CN102623366B - 监测退火过程温度的方法 - Google Patents
监测退火过程温度的方法 Download PDFInfo
- Publication number
- CN102623366B CN102623366B CN201110037453.8A CN201110037453A CN102623366B CN 102623366 B CN102623366 B CN 102623366B CN 201110037453 A CN201110037453 A CN 201110037453A CN 102623366 B CN102623366 B CN 102623366B
- Authority
- CN
- China
- Prior art keywords
- wafer
- monitoring
- annealing
- annealing process
- process temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110037453.8A CN102623366B (zh) | 2011-01-27 | 2011-01-27 | 监测退火过程温度的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110037453.8A CN102623366B (zh) | 2011-01-27 | 2011-01-27 | 监测退火过程温度的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102623366A CN102623366A (zh) | 2012-08-01 |
CN102623366B true CN102623366B (zh) | 2014-10-29 |
Family
ID=46563202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110037453.8A Active CN102623366B (zh) | 2011-01-27 | 2011-01-27 | 监测退火过程温度的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102623366B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103745947B (zh) * | 2014-01-29 | 2016-03-23 | 上海华力微电子有限公司 | 用于激光退火机的监控方法 |
CN106783687A (zh) * | 2016-12-26 | 2017-05-31 | 株洲中车时代电气股份有限公司 | 一种改善离子注入监控的方法 |
CN110359032A (zh) * | 2019-07-18 | 2019-10-22 | 北京北方华创微电子装备有限公司 | 温度补偿方法及恒温区温度校准方法 |
CN111524825B (zh) * | 2020-04-30 | 2022-09-20 | 华虹半导体(无锡)有限公司 | 氧化膜中氯含量的检测方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1489194A (zh) * | 2002-10-11 | 2004-04-14 | 中芯国际集成电路制造(上海)有限公 | 快速热退火工艺的每日监控的控片 |
CN1531045A (zh) * | 2003-03-10 | 2004-09-22 | 中芯国际集成电路制造(上海)有限公 | 热探针的监控晶圆片的制成方法 |
CN101399163A (zh) * | 2007-09-28 | 2009-04-01 | 上海华虹Nec电子有限公司 | 校正外延反应腔温度的方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6015717A (en) * | 1998-03-13 | 2000-01-18 | Advanced Micro Devices, Inc. | Method for monitoring rapid thermal process integrity |
US7455448B2 (en) * | 2004-07-26 | 2008-11-25 | Texas Instruments Incorporated | Rapid thermal anneal equipment and method using sichrome film |
-
2011
- 2011-01-27 CN CN201110037453.8A patent/CN102623366B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1489194A (zh) * | 2002-10-11 | 2004-04-14 | 中芯国际集成电路制造(上海)有限公 | 快速热退火工艺的每日监控的控片 |
CN1531045A (zh) * | 2003-03-10 | 2004-09-22 | 中芯国际集成电路制造(上海)有限公 | 热探针的监控晶圆片的制成方法 |
CN101399163A (zh) * | 2007-09-28 | 2009-04-01 | 上海华虹Nec电子有限公司 | 校正外延反应腔温度的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102623366A (zh) | 2012-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101399163B (zh) | 校正外延反应腔温度的方法 | |
CN103189740B (zh) | 测绘氧浓度的方法 | |
CN102396055B (zh) | 退火晶片、退火晶片的制造方法以及器件的制造方法 | |
CN103165485B (zh) | 毫秒退火工艺稳定性的监测方法 | |
CN102623366B (zh) | 监测退火过程温度的方法 | |
CN105518441A (zh) | 用于定位铸块中的晶片的方法 | |
CN105551992A (zh) | 离子注入机台的测试方法 | |
JP6316798B2 (ja) | 半導体試料での格子間酸素濃度の決定 | |
CN109671620B (zh) | 半导体器件制备过程中的杂质扩散工艺 | |
CN103094143B (zh) | 离子注入监测方法 | |
CN107492492B (zh) | 退火设备工艺能力的监控方法 | |
CN110364449A (zh) | 栅氧掺氮退火温度的监控方法 | |
CN1322562C (zh) | 使用离子注入过的晶片监测低温急速热退火工艺 | |
CN107706122A (zh) | 一种退火工艺的检测方法 | |
US9577034B2 (en) | Compensation devices | |
JP4229273B2 (ja) | 熱処理炉内の半導体ウェーハの表面温度測定方法およびこの方法に用いられる温度モニタウェーハ | |
Reif | Phosphorus incorporation during silicon epitaxial growth in a CVD reactor | |
CN114334689A (zh) | 热处理机台的温度监测方法及校正方法 | |
CN103715301B (zh) | 一种高效扩散的方法 | |
CN111883452A (zh) | 一种热处理机台实际工作温度的确定方法 | |
TWI814488B (zh) | 高電阻矽晶圓的厚度測量方法以及平坦度測量方法 | |
US9799577B2 (en) | Heat treatment system, heat treatment method, and program | |
CN106328549B (zh) | 晶圆中氧沉淀的检测方法 | |
CN116936423A (zh) | 外延机台温度校正方法 | |
CN111524825B (zh) | 氧化膜中氯含量的检测方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Effective date: 20140403 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140403 Address after: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant after: Wuxi CSMC Semiconductor Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171215 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |