CN1489194A - 快速热退火工艺的每日监控的控片 - Google Patents
快速热退火工艺的每日监控的控片 Download PDFInfo
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- CN1489194A CN1489194A CNA021373949A CN02137394A CN1489194A CN 1489194 A CN1489194 A CN 1489194A CN A021373949 A CNA021373949 A CN A021373949A CN 02137394 A CN02137394 A CN 02137394A CN 1489194 A CN1489194 A CN 1489194A
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 02137394 CN1217398C (zh) | 2002-10-11 | 2002-10-11 | 快速热退火工艺的每日监控的控片 |
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CN 02137394 CN1217398C (zh) | 2002-10-11 | 2002-10-11 | 快速热退火工艺的每日监控的控片 |
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CN1489194A true CN1489194A (zh) | 2004-04-14 |
CN1217398C CN1217398C (zh) | 2005-08-31 |
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CN 02137394 Expired - Lifetime CN1217398C (zh) | 2002-10-11 | 2002-10-11 | 快速热退火工艺的每日监控的控片 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312139B (zh) * | 2007-05-22 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅膜阻值的测试方法 |
CN102623366A (zh) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | 监测退火过程温度的方法 |
CN104078376A (zh) * | 2014-08-04 | 2014-10-01 | 上海华力微电子有限公司 | 用于炉管高温退火工艺的控片、制造方法及监控方法 |
CN104377147A (zh) * | 2014-11-27 | 2015-02-25 | 株洲南车时代电气股份有限公司 | 一种离子注入监控片的重复利用方法 |
CN106783545A (zh) * | 2016-12-26 | 2017-05-31 | 南京国盛电子有限公司 | 一种平板外延炉温场的调节方法 |
CN115692236A (zh) * | 2022-12-16 | 2023-02-03 | 广州粤芯半导体技术有限公司 | 检测Silicide工艺中RTA温度的方法 |
-
2002
- 2002-10-11 CN CN 02137394 patent/CN1217398C/zh not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101312139B (zh) * | 2007-05-22 | 2011-04-20 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅膜阻值的测试方法 |
CN102623366A (zh) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | 监测退火过程温度的方法 |
CN102623366B (zh) * | 2011-01-27 | 2014-10-29 | 无锡华润上华半导体有限公司 | 监测退火过程温度的方法 |
CN104078376A (zh) * | 2014-08-04 | 2014-10-01 | 上海华力微电子有限公司 | 用于炉管高温退火工艺的控片、制造方法及监控方法 |
CN104377147A (zh) * | 2014-11-27 | 2015-02-25 | 株洲南车时代电气股份有限公司 | 一种离子注入监控片的重复利用方法 |
CN104377147B (zh) * | 2014-11-27 | 2017-11-14 | 株洲南车时代电气股份有限公司 | 一种离子注入监控片的重复利用方法 |
CN106783545A (zh) * | 2016-12-26 | 2017-05-31 | 南京国盛电子有限公司 | 一种平板外延炉温场的调节方法 |
CN115692236A (zh) * | 2022-12-16 | 2023-02-03 | 广州粤芯半导体技术有限公司 | 检测Silicide工艺中RTA温度的方法 |
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Publication number | Publication date |
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CN1217398C (zh) | 2005-08-31 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
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Effective date of registration: 20111129 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
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Granted publication date: 20050831 |
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