CN102618914B - Photon-assisted porous silicon electrochemical etching tank - Google Patents
Photon-assisted porous silicon electrochemical etching tank Download PDFInfo
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- CN102618914B CN102618914B CN201210110252.0A CN201210110252A CN102618914B CN 102618914 B CN102618914 B CN 102618914B CN 201210110252 A CN201210110252 A CN 201210110252A CN 102618914 B CN102618914 B CN 102618914B
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Abstract
The invention provides a photon-assisted porous silicon electrochemical etching tank which comprises a tank body, a fixing support, electrodes and a photon-assisted mechanism. The fixing support, the electrodes and the photon-assisted mechanism are arranged in the tank body; the fixing support is used for fixing a silicon chip to be etched; the electrodes comprises a cathode and an anode, and the cathode and the anode are fixed on two sides of the fixing support respectively; and the photon-assisted mechanism is arranged between the fixing support and the cathode, used for providing illumination for the silicon chip to be etched, and light source of the photon-assisted mechanism is sealed in transparent polycarbonate (PC) plastic which has a grooved gate structure to facilitate flow of etching solution. During a double groove electrochemical etching process, the photon-assisted mechanism between the cathode and the silicon chip to be etched in the tank body is used for irradiating the silicon chip to be etched directly at close range, therefore holes with a certain concentration are formed in the silicon chip to be etched, and quality and efficiency of the double groove electrochemical etching process are guaranteed.
Description
Technical field
The present invention relates to microelectronic mechanical apparatus technical field, particularly a kind of light auxiliary porous silicon galvanic corrosion groove.
Background technology
Along with the development of microelectromechanical systems (MEMS), porous silica material demonstrates extremely wide application prospect with its good mechanical property and thermal property in MEMS.First, rete based on porous silica material can be prepared into very thick, the materials such as SiO2 can be substituted as sacrifice layer in MEMS, make to discharge microstructure fast without the need to dual surface lithography when adopting body micro mechanical technology processing micro structure, well can solve structural sheet and basal spacing from too little problem in surface micromachining technique simultaneously; Secondly, because porous silicon has the thermal conductivity (can be low to moderate 1W/mK) far below silicon substrate, therefore in the quick sensor-based system of low-grade fever, adopt porous silicon can obtain temperature variation response fast and low thermal losses as thermal insulation layer, it also avoid the shortcoming of outstanding platform heat insulation structure easy adhesion because sacrificial layer thickness is little that traditional micro-sensitive system adopts simultaneously, substantially increase stability and the reliability of system; 3rd, utilize Siliciumatom under porous silicon high temperature process conditions that the characteristic of position migration occurs, the pressure chamber of novel MEMS pressure sensor can be made; 4th, Porous Silicon Technology is compatible with standard integrated circuit silicon technology.Exactly because the various properties having said structure feature and show thus, its technical advantage in addition, porous silicon and technology thereof obtain to be paid attention to widely and studies.
At present, preparing porous silicon, to adopt the widest be electrochemical corrosive process, and electrochemical corrosive process is mainly divided into single groove and double flute electrochemical corrosive process.Wherein, single groove electrochemical corrosive process is mainly used in treats corrosion of silicon back side band metal level, utilizes and treats that corrosion of silicon back metal is as electrode anode, treat corrosion of silicon front and carry out galvanic corrosion.Double flute electrochemical corrosive process is for treating that the porous silicon of the corrosion of silicon back side not with metal level corrodes.
Please refer to Fig. 1, it is the structural representation of existing porous silicon galvanic corrosion groove.As shown in Figure 1, porous silicon galvanic corrosion groove comprises: cell body 104; Be positioned at the anchor of described cell body 104, described anchor comprises the first anchor 107 and is positioned at the second anchor 106 below described first anchor; Be positioned at the electrode of described cell body 104, described electrode comprises cathode electrode 101 and anode electrode 102, and described cathode electrode 101 and anode electrode 102 lay respectively at described anchor both sides, and described cathode electrode 101 and anode electrode 102 are made up of metal platinum.
When utilize this porous silicon galvanic corrosion groove treat corrosion of silicon carry out etching process to form porous silicon time, corrosive fluid 105 is injected in affiliated cell body 104, to treat that corrosion of silicon 103 is placed in cell body 104, concrete, fixed by the first anchor 107 and the second anchor 106.Now, cell body 104 is treated that corrosion of silicon 103 is divided into two " half grooves ", be respectively guide channel 109 and etching tank 108, described guide channel 109 and etching tank 108 are by means of only treating that corrosion of silicon 103 realizes conducting, other parts mutually insulated, the double flute in these two " half groove " double flute electrochemical corrosive process.After electrode application voltage, due to the effect of electric field, electric current is by treating that corrosion of silicon 103 flows to etching tank 108 from guide channel 109, the hole for the treatment of in corrosion of silicon 103 will flow to treats corrosion of silicon 103 surface near cathode electrode 101, and what make this surface treats that galvanic corrosion occurs corrosion of silicon 103; Another side does not then react, and finally just can form porous silicon.
The principle of this double flute electrochemical corrosive process is: double flute galvanic corrosion Porous Silicon Technology to treat that corrosion of silicon does anode, when DC Electric Field, electric current is by treating that corrosion of silicon flows to etching tank from electrochemical guide channel, the hole for the treatment of in corrosion of silicon will flow to treats corrosion of silicon surface near cathode electrode, thus make this surface treat corrosion of silicon generation galvanic corrosion, the negatively charged ion (OH-and F-) treating in corrosion of silicon and corrosive fluid as anode carries out electrochemical reaction and generates silicon-dioxide under the effect treating hole in corrosion of silicon (positive charge), this silicon-dioxide and then the liquid that can be corroded again react away, when control reaction conditions, reaction process is made to reach non-equilibrium sexual state, corrosion of silicon Surface Creation porous will treated, final formation porous silicon.
But realize double flute electrochemical corrosive process by this porous silicon galvanic corrosion groove and there is following Railway Project:
First, treat that the hole concentration in corrosion of silicon is most important for the speed of double flute electrochemical corrosive process, but, treat in existing technique that the hole concentration in corrosion of silicon is difficult to control, thus cause the quality of double flute electrochemical corrosive process and efficiency can not be guaranteed;
Secondly, in corrosion process, the electrode be made up of metal platinum is easily corroded, and causes and treats corrosion of silicon has heavy metal stain, thus be unfavorable for and conventional IC semiconductor process compatible, affect the following process of silicon chip on semiconductor production line after porous silicon corrosion.
Summary of the invention
The object of the present invention is to provide a kind of light auxiliary porous silicon galvanic corrosion groove, to treat in the double flute electrochemical corrosive process solving prior art that the hole concentration in corrosion of silicon is difficult to control, thus cause the problem that the quality of double flute electrochemical corrosive process and efficiency can not be guaranteed.
For solving the problems of the technologies described above, the invention provides a kind of light auxiliary porous silicon galvanic corrosion groove, comprising:
Cell body;
Be positioned at the anchor in order to fixedly to treat corrosion of silicon of described cell body;
Be positioned at the electrode of described cell body, described electrode comprises cathode electrode and anode electrode, and described cathode electrode and anode electrode lay respectively at described anchor both sides;
Also comprise: the light supplementary structure being positioned at described cell body, described smooth supplementary structure between described anchor and cathode electrode, in order to treat that corrosion of silicon provides illumination to described.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described electrode is Graphite Electrodes.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described anchor fixedly treats corrosion of silicon, and treats that corrosion of silicon front and back corrosive fluid seepage does not occur.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described in treat that described cell body is separated into guide channel and etching tank by corrosion of silicon.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described smooth supplementary structure comprises: light source and clear polycarbonate PC plastics, and described light source is sealed in described clear polycarbonate PC plastics.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described clear polycarbonate PC plastics are slot grid structure, make corrosive fluid flow to opposite side from the side of clear polycarbonate PC plastics.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described clear polycarbonate PC plastics are the slot grid structure of multiple donut composition.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described clear polycarbonate PC plastics are vertical pectination slot grid structure.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described clear polycarbonate PC plastics are horizontal type pectination slot grid structure.
Optionally, in described light auxiliary porous silicon galvanic corrosion groove, described light source comprises LED.
In smooth auxiliary porous silicon galvanic corrosion groove provided by the invention, when carrying out double flute electrochemical corrosive process, by treating the light supplementary structure between corrosion of silicon at electrode and one in cell body, closely, directly corrosion of silicon is treated in irradiation, thus effectively treating in corrosion of silicon, to form certain density hole, and then ensure quality and the efficiency of double flute electrochemical corrosive process.
Further, in smooth auxiliary porous silicon galvanic corrosion groove provided by the invention, the electrode of external electric field is provided to be Graphite Electrodes, the stable chemical nature of graphite, avoid and do electrode by metal platinum, easily treating the risk that corrosion of silicon has heavy metal stain, be conducive to and semiconductor technology compatible.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing porous silicon galvanic corrosion groove;
Fig. 2 is the structural representation of the light auxiliary porous silicon galvanic corrosion groove of the embodiment of the present invention;
Fig. 3 is one of structural representation of the light supplementary structure of the embodiment of the present invention;
Fig. 4 is the structural representation two of the light supplementary structure of the embodiment of the present invention;
Fig. 5 is the structural representation three of the light supplementary structure of the embodiment of the present invention;
Fig. 6 is one of structural representation of the electrode of the embodiment of the present invention;
Fig. 7 is the structural representation two of the electrode of the embodiment of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the light auxiliary porous silicon galvanic corrosion groove that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 2, it is the structural representation of the light auxiliary porous silicon galvanic corrosion groove of the embodiment of the present invention.As shown in Figure 2, described smooth auxiliary porous silicon galvanic corrosion groove comprises:
Cell body 204;
Be positioned at the anchor in order to fixedly to treat corrosion of silicon 203 of described cell body 204;
Be positioned at the electrode of described cell body 204, described electrode comprises cathode electrode 201 and anode electrode 202, and described cathode electrode 201 and anode electrode 202 lay respectively at described anchor both sides; And
Be positioned at the light supplementary structure 208 of described cell body 204, described smooth supplementary structure 208 between described anchor and cathode electrode 201, in order to treat that corrosion of silicon 203 provides illumination to described.
Concrete, described anchor comprises the first anchor 207 and is positioned at the second anchor 206 below described first anchor 207, describedly treat that corrosion of silicon 203 is fixed by described first anchor 207 and the second anchor 206, now, will make to treat that corrosion of silicon 203 front and back corrosive fluid seepage does not occur.Describedly treat that described cell body 204 is separated into guide channel 209 and etching tank 210 by corrosion of silicon 203, anchor and treat that corrosion of silicon need realize the mutual electrical isolation of both sides liquid, i.e. so-called double flute, thus just can realize double flute electrochemical corrosive process.
At this, described smooth supplementary structure 208 is at cathode electrode 201 and treat between corrosion of silicon 203.That is, described smooth supplementary structure 208 and cathode electrode 201 are positioned at etching tank 210, and described anode electrode 202 is positioned at guide channel 209.
When carrying out double flute electrochemical corrosive process, switching on power and inject corrosive fluid 205 in described cell body 204, preferably, described corrosive fluid 205 is that hydrofluoric acid solution or hydrofluoric acid add ethanolic soln, and its percentage concentration is 15% ~ 25%.
At this, by in cell body 204 and at cathode electrode 201 and treat between corrosion of silicon 203 light supplementary structure 208, closely, directly corrosion of silicon 203 is treated in irradiation, thus effectively treating to form certain density hole in corrosion of silicon 203, and then ensure quality and the efficiency of double flute electrochemical corrosive process.
Wherein, the principle of the hole concentration in corrosion of silicon 203 can be excited to be by this light supplementary structure 208: when semiconductor light silicon materials (namely until corrosion of silicon) are subject to rayed, electronics in its valence band is excited to conduction band, produce electron-hole pair, and then the hole concentration created needed for reaction, improve the etching condition forming porous silicon and set up.
Further, described electrode is Graphite Electrodes, due to the stable chemical nature of graphite, avoids and does electrode by metal platinum, is easily treating risk that corrosion of silicon 203 has heavy metal to stain, be conducive to and semiconductor technology compatible.
In the present embodiment, the distance between described smooth supplementary structure 208 and described anchor (namely and be fixed on described anchor treats corrosion of silicon 203) is 20mm ~ 200mm.In this distance range, obtained hole concentration be can effectively control, and then the quality and efficiency that form porous silicon improved.
Please refer to Fig. 3, it is one of structural representation of the light supplementary structure of the embodiment of the present invention.As shown in Figure 3, concrete, described smooth supplementary structure 208 comprises: light source 401 and clear polycarbonate PC plastics 402, and described light source 401 is sealed in described clear polycarbonate PC plastics 402.At this, described clear polycarbonate PC plastics 402 are slot grid structure, make corrosive fluid 205 flow to opposite side from the side of clear polycarbonate PC plastics 402.Concrete, described clear polycarbonate PC plastics 402 comprise multiple donut, have gap 403 between adjacent two annulus.The quantity of described annulus is 3 ~ 6, and the gap between adjacent two annulus is 5mm ~ 20mm.In the present embodiment, the diameter being positioned at the annulus of outermost is 150mm ~ 160mm, and the ring width of each annulus is 3mm ~ 15mm.
By clear polycarbonate PC plastics 402 are arranged to the donut with gap 403, both can ensure to treat that corrosion of silicon 203 can be subject to uniform irradiation, the corrosive fluid 205 flow in cell body 204 can be made again to be easy to flowing, thus to improve the efficiency that corrosion forms porous silicon.
In the present embodiment, described light source is LED, and the quantity of described LED is 18 ~ 96.The voltage of described LED is 12V ~ 24V, and power is 6W ~ 36W.Preferably, the quantity of described LED is 18,27,36,45,54,63,72,81 or 96.Multiple LED is distributed in each annulus uniformly, namely described light source is groove palisade, thus treat that corrosion of silicon 203 irradiates uniformly, the hole produced is uniformly distributed in treats in corrosion of silicon 203, thus make to treat that the corrosion efficiency that corrosion of silicon 203 is often located is suitable, improve the quality of the porous silicon formed.Certainly, in other embodiments of the invention, described light source can be also cold-cathode lamp, and the application is not construed as limiting this.
In other embodiments of the invention, described clear polycarbonate PC plastics also can be vertical pectination slot grid structure (as shown in Figure 4), or horizontal type pectination slot grid structure (as shown in Figure 5), namely make corrosive fluid can flow to opposite side from the side of clear polycarbonate PC plastics easily, the application does not limit this.
Please refer to Fig. 6, it is one of structural representation of the electrode of the embodiment of the present invention.As shown in Figure 6, the shape of described electrode (i.e. cathode electrode 201 and anode electrode 202) is T-shaped, the bottom electroplax that T-shaped electrode comprises upper beam and is connected with this upper beam, accordingly, the sidewall of described cell body 204 has draw-in groove (not shown in Fig. 2), thus, described upper beam card and in described draw-in groove.At this, described bottom electroplax is square, and the length of side is 200mm.Described electrode has multiple through hole 301, especially, described through hole 301 is positioned on the electroplax of described bottom, and the diameter D of described through hole 301 is 2mm ~ 4mm, and the distance d between adjacent two through holes 301 is 2mm ~ 4mm.Preferably, the quantity of described through hole 301 is 200 ~ 400, and the plurality of through hole 301 is distributed on described electrode uniformly.Thus, both can ensure to treat that corrosion of silicon 203 can be subject to uniform electric field, the corrosive fluid 205 flow in cell body 204 can be made again to be easy to flowing, thus improve the efficiency that corrosion forms porous silicon.
In other embodiments of the invention, described electrode also can be other shapes, such as: the shape of described electrode is T-shaped, the bottom electroplax that T-shaped electrode comprises upper beam and is connected with this upper beam, described bottom electroplax is circular/oval (as shown in Figure 7) etc., and the application does not limit this.
In the present embodiment, the thickness of described electrode is 5mm ~ 10mm, the voltage that described electrode loads is 20V ~ 100V, the electric current that described electrode loads is galvanic current or the positive negative impulse current of 1A ~ 5A, voltage/current peak value be the pulse power of 20 ~ 100V/ (1 ~ 5A).Wherein, the current density of direct supply is 12 ~ 80mA/cm
2, the forward current density of the pulse power is 2 ~ 10mA/cm
3, the time is 20 ~ 100ms, and reverse current density is 0 ~ 1mA/cm
3, the time is 2 ~ 10ms.
Preferably, the distance between described anode electrode 202 and described anchor (namely and be fixed on described anchor treats corrosion of silicon 203) is 10mm ~ 30mm; Distance between described cathode electrode 201 and described anchor (namely and be fixed on described anchor treats corrosion of silicon 203) is 50mm ~ 200mm.
In the present embodiment, the shape of described cell body 204 is cuboid, and length is 20cm ~ 50cm, and width is 20cm ~ 30cm, and the degree of depth is 20cm ~ 40cm, and what namely this porous silicon galvanic corrosion groove was applicable to process 6 cun treats corrosion of silicon.Certainly, the difference treating corrosion of silicon size processed as required, what such as need process 8 cun treats corrosion of silicon, and the size of described cell body 204 can correspondingly change.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (7)
1. a light auxiliary porous silicon galvanic corrosion groove, comprising:
Cell body;
Be positioned at the anchor in order to fixedly to treat corrosion of silicon of described cell body;
Be positioned at the electrode of described cell body, described electrode comprises cathode electrode and anode electrode, and described cathode electrode and anode electrode lay respectively at described anchor both sides;
It is characterized in that, also comprise: the light supplementary structure being positioned at described cell body, described smooth supplementary structure between described anchor and cathode electrode, in order to treat that corrosion of silicon provides illumination to described; Described electrode is Graphite Electrodes; Described smooth supplementary structure comprises light source and clear polycarbonate PC plastics, and described light source is sealed in described clear polycarbonate PC plastics; Described clear polycarbonate PC plastics are slot grid structure, make corrosive fluid flow to opposite side from the side of clear polycarbonate PC plastics.
2. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 1, is characterized in that, described anchor fixedly treats corrosion of silicon, and treat that corrosion of silicon front and back corrosive fluid seepage does not occur.
3. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 2, is characterized in that, described in treat that described cell body is separated into guide channel and etching tank by corrosion of silicon.
4. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 1, is characterized in that, described clear polycarbonate PC plastics are the slot grid structure of multiple donut composition.
5. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 1, it is characterized in that, described clear polycarbonate PC plastics are vertical pectination slot grid structure.
6. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 1, it is characterized in that, described clear polycarbonate PC plastics are horizontal type pectination slot grid structure.
7. light auxiliary porous silicon galvanic corrosion groove as claimed in claim 2 or claim 3, it is characterized in that, described light source comprises LED.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210110252.0A CN102618914B (en) | 2012-04-13 | 2012-04-13 | Photon-assisted porous silicon electrochemical etching tank |
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| CN102618914B true CN102618914B (en) | 2015-07-08 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103395740A (en) * | 2013-08-02 | 2013-11-20 | 合肥工业大学 | Method for selectively preparing porous silicon based on silicon on insulator |
| FR3011835B1 (en) | 2013-10-16 | 2015-12-25 | Commissariat Energie Atomique | METHOD FOR ELECTROCHEMICALLY PRODUCING AT LEAST ONE POROUS AREA OF A MICRO AND / OR NANOELECTRONIC STRUCTURE |
| CN104900849A (en) * | 2015-07-02 | 2015-09-09 | 中国科学院电子学研究所 | Method for forming porous structure on surface of three-dimensional column array |
| CN107245755B (en) * | 2017-04-21 | 2019-05-21 | 深圳技术大学 | Photo-assisted electrochemical etching device suitable for multi-sample synchronous experiment |
| CN111321454B (en) * | 2020-03-05 | 2021-07-06 | 河南理工大学 | Method for preparing luminous porous silicon in parallel arrangement |
| FR3125811A1 (en) * | 2021-07-28 | 2023-02-03 | Silimixt | ELECTROCHEMICAL TREATMENT DEVICE WITH A LIGHTING SYSTEM |
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| DE19803852C2 (en) * | 1998-01-31 | 2003-12-18 | Bosch Gmbh Robert | Process for the production of silicon wafers oxidized on both sides |
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