structures for crystalline silicon solar cells;Jinsu Yoo等;《Materials Science and Engineering B》;20090315;第159-160卷;第333-337页 * |
High -Density Hollow Cathode Plasma Etching for Large Area Multicrystalline Silicon Solar Cells;W.J.Lee等;《Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference》;20020524;第296-299页 * |
Also Published As
Publication number | Publication date |
---|---|
BR112012004116A2 (pt) | 2016-03-15 |
MX2012002246A (es) | 2012-12-17 |
US8592949B2 (en) | 2013-11-26 |
ZA201201410B (en) | 2012-10-31 |
FR2949276A1 (fr) | 2011-02-25 |
FR2949276B1 (fr) | 2012-04-06 |
MY153996A (en) | 2015-04-30 |
WO2011023894A2 (fr) | 2011-03-03 |
EP2471103B1 (fr) | 2019-01-02 |
JP5661771B2 (ja) | 2015-01-28 |
US20120146194A1 (en) | 2012-06-14 |
KR101668729B1 (ko) | 2016-10-24 |
AU2010288393A1 (en) | 2012-03-15 |
KR20120051047A (ko) | 2012-05-21 |
AU2010288393B2 (en) | 2014-09-18 |
JP2013502737A (ja) | 2013-01-24 |
ES2716503T3 (es) | 2019-06-12 |
EP2471103A2 (fr) | 2012-07-04 |
WO2011023894A3 (fr) | 2012-05-03 |
CN102625955A (zh) | 2012-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102625955B (zh) | 纹理化硅衬底表面的方法和用于太阳能电池的纹理化的硅衬底 | |
Moreno et al. | A comparative study of wet and dry texturing processes of c-Si wafers for the fabrication of solar cells | |
US6663944B2 (en) | Textured semiconductor wafer for solar cell | |
KR100855682B1 (ko) | 태양전지의 실리콘 표면 텍스쳐링 방법 | |
US8329046B2 (en) | Methods for damage etch and texturing of silicon single crystal substrates | |
JP2004235274A (ja) | 多結晶シリコン基板およびその粗面化法 | |
JP2010258456A (ja) | 周期構造を有するシリコン基板 | |
Angermann et al. | Optimisation of electronic interface properties of a-Si: H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment | |
US20220344106A1 (en) | Perovskite/silicon tandem photovoltaic device | |
CN102270688A (zh) | 一种太阳能电池 | |
WO2010072862A1 (es) | Células solares de película delgada con texturas combinadas | |
CN106057921B (zh) | 微纳米绒面太阳能电池的发射极、及其制备方法和用途 | |
Addonizio et al. | Plasma etched c-Si wafer with proper pyramid-like nanostructures for photovoltaic applications | |
Damiani et al. | Development of RIE-textured silicon solar cells | |
JP4248793B2 (ja) | 薄膜太陽電池の製造方法 | |
US20110180132A1 (en) | Texturing and damage etch of silicon single crystal (100) substrates | |
KR101068800B1 (ko) | 태양전지의 제조 방법 | |
KR101076355B1 (ko) | 태양 전지 및 그 제조 방법 | |
WO2012165288A1 (ja) | 太陽電池の製造方法 | |
KR101718630B1 (ko) | 태양전지용 실리콘 기판의 표면처리방법 | |
JP6324904B2 (ja) | シリコン基板の表面を粗面化する方法、粗面化した基板及び粗面化した基板を備える光電池 | |
TWI353064B (zh) | ||
Md Daud et al. | A Novel Optical Modification on P-Type Silicon Wafer Using Cyclic–Voltammetry Treatment for Boosting the Uniform Pyramidal Structure and Higher Efficiency of Silicon Solar Cells | |
Im et al. | Shape-Controllable Surface Texturization for Crystalline Silicon Solar Cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS Free format text: FORMER OWNER: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) Effective date: 20150717 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150717 Address after: Palaiseau France Applicant after: Ecole Polytech Applicant after: Centre National de La Recherche Scientifique (CNRS) Applicant after: Total Sales Service Corp. Address before: Palaiseau France Applicant before: Ecole Polytech Applicant before: Centre National de La Recherche Scientifique (CNRS) |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |