KR101068800B1 - 태양전지의 제조 방법 - Google Patents
태양전지의 제조 방법 Download PDFInfo
- Publication number
- KR101068800B1 KR101068800B1 KR1020090063931A KR20090063931A KR101068800B1 KR 101068800 B1 KR101068800 B1 KR 101068800B1 KR 1020090063931 A KR1020090063931 A KR 1020090063931A KR 20090063931 A KR20090063931 A KR 20090063931A KR 101068800 B1 KR101068800 B1 KR 101068800B1
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- surface area
- wafer
- reflectance
- etching
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000031700 light absorption Effects 0.000 claims abstract description 10
- 238000001020 plasma etching Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (5)
- 삭제
- 표면적을 증가시키고 빛의 반사율을 낮춰서 빛의 흡수율을 향상시키는 WET 텍스춰링 공정과;상기 WET 텍스춰링한 웨이퍼 표면에 추가로 표면적을 증가시키고 반사율이 저하되도록 하기 위한 추가 텍스춰링 공정을 포함하여 이루어지되,상기 추가 텍스춰링 공정은 단결정 실리콘 웨이퍼의 표면을 애니소트로픽 에칭으로 10μm 이하의 피라미드를 형성한 후 RIE(Reactive Ion Etching)를 포함하는 에칭(etching) 공정을 이용하여 균일한 모양의 미세 구조물을 형성하는 공정을 포함하여 이루어지는 것을 특징으로 하는 태양전지의 제조 방법.
- 제2항에 있어서, 균일한 모양의 미세 구조물은 1차 형성된 피라미드 보다 작은 모양으로 추가로 형성되는 것을 특징으로 하는 태양전지의 제조 방법.
- 표면적을 증가시키고 빛의 반사율을 낮춰서 빛의 흡수율을 향상시키는 WET 텍스춰링 공정과;상기 WET 텍스춰링한 웨이퍼 표면에 추가로 표면적을 증가시키고 반사율이 저하되도록 하기 위한 추가 텍스춰링 공정을 포함하여 이루어지되,추가 텍스춰링 공정은 다결정 실리콘 웨이퍼의 표면을 아이소트로픽 에칭으로 10μm 이하의 크라운 모양의 요철을 형성한 후 RIE(Reactive Ion Etching)를 포함하는 에칭(etching) 공정을 이용하여 균일한 모양의 미세 구조물을 형성하는 공정을 포함하여 이루어지는 것을 특징으로 하는 태양전지의 제조 방법.
- 제4항에 있어서, 균일한 모양의 미세 구조물은 1차 형성된 크라운 모양의 요철에 보다 작은 모양으로 미세구조물이 추가로 형성되는 것을 특징으로 하는 태양전지의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090063931A KR101068800B1 (ko) | 2009-07-14 | 2009-07-14 | 태양전지의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090063931A KR101068800B1 (ko) | 2009-07-14 | 2009-07-14 | 태양전지의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110006342A KR20110006342A (ko) | 2011-01-20 |
KR101068800B1 true KR101068800B1 (ko) | 2011-10-04 |
Family
ID=43613196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090063931A KR101068800B1 (ko) | 2009-07-14 | 2009-07-14 | 태양전지의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101068800B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102810594B (zh) * | 2011-05-31 | 2015-11-25 | 茂迪(苏州)新能源有限公司 | 类单晶硅片的制绒方法 |
CN110137283A (zh) * | 2019-06-10 | 2019-08-16 | 通威太阳能(安徽)有限公司 | 一种增大比表面积的单晶硅电池片及其制绒方法 |
CN114361273A (zh) * | 2021-12-03 | 2022-04-15 | 宁夏隆基乐叶科技有限公司 | 硅片及其制备方法和太阳能电池 |
-
2009
- 2009-07-14 KR KR1020090063931A patent/KR101068800B1/ko active IP Right Grant
Non-Patent Citations (1)
Title |
---|
논문 1 : OPTO-ELECTRONICS REVIEW, 2000 |
Also Published As
Publication number | Publication date |
---|---|
KR20110006342A (ko) | 2011-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20220059718A1 (en) | Method for passivating silicon-based semiconductor device, and silicon-based semiconductor device | |
KR100677374B1 (ko) | 박판 실리콘 기판을 이용한 다공성 실리콘 태양전지 및 그제조방법 | |
WO2012121706A1 (en) | Efficient black silicon photovoltaic devices with enhanced blue response | |
JP6482692B2 (ja) | 太陽電池素子 | |
WO2010064303A1 (ja) | 太陽電池セルの製造方法 | |
Kulakci et al. | Application of Si nanowires fabricated by metal-assisted etching to crystalline Si solar cells | |
WO2011161813A1 (ja) | 太陽電池セルおよびその製造方法 | |
EP2691989A2 (en) | Method for manufacturing solar cell | |
CN103029423A (zh) | 太阳能电池片及其印刷丝网 | |
JP2016122749A (ja) | 太陽電池素子および太陽電池モジュール | |
TWI401810B (zh) | 太陽能電池 | |
KR101068800B1 (ko) | 태양전지의 제조 방법 | |
WO2012104997A1 (ja) | 太陽電池セルとその製造方法、および太陽電池モジュール | |
US20220344106A1 (en) | Perovskite/silicon tandem photovoltaic device | |
Shi et al. | Nanoporous black multi-crystalline silicon solar cells: Realization of low reflectance and explanation of high recombination loss | |
CN106784049B (zh) | 一种局部掺杂晶体硅太阳能电池的制备方法及其制得的电池 | |
KR101622088B1 (ko) | 태양전지 | |
JP2005136081A (ja) | 太陽電池の製造方法 | |
CN115224137B (zh) | 半导体衬底及太阳能电池和光伏组件 | |
CN105244417A (zh) | 一种晶硅太阳能电池及其制备方法 | |
KR101382585B1 (ko) | 초박형 에미터 접합층을 갖는 블랙 실리콘 태양전지 및 그 제조방법 | |
Sheng et al. | MACE texture optimization for mass production of high-efficiency multi-crystalline cell and module | |
Zhong et al. | The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature | |
JP5745598B2 (ja) | 太陽電池用基板の表面処理方法 | |
JP2011159872A (ja) | 電極の製造方法、太陽電池の製造方法および光電変換素子の製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140923 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150922 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160908 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170803 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180821 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190826 Year of fee payment: 9 |