CN102618914A - Photon-assisted porous silicon electrochemical etching tank - Google Patents
Photon-assisted porous silicon electrochemical etching tank Download PDFInfo
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- CN102618914A CN102618914A CN2012101102520A CN201210110252A CN102618914A CN 102618914 A CN102618914 A CN 102618914A CN 2012101102520 A CN2012101102520 A CN 2012101102520A CN 201210110252 A CN201210110252 A CN 201210110252A CN 102618914 A CN102618914 A CN 102618914A
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Abstract
The invention provides a photon-assisted porous silicon electrochemical etching tank which comprises a tank body, a fixing support, electrodes and a photon-assisted mechanism. The fixing support, the electrodes and the photon-assisted mechanism are arranged in the tank body; the fixing support is used for fixing a silicon chip to be etched; the electrodes comprises a cathode and an anode, and the cathode and the anode are fixed on two sides of the fixing support respectively; and the photon-assisted mechanism is arranged between the fixing support and the cathode, used for providing illumination for the silicon chip to be etched, and light source of the photon-assisted mechanism is sealed in transparent polycarbonate (PC) plastic which has a grooved gate structure to facilitate flow of etching solution. During a double groove electrochemical etching process, the photon-assisted mechanism between the cathode and the silicon chip to be etched in the tank body is used for irradiating the silicon chip to be etched directly at close range, therefore holes with a certain concentration are formed in the silicon chip to be etched, and quality and efficiency of the double groove electrochemical etching process are guaranteed.
Description
Technical field
The present invention relates to the microelectronic mechanical apparatus technical field, particularly a kind of light is assisted porous silicon galvanic corrosion groove.
Background technology
Along with the continuous development of microelectromechanical systems (MEMS), porous silica material demonstrates extremely wide application prospect with its favorable mechanical performance and thermal property in MEMS.At first; Rete based on porous silica material can be prepared into very thick; Can in MEMS, substitute materials such as SiO2 as sacrifice layer; Make that need not dual surface lithography when adopting body micro mechanical technology processing micro structure gets final product the snap-out release microstructure, can well solve structural sheet and basal spacing simultaneously from too little problem in the surface micro technology; Secondly; Because porous silicon has the thermal conductivity (can be low to moderate 1W/mK) far below silicon substrate; Therefore in the quick sensor-based system of low-grade fever, adopt porous silicon can obtain temperature variation response fast and low thermal losses as thermal insulation layer; Also avoid simultaneously outstanding platform heat insulation structure that the quick system of traditional low-grade fever adopted because the shortcoming of the little and easy adhesion of sacrificial layer thickness, improved the stability and the safety of system greatly; The 3rd, utilize the characteristic that the Siliciumatom occurrence positions moves under the porous silicon high-temperature technology condition, can make the pressure chamber of novel MEMS pressure transmitter; The 4th, the porous silicon technology is compatible with standard integrated circuit silicon technology.Exactly because the various properties that have the said structure characteristics and show thus, its technical advantage in addition, porous silicon and technology thereof have obtained paying attention to widely and studying.
At present, what the employing of preparation porous silicon was the widest is electrochemical corrosive process, and electrochemical corrosive process mainly is divided into single groove and double flute electrochemical corrosive process.Wherein, single groove electrochemical corrosive process is mainly used in treats corrosion of silicon back side band metal level, utilizes and treats the corrosion of silicon back metal as electrode anode, treats the corrosion of silicon front and carries out galvanic corrosion.The double flute electrochemical corrosive process is used to treat that the corrosion of silicon back side is with the porous silicon corrosion of metal level.
Please refer to Fig. 1, it is the structural representation of existing porous silicon galvanic corrosion groove.As shown in Figure 1, porous silicon galvanic corrosion groove comprises: cell body 104; Be positioned at the anchor of said cell body 104, said anchor comprises first anchor 107 and is positioned at second anchor 106 of said first anchor below; Be positioned at the electrode of said cell body 104, said electrode comprises cathode electrode 101 and anode electrode 102, and said cathode electrode 101 and anode electrode 102 lay respectively at said anchor both sides, and said cathode electrode 101 and anode electrode 102 are processed by metal platinum.
Carry out etching process when forming porous silicon when utilizing this porous silicon galvanic corrosion groove to treat corrosion of silicon; In affiliated cell body 104, inject corrosive fluid 105; To treat that corrosion of silicon 103 places in the cell body 104, concrete, fix through first anchor 107 and second anchor 106.At this moment; Cell body 104 is treated that corrosion of silicon 103 is divided into two " half grooves "; Be respectively guide channel 109 and etching tank 108; Said guide channel 109 and etching tank 108 be only through treating that corrosion of silicon 103 realizes conducting, the double flute in other part mutually insulated, these two " half groove " double flute electrochemical corrosive process.After giving electrode application voltage; Because effect of electric field; Electric current flows to etching tank 108 through treating corrosion of silicon 103 from guide channel 109; Treat hole in the corrosion of silicon 103 will flow near cathode electrode 101 treat make the corrosion of silicon 103 of treating on this surface that galvanic corrosion take place in corrosion of silicon 103 surfaces; Another side does not then react, and finally just can form porous silicon.
The principle of this double flute electrochemical corrosive process is: double flute galvanic corrosion porous silicon technology is with treating that corrosion of silicon does anode; Under the situation of extra electric field effect; Electric current flows to etching tank through treating corrosion of silicon from electrochemical guide channel, treat hole in the corrosion of silicon will flow near cathode electrode treat the corrosion of silicon surface, thereby make this surface treat corrosion of silicon generation galvanic corrosion; Treat that as anodic the negatively charged ion (OH-and F-) in corrosion of silicon and the corrosive fluid carries out electrochemical reaction generation silicon-dioxide under the effect of treating corrosion of silicon holes (positive charge); This silicon-dioxide and then the liquid that can be corroded again react away, and when the control reaction conditions, make reaction process reach non-equilibrium sexual state; Will treat that the corrosion of silicon surface generates porous, finally forms porous silicon.
But realize that through this porous silicon galvanic corrosion groove there is following several problem in the double flute electrochemical corrosive process:
At first; Treat that the hole concentration in the corrosion of silicon is most important for the speed of double flute electrochemical corrosive process; But, treat in the existing technology that the hole concentration in the corrosion of silicon is difficult to control, thereby cause the quality of double flute electrochemical corrosive process and efficient to can not get guaranteeing;
Secondly; In corrosion process, the electrode of being processed by metal platinum is corroded easily, causes and treats to have on the corrosion of silicon heavy metal to stain; Thereby be unfavorable for and conventional IC semiconductor process compatible, influence the following process of silicon chip on semiconductor production line after porous silicon corrodes.
Summary of the invention
The object of the present invention is to provide a kind of light to assist porous silicon galvanic corrosion groove; Treat in the double flute electrochemical corrosive process with the solution prior art that the hole concentration in the corrosion of silicon is difficult to control, thereby cause the quality of double flute electrochemical corrosive process and the problem that efficient can not get guaranteeing.
For solving the problems of the technologies described above, the present invention provides a kind of light to assist porous silicon galvanic corrosion groove, comprising:
Cell body;
It is intravital in order to fixedly to treat the anchor of corrosion of silicon to be positioned at said groove;
Be positioned at the intravital electrode of said groove, said electrode comprises cathode electrode and anode electrode, and said cathode electrode and anode electrode lay respectively at said anchor both sides;
Also comprise: be positioned at the intravital smooth supplementary structure of said groove, said smooth supplementary structure is between said anchor and cathode electrode, in order to the said corrosion of silicon of treating illumination to be provided.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said electrode is a Graphite Electrodes.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, fixedly treat corrosion of silicon on the said anchor, and treat that seepage does not take place corrosion of silicon front and back corrosive fluid.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, the said corrosion of silicon of treating is separated into guide channel and etching tank with said cell body.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said smooth supplementary structure comprises: light source and clear polycarbonate PC plastics, said light source are sealed in the said clear polycarbonate PC plastics.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said clear polycarbonate PC plastics are slot grid structure, make corrosive fluid from an effluent of clear polycarbonate PC plastics to opposite side.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said clear polycarbonate PC plastics are the slot grid structure that a plurality of donuts are formed.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said clear polycarbonate PC plastics are vertical pectination slot grid structure.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said clear polycarbonate PC plastics are horizontal type pectination slot grid structure.
Optional, in the auxiliary porous silicon galvanic corrosion groove of described light, said light source comprises the LED lamp.
In the auxiliary porous silicon galvanic corrosion groove of light provided by the invention; When carrying out the double flute electrochemical corrosive process; Through in cell body and at electrode and, treating the light supplementary structure between the corrosion of silicon; Low coverage is liftoff, directly corrosion of silicon is treated in irradiation, thereby in treating corrosion of silicon, forms certain density hole effectively, and then guarantees the quality and the efficient of double flute electrochemical corrosive process.
Further, in the auxiliary porous silicon galvanic corrosion groove of light provided by the invention, the electrode that external electric field is provided is a Graphite Electrodes; The chemical property of graphite is stable; Avoided doing electrode,, helped and the semiconductor technology compatibility easily in the risk of treating to have on the corrosion of silicon heavy metal contamination with metal platinum.
Description of drawings
Fig. 1 is the structural representation of existing porous silicon galvanic corrosion groove;
Fig. 2 is the structural representation of the auxiliary porous silicon galvanic corrosion groove of light of the embodiment of the invention;
Fig. 3 is one of the structural representation of the light supplementary structure of the embodiment of the invention;
Fig. 4 be the embodiment of the invention the light supplementary structure structural representation two;
Fig. 5 be the embodiment of the invention the light supplementary structure structural representation three;
Fig. 6 is one of the structural representation of the electrode of the embodiment of the invention;
Fig. 7 be the embodiment of the invention electrode structural representation two.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the auxiliary porous silicon galvanic corrosion groove of light that the present invention proposes is done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Please refer to Fig. 2, it is the structural representation of the auxiliary porous silicon galvanic corrosion groove of light of the embodiment of the invention.As shown in Figure 2, the auxiliary porous silicon galvanic corrosion groove of said light comprises:
Be positioned at said cell body 204 in order to fixedly to treat the anchor of corrosion of silicon 203;
Be positioned at the electrode of said cell body 204, said electrode comprises cathode electrode 201 and anode electrode 202, and said cathode electrode 201 and anode electrode 202 lay respectively at said anchor both sides; And
Be positioned at the light supplementary structure 208 of said cell body 204, said smooth supplementary structure 208 is between said anchor and cathode electrode 201, in order to the said corrosion of silicon 203 of treating illumination to be provided.
Concrete; Said anchor comprises first anchor 207 and is positioned at second anchor 206 of said first anchor 207 belows; The said corrosion of silicon 203 of treating is fixed through said first anchor 207 and second anchor 206; At this moment, will make and treat that seepage does not take place corrosion of silicon 203 front and back corrosive fluids.The said corrosion of silicon 203 of treating is separated into guide channel 209 and etching tank 210 with said cell body 204, anchor with treat that corrosion of silicon need realize the mutual electrical isolation of both sides liquid, promptly so-called double flute, thus just can realize the double flute electrochemical corrosive process.
At this, said smooth supplementary structure 208 is at cathode electrode 201 and treat between the corrosion of silicon 203.That is, said smooth supplementary structure 208 and cathode electrode 201 are positioned at etching tank 210, and said anode electrode 202 is positioned at guide channel 209.
When carrying out the double flute electrochemical corrosive process, energized is also injected corrosive fluid 205 in said cell body 204, preferred, and said corrosive fluid 205 is that hydrofluoric acid solution or hydrofluoric acid add ethanolic soln, and its percentage concentration is 15%～25%.
At this; Through in cell body 204 and at cathode electrode 201 and treat the light supplementary structure 208 between the corrosion of silicon 203; Low coverage is liftoff, directly corrosion of silicon 203 is treated in irradiation; Thereby in treating corrosion of silicon 203, form certain density hole effectively, and then guarantee the quality and the efficient of double flute electrochemical corrosive process.
Wherein, Can excite the principle of treating the hole concentration in the corrosion of silicon 203 to be through this light supplementary structure 208: semiconductor light silicon materials (promptly treating corrosion of silicon) are when receiving rayed; Electronics on its valence band is excited to conduction band; Produce electron-hole pair, and then produced the hole concentration of reacting required, improved the etching condition that forms porous silicon and set up.
Further, said electrode is a Graphite Electrodes, because the chemical property of graphite is stable, has avoided doing electrode with metal platinum, easily in the risk of treating to have on the corrosion of silicon 203 the heavy metal contamination, helps and the semiconductor technology compatibility.
In the present embodiment, the distance between said smooth supplementary structure 208 and the said anchor (promptly and be fixed in treat corrosion of silicon 203 on the said anchor) is 20mm～200mm.In this distance range, can effectively control resulting hole concentration, and then improve quality and the efficient that forms porous silicon.
Please refer to Fig. 3, it is one of the structural representation of the light supplementary structure of the embodiment of the invention.As shown in Figure 3, concrete, said smooth supplementary structure 208 comprises: light source 401 and clear polycarbonate PC plastics 402, said light source 401 is sealed in the said clear polycarbonate PC plastics 402.At this, said clear polycarbonate PC plastics 402 are slot grid structure, make corrosive fluid 205 from an effluent of clear polycarbonate PC plastics 402 to opposite side.Concrete, said clear polycarbonate PC plastics 402 comprise a plurality of donuts, have gap 403 between adjacent two annulus.The quantity of said annulus is 3～6, and the gap between adjacent two annulus is 5mm～20mm.In the present embodiment, the diameter that is positioned at the annulus of outermost is 150mm～160mm, and the ring width of each annulus is 3mm～15mm.
Through clear polycarbonate PC plastics 402 being arranged to have the donut in gap 403; Both can guarantee to treat that corrosion of silicon 203 can receive uniform irradiation; Can make the corrosive fluid 205 that flows in the cell body 204 be easy to flow again, thereby improve the efficient that corrosion forms porous silicon.
In the present embodiment, said light source is the LED lamp, and the quantity of said LED lamp is 18～96.The voltage of said LED lamp is 12V～24V, and power is 6W～36W.Preferably, the quantity of said LED lamp is 18,27,36,45,54,63,72,81 or 96.A plurality of LED lamps are distributed in each annulus uniformly; Be that said light source is the groove palisade; Thereby treat that corrosion of silicon 203 shines uniformly; The hole that make to produce is uniformly distributed in treats in the corrosion of silicon 203, thereby makes and treat that the corrosion efficient at corrosion of silicon 203 every places is suitable, improves the quality of formed porous silicon.Certainly, in other embodiments of the invention, said light source also can be cold-cathode lamp, and the application does not limit this.
In other embodiments of the invention; Said clear polycarbonate PC plastics also can be vertical pectination slot grid structure (as shown in Figure 4); Perhaps horizontal type pectination slot grid structure (as shown in Figure 5); Promptly make corrosive fluid can be easily get final product to opposite side from an effluent of clear polycarbonate PC plastics, the application does not do qualification to this.
Please refer to Fig. 6, it is one of the structural representation of the electrode of the embodiment of the invention.As shown in Figure 6; Said electrode (being cathode electrode 201 and anode electrode 202) be shaped as the T font; T font electrode comprises upper beam and the bottom electroplax that is connected with this upper beam, and is corresponding, has draw-in groove (not shown among Fig. 2) on the sidewall of said cell body 204; Thus, said upper beam card and in said draw-in groove.At this, said bottom electroplax is a square, and the length of side is 200mm.Have a plurality of through holes 301 on the said electrode, special, said through hole 301 is positioned on the electroplax of said bottom, and the diameter D of said through hole 301 is 2mm～4mm, and between adjacent two through holes 301 is 2mm～4mm apart from d.Preferably, the quantity of said through hole 301 is 200～400, and these a plurality of through holes 301 are distributed on the said electrode uniformly.Thus, both can guarantee to treat that corrosion of silicon 203 can receive uniform electric field, and can make the corrosive fluid 205 that flows in the cell body 204 be easy to flow again, thereby improve the efficient that corrosion forms porous silicon.
In other embodiments of the invention; Said electrode also can be other shapes; For example: said electrode be shaped as the T font; T font electrode comprises upper beam and the bottom electroplax that is connected with this upper beam, and said bottom electroplax is a circle/ellipse (as shown in Figure 7) etc., and the application does not do qualification to this.
In the present embodiment; The thickness of said electrode is 5mm～10mm; The voltage that is loaded on the said electrode is 20V～100V, and the electric current that is loaded on the said electrode is galvanic current or the positive negative impulse current of 1A～5A, voltage/current peak value be 20～100V/ (pulse power of 1～5A).Wherein, the current density of direct supply is 12～80mA/cm
2, the forward current density of the pulse power is 2～10mA/cm
3, the time is 20～100ms, reverse current density is 0～1mA/cm
3, the time is 2～10ms.
Preferably, the distance between said anode electrode 202 and the said anchor (promptly and be fixed in treat corrosion of silicon 203 on the said anchor) is 10mm～30mm; Distance between said cathode electrode 201 and the said anchor (promptly and be fixed in treat corrosion of silicon 203 on the said anchor) is 50mm～200mm.
In the present embodiment, said cell body 204 be shaped as cuboid, length is 20cm～50cm, width is 20cm～30cm, the degree of depth is 20cm～40cm, promptly this porous silicon galvanic corrosion groove is fit to handle 6 cun the corrosion of silicon of treating.Certainly, the difference of handling as required of treating the corrosion of silicon size for example need be handled 8 cun the corrosion of silicon of treating, the size of said cell body 204 can correspondingly change.
Foregoing description only is the description to preferred embodiment of the present invention, is not any qualification to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (10)
1. a light is assisted porous silicon galvanic corrosion groove, comprising:
Cell body;
It is intravital in order to fixedly to treat the anchor of corrosion of silicon to be positioned at said groove;
Be positioned at the intravital electrode of said groove, said electrode comprises cathode electrode and anode electrode, and said cathode electrode and anode electrode lay respectively at said anchor both sides;
It is characterized in that, also comprise: be positioned at the intravital smooth supplementary structure of said groove, said smooth supplementary structure is between said anchor and cathode electrode, in order to the said corrosion of silicon of treating illumination to be provided.
2. light as claimed in claim 1 is assisted porous silicon galvanic corrosion groove, it is characterized in that said electrode is a Graphite Electrodes.
3. light as claimed in claim 1 is assisted porous silicon galvanic corrosion groove, it is characterized in that, fixedly treats corrosion of silicon on the said anchor, and treats that seepage does not take place corrosion of silicon front and back corrosive fluid.
4. light as claimed in claim 3 is assisted porous silicon galvanic corrosion groove, it is characterized in that, the said corrosion of silicon of treating is separated into guide channel and etching tank with said cell body.
5. like claim 3 or the auxiliary porous silicon galvanic corrosion groove of 4 described light, it is characterized in that said smooth supplementary structure comprises: light source and clear polycarbonate PC plastics, said light source are sealed in the said clear polycarbonate PC plastics.
6. light as claimed in claim 5 is assisted porous silicon galvanic corrosion groove, it is characterized in that, said clear polycarbonate PC plastics are slot grid structure, make corrosive fluid from an effluent of clear polycarbonate PC plastics to opposite side.
7. light as claimed in claim 6 is assisted porous silicon galvanic corrosion groove, it is characterized in that, said clear polycarbonate PC plastics are the slot grid structure that a plurality of donuts are formed.
8. light as claimed in claim 6 is assisted porous silicon galvanic corrosion groove, it is characterized in that, said clear polycarbonate PC plastics are vertical pectination slot grid structure.
9. light as claimed in claim 6 is assisted porous silicon galvanic corrosion groove, it is characterized in that, said clear polycarbonate PC plastics are horizontal type pectination slot grid structure.
10. light as claimed in claim 5 is assisted porous silicon galvanic corrosion groove, it is characterized in that said light source comprises the LED lamp.
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| CN103395740A (en) * | 2013-08-02 | 2013-11-20 | 合肥工业大学 | Method for selectively preparing porous silicon based on silicon on insulator |
| CN104555897A (en) * | 2013-10-16 | 2015-04-29 | 原子能和替代能源委员会 | Method for electrochemically producing at least one porous region of a micro- and/or nanoelectronic structure |
| CN104900849A (en) * | 2015-07-02 | 2015-09-09 | 中国科学院电子学研究所 | Method for forming porous structure on surface of three-dimensional column array |
| CN107245755A (en) * | 2017-04-21 | 2017-10-13 | 深圳大学 | The light assisted electrochemical etching device synchronously tested suitable for Multi-example |
| CN111321454A (en) * | 2020-03-05 | 2020-06-23 | 河南理工大学 | Method for preparing luminous porous silicon in parallel arrangement |
| FR3125811A1 (en) * | 2021-07-28 | 2023-02-03 | Silimixt | ELECTROCHEMICAL TREATMENT DEVICE WITH A LIGHTING SYSTEM |
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