CN102611428A - Selection circuit for power voltage - Google Patents
Selection circuit for power voltage Download PDFInfo
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- CN102611428A CN102611428A CN201110024967XA CN201110024967A CN102611428A CN 102611428 A CN102611428 A CN 102611428A CN 201110024967X A CN201110024967X A CN 201110024967XA CN 201110024967 A CN201110024967 A CN 201110024967A CN 102611428 A CN102611428 A CN 102611428A
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- voltage
- pmos pipe
- power supply
- contact
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Abstract
The invention discloses a selection circuit for a power voltage. The selection circuit comprises a contact power supply, a non-contact power supply and a substrate voltage generating circuit connecting the contact power supply with the non-contact power supply, wherein a substrate voltage which is generated by using a higher voltage in the non-contact power supply and the contact power supply is taken as the substrate voltage of all PMOS (P-channel Metal Oxide Semiconductor) tubes in a power voltage comparison circuit; the power voltage comparison circuit comprises a comparator, a first PMOS tube and a second PMOS tube; substrate ends of the first PMOS tube and the second PMOS tube are connected with the substrate voltage outputted by the substrate voltage generating circuit; and drains of the PMOS tubes are connected together, as the output of the power voltage comparison circuit. According to the selection circuit for the power voltage, the non-contact power supply is directly compared with the contact power supply, the higher voltage of the two power supplies is selected, one power voltage is outputted and only one comparator structure is adopted, so that the power consumption and the cost of area are saved and the working reliability is improved.
Description
Technical field
The present invention relates to a kind of analog circuit, especially a kind of supply voltage is selected circuit.
Background technology
Continuous maturation along with the double-interface card technology; Open the characteristic that card can carry out two kinds of operations of contact interface and noncontact interface simultaneously with one of which; Double-interface card has been put in the middle of the large-scale commercial application of more areas gradually; Be mainly field of traffic, but progressively expanded to multi-field application such as finance, ecommerce, communication.
The problem of a difficulty is how reliable system clock of cpu system and power supply are provided in double-interface card.Because two interfaces all can produce clock and power supply,, and do not produce conflict so system needs correctly switching each other.
Two interfaces electric power management circuit should have only contact power supply, have only non-contact power, existing contact power supply has again under these three kinds of situation of non-contact power and can both correctly provide inner needed voltage VDD and load current.And can not influence the communication of double-interface card when between different working modes, switching, between contact power supply and the non-contact electric power feed-through circuits can not be arranged.The supply voltage that has common electric power management circuit now selects circuit non-contact electric power AVDDRF and contact power supply AVDDVCC directly not to be compared; But through comparing with VDD more respectively; Indirect again selection AVDDRF or AVDDVCC have used the structure of two comparators.The sort circuit complex structure, power consumption is high, and reliability is low.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of supply voltage to select circuit, is applied in the existing double-interface card electric power management circuit, can realize reducing power consumption and area overhead, and improves the module functional reliability.
For solving the problems of the technologies described above, it is to comprise that supply voltage of the present invention is selected the technical scheme of circuit:
Contact power supply and non-contact electric power; And
Underlayer voltage produces circuit, connects said contact power supply and non-contact electric power, adopts underlayer voltage of higher voltage generation in said non-contact electric power and the contact power supply, as the underlayer voltage of all PMOS pipes in the supply voltage comparison circuit;
The supply voltage comparison circuit; Comprise a comparator, PMOS pipe and the 2nd PMOS pipe; Said non-contact electric power and contact power supply are connected respectively to the normal phase input end and the inverting input of comparator; And the source electrode of PMOS pipe and the 2nd a PMOS pipe, the reversed-phase output of said comparator and positive output end are connected respectively to the grid of said PMOS pipe and the 2nd PMOS pipe, and the substrate terminal that said PMOS pipe and said the 2nd PMOS manage is connected the underlayer voltage that said underlayer voltage generation circuit is exported; The drain electrode of said PMOS pipe and said the 2nd PMOS pipe links together, as the output of said supply voltage comparison circuit.
Supply voltage of the present invention is selected circuit, adopts directly relatively non-contact electric power and contact power supply, selects higher voltage among both; Export a supply voltage; Only adopt the structure of a comparator, practiced thrift the expense of power consumption and area, improved functional reliability.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is carried out further detailed description.
Fig. 1 is for using the structural representation of double-interface card electric power management circuit of the present invention.
Fig. 2 selects the structural representation of supply voltage comparison circuit in the circuit for supply voltage of the present invention.
Fig. 3 selects the structural representation of underlayer voltage generation circuit in the circuit for supply voltage of the present invention.
Embodiment
Shown in Figure 1 for using the structural representation of double-interface card electric power management circuit of the present invention.It is that power management kernel (CORE) circuit provides supply voltage that supply voltage of the present invention is selected the resultant voltage AVDD_PMU of circuit, and power management kernel (CORE) circuit produces inner required burning voltage VDD.VDD selects the output AVDD_PMU of circuit less than supply voltage.The substrate of all PMOS pipes all is connected with AVDD_PMU in power management kernel (CORE) circuit.
The invention discloses a kind of supply voltage and select circuit, comprising:
Contact power supply AVDDVCC and non-contact electric power AVDDRF; And
Underlayer voltage produces circuit, connects said contact power supply and non-contact electric power, adopts underlayer voltage of higher voltage generation in said non-contact electric power and the contact power supply, as the underlayer voltage of all PMOS pipes in the supply voltage comparison circuit;
The supply voltage comparison circuit; As shown in Figure 2; Comprise a comparator, PMOS pipe PM1 and the 2nd PMOS pipe PM2; Said non-contact electric power AVDDRF and contact power supply AVDDVCC are connected respectively to the normal phase input end and the inverting input of comparator; And the source electrode of PMOS pipe PM1 and the 2nd a PMOS pipe PM2, the reversed-phase output of said comparator and positive output end are connected respectively to the grid of said PMOS pipe PM1 and the 2nd PMOS pipe PM2, and the substrate terminal of said PMOS pipe PM1 and said the 2nd PMOS pipe PM2 is connected said underlayer voltage and produces the underlayer voltage AVDD that circuit is exported; The drain electrode of said PMOS pipe PM1 and said the 2nd PMOS pipe PM2 links together, as the output AVDD_PMU of said supply voltage comparison circuit.
As shown in Figure 3; Said underlayer voltage produces circuit and comprises the 3rd PMOS pipe PM3 and the 4th PMOS pipe PM4; Said contact power supply AVDDVCC is connected the source electrode that said the 3rd PMOS manages PM3 and the 4th PMOS pipe PM4 respectively with non-contact electric power AVDDRF; And the grid of said the 4th PMOS pipe PM4 and the 3rd PMOS pipe PM3, the substrate terminal of said the 3rd PMOS pipe PM3 and the 4th PMOS pipe PM4 all links together with drain electrode, as the output terminals A VDD of said underlayer voltage.
Said underlayer voltage produces circuit and utilizes magnitude of voltage AVDD of higher voltage generation among non-contact electric power AVDDRF and the contact power supply AVDDVCC, as the underlayer voltage of all PMOS pipes in the supply voltage comparison circuit.Because AVDD is the peak among AVDDVRF and the AVDDVCC all the time, thus the source of PMOS pipe, leak two ends voltage all smaller or equal to AVDD, can be to substrate leakage.
Concrete operation principle of the present invention according to the working method of double-interface card, is below discussed the operation principle under three kinds of situation.
(1) the existing contact power supply of double-interface card has non-contact electric power again:
When non-contact power supply voltage AVDDRF greater than contact supply voltage AVDDVCC and difference threshold voltage
greater than PMOS; Substrate is as shown in Figure 3 selected PM4 conducting in the circuit; PM3 turn-offs; The substrate of PM3 and PM4, drain terminal voltage AVDD follow AVDDRF and change; And make the conducting resistance
of PM4 very little
AVDD≈AVDDRF>AVDDVCC (1)
When non-contact power supply voltage AVDDRF less than contact supply voltage AVDDVCC and difference threshold voltage
greater than PMOS; Substrate is as shown in Figure 3 selected PM3 conducting in the circuit; PM4 turn-offs; The substrate of PM3 and PM4, drain terminal voltage AVDD follow AVDDVCC and change; And make the conducting resistance
of PM3 very little
AVDD≈AVDDVCC>AVDDRF (2)
When non-contact power supply voltage AVDDRF and contact supply voltage AVDDVCC are more or less the same and difference less than the threshold voltage
of PMOS, substrate then as shown in Figure 3 is selected substrate, the drain terminal voltage of PM3 and PM4 in the circuit
AVDD=max(AVDDRF，AVDDVCC)-
(3)
When non-contact power supply voltage AVDDRF greater than contact supply voltage AVDDVCC, core voltage as shown in Figure 2 is selected in the circuit, AVDDRF is greater than AVDDVCC; Making the comparator inverse output terminal is low level; The forward output is a high level, makes the PM1 conducting like this, and PM2 turn-offs.Make the conducting resistance
of PM1 very little, so
AVDD_PMU≈AVDDRF>AVDDVCC (4)
And PM1, the substrate of PM2 is connected on the AVDD, and AVDD_PMU can not pour in down a chimney to substrate, and PM2 turn-offs, and AVDD_PMU can not pour in down a chimney to AVDDVCC.
When non-contact power supply voltage AVDDRF less than contact supply voltage AVDDVCC, core voltage as shown in Figure 2 is selected in the circuit, AVDDVCC is greater than AVDDRF; Making the comparator inverse output terminal is high level; The forward output is a low level, makes the PM2 conducting like this, and PM1 turn-offs.Make the conducting resistance of PM2 very little, so
AVDD_PMU≈AVDDVCC>AVDDRF (5)
And PM1, the substrate of PM2 is connected on the AVDD, and AVDD_PMU can not pour in down a chimney to substrate, and PM1 turn-offs, and AVDD_PMU can not pour in down a chimney to AVDDRF.
According to above principle, all the other two kinds of situation obtain respectively:
(2) when having only non-contact electric power, AVDD_PMU ≈ AVDDRF;
(3) when having only the contact power supply, AVDD_PMU ≈ AVDDVCC.
The supply voltage that has common electric power management circuit now selects circuit non-contact electric power AVDDRF and contact power supply AVDDVCC directly not to be compared, indirect comparison AVDDRF or AVDDVCC, the structure of two comparators of needs.Supply voltage of the present invention is selected circuit; Adopt and directly compare non-contact electric power AVDDRF and contact power supply AVDDVCC; Select higher voltage among both, power supply AVDD_PMU is provided for power management CORE circuit, only need a comparator configuration; Practice thrift the expense of power consumption and area, improve functional reliability.
Claims (2)
1. a supply voltage is selected circuit, it is characterized in that, comprising:
Contact power supply and non-contact electric power; And
Underlayer voltage produces circuit, connects said contact power supply and non-contact electric power, adopts underlayer voltage of higher voltage generation in said non-contact electric power and the contact power supply, as the underlayer voltage of all PMOS pipes in the supply voltage comparison circuit;
The supply voltage comparison circuit; Comprise a comparator, PMOS pipe and the 2nd PMOS pipe; Said non-contact electric power and contact power supply are connected respectively to the normal phase input end and the inverting input of comparator; And the source electrode of PMOS pipe and the 2nd a PMOS pipe, the reversed-phase output of said comparator and positive output end are connected respectively to the grid of said PMOS pipe and the 2nd PMOS pipe, and the substrate terminal that said PMOS pipe and said the 2nd PMOS manage is connected the underlayer voltage that said underlayer voltage generation circuit is exported; The drain electrode of said PMOS pipe and said the 2nd PMOS pipe links together, as the output of said supply voltage comparison circuit.
2. supply voltage according to claim 1 is selected circuit; It is characterized in that; Said underlayer voltage produces circuit and comprises the 3rd PMOS pipe and the 4th PMOS pipe, and said contact power supply is connected the source electrode that said the 3rd PMOS manages and the 4th PMOS manages respectively with non-contact electric power, and the grid of said the 4th PMOS pipe and the 3rd PMOS pipe; The substrate terminal of said the 3rd PMOS pipe and the 4th PMOS pipe all links together with drain electrode, as the output of said underlayer voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110024967.XA CN102611428B (en) | 2011-01-24 | 2011-01-24 | Selection circuit for power voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110024967.XA CN102611428B (en) | 2011-01-24 | 2011-01-24 | Selection circuit for power voltage |
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| CN102611428A true CN102611428A (en) | 2012-07-25 |
| CN102611428B CN102611428B (en) | 2016-07-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110024967.XA Active CN102611428B (en) | 2011-01-24 | 2011-01-24 | Selection circuit for power voltage |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104133515A (en) * | 2014-07-09 | 2014-11-05 | 刘银 | PMOS transistor substrate selection circuit |
| CN104993574A (en) * | 2015-07-06 | 2015-10-21 | 上海巨微集成电路有限公司 | Power switching circuit applicable to OTP memories |
| CN107395170A (en) * | 2017-08-18 | 2017-11-24 | 无锡力芯微电子股份有限公司 | Power selection circuit |
| CN110119179A (en) * | 2019-05-08 | 2019-08-13 | 思瑞浦微电子科技（苏州）股份有限公司 | Floating high pressure selection circuit applied to more high-voltage power supplies |
| US10452113B2 (en) | 2017-11-20 | 2019-10-22 | Hong Kong Applied Science and Technology Research Institute Company Limited | Power supply switch with programmable switching decision |
| CN111193506A (en) * | 2018-11-14 | 2020-05-22 | 珠海格力电器股份有限公司 | Low-power consumption PMOS pipe substrate switching circuit with voltage isolation |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104133515A (en) * | 2014-07-09 | 2014-11-05 | 刘银 | PMOS transistor substrate selection circuit |
| CN104133515B (en) * | 2014-07-09 | 2016-06-15 | 山东汉旗科技有限公司 | PMOS substrate selection circuit |
| CN104993574A (en) * | 2015-07-06 | 2015-10-21 | 上海巨微集成电路有限公司 | Power switching circuit applicable to OTP memories |
| CN104993574B (en) * | 2015-07-06 | 2017-06-06 | 上海巨微集成电路有限公司 | A kind of power supply switch circuit suitable for otp memory |
| CN107395170A (en) * | 2017-08-18 | 2017-11-24 | 无锡力芯微电子股份有限公司 | Power selection circuit |
| US10452113B2 (en) | 2017-11-20 | 2019-10-22 | Hong Kong Applied Science and Technology Research Institute Company Limited | Power supply switch with programmable switching decision |
| CN111193506A (en) * | 2018-11-14 | 2020-05-22 | 珠海格力电器股份有限公司 | Low-power consumption PMOS pipe substrate switching circuit with voltage isolation |
| CN111193506B (en) * | 2018-11-14 | 2021-08-31 | 珠海格力电器股份有限公司 | Low-power consumption PMOS pipe substrate switching circuit with voltage isolation |
| CN110119179A (en) * | 2019-05-08 | 2019-08-13 | 思瑞浦微电子科技（苏州）股份有限公司 | Floating high pressure selection circuit applied to more high-voltage power supplies |
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|---|---|
| CN102611428B (en) | 2016-07-27 |
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